TWI527919B - Ag alloy film for reflective electrode and reflective electrode - Google Patents
Ag alloy film for reflective electrode and reflective electrode Download PDFInfo
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- TWI527919B TWI527919B TW101149799A TW101149799A TWI527919B TW I527919 B TWI527919 B TW I527919B TW 101149799 A TW101149799 A TW 101149799A TW 101149799 A TW101149799 A TW 101149799A TW I527919 B TWI527919 B TW I527919B
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- 229910001316 Ag alloy Inorganic materials 0.000 title claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 19
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 238000005477 sputtering target Methods 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 229910007563 Zn—Bi Inorganic materials 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 3
- 229910001152 Bi alloy Inorganic materials 0.000 claims 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 description 26
- 238000007254 oxidation reaction Methods 0.000 description 26
- 230000007547 defect Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000011978 dissolution method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- YYJUXSGXHHPBTK-UHFFFAOYSA-N 2-chloro-3-(3-chloro-2-methylphenyl)propanenitrile Chemical compound CC1=C(Cl)C=CC=C1CC(Cl)C#N YYJUXSGXHHPBTK-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
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Description
本發明特別有關電極用Ag合金膜及反射電極,係有關一種表現出與Ag膜幾近同水準之低電性電阻率及高反射率,且耐氧化性優良反射電極用Ag合金膜、及使用該Ag合金膜之反射電極、及適於形成上述Ag合金膜之Ag合金濺鍍靶材、及具備含有上述反射電極的元件之液晶顯示器等。
另,本發明之反射電極中,亦包含由構成該反射電極的膜所成之配線。
Ag膜達一定膜厚以上會表現出對可視光的高反射率,且能確保很低的電性電阻,故備受期待運用在液晶顯示器或有機發光半導體顯示器等之反射電極或配線。
然而,由於Ag膜在高溫下容易劣化,故上述顯示器的製造過程中,在承受熱歷程時,可能會有損及上述高反射率或低電性電阻等優良特性之問題。對於這樣的Ag膜問題,習知已有各種提案。
