TWI520795B - Substrate cleaning apparatus - Google Patents

Description

基板洗淨裝置 Substrate cleaning device

本發明係關於一種基板洗淨裝置，其係藉由供應譬如純水或化學溶液之清洗液至基板而清洗該基板，並乾燥經洗淨之基板。 The present invention relates to a substrate cleaning apparatus which cleans a substrate by supplying a cleaning liquid such as pure water or a chemical solution to the substrate, and dries the washed substrate.

於製造半導體裝置之製程中，洗淨基板是用來增加產品良率之重要程序。此基板洗淨程序例如於基板拋光製程後實施，以從基板去除不想要的碎粒。附圖之第28和29圖顯示基板洗淨裝置之例子。如第28和29圖所示，基板洗淨裝置具有：基板固持機構100，係組構成用以固持基板W；馬達101，係組構成用以旋轉該基板固持機構100；固定蓋102，設在基板W之周圍；以及噴嘴103，用來供應純水作為清洗液至該基板W之表面以便洗淨該基板W。於基板W之清洗期間，基板W係以低速旋轉，且純水係被供應至基板W之表面。於乾燥基板W之期間，基板W例如以大約1500轉/分鐘(min^-1)之高速旋轉，以將純水甩離基板W之表面。從基板W去除之純水由固定蓋102捕獲並回收。 In the process of manufacturing a semiconductor device, cleaning the substrate is an important procedure for increasing the yield of the product. This substrate cleaning process is performed, for example, after the substrate polishing process to remove unwanted debris from the substrate. Figures 28 and 29 of the accompanying drawings show examples of substrate cleaning devices. As shown in FIGS. 28 and 29, the substrate cleaning device has a substrate holding mechanism 100 configured to hold the substrate W, a motor 101 configured to rotate the substrate holding mechanism 100, and a fixed cover 102 disposed at The periphery of the substrate W; and the nozzle 103 for supplying pure water as a cleaning liquid to the surface of the substrate W to wash the substrate W. During the cleaning of the substrate W, the substrate W is rotated at a low speed, and pure water is supplied to the surface of the substrate W. During the drying of the substrate W, the substrate W is rotated, for example, at a high speed of about 1500 rpm (min ^-1 ) to separate the pure water from the surface of the substrate W. The pure water removed from the substrate W is captured and recovered by the fixed cover 102.

當純水衝撞於固定蓋102上時，純水可能會彈回成小 水滴，而再附著於基板W之表面。此外，基板W之高速旋轉會在固定蓋102內產生旋轉氣流。此旋轉氣流係載送純水之細微水滴(亦即，純水之霧氣(mist))，而該霧氣亦會附著於基板W之表面。附著於基板W之表面之純水之水滴和霧氣會在基板上形成水印(water mark)。這些水痕可能不利地影響形成在基板W上之裝置，而造成產品良率的減少。使用化學溶液而非純水作為清洗液時，亦可能由於相同原因而引致基板W之背部污染(back contamination)。因此，防止基板之水痕和背部污染係益形重要。 When pure water hits the fixed cover 102, pure water may bounce back into small Water droplets are attached to the surface of the substrate W. Further, the high speed rotation of the substrate W generates a swirling airflow in the fixed cover 102. This vortex flow carries fine water droplets of pure water (i.e., mist of pure water) which is also attached to the surface of the substrate W. Water droplets and mist of pure water attached to the surface of the substrate W form a water mark on the substrate. These water marks may adversely affect the device formed on the substrate W, resulting in a decrease in product yield. When a chemical solution is used instead of pure water as a cleaning liquid, back contamination of the substrate W may also be caused for the same reason. Therefore, it is important to prevent water marks and back contamination of the substrate.

最近，已建議用諾塔哥尼乾燥法(Rotagoni drying)作為乾燥製程以防止於基板上產生水痕。依照諾塔哥尼乾燥法，IPA蒸汽(異丙醇和氮氣之混合物)和純水從二個平行噴嘴供應至旋轉中之基板之表面，同時各個噴嘴係朝基板之徑向方向移動以便乾燥基板之表面。諾塔哥尼乾燥法能夠充分乾燥基板，甚至當基板以例如150至300轉/分鐘之相對低速範圍旋轉時亦然。然而，即使板甚以300轉/分鐘或更低旋轉時，當純水衝撞於固定蓋上時純水仍可能轉變成水滴或霧氣。這些水滴和霧氣可能會附著在基板之表面。 Recently, Rotagoni drying has been proposed as a drying process to prevent water marks from appearing on the substrate. According to the Nataorgani drying method, IPA steam (a mixture of isopropanol and nitrogen) and pure water are supplied from two parallel nozzles to the surface of the rotating substrate while the respective nozzles are moved in the radial direction of the substrate to dry the substrate. surface. The Notagoni drying method is capable of sufficiently drying the substrate even when the substrate is rotated at a relatively low speed range of, for example, 150 to 300 rpm. However, even if the plate is rotated at 300 rpm or lower, pure water may be converted into water droplets or mist when pure water hits the fixed cover. These water droplets and mist may adhere to the surface of the substrate.

本發明之目的係提供一種基板洗淨裝置，其能夠防止於基板之表面上產生水痕並防止基板之背面污染。 It is an object of the present invention to provide a substrate cleaning apparatus capable of preventing water marks from occurring on the surface of a substrate and preventing backside contamination of the substrate.

欲達成上述目的，依照本發明之一態樣係提供一種基板洗淨裝置，包含：基板固持機構，組構成用以水平地固持基板；旋轉機構，組構成使藉由該基板固持機構所固持 之基板旋轉；液體供應噴嘴，用來供應清洗液至該基板；以及旋轉蓋，設在該基板之周圍，並能以與該基板實質上相同的速度旋轉。該旋轉蓋具有成形為環繞該基板之形狀的內周表面，而該內周表面係從其底端至其頂端徑向朝內地傾斜。 To achieve the above object, in accordance with one aspect of the present invention, a substrate cleaning apparatus includes: a substrate holding mechanism configured to horizontally hold a substrate; and a rotating mechanism configured to be held by the substrate holding mechanism The substrate is rotated; a liquid supply nozzle for supplying cleaning liquid to the substrate; and a rotating cover disposed around the substrate and capable of rotating at substantially the same speed as the substrate. The rotary cover has an inner peripheral surface shaped to surround the shape of the substrate, and the inner peripheral surface is inclined radially inward from a bottom end thereof to a tip end thereof.

於本發明之較佳態樣，該基板洗淨裝置復包含固定蓋，其係成形為覆蓋該旋轉蓋之整個外周圍的形狀。 In a preferred aspect of the invention, the substrate cleaning apparatus includes a fixed cover that is shaped to cover the entire outer periphery of the rotating cover.

於本發明之較佳態樣，該基板洗淨裝置復包含：相對移動機構組，構成在該基板與該旋轉蓋之間提供沿著該基板之旋轉軸之相對移動。 In a preferred aspect of the invention, the substrate cleaning apparatus further includes: a relative moving mechanism group configured to provide relative movement between the substrate and the rotating cover along a rotational axis of the substrate.

於本發明之較佳態樣，該旋轉蓋係安裝在該基板固持機構上，該基板固持機構具有排放孔，該排放孔係具有位於該旋轉蓋之下端之上開口，且該排放孔向下向外地傾斜。 In a preferred aspect of the invention, the rotating cover is mounted on the substrate holding mechanism, the substrate holding mechanism has a discharge hole having an opening above the lower end of the rotary cover, and the discharge hole is downward Tilt to the ground.

於本發明之較佳態樣，該旋轉蓋之該內周表面係具有包括弧線之垂直剖面，而該內周表面相對於水平面之角度係從內周表面之上端之最小值漸漸增加至下端之最大值。 In a preferred aspect of the invention, the inner peripheral surface of the rotating cover has a vertical cross section including an arc, and the angle of the inner peripheral surface with respect to the horizontal plane gradually increases from the minimum value of the upper end of the inner peripheral surface to the lower end. Maximum value.

於本發明之較佳態樣，該基板洗淨裝置復包含：設在該旋轉蓋之內周表面上之液體吸收器。 In a preferred aspect of the invention, the substrate cleaning apparatus further comprises: a liquid absorber disposed on an inner circumferential surface of the rotating cover.

於本發明之較佳態樣，該基板洗淨裝置復包含：設在該旋轉蓋之徑向朝內側之內部旋轉蓋。該內部旋轉蓋可連同該旋轉蓋一起旋轉。 In a preferred aspect of the invention, the substrate cleaning apparatus further comprises: an inner rotating cover disposed on a radially inner side of the rotating cover. The inner rotating cover can rotate together with the rotating cover.

於本發明之較佳態樣，該內部旋轉蓋具有外周表面，該外周表面具有弧形之垂直剖面，而該內部旋轉蓋之該外周表面係具有位於與由該基板固持機構所固持之該基板之 上表面相同之高度或稍微低些的上端。 In a preferred aspect of the present invention, the inner rotating cover has an outer peripheral surface having a curved vertical cross section, and the outer peripheral surface of the inner rotating cover has the substrate and the substrate held by the substrate holding mechanism It The upper surface has the same height or a slightly lower upper end.

於本發明之較佳態樣，該基板洗淨裝置復包含：支撐臂，其係組構成使該內部旋轉蓋與該旋轉蓋彼此耦接。該支撐臂配置於該內部旋轉蓋與該旋轉蓋之間之間隙中，並成形為當該內旋轉蓋與該旋轉蓋旋轉時可在該間隙中產生向下氣流的形狀。 In a preferred aspect of the present invention, the substrate cleaning apparatus further includes: a support arm configured to couple the inner rotary cover and the rotary cover to each other. The support arm is disposed in a gap between the inner rotary cover and the rotary cover, and is shaped to generate a downward airflow in the gap when the inner rotary cover and the rotary cover rotate.

依照本發明，因為旋轉蓋實質上與該基板以相同的速度旋轉，故該基板與旋轉蓋之間之相對速度實質上為零。 因此，當清洗液衝撞於該旋轉蓋上時，該清洗液幾乎不會產生水滴和霧氣。如此一來，能夠防止產生基板之水痕和背部污染。從基板去除至旋轉蓋之清洗液會在離心力之作用下沿著旋轉蓋之內周表面快速地向下排放。因此，清洗液不會留存在旋轉蓋之內周表面上，而因此幾乎不會產生其水滴和霧氣。當基板和旋轉蓋之間之相對速度實質上為零時，在旋轉蓋內部幾乎不會形成旋轉氣流。因此，可防止清洗液之霧氣被旋轉氣流載送而附著於基板上。 According to the present invention, since the rotary cover rotates substantially at the same speed as the substrate, the relative speed between the substrate and the rotary cover is substantially zero. Therefore, when the cleaning liquid collides with the rotating cover, the cleaning liquid hardly generates water droplets and mist. In this way, it is possible to prevent water marks and back contamination of the substrate from being generated. The cleaning liquid removed from the substrate to the rotating cover is quickly discharged downward along the inner peripheral surface of the rotating cover by the centrifugal force. Therefore, the cleaning liquid does not remain on the inner peripheral surface of the rotary cover, and thus water droplets and mist are hardly generated. When the relative speed between the substrate and the rotating cover is substantially zero, a swirling air flow is hardly formed inside the rotating cover. Therefore, it is possible to prevent the mist of the cleaning liquid from being carried by the swirling airflow and adhering to the substrate.

由下列之詳細說明，配合所附圖式，本發明之上述和其他態樣、特徵和其他優點將變得很清楚，其中該等圖式藉由舉例之方式例示本發明之較佳實施例。 The above and other aspects, features, and other advantages of the present invention will become more apparent from the aspects of the invention.

1‧‧‧基板固持機構 1‧‧‧ substrate holding mechanism

2‧‧‧馬達 2‧‧‧Motor

3‧‧‧旋轉蓋 3‧‧‧Rotating cover

3a‧‧‧凹部 3a‧‧‧ recess

4‧‧‧前噴嘴 4‧‧‧ front nozzle

10‧‧‧夾爪 10‧‧‧claw

11‧‧‧工作台 11‧‧‧Workbench

11A‧‧‧第一工作台 11A‧‧‧First Workbench

11a‧‧‧通孔 11a‧‧‧through hole

11B‧‧‧第二工作台 11B‧‧‧Second Workbench

12A‧‧‧第一支撐軸 12A‧‧‧First support shaft

12B‧‧‧第二支撐軸 12B‧‧‧Second support shaft

15‧‧‧線性運動導引機構 15‧‧‧Linear motion guidance mechanism

17‧‧‧後噴嘴 17‧‧‧After nozzle

18‧‧‧氣體噴嘴 18‧‧‧ gas nozzle

20、21‧‧‧噴嘴 20, 21‧‧‧ nozzle

23‧‧‧制動器 23‧‧‧ brake

24‧‧‧耦接機構 24‧‧‧ coupling mechanism

25‧‧‧排放孔 25‧‧‧Drain hole

26‧‧‧輔助排放孔 26‧‧‧Auxiliary discharge holes

28‧‧‧裙 28‧‧‧ skirt

30‧‧‧液體出口通道 30‧‧‧Liquid outlet channel

31‧‧‧氣體出口通道 31‧‧‧ gas exit channel

32‧‧‧吸引源 32‧‧‧Attraction source

35‧‧‧固定板 35‧‧‧ fixed plate

40‧‧‧推桿 40‧‧‧Put

42‧‧‧輔助旋轉蓋 42‧‧‧Auxiliary rotating cover

44‧‧‧排放孔 44‧‧‧Drain holes

45‧‧‧固定蓋 45‧‧‧Fixed cover

46、47‧‧‧排出口 46, 47‧‧‧Export

50‧‧‧鰭片 50‧‧‧Fins

51‧‧‧清洗室 51‧‧‧cleaning room

51a‧‧‧氣體出口 51a‧‧‧ gas export

51b‧‧‧液體出口 51b‧‧‧Liquid exports

53‧‧‧液體吸收器 53‧‧‧Liquid absorber

60‧‧‧基板固持機構 60‧‧‧Substrate holding mechanism

61‧‧‧工作台 61‧‧‧Workbench

62‧‧‧支撐軸 62‧‧‧Support shaft

63‧‧‧液體儲槽 63‧‧‧Liquid storage tank

64‧‧‧出水口 64‧‧‧Water outlet

65‧‧‧屏蔽蓋 65‧‧‧Shield cover

70‧‧‧固定蓋 70‧‧‧Fixed cover

75‧‧‧內部旋轉蓋 75‧‧‧Internal rotating cover

75a‧‧‧凹部 75a‧‧‧ recess

80‧‧‧支撐臂 80‧‧‧Support arm

85‧‧‧固定蓋 85‧‧‧Fixed cover

100‧‧‧外殼 100‧‧‧ Shell

101a、101b、101c‧‧‧分隔壁 101a, 101b, 101c‧‧‧ partition wall

102‧‧‧裝載及卸載部 102‧‧‧Loading and Unloading Department

110、111、112、113、114‧‧‧開閉器 110, 111, 112, 113, 114‧‧‧ Openers

120‧‧‧前裝載單元 120‧‧‧Front loading unit

121‧‧‧移動機構 121‧‧‧Mobile agencies

122‧‧‧第一移載機器人 122‧‧‧First transfer robot

124‧‧‧第二移載機器人 124‧‧‧Second transfer robot

130‧‧‧拋光部 130‧‧‧ Polishing Department

130a‧‧‧第一拋光部 130a‧‧‧First Polishing Department

131A‧‧‧第一拋光單元 131A‧‧‧First Polishing Unit

130b‧‧‧第二拋光部 130b‧‧‧Second Polishing Department

131B‧‧‧第二拋光單元 131B‧‧‧Second polishing unit

131C‧‧‧第三拋光單元 131C‧‧‧third polishing unit

131D‧‧‧第四拋光單元 131D‧‧‧fourth polishing unit

132A、132B、132C、132D‧‧‧拋光台 132A, 132B, 132C, 132D‧‧‧ polishing table

133A、133B、133C、133D‧‧‧頂環 133A, 133B, 133C, 133D‧‧‧ top ring

134A、134B、134C、134D‧‧‧拋光液供應噴嘴 134A, 134B, 134C, 134D‧‧‧ polishing liquid supply nozzle

