TWI609097B - Etching liquid composition for use in a multilayer film containing copper and molybdenum, and a method of manufacturing a substrate using the liquid composition, and a substrate manufactured by the manufacturing method - Google Patents
Etching liquid composition for use in a multilayer film containing copper and molybdenum, and a method of manufacturing a substrate using the liquid composition, and a substrate manufactured by the manufacturing method Download PDFInfo
- Publication number
- TWI609097B TWI609097B TW103114303A TW103114303A TWI609097B TW I609097 B TWI609097 B TW I609097B TW 103114303 A TW103114303 A TW 103114303A TW 103114303 A TW103114303 A TW 103114303A TW I609097 B TWI609097 B TW I609097B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- molybdenum
- liquid composition
- main component
- multilayer film
- Prior art date
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims description 237
- 229910052750 molybdenum Inorganic materials 0.000 title claims description 229
- 239000011733 molybdenum Substances 0.000 title claims description 227
- 229910052802 copper Inorganic materials 0.000 title claims description 192
- 239000010949 copper Substances 0.000 title claims description 192
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 190
- 238000005530 etching Methods 0.000 title claims description 156
- 239000000203 mixture Substances 0.000 title claims description 147
- 239000007788 liquid Substances 0.000 title claims description 144
- 239000000758 substrate Substances 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- -1 maleic acid ion Chemical class 0.000 claims description 73
- 150000001875 compounds Chemical class 0.000 claims description 71
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 32
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 31
- 229910001431 copper ion Inorganic materials 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000011976 maleic acid Substances 0.000 claims description 22
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 21
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 12
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 10
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 8
- ASUDFOJKTJLAIK-UHFFFAOYSA-N 2-methoxyethanamine Chemical compound COCCN ASUDFOJKTJLAIK-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 7
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 7
- 150000004032 porphyrins Chemical class 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 6
- 239000005750 Copper hydroxide Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910001956 copper hydroxide Inorganic materials 0.000 claims description 6
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 5
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 claims description 5
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 5
- FAXDZWQIWUSWJH-UHFFFAOYSA-N 3-methoxypropan-1-amine Chemical compound COCCCN FAXDZWQIWUSWJH-UHFFFAOYSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 5
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 5
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 5
- 239000004310 lactic acid Substances 0.000 claims description 5
- 235000014655 lactic acid Nutrition 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- NCXUNZWLEYGQAH-UHFFFAOYSA-N 1-(dimethylamino)propan-2-ol Chemical compound CC(O)CN(C)C NCXUNZWLEYGQAH-UHFFFAOYSA-N 0.000 claims description 4