舉例來說,專利文獻1中揭示,從Bi及Sb所構成之群組中選擇1種或2種元素,做成含有合計量0.01~4原子%之Ag合金膜,藉此,能夠維持Ag原本的高反射率,同時會抑制Ag的凝聚或晶粒成長,抑制反射率隨時間經過而降低。此外,專利文獻2中揭示,構成有機發光
半導體顯示器用的反射陽極電極之Ag基合金膜中,若使Nd含有0.01~1.5原子%、或使Bi含有0.01~4原子%,則Nd與Bi會發揮防止Ag凝聚之作用,能夠充分避免有機發光半導體裝置的暗點現象。
又,專利文獻3中揭示,先使Ag中含有Bi,藉此抑制Ag膜的晶粒成長或凝聚,並添加該Bi與V、Ge、Zn使其滿足規定式子,便能得到高反射率。
專利文獻1:日本國特開2004-126497號公報
專利文獻2:日本國特開2010-225586號公報
專利文獻3:國際公開第2009/041529號
不過,上述顯示器的製造過程中,將Ag膜形成後,為了洗淨,一般會對該Ag膜進行UV照射或O2電漿處理,但這些處理會有使Ag氧化而變黑的問題。該變黑情形,是由於UV照射時或O2電漿照射時會產生反應性高的氧自由基,該氧自由基與Ag反應而發生。
特別是,在將光從與基板相反方向取出之上發光型(Top Emission)OLED顯示器的情形中,會在Ag膜單層所構成之反射電極或含有Ag膜的反射電極上層積有機材料,但為了確保該反射電極與有機材料之間的電性接合,
在上述顯示器的製造過程中,必然會在有機材料層積前,對上述反射電極表面施以上述UV照射或O2電漿處理以將其洗淨。為了抑制該洗淨處理導致反射電極劣化(特別是Ag膜氧化而變黑),所採用之手段為,將ITO膜等透明導電膜或氧化膜形成於上述Ag膜的相鄰上方或相鄰下方,以保護Ag膜。但,即使在形成上述ITO膜等的情形下,會因該ITO膜等的膜厚不均一或存在針孔(Pinhole)等,無法充分保護Ag膜,而會發生上述Ag膜之劣化。故,需要求Ag膜本身對於上述洗淨具有優良耐性(以下或稱耐氧化性)。
亦即,針對Ag系膜,需要求其具備反射電極或配線所必須之低電性電阻率及高反射率,且上述耐氧化性優良。但,過去所提案之各種Ag合金膜,無法滿足上述所有特性。
本發明係著眼於上述各樣情況而創作者,其目的特別在於實現一種低電性電阻率及高反射率與Ag膜幾近同水準,且耐氧化性比Ag膜或習知Ag合金膜還優良之反射電極用Ag合金膜、及包含該Ag合金膜之反射電極。
本發明提供以下之反射電極用Ag合金膜、反射電極、Ag合金濺鍍靶材、液晶顯示器、有機發光半導體顯示器、有機發光半導體照明、無機發光半導體顯示器、無機發光半導體照明、觸控面板、投影式顯示器及LED元
件。
(1)一種反射電極,其特徵為:包含:反射電極用Ag合金膜,含有0.1~2.0原子%之,從In及Zn所構成的群組中選擇之至少1種,和0.01~1.0原子%之Bi;及ITO或IZO所構成之透明導電膜;在前述Ag合金膜的相鄰上方,前述透明導電膜係以膜厚5~20nm之範圍形成,(但,滿足下述式(1),亦即前述In及Zn當中僅含有Zn之Ag-Zn-Bi合金膜除外:7×〔A〕+13×〔Bi〕≦8...(1)
〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)〕)。
(2)一種Ag合金濺鍍靶材,屬於用來形成第(1)項的Ag合金膜之濺鍍靶材,其特徵為:由Ag合金所構成,該Ag合金係含有0.1~2.0原子%之,從In及Zn所構成之群組中選擇之至少1種,和0.01~1.0原子%之Bi,(但,滿足下述式(1),亦即前述In及Zn當中僅含有Zn之Ag-Zn-Bi合金濺鍍靶材除外:7×〔A〕+13×〔Bi〕≦8...(1)
〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)〕)。
(3)一種具備第(1)項之反射電極之液晶顯示
器。
(4)一種具備第(1)項之反射電極之有機發光半導體顯示器或有機發光半導體照明。
(5)一種具備第(1)項之反射電極之無機發光半導體顯示器或無機發光半導體照明。
(6)一種具備第(1)項之反射電極之觸控面板。
(7)一種具備第(1)項之反射電極之投影式顯示器。