135A、135B、135C、135D‧‧‧修整器 135A, 135B, 135C, 135D‧‧‧ trimmer

136A、136B、136C、136D‧‧‧噴霧器 136A, 136B, 136C, 136D‧‧‧ sprayer

137A、137B、137C、137D‧‧‧頂環軸 137A, 137B, 137C, 137D‧‧‧ top ring shaft

140‧‧‧清洗部 140‧‧‧Cleaning Department

141、151‧‧‧反轉機 141, 151‧‧ ‧ reversal machine

142至145‧‧‧清洗單元 142 to 145 ‧ ‧ cleaning unit

146‧‧‧移載單元 146‧‧‧Transfer unit

150‧‧‧第一線性搬運器 150‧‧‧First linear carrier

152、166‧‧‧舉升器 152, 166‧‧‧ lifting device

153、154、155、167、168‧‧‧推動器 153, 154, 155, 167, 168‧‧‧ pushers

160‧‧‧第二線性搬運器 160‧‧‧Second linear carrier

200‧‧‧移動機構 200‧‧‧Mobile agencies

201‧‧‧裝載及卸載部 201‧‧‧Loading and Unloading Department

202‧‧‧移載機器人 202‧‧‧Transfer robot

204‧‧‧晶圓匣盒 204‧‧‧ wafer cassette

206‧‧‧晶圓站 206‧‧‧ Wafer Station

208‧‧‧移載機器人 208‧‧‧Transfer robot

210‧‧‧旋轉搬運器 210‧‧‧Rotary carrier

212‧‧‧清洗單元 212‧‧‧cleaning unit

214‧‧‧清洗單元 214‧‧‧cleaning unit

218‧‧‧修整器 218‧‧‧Finisher

222‧‧‧水箱 222‧‧‧ water tank

224‧‧‧線上厚度監視器(ITM) 224‧‧‧Online Thickness Monitor (ITM)

230‧‧‧拋光台 230‧‧‧ polishing table

231‧‧‧頂環 231‧‧‧Top ring

232‧‧‧拋光液供應噴嘴 232‧‧‧ polishing liquid supply nozzle

250‧‧‧拋光單元 250‧‧‧ Polishing unit

TP1‧‧‧第一移載位置 TP1‧‧‧First transfer position

TP2‧‧‧第二移載位置 TP2‧‧‧second transfer position

TP3‧‧‧第三移載位置 TP3‧‧‧ third transfer position

TP4‧‧‧第四移載位置 TP4‧‧‧fourth transfer position

TP5‧‧‧第五移載位置 TP5‧‧‧ fifth transfer position

TP6‧‧‧第六移載位置 TP6‧‧‧ sixth transfer position

TP7‧‧‧第七移載位置 TP7‧‧‧ seventh transfer position

W‧‧‧基板 W‧‧‧Substrate

第1圖為依照本發明第一實施例之基板洗淨裝置之示意垂直剖面圖；第2圖為第1圖中所示之基板洗淨裝置之平面圖；第3圖為第1圖中所示之基板洗淨裝置於基板被升高 時之示意垂直剖面圖；第4圖為第1圖中所示之基板洗淨裝置之基板固持機構之平面圖；第5圖為顯示液體流經第1圖中所示之基板洗淨裝置之路徑之圖示；第6圖為顯示氣體流經第1圖中所示之基板洗淨裝置之路徑之圖示；第7圖為顯示依照第一實施例之基板洗淨裝置之旋轉蓋之內周表面之變形例之放大垂直剖面圖；第8圖為依照第一實施例之基板洗淨裝置於將基板舉升到該旋轉蓋之上端時之放大垂直剖面圖；第9圖為依照本發明第二實施例之基板洗淨裝置之示意垂直剖面圖；第10圖為第9圖中所示之基板洗淨裝置於將基板以推桿升高時之示意垂直剖面圖；第11圖為依照第二實施例之基板洗淨裝置之旋轉蓋之變形例之放大剖面圖；第12圖為依照本發明第三實施例之基板洗淨裝置之示意垂直剖面圖；第13圖為顯示氣體流經第12圖中所示之基板洗淨裝置之路徑之圖示；第14圖為依照第三實施例之基板洗淨裝置之變形例之示意垂直剖面圖；第15圖為依照本發明第四實施例之基板洗淨裝置之 示意垂直剖面圖；第16圖為依照本發明第五實施例之基板洗淨裝置之示意垂直剖面圖；第17圖為依照本發明之參考例之基板洗淨裝置之示意垂直剖面圖；第18圖為依照本發明之另一參考例之基板洗淨裝置之示意垂直剖面圖；第19圖為依照本發明之又另一參考例之基板洗淨裝置之示意垂直剖面圖；第20圖為依照本發明之又另一參考例之基板洗淨裝置之示意垂直剖面圖；第21圖為依照本發明第六實施例之基板洗淨裝置之示意垂直剖面圖；第22A圖為內部旋轉蓋和外部旋轉蓋之放大垂直剖面圖；第22B圖為內部旋轉蓋和夾爪之平面圖；第23A圖為固定於內部旋轉蓋之支撐臂之從上方觀看時之平面圖；第23B圖為第23A圖中所示之支撐臂當從徑向外側觀看時之圖示；第24圖為顯示依照本發明第六實施例之基板洗淨裝置之具有附加之固定蓋之變形例的示意垂直剖面圖；第25圖為具備有依照本發明之第一至第六實施例中之任一基板洗淨裝置之拋光裝置之平面圖； 第26圖為第25圖中所示拋光裝置之示意透視圖；第27圖為具備有依照本發明之第一至第六實施例中之任一基板洗淨裝置之另一拋光裝置之平面圖；第28圖為習知之基板洗淨裝置之示意透視圖；以及第29圖為第28圖中所示之基板洗淨裝置之平面圖。 1 is a schematic vertical sectional view of a substrate cleaning apparatus according to a first embodiment of the present invention; FIG. 2 is a plan view of the substrate cleaning apparatus shown in FIG. 1; and FIG. 3 is a view shown in FIG. The substrate cleaning device is raised on the substrate FIG. 4 is a plan view showing the substrate holding mechanism of the substrate cleaning device shown in FIG. 1; FIG. 5 is a view showing the path of the liquid flowing through the substrate cleaning device shown in FIG. Figure 6 is a diagram showing the path of gas flowing through the substrate cleaning device shown in Figure 1; and Figure 7 is a view showing the inner circumference of the rotating cover of the substrate cleaning device according to the first embodiment. An enlarged vertical sectional view of a modified example of the surface; FIG. 8 is an enlarged vertical sectional view of the substrate cleaning apparatus according to the first embodiment when the substrate is lifted to the upper end of the rotary cover; FIG. 9 is a view according to the present invention. 2 is a schematic vertical cross-sectional view of the substrate cleaning apparatus of the second embodiment; FIG. 10 is a schematic vertical sectional view of the substrate cleaning apparatus shown in FIG. 9 when the substrate is raised by the push rod; 2 is an enlarged cross-sectional view showing a modification of the rotary cover of the substrate cleaning device of the second embodiment; FIG. 12 is a schematic vertical sectional view of the substrate cleaning device according to the third embodiment of the present invention; and FIG. 13 is a view showing a gas flow through Figure 12 shows the path of the substrate cleaning device shown in the figure. 14. The picture shows a schematic vertical sectional view in accordance with the modified embodiment of the substrate cleaning apparatus of the third embodiment; graph 15 in accordance with a fourth embodiment of the substrate cleaning apparatus of the present invention Figure 16 is a schematic vertical sectional view of a substrate cleaning apparatus according to a fifth embodiment of the present invention; and Figure 17 is a schematic vertical sectional view of a substrate cleaning apparatus according to a reference example of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 19 is a schematic vertical sectional view of a substrate cleaning apparatus according to still another reference example of the present invention; FIG. 19 is a schematic vertical sectional view of a substrate cleaning apparatus according to still another reference example of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 21 is a schematic vertical sectional view of a substrate cleaning apparatus according to a sixth embodiment of the present invention; and FIG. 22A is an internal rotary cover and an exterior An enlarged vertical sectional view of the rotary cover; a 22A is a plan view of the inner rotary cover and the jaw; a 23A is a plan view of the support arm fixed to the inner rotary cover when viewed from above; and FIG. 23B is a view of the 23A FIG. 24 is a schematic vertical sectional view showing a modification of the substrate cleaning apparatus according to the sixth embodiment of the present invention with an additional fixing cover; FIG. A plan view of a polishing apparatus having a substrate cleaning apparatus according to any one of the first to sixth embodiments of the present invention; Figure 26 is a schematic perspective view of the polishing apparatus shown in Figure 25; and Figure 27 is a plan view of another polishing apparatus provided with any of the substrate cleaning apparatuses according to the first to sixth embodiments of the present invention; Figure 28 is a schematic perspective view of a conventional substrate cleaning apparatus; and Figure 29 is a plan view of the substrate cleaning apparatus shown in Figure 28.

現將參照圖式說明依照本發明實施例之基板洗淨裝置。相同或對應之部分將標以相同或對應之參考符號。 A substrate cleaning apparatus according to an embodiment of the present invention will now be described with reference to the drawings. The same or corresponding parts will be marked with the same or corresponding reference signs.

第1圖為依照本發明第一實施例之基板洗淨裝置之示意垂直剖面圖，而第2圖為第1圖中所示之基板洗淨裝置之平面圖。 1 is a schematic vertical sectional view of a substrate cleaning apparatus according to a first embodiment of the present invention, and FIG. 2 is a plan view of the substrate cleaning apparatus shown in FIG. 1.

如第1圖中所示，基板洗淨裝置包含：基板固持機構1，係組構成用以水平地保持基板W；馬達(旋轉機構)2，係組構成經由該基板固持機構1使該基板W以其自己的中心軸旋轉；旋轉蓋3，設在該基板W之周圍；以及前噴嘴4，用來供應純水做為清洗液至該基板W之表面(前表面)。可以不使用純水而使用化學溶液作為清洗液。 As shown in FIG. 1, the substrate cleaning apparatus includes a substrate holding mechanism 1 configured to horizontally hold the substrate W, and a motor (rotating mechanism) 2 through which the substrate is configured to hold the substrate W. Rotating with its own central axis; a rotating cover 3 disposed around the substrate W; and a front nozzle 4 for supplying pure water as a cleaning liquid to the surface (front surface) of the substrate W. A chemical solution can be used as the cleaning solution without using pure water.

基板固持機構1包含：複數個夾爪10，係組構成夾住基板W之周圍邊緣；圓形第一工作台11A，夾爪10係安裝於其上；支撐該第一工作台11A之中空第一支撐軸12A；具有凹部可容置該第一工作台11A於其中之圓形第二工作台11B；和支撐該第二工作台11B之中空第二支撐軸12B。第一支撐軸12A延伸穿過第二支撐軸12B。第一工作台11A、第二工作台11B、第一支撐軸12A、和第二支 撐軸12B以同心方式配置。旋轉蓋3固定於圓形第二工作台11B之周邊。該第二工作台11B與該旋轉蓋3係以同心方式配置。由夾爪10所固持住之基板W和旋轉蓋3係以同心方式定位。 The substrate holding mechanism 1 includes: a plurality of jaws 10, the system constitutes a peripheral edge sandwiching the substrate W; a circular first table 11A on which the jaws 10 are mounted; and a hollow body supporting the first table 11A a support shaft 12A; a circular second table 11B having a recess for receiving the first table 11A therein; and a hollow second support shaft 12B supporting the second table 11B. The first support shaft 12A extends through the second support shaft 12B. First stage 11A, second stage 11B, first support shaft 12A, and second branch The fulcrums 12B are arranged in a concentric manner. The rotary cover 3 is fixed to the periphery of the circular second table 11B. The second table 11B and the rotating cover 3 are arranged concentrically. The substrate W and the rotary cover 3 held by the jaws 10 are positioned in a concentric manner.

第一支撐軸12A和第二支撐軸12B藉由線性運動導引機構15而彼此耦接。此線性運動導引機構15係組構成於第一支撐軸12A和第二支撐軸12B之間傳送轉矩，同時允許第一支撐軸12A和第二支撐軸12B相對於彼此朝其縱向(亦即，沿著其旋轉軸方向)移動。線性運動導引機構15之具體例子包含滾珠鍵槽軸承(ball spline bearing)。 The first support shaft 12A and the second support shaft 12B are coupled to each other by a linear motion guiding mechanism 15. The linear motion guiding mechanism 15 is configured to transmit torque between the first support shaft 12A and the second support shaft 12B while allowing the first support shaft 12A and the second support shaft 12B to face each other with respect to each other (ie, , moves along its axis of rotation). A specific example of the linear motion guiding mechanism 15 includes a ball spline bearing.

馬達2經由齒輪耦接到第二支撐軸12B之外周表面。 馬達2之轉矩經由線性運動導引機構15傳送至第一支撐軸12A，藉此旋轉由夾爪10所固持之基板W。第一工作台11A之旋轉和第二工作台11B之旋轉由於線性運動導引機構15而於所有時間係彼此同步。詳言之，基板W和旋轉蓋3彼此整合地旋轉，彼此之間的相對速度為零。基板W和旋轉蓋3之間可以有些微的速度差。基板W和旋轉蓋3可以藉由不同的旋轉機構旋轉。於此說明書中，以實質相同的速度旋轉基板W和旋轉蓋3係意指以實質相同的角速度使基板W和旋轉蓋3旋轉於相同的方向，而非表示使基板W和旋轉蓋3旋轉於相反的方向。 The motor 2 is coupled to the outer peripheral surface of the second support shaft 12B via a gear. The torque of the motor 2 is transmitted to the first support shaft 12A via the linear motion guiding mechanism 15, thereby rotating the substrate W held by the jaws 10. The rotation of the first table 11A and the rotation of the second table 11B are synchronized with each other at all times due to the linear motion guiding mechanism 15. In detail, the substrate W and the rotary cover 3 are integrally rotated with each other, and the relative speed between each other is zero. There may be some slight speed difference between the substrate W and the rotating cover 3. The substrate W and the rotary cover 3 can be rotated by different rotation mechanisms. In this specification, rotating the substrate W and the rotary cover 3 at substantially the same speed means rotating the substrate W and the rotary cover 3 in the same direction at substantially the same angular velocity, instead of rotating the substrate W and the rotary cover 3 Opposite Direction.

使用為垂直移動機構之制動器23經由耦接機構24耦接至第一支撐軸12A。此耦接機構24組構成用以傳送制動器23(其作動於旋轉軸方向)之驅動力至第一支撐軸12A， 同時允許該第一支撐軸12A以其自己的軸旋轉。如第3圖中所示，制動器23經由耦接機構24垂直地移動該第一工作台11A、第一支撐軸12A、和夾爪10(亦即，基板W)。 制動器23於是構成相對移動機構，用來提供基板W和旋轉蓋3之間沿著旋轉軸之相對移動。 The brake 23, which is a vertical moving mechanism, is coupled to the first support shaft 12A via the coupling mechanism 24. The coupling mechanism 24 constitutes a driving force for transmitting the brake 23 (which acts in the direction of the rotating shaft) to the first support shaft 12A, At the same time, the first support shaft 12A is allowed to rotate on its own axis. As shown in FIG. 3, the brake 23 vertically moves the first table 11A, the first support shaft 12A, and the jaws 10 (i.e., the substrate W) via the coupling mechanism 24. The brake 23 then constitutes a relative movement mechanism for providing relative movement between the substrate W and the rotary cover 3 along the axis of rotation.

第一支撐軸12A在其中容置有：後噴嘴(back nozzle)17，其係耦接至清洗液供應源；和氣體噴嘴18，其係耦接至乾燥氣體供應源。清洗液供應源係儲存純水於其中作為清洗液，並且經由後噴嘴17供應該純水至基板W之後表面。該乾燥氣體供應源係儲存氮氣或乾燥空氣於其中作為乾燥氣體，並且經由氣體噴嘴18供應乾燥氣體至該基板W之後表面。 The first support shaft 12A houses therein a back nozzle 17 coupled to the cleaning liquid supply source, and a gas nozzle 18 coupled to the dry gas supply source. The cleaning liquid supply source stores pure water therein as a cleaning liquid, and supplies the pure water to the rear surface of the substrate W via the rear nozzle 17. The dry gas supply source stores nitrogen or dry air therein as a dry gas, and supplies a dry gas to the rear surface of the substrate W via the gas nozzle 18.

前噴嘴4指向基板W之中央。前噴嘴4耦接至圖中未顯示之純水供應源(亦即，清洗液供應源)，並且從該純水供應源供應純水至基板W之前表面之中央。用來執行諾塔哥尼乾燥法之二個平行噴嘴20和21係配置在基板W之上。噴嘴20用來供應IPA蒸汽(異丙醇和氮氣體之混合物)至基板W之前表面上。噴嘴21用來供應純水至基板W之前表面上，以便防止基板W之前表面變乾。噴嘴20和21可移動於基板W之徑向方向。 The front nozzle 4 is directed to the center of the substrate W. The front nozzle 4 is coupled to a pure water supply source (i.e., a cleaning liquid supply source) not shown in the drawing, and supplies pure water from the pure water supply source to the center of the front surface of the substrate W. Two parallel nozzles 20 and 21 for performing the Notagoni drying method are disposed above the substrate W. The nozzle 20 is used to supply IPA vapor (a mixture of isopropanol and nitrogen gas) onto the front surface of the substrate W. The nozzle 21 is used to supply pure water to the front surface of the substrate W in order to prevent the front surface of the substrate W from drying out. The nozzles 20 and 21 are movable in the radial direction of the substrate W.

