TWI623883B - 轉頻層及其製造方法 - Google Patents
轉頻層及其製造方法 Download PDFInfo
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Abstract
本發明係有關於一種轉頻層,特別是用以製造晶片卡之轉頻層。轉頻層具有天線基板,天線基板配置有由導體線路形成之天線於天線基板之天線側,天線基板具有晶片容置空間形成於天線基板內之凹部,且晶片容置空間用以容置晶片,其中作為天線之末端之導體線路末端係形成在天線基板之晶片容置空間之底部,底部相對於天線基板之背側凹入,配置在晶片之接觸側上的末端接點係與天線之末端上之平坦接面互相接觸,以使晶片容置在晶片容置空間,且晶片係以其本身之半導體主體之背側面對末端接點以實質上與天線基板之背側齊平同高。此外,本發明更有關於一種製造轉頻層之方法。
Description
本發明係有關於一種轉頻層,特別是用以製造晶片卡之轉頻層。轉頻層具有天線基板,天線基板配置有由導體線路形成之天線於天線基板之天線側,天線基板具有晶片容置空間形成於天線基板內之凹部,且晶片容置空間用以容置晶片,其中作為天線之末端之導體線路末端係形成在天線基板之晶片容置空間之底部,底部相對於天線基板之背側凹入,配置在晶片之接觸側上的末端接點係與天線之末端上之平坦接面互相接觸,以使晶片容置在晶片容置空間,且晶片係以其本身之半導體主體之背側面對末端接點以實質上與天線基板之背側齊平同高。
此外,本發明係有關於一種具有轉頻層之卡片內嵌層以及具有卡片內嵌層之晶片卡與製造轉頻層之方法。
使用多層結構之方式製造用於與讀取裝置進行非接觸式之訊息交流以及具有在載體基板上與晶片接觸之轉頻層係為大眾所知悉,其中一層疊層係具有由導體線路所形成的天線,且天線之末端係和晶片接觸。舉例來說,
此種轉頻層的配置方式可以為一種非接觸式之晶片、一種轉發層標籤或一種轉發層信標。
特別是在製造非接觸式晶片卡時,眾所皆知的是,為了晶片可以方便地與天線接觸且為了使晶片具有機械性的保護,可使晶片設置於接觸載體的殼體內,其中接觸載體可與晶片一起形成晶片模組並容置於殼體內。在由接觸載體形成之接觸表面上,晶片模組所具有相較於晶片的末端表面放大許多之晶片模組接觸表面,且可使晶片與天線之末端有較好的接觸。
與晶片之半導體本身的尺寸相比較下,晶片模組係具有實質上較大的外部尺寸。特別是晶片模組的高度就實質上高過於實際的晶片,因此要使晶片模組配置於疊層結構內將需要相當對應數量之疊層。一般來說,已知的具有疊層結構之晶片卡係具有第一層疊層用以容置具有較大端點表面之晶片模組之晶片載體,且更具有第二層疊層用以容置圍繞在晶片之半導體本體之殼體於整個疊層結構中。假使在一般的情況下,至少更需要額外一層疊層以分別地用於覆蓋天線基板的天線以及晶片模組,傳統所習知設計為層疊結構之晶片卡,最少都會需要四層疊層,其中額外可視之外部疊層也可能被疊加,當作晶片卡之外部配置的材料。
本發明之一目的係使製造晶片卡時僅須利用最少可能數目之疊層成為可能。
為了實現上述目的,根據本發明之用以製造晶片卡之轉頻層具有如請求項1之技術特徵,根據本發明之卡片內嵌層具有如請求項4之技術特徵,
根據本發明之晶片卡具有如請求項5之技術特徵以及根據本發明之轉頻層之製造方式具有如請求項7之技術特徵。
根據本發明之轉頻層,其可具有天線基板,天線基板可配置有由導體線路形成之天線於天線基板之天線側,天線基板可具有晶片容置空間可形成於天線基板內之凹部,且晶片容置空間可用以容置晶片,其中作為天線之末端之導體線路末端可形成在天線基板之晶片容置空間之底部,底部相對於天線基板之背側可為凹入,配置在晶片之接觸側上的末端接點可與天線之末端上之平坦接面互相接觸,以使晶片容置在晶片容置空間,且晶片可以其本身之半導體主體之背側面對末端接點以實質上與天線基板之背側齊平同高。
根據本發明所形成之轉頻層使得無需使用額外的殼體以容置晶片,且將晶片僅容置於一層疊層內成為可能。特別使用於形成天線之末端且用以接觸晶片之線路導體末端可包含平坦接面,平坦接面可直接地與晶片的末端接點接觸,而不再需要用以提供較大末端表面之接觸載體設置在晶片與天線之末端。
