TWI687971B - Substrate processing device and substrate processing method - Google Patents

Substrate processing device and substrate processing method Download PDF

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TWI687971B
TWI687971B TW106109910A TW106109910A TWI687971B TW I687971 B TWI687971 B TW I687971B TW 106109910 A TW106109910 A TW 106109910A TW 106109910 A TW106109910 A TW 106109910A TW I687971 B TWI687971 B TW I687971B
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substrate
shielding plate
processing liquid
processing
nozzle
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TW201802870A (en
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小林信雄
笹平幸之介
山崎克弘
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芝浦機械電子裝置股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/041—Cleaning travelling work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

與實施形態相關之基板處理裝置是令基板旋轉而進行清洗處理之基板處理裝置，包含：處理室；軸轉保持機構，設在前述處理室，將基板保持；處理液供給噴嘴，朝前述基板供給處理液；遮蔽板，與前述軸轉保持機構所保持之前述基板對向配置，移動於相對前述基板接近離開方向；遮蔽板旋轉機構，令前述遮蔽板旋轉；及控制裝置，當朝前述基板供給處理液時，在未令前述遮蔽板移動之下，令前述遮蔽板旋轉。可防止基板之處理時之基板汙染。The substrate processing apparatus related to the embodiment is a substrate processing apparatus that rotates a substrate to perform a cleaning process, and includes: a processing chamber; a pivot holding mechanism provided in the processing chamber to hold the substrate; a processing liquid supply nozzle to supply the substrate Processing liquid; shielding plate, arranged opposite to the substrate held by the pivoting holding mechanism, moving closer to the direction away from the substrate; shielding plate rotating mechanism, rotating the shielding plate; and control device, when supplied to the substrate When processing the liquid, the shielding plate is rotated without moving the shielding plate. It can prevent substrate contamination during substrate processing.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本發明之實施形態是涉及基板處理裝置及基板處理方法。An embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method.

基板處理裝置舉例來說是在半導體等之製造步驟，進行在晶圓或液晶面板等之基板形成電路圖案之成膜程序或光刻程序。在該等程序中，在主要使用處理液之濕程序是使用枚葉式之基板處理裝置而對基板進行化學處理、清洗處理、乾燥處理等(例如，參考日本特許公開公報2000-133625號)。枚葉式之基板處理裝置是把持基板之外周面，以與基板之表面正交之軸作為旋轉軸而令基板旋轉，將處理液(例如蝕刻液、清洗液、純水)供給至該旋轉之基板之表面。For example, the substrate processing apparatus performs a film forming process or a photolithography process for forming a circuit pattern on a substrate such as a wafer or a liquid crystal panel in a manufacturing step of a semiconductor or the like. Among these procedures, a wet procedure that mainly uses a processing liquid is to use a substrate processing apparatus of a blade type to perform chemical treatment, cleaning treatment, drying treatment, etc. on the substrate (for example, refer to Japanese Patent Laid-Open Publication No. 2000-133625). The substrate processing device of the blade type holds the outer peripheral surface of the substrate, rotates the substrate with an axis orthogonal to the surface of the substrate as a rotation axis, and supplies a processing solution (such as etching solution, cleaning solution, pure water) to the rotating The surface of the substrate.

基板處理裝置是在將處理液供給至基板之表面後，伴隨著基板之旋轉而將氣體供給至基板之表面並進行乾燥處理。該乾燥處理是令與基板對向配置且大小足以覆蓋整面基板之遮蔽板朝基板之表面靠近，將氣體朝在基板與遮蔽板之間形成之空間供給。The substrate processing apparatus supplies the processing liquid to the surface of the substrate, and then supplies the gas to the surface of the substrate with the rotation of the substrate and performs the drying process. In this drying process, a shielding plate arranged opposite to the substrate and large enough to cover the entire surface of the substrate is brought close to the surface of the substrate, and gas is supplied to the space formed between the substrate and the shielding plate.

如此之裝置是從在基板之表面供給處理液而進行處理時，就令遮蔽板定位在接近基板之位置。In such a device, when the processing liquid is supplied from the surface of the substrate for processing, the shielding plate is positioned close to the substrate.

話說，供給至基板之表面之處理液可能在基板之表面上發生液體飛濺之情形。若發生此現象，則飛濺之處理液會附著在處於接近基板狀態之遮蔽板之與基板對向之面。若將該附著有處理液之遮蔽板使用在乾燥處理，則附著在遮蔽板之處理液會朝基板之表面落下，而成為發生水痕之原因。前面提到之專利文獻並未認識到此課題。In other words, the treatment liquid supplied to the surface of the substrate may splash liquid on the surface of the substrate. If this phenomenon occurs, the splattered processing liquid will adhere to the surface of the shielding plate that is close to the substrate and facing the substrate. If the shielding plate to which the processing liquid is attached is used in a drying process, the processing liquid adhering to the shielding plate may fall toward the surface of the substrate, which may cause water marks. The aforementioned patent literature does not recognize this subject.

本發明之目的是可良好地對使用到處理液之基板進行處理。The object of the present invention is to process substrates using a processing liquid satisfactorily.

與實施形態相關之基板處理裝置是令基板旋轉而進行清洗處理之基板處理裝置，包含：軸轉保持機構，將基板保持；處理液供給噴嘴，朝前述基板供給處理液；遮蔽板，與前述軸轉保持機構所保持之前述基板對向配置，移動於相對前述基板接近離開方向；遮蔽板旋轉機構，令前述遮蔽板旋轉；及控制裝置，在未供給前述處理液時，令前述遮蔽板定位到待機位置，由前述處理液供給噴嘴供給前述處理液中是控制前述遮蔽板旋轉機構在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉。The substrate processing apparatus related to the embodiment is a substrate processing apparatus that rotates a substrate and performs a cleaning process, and includes: a pivoting holding mechanism to hold the substrate; a processing liquid supply nozzle to supply the processing liquid to the substrate; a shielding plate and the shaft The substrate held by the rotation holding mechanism is opposed to each other and moves in a direction away from the substrate; the shield plate rotation mechanism rotates the shield plate; and the control device positions the shield plate to the position when the processing liquid is not supplied In the standby position, the supply of the processing liquid from the processing liquid supply nozzle is to control the shielding plate rotating mechanism to rotate the shielding plate without moving the shielding plate from the standby position.

與實施形態相關之基板處理裝置是令基板旋轉而進行清洗處理之基板處理裝置，包含：軸轉保持機構，將基板保持；處理液供給噴嘴，朝前述基板供給處理液；遮蔽板，與前述軸轉保持機構所保持之前述基板對向配置，移動於相對前述基板接近離開方向；遮蔽板旋轉機構，令前述遮蔽板旋轉；背面噴嘴頭，朝前述基板之背面分別供給前述處理液與氣體；及控制裝置；前述控制裝置是每當達到事先設定之第1設定片數，則在未供給前述處理液時，令前述遮蔽板定位到待機位置，由前述處理液供給噴嘴供給前述處理液中是控制前述遮蔽板旋轉機構在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉，每當達到事先設定之第2設定片數，則控制成在從處理室搬出前述基板後，藉由前述背面噴嘴頭而朝前述遮蔽板分別供給前述處理液與前述氣體，每當達到事先設定之第3設定片數，則控制成在從前述處理室搬出前述基板後，利用前述處理液供給噴嘴往前述遮蔽板之周緣供給前述處理液。The substrate processing apparatus related to the embodiment is a substrate processing apparatus that rotates a substrate and performs a cleaning process, and includes: a pivoting holding mechanism to hold the substrate; a processing liquid supply nozzle to supply the processing liquid to the substrate; a shielding plate and the shaft The substrate held by the rotation holding mechanism is arranged to face each other, moving in a direction away from the substrate; the shielding plate rotating mechanism rotates the shielding plate; the back nozzle head supplies the processing liquid and the gas to the back of the substrate, respectively; and Control device; the control device is to control the shielding plate to the standby position when the processing liquid is not supplied when the first set number of pieces set in advance is reached, and the processing liquid is supplied from the processing liquid supply nozzle during the supply of the processing liquid. The shielding plate rotating mechanism rotates the shielding plate without moving the shielding plate from the standby position, and whenever the second set number set in advance is reached, it is controlled so that after removing the substrate from the processing chamber, The processing liquid and the gas are respectively supplied to the shielding plate from the back nozzle head, and each time a predetermined third set number is reached, it is controlled to use the processing liquid supply nozzle after the substrate is carried out from the processing chamber The processing liquid is supplied to the periphery of the shielding plate.

與實施形態相關之基板處理方法是在令基板旋轉而進行清洗處理之基板處理步驟包含：基板保持步驟，將前述基板保持；處理液供給步驟，從處理液供給噴嘴將處理液朝前述基板供給；遮蔽板移動步驟，令與用前述基板保持步驟所保持之前述基板對向而配置之遮蔽板，移動於相對前述基板接近離開方向；及遮蔽板旋轉步驟，在未供給前述處理液時，令前述遮蔽板定位到待機位置，由前述處理液供給噴嘴供給前述處理液中是在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉。The substrate processing method related to the embodiment is that the substrate processing step of rotating the substrate to perform the cleaning process includes: a substrate holding step to hold the substrate; a processing liquid supply step to supply the processing liquid from the processing liquid supply nozzle toward the substrate; The moving step of the shielding plate moves the shielding plate disposed opposite to the substrate held by the substrate holding step in a direction away from the substrate; and the rotating step of the shielding plate, when the processing liquid is not supplied, causes the foregoing The shielding plate is positioned to the standby position, and the supply of the processing liquid from the processing liquid supply nozzle rotates the shielding plate without moving the shielding plate from the standby position.

根據本發明之實施形態，可良好地對使用到處理液之基板進行處理。According to the embodiment of the present invention, the substrate using the processing liquid can be processed favorably.

[第1實施形態] 參考圖1至圖4來說明第1實施形態。[First Embodiment] The first embodiment will be described with reference to Figs. 1 to 4.

如圖1所示，與第1實施形態相關之基板處理裝置1具有基板收納箱2、載置台3、搬運機器人4、搬運導軌5、緩衝台6、搬運機器人7、搬運導軌8、處理室9、附帶單元10。As shown in FIG. 1, the substrate processing apparatus 1 according to the first embodiment includes a substrate storage box 2, a mounting table 3, a transfer robot 4, a transfer rail 5, a buffer table 6, a transfer robot 7, a transfer rail 8, and a processing chamber 9 , Attached unit 10.

基板收納箱2是將基板W(例如半導體晶圓)收納之容器。在該基板收納箱2，基板W是以預定間隔而1片1片地積層收納。The substrate storage box 2 is a container that stores substrates W (for example, semiconductor wafers). In the substrate storage box 2, the substrates W are stacked and stored one by one at a predetermined interval.

載置台3是用於擺置基板收納箱2之台。如圖1所示，可以將複數個基板收納箱2以預定間隔而一列地擺置。The mounting table 3 is a table for placing the substrate storage box 2. As shown in FIG. 1, a plurality of substrate storage boxes 2 may be arranged in a row at predetermined intervals.