第4圖為基板固持機構1之平面圖。如第1和4圖中所示，第二工作台11B具有界定於其中之複數個排放孔25。排放孔25具有位於旋轉蓋3下端之上開口和位於第二工作台11B之下表面之下開口。如第4圖中所示，排放孔 25為橢圓形孔，其係延伸於旋轉蓋3之周圍方向，並徑向朝外地朝向其下開口傾斜。從前噴嘴4和後噴嘴17供應之清洗液(例如純水)和從噴嘴21供應之純水、以及來自氣體噴嘴18之氣體和周圍環境之氣體(典型為空氣)係經由排放孔25排放。 Fig. 4 is a plan view of the substrate holding mechanism 1. As shown in Figures 1 and 4, the second table 11B has a plurality of discharge holes 25 defined therein. The discharge hole 25 has an opening located above the lower end of the rotary cover 3 and an opening below the lower surface of the second stage 11B. As shown in Figure 4, the discharge hole 25 is an elliptical hole extending in the direction around the rotary cover 3 and inclined radially outward toward the lower opening thereof. The cleaning liquid (for example, pure water) supplied from the front nozzle 4 and the rear nozzle 17 and the pure water supplied from the nozzle 21, and the gas from the gas nozzle 18 and the surrounding environment (typically air) are discharged through the discharge hole 25.

第二工作台11B亦具有複數個輔助排放孔26，其係用來排放困陷於第一工作台11A和第二工作台11B之間之液體(清洗液、純水)。這些輔助排放孔26具有定位於第一工作台11A與第二工作台11B之間之間隙中的上開口、和位在第二工作台11B之下表面之下開口。輔助排放孔26係如同排放孔25，徑向朝外地朝向其下開口傾斜。 The second stage 11B also has a plurality of auxiliary discharge holes 26 for discharging the liquid (cleaning liquid, pure water) trapped between the first stage 11A and the second stage 11B. These auxiliary discharge holes 26 have an upper opening positioned in a gap between the first stage 11A and the second stage 11B, and an opening below the lower surface of the second stage 11B. The auxiliary discharge hole 26 is like the discharge hole 25, and is inclined radially outward toward the lower opening thereof.

液體出口通道30和氣體出口通道31設在排放孔25和輔助排放孔26之下方開口之下方。液體出口通道30和氣體出口通道31為環形。液體出口通道30係位於該氣體出口通道31之徑向外側。以此種配置方式，從排放孔25和輔助排放孔26排放之液體和氣體會由於離心力而彼此分離，而使得液體流入液體出口通道30，而氣體流入氣體出口通道31。 The liquid outlet passage 30 and the gas outlet passage 31 are provided below the discharge opening 25 and the lower opening of the auxiliary discharge hole 26. The liquid outlet passage 30 and the gas outlet passage 31 are annular. The liquid outlet passage 30 is located radially outward of the gas outlet passage 31. In this arrangement, the liquid and gas discharged from the discharge hole 25 and the auxiliary discharge hole 26 are separated from each other by the centrifugal force, so that the liquid flows into the liquid outlet passage 30, and the gas flows into the gas outlet passage 31.

第5圖顯示液體之路徑，第6圖顯示氣體之路徑。氣體出口通道31耦接至吸引源32(譬如真空泵)。如第6圖中所示，吸引源32之運作係產生自基板W之前表面經過排放孔25和氣體出口通道31流動的氣體的向下氣流。 Figure 5 shows the path of the liquid and Figure 6 shows the path of the gas. The gas outlet passage 31 is coupled to a suction source 32 (such as a vacuum pump). As shown in Fig. 6, the operation of the attraction source 32 produces a downward flow of gas from the surface of the substrate W through the discharge orifice 25 and the gas outlet passage 31.

環形固定板35設在第二工作台11B之下方，並與第二工作台11B之下表面間具有小的餘隙。環形固定板35 係用來防止周圍的氣體被第二工作台11B之旋轉所攪動。向下延伸之管狀裙28固定至第二工作台11B之周圍。此裙28使用來防止從排放孔25和輔助排放孔26排放之液體的飛散，並亦用來使液體能夠於遠離基板W之位置被釋放。 The annular fixing plate 35 is disposed below the second table 11B and has a small clearance between the lower surface of the second table 11B. Ring fixing plate 35 It is used to prevent the surrounding gas from being agitated by the rotation of the second table 11B. A downwardly extending tubular skirt 28 is secured to the periphery of the second table 11B. This skirt 28 is used to prevent scattering of liquid discharged from the discharge holes 25 and the auxiliary discharge holes 26, and is also used to enable liquid to be released at a position away from the substrate W.

旋轉蓋3具有內周表面之形狀，以便環繞由基板固持機構1所固持之基板W。旋轉蓋3之此內周表面具有位於基板W上方之上端。內周表面係成形為使得其直徑(旋轉蓋3之內徑)朝向內周表面之上端漸漸減少。換言之，內周表面整體上係徑向朝內地朝向其上端傾斜，而內周表面和水平面之間的角度θ(參看第1圖)係少於90度。 The rotary cover 3 has a shape of an inner peripheral surface so as to surround the substrate W held by the substrate holding mechanism 1. The inner peripheral surface of the rotary cover 3 has an upper end above the substrate W. The inner peripheral surface is shaped such that its diameter (the inner diameter of the rotary cover 3) gradually decreases toward the upper end of the inner peripheral surface. In other words, the inner peripheral surface as a whole is inclined radially inward toward the upper end thereof, and the angle θ (see Fig. 1) between the inner peripheral surface and the horizontal plane is less than 90 degrees.

如第1圖中所示，旋轉蓋3之內周表面之垂直剖面包含二條傾斜線。然而，旋轉蓋3之內周表面之垂直剖面不限於第1圖中所示之此形狀。如第7圖中所示，旋轉蓋3之內周表面可以具有包括弧形線之垂直剖面，亦即，拱形的垂直剖面。於第7圖中，內周表面和水平面之間的角度從旋轉蓋3之上端之最小值漸漸地增加至下端之最大值(θ1<θ2)。第7圖中所示之旋轉蓋3之內周表面能夠減少液體衝撞在旋轉蓋3上之衝擊，並由於離心力而使液體能夠沿著內周表面快速地向下流。內周表面於其上端之相對於水平面之角度最好實質上為0度。 As shown in Fig. 1, the vertical section of the inner peripheral surface of the rotary cover 3 includes two oblique lines. However, the vertical cross section of the inner peripheral surface of the rotary cover 3 is not limited to the shape shown in Fig. 1. As shown in Fig. 7, the inner peripheral surface of the rotary cover 3 may have a vertical cross section including a curved line, that is, an arched vertical cross section. In Fig. 7, the angle between the inner peripheral surface and the horizontal plane gradually increases from the minimum value of the upper end of the rotary cover 3 to the maximum value of the lower end (θ1 < θ2). The inner peripheral surface of the rotary cover 3 shown in Fig. 7 can reduce the impact of liquid collision on the rotary cover 3, and allows the liquid to rapidly flow downward along the inner peripheral surface due to the centrifugal force. The angle of the inner peripheral surface at its upper end with respect to the horizontal plane is preferably substantially 0 degrees.

如第2圖中所示，旋轉蓋3之上端具有複數個凹部3a，其各具有對應於各夾爪10形狀之形狀。旋轉蓋3之上端之直徑稍微大於基板W之直徑。 As shown in Fig. 2, the upper end of the rotary cover 3 has a plurality of recesses 3a each having a shape corresponding to the shape of each of the jaws 10. The diameter of the upper end of the rotary cover 3 is slightly larger than the diameter of the substrate W.

如第1圖中所示，旋轉蓋3之下端係定位於排放孔25之各上開口之部分之上，而使得沿著旋轉蓋3之內周表面向下流動之液體能夠平穩地被引入排放孔25。若排放孔25之上開口位於遠離該旋轉蓋3之下端之位置，則沿著旋轉蓋3之內周表面向下流動之液體將擊中第二工作台11B上表面且將不會平穩地流入排放孔25。依照本實施例之上述配置方式，液體不會衝撞在第二工作台11B之上表面上。因此，液體係平穩地流入排放孔25中。 As shown in Fig. 1, the lower end of the rotary cover 3 is positioned above the respective upper openings of the discharge holes 25, so that the liquid flowing downward along the inner peripheral surface of the rotary cover 3 can be smoothly introduced into the discharge. Hole 25. If the opening above the discharge hole 25 is located away from the lower end of the rotary cover 3, the liquid flowing downward along the inner peripheral surface of the rotary cover 3 will hit the upper surface of the second table 11B and will not smoothly flow in. Discharge hole 25. According to the above configuration of the embodiment, the liquid does not collide with the upper surface of the second stage 11B. Therefore, the liquid system smoothly flows into the discharge hole 25.

現將說明依照第一實施例之基板洗淨裝置之操作。 The operation of the substrate cleaning apparatus according to the first embodiment will now be explained.

供應馬達2能量以旋轉基板W和旋轉蓋3。於此狀態，前噴嘴4和後噴嘴17供應純水至基板W之前表面(上表面)和後表面(下表面)，以便用純水沖洗基板W之整體。供應至基板W之純水係藉由離心力散佈在前表面和後表面之上，由此沖洗基板W之所有表面。從旋轉中之基板W去除的純水係由旋轉蓋3捕獲，並流入排放孔25中。當如此沖洗基板W時，二個噴嘴20、21係位在其遠離基板W之給定待命位置。 The motor 2 energy is supplied to rotate the substrate W and the rotary cover 3. In this state, the front nozzle 4 and the rear nozzle 17 supply pure water to the front surface (upper surface) and the rear surface (lower surface) of the substrate W to rinse the entirety of the substrate W with pure water. The pure water supplied to the substrate W is dispersed on the front surface and the rear surface by centrifugal force, thereby rinsing all surfaces of the substrate W. The pure water removed from the rotating substrate W is captured by the rotary cover 3 and flows into the discharge hole 25. When the substrate W is thus washed, the two nozzles 20, 21 are positioned at a given standby position away from the substrate W.

然後，停止從前噴嘴4供應純水，且將前噴嘴4移至遠離基板W之給定待命位置。將二個噴嘴20、21移至基板W上方之操作位置。在基板W以150至300轉/分鐘之低速範圍旋轉之同時，噴嘴20係供應IPA蒸汽、而噴嘴21係供應純水至基板W之前表面。於操作期間，後噴嘴17係供應純水至基板W之後表面。二個噴嘴20、21係同時朝基板W之徑向方向移動，藉此乾燥基板W之前表面(上 表面)。 Then, the supply of pure water from the front nozzle 4 is stopped, and the front nozzle 4 is moved to a given standby position away from the substrate W. The two nozzles 20, 21 are moved to an operating position above the substrate W. While the substrate W is rotated at a low speed range of 150 to 300 rpm, the nozzle 20 supplies IPA vapor, and the nozzle 21 supplies pure water to the front surface of the substrate W. During operation, the rear nozzle 17 supplies pure water to the surface behind the substrate W. The two nozzles 20, 21 are simultaneously moved toward the radial direction of the substrate W, thereby drying the front surface of the substrate W (on surface).

其後，將二個噴嘴20、21移至其待命位置，並停止從後噴嘴17供應純水。然後，基板W以1000至1500轉/分鐘之高速範圍旋轉，而從基板W之後表面去除純水。於此操作期間，氣體噴嘴18係供應乾燥氣體至基板W之後表面。以此種方式，乾燥基板W之後表面。 Thereafter, the two nozzles 20, 21 are moved to their standby positions, and the supply of pure water from the rear nozzles 17 is stopped. Then, the substrate W is rotated at a high speed range of 1000 to 1,500 rpm, and pure water is removed from the surface after the substrate W. During this operation, the gas nozzle 18 supplies dry gas to the surface behind the substrate W. In this way, the surface behind the substrate W is dried.

當乾燥基板W之前表面(上表面)時，如上所述，將純水供應至基板W之前表面和後表面。藉由離心力從基板W去除此純水並移至旋轉蓋3。因為旋轉蓋3和基板W以相同速度旋轉，因此當純水衝撞於旋轉蓋3之內周表面上時，其幾乎不會飛散。此外，在以相同的速度旋轉之旋轉蓋3和基板W之間的空間只會產生些微的旋轉氣流。因此，純水之霧氣不會由旋轉氣流載送至基板W。如此一來，可防止在基板W上產生水痕。再者，因為旋轉蓋3之內周表面係徑向朝內地傾斜，因此由旋轉蓋3之旋轉所產生之離心力會導致純水沿著旋轉蓋3之內周表面快速地向下方流至排放孔25。 When the front surface (upper surface) of the substrate W is dried, as described above, pure water is supplied to the front surface and the rear surface of the substrate W. This pure water is removed from the substrate W by centrifugal force and moved to the rotary cover 3. Since the rotary cover 3 and the substrate W are rotated at the same speed, when pure water collides with the inner peripheral surface of the rotary cover 3, it hardly scatters. In addition, the space between the rotating cover 3 and the substrate W that rotates at the same speed produces only a slight swirling airflow. Therefore, the mist of pure water is not carried to the substrate W by the swirling gas flow. In this way, water marks on the substrate W can be prevented from occurring. Furthermore, since the inner peripheral surface of the rotary cover 3 is inclined radially inward, the centrifugal force generated by the rotation of the rotary cover 3 causes the pure water to rapidly flow downward along the inner peripheral surface of the rotary cover 3 to the discharge hole. 25.

基板W之乾燥終止後，停止自氣體噴嘴18供應乾燥氣體。如第3圖中所示，制動器23將基板W舉升直到基板W定位於旋轉蓋3上方為止。藉由移載機器人之手(圖中未顯示)將經乾燥之基板W從基板固持機構1移走。 After the drying of the substrate W is terminated, the supply of the dry gas from the gas nozzle 18 is stopped. As shown in FIG. 3, the brake 23 lifts the substrate W until the substrate W is positioned above the rotary cover 3. The dried substrate W is removed from the substrate holding mechanism 1 by the hand of the transfer robot (not shown).

較理想的情況是，當乾燥基板W之前表面時和當乾燥基板W之後表面時，基板W係定位於不同的高度。舉例而言，當乾燥基板W之前表面時，基板W是位在第1圖 中所示之正常位置。另一方面，當乾燥基板W之後表面時，係舉升該基板W至旋轉蓋3之上端之位置。詳言之，係將基板W舉升直到旋轉蓋3之內周表面之上端定位於基板W之前表面和後表面之間為止，如第8圖中所示。於第8圖中所示之此位置，基板W和旋轉蓋3之間之距離係為最小。因此，可防止水滴和霧氣從基板W之後表面流至前表面。 Preferably, the substrate W is positioned at different heights when the front surface of the substrate W is dried and when the surface behind the substrate W is dried. For example, when the front surface of the substrate W is dried, the substrate W is in the first figure. The normal position shown in . On the other hand, when the surface behind the substrate W is dried, the substrate W is lifted to the position of the upper end of the rotary cover 3. In detail, the substrate W is lifted up until the upper end of the inner peripheral surface of the rotary cover 3 is positioned between the front surface and the rear surface of the substrate W as shown in Fig. 8. At this position shown in Fig. 8, the distance between the substrate W and the rotary cover 3 is the smallest. Therefore, it is possible to prevent water droplets and mist from flowing from the rear surface of the substrate W to the front surface.

第9圖為依照本發明之第二實施例之基板洗淨裝置之示意垂直剖面圖。依照第二實施例基板洗淨裝置之相同於第一實施例之基板洗淨裝置的部分者係以相同的元件符號表示，並且不會於下文中予以說明。依照第二實施例之基板洗淨裝置之詳細操作係相同於第一實施例之基板洗淨裝置者，以下將不作說明。 Figure 9 is a schematic vertical sectional view of a substrate cleaning apparatus in accordance with a second embodiment of the present invention. Portions of the substrate cleaning apparatus according to the second embodiment which are the same as those of the substrate cleaning apparatus of the first embodiment are denoted by the same reference numerals and will not be described below. The detailed operation of the substrate cleaning apparatus according to the second embodiment is the same as that of the substrate cleaning apparatus of the first embodiment, and will not be described below.