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 claims description 4
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 4
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 4
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 4
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 description 149
- 239000011521 glass Substances 0.000 description 26
- 238000011282 treatment Methods 0.000 description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 230000000052 comparative effect Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 229910021529 ammonia Inorganic materials 0.000 description 12
- 238000011156 evaluation Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 238000001000 micrograph Methods 0.000 description 9
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 239000003002 pH adjusting agent Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 235000011054 acetic acid Nutrition 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 5
- 239000011609 ammonium molybdate Substances 0.000 description 5
- 235000018660 ammonium molybdate Nutrition 0.000 description 5
- 229940010552 ammonium molybdate Drugs 0.000 description 5
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 235000015165 citric acid Nutrition 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000001630 malic acid Substances 0.000 description 3
- 235000011090 malic acid Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- BWLBGMIXKSTLSX-UHFFFAOYSA-N 2-hydroxyisobutyric acid Chemical compound CC(C)(O)C(O)=O BWLBGMIXKSTLSX-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 235000007686 potassium Nutrition 0.000 description 2
- 235000019260 propionic acid Nutrition 0.000 description 2
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000011684 sodium molybdate Substances 0.000 description 2
- 235000015393 sodium molybdate Nutrition 0.000 description 2
- TVXXNOYZHKPKGW-UHFFFAOYSA-N sodium molybdate (anhydrous) Chemical compound [Na+].[Na+].[O-][Mo]([O-])(=O)=O TVXXNOYZHKPKGW-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MADORZDTLHDDEN-UHFFFAOYSA-N 1-piperidin-1-ylethanol Chemical compound CC(O)N1CCCCC1 MADORZDTLHDDEN-UHFFFAOYSA-N 0.000 description 1
- 229940044613 1-propanol Drugs 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- PUZDJVHACWSZFE-UHFFFAOYSA-N 2-(21,23-dihydro-2H-porphyrin-1-yl)ethanol Chemical compound OCCC12CC=C(N1)C=C1C=CC(=N1)C=C1C=CC(N1)=CC=1C=CC(N1)=C2 PUZDJVHACWSZFE-UHFFFAOYSA-N 0.000 description 1
- RXWOHFUULDINMC-UHFFFAOYSA-N 2-(3-nitrothiophen-2-yl)acetic acid Chemical compound OC(=O)CC=1SC=CC=1[N+]([O-])=O RXWOHFUULDINMC-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- DKMROQRQHGEIOW-UHFFFAOYSA-N Diethyl succinate Chemical compound CCOC(=O)CCC(=O)OCC DKMROQRQHGEIOW-UHFFFAOYSA-N 0.000 description 1
- MUXOBHXGJLMRAB-UHFFFAOYSA-N Dimethyl succinate Chemical compound COC(=O)CCC(=O)OC MUXOBHXGJLMRAB-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- YVBOZGOAVJZITM-UHFFFAOYSA-P ammonium phosphomolybdate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[O-]P([O-])=O.[O-][Mo]([O-])(=O)=O YVBOZGOAVJZITM-UHFFFAOYSA-P 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- AWZACWPILWGEQL-UHFFFAOYSA-M azanium;copper(1+);sulfate Chemical compound [NH4+].[Cu+].[O-]S([O-])(=O)=O AWZACWPILWGEQL-UHFFFAOYSA-M 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- IEVWNXLJUKRPPX-UHFFFAOYSA-N bismuth azane Chemical compound N.[Bi+3] IEVWNXLJUKRPPX-UHFFFAOYSA-N 0.000 description 1