搬運機器人4是設在基板收納箱2之列之旁邊，能沿著複數個基板收納箱2排列之第1搬運方向(圖1所示之箭頭A方向)而移動。該搬運機器人4是將收納在基板收納箱2之未處理之基板W取出。然後，搬運機器人4是因應需要而朝箭頭A方向移動，停止在緩衝台6之附近，在停止處回轉而將基板W搬運至緩衝台6。另外，搬運機器人4是從緩衝台6取出已處理之基板W，因應需要而朝箭頭A方向移動，搬運至目的之基板收納箱2。附帶一提，搬運機器人4有時是採用只進行回轉而將未處理之基板W搬運至緩衝台6、或是將已處理之基板W搬運至目的之基板收納箱2之構成。關於搬運機器人，舉例來說，可以是使用具有機器臂、機器手、移動機構等之公知之機器人。The transport robot 4 is provided beside the row of substrate storage boxes 2 and can move along the first transport direction (direction of arrow A shown in FIG. 1) in which a plurality of substrate storage boxes 2 are arranged. The transport robot 4 takes out the unprocessed substrate W stored in the substrate storage box 2. Then, the transport robot 4 moves in the direction of the arrow A as necessary, stops near the buffer table 6, and rotates at the stop to transfer the substrate W to the buffer table 6. In addition, the transfer robot 4 takes out the processed substrate W from the buffer table 6, moves it in the direction of arrow A as necessary, and transfers it to the target substrate storage box 2. Incidentally, the transfer robot 4 sometimes adopts a configuration that only rotates to transfer the unprocessed substrate W to the buffer table 6 or transfers the processed substrate W to the destination substrate storage box 2. As for the transport robot, for example, a well-known robot having a robot arm, a robot hand, a moving mechanism, etc. may be used.

搬運導軌5是令搬運機器人4於箭頭A方向移動之機構。藉此，可令搬運機器人4移動，而將基板W在各基板收納箱2與緩衝台6之間搬運。該搬運導軌5舉例來說是LM導件(Linear Motion Guide)。The transport rail 5 is a mechanism that moves the transport robot 4 in the direction of arrow A. Thereby, the transfer robot 4 can be moved, and the substrate W can be transferred between each substrate storage box 2 and the buffer table 6. The transport rail 5 is, for example, an LM guide (Linear Motion Guide).

緩衝台6是設在搬運機器人4進行移動之搬運導軌5之中央附近，且與載置台3是位於相反側。該緩衝台6是用於讓基板W在搬運機器人4與搬運機器人7之間進行交換之載置台。The buffer table 6 is provided in the vicinity of the center of the transport rail 5 that the transport robot 4 moves, and is on the opposite side to the mounting table 3. The buffer table 6 is a mounting table for the substrate W to be exchanged between the transfer robot 4 and the transfer robot 7.

搬運機器人7是以能從緩衝台6朝與搬運機器人4之搬運方向(箭頭A方向)正交之第2搬運方向(圖1顯示之箭頭B方向)移動的方式而設。該搬運機器人7是將擺置在緩衝台6之基板W取出，因應需要而朝箭頭B方向移動，停止在目的之處理室9之附近，在停止處回轉而將基板W搬運至目的之處理室9。另外，搬運機器人7是從處理室9取出已處理之基板W，因應需要而朝箭頭B方向移動，停止在緩衝台6附近，在停止處回轉而將已處理之基板W往緩衝台6搬運。關於該搬運機器人7，舉例來說，可以是使用具有機器臂、機器手、移動機構等之公知之機器人。The transport robot 7 is provided so as to be movable from the buffer table 6 in the second transport direction (arrow B direction shown in FIG. 1) orthogonal to the transport direction (arrow A direction) of the transport robot 4. The transport robot 7 takes out the substrate W placed on the buffer table 6, moves it in the direction of arrow B as necessary, stops near the target processing chamber 9, and rotates at the stop to transfer the substrate W to the target processing chamber 9. In addition, the transport robot 7 takes out the processed substrate W from the processing chamber 9, moves in the direction of arrow B as necessary, stops near the buffer table 6, and rotates at the stop to transfer the processed substrate W to the buffer table 6. The transport robot 7 may be, for example, a known robot having a robot arm, robot hand, moving mechanism, or the like.

搬運導軌8是令搬運機器人7於箭頭B方向移動之機構。藉由該機構，可令搬運機器人7移動，而將基板W在各處理室9與緩衝台6之間搬運。該搬運導軌8舉例來說是LM導件(Linear Motion Guide)。The transport rail 8 is a mechanism that moves the transport robot 7 in the direction of arrow B. With this mechanism, the transfer robot 7 can be moved, and the substrate W can be transferred between each processing chamber 9 and the buffer table 6. The transport rail 8 is, for example, an LM guide (Linear Motion Guide).

處理室9是設在搬運機器人7進行移動之搬運導軌8之兩側，舉例來說，分別設有二個。在本實施形態，該處理室9是對由搬運機器人7搬運之基板W供給處理液，而對基板W進行清洗處理。另外，進行令已完成清洗處理之基板W乾燥之乾燥處理。詳細是後述。The processing chamber 9 is provided on both sides of the conveying rail 8 moved by the conveying robot 7, for example, two are provided respectively. In the present embodiment, the processing chamber 9 supplies a processing liquid to the substrate W transported by the transport robot 7 and performs cleaning processing on the substrate W. In addition, a drying process is performed to dry the substrate W that has completed the cleaning process. The details are mentioned later.

附帶單元10是設在搬運導軌8之一端、與緩衝台6位於相反側，亦即設在基板處理裝置1之端處。該附帶單元10收納有氣液供給單元10a與控制單元(控制裝置)10b。該氣液供給單元10a是朝各處理室9供給各種處理液(例如純水或APM：氨水與雙氧水之混合液、IPA：異丙醇)或氣體(例如氮氣)。控制單元10b具有將各部集中控制之微電腦、將與基板處理相關之基板處理資訊或各種程式等記憶之記憶部(皆未圖示)。該控制單元10b是基於基板處理資訊、各種程式，控制搬運機器人4、搬運機器人7、各處理室9等各部。The incidental unit 10 is provided at one end of the transport rail 8 and on the opposite side to the buffer table 6, that is, at the end of the substrate processing apparatus 1. The accessory unit 10 houses a gas-liquid supply unit 10a and a control unit (control device) 10b. The gas-liquid supply unit 10a supplies various processing liquids (for example, pure water or APM: a mixed liquid of ammonia water and hydrogen peroxide, IPA: isopropyl alcohol) or gas (for example, nitrogen gas) to each processing chamber 9. The control unit 10b has a microcomputer that centrally controls each unit, and a memory unit (not shown) that stores substrate processing information and various programs related to substrate processing. The control unit 10b controls various parts such as the transport robot 4, the transport robot 7, and the processing chambers 9 based on substrate processing information and various programs.

接著，參考圖2及圖3來說明處理室9內之構成。Next, the configuration in the processing chamber 9 will be described with reference to FIGS. 2 and 3.

如圖2所示，處理室9具有軸轉保持機構21、杯體30、背面噴嘴頭40、第1噴嘴52、第1噴嘴移動機構53、第2噴嘴54、第2噴嘴移動機構55、遮蔽機構60。軸轉保持機構21、杯體30、背面噴嘴頭40、第1噴嘴52、第1噴嘴移動機構53、第2噴嘴54、第2噴嘴移動機構55、遮蔽機構60是設在處理室9內。As shown in FIG. 2, the processing chamber 9 includes a pivot holding mechanism 21, a cup body 30, a back nozzle head 40, a first nozzle 52, a first nozzle moving mechanism 53, a second nozzle 54, a second nozzle moving mechanism 55, and a shield Agency 60. The pivot holding mechanism 21, the cup body 30, the back nozzle head 40, the first nozzle 52, the first nozzle movement mechanism 53, the second nozzle 54, the second nozzle movement mechanism 55, and the shielding mechanism 60 are provided in the processing chamber 9.

處理室9舉例來說是形成長方體形狀，具有閘門(未圖示)。該閘門是以可令處理室9之位於搬運導軌8側之壁面開閉的方式而形成。閘門是當將基板W搬入處理室9內、或從處理室9搬出時開閉。附帶一提，處理室9內是藉由降流(垂直層流)而保持著清潔。The processing chamber 9 is formed in a rectangular parallelepiped shape, for example, and has a shutter (not shown). The gate is formed in such a manner that the wall surface of the processing chamber 9 on the side of the transport rail 8 can be opened and closed. The shutter is opened and closed when the substrate W is carried into or out of the processing chamber 9. Incidentally, the processing chamber 9 is kept clean by downflow (vertical laminar flow).

軸轉保持機構21是令基板W保持水平狀態、以與基板W之被處理面垂直之中心軸R作為旋轉中心而令基板W旋轉之機構。軸轉保持機構21具有作為基部之旋轉體22。在該旋轉體22之周方向，以預定間隔、舉例來說以60度間隔而形成6個支持銷23。該支持銷23是與基板W之端面抵接，而令基板W在杯體30內保持水平狀態。軸轉保持機構21是在旋轉體22之下部具有旋轉機構24，其具有旋轉軸、馬達等。藉由該旋轉機構24，軸轉保持機構21可令基板W在保持水平狀態之下而旋轉。附帶一提，軸轉保持機構21是與控制單元10b電性連接。藉由控制單元10b，控制由軸轉保持機構21進行之基板W之保持、旋轉。The pivoting holding mechanism 21 is a mechanism that keeps the substrate W in a horizontal state and rotates the substrate W with the center axis R perpendicular to the surface to be processed of the substrate W as the rotation center. The pivot holding mechanism 21 has a rotating body 22 as a base. In the circumferential direction of the rotating body 22, six support pins 23 are formed at predetermined intervals, for example, at 60-degree intervals. The support pin 23 is in contact with the end surface of the substrate W to keep the substrate W in the cup 30 in a horizontal state. The shaft rotation holding mechanism 21 has a rotating mechanism 24 below the rotating body 22, and includes a rotating shaft, a motor, and the like. With the rotation mechanism 24, the pivot holding mechanism 21 can rotate the substrate W while keeping the substrate W in a horizontal state. Incidentally, the shaft rotation holding mechanism 21 is electrically connected to the control unit 10b. The control unit 10b controls the holding and rotation of the substrate W by the pivot holding mechanism 21.

杯體30具有3個上杯30a、30b、30c、3個下杯31a、31b、31c、底部33。該上杯30a~30c、下杯31a~31c是以從周圍將軸轉保持機構21所保持之基板W圍起來的方式而形成圓筒形狀。杯體30之上部、亦即該上杯30a~30c是以讓軸轉保持機構21所保持之基板W之表面(上面)全體露出的方式而開口，其各上部之周壁是朝徑方向之內側傾斜。The cup body 30 has three upper cups 30a, 30b, 30c, three lower cups 31a, 31b, 31c, and a bottom 33. The upper cups 30a to 30c and the lower cups 31a to 31c are formed in a cylindrical shape so as to surround the substrate W held by the pivot holding mechanism 21 from the periphery. The upper part of the cup body 30, that is, the upper cups 30a to 30c are opened in such a way that the entire surface (upper surface) of the substrate W held by the pivot holding mechanism 21 is exposed, and the peripheral walls of each upper part are radially inward tilt.

上杯30a與下杯31a是配置在軸轉保持機構21之外周。上杯30b與下杯31b是配置在上杯30a與下杯31a之外周。上杯30c與下杯31c是配置在上杯30b與下杯31b之外周。The upper cup 30a and the lower cup 31a are arranged on the outer periphery of the pivot holding mechanism 21. The upper cup 30b and the lower cup 31b are arranged on the outer periphery of the upper cup 30a and the lower cup 31a. The upper cup 30c and the lower cup 31c are arranged on the outer periphery of the upper cup 30b and the lower cup 31b.