依照第二實施例，基板固持機構1包含單一工作台11、支撐該工作台11之中空支撐軸12、和安裝於該工作台11之上表面之複數個夾爪10。旋轉蓋3固定於工作台11之周圍。旋轉蓋3和基板W之間之相關位置係隨時固定。 According to the second embodiment, the substrate holding mechanism 1 includes a single table 11, a hollow support shaft 12 supporting the table 11, and a plurality of jaws 10 mounted on the upper surface of the table 11. The rotary cover 3 is fixed around the table 11. The relative position between the rotary cover 3 and the substrate W is fixed at any time.

在工作台11之下方，設有至少3個推桿40和用來垂直移動這些推桿40之制動器23。工作台11具有複數個通孔11a，其係位於對應於各個推桿40之位置之位置。配置於工作台11下方之固定板35亦具有複數個通孔11(未顯示)，其亦位於對應於各個通孔11a之位置之位置。工作台11沒有輔助排放孔。 Below the table 11, there are provided at least three push rods 40 and a brake 23 for vertically moving the push rods 40. The table 11 has a plurality of through holes 11a which are located at positions corresponding to the respective push rods 40. The fixing plate 35 disposed under the table 11 also has a plurality of through holes 11 (not shown) which are also located at positions corresponding to the respective through holes 11a. The table 11 has no auxiliary discharge holes.

以與第一實施例相同的操作順序乾燥基板W。於乾燥 基板W後，制動器23舉升推桿40，如第10圖中所示，該推桿40係向上移動穿過通孔11a以舉升基板W。其後，藉由移載機器人之手(圖中未顯示)將該乾燥之基板W移走。 The substrate W is dried in the same operation sequence as the first embodiment. Drying After the substrate W, the brake 23 lifts the push rod 40. As shown in Fig. 10, the push rod 40 is moved upward through the through hole 11a to lift the substrate W. Thereafter, the dried substrate W is removed by the hand of the transfer robot (not shown).

第11圖為依照第二實施例之基板洗淨裝置之旋轉蓋3之變形例之放大剖面圖。如第11圖中所示，旋轉蓋3係與固定於旋轉蓋3之內周表面之輔助旋轉蓋42結合。旋轉蓋3和輔助旋轉蓋42彼此共同旋轉。輔助旋轉蓋42具有徑向朝內朝向其上端傾斜之內周表面。該輔助旋轉蓋42之上端係位於與該基板W實質上相同的高度。旋轉蓋3之上端和輔助旋轉蓋42之上端具有實質上相同的直徑。輔助旋轉蓋42之上端具有複數個凹部(圖中未顯示)，該等凹部相似於第2圖中所示之凹部3a之形狀。輔助旋轉蓋42具有複數個界定於其下端之排放孔44。 Fig. 11 is an enlarged cross-sectional view showing a modification of the rotary cover 3 of the substrate cleaning apparatus according to the second embodiment. As shown in Fig. 11, the rotary cover 3 is coupled to the auxiliary rotary cover 42 fixed to the inner peripheral surface of the rotary cover 3. The rotary cover 3 and the auxiliary rotary cover 42 rotate together with each other. The auxiliary rotary cover 42 has an inner peripheral surface that is inclined radially inward toward the upper end thereof. The upper end of the auxiliary rotating cover 42 is located at substantially the same height as the substrate W. The upper end of the rotary cover 3 and the upper end of the auxiliary rotary cover 42 have substantially the same diameter. The upper end of the auxiliary rotary cover 42 has a plurality of recesses (not shown) which are similar to the shape of the recess 3a shown in Fig. 2. The auxiliary rotary cover 42 has a plurality of discharge holes 44 defined at its lower end.

在基板W之前表面上方之空間和在基板W之後表面下方之空間係藉由輔助旋轉蓋42而彼此分離。因此，乾燥基板W之前表面之製程和乾燥基板W之後表面之製程幾乎不會彼此影響。詳言之，輔助旋轉蓋42係防止液體之霧氣於基板W之前表面上方空間與基板W之後表面下方空間之間流動。此外，能夠改變對於基板W之前表面之乾燥製程和對於基板W之後表面之乾燥製程之順序。詳言之，能夠首先乾燥基板W之後表面然後乾燥基板W之前表面。乾燥製程之具體細節與第一實施例者相同。 The space above the surface before the substrate W and the space below the surface after the substrate W are separated from each other by the auxiliary rotating cover 42. Therefore, the process of drying the surface of the substrate W and the process of drying the surface after the substrate W hardly affect each other. In detail, the auxiliary rotary cover 42 prevents the mist of the liquid from flowing between the space above the surface before the substrate W and the space below the surface after the substrate W. Further, the order of the drying process for the front surface of the substrate W and the drying process for the surface after the substrate W can be changed. In detail, it is possible to first dry the surface after the substrate W and then dry the surface before the substrate W. The specific details of the drying process are the same as those of the first embodiment.

第12圖為依照本發明之第三實施例之基板洗淨裝置之示意垂直剖面圖。依照第三實施例之基板洗淨裝置之相 同於依照第一實施例之基板洗淨裝置之部件者係以相同的元件符號表示，而於下文中將不再作詳細的說明。依照第三實施例中基板洗淨裝置之操作細節係與依照第一實施例之基板洗淨裝置之操作細節相同，於下文中將不再作詳細說明。 Figure 12 is a schematic vertical sectional view of a substrate cleaning apparatus in accordance with a third embodiment of the present invention. Phase of the substrate cleaning device according to the third embodiment The components of the substrate cleaning apparatus according to the first embodiment are denoted by the same reference numerals, and will not be described in detail hereinafter. The details of the operation of the substrate cleaning apparatus according to the third embodiment are the same as those of the substrate cleaning apparatus according to the first embodiment, and will not be described in detail hereinafter.

依照第三實施例之基板洗淨裝置其不同於依照第一實施例之基板洗淨裝置之處在於固定蓋45係設在旋轉蓋3之周圍。此固定蓋45不可旋轉，並成形為用以覆蓋旋轉蓋3之整個外周表面。於旋轉蓋3之外周表面和固定蓋45之內周表面之間形成有一小間隙。固定蓋45具有排出口46。 固定蓋45具有上端，其直徑實質上相同或稍微大於旋轉蓋3之上端之直徑。固定蓋45具有下端，其係定位於裙28之下端下方。因此，固定蓋45係成形為覆蓋旋轉蓋3和裙28之整個外周表面。 The substrate cleaning apparatus according to the third embodiment is different from the substrate cleaning apparatus according to the first embodiment in that the fixing cover 45 is provided around the rotary cover 3. This fixing cover 45 is not rotatable and is shaped to cover the entire outer peripheral surface of the rotary cover 3. A small gap is formed between the outer peripheral surface of the rotary cover 3 and the inner peripheral surface of the fixed cover 45. The fixed cover 45 has a discharge port 46. The fixing cover 45 has an upper end whose diameter is substantially the same or slightly larger than the diameter of the upper end of the rotary cover 3. The fixed cover 45 has a lower end that is positioned below the lower end of the skirt 28. Therefore, the fixing cover 45 is shaped to cover the entire outer peripheral surface of the rotary cover 3 and the skirt 28.

設置固定蓋45之理由如下。當旋轉蓋3連同基板W旋轉時，旋轉蓋3可能擾亂其外周表面附近之氣體，而產生稍微旋轉之氣流。此旋轉氣流可能會載送液體之霧氣回到基板W之表面。旋轉氣流亦可能載送液體至清洗室(亦即，清洗空間)之壁上，並可能載送清洗室內之大氣至基板W之表面。固定蓋45能夠防止產生此種旋轉氣流，並因此防止於基板W上產生水痕和於基板W之背面產生污染。 The reason why the fixing cover 45 is provided is as follows. When the rotary cover 3 is rotated together with the substrate W, the rotary cover 3 may disturb the gas in the vicinity of its outer peripheral surface to generate a slightly rotating air flow. This swirling airflow may carry the mist of the liquid back to the surface of the substrate W. The swirling gas stream may also carry liquid to the wall of the cleaning chamber (i.e., the cleaning space) and may carry the atmosphere in the cleaning chamber to the surface of the substrate W. The fixing cover 45 can prevent such a swirling airflow from being generated, and thus prevents water marks from being generated on the substrate W and contamination on the back surface of the substrate W.

固定蓋45和旋轉蓋3之間之間隙最好盡可能地小，以便防止在間隙中之氣體被旋轉的旋轉蓋3擾亂並朝向基板W流回。排出口46較佳係耦接至一吸引源(未顯示)，用以 在乾燥基板W時從固定蓋45和旋轉蓋3之間的間隙強制抽出氣體。當操作吸引源時，係於旋轉蓋3和固定蓋45之間的小間隙中產生氣流，如第13圖中所示。結果，一度流入到間隙中之氣體於旋轉蓋3旋轉期間不會朝向基板W流回。 The gap between the fixed cover 45 and the rotary cover 3 is preferably as small as possible in order to prevent the gas in the gap from being disturbed by the rotating rotary cover 3 and flowing back toward the substrate W. The discharge port 46 is preferably coupled to a suction source (not shown) for The gas is forcibly extracted from the gap between the fixed cover 45 and the rotary cover 3 when the substrate W is dried. When the suction source is operated, an air flow is generated in a small gap between the rotary cover 3 and the fixed cover 45 as shown in Fig. 13. As a result, the gas once flowing into the gap does not flow back toward the substrate W during the rotation of the rotary cover 3.

第14圖為依照本發明之第三實施例之基板洗淨裝置之變形例之示意垂直剖面圖。如第14圖中所示，複數個鰭片50固定於旋轉蓋3之外周表面。鰭片50能夠防止已流入到固定蓋45和旋轉蓋3之間的間隙的氣體由於旋轉蓋3之旋轉而回流。旋轉蓋3之外周表面可以具有螺旋溝槽，而非鰭片50，用來引致間隙中的氣體由於旋轉蓋3之旋轉而向下流動。 Figure 14 is a schematic vertical sectional view showing a modification of the substrate cleaning apparatus according to the third embodiment of the present invention. As shown in FIG. 14, a plurality of fins 50 are fixed to the outer peripheral surface of the rotary cover 3. The fins 50 can prevent the gas that has flowed into the gap between the fixed cover 45 and the rotary cover 3 from flowing back due to the rotation of the rotary cover 3. The outer peripheral surface of the rotary cover 3 may have a spiral groove instead of the fin 50 for causing the gas in the gap to flow downward due to the rotation of the rotary cover 3.

依照第三實施例之固定蓋45可以應用於依照第一和第二實施例之基板洗淨裝置。 The fixing cover 45 according to the third embodiment can be applied to the substrate cleaning apparatus according to the first and second embodiments.

第15圖為依照本發明之第四實施例之基板洗淨裝置之示意垂直剖面圖。依照第四實施例之基板洗淨裝置之相同於依照第一實施例之基板洗淨裝置部分者，係標以相同的元件符號，且於下文中不再作詳細之說明。於下文中不再說明之依照第四實施例之基板洗淨裝置之操作細節，係相同於依照第一實施例之基板洗淨裝置者。 Figure 15 is a schematic vertical sectional view showing a substrate cleaning apparatus in accordance with a fourth embodiment of the present invention. The substrate cleaning apparatus according to the fourth embodiment is the same as the substrate cleaning apparatus according to the first embodiment, and is denoted by the same reference numerals and will not be described in detail below. The details of the operation of the substrate cleaning apparatus according to the fourth embodiment, which will not be described hereinafter, are the same as those of the substrate cleaning apparatus according to the first embodiment.

如第15圖中所示，液體吸收器53固定於旋轉蓋3之內周表面。液體吸收器53大體上覆蓋旋轉蓋3之整個內周表面。液體吸收器53可以由PVA(聚乙烯乙醇)之海棉、多孔材料、或篩孔布製成。為了容易從基板W補獲液體，液 體吸收器53較佳應為親水性者。液體吸收器53較佳亦應在其中具有連續的細孔，以便引導所捕獲的液體向下流經液體吸收器53至排放孔25。 As shown in Fig. 15, the liquid absorber 53 is fixed to the inner peripheral surface of the rotary cover 3. The liquid absorber 53 substantially covers the entire inner peripheral surface of the rotary cover 3. The liquid absorber 53 may be made of sponge, porous material, or mesh cloth of PVA (polyethylene ethanol). In order to easily replenish liquid from the substrate W, the liquid The body absorber 53 should preferably be hydrophilic. The liquid absorber 53 should preferably also have continuous pores therein to direct the captured liquid downwardly through the liquid absorber 53 to the discharge orifice 25.

於具有上述結構之第四實施例中，液體吸收器53亦能夠吸收液體衝撞在旋轉蓋3上之衝擊。液體吸收器53亦可應用於依照第一至第三實施例之基板洗淨裝置。 In the fourth embodiment having the above structure, the liquid absorber 53 is also capable of absorbing the impact of the liquid colliding on the rotary cover 3. The liquid absorber 53 can also be applied to the substrate cleaning apparatus according to the first to third embodiments.

第16圖為依照本發明第五實施例之基板洗淨裝置之示意垂直剖面圖。依照第五實施例之基板洗淨裝置之相同於依照第三實施例之基板洗淨裝置之部件者係以相同的元件符號表示，且於下文中將不再作詳細的說明。於下文中將不再作詳細說明之依照第五實施例中基板洗淨裝置之操作細節係與依照第一實施例之基板洗淨裝置之操作細節相同。 Figure 16 is a schematic vertical sectional view of a substrate cleaning apparatus in accordance with a fifth embodiment of the present invention. The components of the substrate cleaning apparatus according to the fifth embodiment which are the same as those of the substrate cleaning apparatus according to the third embodiment are denoted by the same reference numerals and will not be described in detail hereinafter. The details of the operation of the substrate cleaning apparatus according to the fifth embodiment will be the same as those of the substrate cleaning apparatus according to the first embodiment, which will not be described in detail hereinafter.

如第16圖中所示，清洗室51配置在固定蓋45之周圍，而排出口47設在清洗室51之下部。排出口47和固定蓋45之排出口46耦接至一吸引源(未顯示)。依照此實施例，未顯示之吸引源和耦接至氣體出口通道31之吸引源32之操作係於清洗室51中整體地形成向下流動之氣體。 尤其是，當於清洗室51中之氣體經由排出口47排放時，向下流動之氣體係沿著固定蓋45之外周表面形成。此向下流動之氣體係防止存在於固定蓋45之外周表面與清洗室51之內表面之間之水滴和周圍大氣再次附著於基板W上，並亦防止在清洗室51中之霧氣再附著於基板W上。 As shown in Fig. 16, the cleaning chamber 51 is disposed around the fixed cover 45, and the discharge port 47 is provided at the lower portion of the cleaning chamber 51. The discharge port 47 and the discharge port 46 of the fixed cover 45 are coupled to a suction source (not shown). According to this embodiment, the operation of the suction source not shown and the suction source 32 coupled to the gas outlet passage 31 integrally forms a downward flowing gas in the cleaning chamber 51. In particular, when the gas in the cleaning chamber 51 is discharged through the discharge port 47, the downwardly flowing gas system is formed along the outer peripheral surface of the fixed cover 45. This downward flowing gas system prevents the water droplets and the surrounding atmosphere existing between the outer peripheral surface of the fixed cover 45 and the inner surface of the cleaning chamber 51 from reattaching to the substrate W, and also prevents the mist in the cleaning chamber 51 from reattaching to the substrate On the substrate W.

第17圖為依照本發明之參考例之基板洗淨裝置之示 意垂直剖面圖。 Figure 17 is a view showing the substrate cleaning apparatus according to the reference example of the present invention. Vertical section view.

如第17圖中所示，基板洗淨裝置包含：基板固持機構60，係組構成用以水平地固持基板W；馬達(旋轉機構)2，係組構成經由該基板固持機構60使該基板W以其自己的中心軸旋轉；固定蓋70，設在該基板W之周圍；以及前噴嘴4，用來供應純水做為清洗液至該基板W之前表面上。基板固持機構60包含工作台61、支撐該工作台61之中空支撐軸62、和安裝在工作台61之上表面上的複數個夾爪10。 As shown in FIG. 17, the substrate cleaning apparatus includes a substrate holding mechanism 60 configured to horizontally hold the substrate W, and a motor (rotating mechanism) 2 through which the substrate is configured to hold the substrate W. Rotating with its own central axis; a fixed cover 70 disposed around the substrate W; and a front nozzle 4 for supplying pure water as a cleaning liquid onto the front surface of the substrate W. The substrate holding mechanism 60 includes a table 61, a hollow support shaft 62 that supports the table 61, and a plurality of jaws 10 mounted on the upper surface of the table 61.

