TWI647865B - Processing method of package substrate - Google Patents
Processing method of package substrate Download PDFInfo
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- TWI647865B TWI647865B TW104120322A TW104120322A TWI647865B TW I647865 B TWI647865 B TW I647865B TW 104120322 A TW104120322 A TW 104120322A TW 104120322 A TW104120322 A TW 104120322A TW I647865 B TWI647865 B TW I647865B
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- package substrate
- water
- suction
- wafer
- cutting
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- 239000000758 substrate Substances 0.000 title claims abstract description 157
- 238000003672 processing method Methods 0.000 title claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 110
- 238000005520 cutting process Methods 0.000 claims abstract description 91
- 235000012431 wafers Nutrition 0.000 claims abstract description 85
- 238000011084 recovery Methods 0.000 claims abstract description 14
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000007921 spray Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 11
- 238000007664 blowing Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000008400 supply water Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Led Device Packages (AREA)
Abstract
本發明的課題是使封裝基板在已矯正的狀態下吸引保持在工作夾台上，並且使封裝基板之分割後的晶片容易從工作夾台分離。解決手段是將封裝基板之加工方法做成具有以下步驟之構成：在以切削水噴嘴將工作夾台之吸引面與封裝基板之間以切削水充滿後，以吸引面吸引保持封裝基板之步驟；以切削刀將封裝基板沿著分割預定線切削而分割成一個個晶片的步驟；以切削水噴嘴將切削水供給到晶片而以切削水密封工作夾台之吸引面的步驟；以及從工作夾台之吸引面噴射吹送空氣，而使晶片從吸引面分離以回收的步驟。 An object of the present invention is to make a package substrate be sucked and held on a work chuck in a corrected state, and to easily separate a divided wafer of the package substrate from the work chuck. The solution is to make the processing method of the packaging substrate into a structure having the following steps: after filling the cutting surface with the cutting water nozzle and filling the packaging substrate with cutting water, the suction surface attracts and holds the packaging substrate; A step of cutting the package substrate along a predetermined dividing line with a cutter to divide the wafer into individual wafers; a step of supplying cutting water to the wafer with a cutting water nozzle and sealing the suction surface of the work clamp table with the cutting water; and The suction surface sprays air, and the wafer is separated from the suction surface for recovery.
Description
本發明是有關於車用LED的封裝基板之加工方法。 The present invention relates to a method for processing a package substrate for a vehicle LED.
已知車用LED之封裝基板的情況，是在成為發光面之封裝基板的表面上形成有樹脂製的透鏡以覆蓋晶片(參照例如專利文獻1)。又，作為封裝基板之底座基板，已知有在底座基板的表面形成樹脂層之基板(參照例如專利文獻2)。又，作為形成有透鏡之封裝基板的分割方法，已知有使封裝基板之透鏡側收容於治具的收容部，並從封裝基板的背面側切削以分割成一個個晶片的方法(參照例如專利文獻3)。 In the case of a package substrate for a vehicle LED, it is known that a lens made of resin is formed on the surface of the package substrate as a light emitting surface to cover the wafer (see, for example, Patent Document 1). Further, as a base substrate of a package substrate, a substrate in which a resin layer is formed on a surface of the base substrate is known (see, for example, Patent Document 2). In addition, as a method of dividing a package substrate on which a lens is formed, a method is known in which the lens side of the package substrate is housed in a housing portion of a jig, and is cut from the rear surface side of the package substrate to be divided into individual wafers (see, for example, a patent) Reference 3).
專利文獻1：日本專利特開2014-103354號公報 Patent Document 1: Japanese Patent Laid-Open No. 2014-103354
專利文獻2：日本專利特開2013-175511號公報 Patent Document 2: Japanese Patent Laid-Open No. 2013-175511
專利文獻3：日本專利特開2012-174701號公報 Patent Document 3: Japanese Patent Laid-Open No. 2012-174701
在上述封裝基板上是利用金屬板而形成有配線圖案，會有因金屬板與樹脂的熱膨脹係數不同而產生翹曲的問題。又，在以往之封裝基板用的工作夾台上，是配合封裝基板之分割後的晶片而形成有複數個吸引孔，且藉由將一個個吸引孔設成負壓來吸引保持有翹曲的封裝基板。但是，在這種封裝基板用的工作夾台上，在已將封裝基板的翹曲矯正成平整的狀態下，要吸引保持封裝基板是有困難的。 A wiring pattern is formed on the package substrate using a metal plate, and there is a problem that warpage occurs due to a difference in thermal expansion coefficient between the metal plate and the resin. In addition, in the conventional work substrate for package substrates, a plurality of suction holes are formed in accordance with the divided wafers of the package substrate, and the suction holes are attracted and held by setting the suction holes to a negative pressure. Package substrate. However, it is difficult to attract and hold the package substrate on the work clamp for the package substrate in a state where the warpage of the package substrate has been corrected to be flat.
此外，封裝基板用的工作夾台，由於一個個吸引孔在工作台內部是連通的，所以有在一部分的吸引孔中產生之洩漏會影響到其他吸引孔的可能性。亦即，雖然分割後的晶片，是藉由從工作夾台之各吸引孔噴射出的吹送空氣(blow air)而被分離，但是如果只有一部分的晶片先從一部分的吸引孔分離時，就會使吹送空氣從該一部分的吸引孔洩漏出。藉此，由於其他吸引孔之吹送空氣壓力降低，所以會有被其他吸引孔所保持之晶片變得難以從工作夾台分離的問題。 In addition, since the work clamps for the package substrate are connected one by one through the suction holes, there is a possibility that a leak generated in a part of the suction holes may affect other suction holes. That is, although the divided wafers are separated by blow air ejected from the suction holes of the work table, if only a part of the wafers are separated from a part of the suction holes first, they will be separated. The blown air is leaked from the suction hole of this part. As a result, since the pressure of the blowing air of the other suction holes is reduced, there is a problem that it becomes difficult to separate the wafer held by the other suction holes from the work table.
本發明是有鑒於此問題點而作成的發明，其目的在於提供一種封裝基板之加工方法，其可使封裝基板在已矯正的狀態下吸引保持於工作夾台上，並且使封裝基板之分割後的晶片容易從工作夾台分離。 The present invention has been made in view of this problem, and an object thereof is to provide a method for processing a package substrate, which can attract and hold the package substrate on a work clamp in a corrected state, and after the package substrate is divided, The wafer is easily separated from the work clamp.