- 229940006460 bromide ion Drugs 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
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- 229910000431 copper oxide Inorganic materials 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- BEPAFCGSDWSTEL-UHFFFAOYSA-N dimethyl malonate Chemical compound COC(=O)CC(=O)OC BEPAFCGSDWSTEL-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
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- 238000005342 ion exchange Methods 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
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- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 235000016768 molybdenum Nutrition 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- FHHJDRFHHWUPDG-UHFFFAOYSA-L peroxysulfate(2-) Chemical compound [O-]OS([O-])(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-L 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
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- 229940090181 propyl acetate Drugs 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/4763—Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers
- H01L21/47635—After-treatment of these layers
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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- C23F1/02—Local etching
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
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- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H05K2201/03—Conductive materials
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Description
本發明係關於液體組成物,更詳言之,係關於使用於含有銅及鉬之多層膜之蝕刻的液體組成物、及利用該液體組成物之多層膜配線之製造方法、及所製造之基板。
自以往,一般而言,平面顯示器等顯示裝置的配線材料係使用鋁或鋁合金。但是伴隨顯示器的大型化及高解像度化,如此的鋁系配線材料會發生配線電阻等特性所引起的信號延遲的問題,難以均勻的顯示畫面。
相較於鋁,銅有電阻低的優點,但是,閘配線使用銅的情形,會有玻璃等基板和銅間的密合性不足的問題。又,源‧汲配線使用銅時,會有如下問題:銅向成為其基底之矽半導體膜擴散、或氧從氧化物半導體膜擴散所致銅氧化的情況。
為了解決如上述問題,有人探討,介隔著與玻璃等基板之密合性高、且不易向半導體膜擴散、也兼顧阻隔性的由金屬構成的阻隔膜來設置銅層之多層膜配線。已知兼顧密合性與阻隔性的金屬有鉬或鈦等金屬。作為多層膜配線,係採用將由銅構成之層、和兼具該等密合性與阻隔性之由金屬或此等金屬之合金構成的層予以疊層而成的2層結構的多層膜,或為了防止由銅構成之層氧化,而採用進一步將由鉬或鈦等金屬或此等的合金構成之層疊層於銅層上而成的3層結構的多層膜。
含有銅及鉬之多層膜配線,可藉由利用濺鍍法等成膜處理於玻璃等基板上形成上述多層膜,其次將光阻等作為遮罩而進行蝕刻,以形成電極圖案而得。
蝕刻方式有使用蝕刻液之濕式法(濕蝕刻)及使用電漿等蝕刻氣體之乾式法(乾蝕刻)。濕式法(濕蝕刻)使用之蝕刻液,要求如下特性,亦即:
‧高加工精度
‧成分安定性及安全性高、操作容易
‧蝕刻性能安定,及
‧蝕刻後能獲得良好的配線形狀等。
一般而言,於銅蝕刻步驟使用之蝕刻液,已知有含過氧化氫及酸之酸性蝕刻液、或是含過氧基硫酸鹽及酸之酸性蝕刻液。但是如此的含過氧化氫或過氧基硫酸之蝕刻液,因為過氧化氫或過氧基硫酸分解,會有產生氣體及熱等的問題。又,因為成分分解,會有造成蝕刻性能改變的問題。
作為不含過氧化物之銅蝕刻液,已知含有銅(II)離子及氨之氨鹼性蝕刻液。可利用如此的氨鹼性蝕刻液來蝕刻含銅之多層膜。但是由於該蝕刻液的pH高,有時該蝕刻液會有氨大量揮發出來,造成氨濃度降低,使得蝕刻速度變動、或是作業環境顯著惡化。又,pH高的話,會有光阻溶解掉的問題。
作為將含有選自於Zn、Sn、Al、In及Ga之金屬之氧化物的金屬氧化物層與銅層的多層膜中的銅層予以選擇性蝕刻的蝕刻液,有人提出含有銅(II)離子、有機酸、及含胺基之化合物,且pH為5.0~10.5之蝕刻液(專利文獻1)。但是未針對含有銅及鉬之多層膜之蝕刻進行探討。又,此蝕刻液雖有銅除去性,但是鉬除去性低(參照比較例3),所以不適於含有銅及鉬之多層膜之蝕刻。
作為銅或銅合金之蝕刻液,有人提出含有銅(II)離子、脂肪族羧酸、鹵素離子、及烷醇胺之蝕刻液(專利文獻2)。
又,作為銅或銅合金之蝕刻液,有人提出含有銅(II)離子、有機酸離子、及馬來酸離子之蝕刻液(專利文獻3)。在此,記載著:該蝕刻液也能適用於含有銅及鉬之多層膜之蝕刻。
另一方面,為了因應近年來顯示器的大型化、高精細化、及低耗電的要求,有人探討使用由銦(In、)、鎵(Ga)及鋅(Zn)構成的氧化物半導體(IGZO)的結構作為成為配線之基底的半導體層。
IGZO作為半導體層的話,為了使可靠性提高,須於高溫實施後退火處理,其結果會有為配線材料的銅氧化,配線電阻增大的問題。所以,為了防止銅氧
化,有人探討於銅上層使用鉬作為表覆金屬的多層結構(例如鉬/銅/鉬之多層膜),但為了防止高溫之後回火處理造成銅氧化,必須使鉬的膜厚為厚。
但是上述鉬的膜厚為厚的含有銅及鉬之多層膜在蝕刻時,會有以下問題:以往的銅/鉬蝕刻液的鉬除去性不足,且上層成為鉬遮蔽而造成鉬殘留,或是下層鉬的拖尾而未清除完全。所以,希望能有即便是鉬的膜厚為厚的含有銅及鉬之多層膜也能以良好蝕刻形狀進行蝕刻的蝕刻液。
【專利文獻1】日本特開2012-129304號公報
【專利文獻2】日本特開2001-200380號公報
【專利文獻3】國際公開第2013-5631號