支撐軸62在其中容置有：後噴嘴17，其係耦接至清洗液供應源；和氣體噴嘴18，其係耦接至乾燥氣體供應源。清洗液供應源係儲存純水於其中作為清洗液，並且經由後噴嘴17供應該純水至基板W之後表面。該乾燥氣體供應源係儲存氮氣或乾燥空氣於其中作為乾燥氣體，並且經由氣體噴嘴18供應乾燥氣體至該基板W之後表面。 The support shaft 62 houses therein a rear nozzle 17 coupled to a cleaning liquid supply source, and a gas nozzle 18 coupled to the dry gas supply source. The cleaning liquid supply source stores pure water therein as a cleaning liquid, and supplies the pure water to the rear surface of the substrate W via the rear nozzle 17. The dry gas supply source stores nitrogen or dry air therein as a dry gas, and supplies a dry gas to the rear surface of the substrate W via the gas nozzle 18.

前噴嘴4指向基板W之中央。前噴嘴4耦接至圖中未顯示之純水供應源(亦即，清洗液供應源)，並且從該純水供應源供應純水至基板W之前表面之中央。用來執行諾塔哥尼乾燥法之二個平行噴嘴20和21係配置在基板W之上。噴嘴20係用來供應IPA蒸汽(異丙醇和氮氣體之混合物)至基板W之前表面上。噴嘴21係用來供應純水至基板W之前表面上，以便防止基板W之前表面變乾。噴嘴20和21可移動於基板W之徑向方向。 The front nozzle 4 is directed to the center of the substrate W. The front nozzle 4 is coupled to a pure water supply source (i.e., a cleaning liquid supply source) not shown in the drawing, and supplies pure water from the pure water supply source to the center of the front surface of the substrate W. Two parallel nozzles 20 and 21 for performing the Notagoni drying method are disposed above the substrate W. The nozzle 20 is used to supply IPA vapor (a mixture of isopropanol and nitrogen gas) onto the front surface of the substrate W. The nozzle 21 is used to supply pure water to the front surface of the substrate W in order to prevent the front surface of the substrate W from drying out. The nozzles 20 and 21 are movable in the radial direction of the substrate W.

固定蓋70具有徑向向內傾斜之內周表面。固定蓋70 之上端係定位於基板W上方。液體吸收器53固定於固定蓋70之內周表面。液體吸收器53大體上覆蓋固定蓋70之整個內周表面。液體吸收器53可以由PVA(聚乙烯乙醇)之海棉、多孔材料、或篩孔布製成。為了容易從基板W補獲液體，液體吸收器53較佳應為親水性者。液體吸收器53較佳亦應在其中具有連續的細孔，以便引導所捕獲的液體向下流經液體吸收器53。 The fixed cover 70 has an inner peripheral surface that is inclined radially inward. Fixed cover 70 The upper end is positioned above the substrate W. The liquid absorber 53 is fixed to the inner peripheral surface of the fixing cover 70. The liquid absorber 53 substantially covers the entire inner peripheral surface of the fixing cover 70. The liquid absorber 53 may be made of sponge, porous material, or mesh cloth of PVA (polyethylene ethanol). In order to easily replenish the liquid from the substrate W, the liquid absorber 53 should preferably be hydrophilic. The liquid absorber 53 should preferably also have continuous pores therein to direct the captured liquid to flow downwardly through the liquid absorber 53.

用來回收液體(例如，來自前噴嘴4和後噴嘴17之被供應做為清洗液之純水、和供應自噴嘴21之純水)之液體儲槽63係配置於工作台61和固定蓋70之下方。液體儲槽63於其底部具有出水口64。出水口64耦接到一吸引源(未顯示)，而使得由液體儲槽63所回收之液體連同環境氣體經由出水口64而被排放。 The liquid reservoir 63 for recovering the liquid (for example, the pure water supplied from the front nozzle 4 and the rear nozzle 17 as the cleaning liquid, and the pure water supplied from the nozzle 21) is disposed on the table 61 and the fixed cover 70. Below it. The liquid reservoir 63 has a water outlet 64 at its bottom. The water outlet 64 is coupled to a suction source (not shown) such that the liquid recovered by the liquid reservoir 63 is discharged along with the ambient gas via the water outlet 64.

於此實例中之基板洗淨裝置可操作成依照與第一實施例相同的處理程序而執行於基板W上之乾燥製程。詳言之，供給馬達2能量以旋轉基板W。然後，前噴嘴4和後噴嘴17分別供應純水至基板W之前表面和後表面，以便用純水沖洗基板W之整體。從旋轉中之基板W去除純水，經去除之純水由固定蓋70所捕獲，並由該液體儲槽63所回收。當如此沖洗基板W時，二個噴嘴20、21係位在遠離基板W之給定的待命位置。 The substrate cleaning apparatus in this example is operable to perform a drying process on the substrate W in accordance with the same processing procedure as the first embodiment. In detail, the motor 2 is supplied with energy to rotate the substrate W. Then, the front nozzle 4 and the rear nozzle 17 respectively supply pure water to the front surface and the rear surface of the substrate W to rinse the entirety of the substrate W with pure water. Pure water is removed from the rotating substrate W, and the removed pure water is captured by the fixed cover 70 and recovered by the liquid storage tank 63. When the substrate W is thus washed, the two nozzles 20, 21 are tied at a given standby position away from the substrate W.

然後，停止供應純水，並將前噴嘴4移至遠離基板W之給定待命位置。此二個噴嘴20、21被移至基板W上方之操作位置。當基板W以150至300轉/分鐘之低速範圍旋 轉時，噴嘴20供應IPA蒸汽而噴嘴21供應純水至基板W之前表面。於此操作期間，後噴嘴17供應純水至基板W之後表面。二個噴嘴20和21被同時移動於基板W之徑向方向，藉此乾燥基板W之前表面(上表面)。 Then, the supply of pure water is stopped, and the front nozzle 4 is moved to a given standby position away from the substrate W. The two nozzles 20, 21 are moved to an operating position above the substrate W. When the substrate W is rotated at a low speed range of 150 to 300 rpm At the time of turning, the nozzle 20 supplies IPA vapor and the nozzle 21 supplies pure water to the front surface of the substrate W. During this operation, the rear nozzle 17 supplies pure water to the surface behind the substrate W. The two nozzles 20 and 21 are simultaneously moved in the radial direction of the substrate W, thereby drying the front surface (upper surface) of the substrate W.

其後，將二個噴嘴20、21移至其待命位置，並停止從後噴嘴17供應純水。然後，基板W以1000至1500轉/分鐘之高速範圍旋轉，而從基板W之後表面去除純水。於此操作期間，氣體噴嘴18供應乾燥氣體至基板W之後表面。 以此種方式，乾燥基板W之後表面。 Thereafter, the two nozzles 20, 21 are moved to their standby positions, and the supply of pure water from the rear nozzles 17 is stopped. Then, the substrate W is rotated at a high speed range of 1000 to 1,500 rpm, and pure water is removed from the surface after the substrate W. During this operation, the gas nozzle 18 supplies dry gas to the surface behind the substrate W. In this way, the surface behind the substrate W is dried.

於具有上述結構之此例中，液體吸收器53能夠吸收液體衝撞在旋轉蓋3上之衝擊。 In this example having the above structure, the liquid absorber 53 can absorb the impact of the liquid colliding on the rotary cover 3.

第18圖為依照本發明之另一參考例之基板洗淨裝置之示意垂直剖面圖。於下文中將不再說明之第18圖中所示之基板洗淨裝置之結構和操作細節係與第17圖中所示之基板洗淨裝置之結構和操作細節相同，而將不再作重複說明。 Figure 18 is a schematic vertical sectional view showing a substrate cleaning apparatus according to another reference example of the present invention. The structure and operation details of the substrate cleaning apparatus shown in Fig. 18, which will not be described later, are the same as those of the substrate cleaning apparatus shown in Fig. 17, and will not be repeated. Description.

如第18圖中所示，基板洗淨裝置包含中空圓筒狀屏蔽蓋65，該屏蔽蓋65成形為圍繞工作台61和支撐軸62。屏蔽蓋65具有：上端，係位於與工作台61實質相同的高度；和下端，係固定於液體儲槽63。於此例中，未提供上述液體吸收器53。因為工作台61和支撐軸62用屏蔽蓋65覆蓋，因此當工作台61和支撐軸62旋轉時可防止形成環境氣體之旋轉流動。結果，亦防止液體之霧氣再附著在基板W之表面，否則該霧氣將由此種環境氣體之旋轉流動所載 送。 As shown in FIG. 18, the substrate cleaning apparatus includes a hollow cylindrical shield cover 65 which is formed to surround the table 61 and the support shaft 62. The shield cover 65 has an upper end that is substantially at the same height as the table 61, and a lower end that is fixed to the liquid reservoir 63. In this case, the above liquid absorber 53 is not provided. Since the table 61 and the support shaft 62 are covered with the shield cover 65, the rotational flow of the ambient gas can be prevented from being formed when the table 61 and the support shaft 62 rotate. As a result, the mist of the liquid is prevented from reattaching to the surface of the substrate W, otherwise the mist will be carried by the rotating flow of such ambient gas. give away.

依照第一實施例之旋轉蓋3可以附加至顯示於第17和18圖中之基板洗淨裝置。 The rotary cover 3 according to the first embodiment can be attached to the substrate cleaning device shown in Figs.

第19和20圖為依照本發明之又另一參考例之基板洗淨裝置之示意垂直剖面圖。於下文中將不再說明之第19和20圖中所示之基板洗淨裝置之結構和操作細節，係與第17圖中所示之基板洗淨裝置之結構和操作細節相同，而將不再作重複說明。 19 and 20 are schematic vertical sectional views of a substrate cleaning apparatus according to still another reference example of the present invention. The structural and operational details of the substrate cleaning apparatus shown in Figures 19 and 20, which will not be described hereinafter, are the same as those of the substrate cleaning apparatus shown in Fig. 17, but will not Repeat the explanation.

於此例中，固定蓋70係可垂直移動。如上所述，當乾燥基板W之前表面和當乾燥基板W之後表面時，該基板W係以不同的速度旋轉。因此，較理想之情況是依據將乾燥基板W之哪一面而改變固定蓋70之位置。詳言之，當乾燥基板W之前表面時，固定蓋70是在正常位置，如第19圖中所示。如上所述，當乾燥基板W之前表面時該基板W係以低速旋轉。因此，從旋轉之基板W去除之水滴係自由落下然後衝撞於固定蓋70之內周表面上。因為固定蓋70和基板W之周邊之間的距離大，因此衝撞於固定蓋70之內周表面上之水滴幾乎不會彈回到基板W。 In this example, the fixed cover 70 is vertically movable. As described above, when the surface before the substrate W is dried and when the surface after the substrate W is dried, the substrate W is rotated at different speeds. Therefore, it is preferable to change the position of the fixing cover 70 depending on which side of the substrate W is to be dried. In detail, when the front surface of the substrate W is dried, the fixing cover 70 is in the normal position as shown in Fig. 19. As described above, the substrate W is rotated at a low speed when the front surface of the substrate W is dried. Therefore, the water droplets removed from the rotating substrate W are free to fall and then collide with the inner peripheral surface of the fixed cover 70. Since the distance between the fixing cover 70 and the periphery of the substrate W is large, water droplets that collide with the inner circumferential surface of the fixing cover 70 hardly bounce back to the substrate W.

當乾燥基板W之後表面時，基板W係以高速旋轉。 因此，從旋轉之基板W去除之水滴實質上以直線方式行進並以高速衝撞於固定蓋70之內周表面上，如第20圖中所示。此外，當夾爪10和工作台61以高速旋轉時，環繞在基板W周圍之氣體被攪亂，而形成旋轉氣流。此旋轉氣流係不希望的，因為旋轉氣流可能載送水滴和霧氣至基板W 之表面。依照此例，係在固定蓋70在較低位置之情形下乾燥基板W之後表面。詳言之，固定蓋70降低至該固定蓋70之上端係與基板W實質上相同高度之位置。於此位置，基板W之周圍與固定蓋70之間之距離小。因此，防止水滴和霧氣從基板W之後表面流至前表面。 When the surface behind the substrate W is dried, the substrate W is rotated at a high speed. Therefore, the water droplets removed from the rotating substrate W travel substantially in a straight line and collide with the inner peripheral surface of the fixed cover 70 at a high speed as shown in FIG. Further, when the jaw 10 and the table 61 are rotated at a high speed, the gas surrounding the substrate W is disturbed to form a swirling airflow. This swirling airflow is undesirable because the swirling airflow may carry water droplets and mist to the substrate W. The surface. According to this example, the surface of the substrate W is dried while the fixing cover 70 is at a lower position. In detail, the fixing cover 70 is lowered to a position where the upper end of the fixing cover 70 is substantially the same height as the substrate W. At this position, the distance between the periphery of the substrate W and the fixed cover 70 is small. Therefore, water droplets and mist are prevented from flowing from the rear surface of the substrate W to the front surface.

第21圖為依照本發明第六實施例之基板洗淨裝置之示意垂直剖面圖。依照第六實施例基板洗淨裝置之相同於依照第一實施例之基板洗淨裝置之該等部分者，係以相同的元件符號表示，且下文中將不作詳細說明。依照第六實施例之基板洗淨裝置之操作細節相同於依照第一實施例之基板洗淨裝置者，以下將不作說明。 Figure 21 is a schematic vertical sectional view showing a substrate cleaning apparatus in accordance with a sixth embodiment of the present invention. The parts of the substrate cleaning apparatus according to the sixth embodiment which are the same as those of the substrate cleaning apparatus according to the first embodiment are denoted by the same reference numerals and will not be described in detail below. The operation details of the substrate cleaning apparatus according to the sixth embodiment are the same as those of the substrate cleaning apparatus according to the first embodiment, and will not be described below.

如第21圖中所示，內部旋轉蓋75係設置於旋轉蓋3之徑向內側。此內部旋轉蓋75固定於工作台11之第二工作台11B。旋轉蓋(第一旋轉蓋)3和內部旋轉蓋(第二旋轉蓋)75藉由複數個支撐臂80而彼此耦接。因此，內部旋轉蓋75和旋轉蓋3係可旋轉地結合在一起。間隙形成於內部旋轉蓋75和旋轉蓋3之間。 As shown in Fig. 21, the inner rotary cover 75 is provided on the radially inner side of the rotary cover 3. This inner rotary cover 75 is fixed to the second table 11B of the table 11. The rotary cover (first rotary cover) 3 and the inner rotary cover (second rotary cover) 75 are coupled to each other by a plurality of support arms 80. Therefore, the inner rotary cover 75 and the rotary cover 3 are rotatably coupled together. A gap is formed between the inner rotary cover 75 and the rotary cover 3.

第22A圖為內部旋轉蓋75和旋轉蓋3之放大垂直剖面圖，而第22B圖為內部旋轉蓋75和夾爪10之平面圖。 內部旋轉蓋75具有具平滑拱形垂直剖面之外周表面。內部旋轉蓋75之外周表面相對於水平面之角度係從內部旋轉蓋75之上端之最小值漸漸增加至下端之最大值。詳言之，內部旋轉蓋75之外周表面相對於水平面之角度係於其上端約為0度、而於其下端約為90度。 Fig. 22A is an enlarged vertical sectional view of the inner rotary cover 75 and the rotary cover 3, and Fig. 22B is a plan view of the inner rotary cover 75 and the jaws 10. The inner rotary cover 75 has a peripheral surface having a smooth arched vertical cross section. The angle of the outer peripheral surface of the inner rotary cover 75 with respect to the horizontal plane gradually increases from the minimum value of the upper end of the inner rotary cover 75 to the maximum value of the lower end. In detail, the angle of the outer peripheral surface of the inner rotary cover 75 with respect to the horizontal plane is about 0 degrees at the upper end and about 90 degrees at the lower end thereof.

內部旋轉蓋75之上端係稍為定位於藉由夾爪10所固持之基板W之下方。換言之，內部旋轉蓋75之外周表面之上端係定位於基板W之上表面之下方，而內部旋轉蓋75之內周表面之上端係定位於基板W之下表面之上方。 內部旋轉蓋75之上端位於接近基板W之周圍。內部旋轉蓋75之上端之直徑稍微大於基板W之直徑。內部旋轉蓋75之內周表面較佳為亦具有平滑拱形剖面，如同其外周表面。如第22B圖中所示，內部旋轉蓋75之上端具有複數個凹部75a，各凹部75a具有對應於夾爪10的形狀之形狀。 The upper end of the inner rotary cover 75 is slightly positioned below the substrate W held by the jaws 10. In other words, the upper end surface of the inner rotating cover 75 is positioned below the upper surface of the substrate W, and the upper end surface of the inner rotating cover 75 is positioned above the lower surface of the substrate W. The upper end of the inner rotary cover 75 is located near the periphery of the substrate W. The diameter of the upper end of the inner rotary cover 75 is slightly larger than the diameter of the substrate W. The inner peripheral surface of the inner rotary cover 75 preferably also has a smooth arched profile like its outer peripheral surface. As shown in Fig. 22B, the upper end of the inner rotary cover 75 has a plurality of recesses 75a, each of which has a shape corresponding to the shape of the jaws 10.

