TWI618203B - 具有積體在線圈中心中之晶片的無線充電封裝件 - Google Patents

具有積體在線圈中心中之晶片的無線充電封裝件 Download PDF

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TWI618203B
TWI618203B TW105140434A TW105140434A TWI618203B TW I618203 B TWI618203 B TW I618203B TW 105140434 A TW105140434 A TW 105140434A TW 105140434 A TW105140434 A TW 105140434A TW I618203 B TWI618203 B TW I618203B
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Taiwan
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coil
package
device die
encapsulating material
die
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TW105140434A
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TW201727845A (zh
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朱強瑞
余振華
劉重希
蔡豪益
曾明鴻
郭鴻毅
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台灣積體電路製造股份有限公司
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Abstract

一種封裝件，其包括一裝置晶粒；以及一囊封材料，囊封該裝置晶粒於其中。該囊封材料具有一頂部表面，與該裝置晶粒的一頂部表面共平面。一線圈係自該囊封材料的該頂部表面延伸至該囊封材料的一底部表面，以及該裝置晶粒係在該線圈所圈繞的區中。至少一個介電層係形成在該囊封材料以及該線圈上方。複數個重佈線係在該至少一個介電層中。該線圈係透過該等重佈線電耦合至該裝置晶粒。

Description

具有積體在線圈中心中之晶片的無線充電封裝件
本揭露係關於一種封裝件及方法。
無線充電已變成日益流行的充電技術。無線充電有時也稱作感應式充電，其使用電磁場來傳送在能量傳送器與能量接收器之間的能量。該能量係透過感應式耦合送至電氣裝置，該裝置接著可使用該能量來將電池充電或使該裝置運作。感應充電器係使用第一感應線圈，以從該傳送器創造交流電磁場；以及第二感應線圈，以從該電磁場接收電力。第二感應線圈將能量轉換回電流，該電流接著被用來將電池充電或直接驅動電氣裝置。當彼此靠近時，這兩個感應線圈形成電力變壓器。
根據本揭露的一些實施例，一種封裝件係包括一裝置晶粒；以及一囊封材料，囊封該裝置晶粒於其中。該囊封材料具有一頂部表面，與該裝置晶粒的一頂部表面共平面。一線圈係自該囊封材料的該頂部表面延伸至該囊封材料的一底部表面，以及該裝置晶粒係在該線圈所圈繞的區中。至少一個介電層係形成在該囊封材料以及該線圈上方。複數個重佈線係在該至少一個介電層中。該線圈係透過該等重佈線電耦合至該裝置晶粒。 根據本揭露的一些實施例，一種封裝件係包括一線圈，延伸至靠近該封裝件的所有邊緣；一裝置晶粒，在該線圈內部；一囊封材料，囊封該裝置晶粒以及該線圈於其中；至少一個介電層，在該囊封材料以及該線圈上方；以及複數個重佈線，在該至少一個介電層中。該等重佈線係電耦合至該線圈以及該裝置晶粒。 根據本揭露的一些實施例，一種方法係包括形成一線圈在一載體上方；以及將一裝置晶粒放在該載體上方，其中該裝置晶粒係在該線圈所圈繞的一區中。該方法進一步包括囊封該裝置晶粒以及該線圈在一囊封材料中；與該囊封材料的一頂部表面一起平坦化該第一裝置晶粒的一頂部表面以及該線圈的一頂端；形成至少一個介電層在該囊封材料、該線圈、以及該第一裝置晶粒上方；以及形成複數個重佈線在該至少一個介電層中。該等重佈線係電耦合至該第一裝置晶粒以及該線圈。