在如此的狀況下,尋求提供在含有銅及鉬之多層膜之蝕刻使用之液體組成物、及將利用此組成物之含有銅及鉬之多層膜設置於基板上之多層膜配線基板之製造方法。
本案發明人等現在發現:藉由使用含有銅離子供給源、馬來酸離子供給源、及特定胺化合物之液體組成物,能解決上述課題。
本發明如下。
[1]一種液體組成物,其從疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜而得的基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層;包含:(A)馬來酸離子供給源、(B)銅離子供給源、及(C)選自於由1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(乙胺基)乙醇、2-(丁胺基)乙醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、2-甲氧基乙胺、3-甲氧基丙胺、3-胺基-1-丙醇、2-胺基-2-甲基-1-丙醇、1-二甲胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、 啉、及4-(2-羥基乙基) 啉構成之群組中之至少1種胺化合物;且pH值為4~9。
[2]如[1]之液體組成物,其中,該由鉬或含有鉬作為主成分之化合物構成之層之膜厚(鉬膜厚)相對於由銅或含有銅作為主成分之化合物構成之層之膜厚(銅膜厚)(各層為多層的情形,係各自的總膜厚)之比例(鉬膜厚/銅膜厚)為0.05~1。此比例因多層膜配線之用途而異,但為了使鉬或含有鉬作為主成分之層展現作為阻隔膜的效果,通常鉬膜厚/銅膜厚之比例宜為0.01以上,0.05以上更佳,0.1以
上尤佳。另一方面,鉬或含有鉬作為主成分之化合物比起銅或含有銅作為主成分的化合物係較為昂貴的材料,所以考量經濟的觀點,鉬膜厚/銅膜厚之比例宜為2以下,1以下更佳,0.5以下尤佳。
[3]如[1]或[2]之液體組成物,其中,該(A)馬來酸離子供給源係選自於由馬來酸、及馬來酸酐構成之群組中之至少1種。
[4]如[1]至[3]中任一項之液體組成物,其中,該(B)銅離子供給源係選自於由銅、硫酸銅、硝酸銅、乙酸銅、及氫氧化銅構成之群組中之至少1種。
[5]如[1]至[4]中任一項之液體組成物,其中,該(A)馬來酸離子供給源相對於該(B)銅離子供給源之摻合比,以莫耳基準計,為0.1~10。
[6]如[1]至[5]中任一項之液體組成物,其中,該(C)胺化合物相對於該(B)銅離子供給源之摻合比,以莫耳基準計,為2~20。
[7]如[1]至[6]中任一項之液體組成物,係更包含(D)羧酸離子供給源而成。
[8]如[7]之液體組成物,其中,該羧酸離子供給源(D)係選自於由乙酸、甘醇酸、丙二酸、琥珀酸、乳酸、檸檬酸及該等羧酸之鹽、及乙酸酐構成之群組中之至少1種。
[9]如[7]或[8]之液體組成物,其中,該羧酸離子供給源(D)相對於該銅離子供給源(B)之摻合比,以莫耳基準計,為0.1~10。
[10]如[1]至[9]中任一項之液體組成物,係更包含鉬酸離子供給源(E)而成。
[11]如[1]至[10]中任一項之液體組成物,其從在該基板上疊層由銦、鎵、及鋅構成之氧化物層(IGZO)並進一步於其上疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜而得的
基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層。
[12]一種蝕刻方法,係從疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜的基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的方法;包含以下步驟:使如[1]至[11]中任一項之液體組成物接觸該多層膜。
[13]如[12]之蝕刻方法,其中,該多層膜係將由鉬或含有鉬作為主成分之化合物構成之層、與由銅或含有銅作為主成分之化合物構成之層予以疊層而得之二層膜。
[14]如[12]之蝕刻方法,其中,該多層膜係將由鉬或含有鉬作為主成分之化合物構成之層、由銅或含有銅作為主成分之化合物構成之層、及由鉬或含有鉬作為主成分之化合物構成之層依序疊層而得之三層膜。
[15]一種多層膜配線基板之製造方法,係製造在基板上設置有多層膜之多層膜配線基板之方法,該多層膜至少包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層;此方法係:於基板上依序設置由鉬或含有鉬作為主成分之化合物構成之層及由銅或含有銅作為主成分之化合物構成之層而形成多層膜,在該多層膜上被覆光阻而形成光阻膜,將該光阻膜曝光‧顯影而形成既定光阻圖案以藉此形成蝕刻對象物,
使如[1]至[11]中任一項之液體組成物接觸該蝕刻對象物,藉此蝕刻該多層膜而形成多層膜配線。
[16]一種多層膜配線基板,係利用如[15]之多層膜配線基板之製造方法所製得。
依發明之液體組成物,將銅及鉬之多層膜一次且以良好蝕刻速度(依本發明之理想態樣,直到含有銅及鉬之多層膜之蝕刻完成而基底露出為止之適量蝕刻時間為約30~400秒,或蝕刻速度約0.1~1μm/分)進行蝕刻。故能使蝕刻之生產性及控制性良好。
又,本發明之液體組成物不含氨,所以不會有因氨揮發所致臭味,處理容易。又,本發明之液體組成物不含過氧化氫或過氧基硫酸離子,所以因此等之分解反應所致氣體及熱之產生也不顯著,能安全且安定地實施蝕刻。
依本發明之理想態樣,本發明之液體組成物,比起以往的銅/鉬蝕刻液,鉬除去性較高,所以即使是鉬的膜厚為厚的含有銅及鉬之多層膜配線,也不會殘留鉬。再者,不會損傷半導體層IGZO,所以於包含含有銅及鉬之多層膜與IGZO之配線結構,能選擇性地蝕刻銅及鉬。
由以上可以達成因應顯示器大型化、高解像度化及低耗電之含有銅及鉬之多層膜配線蝕刻用液體組成物。
又,依本發明之理想態樣,本發明之液體組成物即使於蝕刻時銅及鉬溶解,蝕刻速度之變化仍少,所以能使用於長期間蝕刻。又,蝕刻時,溶解的銅及鉬
會混入液體組成物但此等混入成分會成為銅離子供給源(B)或鉬酸離子供給源(E),所以藉由將不含(B)成分及(E)成分之各成分(亦即(A)成分、(C)成分、(D)成分及(F)成分)添加到蝕刻中之液體組成物,能重現蝕刻前之液體組成物之組成。其結果能使用於更長期間的蝕刻。
圖1顯示使用本發明之液體組成物蝕刻後由含有銅及鉬之多層膜結構構成之配線剖面之示意圖。
圖2顯示實施例3之蝕刻後之由含有銅及鉬之多層膜結構構成之配線剖面之SEM照片。
圖3顯示實施例3之蝕刻後之由含有銅及鉬之多層膜結構構成之配線表面之SEM照片。
圖4顯示比較例2之蝕刻後之由含有銅及鉬之多層膜結構構成之配線剖面之SEM照片。
圖5顯示比較例2之蝕刻後之由含有銅及鉬之多層膜結構構成之配線表面之SEM照片。
圖6顯示比較例3之蝕刻後之由含有銅及鉬之多層膜結構構成之配線剖面之SEM照片。
圖7顯示實施例9之蝕刻後之由含有銅及鉬之多層膜結構構成之配線剖面之SEM照片。
圖8顯示實施例9之蝕刻後之由含有銅及鉬之多層膜結構構成之配線表面之SEM照片。
圖9顯示實施例16之蝕刻後之由含有銅及鉬之多層膜結構構成之配線剖面之SEM照片。
圖10顯示實施例16之蝕刻後之由含有銅及鉬之多層膜結構構成之配線表面之SEM照片。
<液體組成物>
本發明之液體組成物係使用於含有銅及鉬之多層膜之蝕刻,至少含有(A)馬來酸離子供給源、(B)銅離子供給源、及(C)選自於由1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(乙胺基)乙醇、2-(丁胺基)乙醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、2-甲氧基乙胺、3-甲氧基丙胺、3-胺基-1-丙醇、2-胺基-2-甲基-1-丙醇、1-二甲胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、 啉、及4-(2-羥基乙基) 啉構成之群組中之至少1種胺化合物。
