TWI548041B - 半導體裝置及在半導體裝置內製造金屬接觸及生成奈米碳管結構以連接半導體終端與金屬層的方法 - Google Patents

半導體裝置及在半導體裝置內製造金屬接觸及生成奈米碳管結構以連接半導體終端與金屬層的方法 Download PDF

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TWI548041B
TWI548041B TW103146202A TW103146202A TWI548041B TW I548041 B TWI548041 B TW I548041B TW 103146202 A TW103146202 A TW 103146202A TW 103146202 A TW103146202 A TW 103146202A TW I548041 B TWI548041 B TW I548041B
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catalyst
carbon nanotube
semiconductor device
nanotube structure
layer
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TW201543619A (zh
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林瑀宏
葉菁馥
張志維
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台灣積體電路製造股份有限公司
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Description

半導體裝置及在半導體裝置內製造金屬接觸及生成奈米碳管結構以連接半導體終端與金屬層的方法
本發明係有關於在半導體裝置內產生金屬接觸的方法，特別係有關於使用奈米管技術產生金屬接觸的方法。
在此專利文件提及的技術係關於在半導體裝置內創造金屬接觸(M0)的方法，及更具體地是使用奈米管科技創造金屬接觸的方法。
半導體裝置例如金屬氧化物半導體場效電晶體(MOSFET)的微縮在過去幾十年間，積體電路的單位功能在速度、效能、密度及成本上一直都有持續地進步。在創造金屬接觸的製程上的進步可更進一步微縮積體電路。
本揭露的一型態係關於在半導體裝置內製造金屬接觸的方法，其包括沉積催化劑層於導通孔；由沉積後的催化劑層形成催化劑；生成奈米碳管結構於導通孔內的催化劑上； 自催化劑形成矽化物；對奈米碳管結構實施化學機械研磨(CMP)製程以移除催化劑及奈米碳管結構的最上層；以及沉積金屬材料於奈米碳管結構上。
本揭露的另一型態係關於半導體元件，其包括在其他實施例中係揭露一種半導體裝置，其包括導通孔，位於該半導體裝置內的終端與金屬接觸間；矽化物層，形成於終端正上方的導通孔內，矽化物層係由沉積於導通孔內的金屬材料層被施加熱製程形成催化劑，且更施加退火製程將催化劑轉變成矽化物層；以及奈米碳管結構包括複數個垂直奈米碳管，生成於導通孔內且連接矽化物與金屬接觸，奈米碳管在某溫度範圍下使用前驅物而垂直生成。
本揭露的另一型態係關於一種在半導體裝置內生成奈米碳管結構以連接半導體終端與金屬層的方法，其包括形成催化劑於在半導體裝置內的導通孔；在催化劑的表面上吸附前驅物；由催化劑及前驅物形成金屬-碳合金；以及自導通孔底部垂直生成奈米碳管結構，奈米碳管結構包括複數個奈米碳管，其中奈米碳管的直徑受限於催化劑的尺寸。
2‧‧‧基板
4‧‧‧源極區
6‧‧‧矽化物區
8‧‧‧奈米管結構
10‧‧‧介電材料
