TWI532812B - 膠膜、晶圓切割膠帶及使用其之半導體裝置 - Google Patents

膠膜、晶圓切割膠帶及使用其之半導體裝置 Download PDF

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TWI532812B
TWI532812B TW097147984A TW97147984A TWI532812B TW I532812 B TWI532812 B TW I532812B TW 097147984 A TW097147984 A TW 097147984A TW 97147984 A TW97147984 A TW 97147984A TW I532812 B TWI532812 B TW I532812B
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film
wafer
epoxy resin
resin
adhesive layer
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TW200934850A (en
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洪宗完
金章淳
朴孝淳
柳賢智
高東漢
朱孝叔
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Ｌｇ化學股份有限公司
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Description

膠膜、晶圓切割膠帶及使用其之半導體裝置
本發明係關於一膠膜、一晶圓切割膠帶、以及一半導體裝置。尤其，本發明係關於一種膠膜、一晶圓切割膠帶、以及一包含其之半導體裝置，其中由於黏著層之屈服強度以及拉伸彈性區之斜率受到控制，因此毛邊的發生情形是可預測並得到適當控制。
一般而言，製備半導體晶片的製程包括：於晶圓上形成精細圖案之步驟、進行拋光及晶圓封裝之步驟，以符合最終裝置之標準。其中，封裝的步驟包含：晶圓檢查步驟，係對半導體晶片進行缺陷檢查；切割步驟，係將晶圓切割成各個晶片；黏晶步驟，係將切割完成的晶片黏至電路板或引線框架的載盤上；打線步驟，係利用電連接單元(如電線)，將線路膜層或引線框架的線路圖案與半導體晶片的晶片接觸墊連接；成模步驟，係利用封膠，覆蓋外部，以保護半導體晶片之內部線路及其他部份；修整步驟，係將連接於引線與引線之間的壩條(dam bar)切離；成形步驟，係將引線彎折出預計的形狀；以及成品檢查步驟，係對封裝完成的產品進行檢查。
於該切割步驟中，晶圓係經由使用鑽石刀等工具而切割成一特定的厚度。在此，為了固定晶圓，會將一晶圓切割膠帶於適當溫度下壓合於晶圓的背面(不具有圖案的那面)。
一般而言，如圖2所示，晶圓切割膠帶包含一切割膜以及一黏晶膜，且晶圓切割膠帶係黏附於晶圓的背面(不具有圖案的那面)。在切割的過程中，整個晶圓連同黏晶膜之基膜的一部分會被鑽石砂輪(刀片)切割。
然而，當在上述條件下進行切割時，若有過大的應力或機械性的撞擊產生，則會造成晶圓受損並產生碎片，更會產生毛邊而造成圖案的污染。此外，由於封裝體積受到微型化的需求，晶圓所要求的厚度也受到減小，同時為了增加產出效率而使切割的條件變的越來越嚴苛時，更會經常出現上述的問題。尤其是，當晶圓需求的厚度變薄時，即使毛邊形成的程度並不會造成問題，但當此毛邊沿附至晶片上方時，則會造成缺陷。