依照本發明,能於含有如此之特定成分之液體組成物中,將由含有銅及鉬之多層膜結構構成之配線一次且以良好蝕刻速度(依本發明之理想態樣,直到含有銅及鉬之多層膜之蝕刻完成而基底露出為止之適量蝕刻時間為約30~400秒,或蝕刻速度約0.1~1μm/分)進行蝕刻。再者,本發明之液體組成物不含氨,故不會有臭味發生或因揮發所致氨濃度改變,操作容易。又,本發明之液體組成物不會因過氧化氫或過氧基硫酸離子之分解反應導致氣體或熱發生,能安全且安
定地實施蝕刻。此外,依本發明之理想態樣,本發明之液體組成物的鉬除去性高,所以即使是鉬為厚膜的含有銅及鉬之多層膜,仍能去除鉬而不致殘留。
又,本說明書中「含有銅及鉬之多層膜」,係指至少含有含銅之層、及含鉬之層的多層膜,較佳為指:包括由銅或含有銅作為主成分之化合物構成之層及由鉬或含鉬作為主成分之化合物構成的層的多層膜。在此,「含有銅作為主成分之化合物」,係指以重量基準計,含有銅50%以上,較佳為60%以上,更佳為70%以上之化合物。「含有鉬作為主成分之化合物」,係指以重量基準計,含有鉬50%以上,較佳為60%以上,更佳為70%以上之化合物。
本發明之液體組成物係使用於蝕刻含有銅及鉬之多層膜,能使如此的多層膜配線成為良好形狀。在此,針對上述多層膜配線之良好配線形狀說明。圖1係使用本發明之液體組成物蝕刻後之由含有銅及鉬之多層膜結構構成之配線(多層膜配線)之剖面示意圖。如圖1所示,在基板上疊層包括含銅之層(銅層)及含鉬之層(鉬層)之多層膜,並於其上疊層光阻,將多層膜蝕刻可獲得多層膜配線。
利用蝕刻獲得之多層膜配線,多層膜配線之端部之蝕刻面與基板間所夾的角(θ)為順推拔角係為重要,此角度為15~75度較佳,20~70度更佳,25~70度特佳。推拔角若小於15度,配線的剖面積變小,微細配線孔有斷線之虞,不理想。推拔角大於75度時,在配線之上層形成絕緣膜等時之被覆(coverage)不佳,故不理想。又,構成多層膜配線之下層(底部)之阻隔膜之端部至光阻之端部間的水平距離(底部臨界尺寸損失(bottom critical dimension loss,也簡稱為底部CD損失)宜為2.5μm以下較佳,1.8μm以下更佳,尤其1.5μm以下較佳。底部CD損失大於2.5μm
時,配線之剖面積減小,故不理想。又,於蝕刻之損失會增大。本發明中,藉由使用含有馬來酸離子供給源、銅離子供給源、及特定胺化合物之液體組成物實施含有銅及鉬之多層膜之蝕刻,能獲得良好形狀之多層膜配線。以下針對構成本發明之液體組成物之各成分說明。
(A)馬來酸離子供給源
本發明之液體組成物所含有之馬來酸離子供給源(以下有時簡單稱為(A)成分),係與銅離子形成錯合物並作為銅之蝕刻劑的作用。馬來酸離子供給源只要能供給馬來酸離子即可,無特殊限制,例如:馬來酸、馬來酸酐等為理想例。該等馬來酸離子供給源,可以單獨使用也可混用多種。該等之中,從對於水之溶解性或於液體組成物中之安定性優異、及蝕刻性能良好之觀點,馬來酸、及馬來酸酐為較佳。
馬來酸離子供給源((A)成分),在液體組成物1kg中的含量宜為0.05~5莫耳之範圍較佳,0.1~5莫耳之範圍更佳,尤其0.1~3莫耳之範圍較佳。
又,馬來酸離子供給源((A)成分)相對於後述銅離子供給源((B)成分)之摻合比,以莫耳基準計,宜為0.05~20之範圍較佳,0.05~10之範圍更佳,尤其0.1~10之範圍為較佳。本發明之液體組成物中之馬來酸離子供給源((A)成分)之含量若為上述範圍內,蝕刻速度及配線形狀更良好。
(B)銅離子供給源
本發明之液體組成物所含有之銅離子供給源(以下有時簡單稱為(B)成分),係作為銅之氧化劑的成分。銅離子供給源只要能供給銅(II)離子即無特殊限制,例如:銅以外,尚可列舉硫酸銅、硝酸銅、乙酸銅、氫氧化銅、氯化銅(II)、溴化銅(II)、氟化銅(II)、及碘化銅(II)、硫酸銨銅等銅鹽為理想例。此等銅離子供給源可以單獨使用也可組合使用多種。該等之中,銅、硫酸銅、硝酸銅、氫氧化銅、及乙酸銅尤佳。
銅離子供給源((B)成分)在液體組成物1kg中之含量宜為0.01~4莫耳之範圍較佳,再者,0.01~2莫耳之範圍更理想,尤佳為0.02~2莫耳之範圍。本發明之液體組成物中之銅離子供給源((B)成分)之含量若為上述範圍內,能獲得更良好之蝕刻速度及配線形狀。
(C)胺化合物
本發明之液體組成物所含有之胺化合物(以下有時簡單稱為(C)成分),具有使鉬除去性提高的作用。胺化合物係選自於由胺、及胺與酸之鹽構成之群組。該等胺化合物,例如:1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(乙胺基)乙醇、2-(丁胺基)乙醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、2-甲氧基乙胺、3-甲氧基丙胺、3-胺基-1-丙醇、2-胺基-2-甲基-1-丙醇、1-二甲胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、 啉、4-(2-羥基乙基) 啉、2-(2-胺基乙胺基)乙醇、2,2’-亞胺基二乙醇、二-2-丙醇胺、2,2’-(甲基亞胺基)二乙醇、1-哌哚乙醇這些胺化合物為理想例。此等胺化合物可以單獨使用也可組合使用多種。
該等之中,1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(乙胺基)乙醇、2-(丁胺基)乙醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、2-甲氧基乙胺、3-甲氧基丙胺、3-胺基-1-丙醇、2-胺基-2-甲基-1-丙醇、1-二甲胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、 啉、及4-(2-羥基乙基) 啉更理想。尤其,1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(二甲胺基)乙醇、2-甲氧基乙胺、3-胺基-1-丙醇、及 啉為較佳。
胺化合物((C)成分)在液體組成物1kg中之含量宜為0.1~5莫耳之範圍較佳,0.2~5莫耳之範圍更佳,尤其0.2~4莫耳之範圍為較佳。
又,胺化合物((C)成分)相對於銅離子供給源((B)成分)之摻合比,以莫耳基準計,為1~40之範圍較佳,更佳為1~20之範圍,尤其2~20之範圍為較佳。本發明之液體組成物中之胺化合物((C)成分)之含量若為上述範圍內,能獲得更良好之蝕刻速度及配線形狀。
(D)羧酸離子供給源
本發明之液體組成物視需要也可含有羧酸離子供給源(以下有時簡單稱為(D)成分)。羧酸離子供給源具有對於銅離子作為配位子的作用,能使蝕刻含有銅及鉬之多層膜之液體組成物的安定性提高且有達成蝕刻速度安定化的功能。又,有防止在蝕刻後之水淋洗步驟中,液體組成物以水稀釋時出現析出之殘渣的效果。
羧酸離子供給源((D)成分)只要是能供給羧酸離子者即可,無特殊限制,例如:甲酸、乙酸、丙酸、丁酸、異丁酸等單羧酸;草酸、丙二酸、琥珀酸、馬來
酸等二羧酸;甘胺酸、丙胺酸等胺基羧酸;甘醇酸、乳酸、2-羥基異丁酸、檸檬酸、酒石酸、蘋果酸等羥基羧酸及該等羧酸之鹽等為理想例。此等羧酸離子供給源可以單獨使用也可混用多種。
又,乙酸酐或丙酸酐、馬來酸酐等羧酸酐會與水反應而生成羧酸,故羧酸酐也可理想地作為(D)成分。
又,乙酸乙酯、乙酸丙酯、丙酸乙酯、丙二酸二甲酯、丙二酸二乙酯、琥珀酸二甲酯及琥珀酸二乙酯等羧酸酯會因水解反應而生成羧酸,故羧酸酯也可理想地作為(D)成分。
上述之中,考量取得容易性等,宜為乙酸、丙酸、甘醇酸、丙二酸、琥珀酸、乳酸、檸檬酸、酒石酸、蘋果酸;該等羧酸之鹽;及乙酸酐更佳,尤其乙酸、乙酸酐、甘醇酸、丙二酸、琥珀酸、乳酸、檸檬酸為較佳。