12‧‧‧金屬接觸
22‧‧‧源極終端
24‧‧‧導通孔
26‧‧‧催化劑層
28、40‧‧‧催化劑
30、46‧‧‧奈米碳管
32‧‧‧矽化物
42‧‧‧碳基前驅物
44‧‧‧金屬-碳合金元件
102-124‧‧‧操作
在以下說明書的細節中，閱讀時搭配圖示最能理解本揭示的樣態。值得注意的是，以工業上實施的標準而視，各種特徵部件並未依其比例繪示。事實上，為了討論的清晰簡潔，各種特徵部件的大小可以任意增加或減少。
第1圖顯示根據某些實施例，利用奈米管科技形成例示的半導體裝置之區塊圖。
第2圖係根據某些實施例，描述具有用來連接終端與金屬接觸終端的奈米管結構的半體裝置的例示的製造方法之製程流程圖。
第3圖顯示根據某些實施例，催化劑層沉積後，例示的半導體結構之示意圖。
第4圖顯示根據某些實施例，催化劑形成後，例示的半導體結構之示意圖。
第5圖顯示根據某些實施例，奈米碳管生成後，例示的半導體結構之示意圖。
第6圖顯示根據某些實施例，形成矽化物及實施化學機械研磨(CMP)後，例示的半導體結構的示意圖。
第7圖係根據某些實施例，描述生成奈米碳管的例示的方法之製程流程圖。
第8圖顯示根據某些實施例，吸附前驅物之例示的半導體結構的示意圖。
第9圖顯示根據某些實施例，形成金屬-碳合金(metal-carbon alloy)之例示的半導體結構的示意圖。
第10圖顯示根據某些實施例，垂直生成奈米碳管(CNT)之例示的半導體結構示意圖。
第11圖顯示根據某些實施例，從接觸底部垂直生成奈米碳管完成之例示的半導體結構示意圖。
要瞭解的是本說明書以下的揭露內容提供許多不同的實施例或範例，以實施本發明的不同特徵部件。而本說明 書以下的揭露內容是敘述各個構件及其排列方式的特定範例，以求簡化發明的說明。當然，這些特定的範例並非用以限定本發明。例如，若是本說明書以下的揭露內容敘述了將一第一特徵部件形成於一第二特徵部件之上或上方，即表示其包含了所形成的上述第一特徵部件與上述第二特徵部件是直接接觸的實施例，亦包含了尚可將附加的特徵部件形成於上述第一特徵部件與上述第二特徵部件之間，而使上述第一特徵部件與上述第二特徵部件可能未直接接觸的實施例。另外，本發明的說明中不同範例可能使用重複的參考符號及/或用字。這些重複符號或用字係為了簡化與清晰的目的，並非用以限定各個實施例及/或所述外觀結構之間的關係。
再者，為了方便描述圖式中一元件或特徵部件與另一(複數)元件或(複數)特徵部件的關係，可使用空間相關用語，例如“在...之下”、“下方”、“下部”、“上方”、“上部”及類似的用語。除了圖式所繪示的方位之外，空間相關用語涵蓋使用或操作中的裝置的不同方位。例如，若翻轉圖式中的裝置，描述為位於其他元件或特徵部件“下方”或“在。。。之下”的元件，將定位為位於其他元件或特徵部件“上方”。因此，範例的用語“下方”可涵蓋上方及下方的方位。所述裝置也可被另外定位(例如，旋轉90度或者位於其他方位)，並對應地解讀所使用的空間相關用語的描述。
第1圖為利用奈米管科技形成例示的半導體裝置之區塊圖。裝置係製作於基板2上，在此範例中，基板包含塊狀基板，雖然也可使用其他基板結構，例如絕緣上覆矽(SOI)。 在一些實施例中，塊狀基板可包含元素半導體，其包含矽或鍺的晶體、多晶或非晶結構；化合物半導體包含碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦、及銦化銻；合金半導體包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP及GaInAsP；其他任何適合的材料或其組合。在一些實施例中，塊狀基板可包含p型材料，且在其他實施例中，塊狀基板可包含n型材料。基板2可包含隔離區、摻雜區及/或其他特徵部件。