基本上，沿附至晶片上方的毛邊主要是由黏晶膜所組成。其原因如下。當切割膜之壓感黏著部位塗覆於基膜上並充分黏附時，即使切割過程中壓感黏著部位及基膜產生毛邊，毛邊沿附至晶片上方的情形亦不多。但是，由於黏晶膜與切割膜之壓感黏著部位是經由裁剪(tailoring)步驟機械性地壓合並切割完全。因此，附著強度則相對減低，而使毛邊沿附至晶片上方的情形增加。為了解決此問題，增加切割膜之壓感黏著部位與黏晶膜之間、以及晶圓與黏晶膜之間的黏著力則顯得重要。然而，當膠膜具有高黏著強度以增加黏著性時，則會具有低的彈性，因此毛邊的量則會因為黏晶膜本身的拉伸而增加。而當黏晶膜具有過高的彈性時，則具有低的附著強度，據此，切割時的晃動情況增加，進而造成毛邊發生情形提高。因此，膠膜彈性的控制為降低毛邊發生情形發生的主要因子。
日本未實審專利公開號2005-330300中揭露有一種黏著樹脂組成物，其於熱固化(180℃，0.2MPa以上)之前，在100℃以下的溫度具有0.5MPa以下的拉伸彈性，且其於熱固化之後，於260℃具有1MPa至10MPa的拉伸彈性。然而，由於考量到切割步驟會在某一時刻產生熱，因此，於評估膜特性時，利用特定升溫速率將熱提供予一樣品以測量彈性之方法會有所限制。此外，由本發明之研究結果可確定，毛邊的發生是受到厚度的影響(即使其具有相同組成與彈性)，且藉由傳統測量彈性的方法將很難控制毛邊的發生。
因此，目前亟需一種新方法，俾能預測且控制黏晶膜的毛邊發生情形，據此，提供一種具有優異之可加工性以及信賴性之半導體裝置是必需的。
本發明係為了解決上述先前技術中所遇到之問題而提出，其提供一膠膜、一晶圓切割膠帶、以及一包含其之半導體裝置，其中膠膜之黏著層之屈服強度以及拉伸彈性區之斜率受到控制，因此毛邊的發生情形可依據膠膜的厚度而得到預測並可受到控制。
為了解決上述問題，本發明係提供一種膠膜，其包括一基膜以及一黏著層，其中該黏著層之厚度為5至50μm時，其屈服強度為20至50gf，且其拉伸彈性區之斜率為30至80gf/mm。
為了解決上述問題，本發明更提供一種晶圓切割膠帶，其包括一切割膜以及一形成於該切割膜之一表面上之本發明之膠膜。
為了解決上述問題，本發明又提供一種半導體晶圓，其中本發明之晶圓切割膠帶之膠膜係貼附於晶圓之一側，且切割膜係固定於晶圓之環狀框架上。
為了解決上述問題，本發明再提供一種半導體裝置，其包括有佈線基板；本發明之黏著層，係貼附於佈線基板之晶片載入側；以及半導體晶片，係載入於該黏著層上。
本發明係藉由控制膠膜之組成以及數量來控制屈服強度以及拉伸彈性區之斜率。且晶圓切割膠帶係包括有具有特殊屈服強度以及拉伸彈性區斜率之膠膜，因此可降低切割步驟中毛邊發生情形，並改善半導體裝置製備過程中之可加工性以及信賴性。
本發明係關於一種膠膜，其包括基膜以及一黏著層，其中，當該黏著層之厚度為5至50μm時，其屈服強度為20至50gf，且其拉伸彈性區之斜率為30至80gf/mm。該屈服強度以及拉伸彈性區之斜率可依據黏著層的厚度而受到控制。當黏著層具有厚的厚度時，屈服強度以及拉伸彈性區之斜率較佳是降低的，而當具有薄的厚度時，屈服強度以及拉伸彈性區之斜率較佳是升高的。
本發明中，黏著層之厚度不同會使毛邊發生情形有所改變。本發明之特點在於，藉由黏著層的厚度而控制屈服強度以及拉伸彈性區之斜率，來使毛邊發生情形得到預測並可受到適當控制。
若該膠膜中黏著層之屈服強度小於20gf，薄膜本身的伸長會造成毛邊發生的情形增加。若其大於50gf，則會由於附著強度的降低而造成毛邊發生的情形增加。此外、若黏著層之拉伸彈性區之斜率小於30gf/mm，薄膜本身的伸長會造成毛邊發生的情形增加。若其大於80gf/mm，則會由於附著強度的降低而造成毛邊發生的情形增加。
在此，「屈服強度」係代表黏著層進行拉伸測試所得到之拉伸曲線中，彈性區域轉換至塑性區域之壓力，且「拉伸彈性區之斜率」係代表拉伸曲線之彈性區域中之斜率。
屈服強度以及拉伸彈性區之斜率可藉由黏著層組成物之組成、比例、以及含量來作控制。該控制黏著層之屈服強度以及拉伸彈性區之斜率的具體方法係詳述於下。