下杯31a~31c是對底部33垂直固定而形成，可滑動自如地***在分別對應之上杯30a~30c之下部所形成之雙層構造之周壁間，成為迷路構造。上杯30a~30c是藉由未圖示之上下驅動機構而個別地上下驅動自如。另外，在底部33，於被下杯31a圍住之領域形成有排出口32a，於被下杯31a與下杯31b圍住之領域形成有排出口32b，於被下杯31b與下杯31c圍住之領域形成有排出口32c。各排出口32a~32c分別透過排出管、排液槽、氣液分離器而連接排氣泵(皆未圖示)。藉此，可通過各排出口32a~32c而將自基板W飛散之處理液分離回收。附帶一提，上下驅動機構是與控制單元10b電性連接。藉由控制單元10b，控制上杯30a~30c之上下驅動。The lower cups 31a to 31c are vertically fixed to the bottom 33, and are slidably inserted between the peripheral walls of the double-layer structure formed corresponding to the lower parts of the upper cups 30a to 30c, respectively, to become a lost structure. The upper cups 30a to 30c are individually driven up and down by an upper and lower drive mechanism (not shown). In addition, at the bottom 33, a discharge port 32a is formed in the area surrounded by the lower cup 31a, a discharge port 32b is formed in the area surrounded by the lower cup 31a and the lower cup 31b, and is surrounded by the lower cup 31b and the lower cup 31c A discharge port 32c is formed in the area of residence. Each discharge port 32a-32c is connected to an exhaust pump (all not shown) through a discharge pipe, a liquid discharge tank, and a gas-liquid separator. Thereby, the processing liquid scattered from the substrate W can be separated and recovered through the discharge ports 32a to 32c. Incidentally, the up and down drive mechanism is electrically connected to the control unit 10b. The control unit 10b controls the upper and lower cups 30a-30c to be driven up and down.

背面噴嘴頭40是在固定軸41之上端以固定狀態而獲得支持。固定軸41是以非接觸而貫穿旋轉機構24，固定在處理室9內之底部33。在固定軸41之上端獲得支持之背面噴嘴頭40是與旋轉體22之間具有間隙。藉此，背面噴嘴頭40雖然是固定之狀態，但不會與旋轉體22一起旋轉。該背面噴嘴頭40是突出至旋轉體22之上面側，在旋轉體22之上面之與背面噴嘴頭40之外周部對應之位置形成有往上方之環狀壁42。另一方面，背面噴嘴頭40之外周部是在下面開放形成可將環狀壁42容納於內部之環狀溝43。亦即，環狀壁42與環狀溝43是形成迷宮構造，可阻止在旋轉體22之上面側飛散之處理液沿著固定軸41而流出至杯體30之外部之情形。The back nozzle head 40 is supported on the upper end of the fixed shaft 41 in a fixed state. The fixed shaft 41 penetrates the rotating mechanism 24 in a non-contact manner and is fixed to the bottom 33 in the processing chamber 9. The back nozzle head 40 supported on the upper end of the fixed shaft 41 has a gap with the rotating body 22. As a result, although the back nozzle head 40 is in a fixed state, it does not rotate with the rotating body 22. The rear nozzle head 40 protrudes to the upper surface side of the rotating body 22, and an upward annular wall 42 is formed on the upper surface of the rotating body 22 at a position corresponding to the outer peripheral portion of the rear nozzle head 40. On the other hand, the outer peripheral portion of the back nozzle head 40 is open at the bottom to form an annular groove 43 that can accommodate the annular wall 42 inside. That is, the ring-shaped wall 42 and the ring-shaped groove 43 form a labyrinth structure, which can prevent the processing liquid scattered on the upper side of the rotating body 22 from flowing out of the cup 30 along the fixed shaft 41.

如圖2所示，背面噴嘴頭40是形成有將上面開放之凹部44。該凹部44是形成圓錐形狀，隨著從上部至下部而直徑逐漸變小。背面噴嘴頭40之上面之凹部44之周邊部形成有往徑方向外側而變低傾斜之傾斜面45。As shown in FIG. 2, the back nozzle head 40 is formed with a recess 44 that opens the upper surface. The concave portion 44 is formed into a conical shape, and the diameter gradually decreases from the upper portion to the lower portion. The peripheral portion of the concave portion 44 on the upper surface of the back nozzle head 40 is formed with an inclined surface 45 which becomes lower and inclined outward in the radial direction.

在凹部44之底部具有開口，其是形成排液部之排液口46之一端。該排液口46是用於將噴射至基板W之背面而在基板W反射、滴下至凹部44內面之處理液排出。排液口46之另一端是與排液管47之一端連接。雖然未圖示，但排液管47之另一端是與各排出口32a~32c同樣，透過氣液分離器而與排氣泵連接。An opening is formed at the bottom of the recess 44, which is one end of the liquid discharge port 46 forming the liquid discharge part. The liquid discharge port 46 is for discharging the processing liquid sprayed onto the back surface of the substrate W, reflected on the substrate W, and dripped onto the inner surface of the recess 44. The other end of the drain port 46 is connected to one end of the drain tube 47. Although not shown, the other end of the discharge pipe 47 is connected to the exhaust pump through the gas-liquid separator in the same way as the discharge ports 32a to 32c.

在凹部44之面形成有下部處理液噴嘴48與下部氣體用噴嘴50。下部處理液噴嘴48是與處理液供給管49之一端連接，下部氣體用噴嘴50是與氣體供給管51之一端連接。處理液供給管49與氣體供給管51之另一端分別與氣液供給單元10a連接。附帶一提，亦可在凹部44之面以預定間隔而將下部處理液噴嘴48與下部氣體用噴嘴50分別設置複數個。本實施形態是將2個下部處理液噴嘴48、2個下部氣體用噴嘴50於凹部44之周方向以大致90度間隔而形成。A lower processing liquid nozzle 48 and a lower gas nozzle 50 are formed on the surface of the recess 44. The lower processing liquid nozzle 48 is connected to one end of the processing liquid supply pipe 49, and the lower gas nozzle 50 is connected to one end of the gas supply pipe 51. The other ends of the processing liquid supply pipe 49 and the gas supply pipe 51 are connected to the gas-liquid supply unit 10a, respectively. Incidentally, a plurality of lower processing liquid nozzles 48 and lower gas nozzles 50 may be provided on the surface of the recess 44 at predetermined intervals. In this embodiment, two lower processing liquid nozzles 48 and two lower gas nozzles 50 are formed at intervals of approximately 90 degrees in the circumferential direction of the recess 44.

通過處理液供給管49而供給之處理液S(例如APM)或處理液L(例如純水)是從下部處理液噴嘴48往軸轉保持機構21所保持之基板W之背面噴射。通過氣體供給管51而供給之氣體G(例如氮)是從下部氣體用噴嘴50而往基板之背面噴射。The processing liquid S (for example, APM) or the processing liquid L (for example, pure water) supplied through the processing liquid supply pipe 49 is sprayed from the lower processing liquid nozzle 48 toward the back of the substrate W held by the pivot holding mechanism 21. The gas G (for example, nitrogen) supplied through the gas supply pipe 51 is sprayed from the lower gas nozzle 50 toward the back surface of the substrate.

下部處理液噴嘴48與下部氣體用噴嘴50之噴射方向是對中心軸R傾斜預定之角度，往軸轉保持機構21所保持之基板W之略旋轉中心噴射處理液S、L、氣體G。The spraying directions of the lower processing liquid nozzle 48 and the lower gas nozzle 50 are inclined at a predetermined angle with respect to the central axis R, and the processing liquids S, L, and gas G are sprayed toward the slightly rotating center of the substrate W held by the pivot holding mechanism 21.

朝旋轉之基板W供給之處理液S、L是藉由離心力而分散至基板W之背面之大致整體，且在基板W彈回之處理液幾乎都滴下至凹部44內。另外，與處理液S、L同樣，氣體G亦是作用在基板W之背面之大致整體。The processing liquids S and L supplied to the rotating substrate W are dispersed to the entire back surface of the substrate W by centrifugal force, and almost all the processing liquid rebounded by the substrate W drops into the concave portion 44. In addition, like the processing liquids S and L, the gas G also acts on the substantially entire surface of the back surface of the substrate W.

亦可以將處理液S、L往從基板W之旋轉中心偏移之位置噴射。同樣地，氣體G亦可以是往從基板W之旋轉中心偏移之位置噴射。處理液S、L、氣體G之供給是由控制單元10b控制。The processing liquids S and L may be ejected to a position offset from the rotation center of the substrate W. Similarly, the gas G may be injected to a position offset from the rotation center of the substrate W. The supply of the processing liquids S, L, and gas G is controlled by the control unit 10b.

第1噴嘴52是朝軸轉保持機構21所保持之基板W之表面供給處理液L(例如純水)。該第1噴嘴52是藉由第1噴嘴移動機構53而可沿著軸轉保持機構21所保持之基板W之表面搖動。處理液L是從氣液供給單元10a透過配管(未圖示)而供給至第1噴嘴52。The first nozzle 52 supplies the processing liquid L (for example, pure water) toward the surface of the substrate W held by the pivot holding mechanism 21. The first nozzle 52 is swingable along the surface of the substrate W held by the pivot holding mechanism 21 by the first nozzle moving mechanism 53. The processing liquid L is supplied to the first nozzle 52 from the gas-liquid supply unit 10a through a pipe (not shown).

第1噴嘴移動機構53是藉由旋轉軸、馬達等而構成。舉例來說，第1噴嘴移動機構53是令第1噴嘴52移動於液供給位置、退避位置。液供給位置是與軸轉保持機構21所保持之基板W之表面之中央附近對向之位置，退避位置是自液供給位置退避而可將基板W搬入或搬出、對基板W進行乾燥處理的位置。The first nozzle moving mechanism 53 is configured by a rotating shaft, a motor, or the like. For example, the first nozzle moving mechanism 53 moves the first nozzle 52 to the liquid supply position and the retreat position. The liquid supply position is a position facing the center of the surface of the substrate W held by the pivot holding mechanism 21, and the retreat position is a position where the substrate W can be carried in or out and the substrate W can be dried by retreating from the liquid supply position. .

第2噴嘴54是噴霧嘴。第2噴嘴54是朝軸轉保持機構21所保持之基板W之表面供給霧狀之處理液S。該第2噴嘴54是藉由第2噴嘴移動機構55而可沿著軸轉保持機構21所保持之基板W之表面搖動。處理液S是從氣液供給單元10a透過配管(未圖示)而供給至第2噴嘴54。The second nozzle 54 is a spray nozzle. The second nozzle 54 supplies mist-like processing liquid S to the surface of the substrate W held by the pivot holding mechanism 21. The second nozzle 54 is swingable along the surface of the substrate W held by the pivot holding mechanism 21 by the second nozzle moving mechanism 55. The treatment liquid S is supplied to the second nozzle 54 from the gas-liquid supply unit 10a through a pipe (not shown).

與第1噴嘴移動機構53同樣，第2噴嘴移動機構55是藉由旋轉軸、馬達等而構成。舉例來說，第2噴嘴移動機構55是令第2噴嘴54移動於液供給位置、退避位置。第1噴嘴移動機構53及第2噴嘴移動機構55是與控制單元10b電性連接。藉由控制單元10b，控制各噴嘴之移動、處理液之供給動作。Like the first nozzle moving mechanism 53, the second nozzle moving mechanism 55 is configured by a rotating shaft, a motor, or the like. For example, the second nozzle moving mechanism 55 moves the second nozzle 54 to the liquid supply position and the retreat position. The first nozzle moving mechanism 53 and the second nozzle moving mechanism 55 are electrically connected to the control unit 10b. The control unit 10b controls the movement of each nozzle and the supply operation of the processing liquid.

如圖2及圖3所示，遮蔽機構60具有遮蔽板昇降機構61、臂62、遮蔽板63、遮蔽板旋轉機構64、遮蔽板保持機構65。As shown in FIGS. 2 and 3, the shielding mechanism 60 includes a shielding plate lifting mechanism 61, an arm 62, a shielding plate 63, a shielding plate rotating mechanism 64, and a shielding plate holding mechanism 65.