下列揭露提供許多用於實施本發明之不同特徵的不同實施例、或實例。為了簡化本揭露，於下描述組件及配置的具體實例。當然這些僅為實例而非意圖為限制性。例如，在下面說明中，形成第一特徵在第二特徵上方或上可包括其中第一及第二特徵係經形成為直接接觸之實施例，以及也可包括其中額外特徵可形成在第一與第二特徵之間而使得第一及第二特徵不可直接接觸之實施例。此外，本揭露可重複參考編號及/或字母於各種實例中。此重複係為了簡單與清楚之目的且其本身並不決定所討論的各種實施例及/或構形之間的關係。 再者，空間相關詞彙，諸如“下方”、“下面”、“下”、“上方”、“上”和類似詞彙，可能是為了使說明書便於描述如圖式繪示的一個元件或特徵與另一個（或多個）元件或特徵的相對關係而使用於本文中。除了圖式中所畫的方位外，這些空間相對詞彙也意圖用來涵蓋裝置在使用中或操作時的不同方位。該設備可以其他方式定向(旋轉90度或於其它方位)，據此在本文中所使用的這些空間相關說明符可以類似方式加以解釋。 係根據各種例示性實施例提供一種用於無線充電的封裝件，其包括交流電-直流電(alternating current-direct current，AC-DC)轉換器電路晶片及/或藍芽電路晶片。係繪示形成該封裝件的中間階段。對一些實施例的一些變化做出討論。遍及各種視圖及說明性實施例，類似的參考編號係用於表示類似的元件。 圖1至14係根據本揭露說明一些實施例繪示在一些封裝件的形成中之中間階段的剖面圖。顯示於圖1至14中之步驟也示意性地繪示在圖16中所顯示的製程流程圖200中。 圖1繪示載體20以及形成在載體20上方的離型層22。載體20可以是玻璃載體、陶瓷載體、或類似物。載體20可具有圓形俯視形狀，且可具有矽晶圓大小。例如，載體20可具有8英吋直徑、12英吋直徑、或類似者。離型層22可由聚合物系材料(諸如光熱轉換(light to heat conversion，LTHC)材料)所形成，其可連同載體20自將於後續步驟中形成的上方結構移除。根據本揭露的一些實施例，離型層22係由環氧系熱離型材料所形成。根據本揭露的一些實施例，離型層22係由紫外光(ultra-violet，UV)膠所形成。離型層22可呈液體分注並固化。根據本揭露的替代性實施例，離型層22係層壓膜且係層壓至載體20上。離型層22的頂部表面係整平且具有高度共平面性。 根據本揭露的一些實施例，介電層24係形成在離型層22上方。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟202。在最終產品中，介電層24可用來作為鈍化層，以將上方金屬構件與溼氣及其他有害物質的不利效果隔離。介電層24可由聚合物所形成，該聚合物也可以是光敏材料諸如聚苯并噁唑(polybenzoxazole，PBO)、聚醯亞胺、苯并環丁烯(benzocyclobutene，BCB)、或類似物。根據本揭露的替代性實施例，介電層24係由無機材料(等)所形成，該材料可以是氮化物諸如氮化矽、氧化物諸如氧化矽、磷矽酸鹽玻璃(PhosphoSilicate Glass，PSG)、硼矽酸鹽玻璃(BoroSilicate Glass，BSG)、硼摻雜磷矽酸鹽玻璃(Boron-doped PhosphoSilicate Glass，BPSG)、或類似物。根據本揭露的又些替代性實施例，沒有介電層24被形成。據此，介電層24係以虛線顯示，以表明其可形成或可不形成。 圖2以及3繪示導電部件32之形成，由於它們穿透過將在後續步驟中分注之囊封材料52(圖6)，故下文中將導電部件32稱作貫穿導體。參考圖2，晶種層26係例如透過物理氣相沉積(Physical Vapor Deposition，PVD)或金屬箔層壓而形成在介電層24上方。晶種層26可由銅、鋁、鈦、或其之多層所形成。