內部旋轉蓋75之外周表面包括從基板W之周圍向下延伸的平滑拋物線。因此，當基板W旋轉時，於基板W上之液體會在液體之表面張力下平穩地沿著內部旋轉蓋75之外周表面朝向下方向被引導。因此，流動之液體不會破裂成為水滴或霧氣。因為內部旋轉蓋75之外周表面之上端較基板W之上端稍為低些，因此液體較不易被困陷於基板W與內部旋轉蓋75之間之間隙中。若內部旋轉蓋75之外周表面之上端較基板W之上端高，則來自基板W之液體流會於基板W與內部旋轉蓋75之間破碎而轉變成水滴或霧氣。因此，內部旋轉蓋75之外周表面之上端係位於與基板W之上表面相同的高度，或較佳為位於基板W之上表面之稍微下方。 The outer peripheral surface of the inner rotary cover 75 includes a smooth parabola extending downward from the periphery of the substrate W. Therefore, when the substrate W is rotated, the liquid on the substrate W is smoothly guided downward along the outer peripheral surface of the inner rotary cover 75 under the surface tension of the liquid. Therefore, the flowing liquid does not break into water droplets or mist. Since the outer peripheral surface of the inner rotary cover 75 is slightly lower than the upper end of the substrate W, the liquid is less likely to be trapped in the gap between the substrate W and the inner rotary cover 75. If the upper end surface of the outer peripheral surface of the inner rotary cover 75 is higher than the upper end of the substrate W, the liquid flow from the substrate W is broken between the substrate W and the inner rotary cover 75 to be converted into water droplets or mist. Therefore, the upper end surface of the outer peripheral surface of the inner rotary cover 75 is located at the same height as the upper surface of the substrate W, or preferably slightly below the upper surface of the substrate W.

旋轉蓋3之內周表面與內部旋轉蓋75之外周表面具有實質上相同的形狀。詳言之，旋轉蓋3之內周表面具有平滑拱形垂直剖面。旋轉蓋3之內周表面相對於水平面之角 度係從旋轉蓋3之上端之最小值漸漸增加至下端之最大值。詳言之，旋轉蓋3之內周表面相對於水平面之角度係於其上端約為0度、而於其下端約為90度。雖然圖中未顯示，但是旋轉蓋3之上端亦具有形狀相似於內部旋轉蓋75之形狀的複數個凹部。 The inner circumferential surface of the rotary cover 3 has substantially the same shape as the outer circumferential surface of the inner rotary cover 75. In detail, the inner peripheral surface of the rotary cover 3 has a smooth arched vertical cross section. The angle of the inner peripheral surface of the rotary cover 3 with respect to the horizontal plane The degree gradually increases from the minimum value of the upper end of the rotary cover 3 to the maximum value of the lower end. In detail, the angle of the inner peripheral surface of the rotary cover 3 with respect to the horizontal plane is about 0 degrees at the upper end and about 90 degrees at the lower end thereof. Although not shown in the drawings, the upper end of the rotary cover 3 also has a plurality of recesses shaped like the shape of the inner rotary cover 75.

支撐臂80固定於內部旋轉蓋75之外周表面和旋轉蓋3之內周表面。詳言之，支撐臂80配置於內部旋轉蓋75之外周表面與旋轉蓋3之內周表面間之間隙中。第23A圖為固定於內部旋轉蓋之支撐臂80之從上方觀看時之平面圖，而第23B圖為支撐臂80之從徑向外側觀看時之圖示。 於第23A和23B圖中，為便於說明而未顯示旋轉蓋3。各支撐臂80具有葉片之形狀，因此當內部旋轉蓋75和旋轉蓋3旋轉時，支撐臂80會於內部旋轉蓋75與旋轉蓋3間之間隙中產生向下流動之氣體。 The support arm 80 is fixed to the outer peripheral surface of the inner rotary cover 75 and the inner peripheral surface of the rotary cover 3. In detail, the support arm 80 is disposed in a gap between the outer circumferential surface of the inner rotary cover 75 and the inner circumferential surface of the rotary cover 3. Fig. 23A is a plan view of the support arm 80 fixed to the inner rotary cover as viewed from above, and Fig. 23B is a view of the support arm 80 as viewed from the radially outer side. In the 23A and 23B drawings, the rotary cover 3 is not shown for convenience of explanation. Each of the support arms 80 has the shape of a blade, so that when the inner rotary cover 75 and the rotary cover 3 are rotated, the support arm 80 generates a downward flowing gas in the gap between the inner rotary cover 75 and the rotary cover 3.

內部旋轉蓋75和旋轉蓋3連同基板W一起旋轉。供應至基板W之上表面之液體(例如，純水)藉由離心力從基板W移至內部旋轉蓋75，並沿著內部旋轉蓋75之外周表面向下流。於旋轉期間，其功能如葉片之支撐臂80係於內部旋轉蓋75與旋轉蓋3之間間隙中形成向下氣體流。因此，液體之霧氣和水滴藉由向下氣體流而被強制向下移動，而被防止附著於基板W之表面。可適當地調整內部旋轉蓋75與旋轉蓋3之間之間隙，以便使得液體可平順地向下流動並防止霧氣進入基板W上方空間。 The inner rotary cover 75 and the rotary cover 3 rotate together with the substrate W. The liquid (for example, pure water) supplied to the upper surface of the substrate W is moved from the substrate W to the inner rotary cover 75 by centrifugal force, and flows downward along the outer peripheral surface of the inner rotary cover 75. During rotation, the support arm 80, which functions as a blade, is attached to the gap between the inner rotary cover 75 and the rotary cover 3 to form a downward gas flow. Therefore, the mist and the water droplets of the liquid are forcibly moved downward by the downward gas flow, and are prevented from adhering to the surface of the substrate W. The gap between the inner rotary cover 75 and the rotary cover 3 can be appropriately adjusted so that the liquid can smoothly flow downward and prevent the mist from entering the space above the substrate W.

內部旋轉蓋75和旋轉蓋3之表面最好是親水性表面， 以便一旦水滴附著於內部旋轉蓋75和旋轉蓋3時不會輕易釋放水滴。較理想情況是，內部旋轉蓋75外周表面和/或旋轉蓋3之內周表面具有螺旋狀凹槽，用來朝向引導於內部旋轉蓋75上和旋轉蓋3上之液體。 The surfaces of the inner rotary cover 75 and the rotary cover 3 are preferably hydrophilic surfaces. Therefore, water droplets are not easily released once the water droplets adhere to the inner rotary cover 75 and the rotary cover 3. Preferably, the outer peripheral surface of the inner rotary cover 75 and/or the inner peripheral surface of the rotary cover 3 has a spiral groove for directing the liquid guided on the inner rotary cover 75 and on the rotary cover 3.

內部旋轉蓋75、旋轉蓋3、和基板W位於清洗室51中。清洗室51於其底部具有氣體出口51a和液體出口51b。 供應至基板W之譬如純水之液體係經由液體出口51b被排放，而藉由旋轉的支撐臂80形成向下氣流之氣體係經由氣體出口51a被排放。真空泵可耦接至氣體出口51a而使得氣體被強制從清洗室51排放。 The inner rotary cover 75, the rotary cover 3, and the substrate W are located in the cleaning chamber 51. The cleaning chamber 51 has a gas outlet 51a and a liquid outlet 51b at the bottom thereof. The liquid system supplied to the substrate W such as pure water is discharged through the liquid outlet 51b, and the gas system which forms the downward flow by the rotating support arm 80 is discharged via the gas outlet 51a. The vacuum pump may be coupled to the gas outlet 51a such that the gas is forcibly discharged from the cleaning chamber 51.

第24圖為顯示依照本發明第六實施例之基板洗淨裝置之變形例的示意垂直剖面圖。於此變形例中，係加上固定蓋85。如第24圖中所示，此固定蓋85係設置成圍繞旋轉蓋3。固定蓋85為不可旋轉，並具有位於旋轉蓋3之下端下方的下端。如此，固定蓋85係成形為覆蓋旋轉蓋3之整個外周表面。於旋轉蓋3之外周表面和固定蓋85之內周表面之間係形成一小間隙。雖然圖中未顯示，但是固定蓋85之上端係具有複數個凹部，其各具有對應於各夾爪10的形狀之形狀。固定蓋85之上端之直徑實質上與旋轉蓋3之上端之直徑相同或稍微大些。設置固定蓋85之理由與設置上述之固定蓋45之理由相同。 Figure 24 is a schematic vertical sectional view showing a modification of the substrate cleaning apparatus in accordance with the sixth embodiment of the present invention. In this modification, a fixing cover 85 is added. As shown in Fig. 24, this fixing cover 85 is provided to surround the rotary cover 3. The fixed cover 85 is non-rotatable and has a lower end located below the lower end of the rotary cover 3. Thus, the fixing cover 85 is shaped to cover the entire outer peripheral surface of the rotary cover 3. A small gap is formed between the outer peripheral surface of the rotary cover 3 and the inner peripheral surface of the fixed cover 85. Although not shown in the drawings, the upper end of the fixing cover 85 has a plurality of recesses each having a shape corresponding to the shape of each of the jaws 10. The diameter of the upper end of the fixed cover 85 is substantially the same as or slightly larger than the diameter of the upper end of the rotary cover 3. The reason why the fixing cover 85 is provided is the same as the reason why the above-described fixing cover 45 is provided.

接著，現將說明具有依照本發明之上述實施例之基板洗淨裝置之拋光裝置之例子。第25圖為具備有依照本發明之第一至第六實施例中之任何其中一者之基板洗淨裝置的 拋光裝置之平面圖。第26圖為第25圖中所示拋光裝置之示意透視圖。如第25圖中所示，拋光裝置具有矩形之外殼100。外殼100之內部空間藉由分隔壁101a、101b、101c而被分隔成裝載及卸載部102、拋光部130(130a、130b)、和清洗部140。 Next, an example of a polishing apparatus having a substrate cleaning apparatus according to the above embodiment of the present invention will now be described. Figure 25 is a view showing a substrate cleaning apparatus having any one of the first to sixth embodiments of the present invention. A plan view of the polishing apparatus. Figure 26 is a schematic perspective view of the polishing apparatus shown in Figure 25. As shown in Fig. 25, the polishing apparatus has a rectangular outer casing 100. The inner space of the outer casing 100 is partitioned into a loading and unloading portion 102, a polishing portion 130 (130a, 130b), and a cleaning portion 140 by partition walls 101a, 101b, 101c.

裝載及卸載部102具有二個或多個前裝載單元120(於第25圖中有3個)，在此前裝載單元120上放置有各儲存許多基板之匣盒(cassette)。前裝載單元120被配置成沿著拋光裝置之寬度方向(垂直於拋光裝置之縱向之方向)彼此鄰接。各前裝載單元120能夠在其上承接開放式匣盒、標準製造介面容器(Standard Manufacturing Interface pod；SMIF pod)、或前開口聯合容器(Front Opening Unified pod；FOUP pod)。SMIF和FOUP為緊密密封之容器，其在其中容置有晶圓匣盒，並用分隔壁覆蓋之，以提供與外部空間隔離之內部環境。 The loading and unloading unit 102 has two or more front loading units 120 (three in FIG. 25) on which the cassettes each storing a plurality of substrates are placed. The front loading unit 120 is configured to abut each other along the width direction of the polishing apparatus (perpendicular to the longitudinal direction of the polishing apparatus). Each of the front loading units 120 can receive an open cassette, a Standard Manufacturing Interface pod (SMIF pod), or a Front Opening Unified pod (FOUP pod) thereon. SMIF and FOUP are tightly sealed containers in which wafer cassettes are housed and covered with a dividing wall to provide an internal environment that is isolated from the external space.

再者，裝載及卸載部102具有移動機構121，其係沿著前裝載單元120之配置方向延伸。第一移載機器人122安置於移動機構121上，並可沿著前裝載單元120之配置方向移動。此第一移載機器人122可操作成在移動機構121上移動，以便存取安裝於前裝載單元120上之晶圓匣盒。 第一移載機器人122具有垂直配置而可獨立使用之二個手。例如，上方的手可用來將經拋光之基板送回至晶圓匣盒，而下方的手可用來移載未拋光之基板。 Furthermore, the loading and unloading unit 102 has a moving mechanism 121 that extends in the direction in which the front loading unit 120 is disposed. The first transfer robot 122 is disposed on the moving mechanism 121 and is movable along the configuration direction of the front loading unit 120. The first transfer robot 122 is operable to move on the moving mechanism 121 to access the wafer cassette mounted on the front loading unit 120. The first transfer robot 122 has two hands that are vertically arranged and can be used independently. For example, the upper hand can be used to return the polished substrate to the wafer cassette, while the lower hand can be used to transfer the unpolished substrate.

裝載及卸載部102係被要求為最清潔之區域。因此， 裝載及卸載部102之內部壓力係隨時被保持成較裝置之外部空間、拋光部130和清洗部140之壓力為高。再者，具有清潔空氣濾清器(譬如HEPA濾清器或ULPA濾清器)之濾清器風扇單元(圖式中未顯示)係設於第一移載機器人122之移動機構121之上方。此濾清器風扇單元係從空氣去除微粒、有毒蒸汽、和有毒氣體以產生清潔的空氣，並恆常地形成向下流動之清潔的空氣。 The loading and unloading unit 102 is required to be the cleanest area. therefore, The internal pressure of the loading and unloading portion 102 is maintained at a higher pressure than the outer space of the device, the polishing portion 130, and the cleaning portion 140 at any time. Furthermore, a filter fan unit (not shown) having a clean air filter (such as a HEPA filter or a ULPA filter) is disposed above the moving mechanism 121 of the first transfer robot 122. This filter fan unit removes particulates, toxic vapors, and toxic gases from the air to create clean air and constantly forms a clean, downward flowing air.

拋光部130為拋光基板之區域。此拋光部130包含第一拋光部130a和第二拋光部130b，在該第一拋光部130a中具有第一拋光單元131A和第二拋光單元131B，在該第二拋光部130b中具有第三拋光單元131C和第四拋光單元131D。如第25圖中所示，第一拋光單元131A、第二拋光單元131B、第三拋光單元131C、和第四拋光單元131D係沿著拋光裝置之縱向配置。 The polishing portion 130 is a region where the substrate is polished. The polishing portion 130 includes a first polishing portion 130a and a second polishing portion 130b, and has a first polishing unit 131A and a second polishing unit 131B in the first polishing portion 130a, and a third polishing portion in the second polishing portion 130b. The unit 131C and the fourth polishing unit 131D. As shown in Fig. 25, the first polishing unit 131A, the second polishing unit 131B, the third polishing unit 131C, and the fourth polishing unit 131D are disposed along the longitudinal direction of the polishing apparatus.

第一拋光單元131A包含：拋光台132A，係固持住拋光墊；頂環133A，係配置成固持基板並按壓該基板頂靠於拋光台132A上之拋光墊之拋光表面，以便拋光該基板；拋光液供應噴嘴134A，用來供應拋光液(例如，漿料)或修整液(例如，純水)至拋光墊之拋光表面；修整器(dresser)135A，用來修整拋光墊；以及噴霧器(atomizer)136A，具有噴嘴，用來將霧化狀態之液體(例如，純水)和氣體(例如，氮氣)之混合物噴射至拋光表面。 The first polishing unit 131A includes: a polishing table 132A for holding the polishing pad; a top ring 133A configured to hold the substrate and press the substrate against the polishing surface of the polishing pad on the polishing table 132A to polish the substrate; a liquid supply nozzle 134A for supplying a polishing liquid (for example, a slurry) or a conditioning liquid (for example, pure water) to a polishing surface of the polishing pad; a dresser 135A for trimming the polishing pad; and an atomizer 136A has a nozzle for spraying a mixture of a liquid (eg, pure water) in an atomized state and a gas (eg, nitrogen) onto the polishing surface.

同樣地，第二拋光單元131B包含拋光台132B、頂環133B、拋光液供應噴嘴134B、修整器135B、和噴霧器136B。 第三拋光單元131C包含拋光台132C、頂環133C、拋光液供應噴嘴134C、修整器135C、和噴霧器136C。第四拋光單元131D包含拋光台132D、頂環133D、拋光液供應噴嘴134D、修整器135D、和噴霧器136D。 Likewise, the second polishing unit 131B includes a polishing table 132B, a top ring 133B, a polishing liquid supply nozzle 134B, a trimmer 135B, and a sprayer 136B. The third polishing unit 131C includes a polishing table 132C, a top ring 133C, a polishing liquid supply nozzle 134C, a trimmer 135C, and a sprayer 136C. The fourth polishing unit 131D includes a polishing table 132D, a top ring 133D, a polishing liquid supply nozzle 134D, a trimmer 135D, and a sprayer 136D.