與導體線路末端之截面之凸出之接觸輪廓不同的是,導體線路末端之平坦接面形成有較大的末端接觸表面,以使其與晶片的末端接點可以穩固的接觸。藉由晶片以及晶片的半導體本體個別地配置以與天線基板之表面實質上齊平同高,晶片可穩固地容置於天線基板之凹部,而不會使晶片容置於天線基板之凹部時產生凸出天線基板之表面之部分,以造成可能額外的疊層需求。以這種方式,可製造出僅由天線基板相對於其外部尺寸而定義之轉頻層,因此無須再建立使天線基板為了用以容置晶片之額外的疊層。
在本發明之轉頻層之較佳的實施例中,晶片容置空間可形成為為天線基板內之窗孔,且導體線路末端之平坦接面可形成為晶片容置空間的底部。此實施例具有特定之優點在於天線基板的凹部可在從導體線路形成且配置天線在天線基板之前就已經形成好,因此導體線路末端可以自由地與在其之後安裝的晶片接觸,而不須為了此種需要採用天線基板的特殊製程。
在本發明之轉頻層之其他的實施例中,晶片容置空間可形成為為天線基板內之凹陷且具有由天線基板形成之底部,其中末端之平坦接面可設置於晶片容置空間之底部。此較佳的實施例使得採用一般普通製程步驟用以形成導體線路末端之平坦接面以及天線基板之凹陷係有可能的。
根據本發明之卡片內嵌層,其可包含根據本發明之轉頻層,其中轉頻層可為設置於具有複數個覆蓋層之複合層所包含之下覆蓋層與上覆蓋層之間之中間層,其中下覆蓋層可設置於天線基板之天線側且上覆蓋層可同時設置於天線基板之背側以及晶片之半導體主體之背側。
如此一來,可使用作為製造晶片卡的半完成品之卡片內嵌層可包括了在僅有三個疊層之疊層結構中,受保護地配置有天線以及晶片。
在最低數量的配置中,根據本發明之晶片卡可包含本發明之卡片內嵌層,其中晶片卡之下外層可藉由卡片內嵌層之下覆蓋層形成,且晶片卡之上外層可藉由卡片內嵌層之上覆蓋層形成。
如此一來,晶片卡可以形成所謂的”白卡”,透過,例如,直接標記或印記的外部層就可以使得僅用三個疊層,亦即轉頻層、下覆蓋層與上覆蓋,組成之疊層結構製作出完整之晶片卡成為可能。
縱使根據本發明一實施例之附加有下覆蓋層以及上覆蓋層晶片卡,為了達到特定的配置而具有下外層以及上外層,此種晶片卡的配置方式仍然是具有可由最小可能數量之疊層所形成之疊層結構之特點。
當進行根據本發明之轉頻層之製造方法時,可形成天線基板,天線基板配置有由導體線路形成之天線於天線基板之天線側,天線基板在形成於天線基板內之晶片容置空間之區域接收來自天線基板之背側之能量,晶片容置空間之區域位於整個底部上,藉由導體線路所形成之天線之末端朝向天線基板之背側之平坦接面而延伸形成。接續著,設置於晶片之接觸側之平坦接面與晶片之末端接點之接觸係藉由晶片被容置在天線基板中且晶片可以其本身之半導體主體之背側面對末端接點以實質上與天線基板之背側齊平同高。
根據本發明之方法之有利的變化,更包含透過使導體線路形成天線之末端之重製製程,以形成平坦接面。舉例來說,形成平坦接面的方式可藉由沖壓工具(stamping tool)以使導體線路之截面產生變形以形成平坦接面。
或者,藉由有效地切割方式之機械製程以形成平坦接面也是有可能的。舉例來說,藉由銑削刀具或研磨工具之研磨方式。
當平坦接面可藉由雷射處理導體線路末端之方式以形成時,導體線路末端之非接觸式製程以形成平坦接面也是有可能的。
用以將晶片之末端接點與導體線路末端之平坦接面接觸之方法,特別是在當晶片之末端接點具有金屬接觸凸塊時,施加壓力與溫度於形成天線之末端之導體線路上以其接觸已被證明是具有優勢的。
尤其是在當從導電膠具有複數個接觸凸塊之晶片上之末端接點用於後續接觸的情況下,通過施加壓力於形成天線之末端之導體線路以完成接觸亦被證實是具有優勢的。
除了上述在晶片上之末端接點可具有接觸凸塊之方式之外,在接觸的過程中利用施加壓力至接觸凸塊的方式以使晶片之半導體本體之後側與天線基板之後側調整成為水平齊高之排列方式,在任何實施態樣下都是具有其優勢的。
10‧‧‧轉頻層