根據本揭露的一些實施例，晶種層26包括鈦層(未分開顯示)以及在鈦層上方的銅層(未分開顯示)。根據替代性實施例，晶種層26包括單一銅層。 光阻28被施加在晶種層26上方且接著被圖案化。相應步驟也顯示成圖16中所顯示之製程流程圖的步驟202。因此，開口30係藉由曝光以及顯影步驟形成在光阻28中。晶種層26的一些部分係透過貫穿開口30暴露出。 根據本揭露的一些實施例，開口30係用來形成線圈33(圖15)，線圈33可被用作為接收器，以於無線充電中接收能量。為了改善接收能量的效率，開口30的節距P1被盡可能小地設計且實現。例如，根據本申請案的一些實施例，節距P1係小於約300微米(µm)。如圖15所顯示，線圈33具有四邊，各係非常長(與其寬度相比)。再者，如圖13所顯示，組合形成如圖15所顯示之線圈33的導體32係具有高長寬比。據此，難以形成長、窄且低節距之線圈。根據本申請案的一些實施例，係根據線圈33的設計，諸如形狀、大小、高度(如圖13中的剖面圖)，以及被線圈33所圈繞之區的大小以及形狀而選擇光阻28。找出適當光阻材料的例示性方法包括判斷複數個候選光阻材料的解析度、使用矩陣評估以判斷候選光阻材料的解析度、從具有所欲解析度之候選光阻材料中找出適宜光阻、以及接著實施實驗以測試所選光阻中的哪一個可符合設計要求。然而，應意識到，適當光阻材料的種類係關於各種所討論的因子，以及適合於一種設計的光阻可能不適合於另一種設計。 回頭參考圖1，因為具有光阻28係由適當材料所形成，開口30的節距P1可夠低，因此用於吸收能量的線圈33的整體效率可夠高以符合設計要求。根據本揭露的一些實施例，開口30具有寬度W1係小於約300 µm，以及在相鄰開口30之間的間距S1也可以是小於約300 µm。據此，節距P1可以是小於約600 µm。 接下來，如也在圖2中所顯示者，貫穿導體32係透過鍍覆製程形成在開口30中，該鍍覆製程可以是電鍍或無電式電鍍。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟204。貫穿導體32係鍍覆在晶種層26之暴露的部分上。貫穿導體32可包括銅、鋁、鎢、鎳或其合金。貫穿導體32的俯視形狀包括但不限於螺旋、環、長方形、正方形、圓形、及類似物，這取決於貫穿導體32的意欲功能以及可用空間。根據各種實施例，貫穿導體32的高度係由後續所放之積體電路晶片(裝置晶粒)38(圖5，包括38A與38B)的厚度判定，具有貫穿導體32的高度大於或等於裝置晶粒38的厚度。 在貫穿導體32之鍍覆製程之後，光阻28被移除，且所得結構顯示在圖3中。暴露出先前被光阻28所覆蓋之晶種層26的部分(圖2)。接著實施蝕刻步驟，以移除晶種層26之暴露的部分，其中該蝕刻可以是非等向性或等向性蝕刻。另一方面，被貫穿導體32所重疊之晶種層26的部分維持未被蝕刻。在整個說明書中，晶種層26之留下的下方部分被視作貫穿導體32的底部部分。當晶種層26係由相似於或相同於相應之上方貫穿導體32所具者之材料形成時，晶種層26可與貫穿導體32融合而在其等之間沒有可區分介面。據此，晶種層26未顯示在後續圖式中。根據本揭露的替代性實施例，在晶種層26與貫穿導體32的上方經鍍覆部分之間存在有可區分介面。 貫穿導體32的俯視形狀係關於它們的意欲功能且由它們的意欲功能判定。根據一些其中使用貫穿導體32形成電感之例示性實施例，所繪示之貫穿導體32可以是線圈33的部件。圖15係根據一些實施例繪示例示性電感之俯視圖。在圖15中，貫穿導體32組合形成螺旋，以兩個端口34連接至該螺旋的相對端。根據替代性實施例(未顯示)，貫穿導體32形成複數個同心環，以外環圈繞內環。該等環具有中斷以允許外環透過橋連接至內環，且該等環係串聯連接至兩個端口34。端口34也連接至半導體晶片38A。 圖4繪示置放裝置晶粒38(包括38A以及38B)在載體20上方。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟206。裝置晶粒38可透過晶粒附接膜(Die-Attach Film，DAF)40黏附至介電層24，DAF係黏著劑膜。