本發明的封裝基板之加工方法，是以加工裝置之切削刀將表面有凸部且將該凸部以分割預定線劃分之封裝基板沿著該分割預定線切削以生成晶片的封裝基板之加工方法，該加工裝置包含有具有吸引保持該封裝基板之吸引面的工作夾台，和供水以覆蓋於至少該封裝基板的上表面的供水機構，該工作夾台包含有將凸部收容至該吸引面的凹部、對應於該分割預定線而供該切削刀進入之進入溝，及可在以該進入溝所劃分出之區域中吸引保持晶片的複數個吸引孔，該封裝基板之加工方法是由以下步驟所形成：保持步驟，以該供水機構使該水供給至該工作夾台之該吸引面，並在將該水充滿於該封裝基板的表面與該吸引面之間後，使該吸引孔與該吸引源連通而使其吸引該水，並在吸引該水時使該凸部收容於該凹部且以該吸引面吸引保持該封裝基板的表面；分割步驟，從已在該保持步驟中被吸引保持之該封裝基板的背面使該切削刀切入並沿著該分割預定線切削進給來進行切削而分割成該晶片；水充填步驟，以該供水機構將該水供給至已在該分割步驟中被分割之該晶片上，且至少將相鄰之該晶片間以該水充滿；以及晶片回收步驟，在已於該水充填步驟中至少將相鄰之該晶片間以該水充滿的狀態下，將該工作夾台之吸引切換成噴射，使其從該吸引面噴射流體並使該晶片從該吸引面分離而回收該晶片。 The package substrate processing method of the present invention is a package substrate processing method for cutting a package substrate having a convex portion on a surface thereof by a cutter of a processing device and dividing the convex portion by a predetermined division line along the predetermined division line to generate a wafer. The processing device includes a work clamp having a suction surface for attracting and holding the package substrate, and a water supply mechanism for supplying water to cover at least the upper surface of the package substrate, and the work clamp includes a convex portion accommodated on the suction surface. The recessed portion corresponding to the predetermined dividing line and the entry groove for the cutter to enter, and a plurality of suction holes that can attract and hold the wafer in the area divided by the entry groove. The processing method of the package substrate is as follows Step formation: a holding step of supplying the water to the suction surface of the work clamp with the water supply mechanism, and after the water is filled between the surface of the packaging substrate and the suction surface, the suction hole and The suction source communicates to attract the water, and when the water is attracted, the convex portion is received in the concave portion and the surface of the package substrate is attracted and held by the suction surface; From the back surface of the package substrate that has been attracted and held in the holding step, the cutter is cut in and cut along the predetermined dividing line to perform cutting to divide the wafer; the water filling step uses the water supply mechanism to The water is supplied to the wafer that has been divided in the dividing step, and at least the adjacent wafers are filled with the water; and the wafer recovery step is that at least the adjacent ones are already filled in the water filling step. In the state where wafers are filled with the water, the suction of the work clamp is switched to spray, the fluid is ejected from the suction surface, and the wafer is separated from the suction surface to recover the wafer.
依據此構成，是在已將封裝基板的表面之凸部收容在工作夾台的吸引面之凹部的狀態下，以水充滿封裝基板的表面與工作夾台的吸引面之間。然後，藉由將水吸引到複數個吸引孔中，並且使封裝基板被吸引面之複數個吸引孔吸引，而藉由封裝基板將工作夾台上的水擠壓到外側。因此，不會有空氣進入封裝基板的表面與工作夾台的吸引面之間的情形，且可在翹曲已被矯正的狀態下將封裝基板吸引保持於工作夾台上。又，在使封裝基板之分割後的晶片從工作夾台上分離之時，是使至少相鄰的晶片間被水充滿，而使工作夾台之吸引面藉由水而被密封。由於可用水的密封抑制吸引孔之空氣的洩漏，所以即使一部分的晶片先從吸引面分離，空氣吹送(air blow)壓力也不會大幅降低。據此，可以使晶片容易藉由空氣吹送而從工作夾台之吸引面分離。 According to this configuration, in a state where the convex portion of the surface of the package substrate is housed in the concave portion of the suction surface of the work clamp table, water is filled between the surface of the package substrate and the suction surface of the work clamp table. Then, the water is drawn into the plurality of suction holes, and the package substrate is attracted by the plurality of suction holes on the suction surface, and the water on the work clamp is squeezed to the outside by the package substrate. Therefore, air does not enter between the surface of the package substrate and the suction surface of the work clamp, and the package substrate can be attracted and held on the work clamp in a state where warpage has been corrected. When separating the divided wafer of the package substrate from the work clamp, at least the adjacent wafers are filled with water, and the suction surface of the work clamp is sealed with water. Since the leakage of the air in the suction hole can be suppressed by sealing with water, even if a part of the wafer is separated from the suction surface first, the air blow pressure will not be greatly reduced. Accordingly, the wafer can be easily separated from the suction surface of the work clamp by air blowing.
又，在上述封裝基板之加工方法中，該封裝基板具備圍繞該凸部而形成之剩餘區域，該工作夾台之該吸引孔是配置成可進行該剩餘區域之吸引，以在該保持步驟與該水充填步驟之間實施剩餘區域去除步驟而構成，該剩餘區域去除步驟是以該切削刀切削該凸部與該剩餘區域之分界，並使其以該凹部吸引保持該凸部而使該剩餘區域從該工作夾台分離。 Furthermore, in the method for processing a package substrate, the package substrate has a remaining area formed around the convex portion, and the suction hole of the work clamp is configured to perform suction of the remaining area so that the holding step and the The remaining region removing step is implemented by the water filling step. The remaining region removing step is to cut the boundary between the convex portion and the remaining area by the cutter, and to attract and hold the convex portion with the concave portion to make the remaining portion. The area is separated from the work clamp.
又，在上述封裝基板之加工方法中，該封裝基板在背面側配置有金屬板，該保持步驟是吸引保持該封裝基板的表面以用切削刀從該封裝基板的背面側切入。 Moreover, in the above-mentioned processing method of the package substrate, the package substrate is provided with a metal plate on the back side, and the holding step is to attract and hold the surface of the package substrate to be cut in from the back side of the package substrate with a cutter.
依據本發明，藉由在吸引保持封裝基板時，將封裝基板的表面與工作夾台的吸引面之間以水充滿，可以使封裝基板在已矯正的狀態下吸引保持於工作夾台上。又，藉由在使封裝基板之分割後的晶片從工作夾台分離之時，至少將相鄰的晶片間以水充滿，可以使封裝基板之分割後的晶片容易從工作夾台分離。 According to the present invention, when the package substrate is attracted and held, the surface of the package substrate and the suction surface of the work clamp are filled with water, so that the package substrate can be attracted and held on the work clamp in a corrected state. In addition, when the divided wafer of the package substrate is separated from the work chuck, at least the adjacent wafers are filled with water, so that the divided wafer of the package substrate can be easily separated from the work chuck.