遮蔽板昇降機構61具有以與中心軸R正交之方向(與紙面正交之方向)作為軸之旋動構件61a。臂62之一端是固定於旋動構件61a。若遮蔽板昇降機構61令旋動構件61a在預定之角度範圍旋動，則臂62會以旋動構件61a作為軸而進行圓弧運動。該遮蔽板昇降機構61是如後述般地令臂62進行圓弧運動，藉此，可令遮蔽板63在接近離開方向(上下方向)移動。The shielding plate elevating mechanism 61 has a rotating member 61a having a direction orthogonal to the central axis R (direction orthogonal to the paper surface) as an axis. One end of the arm 62 is fixed to the rotating member 61a. If the shielding plate lifting mechanism 61 causes the rotating member 61a to rotate within a predetermined angle range, the arm 62 will perform an arc motion using the rotating member 61a as an axis. The shielding plate lifting mechanism 61 causes the arm 62 to move in an arc as described later, whereby the shielding plate 63 can be moved in the approaching direction (vertical direction).

臂62之另一端是透過連接銷65a而與遮蔽板保持機構65連接。與上述之旋動構件61a同樣，連接銷65a是設在與中心軸R正交之方向。附帶一提，在連接銷65a與臂62之連接部、連接銷65a與遮蔽板保持機構65之連接部分別具有旋轉軸承(未圖示)，藉由遮蔽板昇降機構61之運作而令臂62搖動時，遮蔽板63是維持水平狀態而上下移動。The other end of the arm 62 is connected to the shielding plate holding mechanism 65 through a connecting pin 65a. Like the above-mentioned rotating member 61a, the connecting pin 65a is provided in a direction orthogonal to the central axis R. Incidentally, the connecting portion between the connecting pin 65a and the arm 62 and the connecting portion between the connecting pin 65a and the shielding plate holding mechanism 65 are provided with rotary bearings (not shown), and the arm 62 is controlled by the operation of the shielding plate lifting mechanism 61 When shaking, the shielding plate 63 moves up and down while maintaining a horizontal state.

如圖3所示，遮蔽板63是圓盤狀之構件，且於中央具有以中心軸Q作為軸之圓形之噴嘴開口63a。該遮蔽板63之直徑舉例來說是與基板W大致同直徑之大小。附帶一提，雖然亦可以比基板W之大小還要稍微大，但在本實施形態，遮蔽板63之直徑是比基板W之直徑還要稍微小。這是為了防止當遮蔽板63與基板W之距離窄時，遮蔽板63對支持銷23干涉。遮蔽板63是藉由螺絲(未圖示)而固定在位於遮蔽板旋轉機構64之下端部之連接板64d。As shown in FIG. 3, the shielding plate 63 is a disc-shaped member, and has a circular nozzle opening 63a having a central axis Q as an axis in the center. The diameter of the shielding plate 63 is, for example, approximately the same diameter as the substrate W. Incidentally, although it may be slightly larger than the size of the substrate W, in this embodiment, the diameter of the shielding plate 63 is slightly smaller than the diameter of the substrate W. This is to prevent the shielding plate 63 from interfering with the support pin 23 when the distance between the shielding plate 63 and the substrate W is narrow. The shielding plate 63 is fixed to the connecting plate 64d at the lower end of the shielding plate rotating mechanism 64 by screws (not shown).

遮蔽板旋轉機構64具有旋轉體64a、本體64b、馬達部64c、連接板64d。在旋轉體64a與本體64b之內部，以中心軸Q作為中心而形成有截面圓形之氣體供給噴嘴73。該氣體供給噴嘴73之一端是與噴嘴開口63a連通。在本體64b之側壁側設有氣體供給口70，與氣體導入路71之一端連接。氣體導入路71之另一端是與氣體供給噴嘴73連接，若從氣體供給口70供給氣體G，則該氣體G會從噴嘴開口63a而往基板W供給。另外，在氣體供給噴嘴73之內部，沿著中心軸Q而形成有將處理液P(例如IPA：異丙醇)朝基板W之表面噴射之處理液供給噴嘴67。該處理液供給噴嘴67之一端是貫穿遮蔽板保持機構65、與處理液導入部66連接。處理液供給噴嘴67之另一端是形成噴嘴吐出口68。該噴嘴吐出口68是位於噴嘴開口63a之中央。另外，與氣體供給噴嘴73、噴嘴開口63a同樣，處理液供給噴嘴67是以中心軸Q作為軸，截面形成圓形狀。旋轉體64a是上部成為凸狀之形狀，在中央設有開口部64f。本體64b之下部是與該凸狀之形狀對應般地形成凹狀，在凸狀部分與凹狀部分之對向面間形成有間隙。本體64b之中央部是設有將氣體供給噴嘴73包圍般地形成之突出部64g。該突出部64g是***開口部64f。在開口部64f之內周面與突出部64g之外周面之間形成有間隙。在該間隙設有軸承64e，旋轉體64a是非接觸地受本體64b所支持。該軸承64e舉例來說是旋轉軸承。The shielding plate rotating mechanism 64 has a rotating body 64a, a main body 64b, a motor portion 64c, and a connecting plate 64d. Inside the rotating body 64a and the main body 64b, a gas supply nozzle 73 having a circular cross section is formed with the center axis Q as the center. One end of the gas supply nozzle 73 is in communication with the nozzle opening 63a. A gas supply port 70 is provided on the side wall side of the body 64b, and is connected to one end of the gas introduction path 71. The other end of the gas introduction path 71 is connected to the gas supply nozzle 73. When the gas G is supplied from the gas supply port 70, the gas G is supplied to the substrate W from the nozzle opening 63a. In addition, inside the gas supply nozzle 73, a processing liquid supply nozzle 67 that sprays the processing liquid P (for example, IPA: isopropyl alcohol) toward the surface of the substrate W is formed along the central axis Q. One end of the processing liquid supply nozzle 67 penetrates the shielding plate holding mechanism 65 and is connected to the processing liquid introduction part 66. The other end of the processing liquid supply nozzle 67 forms a nozzle discharge port 68. The nozzle discharge port 68 is located in the center of the nozzle opening 63a. In addition, like the gas supply nozzle 73 and the nozzle opening 63a, the processing liquid supply nozzle 67 has a circular cross section with the central axis Q as an axis. The rotating body 64a has a convex shape at the top, and an opening 64f is provided in the center. The lower portion of the main body 64b is formed into a concave shape corresponding to the convex shape, and a gap is formed between the opposing surfaces of the convex portion and the concave portion. The central portion of the main body 64b is provided with a protruding portion 64g formed so as to surround the gas supply nozzle 73. The protrusion 64g is an insertion opening 64f. A gap is formed between the inner peripheral surface of the opening 64f and the outer peripheral surface of the protruding portion 64g. A bearing 64e is provided in this gap, and the rotating body 64a is supported by the body 64b in a non-contact manner. The bearing 64e is, for example, a rotary bearing.

馬達部64c是設置在形成在開口部64f之內周面與突出部64g之外周面之間之間隙。舉例來說，將相當於馬達部64c之定子之複數個線圈64h固定而設在突出部64g之外周面，將相當於馬達部64c之轉子之永久磁鐵64i固定而設在開口部64f之內周面。永久磁鐵64i是以在每個預定角度將極性反轉的方式而成為環狀，且與線圈64h對向配置。所以，將電流流進線圈64h後，旋轉體64a及遮蔽板63是與永久磁鐵64i一體地以中心軸Q作為軸而旋轉。The motor portion 64c is provided in a gap formed between the inner peripheral surface of the opening 64f and the outer peripheral surface of the protruding portion 64g. For example, a plurality of coils 64h corresponding to the stator of the motor portion 64c are fixed and provided on the outer peripheral surface of the protruding portion 64g, and a permanent magnet 64i corresponding to the rotor of the motor portion 64c is fixed and provided on the inner periphery of the opening portion 64f surface. The permanent magnet 64i has a ring shape so that its polarity is reversed at every predetermined angle, and is arranged to face the coil 64h. Therefore, after the current flows into the coil 64h, the rotating body 64a and the shielding plate 63 are rotated integrally with the permanent magnet 64i about the central axis Q as an axis.

遮蔽板保持機構65是將臂62與本體64b連繫之構件，其是固定而設在本體64b之上部。在該遮蔽板保持機構65之中央設有連接銷65a可***之孔(未圖示)。The shielding plate holding mechanism 65 is a member that connects the arm 62 and the main body 64b, and is fixed and provided above the main body 64b. A hole (not shown) into which the connecting pin 65a can be inserted is provided in the center of the shielding plate holding mechanism 65.

在遮蔽板保持機構65之上部設有處理液導入部66。該處理液導入部66之一端是與將遮蔽板保持機構65之內部貫穿之處理液供給噴嘴67連接。另外，處理液導入部66之另一端是與從氣液供給單元10a供給處理液P之供給管(未圖示)連接。遮蔽板昇降機構61、遮蔽板旋轉機構64是與控制單元10b電性連接。藉由控制單元10b，控制遮蔽板63之昇降及旋轉。A processing liquid introduction part 66 is provided above the shielding plate holding mechanism 65. One end of the processing liquid introduction part 66 is connected to a processing liquid supply nozzle 67 penetrating the inside of the shielding plate holding mechanism 65. In addition, the other end of the processing liquid introduction portion 66 is connected to a supply pipe (not shown) that supplies the processing liquid P from the gas-liquid supply unit 10a. The shielding plate lifting mechanism 61 and the shielding plate rotating mechanism 64 are electrically connected to the control unit 10b. The control unit 10b controls the lifting and rotation of the shielding plate 63.

接著，說明基板處理動作。首先，藉由搬運機器人4而從基板收納箱2取出基板W。搬運機器人4是因應需要而沿著搬運導軌5移動，在停止處回轉而將基板W搬入緩衝台6。或者，搬運機器人4是不沿著搬運導軌5移動，只藉由回轉而將基板W搬入緩衝台6。之後，藉由搬運機器人7而將搬入至緩衝台6之基板W取出。搬運機器人7是因應需要而沿著搬運導軌8移動至目的之處理室9之附近，在停止處回轉而將基板W搬入目的之處理室9。或者，搬運機器人7是不沿著搬運導軌8移動，只藉由回轉而搬入目的之處理室9。此時，處理室9之閘門是開啟。Next, the substrate processing operation will be described. First, the substrate W is taken out from the substrate storage box 2 by the transfer robot 4. The transport robot 4 moves along the transport rail 5 as necessary, and rotates at the stop to transport the substrate W into the buffer table 6. Alternatively, the transfer robot 4 does not move along the transfer rail 5 and only transfers the substrate W into the buffer table 6 by turning. Thereafter, the substrate W carried into the buffer table 6 is taken out by the transfer robot 7. The transport robot 7 moves along the transport rail 8 to the vicinity of the target processing chamber 9 as necessary, and rotates at the stop to transfer the substrate W into the target processing chamber 9. Alternatively, the transport robot 7 is not moved along the transport rail 8 and is transported into the target processing chamber 9 only by turning. At this time, the gate of the processing chamber 9 is opened.

藉由軸轉保持機構21而將搬入至處理室9之基板W予以保持。此時，如圖4(a)所示，上杯30a~30c是下降之狀態。另外，遮蔽機構60之遮蔽板63是定位在待機位置(圖4中以符號T1顯示之位置)。如圖4(a)所示，該待機位置是位於軸轉保持機構21之上方，且當搬運機器人7將基板W搬入處理室9時不會妨礙基板W之搬入。The substrate W carried into the processing chamber 9 is held by the pivot holding mechanism 21. At this time, as shown in FIG. 4(a), the upper cups 30a to 30c are in a lowered state. In addition, the shielding plate 63 of the shielding mechanism 60 is positioned at the standby position (the position shown by symbol T1 in FIG. 4). As shown in FIG. 4( a ), this standby position is located above the pivoting holding mechanism 21, and when the transport robot 7 carries the substrate W into the processing chamber 9, it does not hinder the substrate W from being carried in.