例示的半導體裝置更包含位於基板2裡的源極區4、矽化物區6、奈米管結構8、絕緣或介電材料10及金屬接觸(M0)12。在此範例中，奈米管結構8為垂直方向且自源極區4向上延伸。例示的奈米管結構8係由碳形成，且形成於半導體裝置裡的終端(terminal)(在此範例中為源極區)與金屬接觸12間的導通孔內。奈米碳管結構8包含複數個生成於導通孔內的垂直奈米碳管且其連接矽化物6與金屬接觸12。奈米碳管係在某溫度範圍下使用前驅物而垂直生成。
一層矽化物6形成在終端4正上方的導通孔內。矽化物6係由沉積於導通孔內的一層金屬材料被施加熱製程後形成催化劑，且更施加退火製程後，將催化劑轉變成矽化物6而形成。
第2圖係描述具有用來連接終端與金屬接觸的奈米管結構的半導體裝置的例示的製造方法之製程流程圖。製造半導體裝置(操作102)且形成至少一導通孔(操作104)以用於連接之後的金屬接觸(M0)，形成奈米碳管(CNT)(操作106)，隨後形成金屬接觸(操作108)。
形成奈米碳管可包含在操作104所形成的導通孔內沉積催化劑層(操作110)。沉積的催化劑層可包含金屬化合物例如為Cu、Ni、Co、Fe及Ti。沉積的催化劑層可在溫度T介於-30至450℃且壓力P介於5至100mTorr，沉積2-30nm的厚度。
沉積催化劑層後，由沉積的催化劑層金屬材料例如為Ni、Co、Fe或Ti形成催化劑(操作112)。對沉積的催化劑層金屬材料施加熱製程以形成催化劑。在此範例中，催化劑係藉由在溫度介於300-600℃間，在H2的大氣壓力P介於10-3至10Torr間進行化學氣相沉積(CVD)或退火1至30分而形成。
催化劑形成後，奈米碳管結構包含複數個奈米碳管(CNT)生成在導通孔內的催化劑上(操作114)。在此範例中，奈米碳管在溫度介於300-800℃間使用前驅物為CH4、C2H2、C2H6或C2H5OH及Ar及H2的壓力P等於10-3至102Torr垂直成長。
奈米管生成後，由催化劑形成矽化物(操作116)。在此範例中，使用熱製程藉由溫度介於400至900℃間且壓力P等於10-3至10mTorr間退火形成矽化物。矽化物形成後，對奈米碳管結構施加化學機械研磨(CMP)製程以移除催化劑及奈米管材料的最頂層。
第3圖顯示沉積催化劑層(第2圖的操作110)後，例示的半導體結構之示意圖，其繪示源極終端22、導通孔24及沉積的催化劑層26。
第4圖顯示催化劑形成(第2圖的操作112)後，例 示的半導體結構之示意圖，其繪示源極終端22、導通孔24及催化劑28。
第5圖顯示奈米碳管生成(第2圖的操作114)後，例示的半導體結構的示意圖。其繪示源極終端22、催化劑28及奈米碳管30。
第6圖顯示形成矽化物及實施CMP(第2圖的操作116)後，例示的半導體結構的示意圖。其繪示源極終端22、奈米碳管30及矽化物32。
第7圖係描述生成奈米碳管的例示的方法之製程流程圖。在此範例中，前驅物CH4、C2H2、C2H6或C2H5OH的吸附在催化劑表面(操作118)。第8圖係顯示吸附前驅物(第7圖的操作118)之例示的半導體結構示意圖。其繪示金屬催化劑40與碳基前驅物42吸附在催化劑40的表面上。
參照回第7圖，吸附前驅物後，形成金屬-碳合金(操作120)。第9圖顯示形成金屬-碳合金(第7圖的操作120)之例示的半導體結構的示意圖。其繪示已形成之金屬-碳合金元件44。
參照回第7圖，金屬-碳合金形成後，奈米碳管開始垂直成長，奈米碳管的直徑受限於催化劑的尺寸，其加速奈米碳管的垂直成長(操作122)。第10圖顯示垂直生成奈米碳管(第7圖的操作122)之例示的半導體結構的示意圖。其繪示奈米碳管46垂直成長的初期階段。