根據本揭露的一些實施例，裝置晶粒38包括AC-DC轉換器晶片38A，其具有接收來自線圈33之AC電流以及轉換AC電流成DC電流的功能。DC電流用以將電池(未顯示)充電、或驅動封裝件係位於其中之相應產品的電路，該封裝件係包括線圈33。 裝置晶粒38也可包括通訊晶粒38B，其可以是藍芽低能量(Bluetooth Low-Energy，BLE)晶粒。BLE晶粒38B可具有與傳送器(未顯示)通訊之功能，此係透過例如藍芽技術。傳送器以及BLE晶粒38B可協商能量的傳送，例如，當傳送器與線圈33之間的距離足夠小時、及/或當電池中所儲存的電力比預定的閾值位準低時。接著傳送器可開始傳送能量，其可以是在高頻，例如在約6.78兆赫(MHz)之磁場形式。線圈33接收該能量並饋送相應電流至AC-DC轉換器晶片38A。 根據本揭露的一些實施例，封裝件的形成係在晶圓級。據此，複數個線圈33係同時形成，各圈繞一內部區。複數個裝置晶粒38被放在載體20上。例如，線圈33之各者圍繞一個裝置晶粒38A以及一個裝置晶粒38B於其中。該等線圈33以及裝置晶粒38被分配成具有複數個列及行的陣列。 裝置晶粒38可分別包括半導體基板42A以及42B，其可以是矽基板。積體電路裝置44A以及44B係分別形成在半導體基板42A以及42B上。積體電路裝置44A以及44B包括主動裝置諸如電晶體及二極體，以及可包括或可不包括被動裝置諸如電阻、電容器、電感、或類似物。裝置晶粒38可包括電耦合至相應積體電路裝置44A以及44B之金屬柱46。金屬柱46可包埋在介電層48中，例如介電層48可以是由PBO、聚醯亞胺、或BCB所形成。也繪示鈍化層50，其中金屬柱46可延伸至鈍化層50中。鈍化層50可由氮化矽、氧化矽、或其之多層所形成。 接下來，參考圖5，囊封材料52係囊封(有時稱作成型)在裝置晶粒38上。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟208。囊封材料52填充相鄰貫穿導體32之間的間隙以及貫穿導體32與裝置晶粒38之間的間隙。囊封材料52可包括聚合物系材料，且可包括模塑料、模塑底膠填充、環氧化物、及/或樹脂。囊封材料52的頂部表面高於金屬柱46的頂端。 在後續步驟中，如圖6所顯示，實施平坦化製程諸如化學機械拋光(Chemical Mechanical Polish, CMP)製程或研磨製程，以減少囊封材料52的頂部表面，直到暴露出貫穿導體32及金屬柱46。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟210。由於平坦化，貫穿導體32的頂端係實質上與金屬柱46的頂部表面齊平(共平面)，且係實質上與囊封材料52的頂部表面共平面。 根據本揭露的一些實施例，裝置晶粒38係包埋在囊封材料52中，如圖6所顯示。在如圖5中所顯示之囊封步驟之前，被動裝置56(標作56A)也可被放在載體20上。相應被動裝置56係顯示於圖14中，其也繪示更多在後續步驟中形成之特徵。被動裝置56A可以是電容器、電阻、電感及/或類似物。被動裝置56A的表面導電部件46也在平坦化步驟中暴露，如圖6中所顯示。據此，被動裝置56A透過後續形成之重佈線(Redistribution Line，RDL)電耦合至其他裝置。被動裝置56A可以是積體被動裝置(Integrated Passive Device，IPD)，其係形成在相應晶片中的半導體基板上。在整篇說明書中，IPD可以是單一裝置晶片，其可包括單一被動裝置，諸如電感、電容器、電阻、或類似物，沒有其他被動裝置以及主動裝置在相應晶片中。再者，根據一些實施例，沒有主動裝置，諸如電晶體以及二極體在IPD 56A中。 根據替代性實施例，沒有被動裝置被囊封在囊封材料52中。據此，在圖14中，使用虛線繪示被動裝置56A，以表示被動裝置可被或可不被包埋在囊封材料52中。 圖7至11繪示正面重佈線及相應介電層的形成。參考圖7，係形成介電層54。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟212。