(8)一種具備第(1)項之反射電極之LED元件。
按照本發明,能得到一種Ag合金膜,其表現出與Ag膜幾近同水準之低電性電阻率及高反射率,且耐氧化性比Ag膜或習知Ag合金膜還優良。其結果,當將本發明之Ag合金膜例如運用在上述上發光型OLED顯示器之反射電極的情形下,由於其對UV照射等洗淨表現出優良的耐性,故能實現一種展現優良顯示特性之顯示器。
本發明團隊如前述般,係反覆專注研究,以求得到一種Ag合金膜,其即使運用在製造過程中於反射電極形成後具有UV照射等洗淨工程的顯示器之反射電極,也能表
現出優良的耐氧化性,且表現出與Ag膜幾近同水準之低電性電阻率及高反射率。其結果發現,作為構成Ag合金之合金元素,在各種合金元素當中,特別是以In及Zn非常有助於同時確保實現與Ag膜幾近同水準之低電性電阻率及高反射率、及優良之耐氧化性,進而完成本發明。
為了確實獲得上述效果,可使其分別單獨含有In、Zn,或是亦可含有兩元素,其含有量(由複數個元素構成時係指合計量,以下同)訂為0.1原子%以上。以0.3原子%以上為佳,0.5原子%以上較佳。但,如果In或Zn的含有量過多,那麼電性電阻率會變得過高,或是反射率容易降低,故本發明中,將上述含有量訂為2.0原子%以下。以1.5原子%以下為佳,1.3原子%以下較佳,而從確保低電性電阻率或高反射率的觀點看來,訂為1.0原子%以下更佳。
本發明Ag合金膜的成分如上所述,剩餘部分由Ag及不可避免雜質(例如Si、Fe、C、O(氧)等在0.01重量%以下)所構成,又,藉由添加Bi,能進一步使耐氧化性提升。
為了使Bi充分發揮上述效果,使Bi含有0.01原子%以上為佳。較佳為0.05原子%以上。但,如果Bi含有過多,那麼如同上述In等般,會招致電性電阻率增大或反射率降低,故Bi量訂為1.0原子%以下為佳。0.8原子%以下較佳,0.5原子%以下更佳。
另,本發明與專利文獻3所揭示之技術相異,為了滿足耐氧化性等所有特性,其特徵為,在各種合金元素當中特別需要In及/或Zn。亦即,上述專利文獻3主要是有關反射率提升之技術,並未揭示In或Zn以及Bi對於UV照射或O2電漿處理等洗淨之耐性提升非常有效。鑑此,為了避免上述專利文獻3揭示之Ag-Bi-Zn合金膜與本發明重複,係將滿足下述式(1)者,亦即含有Bi且在前述In及Zn當中僅含有Zn之Ag-Zn-Bi合金膜,排除在本發明之外。
7×〔A〕+13×〔Bi〕≦8‧‧‧(1)
〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)。〕
本發明之Ag合金膜,其膜厚訂為30~200nm之範圍為佳。藉由將膜厚訂為30nm以上,能夠使Ag合金膜的穿透率幾近為零,以確保高反射率。較佳為50nm以上。另一方面,如果Ag合金膜的膜厚值太高,那麼會招致反射電極上層積的膜剝離,或容易招致形成Ag合金膜時花費時間而生產性降低,故訂為200nm以下為佳。較佳為150nm以下。
上述Ag合金膜,理想是以濺鍍法使用濺鍍靶材來形成。薄膜的形成方法例如有噴墨塗布法、真空蒸鍍法、濺鍍法等,其中濺鍍法的合金化容易性或生產性、膜厚均一性較優良,故較佳。
此外,欲以上述濺鍍法形成上述Ag合金膜,那麼作
為上述濺鍍靶材,只要從In及Zn所構成之群組中選擇至少1種,使其含有0.1~2.0原子%,且使用與所需之Ag合金膜同一成分之Ag合金所構成之Ag合金濺鍍靶材,便不必擔心會有成分偏差,能夠形成所需成分組成之Ag合金膜。
欲形成更含有Bi之Ag合金膜時,只要使用更含有0.01~1.0原子%的Bi之靶材即可。但,針對該濺鍍靶材,同樣地,將滿足下述式(1)之合金濺鍍靶材,亦即含有Bi且在In及Zn當中僅含有Zn之Ag-Zn-Bi合金濺鍍靶材排除在外。
7×〔A〕+13×〔Bi〕≦8‧‧‧(1)
〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)。〕
上述濺鍍靶材之製作方法,例如有真空溶解法或粉末燒結法,但以真空溶解法來製作,從能夠確保靶材面內成分或組織均一性的觀點看來較為理想。
本發明中使用之基板並未特別限定,例如有由玻璃或PET等樹脂等所構成者。
