CN104303195A - 转频层及其制造方法 - Google Patents

转频层及其制造方法 Download PDF

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CN104303195A
CN104303195A CN201380018642.8A CN201380018642A CN104303195A CN 104303195 A CN104303195 A CN 104303195A CN 201380018642 A CN201380018642 A CN 201380018642A CN 104303195 A CN104303195 A CN 104303195A
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马丁·古乔斯基
曼弗雷德·雷兹勒
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Abstract

本发明涉及一种转频层(10)，特别是用于制造芯片卡的转频层，转频层具有天线基板(12)，天线基板设置由导体线路(13)形成的天线(14)在天线基板的天线侧(11)，天线基板具有芯片容置空间形成于天线基板内的凹部，且芯片容置空间用于容置芯片(21)，其中作为天线末端的导体线路末端(15)形成在天线基板的芯片容置空间的底部(20)，底部相对于天线基板(12)的背侧(26)凹入，设置在芯片的接触面(36)上的末端接点(22)与天线的末端(15)上的平坦接面(19)互相接触，以使芯片容置在芯片容置空间，且芯片以其本身的半导体主体(28)的背侧面(27)对末端接点以实质上与天线基板的背侧对齐。此外，本发明进一步涉及一种制造转频层的方法。

Description

转频层及其制造方法
技术领域
本发明涉及一种转频层，特别是用于制造芯片卡的转频层。转频层具有天线基板，天线基板设置有由导体线路形成的天线在天线基板的天线侧，天线基板具有芯片容置空间形成于天线基板内的凹部，且芯片容置空间用于容置芯片，其中作为天线末端的导体线路末端形成在天线基板的芯片容置空间的底部，底部相对于天线基板的背侧凹入，设置在芯片接触侧上的末端接点与天线末端上的平坦接面互相接触，以使芯片容置在芯片容置空间，且芯片以其本身的半导体主体的背侧面对末端接点以实质上与天线基板的背侧齐平。
此外，本发明有关一种具有转频层的卡片内嵌层以及具有卡片内嵌层的芯片卡与制造转频层的方法。
背景技术
使用多层结构的方式制造用于与读取装置进行非接触式的讯息交流以及具有在载体基板上与芯片接触的转频层为大众熟知，其中层迭层具有由导体线路所形成的天线，且天线末端和芯片接触。例如，此种转频层的设置方式可以为一种非接触式芯片、一种转发层标签或一种转发层信标。
特别是在制造非接触式芯片卡时，众所皆知的是，为了芯片可以方便地与天线接触且为了使芯片具有机械性的保护，可使芯片设置于接触载体的壳体内，其中接触载体可与芯片一起形成芯片模块并容置在壳体内。在接触载体形成的接触表面上，芯片模块具有相较于芯片的末端表面放大许多的芯片模块接触表面，且可使芯片与天线的末端有较好的接触。
与芯片半导体本身的尺寸相比较下，芯片模块具有实质上较大的外部尺寸。特别是芯片模块的高度就实质上高于实际的芯片，因此要使芯片模块设置于迭层结构内将需要对应数量的迭层。一般来说，已知的具有迭层结构的芯片卡具有第一层迭层用于容置具有较大端点表面的芯片模块的芯片载体，且还具有第二层迭层用于容置围绕在芯片半导体本体的壳体于整个迭层结构中。假使在一般的情况下，至少还需要额外一层迭层以分别地用于覆盖天线基板的天线以及芯片模块，传统所熟悉的设计为层迭结构的芯片卡，最少都会需要四层迭层，其中额外可视的外部迭层也可能被迭加，作为芯片卡外部设置的材料。
发明内容
(一)要解决的技术问题
本发明的目的是在使制造芯片卡时仅须利用最少可能数目的迭层成为可能。
(二)技术方案
为了实现上述目的，根据本发明用于制造芯片卡的转频层具有如权利要求1所述的技术特征，根据本发明的卡片内嵌层具有如权利要求4所述的技术特征，根据本发明的芯片卡具有如权利要求5所述的技术特征以及根据本发明转频层的制造方式具有如权利要求7所述的技术特征。