根據本揭露的一些實施例，介電層54是由聚合物諸如PBO、聚醯亞胺、或類似物所形成。根據本揭露的替代性實施例，介電層54是由無機材料諸如氮化矽、氧化矽、或類似物所形成。開口57係形成在介電層54中(例如，透過曝光及顯影)，以暴露出貫穿導體32及金屬柱46。開口57可透過光微影製程形成。 接下來，參考圖8，形成重佈線(RDL)58以連接金屬柱46及貫穿導體32。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟214。RDL 58也可互連金屬柱46與貫穿導體32。此外，RDL 58可用來形成用以將電感33的端口34(圖15)連接至裝置晶粒38A的連接。RDL 58包括在介電層54上方之金屬跡線(金屬線)以及延伸至介電層54中之通路。在RDL 58中之通路係連接至貫穿導體32及金屬柱46。根據本揭露的一些實施例，RDL 58之形成包括形成整片銅晶種層、形成及圖案化遮罩層在整片銅晶種層上方、實施鍍覆製程以形成RDL 58、移除遮罩層、以及蝕刻不被RDL 58所覆蓋之整片銅晶種層的部分。RDL 58可由金屬或金屬合金，包括鋁、銅、鎢、及/或其合金所形成。 參考圖9，根據本揭露的一些實施例，介電層60係形成在圖8所顯示之結構上方，接著係形成開口62在介電層60中。RDL 58的一些部分因此被暴露出。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟216。可使用選自用於形成介電層54之相同候選材料之材料來形成介電層60。 接下來，如圖10所顯示，RDL 64係形成在介電層60中。相應步驟也顯示成圖16中所顯示之製程流程圖的步驟216。根據本揭露的一些實施例，RDL 64之形成包括形成整片銅晶種層、形成及圖案化遮罩層在整片銅晶種層上方、實施鍍覆製程以形成RDL 64、移除遮罩層、以及蝕刻不被RDL 64所覆蓋之整片銅晶種層的部分。RDL 64也可由金屬或金屬合金，包括鋁、銅、鎢、及/或其合金所形成。可以理解的是，雖然在繪示之例示性實施例中形成兩層RDL(58及64)，但可具有任何數目的RDL層，諸如一層或多於兩層。該等RDL之組合可將貫穿導體32、裝置晶粒38、被動裝置56、以及類似物電互連。 圖11及12係根據一些例示性實施例繪示介電層66及電連接件68之形成。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟218。參考圖11，介電層66係使用例如PBO、聚醯亞胺、或BCB形成。開口59係形成在介電層66中，以暴露出下方金屬墊，其係RDL 64之部件。根據一些實施例，凸塊下金屬(Under-Bump Metallurgy, UBM，未顯示)經形成為延伸至在介電層66中之開口59中。 接著形成電連接件68，如圖12所顯示。電連接件68之形成可包括將焊球放在UBM之暴露的部分上，以及接著回銲焊球。根據本揭露的替代性實施例，電連接件68之形成係包括實施鍍覆步驟以形成焊料區在RDL 64中之暴露的金屬墊上方，以及接著回銲焊料區。電連接件68也可包括金屬柱、或金屬柱與焊料帽，其也可透過鍍覆製程形成。在整個說明書中，包括介電層24以及組合之上方結構的結構被稱作封裝件100，其係包括複數個裝置晶粒38之複合晶圓。 接下來，封裝件100係自載體20去接合，例如藉由投射UV光或雷射束在離型層22上，而使得離型層22在UV光或雷射束的熱下分解。封裝件100係因此自載體20去接合。所得封裝件100係顯示於圖13中。根據本揭露的一些實施例，在所得封裝件100中，介電層24留下作為封裝件100的底部部件，並保護貫穿導體32。介電層24可以是整層，其中沒有貫穿開口。根據替代性實施例，不形成介電層24，且在去接合之後，囊封材料52的底部表面及貫穿導體32的底部表面被暴露。可實施(或可不實施)背面研磨以移除DAF 40(若有使用它們)，而使得貫穿導體32的底部表面係與裝置晶粒38A以及38B的底部表面共平面。