又,本發明中,作為反射電極,還包括在上述基板上(不限定於相鄰上方,隔著TFT或作為基底之ITO膜等透明導電膜之情形亦包括在內)形成Ag合金膜,且在Ag合金膜的相鄰上方(與基板相反側的相鄰上方)層積有透明導電膜(較佳為ITO或IZO)者。上述透明導電膜之成膜方法並未特別限定,以一般進行條件(例如濺鍍法)成
膜即可。
透明導電膜的膜厚亦可採用一般範圍,例如訂為5nm以上(較佳為7nm以上)20nm以下(較佳為15nm以下)之範圍。
上述透明導電膜形成後,亦可施以熱處理(後退火,Post-annealing)。後退火溫度以200℃以上為佳,250℃以上較佳,以350℃以下為佳,300℃以下較佳。後退火時間以10分鐘左右以上為佳,15分鐘左右以上較佳,以120分鐘左右以下為佳,60分鐘左右以下較佳。
本發明之Ag合金膜,其特性滿足電性電阻率:6.0μΩcm以下。電性電阻率以5.0μΩcm以下為佳,4.5μΩcm以下較佳,4.0μΩcm以下更佳。
此外,Ag合金膜單膜(膜厚100nm以上)對於波長550nm的(光)反射率為95.0%以上。以96.0%以上為佳,96.5%以上較佳。
又,模擬反射電極之一例,在上述Ag合金膜的相鄰上方層積有透明導電膜(例如ITO膜)之層積膜(以250℃保持1小時之熱處理後),對於波長550nm的(光)反射率為95.0%以上。以95.5%以上為佳,96.0%以上較佳。
又,本發明之Ag合金膜,作為耐氧化性優良之指標,如後述實施例所示般,對含有Ag合金膜之層積體進行UV照射後,係滿足一定單位面積(120mm×90mm)之缺陷數(黑點數)在500個以下(350個以下為佳,200
個以下較佳),且以Ag膜之缺陷面積(11618像素)為基準時,缺陷面積在5000像素以下(4600像素以下為佳,4000像素以下較佳,3000像素以下更佳)。
具備本發明反射電極(具體而言為具備含有本發明反射電極之元件)之物,例如有液晶顯示器、有機發光半導體顯示器(例如上發光型OLED顯示器)、有機發光半導體照明、無機發光半導體顯示器、無機發光半導體照明、觸控面板、投影式顯示器、LED元件。
以下舉出實施例進一步具體說明本發明,但本發明當然不因下述實施例而受限,在切合前、後文要旨之範圍內,自可適當加以變更並實施,而它們均包含於本發明之技術範圍內。
在玻璃基板(Corning公司製無鹼玻璃# 1737、直徑:50mm、厚度:0.7mm)上,將表1所示成分之純Ag膜或Ag合金膜(以下或統稱為Ag合金膜,膜厚均為100nm,單層膜),利用DC磁控管濺鍍裝置,以濺鍍法成膜。此時之成膜條件如下所述。
基板溫度:室溫
成膜功率:DC250W
Ar氣體壓力:1~3mTorr
極間距離:55mm
成膜速度:7.0~8.0nm/sec
到達真空度:1.0×10-5Torr以下
又,上述成膜中,作為濺鍍靶材,係使用純Ag靶材(純Ag膜成膜時)、或使用藉由真空溶解法製作之,與下述表1所示膜成分為同成分之Ag合金濺鍍靶材、或使用在純Ag靶材的濺鍍面上,黏著構成下述表1所示膜的金屬元素所成之金屬晶片而成之複合靶材(尺寸均為直徑4英吋)。
利用上述方法得到之Ag合金膜,測定電性電阻率、Ag合金膜對於波長550nm的(光)反射率、和ITO膜之層積膜(熱處理後)對於波長550nm的(光)反射率、及UV處理後之缺陷發生頻度。測定方法詳如下述。另,所得到的Ag合金膜之成分,係利用ICP發光分光分析裝置(島津製作所製,ICP發光分光分析裝置「ICP-8000型」),以定量分析確認。
針對上述得到的Ag合金膜,以4探針法測定電性電阻率。當電性電阻率在6.0μΩcm以下時,將電性電阻率評價為低。
Ag合金膜(單層膜)對於波長550nm可視光之反射
率,係利用分光光度計(日本分光公司製V-570分光光度計),測定絕對反射率而求得。而當該反射率在95.0%以上時,評價為高反射率。
在Ag合金膜上使ITO膜層積,接著熱處理後,再測定其反射率。詳言之,在上述Ag合金膜上更使用ITO靶材,相對於Ar氣體一面導入10%左右之O2氣體,一面以DC磁控濺鍍法,依基板溫度:25℃、壓力:0.8mTorr、DC功率:150W之條件,使ITO膜(膜厚:7nm)形成,得到層積體(玻璃基板\Ag膜:100nm\ITO膜:7nm)。接著針對該層積體,於紅外線燈熱處理爐(氮氣環境)中以250℃保持1小時施以熱處理,以模擬製造過程中之後退火,得到層積膜樣本。接著,如同上述Ag合金膜般,測定層積膜樣本的反射率(對於波長550nm可視光之反射率),當該反射率在95.0%以上時,評價為高反射率。