黏著層組成物之組成並無特殊限制。然而，例如，可採用熱塑性樹脂以及熱固性樹脂之混合。在此，熱固性樹脂較佳係與一硬化劑共同使用。該熱塑性樹脂為一有考量到彈性以及初黏特性(initial adhesive characteristic)之需求的組成物，且該熱固性樹脂是一考量到高溫鍵結力以及耐熱性之需求的組成物。
當熱塑性樹脂以及熱固性樹脂以混合之形式使用作為黏著層組成物之組成時，屈服強度以及拉伸彈性區之斜率可藉由控制熱塑性樹脂以及包括有硬化劑之熱固性樹脂之混合比例來調整。當熱塑性樹脂之比例較高時，屈服強度以及拉伸彈性區之斜率則會降低。
為了達到本發明之屈服強度以及拉伸彈性區之斜率，熱塑性樹脂以及包括有硬化劑之熱固性樹脂之混合比例(熱塑性樹脂/熱固性樹脂)較佳為1至5，更佳為1至3。若此比例少於1，膠膜裁剪時之可加工性會下降。若此比例大於5，拉伸量會過多，而導致許多毛邊產生，使耐熱性降低，而造成信賴性的問題。
在此，可使用之熱塑性樹脂舉例包括：丙烯酸共聚物，其包含可與熱固性樹脂交聯之官能基，且其具體實施例包括選自由：包含有羥基之單體(如，甲基丙烯酸2-羥乙酯、甲基丙烯酸2-羥丙酯、甲基丙烯酸2-羥丁酯、甲基丙烯酸4-羥丁酯、乙二醇甲基丙烯酸2-羥乙烯酯(2-hydroxyethylene glycol(meth)acrylate)、或乙二醇甲基丙烯酸2-羥丙烯酯(2-hydroxylpropylene glycol(meth)acrylate))；包含有羧基之單體(如，丙烯酸、甲基丙烯酸、丙烯酸二聚物、伊康酸、或順丁烯二酸)；包含有腈基之單體(如，甲基丙烯腈)；以及包含有縮水甘油基(glycidyl group)之單體(如，甲基丙烯酸環氧丙酯)所組群組中之一或以上之單體。
當使用丙烯酸共聚物作為熱塑性樹脂時，黏著層之屈服強度以及拉伸彈性區之斜率可藉由調整熱塑性樹脂之玻璃轉移溫度來控制。由於其具有低的玻璃轉移溫度，因此可使屈服強度以及拉伸彈性區之斜率降低。
為了得到本發明之屈服強度以及拉伸彈性區之斜率，丙烯酸共聚物之玻璃轉移溫度較佳為-10至30℃，且更佳為0至20℃。若玻璃轉移溫度低於-10℃，拉伸量會過多而使毛邊發生情形增加，因而操作特性(handling property)會劣化。但是，若玻璃轉移溫度超過30℃，彈性會增加，壓感黏著特性會降低，且壓合時缺陷的發生會增多。
此外，丙烯酸共聚物之分子量較佳為100,000至2,500,000。若分子量少於100,000，可能會有耐熱性的問題產生。若分子量大於2,500,000，則會造成填充特性方面的問題。
在此所用之熱塑性樹脂是一種可經由加熱以及使化合物中之官能基反應而硬化之樹脂，其包括環氧樹脂，而較佳係與環氧硬化劑共同使用。此環氧樹脂之具體例子可包括：甲酚醛環氧樹脂(cresol novolac epoxy resin)、雙酚A甲酚醛環氧樹脂(bisphenol A type novolac epoxy resin)、酚醛環氧樹脂(phenol novolac epoxy resin)、四官能環氧樹脂(tetrafunctional epoxy resin)、聯苯環氧樹脂(biphenyl type epoxy resin)、三酚基甲烷環氧樹脂(triphenol methane type epoxy resin)、經烷基修飾之三酚基甲烷環氧樹脂(alkyl modified triphenol methane epoxy resin)、萘環氧樹脂(naphthalene type epoxy resin)、倍環戊二烯環氧樹脂(dicyclopentadiene type epoxy resin)、經倍環戊二烯修飾之酚基環氧樹脂(dicyclopentadiene modified phenol type epoxy resin)、以及其相似物。其可單獨使用或是兩者以上互相混合使用。