裝置晶粒38A以及38B的底部表面也可以是半導體基板42A以及42B的底部表面。 圖14繪示將被動裝置56B接合至封裝件100。相應步驟係顯示成圖16中所顯示之製程流程圖的步驟220。在圖14中，被動裝置56B與裝置晶粒38A以及38B重疊。一些被動裝置56B也可與被動裝置56A重疊。被動裝置56B也稱作表面安裝裝置，這是因為它們安裝在封裝件100的頂部表面上。被動裝置56B可以是電容器、電阻、電感及/或類似物。被動裝置56B可以是形成在半導體基板上的IPD。再者，根據一些實施例，沒有主動裝置，諸如電晶體以及二極體在被動裝置56B中。根據一些實施例，被包埋被動裝置56A、表面安裝被動裝置56、或二者係採用在封裝件100中。據此，使用虛線顯示被動裝置56A以及56B，以表示它們可被或不被形成。將被動裝置56A包埋或將被動裝置56B接合在RDL的頂部係具有它們自己的有利特徵。例如，當採用被動裝置56A且沒有接合被動裝置56B時，可減少封裝件100的總厚度。換言之，接合被動裝置56B可減少封裝件100的面積。據此，經包埋被動裝置56A、表面安裝被動裝置56B、或二者被採用在封裝件100中，以適配不同設計要求。被動裝置56A以及56B可透過RDL 64以及58電耦合裝置晶粒38A及/或38B。 根據本揭露的一些實施例，接著封裝件100被單粒化且封裝件100被鋸成複數個彼此完全相同之封裝件100’。圖15繪示例示性封裝件100’的俯視圖。根據一些例示性實施例，封裝件100’包括四個邊緣100A。圖13中所顯示之剖面圖係自含有圖15中線13-13 的平面獲得。圖14中所顯示之剖面圖係自含有圖15中線14-14的平面獲得。電感33具有靠近相應邊緣100A的四個面。再者，不可有位在電感33以及邊緣100A之間之任何裝置。電感33的端口34係透過RDL 58/64連接至裝置晶粒38A。裝置晶粒38A以及38B被線圈33(以及相應之貫穿導體32)所圍繞，其中沒有裝置晶粒且沒有被動裝置是在線圈33的外部，因此最小化封裝件100’的面積。被動裝置56(包括56A及/或56B)也被電感33所圍繞(在封裝件100’的俯視圖中)。參考圖15，根據一些實施例，線圈33的長度L1(其係該等同心環的最長長度)係在約封裝件100’的長度L2(其也是囊封材料52的長度)的50%與約99%之間的之範圍。該等同心環的最短長度L3係長度L2的約30%至約70%。線圈33所占面積(包括被線圈33所環繞的中心面積)可在封裝件100’之俯視面積的約25%以及約98%。寬度W1/H1之比值(圖14)可在約0.4與約1.5之間的範圍。 圖14也繪示形成在介電層54、60、以及66中之密封環70。密封環70係在RDL 58以及64形成之同時形成。在封裝件100’的俯視圖中，密封環70圍繞線圈33，且形成在線圈33與封裝件100’的相應邊緣之間(圖15，其中密封環70係未顯示)。密封環70可以是電性接地或電性浮接。 圖17繪示圖15中之封裝件100’的部分72的放大圖，其中繪示兩個貫穿導體32作為實例。為減少應力，貫穿導體32可具有圓角。例如，貫穿導體的半徑R1可在約W1/2與2W1/3之間的範圍。 根據一些實施例，為增進效率，線圈33的外環可具有大於或等於內環之寬度的寬度。例如，參考圖15，寬度W1A(其可能事最外環的寬度，可等於或大於最內環的寬度W1B。比值W1B/W1A可在約1/2與約2/3之間的範圍。再者，從外環往內環，貫穿導體32的寬度可以是越來越少或每幾環週期性地減少。 圖18係根據一些實施例繪示包括雙線線圈33之封裝件100’。為了更清楚之視圖，未於圖18中繪示將線圈33之該等端連接至裝置晶粒38A的RDL 58以及64(圖15)。圖18中之結構係基本上與圖15中所顯示者相同，除了替代於具有單一貫穿導體32捲起，線圈33係具有平行之兩個貫穿導體32A以及32B捲起。貫穿導體 32A以及32B彼此平行，且如同單一導體組合使用，以形成線圈。為了區分貫穿導體32A與32B，所以可清楚地看見它們配置，使用不同圖案顯示貫穿導體32A以及32B。 