又,乙酸銅等羧酸銅鹽,具有作為(D)成分之作用,而且也作為前述銅離子供給源。例如:本發明之液體組成物中含有羧酸之銅鹽時,(D)成分之含量成為其他羧酸離子供給源與羧酸之銅鹽合計的含量。
再者,乙酸酐或丙酸酐等2分子羧酸脫水縮合而成的形態之羧酸酐,會與水反應而生成2分子羧酸,所以當含有此等羧酸酐作為(D)成分時,(D)成分之含量,係將羧酸酐之含量之2倍量定義為(D)成分之含量。
羧酸離子供給源((D)成分),於液體組成物1kg中之含量宜為0.05~5莫耳之範圍較佳,0.1~5莫耳之範圍更佳,尤其0.1~4莫耳之範圍為較佳。
又,羧酸離子供給源((D)成分)相對於銅離子供給源((B)成分)之摻合比,以以莫耳基準計,為0.05~20之範圍較佳,更佳為0.1~20之範圍,尤其0.2~20之範圍為較佳。本發明之液體組成物中之羧酸離子供給源((D)成分)之含量若為上述範圍內,蝕刻速度及配線形狀良好。
(E)鉬酸離子供給源
本發明之液體組成物視需要也可以含有鉬酸離子供給源(以下有時簡單稱為(E)成分)。鉬酸離子供給源具有調節含有銅及鉬之多層膜之蝕刻速度的作用或控制蝕刻而調節配線剖面形狀的作用。蝕刻步驟使用之液體組成物,會因鉬溶解而導致鉬酸離子之濃度上昇。所以藉由使液體組成物事先含有(E)成分,能夠使鉬酸離子之濃度上昇時之蝕刻特性(蝕刻速度、蝕刻形狀及液體組成物之安定性等)之變動減小。
鉬酸離子供給源只要是能供給鉬酸離子者即可,無特殊限制。如此的鉬酸離子,只要是在液體組成物中可溶之離子物質即可,無特殊限制,可為離子內含有1個鉬原子之原鉬酸離子(ortho-molybdate ion),此外,也可為離子內含有7個鉬原子之仲鉬酸離子(para-molybdate ion)等異多元鉬酸離子或離子內含有雜元素之雜多元鉬酸離子。
鉬酸離子供給源,例如:鉬以外,尚有鉬酸銨、鉬酸鈉、鉬酸鉀等鉬酸鹽;磷鉬酸銨、矽鉬酸銨等雜多元鉬酸鹽;氧化鉬、鉬藍等氧化物或氫氧化物;硫化鉬等為理想例。此等鉬酸離子供給源可以單獨使用也可組合使用多種。
該等之中,鉬、鉬酸銨、鉬酸鈉、鉬酸鉀、及氧化鉬更佳,尤其鉬、鉬酸銨、及氧化鉬為較佳。
本發明之液體組成物中之鉬酸離子供給源((E)成分)之含量,係換算成離子內含有1個鉬原子之原鉬酸離子之含量而算出。例如:鉬酸離子供給源((E)成分)使用離子內含有7個鉬原子之七鉬酸六銨等的情形,七鉬酸六銨之含量之7倍量成為鉬酸離子供給源((E)成分)之含量。
鉬酸離子供給源((E)成分)在液體組成物1kg中,以原鉬酸離子換算計,含量宜為1×10-6~9×10-2莫耳之範圍較佳,1×10-5~9×10-2莫耳之範圍更佳,尤其2×10-5~9×10-2莫耳之範圍為較佳。本發明之液體組成物中之鉬酸離子供給源((E)成分)之含量為上述範圍內的話,能獲得更良好之蝕刻速度及配線剖面形狀。
又,鉬酸離子供給源((E)成分)相對於銅離子供給源((B)成分)之摻合比為莫耳基準,可藉由添加鉬酸離子供給源((E)成分),使蝕刻步驟溶於液體組成物之銅離子與鉬酸離子之莫耳比成為同程度,而減小由於銅及鉬溶解所致之蝕刻特性變動。
上述本發明之液體組成物之pH也可為4~9之範圍。藉由使液體組成物之pH之範圍成為上述範圍,能使蝕刻速度及配線剖面形狀更良好。pH若未達4,鉬除去性有降低的傾向,不理想。另一方面,pH若超過9,蝕刻速度有降低的傾向,生產性下降,不理想。液體組成物之理想pH之範圍為pH4~9。
(F)pH調整劑
本發明之液體組成物中,為了調整pH值,視需要也可含有pH調整劑(以下有時簡單稱為(F)成分)。作為pH調整劑(F成分),只要是不妨礙上述液體組成物之效果者即可,無特殊限制,例如:氨;氫氧化鈉或氫氧化鉀等金屬氫氧化物;異丙胺、第三丁胺等胺類;羥胺等羥胺類;四甲基氫氧化銨等烷基銨氫氧化物;鹽酸、硫酸、硝酸、磷酸、及過氯酸等無機酸;甲烷磺酸及三氟甲烷磺酸等磺酸;等為理想例。此等pH調整劑可以單獨使用也可組合使用多種。該等之中,氨、氫氧化鉀、異丙胺、第三丁胺、四甲基氫氧化銨、硝酸、硫酸、磷酸、過氯酸更理想。惟,氨、氫氧化鈉及氫氧化鉀有使鉬除去性下降的傾向,故宜少量較佳。
本發明之液體組成物中,胺化合物也作為pH調節劑,但係含於(C)成分。又,羧酸也作為pH調整劑,但係含於(D)成分。
本發明之液體組成物中之pH調整劑之含量,可依其他成分之含量適當決定,以使液體組成物之pH成為目的值。
本發明之液體組成物,除了上述(A)~(C)成分、及視需要添加之(D)~(F)成分以外,也可在不妨礙上述液體組成物之效果的範圍內含有水、其他的蝕刻用液體組成物通常使用之各種添加劑。例如:水宜為利用蒸餾、離子交換處理、過濾處理、各種吸附處理等而去除了金屬離子或有機雜質、微粒粒子等者,純水更佳,尤其超純水為較佳。
本發明之液體組成物,也可含有公知之添加劑作為銅蝕刻速率之調節劑。比如,作為銅蝕刻速率之抑制劑,可含有苯并***、5-胺基-1H-四唑、咪唑、吡唑這些唑化合物、及磷酸等。又,作為銅蝕刻速率之上昇劑,可以含有氯化物離子、溴化物離子等鹵化物離子。
<含有銅及鉬之多層膜之蝕刻方法>
本發明之蝕刻方法,係蝕刻含有銅及鉬之多層膜之方法,包括使前述多層膜接觸上述液體組成物之步驟。依本發明之方法,能將含有銅及鉬之多層膜一次且以良好之蝕刻速度蝕刻。又,依本發明之理想態樣,如上述,能獲得推拔角為15~75度且底部CD損失為0~2.5μm般的多層膜配線剖面形狀。
本發明之蝕刻方法,係以含有銅及鉬之多層膜作為蝕刻對象物。本發明之理想態樣中,成為蝕刻對象物之多層膜,具有包括由銅或以銅為主成分之化合物構成之層及由鉬或以鉬作為主成分之化合物構成之層的多層結構。多層膜,可以列舉:將由銅或銅為主成分之化合物構成之層與由鉬或鉬為主成分之化合物構成之層予以疊層成的二層膜;將由鉬或鉬為主成分之化合物構成之層與由銅或銅為主成分之化合物之層與由鉬或鉬為主成分之化合物構成之層予以疊層成的三層膜等。尤其按照由鉬或鉬為主成分之化合物構成之層、由銅或銅為主成分之化合物構成之層、由鉬或鉬為主成分之化合物構成之層的順序疊層成的三層膜,考量本發明之液體組成物之性能能有效發揮之觀點,尤其理想。
再者,本發明之蝕刻方法,其蝕刻對象為:在基板上疊層由銦、鎵、及鋅構成之氧化物層(IGZO)並於其上設有至少包括含鉬之層與含銅之層之多層膜的多層膜配線基板。尤其,在基板上疊層由銦、鎵、及鋅構成之氧化物層(IGZO),且按照由鉬或鉬為主成分之化合物構成之層、由銅或銅為主成分之化合物構成之層、由鉬或鉬為主成分之化合物構成之層的順序疊層成的膜結構,考量能有效發揮本發明之液體組成物之性能之觀點,特別理想。
作為銅或以銅作為主成分之化合物,可列舉銅(金屬)或銅合金、或氧化銅、氮化銅等。鉬或以鉬為主成分之化合物可列舉鉬(金屬)或鉬合金、或其氧化物、氮化物等。
蝕刻對象物,可藉由以下方法獲得:例如於玻璃等基板上按照順序疊層由鉬構成之層與由銅構成之層與由鉬構成之層,以形成由三層膜構成之多層膜,並於其上塗佈光阻,再將所望圖案遮罩進行曝光轉印並顯影,而形成所望光阻圖案以獲得。
作為形成多層膜之基板,除了上述玻璃基板以外,也可為例如:在玻璃板上形成閘配線,並於此閘配線上設有諸如由氮化矽等構成之絕緣膜的層結構的基板。
本發明中,藉由使蝕刻對象物接觸上述液體組成物以蝕刻多層膜,形成所望之多層膜配線,可以獲得設有包括含鉬之層與含銅之層之多層膜的多層膜配線。如此之含有銅及鉬之多層膜配線,可理想地使用在平面顯示器等顯示裝置之配線等。
使蝕刻對象物接觸液體組成物之方法無特殊限制,例如可採用利用滴加液體組成物(單片旋轉處理)或噴淋等形式使其接觸對象物之方法、或使蝕刻對象物浸漬於液體組成物之方法等濕式法(濕)蝕刻方法。本發明可採用任一方法進行蝕刻。特別是,宜採用使液體組成物噴淋蝕刻對象物而接觸之方法。
使液體組成物對於對象物噴淋而接觸之方法,可以列舉從蝕刻對象物之上方將液體組成物朝下噴淋之方法、或從蝕刻對象物之下方將液體組成物朝上噴淋之方法等。此時之噴淋噴嘴可固定也可加入振動或滑動等動作。又,噴淋噴嘴可以鉛直朝下設置,也可傾斜設置。蝕刻對象物可固定也可加入搖動或旋轉等動作,也可水平配置也可傾斜配置。