此外，環氧硬化劑較佳包括多官能酚樹脂(multifunctional phenol resin)，且有鑒於高溫中之耐濕性，更佳包括經由PCT(壓力鍋測試,Pressure Cooker Test:121℃/100%/2atm)測試處理48小時可具有2.0重量百分比以下之吸濕性之一者。該多官能酚樹脂之具體例子可包括：雙酚A樹脂(bisphenol A type resin)、酚醛樹脂(phenol novolac resin)、甲酚醛樹脂(cresol novolac resin)、雙酚A醛樹脂(bisphenol A type novolac resin)、芳烷基酚樹脂(phenol aralkyl resin)、多官能醛樹脂(multifunctional novolac resin)、倍環戊二烯酚樹脂(dicylcopentadiene phenol novolac resin)、三聚氰胺酚醛樹脂(aminotriazine phenol novolac resin)、聚丁烯酚醛樹脂(polybutadiene phenol novolac resin)、以及其相似物。其可單獨使用或是兩者以上互相混合使用。
再者，當黏著層組成物包括有填充劑時，屈服強度以及拉伸彈性區之斜率可藉由調整填充劑的量來控制。當填充劑的量增加時，屈服強度以及拉伸彈性區之斜率會升高。當本發明之黏著層組成物包含有填充劑時，相對於100重量份之黏著層組成物來計算，所含之填充劑的量較佳為5至20重量份，更佳為8至15重量份。若其含量少於5重量份，則會由於高熱膨脹係數及高毛邊發生率而產生信賴性的問題。若多於20重量份，黏著特性會降低。
關於填充劑之種類，可包含；陶器顆粒(如，氧化矽或鋁)；氫氧化物(如，氫氧化鋁或氫氧化鈣)；以及碳基顆粒、以及其相似物。其可單獨使用或是兩者以上互相混合使用。較佳係使用陶器顆粒，因為其具有優異的絕緣特性、高溫穩定性以及可容易地被加工成具有奈米尺寸之大小。更佳係使用氧化矽。此外，較佳係使用平均顆粒直徑為1至100nm之填充劑。若平均顆粒直徑小於1nm，會造成分散性的問題。若大於100nm，雖然可具有優秀的填充特性，然而會由於彈性增加量不高，因此導致高毛邊發生率。
上述之每個材料皆包含於在此可用的例子中。於製作本發明之薄膜時，本領域可取用之材料皆可使用，本發明並不僅限於上述之材料。
此外，屈服強度以及拉伸彈性區之斜率亦可經由調整製備黏晶膜之乾燥溫度、乾燥速率、風速、空氣體積、或攪拌條件，以及黏著層組成物之組成、比例、或含量來控制。
本發明製備膠膜的步驟並無特殊限制。例如，其可經由以下步驟製得：第一，將黏著層組成物溶解或分散於一溶劑中，以得到一樹脂清漆；第二，將該樹脂清漆塗覆於一基膜上；以及第三，加熱該基膜，以移除溶劑。
上述之第三步驟中，黏著層組成物之組成以及含量係如上述所定義，而用於製備黏著層組成物之清漆溶劑可採用甲基乙基酮(MEK)、丙酮、甲苯、二甲基甲醯胺(DMF)、甲基賽珞蘇(methylcellosolve,MCS)、四氫呋喃(THF)、N-甲基吡咯烷酮(NMP)、及其相似物。當黏著層組成物包含有一填充劑時，可單獨地或組合地使用球磨、珠磨、3輥軋磨、或軋碎，以提升黏著層之分散性。球或珠之材料可包括：玻璃、鋁、鋯、以及其相似物。為了具有較好的分散性，球或珠之材料較佳係使用鋯。
第二步驟中之基膜可使用塑膠膜，如聚對苯二甲酸乙二酯(polyethyleneterephtalate)膜、聚四氟乙烯(polytetrafluoroethylene)膜、聚乙烯膜、聚丙烯膜、聚丁烯膜、聚丁二烯(polybutadiene)膜、氯乙烯共聚物(vinyl chloride copolymer)膜、或聚醯亞胺(polyimide)膜、以及其相似物。此外，基膜之表面可經由一脫膜劑(release agent)處理。使用於脫膜處理之脫膜劑可為以烷、矽、氟、不飽和酯類、聚烯烴、臘、或其相似-為基底之脫膜劑。尤其，考量其耐熱性，較佳可使用烷、矽、或氟-為基底之脫膜劑。