之後，搬運機器人7是自處理室9退避，令閘門關閉。After that, the transport robot 7 retreats from the processing chamber 9 and closes the gate.

接著，如圖4(b)，藉由上下驅動機構而令上杯30b與上杯30c上昇。藉由旋轉機構24而令軸轉保持機構21所保持之基板W低速(例如500rpm)旋轉。與基板W之旋轉同時，藉由第1噴嘴移動機構53而將第1噴嘴52移動至基板W之中央。Next, as shown in FIG. 4(b), the upper cup 30b and the upper cup 30c are raised by the vertical driving mechanism. The substrate W held by the pivot holding mechanism 21 is rotated at a low speed (for example, 500 rpm) by the rotating mechanism 24. Simultaneously with the rotation of the substrate W, the first nozzle movement mechanism 53 moves the first nozzle 52 to the center of the substrate W.

從氣體供給口70供給氣體G，從氣體供給噴嘴73噴射氣體G。如後述，實行該氣體G之理由是，阻止被供給至基板W之表面之處理液L或處理液S因為在基板W之表面發生液體飛濺而進入噴嘴開口63a、噴嘴吐出口68之情形。附帶一提，關於氣體之噴射量，舉例來說每分鐘50公升程度。另外，如後述，該狀態之來自氣體供給噴嘴73之氣體G供給是持續到圖4(g)之前一刻、亦即遮蔽板63定位至乾燥處理位置T3之前一刻。The gas G is supplied from the gas supply port 70, and the gas G is injected from the gas supply nozzle 73. As described later, the reason for implementing the gas G is to prevent the processing liquid L or the processing liquid S supplied to the surface of the substrate W from entering the nozzle opening 63a and the nozzle discharge port 68 due to the occurrence of liquid splash on the surface of the substrate W. Incidentally, regarding the amount of gas injection, for example, about 50 liters per minute. In addition, as will be described later, the supply of gas G from the gas supply nozzle 73 in this state is continued until immediately before FIG. 4(g), that is, immediately before the shielding plate 63 is positioned to the drying processing position T3.

接著，從第1噴嘴52朝基板W之表面之中央供給處理液L。藉此，將附著在基板W表面之粒子去除。該處理液L是利用旋轉之基板W之離心力而往基板W之外周擴散，從基板W之外周飛散。從基板W飛散之處理液L會與上昇之上杯30b之內周面衝撞，沿著該內周面而往排出口32b下流。下流之處理液L是通過與排出口32b連接之排出管而被回收。Next, the processing liquid L is supplied from the first nozzle 52 toward the center of the surface of the substrate W. By this, the particles adhering to the surface of the substrate W are removed. The processing liquid L is diffused toward the outer periphery of the substrate W by the centrifugal force of the rotating substrate W, and is scattered from the outer periphery of the substrate W. The processing liquid L scattered from the substrate W collides with the inner peripheral surface of the upper cup 30b, and flows down along the inner peripheral surface toward the discharge port 32b. The downstream processing liquid L is recovered through a discharge pipe connected to the discharge port 32b.

另外，當朝基板W之表面供給處理液L時，遮蔽機構60之遮蔽板63仍是定位在待機位置T1，遮蔽板63是藉由遮蔽板旋轉機構64而旋轉。遮蔽板63之旋轉數是固定之旋轉數(例如500rpm)。旋轉方向是朝與基板W相同之方向旋轉。藉由該遮蔽板63之旋轉，可利用離心力而將因為基板W表面之處理液L之液體飛濺而附著到遮蔽板63之與基板W對向之面之處理液L之液滴甩開而去除。藉由將附著到遮蔽板63之與基板W對向之面之處理液L之液滴去除，可抑制處理液L之液滴從遮蔽板63落下至基板W表面之情形。另外，若不理會附著到遮蔽板63之與基板W對向之面之處理液L之液滴，則可能會固化而成為粒子之原因，故亦可阻止此情形。In addition, when the processing liquid L is supplied to the surface of the substrate W, the shielding plate 63 of the shielding mechanism 60 is still positioned at the standby position T1, and the shielding plate 63 is rotated by the shielding plate rotating mechanism 64. The rotation number of the shielding plate 63 is a fixed rotation number (for example, 500 rpm). The rotation direction is to rotate in the same direction as the substrate W. By the rotation of the shielding plate 63, the droplets of the processing liquid L attached to the surface of the shielding plate 63 opposite to the substrate W due to the splash of the processing liquid L on the surface of the substrate W can be removed and removed by centrifugal force . By removing the droplets of the processing liquid L attached to the surface of the shielding plate 63 opposite to the substrate W, the droplets of the processing liquid L can be prevented from falling from the shielding plate 63 to the surface of the substrate W. In addition, if the droplets of the processing liquid L adhering to the surface of the shielding plate 63 facing the substrate W are ignored, it may solidify and become a cause of particles, so this situation can also be prevented.

另外，在從第1噴嘴52將處理液L朝基板W之表面供給之同時，從下部處理液噴嘴48將處理液L往基板W之背面供給。藉此，將附著在基板W之背面之粒子去除。供給至基板W之背面之處理液L是朝基板W之外周擴散，從基板W之背面之外周飛散。從該基板W之背面之外周飛散之處理液L會與上昇之上杯30b之內周面衝撞，沿著該內周面而往排出口32b下流。滴下之處理液L是通過與排出口32b連接之排出管而被回收。附帶一提，處理液L之供給時間是事先設定之時間，在本實施形態是例如10秒。In addition, while the processing liquid L is supplied from the first nozzle 52 toward the front surface of the substrate W, the processing liquid L is supplied from the lower processing liquid nozzle 48 toward the back surface of the substrate W. By this, the particles attached to the back surface of the substrate W are removed. The processing liquid L supplied to the back surface of the substrate W diffuses toward the outer periphery of the substrate W, and is scattered from the outer periphery of the back surface of the substrate W. The processing liquid L scattered from the outer periphery of the back surface of the substrate W collides with the inner peripheral surface of the upper cup 30b, and flows down the discharge port 32b along the inner peripheral surface. The dropped processing liquid L is recovered through a discharge pipe connected to the discharge port 32b. Incidentally, the supply time of the processing liquid L is a time set in advance, and in this embodiment is, for example, 10 seconds.

經過事先設置之時間後，停止來自第1噴嘴52及下部處理液噴嘴48之處理液L之供給。藉由第1噴嘴移動機構53，令第1噴嘴52移動至退避位置。After the time set in advance, the supply of the processing liquid L from the first nozzle 52 and the lower processing liquid nozzle 48 is stopped. The first nozzle moving mechanism 53 moves the first nozzle 52 to the retracted position.

接著，如圖4(c)所示，上杯30c維持著上昇狀態，藉由上下驅動機構而令上杯30b下降。藉由第2噴嘴移動機構55，令第2噴嘴54移動至基板W之中央附近。然後，在從第2噴嘴54將霧狀之處理液S朝基板W之表面供給之同時，利由第2噴嘴移動機構55而令第2噴嘴54在基板W之中心與基板W之外周之間往復並搖動。另外，在將霧狀之處理液S朝基板W之表面供給之同時，從下部處理液噴嘴48將處理液S往基板W之背面供給。附帶一提，從下部處理液噴嘴48是供給液狀之處理液S。利用該處理液S，將附著在基板W之包含氧化物之粒子去除。附帶一提，在此之處理液S之供給是事先設定之時間，在本實施形態是例如30秒。Next, as shown in FIG. 4(c), the upper cup 30c maintains the ascending state, and the upper cup 30b is lowered by the vertical drive mechanism. The second nozzle moving mechanism 55 moves the second nozzle 54 to the vicinity of the center of the substrate W. Then, while the mist-like processing liquid S is supplied from the second nozzle 54 toward the surface of the substrate W, the second nozzle 54 is moved between the center of the substrate W and the outer periphery of the substrate W by the second nozzle moving mechanism 55 Reciprocate and shake. In addition, while the mist-like processing liquid S is supplied toward the surface of the substrate W, the processing liquid S is supplied from the lower processing liquid nozzle 48 toward the back of the substrate W. Incidentally, the liquid processing liquid S is supplied from the lower processing liquid nozzle 48. With this processing liquid S, oxide-containing particles attached to the substrate W are removed. Incidentally, the supply of the processing liquid S here is a time set in advance, and in this embodiment is, for example, 30 seconds.

另外，遮蔽板63在將處理液S朝基板W之表面供給時亦是於待機位置T1旋轉。藉此，可利用離心力而將因為供給至基板W表面之處理液S之液體飛濺而附著到遮蔽板63之與基板W對向之面之處理液S之液滴甩開而去除。藉此，可阻止處理液S之液滴從遮蔽板63之與基板W對向之面朝基板W之表面落下之情形。另外，若不理會附著到遮蔽板63之與基板W對向之面之處理液S之液滴，則可能會固化而成為粒子之原因，故亦可阻止此情形。In addition, the shielding plate 63 also rotates at the standby position T1 when the processing liquid S is supplied toward the surface of the substrate W. Thereby, the droplets of the processing liquid S attached to the surface of the shielding plate 63 opposite to the substrate W due to the splash of the processing liquid S supplied to the surface of the substrate W can be shaken off and removed by centrifugal force. This can prevent the droplets of the processing liquid S from falling from the surface of the shielding plate 63 facing the substrate W toward the surface of the substrate W. In addition, if the droplets of the processing liquid S adhering to the surface of the shielding plate 63 facing the substrate W are ignored, it may solidify and become a cause of particles, so this situation can also be prevented.

供給至基板W之霧狀之處理液S是因為基板W之旋轉而從基板W之外周飛散。飛散之霧狀之處理液S會與上昇之上杯30c之內周面衝撞，沿著該內周面而往排出口32c滴下。滴下之霧狀之處理液S是通過排出口32c而被回收。另外，供給至基板W之背面之處理液S亦從基板W之背面之外周飛散，而於上昇之上杯30c被回收。The mist-like processing liquid S supplied to the substrate W is scattered from the outer periphery of the substrate W due to the rotation of the substrate W. The scattered mist-shaped processing liquid S collides with the inner peripheral surface of the upper cup 30c, and drops along the inner peripheral surface toward the discharge port 32c. The dropped mist-like processing liquid S is recovered through the discharge port 32c. In addition, the processing liquid S supplied to the back surface of the substrate W is also scattered from the outer periphery of the back surface of the substrate W, and the cup 30c is recovered above the ascent.

經過事先設定之時間後，停止來自第2噴嘴54之霧狀之處理液S之供給與來自下部處理液噴嘴48之處理液S之供給。然後，藉由第2噴嘴移動機構55，令第2噴嘴54移動至退避位置。After a predetermined time has elapsed, the supply of the mist-shaped processing liquid S from the second nozzle 54 and the supply of the processing liquid S from the lower processing liquid nozzle 48 are stopped. Then, by the second nozzle moving mechanism 55, the second nozzle 54 is moved to the retreat position.