液體組成物之使用溫度宜為10~70℃之溫度,尤其20~50℃為較佳。液體組成物之溫度若為10℃以上,蝕刻速度良好,故可獲致優異的生產效率。另一方面,若為70℃以下,能抑制液體組成變化,保持蝕刻條件為一定。藉由使液體組成物之溫度為高,蝕刻速度上昇,但是可以考慮壓抑液體組成物之組成變化為小,再決定適當最適之處理溫度。
其次,以實施例更詳細說明本發明,但本發明範圍不限於該等例。
<蝕刻後之多層配線剖面形狀之評價>
使用掃描型電子顯微鏡(「S5000H型(型號)」;日立製)以觀察倍率3萬倍(加速電壓2kV、發射電流10μA)觀察實施例及比較例獲得之實施蝕刻後之含有銅層及鉬層之多層薄膜試樣之配線剖面。依據獲得之SEM影像,配線剖面之推拔角為15~75度之順推拔形狀、及底部CD損失為2.5μm以下者評為合格品。
<蝕刻後之多層配線表面形狀之評價>
對於實施例及比較例獲得之實施蝕刻後之含有銅層及鉬層之多層薄膜試樣,於丙酮中於25℃浸漬300秒並將光阻剝離後,使用掃描型電子顯微鏡(「S5000H型(型號)」;日立製)以觀察倍率2萬倍(加速電壓2kV、發射電流10μA)觀察光阻剝離後之配線表面。依據獲得之SEM影像,在基板表面無銅及鉬殘留者評為合格品。
<IGZO之蝕刻速率(E.R)之評價>
以n & k Technology Inc.製之光學式薄膜特性測定裝置n & k Analyzer 1280測定實施例及比較例獲得之已進行處理後之IGZO/玻璃基板中的處理前後的IGZO膜厚,將處理前後之膜厚差除以蝕刻時間以求算E.R。IGZO之E.R未達10埃/min(1nm/min)者評為合格品。
<參考例1:鉬/銅/鉬/玻璃基板之製作>
在玻璃基板(尺寸:150mm×150mm)上濺鍍鉬,而形成由鉬(金屬)構成之層(鉬膜厚:200埃(20nm)),其次濺鍍銅,形成由銅(金屬)構成之層(銅膜厚:5000埃(500nm)),再濺鍍鉬,形成由鉬(金屬)構成之層(鉬膜厚:200埃(20nm)),成為鉬
/銅/鉬之三層膜結構。再塗佈光阻,將線狀圖案遮罩(線寬:20μm)曝光轉印後、顯影,以製成形成了光阻圖案之鉬/銅/鉬/玻璃基板。參考例1所示之含有銅及鉬之多層膜中,銅層與鉬層之膜厚之比例(鉬膜厚/銅膜厚)=(200+200)/5000=0.08。
<參考例2:IGZO/玻璃基板之製作>
在玻璃基板(尺寸:150mm×150mm)上濺鍍銦、鎵、鋅及氧之元素比為1:1:1:4之IGZO,形成由IGZO構成之層(IGZO膜厚:500埃(50nm)),製成IGZO/玻璃基板。
<參考例3:鉬/銅/鉬/IGZO/玻璃基板之製作>
在玻璃基板(尺寸:150mm×150mm)上將銦、鎵、鋅及氧之元素比為1:1:1:4之IGZO膜以濺鍍法形成膜厚500埃(50nm),其次濺鍍鉬,形成由鉬(金屬)構成之層(鉬膜厚:300埃(30nm)),其次,濺鍍銅,形成由銅(金屬)構成之層(銅膜厚:3000埃(300nm)),再濺鍍鉬,形成由鉬(金屬)構成之層(鉬膜厚:300埃(30nm)),製成鉬/銅/鉬/IGZO之結構。再塗佈光阻,將線狀圖案遮罩(線寬:20μm)曝光轉印後、顯影,製成已形成光阻圖案之鉬/銅/鉬/IGZO/玻璃基板。參考例3所示之含有銅及鉬之多層膜中,銅層與鉬層之膜厚之比例(鉬膜厚/銅膜厚)=(300+300)/3000=0.2。
實施例1
於容量10L之聚丙烯容器中投入純水6.96kg、(A)為馬來酸離子供給源之馬來酸酐(和光純藥工業(股)公司製、特級、分子量98.06)0.64kg、(B)作為銅離子供給源之氫氧化銅(和光純藥工業(股)公司製、特級、分子量97.56)0.15kg、作為(D)成分之乙酸(和光純藥工業(股)公司製、特級、分子量60.05)0.70kg、及作為(E)成分之鉬酸銨0.008kg。投入係(F)pH調整劑且作為一種(C)胺化合物之1-胺基-2-丙醇(和光純藥工業(股)公司製、特級、分子量75.11)1.54kg。攪拌並確認各成分溶解後,再度攪拌並製成液體組成物。得到之液體組成物之pH為6.0。
依上述方式獲得之液體組成物之各成分之含量,就液體組成物每1kg,(A)成分為0.65莫耳、(B)成分為0.16莫耳,(A)成分相對於(B)成分之摻合比(莫耳比)為4.1。又,就液體組成物每1kg之(C)成分之含量為2.04莫耳。(C)相對於(B)成分成分之摻合比(莫耳比)為13.0。液體組成物每1kg之(D)成分之含量為1.17莫耳。(D)成分相對於(B)成分之摻合比(莫耳比)為7.4。液體組成物每1kg之(E)成分之含量為0.0044莫耳。
使用此液體組成物對於參考例1獲得之已形成光阻圖案之鉬/銅/鉬/玻璃基板,使用小型蝕刻機(關東機械工業製)於35℃進行噴淋處理。鉬/銅/鉬/玻璃基板,設成成膜面成為上方地水平設置,並將噴淋噴嘴以鉛直朝下地固定。
以目視確認直到未被光阻覆蓋的部分的鉬/銅/鉬多層膜消失且透明玻璃基板露出之時間(適量蝕刻時間),結果為148秒。將蝕刻222秒(50%過蝕刻條件)後
之鉬/銅/鉬/玻璃基板以純水淋洗處理後,以吹風機乾燥,並使用光學顯微鏡觀察,結果確認:已圖案化之光阻所覆蓋以外的無遮蓋的鉬/銅/鉬多層膜完全消失。
將蝕刻處理後之鉬/銅/鉬/玻璃基板裁斷,以掃描型二次電子顯微鏡觀察基板的剖面,結果配線端部之蝕刻面與下層基板所成的角度(推拔角)為65度的順推拔形狀,配線之下層(底部)端部至光阻端部間的水平距離(底部CD損失)為1.7μm。獲得之評價結果,如下表1所示。又,表1中之各成分之含量係代表液體組成物1kg所含有之各成分之莫耳數。又,底部CD損失值係以50%過蝕刻條件測得之值。
實施例2~6
將實施例2~6中,為一種(C)成分之2-(甲胺基)乙醇之摻合量改為1.48kg(實施例2)、2-(二甲胺基)乙醇之摻合量改為1.67kg(實施例3)、2-甲氧基乙胺之摻合量改為1.49kg(實施例4)、3-胺基-1-丙醇之摻合量改為1.48kg(實施例5)、 啉之摻合量改為1.70kg(實施例6),除此以外與實施例1同樣製備蝕刻液(調整純水量,使液體組成物之全部重量成為10kg。以下液體組成物之調製也相同),使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。評價結果示於表1。
使用掃描型二次電子顯微鏡觀察基板之剖面及表面,結果關於以任一液體組成物進行噴淋處理後之基板,推拔角及底部CD損失均良好,未觀察到鉬殘留。實施例3獲得之基板之配線剖面之二次電子顯微鏡像示於圖2,基板之表面之二次電子顯微鏡像示於圖3。
比較例1
將實施例1中之為一種(C)成分之1-胺基-2-丙醇替換為2-胺基乙醇之摻合量1.26kg,除此以外與實施例1同樣製備蝕刻液,並使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。評價結果示於表1。使用掃描型二次電子顯微鏡觀察基板之剖面及表面,結果觀察到有鉬殘留的狀態。
比較例2
將實施例1中的為一種(A)成分的馬來酸酐之摻合量改為0.42kg、為一種(D)成分之乙酸之摻合量改為0.46kg、為一種(C)成分之1-胺基-2-丙醇改為氨之摻合量0.22kg,除此以外與實施例1同樣製備蝕刻液,並使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。評價結果示於表1。
使用掃描型二次電子顯微鏡觀察基板之剖面及表面。結果觀察到有鉬殘留的狀態。比較例2獲得之基板之配線剖面之二次電子顯微鏡像示於圖4、基板表面之二次電子顯微鏡像示於圖5。在配線的側邊觀察到有鉬殘留為膜狀的狀態。配線的側邊係位在光阻所覆蓋之部分的正下方的位置,液之置換性差,故為容易殘留鉬的位置。以上,由比較例1及2可知不含(C)胺化合物之藥液組成對鉬之除去性不足。
比較例3