關於將樹脂清漆塗覆至該基膜的方法，可採用習知技術中已知的方法。例如，可使用刮刀塗覆法、噴塗法、凹面塗覆法、簾膜式塗覆法、切角塗覆法(comma coat method)、脣塗法、以及其相似方法。
第三步驟中加熱該基膜以移除溶劑，其加熱較佳係於70至250℃進行5至20分鐘。
本發明亦提供一種晶圓切割膠帶，其包括切割膜；以及形成於該切割膜上之該本發明之膠膜。
該切割膜較佳係包括有基膜；以及形成於該基膜上之壓感黏著層。
本發明之晶圓切割膠帶係伴隨著圖2於下詳述。
切割膜之基膜(40)可為聚乙烯膜、聚丙烯膜、聚四氟乙烯(polytetrafluoroethylene)膜、聚對苯二甲酸乙二酯(polyethyleneterephtalate)膜、聚胺酯(polyurethane)膜、乙基乙烯基丙酮(ethylene vinyl acetone)膜、乙烯丙烯共聚物(ethylene-propylene copolymer)膜、乙烯-丙烯酸乙基共聚物(ethylene-acrylic acid ethyl copolymer)膜、乙烯-丙烯酸甲基共聚物(ethylene-acrylic acid methyl copolymer)膜、或其相似物。若有需要，可進行表面處理，較佳如底漆圖覆、電暈處理、蝕刻處理、以及UV處理。當壓感黏著劑是經由UV照射而固化時，則可選用一具有較佳之透光性之材質。
切割膜之壓感黏著層(30)可為一般以紫外光固化之壓感黏著劑或熱固化之壓感黏著劑。當使用紫外光固化之壓感黏著劑時，其附著強度可藉由將紫外光由基膜側照射而降低，藉此增加壓感黏著劑之黏著吸引力以及玻璃轉移溫度。而當使用熱固化之壓感黏著劑時，附著強度可藉由加熱而降低。
關於製備本發明之晶圓切割膠帶之方法，可採用將切割膜以及膠膜經由熱軋輥層疊(hot roll laminating)之方法、或是將其壓合(laminate pressing)之方法。以連續製程力及效率來看，較佳係使用熱軋輥層疊法。熱軋輥層疊法較佳使用條件為：於10至100℃下，壓力為0.1至10kgf/cm2 。
本發明又提供一種半導體晶圓，其中本發明之晶圓切割膠帶之膠膜係貼附於晶圓之一側，且晶圓切割膠帶之切割膜係固定於晶圓之環狀框架上。
此半導體晶圓可經由將晶圓切割膠帶之膠膜於0至180℃之層疊溫度貼附於半導體晶圓之背面，並將晶圓切割膠帶之切割膜固定於晶圓之環狀框架上來完成。
本發明再提供一種半導體裝置，其包括：佈線基板；本發明之膠膜，係貼附於佈線基板之晶片載入側；以及載入於膠膜上之半導體晶片。
製備半導體裝置之步驟係如下所述。
利用切割裝置，將一黏附有上述晶圓切割膠帶之半導體晶圓切分成各別晶片。
接著，若切割膜為紫外光固化性壓感黏著劑時，將紫外光由基膜側照射使其固化。而若切割膜是熱固性壓感黏著劑時，則藉由升溫而固化。在經由紫外光固化或是熱固化後之壓感黏著劑中，黏著劑之附著強度會降低，因此可使得後續的晶片取出步驟較容易進行。此時，若有需要，可將晶圓切割膠帶進行適當的延展。當有施行延展步驟時，晶片之間的間距可被拉開，而使得取出步驟容易進行，且黏著層以及壓感黏著層間產生扭動，進而改善取出特性。接著，進行晶片取出步驟。
同時，半導體晶圓與晶圓切割膠帶之壓感黏著層可由晶圓切割膠帶之黏著層卸下，以得到僅黏附有黏著層之晶片。將該黏附有黏著層之晶片黏附於半導體之基板。其晶片之黏著溫度通常為100至180℃，黏著時間為0.5至3秒，黏著壓力為0.5至2kgf/cm2 。當此步驟中是使用一彎曲有機佈線基板時，則其必須具有可填充特性。
完成此步驟後，經由打線以及成模則可得到半導體裝置。