耐氧化性之評價中,係利用模擬為反射電極之上述層積膜樣本(在Ag合金膜上形成ITO膜,更施以熱處理之樣本),針對上述層積膜樣本,依下述條件施以UV處理。接著,UV處理後之層積膜缺陷(因Ag氧化所致之黑色缺陷)的個數及面積,係利用soft imagin system公司
之analySIS,對50倍攝影之光學顯微鏡照片做圖像處理並計測之。而當每單位面積(120mm×90mm)發生之缺陷數在500個以下,且以No.1(純Ag膜)的缺陷面積(11618像素)為基準時,缺陷面積為5000像素以下時,評價其耐氧化性優良。
低壓水銀燈
中心波長:254nm
UV照度:40mW/cm2
照射時間:30min
該些結果如表1所示。
根據表1可做下述解讀。亦即,可以看出,如本發明所規定之,含有規定量的In及/或Zn之Ag合金膜(No.2~4及8~10),其電性電阻率低,且成膜直後的
Ag合金膜(單層膜)反射率、及更層積了ITO膜之層積膜(熱處理後)反射率皆高,再者UV處理後之缺陷亦受到抑制,耐氧化性優良。
特別是將No.1(Ag膜)與No.2或No.9比較即可看出,相對於Ag,藉由含有少量的In或Zn,能夠不使電性電阻率增大且不使反射率降低,而能顯著提高耐氧化性。
相較於此,Ag膜(No.1),雖然其Ag合金膜(單層膜)或層積膜的反射率皆高,且電性電阻率亦相當小,但耐氧化性明顯較差。作為參考,此No.1經UV處理後的層積體表面之光學顯微鏡照片揭示於圖1。從該圖1中可看出,Ag膜的情形下,能觀察到多數個因Ag氧化導致之黑色缺陷。
此外,如No.5~7與No.11~15所示,相對於Ag,當In或Zn含有過多時,電性電阻率會有相當的上昇,且反射率有降低的傾向。
又如No.16~23所示,以In或Zn以外之元素作為合金元素來做成Ag合金膜時,有些無法確保低電性電阻率或高反射率,有些則無法確保耐氧化性,故無法確保低電性電阻率、高反射率及耐氧化性等所有特性。
亦即,如No.16~18所示,當含有Ge時,無法確保低電性電阻率及高反射率。又,當Ge量較多(No.18)時,耐氧化性亦會降低,無法確保任一種特性。
如No.19~21所示,當含有Cu時,會呈現耐氧化性差,或是層積膜的反射率變低之結果。
如No.22所示,含有Ge與Bi時,呈現耐氧化性明顯變差之結果。又如No.23所示,即使含有多數規定外之元素,也無法確保耐氧化性,且Ag合金膜(單層膜)或層積膜的反射率亦變低。
另,有些例子顯現出,與Ag合金膜單層相比,層積了ITO膜且熱處理後者其反射率較高(例如No.2~4等),但可認為這是因為熱處理促進了分布於Ag合金膜全體之合金元素的濃化、凝聚,相對地使Ag的露出面積增加的緣故。
以上已說明本發明之實施形態,但本發明並不為上述實施形態所限定,以申請專利範圍所記載為限,可進行各種變更並予實施。
本申請案係以2011年12月27日申請之日本發明專利申請案(特願2011-285922)為基礎,其內容援引於此以作為參照。
按照本發明,能得到一種Ag合金膜,其表現出與Ag膜幾近同水準之低電性電阻率及高反射率,且耐氧化性比Ag膜或習知Ag合金膜還優良。其結果,當將本發明之Ag合金膜例如運用在上述上發光型OLED顯示器之反射電極的情形下,由於其對UV照射等洗淨表現出優良的耐性,故能實現一種展現優良顯示特性之顯示器。
〔圖1〕圖1為實施例中No.1於UV處理後其層積體表面的光學顯微鏡照片(倍率:50倍)。
Claims (8)
- 一種反射電極,其特徵為:包含:反射電極用Ag合金膜,含有0.1~2.0原子%之,從In及Zn所構成的群組中選擇之至少1種,和0.01~1.0原子%之Bi;及ITO或IZO所構成之透明導電膜;在前述Ag合金膜的相鄰上方,前述透明導電膜係以膜厚5~20nm之範圍形成,(但,滿足下述式(1),亦即前述In及Zn當中僅含有Zn之Ag-Zn-Bi合金膜除外:7×〔A〕+13×〔Bi〕≦8...(1)〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)〕)。