如圖18中所顯示，貫穿導體32A以及32B之各者藉其本身形成線圈。貫穿導體32A以及32B的該等端係透過導體74A以及74B互連。連接件74A以及74B之各者可以是當貫穿導體32A以及32B形成時同時形成的貫穿通路、或可以是RDL 58以及64的一部份。連接件74A以及74B也可包括貫穿導體部分與RDL部分二者。根據一些實施例貫穿導體32A以及32B僅在它們的端而不是在中間連接，如圖18中所顯示。根據替代性實施例，相似於連接件74A以及74B之額外連接件可週期地形成，以將貫穿導體32A的中間部分互連至貫穿導體32A的相應部分。例如，貫穿導體32A以及32B的各直線部分可包括一或多個互連件。 貫穿導體32A與32B互連的結果是貫穿導體32A與32B組合形成線圈。當圖18中之線圈33在高頻操作時，例如數兆赫或更高，其具有與如圖15中所顯示之主體線圈33可相比擬，且有時較如圖15中所顯示之主體線圈33來得佳之性能。此可能是因表層效果所致。再者，具有與塊線圈相比較窄的貫穿導體32A與32B，因為它等同於移除如圖15中所顯示貫穿導體32的中間部分，在貫穿導體32A和32B的鍍覆製程中圖案負載效果被減少。 本揭露的實施例具有一些有利特徵。藉由包埋(主動)裝置晶粒以及包埋及/或接合被動裝置(晶粒)在電感所圈繞的區中，無線充電器的面積被減少。應意識到，傳統上，裝置晶粒以及被動裝置不能被放在電感內部，因為這會造成電力接收效率損失到不可接受的水準。根據本揭露的一些實施例，藉由減少電感33的節距，若改善接收效率，其會彌補因將裝置晶粒或被動裝置放在電感所圈繞的區中所造成的效率損失。接收效率因此增加到可接受水準。 根據本揭露的一些實施例，一種封裝件係包括一裝置晶粒；以及一囊封材料，囊封該裝置晶粒於其中。該囊封材料具有一頂部表面，與該裝置晶粒的一頂部表面共平面。一線圈係自該囊封材料的該頂部表面延伸至該囊封材料的一底部表面，以及該裝置晶粒係在該線圈所圈繞的區中。至少一個介電層係形成在該囊封材料以及該線圈上方。複數個重佈線係在該至少一個介電層中。該線圈係透過該等重佈線電耦合至該裝置晶粒。 根據本揭露的一些實施例，一種封裝件係包括一線圈，延伸至靠近該封裝件的所有邊緣；一裝置晶粒，在該線圈內部；一囊封材料，囊封該裝置晶粒以及該線圈於其中；至少一個介電層，在該囊封材料以及該線圈上方；以及複數個重佈線，在該至少一個介電層中。該等重佈線係電耦合至該線圈以及該裝置晶粒。 根據本揭露的一些實施例，一種方法係包括形成一線圈在一載體上方；以及將一裝置晶粒放在該載體上方，其中該裝置晶粒係在該線圈所圈繞的一區中。該方法進一步包括囊封該裝置晶粒以及該線圈在一囊封材料中；與該囊封材料的一頂部表面一起平坦化該第一裝置晶粒的一頂部表面以及該線圈的一頂端；形成至少一個介電層在該囊封材料、該線圈、以及該第一裝置晶粒上方；以及形成複數個重佈線在該至少一個介電層中。該等重佈線係電耦合至該第一裝置晶粒以及該線圈。 前面列述了數個實施例的特徵以便本技術領域具有通常知識者可更佳地理解本揭露之態樣。本技術領域具有通常知識者應了解它們可輕易地使用本揭露作為用以設計或修改其他製程及結構之基礎以實現本文中所介紹實施例的相同目的及/或達成本文中所介紹實施例的相同優點。本技術領域具有通常知識者也應體認到此等均等構造不會悖離本揭露之精神及範疇，以及它們可在不悖離本揭露之精神及範疇下做出各種改變、取代、或替代。
100、100’‧‧‧封裝件
100A‧‧‧邊緣
13-13、14-14‧‧‧線
200‧‧‧製程流程圖
202、204、206、208、210、212、214、216、 218、220‧‧‧步驟
20‧‧‧載體
22‧‧‧離型層
24、48、54、60、66‧‧‧介電層
26‧‧‧晶種層
28‧‧‧光阻
30‧‧‧貫穿開口/開口
32‧‧‧導電部件/貫穿導體/導體
32A、32B‧‧‧貫穿導體
33‧‧‧線圈/電感/雙線線圈
34‧‧‧端口
38‧‧‧積體電路晶片/裝置晶粒
38A‧‧‧半導體晶片/AC-DC轉換器晶片
38B‧‧‧通訊晶粒/BLE晶粒/裝置晶粒
40‧‧‧晶粒附接膜/DAF