半導體裝置的製備並不僅限於上述步驟，亦可為包含有任何步驟，且可更改步驟之先後順序。例如，其可經由壓感黏著層固化-切割-延展之順序、或是切割-延展-壓感黏著層固化之順序來進行。晶片貼附步驟後，可更包括加熱或冷卻步驟。
以下係藉由特定的具體實施例說明本發明之實施方式。然而，實施例僅係為了方便說明而舉例而已，本發明之範圍非僅限於實施例。
實施例1
將含有66重量份之芳香基環氧樹脂(醛型環氧樹脂，軟化點80℃)、34重量份作為環氧樹脂之硬化劑的酚樹脂(酚醛樹脂，軟化點90℃)、200重量份含環氧基之丙烯酸共聚物(SA-55，由LG Chem,Ltd.取得，Tg=9℃，平均重量分子量500,000)、0.3重量份之硬化加速劑(2-苯基-4-甲基咪唑(2P4MZ)、以及45重量份作為填充劑之氧化矽(熔融氧化矽，平均顆粒直徑75nm)之組成物於甲基乙基酮中攪拌混合，以製得一清漆。
將製得之清漆塗覆至厚度為38μm之基膜(聚酯離型膜，RS-21G，由SKC取得)上，並於110℃乾燥3分鐘，以製得膜厚為20μm之膠膜。
實施例2
除了膜厚更改為10μm外，使用如實施例1之方法製備薄膜。
實施例3
除了以玻璃轉移溫度為15℃之熱塑性丙烯酸樹脂取代且使用量更改為400重量份外，使用如實施例1之方法製備薄膜。
實施例4
除了將熱塑性丙烯酸樹脂之使用量更改為150重量份，並將作為填充劑之氧化矽之使用量更改為20重量份外，使用如實施例1之方法製備薄膜。
比較例1
除了以玻璃轉移溫度為-15℃之熱塑性丙烯酸樹脂取代外，使用如實施例1之方法製備薄膜。
比較例2
除了不添加填充劑外，使用如實施例1之方法製備薄膜。
比較例3
除了將熱塑性丙烯酸樹脂之使用量更改為50重量份外，使用如實施例1之方法製備薄膜。
[測量方法]
1.常溫下張力之測量
將黏晶膜沿著塗覆方向切割為10mm x 50mm(寬x長)的尺寸。於切下的樣本中心留下25mm的大小，並將二端黏貼膠帶。將黏有膠帶之二端固定於張力測量儀上，並以0.3mm/秒的速率進行拉伸。經由得到之張力曲線，可計算出彈性區域之斜率及彈性區域與塑性區域間之轉折點的屈服強度。在此，用來測量張力的測量儀(Texture Analyzer)是由Stable Micro System Company(England)所取得。
2.毛邊測量
將切割膜(基膜100μm,壓感黏著部位10μm)壓合至黏晶膜，並進行切割，以製備晶圓切割膠帶。將所得之樣本貼附至厚度為75μm之晶圓，並接著進行以下切割步驟。於切割步驟中，晶片尺寸為5 x 5mm，而切割深度係達所有的晶圓、黏晶膜、切割膜之壓感黏著層，並切割至基膜之20μm深的部位。切割完成後，計算100片晶片之上方毛邊發生情形。切割過程中，刀片前進速率為40mm/秒，且刀片之旋轉速率為40,000rpm。
上述實施例以及比較例之每一薄膜所測得之屈服強度、拉伸彈性區之斜率、以及切割後之毛邊發生情形結果係列於下表1。
1．．．半導體晶片
10．．．膠膜之基膜
20．．．黏晶膜之黏著層
30．．．切割膜之壓感黏著層
40．．．切割膜之基膜
50．．．佈線基板
圖1係本發明一實施態樣之膠膜(黏晶膜)剖視圖。
圖2係本發明一實施態樣之晶圓切割膠帶剖視圖。
圖3係本發明一實施態樣之半導體裝置剖視圖。
圖4係對於黏著層進行拉伸測試所得到之拉伸曲線，其顯示出屈服強度以及拉伸彈性區之斜率。
10．．．膠膜之基膜
20．．．黏晶膜之黏著層

Claims (12)

  1. 一種膠膜，其係包括一基膜以及一黏著層，其中，該黏著層包括一熱塑性樹脂以及包括一硬化劑之一熱固性樹脂，其中，以整個組成物為100重量份來計算，該黏著層包括5至20重量份之填充劑，其中，該熱塑性樹脂以及該包括硬化劑之熱固性樹脂之混合比例(熱塑性樹脂/熱固性樹脂)為1至5，其中，當該黏著層之厚度為5至50μm時，其屈服強度為20至50gf，且其拉伸彈性區之斜率為30至80gf/mm。