第一線性搬運器150設於第一拋光部130a中。此第一線性搬運器150係配置成用以於位於沿著拋光裝置之縱向之四個移載位置之間移載基板(下文中，此四個移載位置從裝載及卸載部102依序稱為第一移載位置TP1、第二移載位置TP2、第三移載位置TP3、和第四移載位置TP4)。用來反轉自第一移載機器人122所移載而來之基板之反轉機151係配置在第一線性搬運器150之第一移載位置TP1之上方。垂直可移動之舉升器152係配置在第一移載位置TP1之下方。垂直可移動之推動器153係配置在第二移載位置TP2之下方，垂直可移動之推動器154係配置在第三移載位置TP3之下方，以及垂直可移動之推動器155配置在第四移載位置TP4之下方。 The first linear carrier 150 is disposed in the first polishing portion 130a. The first linear carrier 150 is configured to transfer the substrate between four transfer positions along the longitudinal direction of the polishing apparatus (hereinafter, the four transfer positions are sequentially loaded from the loading and unloading unit 102) It is referred to as a first transfer position TP1, a second transfer position TP2, a third transfer position TP3, and a fourth transfer position TP4). The reversing machine 151 for reversing the substrate transferred from the first transfer robot 122 is disposed above the first transfer position TP1 of the first linear carrier 150. The vertically movable lifter 152 is disposed below the first transfer position TP1. The vertically movable pusher 153 is disposed below the second transfer position TP2, the vertically movable pusher 154 is disposed below the third transfer position TP3, and the vertically movable pusher 155 is disposed in the fourth The transfer position is below the TP4.

於第二拋光部130b，第二線性搬運器160設成緊鄰著第一線性搬運器150。此第二線性搬運器160係配置成於位於沿著拋光裝置之縱向之三個移載位置之間移載基板(下文中，此三個移載位置係從裝載及卸載部102依序將稱為第五移載位置TP5、第六移載位置TP6、和第七移載位置TP7)。垂直可移動之舉升器166係配置在第五移載位置TP5之下方，垂直可移動之推動器167係配置在第六移載位置TP6之下方，而垂直可移動之推動器168係配置在第 七移載位置TP7之下方。 In the second polishing portion 130b, the second linear carrier 160 is disposed adjacent to the first linear carrier 150. The second linear carrier 160 is configured to transfer the substrate between three transfer positions along the longitudinal direction of the polishing apparatus (hereinafter, the three transfer positions are sequentially referred to from the loading and unloading unit 102) It is a fifth transfer position TP5, a sixth transfer position TP6, and a seventh transfer position TP7). The vertically movable lifter 166 is disposed below the fifth transfer position TP5, the vertically movable pusher 167 is disposed below the sixth transfer position TP6, and the vertically movable pusher 168 is disposed in the First Seven transfer positions below TP7.

如第26圖中所示，第一線性搬運器150具有4個移載工作台：第一工作台、第二工作台、第三工作台、和第四工作台。這些移載工作台具有雙線結構，包含上線和下線。 詳言之，第一移載工作台、第二移載工作台、和第三移載工作台配置在下線，而第四移載工作台配置在上線。 As shown in Fig. 26, the first linear carrier 150 has four transfer stages: a first stage, a second stage, a third stage, and a fourth stage. These transfer stations have a two-wire structure with upper and lower lines. In detail, the first transfer workbench, the second transfer workbench, and the third transfer workbench are disposed on the lower line, and the fourth transfer workbench is disposed on the upper line.

下方之移載工作台和上方之移載工作台能夠自由移動而不會彼此干擾，因為他們設在不同的高度。第一移載工作台係於第一移載位置TP1和第二移載位置(亦即，基板接收/傳送位置)TP2之間移載基板。第二移載工作台係於第二移載位置TP2和第三移載位置(亦即，基板接收/傳送位置)TP3之間移載基板。第三移載工作台係於第三移載位置TP3和第四移載位置TP4之間移載基板。第四移載工作台係於第一移載位置TP1和第四移載位置TP4之間移載基板。 The transfer table below and the transfer table above can move freely without interfering with each other because they are set at different heights. The first transfer stage transfers the substrate between the first transfer position TP1 and the second transfer position (ie, substrate receiving/transfer position) TP2. The second transfer stage transfers the substrate between the second transfer position TP2 and the third transfer position (ie, substrate receiving/transfer position) TP3. The third transfer stage transfers the substrate between the third transfer position TP3 and the fourth transfer position TP4. The fourth transfer stage transfers the substrate between the first transfer position TP1 and the fourth transfer position TP4.

第二線性搬運器160具有與第一線性搬運器150實質上相同的結構。詳言之，第五移載工作台和第六移載工作台配置在上線，而第七移載工作台配置在下線。第五移載工作台係於第五移載位置TP5和第六移載位置(亦即，基板接收/傳送位置)TP6之間移載基板。第六移載工作台係於第六移載位置TP6和第七移載位置(亦即，基板接收/傳送位置)TP7之間移載基板。第七移載工作台係於第五移載位置TP5和第七移載位置TP7之間移載基板。 The second linear carrier 160 has substantially the same structure as the first linear carrier 150. In detail, the fifth transfer workbench and the sixth transfer workbench are disposed on the upper line, and the seventh transfer workbench is disposed on the lower line. The fifth transfer stage transfers the substrate between the fifth transfer position TP5 and the sixth transfer position (ie, substrate receiving/transfer position) TP6. The sixth transfer stage transfers the substrate between the sixth transfer position TP6 and the seventh transfer position (ie, substrate receiving/transfer position) TP7. The seventh transfer stage transfers the substrate between the fifth transfer position TP5 and the seventh transfer position TP7.

如從拋光期間係使用漿料之事實可以了解到者，拋光 部130為最骯髒之區域。因此，為了防止微粒散佈至拋光部130外面，而從個別拋光台之周圍空間排放氣體。此外，於拋光部130之內部的壓力係設定為較裝置之外部、清洗部140、和裝載及卸載部102之壓力為低，由此防止微粒之飛散。一般情況是，將排放管(圖式中未顯示)分別設於拋光台之下方，將濾清器(圖式中未顯示)設於拋光台之上方，而形成從濾清器至排放管向下流動的清潔空氣。 As can be seen from the fact that the slurry is used during polishing, polishing Part 130 is the dirtiest area. Therefore, in order to prevent the particles from being scattered outside the polishing portion 130, the gas is discharged from the space around the individual polishing table. Further, the pressure inside the polishing portion 130 is set to be lower than the pressure of the outside of the device, the cleaning portion 140, and the loading and unloading portion 102, thereby preventing scattering of particles. Generally, the discharge pipes (not shown in the drawings) are respectively disposed below the polishing table, and the filter (not shown) is disposed above the polishing table to form a filter from the filter to the discharge pipe. Clean air flowing under.

清洗部140為清洗拋光之基板之區域。清洗部140包含第二移載機器人124、用於將從該第二移載機器人124所接收之基板予以反轉之反轉機141、用來清洗經拋光之基板之四個清洗單元142至145、和用來在反轉機141和清洗單元142至145之間移載基板之移載單元146。 The cleaning unit 140 is a region for cleaning the polished substrate. The cleaning unit 140 includes a second transfer robot 124, a reversing machine 141 for reversing the substrate received from the second transfer robot 124, and four cleaning units 142 to 145 for cleaning the polished substrate. And a transfer unit 146 for transferring the substrate between the reversing machine 141 and the cleaning units 142 to 145.

第二移載機器人124、反轉機141、和清洗單元142至145係依序沿著拋光裝置之縱向配置。具有清潔空氣濾清器之濾清器風扇單元(圖式中未顯示)係設在清洗單元142至145之上方。此濾清器風扇單元組構成從空氣去除微粒以產生清潔空氣，並恆常地形成向下流動之清潔空氣。於清洗部140之壓力係保持成較拋光部130之壓力為高，而防止於拋光部130之微粒流進清洗部140中。 The second transfer robot 124, the reversing machine 141, and the cleaning units 142 to 145 are sequentially disposed along the longitudinal direction of the polishing apparatus. A filter fan unit (not shown) having a clean air filter is disposed above the cleaning units 142 to 145. This filter fan unit group constitutes the removal of particulates from the air to produce clean air and constantly forms a clean air that flows downward. The pressure in the cleaning unit 140 is maintained at a higher pressure than the polishing portion 130, and the particles in the polishing portion 130 are prevented from flowing into the cleaning portion 140.

移載單元146具有複數個臂，其係構成用來固持基板，而使得複數個基板能夠藉由該等臂而在反轉機141與清洗單元142至145之間彼此一起地被水平移動。清洗單元142和清洗單元143可以包括：例如具有上部和下部輥式海棉(roll-shaped sponge)之輥型清洗單元，該輥式海棉係 旋轉並壓靠基板之前表面和後表面，由此清潔基板之前表面和後表面。清洗單元144可以包括：例如具有半球海棉之筆型清洗單元，該半球海棉係旋轉並壓靠基板以清洗基板。清洗單元145包括依照任何其中一個實施例之上述基板清洗裝置。於清洗單元142至144中，除了上述之輥型清洗單元或筆型清洗單元，可另外設置用以施加超音波於清洗液以清洗基板的超高音波型清洗單元(megasonic type cleaning unit)。 The transfer unit 146 has a plurality of arms configured to hold the substrate such that a plurality of substrates can be horizontally moved together with each other between the reversing machine 141 and the cleaning units 142 to 145 by the arms. The cleaning unit 142 and the cleaning unit 143 may include, for example, a roll type cleaning unit having upper and lower roll-shaped sponges, the roll type sponge system The front and back surfaces of the substrate are rotated and pressed, thereby cleaning the front and back surfaces of the substrate. The cleaning unit 144 may include, for example, a pen-type cleaning unit having a hemispherical sponge that rotates and presses against the substrate to clean the substrate. The cleaning unit 145 includes the above-described substrate cleaning apparatus in accordance with any one of the embodiments. In the cleaning units 142 to 144, in addition to the above-described roll type cleaning unit or pen type cleaning unit, a megasonic type cleaning unit for applying ultrasonic waves to the cleaning liquid to clean the substrate may be additionally provided.

開閉器(shutter)110係裝置於反轉機151與第一移載機器人122之間。當移載基板時，將開閉器110打開，而將基板傳送於第一移載機器人122與反轉機151之間。開閉器111、112、113、和114亦分別設於反轉機141與第二移載機器人124之間、反轉機141與清洗單元142之間、第一拋光部130a與第二移載機器人124之間、和第二拋光部130b與第二移載機器人124之間。當移載基板時，將這些開閉器111、112、113、和114打開。 A shutter 110 is installed between the reversing machine 151 and the first transfer robot 122. When the substrate is transferred, the shutter 110 is opened, and the substrate is transferred between the first transfer robot 122 and the reversing machine 151. The shutters 111, 112, 113, and 114 are also disposed between the reversing machine 141 and the second transfer robot 124, between the reversing machine 141 and the cleaning unit 142, and the first polishing unit 130a and the second transfer robot, respectively. Between 124, and between the second polishing portion 130b and the second transfer robot 124. These shutters 111, 112, 113, and 114 are opened when the substrate is transferred.

拋光墊(未顯示)安裝於拋光台132A上。拋光台132A耦接至配置於其下方之馬達(未顯示)，並可以其自己的軸為中心而旋轉。如第26圖中所示，頂環133A耦接至頂環軸137A，該頂環軸137A耦接至馬達和舉升缸(未顯示)。 因此頂環133A能夠垂直地移動並以頂環軸137A為中心旋轉。待拋光之基板藉由真空吸力等方式而被吸引並固持於頂環133A之下表面。拋光墊之上表面係構成用來與基板W滑動接觸之拋光表面。 A polishing pad (not shown) is mounted on the polishing table 132A. The polishing table 132A is coupled to a motor (not shown) disposed therebelow and is rotatable about its own axis. As shown in Fig. 26, the top ring 133A is coupled to a top ring shaft 137A that is coupled to a motor and a lift cylinder (not shown). Therefore, the top ring 133A can be vertically moved and rotated about the top ring shaft 137A. The substrate to be polished is attracted and held by the vacuum suction or the like on the lower surface of the top ring 133A. The upper surface of the polishing pad constitutes a polishing surface for sliding contact with the substrate W.

被固持於頂環133A之下表面上之基板係被旋轉且藉由頂環133A壓抵在旋轉中之拋光台132A上之拋光墊。將拋光液從拋光液供應噴嘴134A供應至拋光墊之拋光表面(上表面)。於基板W與拋光表面之間存在有拋光液之情形中拋光基板。拋光台132A和頂環133A係構成在基板W與拋光表面之間提供相對運動的機構。第二拋光單元131B、第三拋光單元131C、和第四拋光單元131D具有與第一拋光單元131A相同的結構，而因此省略其詳細說明。 The substrate held on the lower surface of the top ring 133A is rotated and pressed against the polishing pad on the rotating polishing table 132A by the top ring 133A. The polishing liquid is supplied from the polishing liquid supply nozzle 134A to the polishing surface (upper surface) of the polishing pad. The substrate is polished in the presence of a polishing liquid between the substrate W and the polishing surface. The polishing table 132A and the top ring 133A constitute a mechanism for providing relative motion between the substrate W and the polishing surface. The second polishing unit 131B, the third polishing unit 131C, and the fourth polishing unit 131D have the same structure as the first polishing unit 131A, and thus detailed description thereof will be omitted.

具有上述結構之拋光裝置能夠執行：將單一基板以四個拋光單元連續地拋光之序列式處理、和將二個基板同時拋光之並行式處理。 The polishing apparatus having the above structure is capable of performing a sequential processing in which a single substrate is continuously polished in four polishing units, and a parallel processing in which two substrates are simultaneously polished.

當執行序列式處裡時，基板以下列路線被移送：前裝載單元120之晶圓匣盒→第一移載機器人122→反轉機151→舉升器152→第一線性搬運器150之第一移載工作台→推動器153→頂環133A→拋光台132A→推動器153→第一線性搬運器150之第二移載工作台→推動器154→頂環133B→拋光台132B→推動器154→第一線性搬運器150之第三移載工作台→舉升器155→第二移載機器人124→舉升器166→第二線性搬運器160之第五移載工作台→推動器167→頂環133C→拋光台132C→推動器167→第二線性搬運器160之第六移載工作台→推動器168→頂環133D→拋光台132D→推動器168→第二線性搬運器160之第七移載工作台→舉升器166→第二移載機器人124→反轉機141→移載單元146→清洗單元142→移載單元146→清洗單元 143→移載單元146→清洗單元144→移載單元146→清洗單元145→第一移載機器人122→前裝載單元120之晶圓匣盒。 When the sequence is executed, the substrate is transferred in the following route: the wafer cassette of the front loading unit 120 → the first transfer robot 122 → the reversing machine 151 → the lifter 152 → the first linear carrier 150 The first transfer work station→the pusher 153→the top ring 133A→the polishing table 132A→the pusher 153→the second transfer work station of the first linear carrier 150→the pusher 154→the top ring 133B→the polishing table 132B→ The pusher 154 → the third transfer station of the first linear carrier 150 → the lifter 155 → the second transfer robot 124 → the lifter 166 → the fifth transfer workbench of the second linear carrier 160 → Pusher 167 → top ring 133C → polishing table 132C → pusher 167 → sixth transfer station of second linear carrier 160 → pusher 168 → top ring 133D → polishing table 132D → pusher 168 → second linear handling The seventh transfer work station of the device 160 → the lifter 166 → the second transfer robot 124 → the reverse machine 141 → the transfer unit 146 → the cleaning unit 142 → the transfer unit 146 → the cleaning unit 143→Transfer unit 146→cleaning unit 144→transfer unit 146→cleaning unit 145→first transfer robot 122→wafer cassette of front loading unit 120.