如圖4(d)所示，上杯30b是與圖4(c)之處理同樣地下降，上杯30c是上昇之狀態。藉由第1噴嘴移動機構53，令第1噴嘴52從退避位置朝基板W之中央移動。再者，基板W之旋轉速度是高速(例如1000rpm)旋轉。然後，在從第1噴嘴52將處理液L朝基板W之表面之中央供給之同時，從下部處理液噴嘴48將處理液L往基板W之背面供給。藉此，利用處理液L將附著在接受前步驟之處理之基板W之表面之霧狀之處理液S與附著在基板W之背面之處理液S流掉。另外，藉由令基板W之旋轉速度成為高速，可提昇處理液S之排出。As shown in FIG. 4(d), the upper cup 30b is lowered in the same manner as the process of FIG. 4(c), and the upper cup 30c is in a raised state. The first nozzle moving mechanism 53 moves the first nozzle 52 from the retracted position toward the center of the substrate W. Furthermore, the rotation speed of the substrate W is high-speed (for example, 1000 rpm) rotation. Then, while the processing liquid L is supplied from the first nozzle 52 toward the center of the surface of the substrate W, the processing liquid L is supplied from the lower processing liquid nozzle 48 toward the back of the substrate W. Thereby, the processing liquid S adhering to the surface of the substrate W subjected to the processing in the previous step and the processing liquid S adhering to the back surface of the substrate W are drained by the processing liquid L. In addition, by increasing the rotation speed of the substrate W, the discharge of the processing liquid S can be increased.

該處理液L是從基板W之表面之外周及基板W之背面之外周飛散，與上杯30c之內周面衝撞，沿著其內周面而往排出口32c滴下。然後，通過排出管而被回收。The processing liquid L is scattered from the outer periphery of the surface of the substrate W and the outer periphery of the back of the substrate W, collides with the inner peripheral surface of the upper cup 30c, and drops along the inner peripheral surface toward the discharge port 32c. Then, it is recovered through the discharge pipe.

另外，遮蔽板63之旋轉亦於待機位置T1繼續，可將因為供給至基板W表面之處理液L之液體飛濺而附著到遮蔽板63之與基板W對向之面之處理液L去除。藉此，可抑制處理液L之液滴從遮蔽板63朝基板W之表面落下之情形。另外，若不理會附著到遮蔽板63之與基板W對向之面之處理液L之液滴，則可能會固化而成為粒子之原因，故亦可阻止此情形。In addition, the rotation of the shielding plate 63 also continues at the standby position T1, and the processing liquid L attached to the surface of the shielding plate 63 opposite to the substrate W due to the splash of the processing liquid L supplied to the surface of the substrate W can be removed. This can prevent the droplets of the processing liquid L from falling from the shielding plate 63 toward the surface of the substrate W. In addition, if the droplets of the processing liquid L adhering to the surface of the shielding plate 63 facing the substrate W are ignored, it may solidify and become a cause of particles, so this situation can also be prevented.

附帶一提，該處理液L之供給時間是事先設定之時間，在本實施形態是10秒。Incidentally, the supply time of the treatment liquid L is a time set in advance, and in this embodiment is 10 seconds.

接著，經過事先設定之時間後，停止來自第1噴嘴52及下部處理液噴嘴48之處理液L之供給。然後，藉由第1噴嘴移動機構53，令第1噴嘴52移動至退避位置。Next, after a predetermined time has elapsed, the supply of the processing liquid L from the first nozzle 52 and the lower processing liquid nozzle 48 is stopped. Then, by the first nozzle moving mechanism 53, the first nozzle 52 is moved to the retreat position.

如圖4(e)所示，藉由上下驅動機構而令上杯30a~30b上昇，基板W之旋轉速度是低速(例如10rpm)旋轉。然後，藉由遮蔽板昇降機構61令遮蔽板63下降至處理液供給位置(圖4(f)中以符號T2顯示之位置)，接近基板W。隨著該下降，從處理液供給噴嘴67將處理液P朝基板W之表面供給。處理液P之供給可以是如圖4(f)所示，與遮蔽板63之下降開始同時地開始，亦可以是在下降中途階段開始。As shown in FIG. 4(e), the upper cups 30a to 30b are raised by the vertical driving mechanism, and the rotation speed of the substrate W is rotated at a low speed (for example, 10 rpm). Then, the shielding plate lifting mechanism 61 lowers the shielding plate 63 to the processing liquid supply position (the position shown by symbol T2 in FIG. 4(f)), and approaches the substrate W. With this drop, the processing liquid P is supplied from the processing liquid supply nozzle 67 toward the surface of the substrate W. As shown in FIG. 4(f), the supply of the processing liquid P may be started simultaneously with the start of the lowering of the shielding plate 63, or may be started in the middle of the lowering.

接著，令遮蔽機構60之下降結束(圖4(f))。附帶一提，處理液P之供給可以是在遮蔽機構60定位到處理液供給位置T2後亦在事先設定之時間內(例如3秒)繼續。處理液供給位置T2是令從基板W之表面至遮蔽板63為止之距離成為如下距離之位置：即便從處理液供給噴嘴67供給之處理液P在基板W之表面彈回，亦不會超過杯體30而飛散之程度之距離。附帶一提，在供給處理液P之期間，來自氣體供給噴嘴73之氣體G之供給仍繼續。Next, the lowering of the shielding mechanism 60 is ended (FIG. 4(f)). Incidentally, the supply of the processing liquid P may be continued within a predetermined time (for example, 3 seconds) after the shielding mechanism 60 is positioned at the processing liquid supply position T2. The processing liquid supply position T2 is such that the distance from the surface of the substrate W to the shielding plate 63 becomes a distance such that even if the processing liquid P supplied from the processing liquid supply nozzle 67 bounces back on the surface of the substrate W, it will not exceed the cup The distance to the extent that the body 30 is scattered. Incidentally, while the processing liquid P is being supplied, the supply of the gas G from the gas supply nozzle 73 continues.

供給至基板W之處理液P會將在前步驟供給至基板W之表面之處理液L沖走。於是，基板W之表面是從處理液L換成處理液P。此時，因為旋轉之基板W之離心力，供給之處理液P是與被沖走之處理液L一起從基板W之表面之外周飛散，衝撞上杯30a之內周面，沿著上杯30a之內周面而往排出口32a滴下。然後，通過排出管而被回收。The processing liquid P supplied to the substrate W will wash away the processing liquid L supplied to the surface of the substrate W in the previous step. Thus, the surface of the substrate W is changed from the processing liquid L to the processing liquid P. At this time, due to the centrifugal force of the rotating substrate W, the supplied processing liquid P is scattered from the outer periphery of the surface of the substrate W together with the washed processing liquid L, colliding against the inner peripheral surface of the cup 30a, along the upper cup 30a The inner peripheral surface drops to the discharge port 32a. Then, it is recovered through the discharge pipe.

在處理液供給位置T2之處理液P之供給結束後，如圖4(g)所示，令遮蔽板63下降至乾燥處理位置(圖4中以符號T3顯示之位置)，更接近基板W。遮蔽板63定位到乾燥處理位置T3後，令從氣體供給噴嘴73吐出之氣體G之流量增加(例如毎分250公升)，以氣體G填充遮蔽板63與基板W之間之空間。藉此，由於可令基板W之表面附近之空氣減少，故可遮斷在基板W之表面附近之成為水痕之發生原因之氧。此時之基板W之旋轉是以高速(例如1000rpm)旋轉。藉此，在基板W之表面存在之處理液P會被因為高速旋轉而施加於基板W之離心力甩開。基板W之乾燥處理是如此地實行。從基板W之周邊往上杯30a之內周面飛散之處理液P是沿著上杯30a之內周面而往排出口32a滴下。然後，通過排出管而被回收。另外，在朝基板W之表面供給氣體G之同時，從下部氣體用噴嘴50將氣體G往基板W之背面供給。乾燥處理是在事先設定之時間內進行，例如10秒。After the supply of the processing liquid P at the processing liquid supply position T2 is completed, as shown in FIG. 4(g), the shielding plate 63 is lowered to the drying processing position (the position shown by symbol T3 in FIG. 4), closer to the substrate W. After the shielding plate 63 is positioned at the drying processing position T3, the flow rate of the gas G discharged from the gas supply nozzle 73 is increased (for example, 250 liters per minute), and the space between the shielding plate 63 and the substrate W is filled with the gas G. As a result, the air near the surface of the substrate W can be reduced, so that the oxygen near the surface of the substrate W that causes the occurrence of water marks can be blocked. At this time, the rotation of the substrate W is at a high speed (for example, 1000 rpm). Thereby, the processing liquid P existing on the surface of the substrate W is thrown away by the centrifugal force applied to the substrate W due to the high-speed rotation. The substrate W is dried in this way. The processing liquid P scattered from the periphery of the substrate W toward the inner peripheral surface of the upper cup 30a is dropped along the inner peripheral surface of the upper cup 30a toward the discharge port 32a. Then, it is recovered through the discharge pipe. In addition, while supplying the gas G toward the front surface of the substrate W, the gas G is supplied from the lower gas nozzle 50 to the back surface of the substrate W. The drying process is performed within a predetermined time, for example, 10 seconds.

接著，當設定之乾燥處理之時間過後，令基板W之旋轉及遮蔽板63之旋轉停止，令氣體G之供給亦停止。然後，如圖4(h)所示，藉由上下驅動機構令上杯30a~30c下降，藉由遮蔽板昇降機構61令遮蔽板63上昇至待機位置T1。Next, when the set drying time has elapsed, the rotation of the substrate W and the shielding plate 63 are stopped, and the supply of the gas G is also stopped. Then, as shown in FIG. 4(h), the upper cups 30a to 30c are lowered by the vertical driving mechanism, and the shielding plate 63 is raised to the standby position T1 by the shielding plate lifting mechanism 61.

接著，如圖4(i)所示，解放支持銷23之保持基板W，藉由搬運機器人7而從處理室9搬出。Next, as shown in FIG. 4(i), the holding substrate W of the liberation support pin 23 is carried out of the processing chamber 9 by the transfer robot 7.

如以上說明，根據第1實施形態，當朝基板W之表面供給處理液L及處理液S時，在待機位置T1，令遮蔽機構60之遮蔽板63旋轉。藉此，即便供給至基板W之表面之處理液L及處理液S因為在基板W之表面上液體飛濺而變成液滴、附著在遮蔽板63之與基板W對向之面，亦可利用由遮蔽板63之旋轉造成之離心力，在遮蔽板63朝處理液供給位置T2下降之前階段吹走而去除。所以，可抑制當為了乾燥處理而令遮蔽板63接近基板W時，處理液L、處理液S之液滴從遮蔽板63之與基板W對向之面朝基板W之表面落下而附著之情形，故可抑制基板W之品質不良。尤其，可防止在基板W之被處理面發生水痕之情形。藉此，可良好地對使用到處理液之基板進行處理。As described above, according to the first embodiment, when the processing liquid L and the processing liquid S are supplied to the surface of the substrate W, the shielding plate 63 of the shielding mechanism 60 is rotated at the standby position T1. Thereby, even if the processing liquid L and the processing liquid S supplied to the surface of the substrate W become droplets due to the liquid splash on the surface of the substrate W, and adhere to the surface of the shielding plate 63 opposite to the substrate W, it can be used The centrifugal force caused by the rotation of the shielding plate 63 is blown away and removed before the shielding plate 63 descends toward the processing liquid supply position T2. Therefore, when the shielding plate 63 is brought close to the substrate W for the purpose of drying, the droplets of the processing liquid L and the processing liquid S can fall from the surface of the shielding plate 63 facing the substrate W and adhere to the surface of the substrate W. Therefore, the defective quality of the substrate W can be suppressed. In particular, it is possible to prevent the occurrence of water marks on the processed surface of the substrate W. With this, the substrate using the processing liquid can be processed well.