參照回第7圖，垂直的奈米碳管生成已完成(操作124)。第11圖顯示自接觸底部完成垂直生長的奈米碳管(第7 圖的操作124)之例示的半導體結構示意圖。其繪示完全垂直生成後的奈米碳管46。實施CMP製程後，金屬層可連接至奈米碳管。
使用奈米碳管將半導體裝置內的終端連接至金屬層，可容許由下向上製程而沒有懸突(overhang)及頸部偏差(necking bias)的問題。此外，形成奈米碳管的催化劑例如為Ni、Co、Fe、Ti及TiO2-X(X=0-2)可與Si反應形成矽化物。在一些條件下，可容許奈米碳管/TiO2/Si之金屬隔離半導體(metal-insulator semiconductor；MIS)結構的穿隧效應，也展現了低接觸電阻(Rcsd)之效能。
在此說明的此範例可允許完全“由下向上”的製程並且不會有在一些金屬製程(metallization process)中可能產生的鎢縫隙填充問題(W gap fill issue)。也可藉由“沉積催化劑形成奈米碳管”來簡化金屬製程而不用“鎢黏合層”、“鎢晶種層”及“鎢化學氣相沉積(WCVD)”製程。
在一實施利中，本揭露係在半導體裝置內製造金屬接觸的方法，此方法包括沉積催化劑層於導通孔內，由沉積的催化劑層形成催化劑，及生成奈米碳管結構於導通孔內的催化劑上。此方法更包括由催化劑形成矽化物，對奈米碳管結構實施化學機械研磨(CMP)製程以移除催化劑及奈米管材料的最上層，以及沉積金屬材料於奈米碳管結構上。
這些樣態及其他實施例可包含一或多個如下所述的特徵。沉積催化劑層可包括沉積例如鎳、銅、鐵或鈦的金屬材料。沉積催化劑層可包括沉積一層厚度介於2-30nm的金屬 材料。形成催化劑可包括使用熱製程透過化學氣相沉積(CVD)或退火形成催化劑。生成奈米碳管結構可包括在300-800℃的溫度下垂直生成奈米碳管。生成奈米碳管結構可包括使用前驅物為CH4、C2H2、C2H6或C2H5OH垂直生成奈米碳管。此方法可更包括在催化劑的表面上吸附前驅物。此方法可更包括形成金屬-碳合金。奈米碳管的直徑受限於催化劑的尺寸，其加速從接觸底部垂直生成奈米碳管。由催化劑形成矽化物可包括使用熱製程透過退火以形成矽化物。
在其他實施例中係揭露半導體裝置，此半導體裝置包括導通孔位於半導體裝置內的終端與金屬接觸間，一層矽化物形成於終端正上方的導通孔內，及奈米碳管結構包括複數個生成於導通孔內垂直的奈米碳管，且連接矽化物與金屬接觸。矽化物係由沉積於導通孔內的一層金屬材料被施加熱製程形成催化劑而形成。這層金屬材料更被施加退火製程將催化劑轉變成矽化物。奈米碳管在某溫度範圍下使用前驅物而垂直生成。
這些樣態及其他實施例可包含一或多個如下所述的特徵。可使用由金屬材料沉積層所形成的催化劑而生成奈米碳管結構。金屬材料沉積層可包含鎳、銅、鐵或鈦。金屬材料沉積層可具有2-30nm的厚度。
在其他實施例中，揭示在半導體裝置內生成奈米碳管結構以連接半導體終端與金屬層的方法，此方法包括在半導體裝置內的導通孔裡形成催化劑，在催化劑的表面上吸附前驅物，由催化劑及前驅物形成金屬-碳合金，以及自導通孔底 部垂直地生成奈米碳管結構。奈米碳管結構包括複數個奈米碳管，其中奈米碳管的直徑受限於催化劑的尺寸。
這些樣態及其他實施例可包含一或多個如下所述的特徵。生成奈米碳管結構可包括在300-800℃的溫度下，垂直地生成複數個奈米碳管。前驅物可包括CH4、C2H2、C2H6或C2H5OH。可透過使用退火製程來完成由催化劑形成矽化物。形成催化劑可包括沉積一層金屬材料，其包含鎳、銅、鐵或鈦。形成催化劑可括使用熱製程透過化學氣相沉積(CVD)或退火形成催化劑。