- 一種Ag合金濺鍍靶材,屬於用來形成申請專利範圍第1項的Ag合金膜之濺鍍靶材,其特徵為:由Ag合金所構成,該Ag合金係含有0.1~2.0原子%之,從In及Zn所構成之群組中選擇之至少1種,和0.01~1.0原子%之Bi,(但,滿足下述式(1),亦即前述In及Zn當中僅含有Zn之Ag-Zn-Bi合金濺鍍靶材除外:7×〔A〕+13×〔Bi〕≦8...(1)〔上述式(1)中,〔A〕為Zn之含有率(原子%),〔Bi〕為Bi之含有率(原子%)〕)。
- 一種液晶顯示器,其特徵為:具備申請專利範圍 第1項之反射電極。
- 一種有機發光半導體顯示器或有機發光半導體照明,其特徵為:具備申請專利範圍第1項之反射電極。
- 一種無機發光半導體顯示器或無機發光半導體照明,其特徵為:具備申請專利範圍第1項之反射電極。
- 一種觸控面板,其特徵為:具備申請專利範圍第1項之反射電極。
- 一種投影式顯示器,其特徵為:具備申請專利範圍第1項之反射電極。
- 一種LED元件,其特徵為:具備申請專利範圍第1項之反射電極。
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JP5522599B1 (ja) * | 2012-12-21 | 2014-06-18 | 三菱マテリアル株式会社 | Ag合金スパッタリングターゲット |
WO2014208341A1 (ja) * | 2013-06-26 | 2014-12-31 | 株式会社神戸製鋼所 | 反射電極用または配線電極用Ag合金膜、反射電極または配線電極、およびAg合金スパッタリングターゲット |
JP6384147B2 (ja) * | 2013-07-11 | 2018-09-05 | 三菱マテリアル株式会社 | 半透明Ag合金膜 |
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JP6176224B2 (ja) | 2013-12-25 | 2017-08-09 | 日亜化学工業株式会社 | 半導体素子及びそれを備える半導体装置、並びに半導体素子の製造方法 |
JP6172230B2 (ja) * | 2014-09-18 | 2017-08-02 | 三菱マテリアル株式会社 | Ag合金スパッタリングターゲット、Ag合金膜およびAg合金膜の製造方法 |
CN105810842B (zh) * | 2014-12-29 | 2019-01-11 | 昆山国显光电有限公司 | 有机发光二极管的阳极结构 |
JP6624930B2 (ja) | 2015-12-26 | 2019-12-25 | 日亜化学工業株式会社 | 発光素子及びその製造方法 |
JP6683003B2 (ja) | 2016-05-11 | 2020-04-15 | 日亜化学工業株式会社 | 半導体素子、半導体装置及び半導体素子の製造方法 |
JP6720747B2 (ja) | 2016-07-19 | 2020-07-08 | 日亜化学工業株式会社 | 半導体装置、基台及びそれらの製造方法 |
CN110618550B (zh) * | 2019-09-25 | 2023-09-08 | 京东方科技集团股份有限公司 | 显示面板及其制造方法 |
JP6908164B2 (ja) * | 2019-12-02 | 2021-07-21 | 三菱マテリアル株式会社 | Ag合金膜 |
CN114761608A (zh) * | 2019-12-02 | 2022-07-15 | 三菱综合材料株式会社 | Ag合金膜及Ag合金溅射靶 |
CN115172561A (zh) * | 2021-07-22 | 2022-10-11 | 厦门三安光电有限公司 | 发光二极管及其制备方法 |
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