1‧‧‧加工裝置 1‧‧‧Processing Equipment
11‧‧‧基台 11‧‧‧ abutment
12‧‧‧工作夾台 12‧‧‧Work clamp
13‧‧‧切削進給機構 13‧‧‧ cutting feed mechanism
14‧‧‧切削機構 14‧‧‧ cutting mechanism
15‧‧‧分度進給機構 15‧‧‧ index feed mechanism
16‧‧‧切入進給機構 16‧‧‧cut into the feed mechanism
17‧‧‧攝像機構 17‧‧‧ Camera
21‧‧‧立壁部 21‧‧‧ standing wall
23‧‧‧吸引源 23‧‧‧ Attraction source
24‧‧‧空氣源 24‧‧‧Air source
25、26、27‧‧‧閥 25, 26, 27‧‧‧ valve
31、51、61‧‧‧導軌 31, 51, 61‧‧‧ rail
32‧‧‧X軸基台 32‧‧‧X-axis abutment
33、53‧‧‧滾珠螺桿 33、53‧‧‧ball screw
34、54、64‧‧‧驅動馬達 34,54,64‧‧‧Drive motor
35‧‧‧θ基台 35‧‧‧θ abutment
41‧‧‧吸引面 41‧‧‧ Attraction
42‧‧‧凹部 42‧‧‧ Recess
43‧‧‧支撐面 43‧‧‧ support surface
44‧‧‧進入溝 44‧‧‧ enter the trench
45、46‧‧‧吸引孔(貫通孔) 45, 46‧‧‧ Suction holes (through holes)
52‧‧‧Y軸基台 52‧‧‧Y-axis abutment
62‧‧‧Z軸基台 62‧‧‧Z-axis abutment
71‧‧‧切削刀 71‧‧‧Cutter
72‧‧‧主軸 72‧‧‧ Spindle
73‧‧‧刀片蓋 73‧‧‧Blade cover
74‧‧‧切削水噴嘴(供水機構) 74‧‧‧ cutting water nozzle (water supply agency)
81‧‧‧分割預定線 81‧‧‧ divided scheduled line
82‧‧‧凸部 82‧‧‧ convex
83‧‧‧金屬板 83‧‧‧ metal plate
89‧‧‧毛邊 89‧‧‧ burr
A1‧‧‧元件區域 A1‧‧‧component area
A2‧‧‧剩餘區域 A2‧‧‧Remaining area
C‧‧‧晶片 C‧‧‧Chip
W‧‧‧封裝基板 W‧‧‧ package substrate
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧ directions
圖1為本實施形態之加工裝置的立體圖。 FIG. 1 is a perspective view of a processing apparatus according to this embodiment.
圖2A~2C為比較例的封裝基板之加工方法的說明圖。 2A to 2C are explanatory diagrams of a processing method of a package substrate of a comparative example.
圖3A~3C為本實施形態之保持步驟的說明圖。 3A to 3C are explanatory diagrams of the holding steps in this embodiment.
圖4A~4B為本實施形態之分割步驟的說明圖。 4A to 4B are explanatory diagrams of division steps in this embodiment.
圖5為本實施形態之剩餘區域去除步驟的說明圖。 FIG. 5 is an explanatory diagram of a remaining area removing step according to this embodiment.
圖6為本實施形態之水充填步驟的說明圖。 FIG. 6 is an explanatory diagram of a water filling step according to this embodiment.
圖7A~7B為本實施形態之晶片回收步驟的說明圖。 7A to 7B are explanatory diagrams of a wafer recovery step in this embodiment.
以下，參照附加圖式，就適用於本實施形態的封裝基板之加工方法的加工裝置加以說明。圖1為本實施形態之加工裝置立體圖。圖2為比較例之封裝基板的加工方法的說明圖。再者，本實施形態之加工裝置，不限定於圖1所示之構成。本實施形態之封裝基板的加工方法，只要是可分割封裝基板之加工裝置，則在任何種類的加工裝置中均能適用。 Hereinafter, a processing apparatus suitable for a method of processing a package substrate according to this embodiment will be described with reference to additional drawings. FIG. 1 is a perspective view of a processing apparatus according to this embodiment. FIG. 2 is an explanatory diagram of a processing method of a package substrate of a comparative example. The processing device of this embodiment is not limited to the configuration shown in FIG. 1. The processing method of the packaging substrate of this embodiment can be applied to any kind of processing device as long as it is a processing device capable of dividing the packaging substrate.
如圖1所示，加工裝置1是構成為使工作夾台12相對於切削機構14作相對移動，以將保持於工作夾台12上之封裝基板W分割成一個個晶片C(參照圖5)。封裝基板W是在長方形金屬板83的表面上將複數(在本實施形態中為3個)個樹脂製之凸部82排列於長邊方向上而設置。又，封裝基板W被分成配置有複數個凸部82之LED元件用的複數個元件區域A1與元件區域A1周圍的剩餘區域A2。各元件區域A1是藉由格子狀的分割預定線81而被劃分成複數個區域，且在各區域中配置有LED元件(圖未示)。 As shown in FIG. 1, the processing device 1 is configured to move the work table 12 relative to the cutting mechanism 14 to divide the package substrate W held on the work table 12 into wafers C (see FIG. 5). . The package substrate W is provided by arranging a plurality of (three in this embodiment) resin-made convex portions 82 on the surface of the rectangular metal plate 83 in the longitudinal direction. In addition, the package substrate W is divided into a plurality of element regions A1 for the LED element in which a plurality of convex portions 82 are arranged, and a remaining region A2 around the element region A1. Each element region A1 is divided into a plurality of regions by a grid-like dividing line 81, and LED elements (not shown) are arranged in each region.
此封裝基板W是將剩餘區域A2當作端材而去除，且元件區域A1沿著分割預定線81被分割成一個個晶片C(參照圖5)。再者，封裝基板W不限於LED元件用的基板，也可以是半導體元件用之基板。又，不限於搭載晶片後的基板，也可以是搭載晶片前的基板。封裝基板W之凸部82雖然是例如以環氧樹脂、矽氧樹脂所形成，但只要能在金屬板83上形成凸部82，則任何種類的樹脂均可。 In this package substrate W, the remaining area A2 is removed as an end material, and the element area A1 is divided into individual wafers C along the planned division line 81 (see FIG. 5). The package substrate W is not limited to a substrate for an LED element, and may be a substrate for a semiconductor element. The substrate is not limited to the substrate after the wafer is mounted, but may be a substrate before the wafer is mounted. Although the convex portion 82 of the package substrate W is formed of, for example, epoxy resin or silicone resin, any type of resin may be used as long as the convex portion 82 can be formed on the metal plate 83.
在加工裝置1之基台11上，設置有在X軸方向上移動工作夾台12之切削進給機構13。切削進給機構13包含有配置於基台11上之平行於X軸方向的一對導軌31，和設置成可在一對導軌31上滑動之馬達驅動X軸基台32。在X軸基台32的背面側上，分別形成圖未示之螺帽部，且在這些螺帽部中螺合有滾珠螺桿33。然後，藉由將連結於滾珠螺桿33之一端部的驅動馬達34旋轉驅動，就能使工作夾台12沿著導軌31在X軸方向上切削進給。 A cutting feed mechanism 13 is provided on the base table 11 of the processing device 1 to move the work clamp table 12 in the X-axis direction. The cutting feed mechanism 13 includes a pair of guide rails 31 arranged on the base 11 parallel to the X-axis direction, and a motor-driven X-axis base 32 provided to be slidable on the pair of guide rails 31. On the back side of the X-axis base 32, nut portions (not shown) are formed, and a ball screw 33 is screwed into these nut portions. Then, the drive motor 34 connected to one end of the ball screw 33 is rotationally driven, so that the work table 12 can be cut and fed along the guide rail 31 in the X-axis direction.