  2. 如申請專利範圍第1項所述之膠膜，其中，該熱塑性樹脂係為一丙烯酸共聚物，其包括一可與該熱固性樹脂交聯之官能基。
  3. 如申請專利範圍第2項所述之膠膜，其中，該丙烯酸共聚物包括選自由：甲基丙烯酸2-羥乙酯、甲基丙烯酸2-羥丙酯、甲基丙烯酸2-羥丁酯、甲基丙烯酸4-羥丁酯、乙二醇甲基丙烯酸2-羥乙烯酯(2-hydroxyethylene glycol(meth)acrylate)、或乙二醇甲基丙烯酸2-羥丙烯酯(2-hydroxylpropylene glycol(meth)acrylate)、丙烯酸、甲基丙烯酸、丙烯酸二聚物、伊康酸、順丁烯二酸、甲基丙烯腈、以及甲基丙烯酸環氧丙酯所組群組中一者或以上之單體。
  4. 如申請專利範圍第2項所述之膠膜，其中，該丙烯酸共聚物之玻璃轉移溫度為-10至30℃。
  5. 如申請專利範圍第2項所述之膠膜，其中，該丙烯酸共聚物之分子量為100,000至2,500,000。
  6. 如申請專利範圍第1項所述之膠膜，其中，該熱固性樹脂係為一環氧樹脂。
  7. 如申請專利範圍第6項所述之膠膜，其中，該環氧樹脂係選自由：甲酚醛環氧樹脂(cresol novolac epoxy resin)、雙酚A甲酚醛環氧樹脂(bisphenol A type novolac epoxy resin)、酚醛環氧樹脂(phenol novolac epoxy resin)、四官能環氧樹脂(tetrafunctional epoxy resin)、聯苯環氧樹脂(biphenyl type epoxy resin)、三酚基甲烷環氧樹脂(triphenol methane type epoxy resin)、經烷基修飾之三酚基甲烷環氧樹脂(alkyl modified triphenol methane epoxy resin)、萘環氧樹脂(naphthalene type epoxy resin)、倍環戊二烯環氧樹脂(dicyclopentadiene type epoxy resin)、以及經倍環戊二烯修飾之酚基環氧樹脂(dicyclopentadiene modified phenol type epoxy resin)所組群組中之一者或以上。
  8. 如申請專利範圍第1項所述之膠膜，其中，該填充劑係選自由：氧化矽、氧化鋁、氫氧化鋁、氫氧化鈣、以及碳基顆粒所組群組中之一者或以上。
  9. 如申請專利範圍第1項所述之膠膜，其中，該填充劑之平均顆粒直徑為1至100nm。
  10. 一種晶圓切割膠帶，係包括：一切割膜；以及 如申請專利範圍第1至9項中任一項所述之該膠膜，其係形成於該切割膜之一側上。
  11. 一種半導體晶圓，其中，如申請專利範圍第10項所述之該晶圓切割膠帶之該膠膜係貼附於該晶圓之一側，且該切割膜係固定於一晶圓之環狀框架上。
  12. 一種半導體裝置，係包括：一佈線基板；如申請專利範圍第1至9項中任一項所述之該膠膜，其係貼附於該佈線基板之晶片載入側；以及一半導體晶片，係載入於該膠膜上。
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TWI773727B (zh) * 2017-01-30 2022-08-11 日商三井化學東賽璐股份有限公司 零件製造用膜、零件製造用具及零件製造方法

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EP2193176A1 (en) 2010-06-09
TW200934850A (en) 2009-08-16
WO2009075472A1 (en) 2009-06-18
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