根据本发明的转频层可具有天线基板，天线基板可设置由导体线路形成的天线在天线基板的天线侧，天线基板可具有芯片容置空间可形成在天线基板内的凹部，且芯片容置空间可用于容置芯片，其中作为天线末端的导体线路末端可形成在天线基板的芯片容置空间的底部，底部相对于天线基板的背侧可为凹入，设置在芯片接触侧上的末端接点可与天线末端上的平坦接面互相接触，以使芯片容置在芯片容置空间，且芯片可以其本身半导体主体的背侧面对末端接点以实质上与天线基板的背侧齐平。
根据本发明所形成的转频层使得无需使用额外的壳体容置芯片，且使得将芯片仅设置在层迭层内成为可能。特别使用在形成天线末端且用于接触芯片的线路导体末端可包含平坦接面，平坦接面可直接地与芯片的末端接点接触，而不再需要用于提供较大末端表面的接触载体设置在芯片与天线的末端。
与导体线路末端截面的凸出的接触轮廓不同的是，导体线路末端的平坦接面形成有较大的末端接触表面，以使其与芯片的末端接点可以稳固的接触。通过芯片以及芯片的半导体本体个别地设置以与天线基板的表面实质上齐平，芯片可稳固地容置于天线基板的凹部，而不会使芯片容置于天线基板的凹部时产生凸出天线基板表面的部分，以造成可能有额外的迭层的需求。以这种方式，可制造出仅由天线基板相对于其外部尺寸而定义的转频层，因此无须再建立使天线基板为了用于容置芯片的额外的迭层。
在本发明的转频层的较佳实施例中，芯片容置空间可形成为天线基板内的窗孔，且导体线路末端的平坦接面可形成为芯片容置空间的底部。此实施例具有特定的优点在于天线基板的凹部可在从导体线路形成且设置天线在天线基板之前就已经形成好，因此导体线路末端可以自由地与在其之后安装的芯片接触，而无须为了此种需要采用天线基板的特殊工艺。
在本发明的转频层的其它实施例中，芯片容置空间可形成为天线基板内的凹陷且具有由天线基板形成的底部，其中末端的平坦接面可设置于芯片容置空间的底部。此较佳的实施例使得采用一般普通工艺步骤用于形成导体线路末端的平坦接面以及天线基板的凹陷是有可能的。
根据本发明的卡片内嵌层，其可包含根据本发明的转频层，其中转频层可以设置于具有多个覆盖层的复合层所包含的下覆盖层与上覆盖层之间的中间层，其中下覆盖层可设置于天线基板的天线侧且上覆盖层可同时设置于天线基板的背侧以及芯片的半导体主体的背侧。
至此，可使用作为制造芯片卡半完成品的卡片内嵌层可包括了在仅有三个迭层的迭层结构中，受保护地设置有天线以及芯片。
在最少数量的配置中，根据本发明的芯片卡可包括本发明的卡片内嵌层，其中芯片卡的下外层可通过卡片内嵌层的下覆盖层形成，且芯片卡的上外层可通过卡片内嵌层的上覆盖层形成。
由此，芯片卡可以形成所谓的“白卡”，透过如直接标记或印记的外部层就可以使得仅用三个迭层，即转频层、下覆盖层及上覆盖，组成的迭层结构制作出完整的芯片卡成为可能。
即使根据本发明实施例的附加有下覆盖层以及上覆盖层芯片卡，为了达到特定的设置而具有下外层以及上外层，此种芯片卡的设置方式仍然是具有可由最少可能数量的迭层所形成的迭层结构的特点。
当进行根据本发明的转频层的制造方法时，可形成天线基板，天线基板设置有由导体线路形成的天线于天线基板的天线侧，天线基板在形成于天线基板内的芯片容置空间的区域接收来自天线基板背侧的能量，芯片容置空间的区域位于整个底部上，通过导体线路所形成天线的末端朝向天线基板背侧的平坦接面而延伸形成。然后，设置于芯片接触侧的平坦接面与芯片末端接点的接触通过芯片被容置在天线基板中且芯片可以其本身的半导体主体的背侧面对末端接点以实质上与天线基板的背侧齐平。
根据本发明方法的有利变化，更包含透过使导体线路形成天线末端的重制工艺，以形成平坦接面。例如，形成平坦接面的方式可通过冲压工具(stamping tool)以使导体线路的截面产生变形以形成平坦接面。
或者通过有效切割方式的机械工艺形成平坦接面也是有可能的。例如，通过铣削刀具或磨具的研磨方式。
当平坦接面通过激光处理导体线路末端的方式形成时，导体线路末端的非接触式工艺以形成平坦接面也是有可能的。
用于将芯片的末端接点与导体线路末端的平坦接面接触的方法，特别是在当芯片的末端接点具有金属接触凸块时，施加压力与温度于形成天线末端的导体线路上以接触已被证明是具有优势的。
尤其是在当从导电胶具有多个接触凸块的芯片上的末端接点用于后续接触的情况下，通过施加压力于形成天线末端的导体线路以完成接触亦被证实是具有优势的。