在X軸基台32上，是透過θ基台35將俯視下為長方形之工作夾台12設置成可旋轉。工作夾台12具有保持封裝基板W之吸引面41。在工作夾台12之吸引面41上是將複數個凹部42對應於封裝基板W之複數個凸部82，在長邊方向上排列而形成。工作夾台12之各凹部42是形成為具有與封裝基板W之各凸部82的高度一致的深度，而可收容封裝基板W之各凸部82。在各凹部42的周圍形成有支撐面43以支撐封裝基板W之凸部82的周圍之剩餘區域A2。 On the X-axis base 32, a work clamp 12 that is rectangular in a plan view is rotatably provided through a θ base 35. The work table 12 has an attraction surface 41 that holds the package substrate W. A plurality of concave portions 42 corresponding to a plurality of convex portions 82 of the package substrate W are formed on the suction surface 41 of the work clamp table 12 in the longitudinal direction. Each of the recesses 42 of the work clamp 12 is formed to have a depth corresponding to the height of each of the protrusions 82 of the package substrate W, and can accommodate each of the protrusions 82 of the package substrate W. A support surface 43 is formed around each concave portion 42 to support the remaining area A2 around the convex portion 82 of the package substrate W.
在工作夾台12之吸引面41上形成有對應於封裝基板W之分割預定線81而可讓切削刀71進入的進入溝44。在工作夾台12之之凹部42的底面(吸引面41)上形成有複數個吸引孔45，該等吸引孔45是在由進入溝44劃分成格子狀之區域中，吸引保持封裝基板W之分割後的一個個的晶片C。又，在凹部42的周圍之支撐面43(吸引面41)上形成有吸引保持封裝基板W之剩餘區域A2的複數個吸引孔46。各吸引孔45、46，各自通過工作夾台12內之流路而與吸引源23(參照圖3A)連接。 An entry groove 44 is formed on the suction surface 41 of the work clamp table 12 so as to allow the cutting blade 71 to enter in accordance with the planned division line 81 of the package substrate W. A plurality of suction holes 45 are formed on the bottom surface (suction surface 41) of the recessed portion 42 of the work clamp table 12, and the suction holes 45 attract and hold the package substrate W in a region divided into a grid by the entry groove 44 Each of the divided wafers C. Further, a plurality of suction holes 46 are formed in the support surface 43 (suction surface 41) around the recessed portion 42 to suck and hold the remaining area A2 of the package substrate W. Each of the suction holes 45 and 46 is connected to a suction source 23 (see FIG. 3A) through a flow path in the work table 12.
又，各吸引孔45也各自通過工作夾台12內之流路與空氣源24(參照圖3A)連接。在從工作夾台12往吸引源23及空氣源24的配管途中，設置有控制對貫通孔45、46之吸引力與吹送空氣之供給的閥25、26、27(參照圖3A)。在吸引保持分割前之封裝基板W時，藉由將各吸引孔45、46連通到吸引源23，可以使吸引面41成為負壓而吸引保持封裝基板W。要使封裝基板W之分割後的晶片C(參照圖5)分離時， 是藉由將各吸引孔45連通於空氣源24，以利用吹送空氣使晶片C從吸引面41分離。 Each suction hole 45 is also connected to an air source 24 (see FIG. 3A) through a flow path in the work table 12. Valves 25, 26, and 27 (see FIG. 3A) are provided along the piping from the work table 12 to the suction source 23 and the air source 24 to control the suction force to the through holes 45 and 46 and the supply of the blown air. When sucking and holding the package substrate W before the division, by connecting the suction holes 45 and 46 to the suction source 23, the suction surface 41 can be brought to a negative pressure to suck and hold the package substrate W. When separating the divided wafer C (see FIG. 5) of the package substrate W, By connecting each suction hole 45 to the air source 24, the wafer C is separated from the suction surface 41 by blowing air.
在基台11上，設置有已在局部形成開口以避開工作夾台12之移動路徑之立壁部21。在立壁部21上設置有將切削機構14在Y軸方向上及Z軸方向上移動之分度進給機構15與切入進給機構16。分度進給機構15具有配置於立壁部21前面之平行於Y軸方向的一對導軌51，和設置成可在一對導軌51上滑動之Y軸基台52。切入進給機構16具有配置於Y軸基台52上之平行於Z軸方向的一對導軌61，和設置成可在一對導軌61上滑動之Z軸基台62。 The base 11 is provided with an upright wall portion 21 that has been partially opened to avoid the moving path of the work clamp 12. The vertical wall portion 21 is provided with an index feed mechanism 15 and a cutting feed mechanism 16 that move the cutting mechanism 14 in the Y-axis direction and the Z-axis direction. The indexing feed mechanism 15 includes a pair of guide rails 51 arranged parallel to the Y-axis direction in front of the standing wall portion 21, and a Y-axis base 52 provided to be slidable on the pair of guide rails 51. The cut-in feed mechanism 16 includes a pair of guide rails 61 arranged on the Y-axis base 52 in parallel to the Z-axis direction, and a Z-axis base 62 provided to be slidable on the pair of guides 61.
Y軸基台52的背面側形成有螺帽部，在此螺帽部中螺合有滾珠螺桿53。又，在Z軸基台62的背面側形成有螺帽部，在此螺帽部中螺合有滾珠螺桿(圖未示)。在Y軸基台52用的滾珠螺桿53、Z軸基台62用的滾珠螺桿的一端部，各自連結有驅動馬達54、64。藉由使各個滾珠螺桿53被這些驅動馬達54、64旋轉驅動，可以將已固定在Z軸基台62上之切削機構14沿著導軌51、61在Y軸方向上分度進給，並在往Z軸方向上切入進給。 A nut portion is formed on the back side of the Y-axis base 52, and a ball screw 53 is screwed into the nut portion. A nut portion is formed on the back side of the Z-axis base 62, and a ball screw (not shown) is screwed into the nut portion. Drive motors 54 and 64 are connected to one end of the ball screw 53 for the Y-axis base 52 and the ball screw for the Z-axis base 62, respectively. By rotating each of the ball screws 53 by these drive motors 54 and 64, the cutting mechanism 14 fixed on the Z-axis base 62 can be indexed in the Y-axis direction along the guide rails 51 and 61, and The feed is cut in the Z axis direction.
切削機構14是在主軸72的前端裝設切削刀71而構成。切削刀71是藉由刀片蓋73使周圍被覆蓋，且在刀片蓋73上設置有朝向切削部分噴射切削水的切削水噴嘴74。切削水噴嘴74不但會在加工中噴射切削水，還在加工前與加工後作為將切削水供給以覆蓋至少封裝基板W之上表面的供水機構而發揮功能。又，在主軸72上設置有攝像機構 17，並根據攝像機構17之拍攝影像，使切削刀71相對於封裝基板W之分割預定線81被校準。 The cutting mechanism 14 is configured by attaching a cutting blade 71 to the front end of the main shaft 72. The cutting blade 71 is covered by the blade cover 73, and a cutting water nozzle 74 that sprays cutting water toward the cutting portion is provided on the blade cover 73. The cutting water nozzle 74 not only sprays cutting water during processing, but also functions as a water supply mechanism that supplies cutting water to cover at least the upper surface of the package substrate W before and after processing. An imaging mechanism is provided on the main shaft 72 17. Based on the image captured by the imaging mechanism 17, the cutting blade 71 is aligned with respect to the planned division line 81 of the package substrate W.