當執行並行式處裡時，基板以下列路線被移送：前裝載單元120之晶圓匣盒→第一移載機器人122→反轉機151→舉升器152→第一線性搬運器150之第一移載工作台→推動器153→頂環133A→拋光台132A→推動器153→第一線性搬運器150之第二移載工作台→推動器154→頂環133B→拋光台132B→推動器154→第一線性搬運器150之第三移載工作台→舉升器155→第二移載機器人124→反轉機141→移載單元146→清洗單元142→移載單元146→清洗單元143→移載單元146→清洗單元144→移載單元146→清洗單元145→第一移載機器人122→前裝載單元120之晶圓匣盒。 When the parallel type is executed, the substrate is transferred in the following route: the wafer cassette of the front loading unit 120 → the first transfer robot 122 → the reversing machine 151 → the lifter 152 → the first linear carrier 150 The first transfer work station→the pusher 153→the top ring 133A→the polishing table 132A→the pusher 153→the second transfer work station of the first linear carrier 150→the pusher 154→the top ring 133B→the polishing table 132B→ The pusher 154 → the third transfer station of the first linear carrier 150 → the lifter 155 → the second transfer robot 124 → the reverser 141 → the transfer unit 146 → the cleaning unit 142 → the transfer unit 146 → The cleaning unit 143 → the transfer unit 146 → the cleaning unit 144 → the transfer unit 146 → the cleaning unit 145 → the first transfer robot 122 → the wafer cassette of the front loading unit 120.

另一個基板以下列之路線被移送：前裝載單元120之晶圓匣盒→第一移載機器人122→反轉機151→舉升器152→第一線性搬運器150之第四移載工作台→舉升器155→第二移載機器人124→舉升器166→第二線性搬運器160之第五移載工作台→推動器167→頂環133C→拋光台132C→推動器167→第二線性搬運器160之第六移載工作台→推動器168→頂環133D→拋光台132D→推動器168→第二線性搬運器160之第七移載工作台→舉升器166→第二移載機器人124→反轉機141→移載單元146→清洗單元142→移載單元146→清洗單元143→移載單元146→清洗單元 144→移載單元146→清洗單元145→第一移載機器人122→前裝載單元120之晶圓匣盒。 The other substrate is transferred in the following route: the wafer cassette of the front loading unit 120 → the first transfer robot 122 → the reversing machine 151 → the lifter 152 → the fourth transfer operation of the first linear carrier 150 Stage→lifter 155→second transfer robot 124→lifter 166→the fifth transfer station of the second linear carrier 160→the pusher 167→the top ring 133C→the polishing table 132C→the pusher 167→the first The sixth transfer table of the linear conveyor 160 → the pusher 168 → the top ring 133D → the polishing table 132D → the pusher 168 → the seventh transfer station of the second linear carrier 160 → the lifter 166 → the second Transfer robot 124 → reversing machine 141 → transfer unit 146 → cleaning unit 142 → transfer unit 146 → cleaning unit 143 → transfer unit 146 → cleaning unit 144→ Transfer unit 146→ Wash unit 145→ First transfer robot 122→ Wafer cassette of front loading unit 120.

以下將說明具備有依照第一至第六實施例之其中任一實施例之基板洗淨裝置之另一種拋光裝置。第27圖為具備有依照本發明之第一至第六實施例之其中任一實施例之基板洗淨裝置之另一拋光裝置之平面圖。 Another polishing apparatus provided with the substrate cleaning apparatus according to any of the first to sixth embodiments will be described below. Figure 27 is a plan view showing another polishing apparatus having a substrate cleaning apparatus according to any one of the first to sixth embodiments of the present invention.

如第27圖中所示，拋光裝置包含裝載及卸載部201，用於容置複數個晶圓匣盒204，於該匣盒204中儲存有許多基板。具有二個手之移載機器人202係安裝於移動機構200上，以便存取於裝載及卸載部201中之晶圓匣盒204。 移動機構200使用線性馬達機構，其允許移載機器人202以高速穩定地載送大直徑和重的基板。 As shown in Fig. 27, the polishing apparatus includes a loading and unloading portion 201 for accommodating a plurality of wafer cassettes 204 in which a plurality of substrates are stored. The transfer robot 202 having two hands is mounted on the moving mechanism 200 to access the wafer cassette 204 in the loading and unloading unit 201. The moving mechanism 200 uses a linear motor mechanism that allows the transfer robot 202 to stably carry large diameter and heavy substrates at high speed.

拋光裝置亦包含二個清洗單元212，其係配置在晶圓匣盒204的相對於移載機器人202之移動機構200之相反側。各清洗單元212為依照本發明之第一至第六實施例之其中任一實施例之基板洗淨裝置。清洗單元212配置在能夠由移載機器人202之手伸達之個別位置。具有四個基板放置台之晶圓站206配置在二個清洗單元212之間。此晶圓站206係位於能夠由移載機器人202之手伸達之位置。 The polishing apparatus also includes two cleaning units 212 disposed on opposite sides of the wafer cassette 204 relative to the moving mechanism 200 of the transfer robot 202. Each cleaning unit 212 is a substrate cleaning apparatus according to any one of the first to sixth embodiments of the present invention. The cleaning unit 212 is disposed at an individual position that can be reached by the hand of the transfer robot 202. A wafer station 206 having four substrate placement stages is disposed between the two cleaning units 212. This wafer station 206 is located at a position that can be reached by the hand of the transfer robot 202.

二個移載機器人208配置在其手能夠伸達各個清洗單元212和晶圓站206的個別位置。二個清洗單元214分別配置成鄰靠清洗單元212。這些清洗單元214係位於使得移載機器人208之手能夠分別伸達清洗單元214之位置。 旋轉搬運器210配置在能夠由移載機器人208之手伸達之 位置。二個拋光單元250配置在該拋光單元250能夠移送基板至該旋轉搬運器210和從該旋轉搬運器210移送基板之位置。可以設置單一移載機器人208以取代二個移載機器人208。 The two transfer robots 208 are disposed at individual locations where their hands can reach the various cleaning units 212 and wafer stations 206. The two cleaning units 214 are respectively disposed adjacent to the cleaning unit 212. These cleaning units 214 are located at positions where the hands of the transfer robot 208 can reach the cleaning unit 214, respectively. The rotary carrier 210 is disposed to be reachable by the hand of the transfer robot 208 position. The two polishing units 250 are disposed at a position where the polishing unit 250 can transfer the substrate to the rotary carrier 210 and transfer the substrate from the rotary carrier 210. A single transfer robot 208 can be provided in place of the two transfer robots 208.

該拋光裝置具有線上厚度監視器(In-line Thickness Monitor；ITM)224作為用來測量已經被洗淨和乾燥之基板之表面狀態(譬如膜厚度)之測量單元。此ITM 224可設成在拋光基板之前或之後執行測量。如第27圖中所示，ITM 224定位於移動機構200之延伸部，或者換言之，於移動機構200之端部。於移載機器人202將經拋光之基板移送回到其中一個晶圓匣盒204中之前、或者於移載機器人202從其中一個晶圓匣盒204移出待拋光之基板之後，ITM 224根據使用光學機構施加於基板並於基板反射之光學訊號而測量基板(例如，半導體晶圓)之表面上的銅膜或阻障膜之拋光狀態。 The polishing apparatus has an In-line Thickness Monitor (ITM) 224 as a measuring unit for measuring the surface state (e.g., film thickness) of the substrate which has been washed and dried. This ITM 224 can be configured to perform measurements before or after polishing the substrate. As shown in FIG. 27, the ITM 224 is positioned at an extension of the mobile mechanism 200, or in other words, at the end of the mobile mechanism 200. The ITM 224 is based on the use of an optical mechanism before the transfer robot 202 transfers the polished substrate back to one of the wafer cassettes 204, or after the transfer robot 202 removes the substrate to be polished from one of the wafer cassettes 204. The polished state of the copper film or the barrier film on the surface of the substrate (eg, a semiconductor wafer) is measured by an optical signal applied to the substrate and reflected on the substrate.

各拋光單元250包含拋光台230、頂環231、用來供應拋光液至拋光台230上拋光墊(未顯示)之拋光液供應噴嘴232、用來修整拋光墊之修整器218、和儲存水用來洗淨該修整器218之水槽222。 Each polishing unit 250 includes a polishing table 230, a top ring 231, a polishing liquid supply nozzle 232 for supplying polishing liquid to a polishing pad (not shown) on the polishing table 230, a dresser 218 for conditioning the polishing pad, and a storage water The sink 222 of the dresser 218 is washed.

以下將說明第27圖中所示拋光裝置之操作。 The operation of the polishing apparatus shown in Fig. 27 will be explained below.

儲存各具有形成於其表面上之導電膜(譬如銅膜)之許多基板之晶圓匣盒204係被安置於裝載及卸載部201中。移載機器人202從其中一個晶圓匣盒204中移出基板，並將該經移出之基板放置在晶圓站206。其中一個移載機器 人208從晶圓站206接收基板，若需要的話將其上下反轉，並將該基板移送至旋轉搬運器210。該旋轉搬運器210於水平面旋轉，而於該旋轉搬運器210上之基板係由其中一個拋光單元250之頂環231所固持。 A wafer cassette 204 storing a plurality of substrates each having a conductive film (such as a copper film) formed on the surface thereof is disposed in the loading and unloading portion 201. The transfer robot 202 removes the substrate from one of the wafer cassettes 204 and places the removed substrate at the wafer station 206. One of the transfer machines The person 208 receives the substrate from the wafer station 206, reverses it upside down if necessary, and transfers the substrate to the rotary carrier 210. The rotary carrier 210 rotates in a horizontal plane, and the substrate on the rotary carrier 210 is held by the top ring 231 of one of the polishing units 250.

由頂環231所固持之基板被移至在拋光台230上方之拋光位置。當令頂環231和拋光台230旋轉之同時，將基板降下並壓靠拋光墊之拋光表面。在將拋光液從拋光液供應噴嘴232供應至拋光表面時，拋光該基板。 The substrate held by the top ring 231 is moved to a polishing position above the polishing table 230. While the top ring 231 and the polishing table 230 are rotated, the substrate is lowered and pressed against the polishing surface of the polishing pad. When the polishing liquid is supplied from the polishing liquid supply nozzle 232 to the polishing surface, the substrate is polished.

經拋光之基板係經由旋轉搬運器210移送至移載機器人208，若需要的話該移載機器人208將基板上下反轉，並將該基板傳送至其中一個清洗單元214。於已執行了拋光製程之拋光單元250中，拋光墊之拋光表面由修整器218所修整，以便準備好用來拋光下一個基板。 The polished substrate is transferred to the transfer robot 208 via the rotary carrier 210, and if necessary, the transfer robot 208 reverses the substrate upside down and transfers the substrate to one of the cleaning units 214. In the polishing unit 250 that has performed the polishing process, the polishing surface of the polishing pad is trimmed by the trimmer 218 so as to be ready for polishing the next substrate.

清洗單元214清除並沖洗基板之表面，然後乾燥該基板。然後經乾燥之基板藉由移載機器人208被移送並放置在晶圓站206。移載機器人202從該晶圓站206移去該經乾燥之基板，並將該基板移送至其中一個清洗單元212，而於該清洗單元212清洗和乾燥該基板。已清洗和乾燥之基板由移載機器人202送返至原來的晶圓匣盒204。 The cleaning unit 214 removes and rinses the surface of the substrate and then dries the substrate. The dried substrate is then transferred by transfer robot 208 and placed at wafer station 206. The transfer robot 202 removes the dried substrate from the wafer station 206 and transfers the substrate to one of the cleaning units 212, where the substrate is cleaned and dried. The cleaned and dried substrate is returned by the transfer robot 202 to the original wafer cassette 204.

因為拋光裝置具有二組之拋光單元250、清洗單元212、和清洗單元214，因此拋光裝置能夠同時對二個基板執行一系列之製程，包含拋光、清洗、和乾燥。單一基板可由二個拋光單元250來拋光。 Since the polishing apparatus has two sets of the polishing unit 250, the cleaning unit 212, and the cleaning unit 214, the polishing apparatus can perform a series of processes on both substrates simultaneously, including polishing, cleaning, and drying. A single substrate can be polished by two polishing units 250.

雖然已顯示和詳細說明了本發明之某些較佳實施例， 但是應該了解到在由申請專利範圍、說明書、和圖式所界定之技術觀念範圍內可作各種之改變和修釋。 Although certain preferred embodiments of the invention have been shown and described in detail, However, it should be understood that various changes and modifications can be made within the scope of the technical concept defined by the scope of the patent application, the specification, and the drawings.

1‧‧‧基板固持機構 1‧‧‧ substrate holding mechanism

2‧‧‧馬達 2‧‧‧Motor

3‧‧‧旋轉蓋 3‧‧‧Rotating cover

4‧‧‧前噴嘴 4‧‧‧ front nozzle

10‧‧‧夾爪 10‧‧‧claw

11A‧‧‧第一工作台 11A‧‧‧First Workbench

11B‧‧‧第二工作台 11B‧‧‧Second Workbench

12A‧‧‧第一支撐軸 12A‧‧‧First support shaft

12B‧‧‧第二支撐軸 12B‧‧‧Second support shaft

15‧‧‧線性運動導引機構 15‧‧‧Linear motion guidance mechanism

17‧‧‧後噴嘴 17‧‧‧After nozzle

18‧‧‧氣體噴嘴 18‧‧‧ gas nozzle

20、21‧‧‧噴嘴 20, 21‧‧‧ nozzle

23‧‧‧制動器 23‧‧‧ brake

24‧‧‧耦接機構 24‧‧‧ coupling mechanism

25‧‧‧排放孔 25‧‧‧Drain hole

26‧‧‧輔助排放孔 26‧‧‧Auxiliary discharge holes

28‧‧‧裙 28‧‧‧ skirt

30‧‧‧液體出口通道 30‧‧‧Liquid outlet channel

31‧‧‧氣體出口通道 31‧‧‧ gas exit channel

32‧‧‧吸引源 32‧‧‧Attraction source

35‧‧‧固定板 35‧‧‧ fixed plate

W‧‧‧基板 W‧‧‧Substrate

Claims (6)

一種基板洗淨裝置，包括：基板固持機構，具有圓形工作台且組構成用以水平地固持基板；旋轉機構，組構成使藉由該基板固持機構所固持之基板旋轉；液體供應噴嘴，用來供應清洗液至該基板；旋轉蓋，設在該基板之周圍，並能以與該基板相同的速度旋轉；排放孔，形成於該工作台內，且具有位於該旋轉蓋下端的上開口以及位於該工作台之下表面之下開口；以及環形液體出口通道以及環形氣體出口通道，設置於該排放孔下方；其中，該旋轉蓋係具有環繞該基板之內周表面，其中，該內周表面係從其下端至上端徑向朝內地傾斜，以及其中，該液體出口通道係位於該氣體出口通道之徑向外側。 A substrate cleaning device includes: a substrate holding mechanism having a circular working table and configured to horizontally hold the substrate; a rotating mechanism configured to rotate the substrate held by the substrate holding mechanism; and a liquid supply nozzle Providing a cleaning liquid to the substrate; a rotating cover disposed around the substrate and rotatable at the same speed as the substrate; a discharge hole formed in the table and having an upper opening at a lower end of the rotating cover and An opening below the lower surface of the table; and an annular liquid outlet passage and an annular gas outlet passage disposed below the discharge hole; wherein the rotating cover has an inner circumferential surface surrounding the substrate, wherein the inner circumferential surface The body is inclined radially inward from its lower end to the upper end, and wherein the liquid outlet passage is located radially outward of the gas outlet passage. 如申請專利範圍第1項之基板洗淨裝置，復包括：管狀裙，從該工作台之周圍向下延伸。 The substrate cleaning device of claim 1, further comprising: a tubular skirt extending downward from the periphery of the table. 如申請專利範圍第1項之基板洗淨裝置，復包括：圓筒狀屏蔽蓋，成形為圍繞該工作台以及支撐該工作台之支撐軸。 The substrate cleaning device of claim 1, further comprising: a cylindrical shielding cover formed to surround the table and a support shaft supporting the table. 如申請專利範圍第1項之基板洗淨裝置，復包括：輔助旋轉蓋，固定於該旋轉蓋之該內周表面且徑向朝內朝向其上端傾斜。 The substrate cleaning device of claim 1, further comprising: an auxiliary rotating cover fixed to the inner peripheral surface of the rotating cover and inclined radially inward toward the upper end thereof. 如申請專利範圍第1項之基板洗淨裝置，復包括：固定蓋，成形為覆蓋該旋轉蓋之整個外周表面；以及複數個鰭片或螺旋溝槽，形成於該旋轉蓋之該外周表面。 The substrate cleaning apparatus of claim 1, further comprising: a fixing cover formed to cover the entire outer peripheral surface of the rotating cover; and a plurality of fins or spiral grooves formed on the outer circumferential surface of the rotating cover. 如申請專利範圍第1項之基板洗淨裝置，其中該內周表面相對於水平面之角度係從該內周表面之上端處之最小值漸漸增加至下端處之最大值。 The substrate cleaning apparatus of claim 1, wherein the angle of the inner peripheral surface with respect to the horizontal plane gradually increases from a minimum value at an upper end of the inner peripheral surface to a maximum value at a lower end.