11‧‧‧天線側
12‧‧‧天線基板
13‧‧‧導體線路
14‧‧‧天線
15‧‧‧末端
17‧‧‧窗孔
18‧‧‧截面積
19、38‧‧‧平坦接面
20、42‧‧‧底部
21‧‧‧晶片
22‧‧‧末端接點
24‧‧‧接觸凸塊
26‧‧‧天線基板之背側
27‧‧‧半導體主體之背側面
28‧‧‧半導體主體
29‧‧‧卡片內嵌層
30‧‧‧下覆蓋層
31‧‧‧上覆蓋層
32‧‧‧末端截面積
33‧‧‧壓縮印模
34‧‧‧接觸截面積
35‧‧‧平坦接觸截面積
36‧‧‧接觸側
37‧‧‧安裝版
40‧‧‧凹陷
41‧‧‧旋轉銑削刀具
43‧‧‧接觸表面
於下文中,本發明之轉頻層以及使用轉頻層分別地製造卡片內嵌層及晶片卡之較佳實施例將會配合圖式進行較詳細的描述。
在圖式中:第1圖繪示了本發明之轉頻層之上視圖。
第2圖繪示了本發明之轉頻層之縱向剖面圖。
第3圖繪示了本發明之轉頻層製造晶片卡之卡片內嵌層之縱向剖面圖。
第4a圖與第4b圖繪示了本發明基於第一實施例之天線基板之轉頻層之製造示意圖。
第5a圖與第5b圖繪示了本發明之晶片與第4a圖與第4b圖之天線基板之接觸示意圖。
第6a圖與第6b圖繪示了本發明基於第二實施例之天線基板之轉頻層之製造示意圖。
第7圖繪示了本發明之晶片與第6a圖與第6b圖之天線基板之接觸示意圖。
請參閱第1圖與第2圖,設置於天線基板12之天線側11之轉頻層10可具有由導體線路13所形成之天線14。天線14可包含由位於天線側11之導體線路13形成的兩個末端15,天線14穿越形成位在天線基板12內之窗孔17。
再參閱第2圖,在此實施例中,用以形成天線14的導體線路13能以其部分導體線路之截面18嵌入於天線基板12,例如可由PVC所構成之天線基板12。可再從第1圖與第2圖中得知,天線14之末端15之區域可穿越窗孔17,導體線路13可包含有平坦接面19,其可形成於藉由窗孔17所形成於天線基板12之凹部的底部20。在窗孔17內,晶片21可嵌入,其中晶片21之末端接點22可具有接觸凸塊24並與平坦接面19相接觸,舉例來說接觸凸塊24可為金屬形成,接觸凸塊24可直接地朝向天線基板12之背側26。在此情況下,晶片21可容置於窗孔17中,且晶片12本身之半導體主體28之背側27與天線基板12之背側26齊平同高。
第3圖繪示了卡片內嵌層29,其係形成為疊層結構且可容置如第2圖所繪示之轉頻層10,以使轉頻層10可作為設置於下覆蓋層30與上覆蓋層31之間之中間層,其中下覆蓋層30設置於天線基板12之天線側11,上覆蓋層31設置於天線基板12之背側26,下覆蓋層30與上覆蓋層31組成複合層。
值得注意的是,上覆蓋層31係同時設置於天線基板12之背側以及晶片之半導體主體28之背側。
在第4a圖以及第4b圖中,製造由導體線路13形成之天線14的末端15之平坦接面19的可能性已被描述。請依照第4a圖至第4b圖的順序來看,由第4a圖開始,具有未加工的導體線路截面18之導體線路13延伸跨越天線基板12之窗孔17,具有實質上對應至窗孔17截面積之之末端截面32的壓縮印模33可從天線基板12之背側26壓印導體線路13,以使其藉由在窗孔17之區域內進行重製製程的方式,形成平坦接面19,平坦接面19具有背離未加工的導體線路截面18之接觸截面34,接觸截面34在平坦接面19的區域上形成實質上平坦接觸表面35。
在第5a圖以及第5b圖中,繪示接觸製程,在進行過程中,晶片21從天線基板12之背側26嵌入窗孔17且藉由其接觸側36直接地與平坦接面19接觸,其中接觸凸塊24鄰接平坦接面19之接觸表面35。以熱壓印的方式當做描述第5a圖以及第5b圖之示範態樣,熱熔接觸凸塊24且同時地施加壓力至晶片21。如第5b圖所繪示的,溫度與壓力係互相配合可使晶片21之半導體本體28之背側27可與天線基板12之背側26齊平等高被完成。較佳地,於接觸過程中所需要的壓力係施加在半導體本體28之背側27,然而使接觸凸塊24熱熔之熱能係在接觸過程中可藉由安裝板37加熱導體線路13而達成。