然而，如圖2A所示，分割前之封裝基板W會因金屬板83與凸部82之熱膨脹係數的不同而產生翹曲。又，如圖2B所示，封裝基板W之分割後的各晶片C，雖然一個個地被工作夾台12之各吸引孔45所保持，但因各吸引孔45在基台內是相連通的，所以當於一部分的吸引孔45上發生洩漏時，就會有也影響到其他吸引孔45的疑慮。此外，如圖2C所示，雖然也可從封裝基板W之表面側之樹脂製的凸部82進行切削，但是在切入樹脂時切削刀71會發熱。會因切削刀71的發熱使金屬板83的切削變困難而使毛邊89變嚴重。 However, as shown in FIG. 2A, the package substrate W before the division is warped due to a difference in thermal expansion coefficient between the metal plate 83 and the convex portion 82. Also, as shown in FIG. 2B, the divided wafers C of the package substrate W are held by the suction holes 45 of the work clamp 12 one by one, but the suction holes 45 communicate with each other in the base. Therefore, when a leakage occurs in a part of the suction holes 45, there is a concern that the other suction holes 45 are also affected. In addition, as shown in FIG. 2C, cutting can also be performed from the resin convex portion 82 on the front surface side of the package substrate W, but the cutting blade 71 generates heat when the resin is cut. Due to the heat generated by the cutter 71, cutting of the metal plate 83 becomes difficult and the burr 89 becomes serious.
此處，在本實施形態中，是在將封裝基板W的表面與工作夾台12的吸引面41之間已用切削水(水)充滿了的狀態下，使封裝基板W吸引保持於工作夾台12上，藉此矯正封裝基板W之翹曲(參照圖3)。又，在封裝基板W的分割後，是形成為藉由一邊以切削水密封工作夾台12之吸引面41，一邊以吹送空氣使晶片C分離，來抑制吹送空氣的洩漏(參照圖7)。此外，在封裝基板W的切削加工時，是藉由用切削刀71從封裝基板W之背面側的金屬板83進行切削，以利用切削水冷卻切削刀71與金屬板83來抑制金屬板83的毛邊的產生(參照圖4)。 Here, in this embodiment, the package substrate W is sucked and held on the work clamp in a state where the surface of the package substrate W and the suction surface 41 of the work clamp table 12 are filled with cutting water (water). On the stage 12, the warpage of the package substrate W is corrected (see FIG. 3). In addition, after the package substrate W is divided, the suction surface 41 of the work table 12 is sealed with cutting water, and the wafer C is separated by the blowing air to suppress the leakage of the blowing air (see FIG. 7). In addition, during the cutting process of the package substrate W, the metal plate 83 is cut from the metal plate 83 on the back side of the package substrate W by the cutting blade 71, and the cutting plate 71 and the metal plate 83 are cooled by the cutting water to suppress the metal plate 83 Generation of burrs (see Figure 4).
以下，參照圖3到圖6，就本實施形態的封裝基板之加工方法來加以說明。圖3為本實施形態之保持步驟的說 明圖。圖4為本實施形態之分割步驟的說明圖。圖5為本實施形態之剩餘區域去除步驟的說明圖。圖6為本實施形態之水充填步驟的說明圖。圖7為本實施形態之晶片回收步驟的說明圖。再者，保持步驟、分割步驟、剩餘區域去除步驟、水充填步驟、晶片回收步驟都只不過是其中一例，仍可作適當變更。 Hereinafter, a method of processing the package substrate according to this embodiment will be described with reference to FIGS. 3 to 6. Fig. 3 is a view showing the holding steps of this embodiment. Mingtu. FIG. 4 is an explanatory diagram of a dividing procedure in the embodiment. FIG. 5 is an explanatory diagram of a remaining area removing step according to this embodiment. FIG. 6 is an explanatory diagram of a water filling step according to this embodiment. FIG. 7 is an explanatory diagram of a wafer recovery step in this embodiment. Furthermore, the holding step, the dividing step, the remaining area removing step, the water filling step, and the wafer recovery step are just one example, and can be appropriately changed.
如圖3所示，首先實施保持步驟。如圖3A所示，在保持步驟中，是從切削機構14(參照圖4)之切削水噴嘴74將切削水供給到工作夾台12的吸引面41上，使工作夾台12的吸引面41被切削水充滿。此時，不但工作夾台12之凹部42，連凹部42之周圍的支撐面43也被切削水充滿。又，將吸引源23用之閥25、26關閉，而將吸引源23對吸引孔45、46的吸引力遮斷。同樣地，也將空氣源24用之閥27關閉，將空氣源24對吸引孔45之吹送空氣的供給停止。 As shown in FIG. 3, the holding step is performed first. As shown in FIG. 3A, in the holding step, cutting water is supplied from the cutting water nozzle 74 of the cutting mechanism 14 (see FIG. 4) to the suction surface 41 of the work clamp 12, and the suction surface 41 of the work clamp 12 is set. Filled with cutting water. At this time, not only the concave portion 42 of the work clamp table 12 but also the support surface 43 surrounding the concave portion 42 is filled with cutting water. In addition, the valves 25 and 26 for the suction source 23 are closed, and the attraction of the suction source 23 to the suction holes 45 and 46 is blocked. Similarly, the valve 27 for the air source 24 is closed, and the supply of the blowing air from the air source 24 to the suction hole 45 is stopped.
如圖3B所示，將封裝基板W的表面以朝下的狀態載置於工作夾台12之吸引面41上的切削水的水面上。藉此，使封裝基板W的表面與工作夾台12的吸引面41之間被切削水充滿，以藉由切削水使封裝基板W從工作夾台12之吸引面41浮起。此時，可將封裝基板W之表面側的凸部82定位至工作夾台12的凹部42。又，在封裝基板W上，會如上述地因樹脂製的凸部82與金屬板83的熱膨脹係數之不同而稍微產生翹曲。 As shown in FIG. 3B, the surface of the package substrate W is placed on the water surface of the cutting water on the suction surface 41 of the work clamp table 12 in a downward state. Thereby, the surface of the package substrate W and the suction surface 41 of the work chuck 12 are filled with cutting water, so that the package substrate W is floated from the suction surface 41 of the work chuck 12 by the cutting water. At this time, the convex portion 82 on the front surface side of the package substrate W can be positioned to the concave portion 42 of the work clamp table 12. In addition, as described above, the package substrate W is slightly warped due to the difference in thermal expansion coefficient between the resin-made convex portion 82 and the metal plate 83.