以上敘述許多實施例的特徵，使所屬技術領域中具有通常知識者能夠清楚理解以下的說明。所屬技術領域中具有通常知識者能夠理解其可利用本發明揭示內容作為基礎，以設計或更動其他製程及結構而完成相同於上述實施例的目的及/或達到相同於上述實施例的優點。所屬技術領域中具有通常知識者亦能夠理解不脫離本發明之精神和範圍的等效構造可在不脫離本發明之精神和範圍內作任意之更動、替代與潤飾。
2‧‧‧基板
4‧‧‧源極區
6‧‧‧矽化物區
8‧‧‧奈米管結構
10‧‧‧介電材料
12‧‧‧金屬接觸

Claims (11)

  1. 一種在半導體裝置內製造金屬接觸的方法，包括：沉積一催化劑層於一導通孔內；由沉積的該催化劑層形成一催化劑；生成一奈米碳管結構於該導通孔內的該催化劑上；生成該奈米碳管結構後，由該催化劑形成一矽化物；對該奈米碳管結構實施一化學機械研磨(CMP)製程以移除該催化劑及該奈米碳管結構的最上層；以及沉積一金屬材料於該奈米碳管結構上。
  2. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中沉積該催化劑層包括沉積選自於鎳、銅、鐵或鈦的一金屬材料。
  3. 如申請專利範圍第2項所述之在半導體裝置內製造金屬接觸的方法，其中沉積該催化劑層包括沉積一層厚度介於2-30nm的該金屬材料。
  4. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中形成該催化劑包括使用一熱製程透過化學氣相沉積(CVD)或退火形成該催化劑。
  5. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中生成該奈米碳管結構包括在300-800℃的溫度下垂直生成複數個奈米碳管。
  6. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中生成該奈米碳管結構包括使用CH4、C2H2、C2H6或C2H5OH的一前驅物垂直生成複數個奈米碳管 (CNT)，在該催化劑的一表面上吸附該前驅物及形成一金屬-碳合金。
  7. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中生成該奈米碳管結構包括使用CH4、C2H2、C2H6或C2H5OH的一前驅物垂直生成複數個奈米碳管(CNT)，且該些奈米碳管的直徑受限於該催化劑的一尺寸。
  8. 如申請專利範圍第1項所述之在半導體裝置內製造金屬接觸的方法，其中由該催化劑形成該矽化物包括使用一熱製程透過退火形成該矽化物。
  9. 一種半導體裝置，包括：一導通孔，位於該半導體裝置內的一終端與一金屬接觸間；一矽化物層，形成於該終端正上方的該導通孔內，該矽化物層係由沉積於該導通孔內的一金屬材料層被施加一熱製程形成一催化劑，且更施加一退火製程將該催化劑轉變成該矽化物層而形成，其中一部分的該矽化物層鑲入於該終端內；以及一奈米碳管結構包括複數個垂直的奈米碳管，生成於該導通孔內且連接該矽化物層與該金屬接觸，該些奈米碳管在一溫度範圍下使用一前驅物垂直生成。
  10. 如申請專利範圍第9項所述之半導體裝置，其中該些奈米碳管結構係使用由該金屬材料層所形成的該催化劑而生成，其中該金屬材料層包括鎳、銅、鐵、鈷或鈦。
  11. 一種在半導體裝置內生成奈米碳管結構以連接半導體終端與金屬層的方法，該方法包括： 形成一催化劑於一半導體裝置內的一導通孔；在該催化劑的一表面上吸附一前驅物；由該催化劑及該前驅物形成一金屬-碳合金；自該導通孔底部垂直生成一奈米碳管結構，該奈米碳管結構包括複數個奈米碳管，其中該些奈米碳管的直徑受限於該催化劑的尺寸；以及生成該奈米碳管結構後，由該催化劑形成一矽化物。
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