42A、42B‧‧‧半導體基板
44A、44B‧‧‧積體電路裝置
46‧‧‧金屬柱/表面導電部件
50‧‧‧鈍化層
52‧‧‧囊封材料
56A‧‧‧被動裝置
56、56B‧‧‧被動裝置/表面安裝裝置
57、59、62‧‧‧開口
58、64‧‧‧重佈線/RDL
68‧‧‧電連接件
70‧‧‧密封環
72‧‧‧部分
74A、74B‧‧‧連接件
P1‧‧‧節距
W1、W1A、W1B‧‧‧寬度
L1、L2、L3
S1‧‧‧間距
R1‧‧‧半徑
本揭露之態樣將在與隨附圖式一同閱讀下列詳細說明下被最佳理解。請注意，根據業界標準作法，各種特徵未依比例繪製。事實上，為了使討論內容清楚，各種特徵的尺寸可刻意放大或縮小。 圖1至14係根據一些實施例繪示在一些封裝件的形成中之中間階段的剖面圖。 圖15係根據一些實施例繪示封裝件之俯視圖。 圖16係根據一些實施例繪示用於形成封裝件之製程流程圖。 圖17係根據一些實施例繪示線圈的一部份。 圖18係根據一些實施例繪示雙線線圈。
100’‧‧‧封裝件
100A‧‧‧邊緣
13-13、14-14‧‧‧線
32‧‧‧導電部件/貫穿導體/導體
34‧‧‧端口
38A‧‧‧半導體晶片/AC-DC轉換器晶片
56‧‧‧被動裝置/表面安裝裝置
58、64‧‧‧重佈線/RDL

Claims (10)

  1. 一種封裝件，其包含：一第一裝置晶粒；一囊封材料，囊封該第一裝置晶粒於其中，其中該囊封材料具有一頂部表面，與該第一裝置晶粒的一頂部表面共平面；一線圈，自該囊封材料的該頂部表面延伸至該囊封材料的一底部表面，其中該第一裝置晶粒係在該線圈所圈繞的一區中；至少一個介電層，在該囊封材料以及該線圈上方；以及複數個重佈線，在該至少一個介電層中，其中該線圈係透過該等重佈線電耦合至該第一裝置晶粒。
  2. 如請求項1之封裝件，其中該線圈係一雙線線圈，包括兩個平行導體，以及該線圈的相對端被互連。
  3. 如請求項1之封裝件，其進一步包含一積體被動裝置(Integrated Passive Device，IPD)，在該等重佈線上方，其中在該封裝件的一俯視圖中，該IPD被該線圈所圈繞。
  4. 如請求項1之封裝件，其進一步包含一積體被動裝置(Integrated Passive Device，IPD)，在該等重佈線上方，其中在該封裝件的一俯視圖中，該IPD被該線圈所圈繞。
  5. 如請求項1之封裝件，其中該線圈包含複數個貫穿導體，穿透過該囊封材料且彼此互連成一積體線圈。
  6. 一種封裝件，其包含：一線圈，延伸至靠近該封裝件的所有邊緣；一第一裝置晶粒，在該線圈內部；一囊封材料，囊封該第一裝置晶粒以及該線圈於其中；至少一個介電層，在該囊封材料以及該線圈上方；以及複數個重佈線，在該至少一個介電層中，其中該等重佈線電耦合至該線圈以及該第一裝置晶粒。
  7. 如請求項6之封裝件，其中該第一裝置晶粒的一頂部表面、該線圈的一頂端、以及該囊封材料的一頂部表面彼此共平面。
  8. 如請求項6之封裝件，其中該線圈穿透過該囊封材料，以及該封裝件進一步包含一晶粒附接膜，附接至該第一裝置晶粒的一背面，以該晶粒附接膜的一底部表面、該囊封材料的一底部表面、以及該線圈的一底端彼此共平面。
  9. 如請求項6之封裝件，其進一步包含一積體被動裝置，在該等重佈線上方，其中在該封裝件的一俯視圖中，該積體被動裝置被該線圈所圈繞，以及一額外積體被動裝置，囊封在該囊封材料中，其中該額外積體被動裝置被該線圈所圈繞。
  10. 一種形成封裝件之方法，其包含：形成一線圈在一載體上方；將一第一裝置晶粒放在該載體上方，其中該第一裝置晶粒係在該線圈所圈繞的一區中；囊封該第一裝置晶粒以及該線圈在一囊封材料中；與該囊封材料的一頂部表面一起平坦化該第一裝置晶粒的一頂部表面以及該線圈的一頂端；形成至少一個介電層在該囊封材料、該線圈、以及該第一裝置晶粒上方；以及形成複數個重佈線在該至少一個介電層中，其中該等重佈線電耦合至該第一裝置晶粒以及該線圈。
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