如圖3C所示，將吸引源23用之閥25、26打開而使吸引源23與吸引孔45、46連通，以在工作夾台12的吸引 面41上產生吸引力。可藉由吸引孔45、46吸引切削水，並且利用吸引力將封裝基板W吸引到吸引面41上。藉此，將封裝基板W之各凸部82收容於工作夾台12的各凹部42中。又，在封裝基板W的外周側的剩餘區域A2上，是一邊將切削水從工作夾台12擠壓到外側，一邊將剩餘區域A2朝支撐面43吸引。據此，在封裝基板W的表面與工作夾台12的吸引面41之間不會有空氣進入，且可將封裝基板W的翹曲強力地拉向支撐面43。 As shown in FIG. 3C, the valves 25 and 26 for the suction source 23 are opened to communicate the suction source 23 with the suction holes 45 and 46 so as to attract the work clamp 12. Attraction is generated on the surface 41. Cutting water can be sucked through the suction holes 45 and 46, and the package substrate W can be suctioned onto the suction surface 41 by the suction. Thereby, each convex part 82 of the package substrate W is accommodated in each concave part 42 of the work clamp table 12. In the remaining area A2 on the outer peripheral side of the package substrate W, the remaining area A2 is attracted toward the support surface 43 while pressing the cutting water from the work table 12 to the outside. Accordingly, air does not enter between the surface of the package substrate W and the suction surface 41 of the work table 12, and the warpage of the package substrate W can be strongly pulled toward the support surface 43.
並且，將封裝基板W之各凸部82吸引保持在工作夾台12的凹部42中，且將封裝基板W的剩餘區域A2吸引保持在工作夾台12的支撐面43上。像這樣，可使工作夾台12的吸引面41被封裝基板W氣密地密封，並藉由吸引面41的吸引力使封裝基板W的翹曲被矯正。再者，可對閥25、26的切換時機進行控制，而利用吸引孔45、46同時吸引保持封裝基板W之凸部82與剩餘區域A2亦可，也可以在利用吸引孔45吸引保持封裝基板W的凸部82後，用吸引孔46吸引保持封裝基板W的剩餘區域A2。 In addition, each convex portion 82 of the package substrate W is sucked and held in the concave portion 42 of the work clamp table 12, and the remaining area A2 of the package substrate W is sucked and held on the support surface 43 of the work clamp table 12. In this manner, the suction surface 41 of the work table 12 can be hermetically sealed by the package substrate W, and the warpage of the package substrate W can be corrected by the suction force of the suction surface 41. In addition, the switching timing of the valves 25 and 26 can be controlled. The suction holes 45 and 46 can simultaneously attract the convex portion 82 holding the package substrate W and the remaining area A2. The suction package 45 can also be used to attract and hold the package substrate. After the convex portion 82 of W, the remaining area A2 holding the package substrate W is attracted by the suction hole 46.
如圖4所示，在保持步驟後，是實施分割步驟。如圖4A所示，在分割步驟中，是藉由分度進給機構15使切削刀71在Y軸方向上移動以相對於封裝基板W之分割預定線81進行對位，並藉由切入進給機構16使切削刀71在Z軸方向上移動以下降到可將封裝基板W作全切(full-cut)的高度。然後，藉由工作夾台12相對於高速旋轉之切削刀71在X軸方向上移動，使切削刀71進入工作夾台12的進入溝44而將封 裝基板W沿著分割預定線81切削進給。 As shown in FIG. 4, after the holding step, a dividing step is performed. As shown in FIG. 4A, in the dividing step, the cutting blade 71 is moved in the Y-axis direction by the index feeding mechanism 15 to perform alignment with respect to the planned division line 81 of the package substrate W, and advances by cutting The feeding mechanism 16 moves the cutter 71 in the Z-axis direction to lower to a height at which the package substrate W can be full-cut. Then, the work clamp table 12 is moved in the X-axis direction relative to the cutting blade 71 rotating at a high speed, so that the cutter 71 enters the entry groove 44 of the work clamp table 12 to seal the seal. The mounting substrate W is cut and fed along a predetermined division line 81.
如圖4B所示，當封裝基板W沿著一個方向的所有分割預定線81被切削後，即可使工作夾台12旋轉90度，開始進行與一個方向之分割預定線81為直交之其他方向的分割預定線81的切削進給。其結果，可將封裝基板W分割成一個個晶片C，而使各晶片C被工作夾台12所吸引保持。在分割步驟中，因為工作夾台12之凹部42的深度與封裝基板W之凸部82的高度一致，所以在直到切削結束為止可將已小片化的晶片C持續吸引保持在相同的位置上。 As shown in FIG. 4B, after the package substrate W is cut along all the planned division lines 81 in one direction, the work clamp table 12 can be rotated 90 degrees to start other directions orthogonal to the planned division line 81 in one direction. The cutting feed of the dividing plan line 81. As a result, the package substrate W can be divided into individual wafers C, and each wafer C can be attracted and held by the work table 12. In the dividing step, since the depth of the recessed portion 42 of the work table 12 and the height of the convex portion 82 of the package substrate W are the same, the wafer C that has been reduced into pieces can be continuously sucked and held at the same position until the cutting is completed.
此時，封裝基板W的表面側被工作夾台12所吸引保持，並以切削刀71從封裝基板W之背面側的金屬板83切入。由於是將切削水直接供給到切削刀71以及金屬板83，所以可以藉由切削水將切削刀71以及金屬板83充分地冷卻。因為是在切削刀71以及金屬板83的發熱受到抑制的狀態下被切削，所以可以抑制金屬板83之毛邊的產生。據此，並不是像從封裝基板W的表面側之凸部82切入的情形一樣，在切削刀71發熱的狀態下切入金屬板83，因而可以一邊抑制毛邊的產生一邊有效地切斷封裝基板W。 At this time, the front surface side of the package substrate W is attracted and held by the work clamp table 12, and is cut into the metal plate 83 from the rear surface side of the package substrate W by a cutter 71. Since the cutting water is directly supplied to the cutting blade 71 and the metal plate 83, the cutting blade 71 and the metal plate 83 can be sufficiently cooled by the cutting water. Since the cutting is performed while the heat generation of the cutter 71 and the metal plate 83 is suppressed, the occurrence of burrs on the metal plate 83 can be suppressed. Accordingly, unlike the case of cutting through the convex portion 82 on the front surface side of the package substrate W, the metal plate 83 is cut while the cutting blade 71 is heated, so that the package substrate W can be effectively cut while suppressing the occurrence of burrs. .
如圖5所示，在分割步驟之後，會實施剩餘區域去除步驟。在剩餘區域去除步驟中，是與分割步驟同樣地，以切削刀71(參照圖4)切削封裝基板W之凸部82(晶片C)與剩餘區域A2的分界。並且，在吸引源23用之閥25已被打開的狀態下，僅閥26是被關閉的。藉此，可在原樣維持對一個個晶片C之吸引力的情形下，停止對於剩餘區域A2之吸 引力。然後，將剩餘區域A2從工作夾台12分離以作為端材廢棄。再者，剩餘區域去除步驟也可藉由操作員的手動作業實施，也可以藉由圖未示之去除裝置來實施。 As shown in FIG. 5, after the segmentation step, a remaining area removal step is performed. In the remaining area removing step, the boundary between the convex portion 82 (wafer C) of the package substrate W and the remaining area A2 is cut by the cutter 71 (see FIG. 4) in the same manner as in the dividing step. In a state where the valve 25 for the suction source 23 has been opened, only the valve 26 is closed. With this, it is possible to stop the suction of the remaining area A2 while maintaining the attraction to the individual wafers C as they are. gravitational. Then, the remaining area A2 is separated from the work clamp table 12 to be discarded as an end material. In addition, the remaining area removing step may be performed manually by an operator, or may be performed by a removing device (not shown).