另外，以遮蔽板63之與基板W對向之面未附著有處理液L或S之狀態，從處理液供給噴嘴67供給處理液P(IPA等)。所以，可效率佳地將基板W上之處理液L換成IPA等之處理液P。In addition, the processing liquid P (IPA, etc.) is supplied from the processing liquid supply nozzle 67 in a state where the processing liquid L or S is not attached to the surface of the shield plate 63 facing the substrate W. Therefore, the processing liquid L on the substrate W can be efficiently replaced with the processing liquid P such as IPA.

附帶一提，亦可以在為了乾燥處理而令遮蔽板63接近基板W時，停止遮蔽板63之旋轉。Incidentally, it is also possible to stop the rotation of the shielding plate 63 when the shielding plate 63 approaches the substrate W for the drying process.

[第2實施形態] 參考圖5來說明第2實施形態。[Second Embodiment] The second embodiment will be described with reference to FIG. 5.

圖5(a)~(e)顯示的是清洗遮蔽板63之遮蔽板清洗步驟。進行該步驟之時段是在基板W之處理結束、從處理室9搬出基板W之後，在未處理之基板W搬入處理室9之前。關於實施該清洗板清洗步驟之裝置，可以是使用與第1實施形態相同者。5(a) to (e) show the cleaning steps of the shielding plate 63 for cleaning the shielding plate 63. The time period for performing this step is after the processing of the substrate W is finished and the substrate W is carried out from the processing chamber 9 and before the unprocessed substrate W is carried into the processing chamber 9. Regarding the apparatus for performing the cleaning step of the cleaning plate, the same as in the first embodiment may be used.

圖5(a)顯示的是基板W之處理完成、上杯30a~30c下降、遮蔽板63上昇至待機位置T1、將基板W搬出之樣子(與圖4(i)顯示之狀態相同之狀態)。FIG. 5(a) shows the processing of the substrate W is completed, the upper cups 30a to 30c are lowered, the shielding plate 63 is raised to the standby position T1, and the substrate W is carried out (the same state as shown in FIG. 4(i)) .

將基板W搬出之後，如圖5(b)所示，遮蔽板63是下降至乾燥處理位置T3。之後，如圖5(c)所示，令遮蔽板63與軸轉保持機構21旋轉。在此，上杯30a~30c朝上下動機構上昇。從下部處理液噴嘴48將處理液L往遮蔽板63之與基板W對向之面(下面)供給。供給至遮蔽板63之處理液L是因為由遮蔽板63之旋轉造成之離心力，從遮蔽板63之外周朝上杯30a內周面飛散、被回收。After the substrate W is carried out, as shown in FIG. 5(b), the shielding plate 63 is lowered to the drying processing position T3. Thereafter, as shown in FIG. 5(c), the shielding plate 63 and the pivot holding mechanism 21 are rotated. Here, the upper cups 30a to 30c are raised toward the vertical movement mechanism. The processing liquid L is supplied from the lower processing liquid nozzle 48 to the surface (lower surface) of the shielding plate 63 facing the substrate W. The processing liquid L supplied to the shielding plate 63 is scattered by the centrifugal force caused by the rotation of the shielding plate 63 from the outer periphery of the shielding plate 63 toward the inner peripheral surface of the upper cup 30a and recovered.

當來自下部處理液噴嘴48之處理液L之供給結束後，如圖5(d)所示，從下部氣體用噴嘴50將氣體G往遮蔽板63之下面供給。於是，附著在遮蔽板63之下面之處理液L會因為遮蔽板63之旋轉與氣體G之供給而被去除。藉此，令遮蔽板63之下面乾燥。After the supply of the processing liquid L from the lower processing liquid nozzle 48 is completed, as shown in FIG. 5( d ), the gas G is supplied from the lower gas nozzle 50 to the lower surface of the shielding plate 63. Therefore, the processing liquid L adhering under the shielding plate 63 is removed due to the rotation of the shielding plate 63 and the supply of the gas G. By this, the lower surface of the shielding plate 63 is dried.

當來自下部氣體用噴嘴50之氣體G之供給結束後，如圖5(e)所示，停止遮蔽板63及軸轉保持機構21之旋轉。再者，遮蔽板63上昇至待機位置T1，上杯30a~30c下降。After the supply of the gas G from the lower gas nozzle 50 is completed, as shown in FIG. 5(e), the rotation of the shielding plate 63 and the pivot holding mechanism 21 is stopped. Furthermore, the shielding plate 63 rises to the standby position T1, and the upper cups 30a to 30c descend.

如以上說明，將基板W從處理室9搬出之後，對遮蔽板63之下面進行清洗、乾燥。藉此，具有與第1實施形態相同之效果。再者，由於將在處理基板W時附著到遮蔽板63下面之各處理液之液滴清洗而去除，故可提昇遮蔽板63之清洗度，可更加良好地對使用到處理液之基板進行處理。As described above, after the substrate W is carried out of the processing chamber 9, the lower surface of the shielding plate 63 is washed and dried. This has the same effect as the first embodiment. Furthermore, since the droplets of each processing liquid adhering to the lower surface of the shielding plate 63 when cleaning the substrate W are cleaned and removed, the cleaning degree of the shielding plate 63 can be improved, and the substrate using the processing liquid can be processed more favorably .

另外，在本實施形態，遮蔽板63之下面之清洗處理與乾燥處理是利用在基板W之背面處理所使用之下部處理液噴嘴48與下部氣體用噴嘴50。藉此，不需要為了遮蔽板63之清洗、乾燥而設置專用裝置，故可防止基板處理裝置1之大型化。In addition, in the present embodiment, the cleaning process and the drying process of the lower surface of the shielding plate 63 are performed by the lower processing liquid nozzle 48 and the lower gas nozzle 50 used for the back surface processing of the substrate W. This eliminates the need to provide a dedicated device for cleaning and drying the shielding plate 63, so that the substrate processing device 1 can be prevented from being enlarged.

附帶一提，並不是每當將基板W搬出則實行清洗遮蔽板63之步驟，可以是在處理預定片數之基板後才實行。Incidentally, the step of cleaning the shielding plate 63 is not executed every time the substrate W is carried out, but may be executed after processing a predetermined number of substrates.

[第3實施形態] 參考圖6來說明第3實施形態。附帶一提，第3實施形態是針對與第2實施形態不同之處來說明，其他之說明是予以省略。[Third Embodiment] A third embodiment will be described with reference to FIG. 6. Incidentally, the third embodiment is to explain the differences from the second embodiment, and the other explanations are omitted.

圖6(a)~(e)是相當於在第2實施形態說明之清洗遮蔽板63之步驟。附帶一提，與第2實施形態之不同是在圖6(c)之步驟追加遮蔽板63之周緣之側面部之清洗處理。6(a) to (e) are steps corresponding to the cleaning of the shielding plate 63 described in the second embodiment. Incidentally, the difference from the second embodiment is to add a cleaning process of the side portion of the periphery of the shielding plate 63 in the step of FIG. 6(c).

如圖6(c)所示，當從下部處理液噴嘴48將處理液L朝遮蔽板63之與基板對向之面(下面)供給時，控制單元10b控制成藉由第1噴嘴移動機構53而令第1噴嘴52位於遮蔽板63之周緣之上方。然後，從第1噴嘴52將處理液L往遮蔽板63之周緣供給，藉由處理液L清洗遮蔽板63之周緣部分之側面部。As shown in FIG. 6(c), when the processing liquid L is supplied from the lower processing liquid nozzle 48 toward the surface (lower surface) of the shield plate 63 opposite to the substrate, the control unit 10b is controlled by the first nozzle moving mechanism 53 The first nozzle 52 is positioned above the periphery of the shielding plate 63. Then, the processing liquid L is supplied from the first nozzle 52 to the peripheral edge of the shielding plate 63, and the side surface of the peripheral portion of the shielding plate 63 is cleaned by the processing liquid L.

如以上說明，根據第3實施形態，具有與第2實施形態相同之效果。再者，藉由處理液L，除了遮蔽板63之下面之外還清洗側面部。若讓各處理液之液滴就這樣附著在遮蔽板63，則可能發生附著之各處理液之液滴之堆積物析出而朝基板W之表面落下之情形。由於本實施形態可藉由清洗遮蔽板63之側面部而抑制處理液、IPA等之堆積物之生成，故可抑制因為基板W之汙染等而發生製品不良之情形。As described above, according to the third embodiment, it has the same effect as the second embodiment. Furthermore, with the treatment liquid L, the side portion is cleaned in addition to the lower surface of the shielding plate 63. If the droplets of the respective processing liquids are allowed to adhere to the shielding plate 63 in this way, the deposits of the droplets of the respective processing liquids may precipitate and fall toward the surface of the substrate W. In this embodiment, the side surfaces of the shielding plate 63 can be cleaned to suppress the formation of deposits such as the processing liquid and IPA, so that the occurrence of product defects due to contamination of the substrate W or the like can be suppressed.

另外，在本實施形態，遮蔽板63之側面部之清洗處理是利用在基板W之表面處理所使用之第1噴嘴52。藉此，即便是進行遮蔽板63之側面部之清洗的情況，亦可防止基板理裝置1之大型化。In the present embodiment, the first nozzle 52 used for the surface treatment of the substrate W is used for the cleaning process of the side portion of the shielding plate 63. Thereby, even if the side portion of the shielding plate 63 is cleaned, it is possible to prevent the substrate processing apparatus 1 from being enlarged.

附帶一提，第3實施形態是在處理預定片數之基板後才實行。另外，不只是令第1噴嘴52位於遮蔽板63之周緣之上方而供給處理液L，還可以令第1噴嘴52搖動而清洗遮蔽板63之上面。Incidentally, the third embodiment is implemented after processing a predetermined number of substrates. In addition, not only the first nozzle 52 is positioned above the periphery of the shielding plate 63 and the processing liquid L is supplied, but also the first nozzle 52 may be shaken to clean the upper surface of the shielding plate 63.

雖然以上說明了本發明之幾個實施形態，但該等實施形態是用來舉例，並非意圖要限定發明之範圍。該等新的實施形態能以其他之各式各樣之形態來實施，可在不超脫發明要旨之程度下進行各式各樣之省略、取代、變更。該等實施形態或其變形是被包含在發明之範圍、要旨，且被包含在申請專利範圍所記載之發明、其均等之範圍。Although several embodiments of the present invention have been described above, these embodiments are for examples, and are not intended to limit the scope of the invention. These new embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the patent application scope and their equivalent scope.

舉例來說，可以是將第1實施形態與第2實施形態與第3實施形態3予以組合。此情況下，當要將複數片基板W之處理持續地進行的情況下，可事先在控制單元10b之記憶部設定分別作為第1實施形態、第2實施形態、第3實施形態之實行條件之基板W之處理片數(設定片數)。於是，控制單元10b是以基板W之處理片數到達該設定之片數之情形作為條件，令各實施形態實行運作。具體而言，第1實施形態是每1片基板W之處理都實施，第2實施形態是每10片而進行，第3實施形態是每1批而進行。亦可以不是將3個實施形態全部組合，令第1實施形態與第2實施形態組合，令第1實施形態與第3實施形態組合。另外，設定片數零是不實施的意思。For example, the first embodiment, the second embodiment, and the third embodiment 3 may be combined. In this case, when the processing of a plurality of substrates W is to be continuously performed, the execution conditions of the first embodiment, the second embodiment, and the third embodiment can be set in the memory unit of the control unit 10b in advance, respectively. The number of substrates W processed (set number). Therefore, the control unit 10b operates the embodiments according to the condition that the number of substrates W processed reaches the set number. Specifically, in the first embodiment, the processing is performed for every substrate W, in the second embodiment, it is performed every 10 sheets, and in the third embodiment, it is performed every batch. Instead of combining all three embodiments, the first embodiment and the second embodiment may be combined, and the first embodiment and the third embodiment may be combined. In addition, setting the number of slices to zero means that it is not implemented.