除了上述在芯片上的末端接点可具有接触凸块的方式之外，在接触的过程中利用施加压力至接触凸块的方式以使芯片的半导体本体的后侧与天线基板的后侧调整成为水平等高的排列方式，在任何实施情况下都是具有其优势的。
附图说明
在下文中，本发明的转频层以及使用转频层分别地制造卡片内嵌层及芯片卡的较佳实施例将会参照附图方式进行详细的描述。
在附图中：
图1示出了本发明的转频层的上视图。
图2示出了本发明的转频层的纵向剖面图。
图3示出了本发明的转频层制造芯片卡的卡片内嵌层的纵向剖面图。
图4a与图4b示出了本发明基于第一实施例的天线基板的转频层的制造示意图。
图5a与图5b示出了本发明的芯片与图4a与图4b的天线基板的接触示意图。
图6a与图6b示出了本发明基于第二实施例的天线基板的转频层的制造示意图。
图7示出了本发明的芯片与图6a与图6b的天线基板的接触示意图。
具体实施方式
请参照图1与图2，设置于天线基板12的天线侧11的转频层10可具有由导体线路13所形成的天线14。天线14可包括由位于天线侧11的导体线路13形成的两个末端15，天线14穿过形成位于天线基板12内的窗孔17。
再参照图2，在此实施例中，用于形成天线14的导体线路13能以其部分导体线路的截面18嵌入天线基板12，例如可由PVC所构成的天线基板12。再从图1与图2中得知，天线14的末端15的区域可穿过窗孔17，导体线路13可包括平坦接面19，其可形成于通过窗孔17所形成于天线基板12的凹部的底部20。在窗孔17内，芯片21可嵌入，其中芯片21的末端接点22可具有接触凸块24并与平坦接面19相接触，例如接触凸块24可为金属形成，接触凸块24可直接地朝向天线基板12的背侧26。在此，芯片21可容置于窗孔17中，且芯片12本身的半导体主体28的背侧27与天线基板12的背侧26齐平。
图3示出了卡片内嵌层29，其形成为迭层结构且可容置如图2所示出的转频层10，以使转频层10作为设置于下覆盖层30与上覆盖层31之间的中间层，其中下覆盖层30设置于天线基板12的天线侧11，上覆盖层31设置于天线基板12的背侧26，下覆盖层30与上覆盖层31组成复合层。
值得注意的是，上覆盖层31同时设置于天线基板12的背侧以及芯片半导体主体28的背侧。
在图4a以及图4b中，制造由导体线路13形成天线14的末端15的平坦接面19的可能性已被描述。请依照图4a至图4b的顺序来看，由图4a开始，具有未加工的导体线路截面18的导体线路13延伸跨越天线基板12的窗孔17，具有实质上对应至窗孔17截面积的末端截面32的压缩印模33可从天线基板12的背侧26压印导体线路13，以使其通过在窗孔17的区域内进行重制工艺的方式，形成平坦接面19，平坦接面19具有背离未加工的导体线路截面18的接触截面34，接触截面34在平坦接面19的区域上形成实质上平坦接触表面35。
在图5a以及图5b中，示出接触工艺，在进行过程中，芯片21从天线基板12的背侧26嵌入窗孔17且通过其接触侧36直接地与平坦接面19接触，其中接触凸块24邻接平坦接面19的接触表面35。以热压印的方式作为描述图5a以及图5b的示范情况，热熔接触凸块24且同时施加压力至芯片21。如图5b所示出的，通过温度与压力互相配合完成芯片21的半导体本体28的背侧27与天线基板12的背侧26齐平。优选地，在接触过程中所需要的压力施加在半导体本体28的背侧27，然而使接触凸块24热熔的热能在接触过程中可通过安装板37加热导体线路13而达成。
在图6a以及图6b中，在形成天线14的末端15的导体线路13形成平坦接面19的另一种可能性也被描述。其中在天线基板12上形成凹陷40的同时也可一并形成平坦接面38，凹陷40可用于容置芯片21(如图7所示出)。
根据本实施所示出的另一实施情况，旋转铣削刀具41可朝着设置于天线基板12天线侧11的导体线路13从天线基板12的背侧26被引导。在此过程中，凹陷40的底部42形成于天线基板内12，且平坦接面38与其接触表面43为齐平设置。
如图5a以及图5b的描述，芯片21与设置于天线基板12天线14的接触可通过将芯片21嵌入天线基板12的背侧26的凹陷40处完成，且在同一时间，芯片21也可透过设置其的末端接点22的接触凸块24与平坦接面38互相接触。