如圖6所示，在剩餘區域去除步驟之後，會實施水充填步驟。在水充填步驟中，是從切削機構14(參照圖4)之切削水噴嘴74向一個個晶片C供給切削水，且以切削水覆蓋相鄰之晶片C之間以及晶片C的上表面。由於晶片C被切削水所淹沒，所以可藉由切削水確實地密封工作夾台12的吸引面41。再者，在水充填步驟中，並不受限於以切削水覆蓋全部晶片C之構成，只要使至少相鄰的晶片C之間被切削水充滿，即可充分地密封工作夾台12的吸引面41。 As shown in FIG. 6, after the remaining area removing step, a water filling step is performed. In the water filling step, cutting water is supplied from the cutting water nozzle 74 of the cutting mechanism 14 (see FIG. 4) to each wafer C, and the space between adjacent wafers C and the upper surface of the wafer C are covered with the cutting water. Since the wafer C is submerged by the cutting water, the suction surface 41 of the work clamp table 12 can be surely sealed by the cutting water. Furthermore, the water filling step is not limited to a structure in which all wafers C are covered with cutting water. As long as at least adjacent wafers C are filled with cutting water, the suction of the work clamp 12 can be fully sealed.面 41。 Face 41.
如圖7所示，在水充填步驟之後，會實施晶片回收步驟。如圖7A所示，在晶片回收步驟中，是在來自切削水噴嘴74之切削水的供給已停止的狀態下，將吸引源23用的閥25關閉，並將空氣源24用的閥27打開，以將工作夾台12的吸引切換成噴射。藉此，使吹送空氣從工作夾台12的吸引面41(凹部42)之吸引孔45噴射出來，使一個個晶片C從吸引面41分離。當一個個晶片C從工作夾台12的吸引面41分離時，即可藉由切削水使一個個晶片C上浮至吸引面41的上方。 As shown in FIG. 7, after the water filling step, a wafer recovery step is performed. As shown in FIG. 7A, in the wafer recovery step, when the supply of cutting water from the cutting water nozzle 74 is stopped, the valve 25 for the suction source 23 is closed and the valve 27 for the air source 24 is opened. To switch the suction of the work clamp table 12 to a jet. Thereby, the blowing air is ejected from the suction hole 45 of the suction surface 41 (recessed portion 42) of the work table 12, and the wafers C are separated from the suction surface 41. When the wafers C are separated from the suction surface 41 of the work clamp table 12, the wafers C can be floated above the suction surface 41 by cutting water.
此時，因為工作夾台12的吸引面41被切削水完全地密封，所以即使一部分的晶片C先分離，吹送空氣也不易從保持該一部分之晶片C的吸引孔45中洩漏。因此，不會有吹送空氣壓力大幅下降的情形，要做到藉由吹送空氣使晶 片C容易從工作夾台之吸引面41分離會變得可行。再者，取代從吸引孔45噴射吹送空氣之作法，改為噴射液體或氣體等流體，來使晶片C從工作夾台12的吸引面41分離亦可。 At this time, since the suction surface 41 of the work table 12 is completely sealed by the cutting water, even if a part of the wafer C is separated first, the blown air is unlikely to leak from the suction hole 45 holding the part of the wafer C. Therefore, there will not be a situation where the pressure of the blowing air drops drastically. It becomes feasible that the sheet C can be easily separated from the suction surface 41 of the work clamp. In addition, instead of spraying air from the suction hole 45, a fluid such as a liquid or a gas may be sprayed to separate the wafer C from the suction surface 41 of the work table 12.
如圖7B所示，當一個個晶片C從工作夾台12的吸引面41分離時，即可藉由切削水噴嘴74從工作夾台12的一端側噴灑切削水，而在吸引面41上形成流向工作夾台12的另一端側的切削水的流動。藉此，可使晶片C流到配置於工作夾台12的另一端側之晶片回收容器29中，以藉由晶片回收容器29將一個個晶片C回收。再者，也可以做成從空氣噴嘴噴射出空氣而製造切削水的流動，以取代從切削水噴嘴74噴射切削水而製造切削水的流動。 As shown in FIG. 7B, when the wafers C are separated from the suction surface 41 of the work table 12, cutting water can be sprayed from the one end side of the work table 12 by the cutting water nozzle 74 to form on the suction surface 41. The flow of cutting water flowing to the other end side of the work table 12. Thereby, the wafer C can be flowed into the wafer recovery container 29 disposed on the other end side of the work table 12, and the wafers C can be recovered by the wafer recovery container 29. Furthermore, instead of jetting the air from the air nozzle to produce a flow of cutting water, instead of jetting the cutting water from the cutting water nozzle 74 to produce a flow of cutting water.
如以上所述，根據本實施形態的封裝基板W之加工方法，是在已將封裝基板W之表面的凸部82收容在工作夾台12之吸引面41的凹部42的狀態下，以切削水充滿封裝基板W之表面與工作夾台12的吸引面41之間。然後，藉由將切削水吸引到複數個吸引孔45中，並且將封裝基板W吸引向吸引面41之複數個吸引孔45，以藉由封裝基板W將切削水從工作夾台12擠壓到外側。因此，空氣不會進入封裝基板W的表面與工作夾台12的吸引面41之間，而可在翹曲已被矯正的狀態下將封裝基板W吸引保持於工作夾台12上。又，在使封裝基板W之分割後的晶片C從工作夾台12分離時，是至少使相鄰的晶片C之間被切削水充滿，而使工作夾台12的吸引面41被切削水密封。因為可藉切削水之密封抑制吸引孔45之空氣的洩漏，所以即使一部分的晶片C先從吸引面 被分離，空氣吹送壓力也不會大幅降低。據此，可使晶片C容易藉由空氣吹送而從工作夾台12的吸引面41分離。 As described above, according to the method for processing the package substrate W according to this embodiment, the convex portion 82 on the surface of the package substrate W is housed in the recessed portion 42 of the suction surface 41 of the work clamp table 12 to cut water The surface between the package substrate W and the suction surface 41 of the work clamp 12 is filled. Then, the cutting water is sucked into the plurality of suction holes 45 and the package substrate W is attracted to the plurality of suction holes 45 of the suction surface 41 to squeeze the cutting water from the work clamp table 12 to the Outside. Therefore, air does not enter between the surface of the package substrate W and the suction surface 41 of the work clamp table 12, and the package substrate W can be sucked and held on the work clamp table 12 in a state where warpage has been corrected. When the divided wafer C of the package substrate W is separated from the work table 12, at least the adjacent wafers C are filled with cutting water, and the suction surface 41 of the work table 12 is sealed with the cutting water. . Since the leakage of the air in the suction hole 45 can be suppressed by the sealing of the cutting water, even if a part of the wafer C starts from the suction surface, Being separated, the air blowing pressure is not greatly reduced. Accordingly, the wafer C can be easily separated from the suction surface 41 of the work table 12 by air blowing.