於容量10L之聚丙烯容器中投入純水7.7kg、蘋果酸0.5kg、乙酸銅(II)一水合物0.3kg、咪唑0.5kg、及三乙醇胺1.0kg。攪拌並確認各成分溶解後,再度攪拌並配製液體組成物。液體組成物之pH為6.8。使用該液體組成物實施噴淋處理(50%過蝕刻條件)。適量蝕刻時間為242秒,推拔角為80度、底部CD損失為4.4μm。比
較例3獲得之基板之配線剖面之二次電子顯微鏡像示於圖6。底部CD損失大,未能獲得良好之配線形狀。在配線的側邊確認有鉬殘留的狀態。由以上可知:由比較例3,不含(A)馬來酸酐離子供給源、及(C)胺化合物之藥液組成,未能獲得良好之配線形狀,且對於鉬之除去性不足。
實施例7~12
使用表2所示組成之液體組成物,與實施例1同樣地對於鉬/銅/鉬/玻璃基板實施噴淋處理(50%過蝕刻條件)。評價結果示於表2。使用掃描型二次電子顯微鏡觀察基板之剖面及表面,結果任一液體組成物處理後之基板,推拔角及底部CD損失均良好,未觀察到鉬殘留。實施例9獲得之基板之配線剖面之二次電子顯微鏡像示於圖7,基板表面之二次電子顯微鏡像示於圖8。
比較例4
將實施例12中之為一種(A)成分之馬來酸酐排除、為一種(F)成分之硫酸之摻合量改為0.33kg,除此以外與實施例12同樣進行,製成蝕刻液,並使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。即使處理400秒,鉬/銅/鉬基板仍未變得透明,蝕刻未完成。由以上可知在不含(A)成分之液體組成物中,無法蝕刻含有銅及鉬之多層膜。
比較例5
將實施例12中之為一種(B)成分之氫氧化銅排除、為一種(E)成分之鉬酸銨排除、為一種(C)成分之1-胺基-2-丙醇之摻合量改為0.99kg,除此以外與實施例12同樣配製蝕刻液,使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。即使處理400秒,鉬/銅/鉬基板仍未變得透明,蝕刻未完成。由以上可知:在不含(B)成分之液體組成物中,未能蝕刻含有銅及鉬之多層膜。
實施例13~14
使用表3所示組成之液體組成物,與實施例1同樣地對於鉬/銅/鉬/玻璃基板實施噴淋處理(50%過蝕刻條件)。評價結果示於表3。任一液體組成物處理後之基板,均為推拔角及底部CD損失良好,未觀察到鉬殘留。
實施例15~17
使用表4所示組成之液體組成物,對於參考例3獲得之已形成光阻圖案之鉬/銅/鉬/IGZO/玻璃基板,使用該蝕刻液實施噴淋處理(50%過蝕刻條件)。評價結果示於表4。任一液體組成物處理後之基板,均為推拔角及底部CD損失良好,未觀察到鉬殘留。又,未觀察到對於IGZO層之損傷。實施例16獲得之基板之配線剖面之二次電子顯微鏡像示於圖9,基板之表面之二次電子顯微鏡像示於圖10。
再者,使用表4所示組成之液體組成物,對於參考例2獲得之IGZO/玻璃基板,使用小型蝕刻機(關東機械工業製)於35℃進行300秒噴淋處理。以n & k Technology Inc.製光學式薄膜特性測定裝置n & k Analyzer 1280測定處理前後之IGZO膜厚,將處理前後之膜厚差除以蝕刻時間,計算出蝕刻速率。獲得之評價結果如表4,IGZO之E.R未達10埃/min(1nm/min)。
由以上之評價結果可知,實施例之液體組成物均能將含有銅及鉬之多層膜以良好蝕刻速度蝕刻,且蝕刻後之配線形狀亦良好。於將IGZO作為半導體層之鉬/銅/鉬/IGZO/玻璃基板之蝕刻時,亦為能將含有銅及鉬之多層膜選擇性地以良好蝕刻速度蝕刻,且蝕刻後之配線形狀亦良好,也未觀察到對於IGZO之損傷。
本發明之液體組成物能理想地使用於含有銅及鉬之多層膜之蝕刻,能將由含銅及鉬之多層結構構成之配線一次且以良好蝕刻速度蝕刻,可達成高生產性。
Claims (16)
- 一種液體組成物,其從疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜而得的基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層; 包含: (A)馬來酸離子供給源、 (B)銅離子供給源、及 (C)選自於由1-胺基-2-丙醇、2-(甲胺基)乙醇、2-(乙胺基)乙醇、2-(丁胺基)乙醇、2-(二甲胺基)乙醇、2-(二乙胺基)乙醇、2-甲氧基乙胺、3-甲氧基丙胺、3-胺基-1-丙醇、2-胺基-2-甲基-1-丙醇、1-二甲胺基-2-丙醇、2-(2-胺基乙氧基)乙醇、□啉、及4-(2-羥基乙基)□啉構成之群組中之至少1種胺化合物; 且pH値為4~9。
- 如申請專利範圍第1項之液體組成物,其中,該由鉬或含有鉬作為主成分之化合物構成之層之膜厚(鉬膜厚)相對於由銅或含有銅作為主成分之化合物構成之層之膜厚(銅膜厚)(各層為多層的情形,係各自的總膜厚)之比例(鉬膜厚/銅膜厚)為0.05~1。
- 如申請專利範圍第1或2項之液體組成物,其中,該(A)馬來酸離子供給源係選自於由馬來酸、及馬來酸酐構成之群組中之至少1種。
- 如申請專利範圍第1或2項之液體組成物,其中,該(B)銅離子供給源係選自於由銅、硫酸銅、硝酸銅、乙酸銅、及氫氧化銅構成之群組中之至少1種。
- 如申請專利範圍第1或2項之液體組成物,其中,該(A)馬來酸離子供給源相對於該(B)銅離子供給源之摻合比,以莫耳基準計,為0.1~10。
- 如申請專利範圍第1或2項之液體組成物,其中,該(C)胺化合物相對於該(B)銅離子供給源之摻合比,以莫耳基準計,為2~20。
- 如申請專利範圍第1或2項之液體組成物,係更包含(D)羧酸離子供給源而成。
- 如申請專利範圍第7項之液體組成物,其中,該羧酸離子供給源(D)係選自於由乙酸、甘醇酸、丙二酸、琥珀酸、乳酸、檸檬酸及該等羧酸之鹽、及乙酸酐構成之群組中之至少1種。
- 如申請專利範圍第7項之液體組成物,其中,該羧酸離子供給源(D)相對於該銅離子供給源(B)之摻合比,以莫耳基準計,為0.1~10。
- 如申請專利範圍第1或2項之液體組成物,係更包含鉬酸離子供給源(E)而成。
- 如申請專利範圍第1或2項之液體組成物,其從在該基板上疊層由銦、鎵、及鋅構成之氧化物層(IGZO)並進一步於其上疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜而得的基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層。
- 一種蝕刻方法,係從疊層包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的多層膜的基板,選擇性地蝕刻由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層的方法; 包含以下步驟: 使如申請專利範圍第1至11項中任一項之液體組成物接觸該多層膜。
- 如申請專利範圍第12項之蝕刻方法,其中,該多層膜係將由鉬或含有鉬作為主成分之化合物構成之層、與由銅或含有銅作為主成分之化合物構成之層予以疊層而得之二層膜。
- 如申請專利範圍第12項之蝕刻方法,其中,該多層膜係將由鉬或含有鉬作為主成分之化合物構成之層、由銅或含有銅作為主成分之化合物構成之層、及由鉬或含有鉬作為主成分之化合物構成之層依序疊層而得之三層膜。
- 一種多層膜配線基板之製造方法,係製造在基板上設置有多層膜之多層膜配線基板之方法,該多層膜至少包含由銅或含有銅作為主成分之化合物構成之層及由鉬或含有鉬作為主成分之化合物構成之層; 此方法係: 於基板上依序設置由鉬或含有鉬作為主成分之化合物構成之層及由銅或含有銅作為主成分之化合物構成之層而形成多層膜, 在該多層膜上被覆光阻而形成光阻膜, 將該光阻膜曝光・顯影而形成既定光阻圖案以藉此形成蝕刻對象物, 使如申請專利範圍第1至11項中任一項之液體組成物接觸該蝕刻對象物,藉此蝕刻該多層膜而形成多層膜配線。
- 一種多層膜配線基板,係利用如申請專利範圍第15項之多層膜配線基板之製造方法所製得。
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