Claims (12)

1.一种转频层(10)，用于制造芯片卡，其特征在于，包括：
天线基板(12)，该天线基板装备由导体线路(13)形成的天线(14)在该天线基板的天线侧(11)，该天线基板具有芯片容置空间形成于该天线基板内的凹部且该芯片容置空间用于容置芯片(21)，其中作为该天线末端(15)的导体线路末端形成在该天线基板的该芯片容置空间的底部(20)，该底部相对于该天线基板(12)的背侧(26)凹入，设置在该芯片的接触侧(36)上的末端接点(22)与该天线的该末端(15)的平坦接面(19)互相接触，以使该芯片容置在该芯片容置空间，且该芯片以其本身的半导体主体(28)的背侧(27)面对该末端接点以实质上与该天线基板的该背侧齐平。
2.根据权利要求1所述的转频层，其特征在于，该芯片容置空间形成为在该天线基板(12)内的窗孔(17)内，该末端(15)的该平坦接面(19)形成该芯片容置空间的该底部(20)。
3.根据权利要求1所述的转频层，其特征在于，该芯片容置空间形成为在该天线基板(12)内的凹陷(40)且该芯片容置空间具有由该天线基板(12)形成的底部(42)，其中，该末端(15)的该平坦接(38)设置于该芯片容置空间的该底部(42)。
4.一种卡片内嵌层(29)，其具有根据前述权利要求中任一项所述的转频层(10)，其特征在于，该转频层为设置在具有多个覆盖层的复合层的下覆盖层(30)与上覆盖层(31)之间的中间层，其中，该下覆盖层设置于该天线基板(12)的该天线侧(11)且该上覆盖层同时设置于该天线基板(12)的该背侧(26)以及该芯片(21)的该半导体主体(28)的该背侧(27)。
5.一种芯片卡，其具有根据权利要求4所述的卡片内嵌层，其特征在于，该芯片卡的下外层通过该卡片内嵌层(29)的该下覆盖层(30)形成，且该芯片卡的上外层通过该卡片内嵌层的该上覆盖层(31)形成。
6.一种芯片卡，其具有根据权利要求4所述的卡片内嵌层，其特征在于，该芯片卡的下外层设置于该卡片内嵌层的该下覆盖层上，且该芯片卡的上外层设置于该卡片内嵌层的该上覆盖层上。
7.一种制造根据权利要求1至3中任一项所述的转频层(10)的方法，其特征在于：
设置有由该导体线路(13)形成的该天线(14)在该天线侧(11)的天线基板(12)，该天线基板在形成于该天线基板内的该芯片容置空间的区域接收来自该天线基板的该背侧(26)的能量，该芯片容置空间的区域位于该底部(20,42)上，通过该导体线路所形成的该天线的该末端(15)朝向该天线基板的该背侧的该平坦接面(19,38)而延伸形成，
且接着，设置在该芯片(21)的该接触侧(36)上的该平坦接面与该芯片的该末端接点的接触通过该芯片被容置在该天线基板中且该芯片以其本身的该半导体主体的该背侧面(27)对该末端接点以实质上与该天线基板的该背侧齐平。
8.根据权利要求7所述的方法，其特征在于，透过形成该天线(14)的该末端(15)的该导体线路(13)的重制工艺，以形成该平坦接面(19)。
9.根据权利要求7所述的方法，其特征在于，透过形成该天线(14)的该末端(15)的该导体线路(13)的机械加工工艺，以形成该平坦接面(38)。
10.根据权利要求7所述的方法，其特征在于，透过形成该天线的该末端的该导体线路激光处理方法，以形成该平坦接面。
11.根据权利要求7至10中任一项所述的方法，其特征在于，透过施加压力与温度于形成该天线(14)的该末端(15)的该导体线路(13)，以使具有多个金属接触凸块(24)的该芯片(21)上的该末端接点(22)与该平坦接面(19,38)互相接触。
12.根据权利要求7至10中任一项所述的方法，其特征在于，通过施加压力于形成该天线的该末端的该导体线路，以使通过导电胶而具有多个接触凸块的该芯片上的该末端接点与该平坦接面互相接触。
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