再者，本發明並不受限於上述實施形態，且可進行各種變更而實施。在上述實施形態中，關於在附加圖式中所圖示之大小或形狀等，並不受限於此，且可在發揮本發明的效果的範圍內作適當變更。另外，只要在不脫離本發明的目的之範圍內，均可以作適當變更而實施。 In addition, the present invention is not limited to the above-mentioned embodiment, and can be implemented with various modifications. In the embodiment described above, the sizes, shapes, and the like shown in the attached drawings are not limited to this, and can be appropriately changed within a range where the effects of the present invention are exhibited. In addition, as long as it does not deviate from the objective of this invention, it can implement it suitably by changing.
例如，在上述實施形態中，雖然是以切削機構14之切削水噴嘴74構成供水機構，但是並不限定於此構成。除切削水噴嘴74之外，另外設置供水機構亦可。此時，供水機構只要是可將水供給到封裝基板W的上表面之構成即可，構成為將切削水以外的水供給到封裝基板W上亦可。 For example, in the above-mentioned embodiment, although the water supply mechanism is constituted by the cutting water nozzle 74 of the cutting mechanism 14, the structure is not limited to this. A water supply mechanism may be provided in addition to the cutting water nozzle 74. In this case, the water supply mechanism may be configured to supply water to the upper surface of the package substrate W, and may be configured to supply water other than the cutting water to the package substrate W.
又，在上述實施形態中，雖然是將封裝基板W構成為具有金屬板83，但是並不限定於此構成。封裝基板W也可以是不具有金屬板83的基板。 Moreover, in the said embodiment, although the package substrate W was comprised by the metal plate 83, it is not limited to this structure. The package substrate W may be a substrate without the metal plate 83.
又，在上述的實施形態中，雖然是將封裝基板W之加工方法做成包含剩餘區域去除步驟的構成，但也可以是不具有剩餘區域去除步驟的構成。當不具有剩餘區域去除步驟時，也可在吸引保持了封裝基板W之剩餘區域A2的狀態下，實施晶片回收步驟。 Moreover, in the said embodiment, although the processing method of the package substrate W was comprised as the structure which includes a remaining area removal step, it is good also as a structure which does not have a remaining area removal step. When there is no remaining area removal step, the wafer recovery step may be performed in a state where the remaining area A2 of the package substrate W is attracted and held.
又，在上述實施形態中，雖然是做成在分割步驟後實施剩餘區域去除步驟之構成，但並不限定於此構成。剩餘區域去除步驟只要可以在保持步驟與水充填步驟間實施即可，也可以在例如分割步驟前實施剩餘區域去除步驟。 亦即，也可以在將剩餘區域A2與形成晶片C之元件區域A1的分界切斷，而僅去除剩餘區域A2之後，再分割成一個個晶片C。此時，封裝基板W之加工方法是以保持步驟、切削元件區域A1與剩餘區域A2之分界的切削步驟、剩餘區域去除步驟、分割步驟、水充填步驟、晶片回收步驟之順序實施。 Moreover, in the said embodiment, although it was set as the structure which implements a remaining area removal step after a division process, it is not limited to this structure. The remaining area removing step may be performed between the holding step and the water filling step, and the remaining area removing step may be performed before, for example, the dividing step. That is, the boundary between the remaining area A2 and the element area A1 forming the wafer C may be cut, and only the remaining area A2 may be removed before being divided into individual wafers C. At this time, the processing method of the package substrate W is performed in the order of a holding step, a cutting step at the boundary between the cutting element region A1 and the remaining region A2, a remaining region removing step, a dividing step, a water filling step, and a wafer recovery step.
又，在上述之實施形態中，雖是是設定成在水充填步驟之後實施晶片回收步驟之步驟，但並不限定於此構成。晶片回收步驟只要可以在於水充填步驟中已用水充滿至少相鄰之晶片間的狀態下實施即可，也可以在例如水充填步驟的途中實施。 Moreover, in the said embodiment, although it was set as the process which implements a wafer collection | recovery process after a water filling process, it is not limited to this structure. The wafer recovery step may be performed in a state where at least the adjacent wafers have been filled with water in the water filling step, or may be performed during the water filling step, for example.
如以上所說明的，本發明是使封裝基板在已矯正的狀態下吸引保持於工作夾台上，並且具有可以使封裝基板之分割後的晶片容易從工作夾台分離的效果，特別是在車用LED的封裝基板之加工方法上是有用的。 As described above, the present invention enables the package substrate to be attracted and held on the work clamp in a corrected state, and has the effect that the separated wafer of the package substrate can be easily separated from the work clamp, especially in vehicles. It is useful in the processing method of the package substrate using LED.
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| JP2014-164716 | 2014-08-13 | ||
| JP2014164716A JP6312554B2 (en) | 2014-08-13 | 2014-08-13 | Processing method of package substrate |
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| TWI647865B true TWI647865B (en) | 2019-01-11 |
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| SG11201802381PA (en) * | 2016-03-31 | 2018-04-27 | Hoya Corp | Carrier and substrate manufacturing method using this carrier |
| JP2017213628A (en) * | 2016-05-31 | 2017-12-07 | 株式会社ディスコ | Cutting device |
| CN106670940A (en) * | 2016-12-12 | 2017-05-17 | 江门市楚材科技有限公司 | Polishing production line with workpieces and polishing equipment capable of achieving dual positioning |
| KR101931306B1 (en) * | 2016-12-20 | 2019-03-13 | (주) 엔지온 | Cutting apparatus and method for panel |
| JP6920063B2 (en) * | 2017-01-11 | 2021-08-18 | 株式会社ディスコ | How to hold a plate-shaped work |
| JP6896326B2 (en) * | 2017-03-06 | 2021-06-30 | 株式会社ディスコ | Processing equipment |
| JP6785735B2 (en) * | 2017-09-07 | 2020-11-18 | Ｔｏｗａ株式会社 | Cutting device and semiconductor package transport method |
| CN111418051B (en) * | 2017-11-10 | 2024-01-12 | 应用材料公司 | Patterning chuck for double sided processing |
| JP7102157B2 (en) * | 2018-02-08 | 2022-07-19 | Ｔｏｗａ株式会社 | Cutting device and manufacturing method of cut products |
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| JP2011115875A (en) * | 2009-12-02 | 2011-06-16 | Apic Yamada Corp | Cutting device and cutting method |
| CN103358409A (en) * | 2012-04-09 | 2013-10-23 | 株式会社迪思科 | Cutting device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160020352A (en) | 2016-02-23 |
| CN105374710A (en) | 2016-03-02 |
| JP2016040808A (en) | 2016-03-24 |
| JP6312554B2 (en) | 2018-04-18 |
| KR102204848B1 (en) | 2021-01-18 |
| TW201607082A (en) | 2016-02-16 |
| CN105374710B (en) | 2019-09-06 |
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