在第6a圖以及第6b圖中,在形成天線14之末端15之導體線路13,以形成平坦接面19的另一種可能性亦被描述。其中在天線基板12上形成凹陷40的同時也可一併形成平坦接面38,凹陷40可用於容置晶片21(如第7圖所繪示)。
根據本實施所繪示的另一實施態樣,旋轉銑削刀具41可朝著設置於天線基板12天線側11之導體線路13從天線基板12的背側26被導引。在此過程中,凹陷40的底部42形成於天線基板內12,且平坦接面38與其接觸表面43係為齊平等高之設置。
如同於第5a圖以及第5b圖之描述,晶片21與設置於天線基板12之天線14之接觸可藉由將晶片21嵌入天線基板12之背側26之凹陷40處完成,且在同一時間,晶片21也可透過設置其之末端接點22之接觸凸塊24與平坦接面38互相接觸。
Claims (5)
- 一種轉頻層之製造方法,該轉頻層係用以製造一晶片卡且包含:一天線基板,該天線基板配置有由一導體線路形成之一天線於該天線基板之一天線側,該天線基板具有一晶片容置空間形成於該天線基板內之一凹部且該晶片容置空間用以容置一晶片,其中作為該天線之一末端之導體線路末端係形成在該天線基板之該晶片容置空間之一底部,該底部相對於該天線基板之一背側凹入,配置在該晶片之一接觸側上的末端接點係與該天線之該末端上之一平坦接面互相接觸,以使該晶片容置在該晶片容置空間,且該晶片係以其本身之半導體主體之一背側面對該末端接點以實質上與該天線基板之該背側齊平同高,該方法包含:形成該天線基板,該天線基板配置有由該導體線路形成之該天線於該天線基板之該天線側,該天線基板在形成於該天線基板內作為一窗孔之該晶片容置空間之區域,其接收來自該天線基板之該背側之一能量,該晶片容置空間之區域位於該底部上,藉由該導體線路所形成之該天線之該末端朝向該天線基板之該背側之該平坦接面而延伸形成,其中該平坦接面係藉由使用一壓縮印模透過該窗孔壓印該天線基板之該背側而形成;且接著,設置於該晶片之該接觸側之該平坦接面與該晶片之該末端接點之接觸係藉由該晶片被容置在該天線基板中且該晶片係以其本身之該半導體主體之該背側面對該末端接點以實質上與該天線基板之該背側齊平同高,其中,更包含通過施加壓力於形成該天線之該末端之該導體線路,並通過加熱該末端接點以將該末端接點熱熔,以使具有複數個金屬接觸凸塊之該晶片上之該末端接點與該平坦接面互相接觸。
- 如申請專利範圍第1項所述之方法,更包含透過使該導體線路形成該天線之該末端之一重製製程,以形成該平坦接面。
- 如申請專利範圍第1項所述之方法,更包含透過使該導體線路形成該天線之該末端之一機械加工製程,以形成該平坦接面。
- 如申請專利範圍第1項所述之方法,更包含透過使該導體線路形成該天線之該末端之一雷射處理方法,以形成該平坦接面。
- 如申請專利範圍第1項至第4項中其中一項所述之方法,更包含通過施加壓力於形成該天線之該末端之該導體線路,以使藉一導電膠而具有複數個接觸凸塊之該晶片上之該末端接點與該平坦接面互相接觸。
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PL2836966T3 (pl) | 2018-08-31 |
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ES2670664T3 (es) | 2018-05-31 |
DE102012205768B4 (de) | 2019-02-21 |
EP2836966A1 (de) | 2015-02-18 |
CN104303195B (zh) | 2018-08-31 |
DE102012205768A1 (de) | 2013-10-10 |
WO2013152840A1 (de) | 2013-10-17 |
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CN104303195A (zh) | 2015-01-21 |
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