附帶一提，本發明並非限定於上述實施形態，實施階段可在不超脫要旨之範圍進行各種變形。另外，亦可以適宜地將各實施形態組合而實施，此情況下，能獲得組合之效果。再者，上述實施形態包含有各種發明，可藉由從揭示之複數構成要件所選擇之組合來抽出各種發明。舉例來說，當即便從實施形態所顯示之全部構成要件刪除幾個構成要件亦可解決課題、獲得效果的情況下，可將刪除該構成要件後之構成當作發明而抽出。Incidentally, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made in the scope of the implementation stage without departing from the gist. In addition, it is also possible to appropriately implement each embodiment in combination, and in this case, the combined effect can be obtained. In addition, the above-mentioned embodiment includes various inventions, and various inventions can be extracted by a combination selected from the plural constituent elements disclosed. For example, if the problem can be solved and the effect can be obtained even if a few component requirements are deleted from all the component requirements shown in the embodiment, the configuration after deleting the component requirements can be extracted as an invention.

1‧‧‧基板處理裝置 2‧‧‧基板收納箱 3‧‧‧載置台 4、7‧‧‧搬運機器人 5、8‧‧‧搬運導軌 6‧‧‧緩衝台 9‧‧‧處理室 10‧‧‧附帶單元 10a‧‧‧氣液供給單元 10b‧‧‧控制單元 21‧‧‧軸轉保持機構 22‧‧‧旋轉體 23‧‧‧支持銷 24‧‧‧旋轉機構 30‧‧‧杯體 30a、30b、30c‧‧‧上杯 31a、31b、31c‧‧‧下杯 32a、32b、32c‧‧‧排出口 33‧‧‧底部 40‧‧‧背面噴嘴頭 41‧‧‧固定軸 42‧‧‧環狀壁 43‧‧‧環狀溝 44‧‧‧凹部 45‧‧‧傾斜面 46‧‧‧排液口 47‧‧‧排液管 48‧‧‧下部處理液噴嘴 49‧‧‧處理液供給管 50‧‧‧下部氣體用噴嘴 51‧‧‧氣體供給管 52‧‧‧第1噴嘴 53‧‧‧第1噴嘴移動機構 54‧‧‧第2噴嘴 55‧‧‧第2噴嘴移動機構 60‧‧‧遮蔽機構 61‧‧‧遮蔽板昇降機構 61a‧‧‧旋動構件 62‧‧‧臂 63‧‧‧遮蔽板 63a‧‧‧噴嘴開口 64‧‧‧遮蔽板旋轉機構 64a‧‧‧旋轉體 64b‧‧‧本體 64c‧‧‧馬達部 64d‧‧‧連接板 64e‧‧‧軸承 64f‧‧‧開口部 64g‧‧‧突出部 64h‧‧‧線圈 64i‧‧‧永久磁鐵 65‧‧‧遮蔽板保持機構 65a‧‧‧連接銷 66‧‧‧處理液導入部 67‧‧‧處理液供給噴嘴 68‧‧‧噴嘴吐出口 70‧‧‧氣體供給口 71‧‧‧氣體導入路 73‧‧‧氣體供給噴嘴 G‧‧‧氣體 L、S、P‧‧‧處理液 Q、R‧‧‧中心軸 T1‧‧‧待機位置 T2‧‧‧處理液供給位置 T3‧‧‧乾燥處理位置 W‧‧‧基板 1‧‧‧Substrate processing device 2‧‧‧Substrate storage box 3‧‧‧Placing table 4, 7‧‧‧ handling robot 5, 8‧‧‧Hand rail 6‧‧‧Buffer table 9‧‧‧Processing room 10‧‧‧With unit 10a‧‧‧gas liquid supply unit 10b‧‧‧Control unit 21‧‧‧Axis rotation holding mechanism 22‧‧‧rotating body 23‧‧‧support sales 24‧‧‧rotating mechanism 30‧‧‧Cup 30a, 30b, 30c 31a, 31b, 31c ‧‧‧ next cup 32a, 32b, 32c 33‧‧‧Bottom 40‧‧‧Back nozzle head 41‧‧‧Fixed shaft 42‧‧‧Annular wall 43‧‧‧Annular groove 44‧‧‧recess 45‧‧‧inclined surface 46‧‧‧Drain 47‧‧‧Drain tube 48‧‧‧Lower processing liquid nozzle 49‧‧‧Process liquid supply pipe 50‧‧‧Lower gas nozzle 51‧‧‧Gas supply pipe 52‧‧‧1st nozzle 53‧‧‧ First nozzle moving mechanism 54‧‧‧2nd nozzle 55‧‧‧Second nozzle moving mechanism 60‧‧‧Shading mechanism 61‧‧‧Shielding plate lifting mechanism 61a‧‧‧Rotating member 62‧‧‧arm 63‧‧‧Shielding board 63a‧‧‧Nozzle opening 64‧‧‧Rotating mechanism of shielding plate 64a‧‧‧rotating body 64b‧‧‧Body 64c‧‧‧Motor Department 64d‧‧‧Connecting board 64e‧‧‧bearing 64f‧‧‧Opening 64g‧‧‧Projection 64h‧‧‧coil 64i‧‧‧Permanent magnet 65‧‧‧Shielding plate retaining mechanism 65a‧‧‧Connecting pin 66‧‧‧Process liquid introduction 67‧‧‧Process liquid supply nozzle 68‧‧‧ nozzle outlet 70‧‧‧Gas supply port 71‧‧‧Gas inlet 73‧‧‧Gas supply nozzle G‧‧‧gas L, S, P‧‧‧ processing fluid Q, R‧‧‧ Central axis T1‧‧‧Standby position T2‧‧‧Process liquid supply position T3‧‧‧ Drying position W‧‧‧Substrate

圖1...顯示與第1實施形態相關之基板處理裝置之概略構成的平面圖。Fig. 1... A plan view showing a schematic configuration of the substrate processing apparatus according to the first embodiment.

圖2...與第1實施形態相關之處理室之概略構成的圖。Fig. 2... A diagram showing a schematic configuration of the processing chamber according to the first embodiment.

圖3...顯示與第1實施形態相關之遮蔽板之構成的截面圖。Fig. 3... A cross-sectional view showing the configuration of the shielding plate according to the first embodiment.

圖4(a)~(i)...顯示與第1實施形態相關之一連串處理動作的圖。4(a) to (i)... A diagram showing a series of processing operations related to the first embodiment.

圖5(a)~(e)...顯示與第2實施形態相關之處理動作的圖。Figures 5(a) to (e)... are diagrams showing processing operations related to the second embodiment.

圖6(a)~(e)...顯示與第3實施形態相關之處理動作的圖。6(a) to (e)... A diagram showing processing operations related to the third embodiment.

1‧‧‧基板處理裝置 1‧‧‧Substrate processing device

2‧‧‧基板收納箱 2‧‧‧Substrate storage box

3‧‧‧載置台 3‧‧‧Placing table

4、7‧‧‧搬運機器人 4, 7‧‧‧ handling robot

5、8‧‧‧搬運導軌 5, 8‧‧‧Hand rail

6‧‧‧緩衝台 6‧‧‧Buffer table

9‧‧‧處理室 9‧‧‧Processing room

10‧‧‧附帶單元 10‧‧‧With unit

10a‧‧‧氣液供給單元 10a‧‧‧gas liquid supply unit

10b‧‧‧控制單元 10b‧‧‧Control unit

W‧‧‧基板 W‧‧‧Substrate

Claims (10)

一種基板處理裝置，是令基板旋轉而進行清洗處理之基板處理裝置，包含：處理室，前述處理室具有：軸轉保持機構，將基板保持；處理液供給噴嘴，朝被保持在前述軸轉保持機構的前述基板供給處理液；及遮蔽板，與前述軸轉保持機構所保持之前述基板對向配置，移動於相對前述基板接近離開方向；遮蔽板旋轉機構，令前述遮蔽板旋轉；遮蔽板昇降機構，令前述遮蔽板昇降；及控制裝置，控制前述遮蔽板旋轉機構及前述遮蔽板昇降機構；前述控制裝置在未供給前述處理液時，令前述遮蔽板定位到待機位置，由前述處理液供給噴嘴供給前述處理液中是在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉，前述待機位置是比前述軸轉保持機構之保持前述基板的位置還要上方，且在前述基板被搬入前述處理室時不會妨礙前述基板之搬入的位置。 A substrate processing apparatus is a substrate processing apparatus that rotates a substrate to perform a cleaning process, and includes: a processing chamber, the processing chamber includes: an axis rotation holding mechanism to hold a substrate; a processing liquid supply nozzle is held toward the axis held by the axis The mechanism supplies the processing liquid to the substrate; and the shielding plate is arranged opposite to the substrate held by the pivoting holding mechanism and moves in a direction away from the substrate; the shielding plate rotating mechanism rotates the shielding plate; the shielding plate moves up and down A mechanism to raise and lower the shielding plate; and a control device to control the shielding plate rotating mechanism and the shielding plate lifting mechanism; the control device to position the shielding plate to a standby position when the processing liquid is not supplied, to be supplied by the processing liquid When the nozzle is supplying the processing liquid, the shielding plate is rotated without moving the shielding plate from the standby position. The standby position is higher than the position of the pivoting holding mechanism holding the substrate, and When the substrate is carried into the processing chamber, it does not interfere with the position where the substrate is carried. 如請求項1之基板處理裝置，其中前述遮蔽板具有朝前述基板供給氣體之氣體供給噴嘴；且前述控制裝置在進行利用前述處理液之前述基板之處理之期間，從前述氣體供給噴嘴吐出前述氣體。 The substrate processing apparatus according to claim 1, wherein the shielding plate has a gas supply nozzle for supplying gas to the substrate; and the control device discharges the gas from the gas supply nozzle during the processing of the substrate using the processing liquid . 如請求項2之基板處理裝置，其中前述控制裝置在使前述基板乾燥時，令前述遮蔽板定位到乾燥處 理位置，前述乾燥處理位置是比前述待機位置還下方，且接近前述軸轉保持機構之保持前述基板的位置，從前述氣體供給噴嘴吐出之前述氣體的流量為：相較於令前述遮蔽板定位到前述待機位置而從前述氣體供給噴嘴吐出之前述氣體的流量，使前述乾燥處理位置的流量增加。 The substrate processing apparatus according to claim 2, wherein the control device positions the shielding plate to a drying place when drying the substrate Treatment position, the drying treatment position is lower than the standby position, and is closer to the position of the pivot holding mechanism holding the substrate, and the flow rate of the gas discharged from the gas supply nozzle is as compared to positioning the shielding plate The flow rate of the gas discharged from the gas supply nozzle to the standby position increases the flow rate of the drying processing position. 如請求項1之基板處理裝置，其中設有朝前述基板之背面分別供給前述處理液與氣體之背面噴嘴頭；在從前述處理室搬出前述基板後，藉由前述背面噴嘴頭而朝前述遮蔽板分別供給前述處理液與前述氣體。 The substrate processing apparatus according to claim 1, wherein a back nozzle head for supplying the processing liquid and gas to the back surface of the substrate is provided; after the substrate is carried out from the processing chamber, the back nozzle head is directed toward the shielding plate The processing liquid and the gas are supplied separately. 如請求項1之基板處理裝置，其中前述處理液供給噴嘴在前述基板從前述處理室被搬出後，往前述遮蔽板之周緣供給前述處理液。 The substrate processing apparatus according to claim 1, wherein the processing liquid supply nozzle supplies the processing liquid to the periphery of the shielding plate after the substrate is carried out from the processing chamber. 一種基板處理裝置，是令基板旋轉而進行清洗處理之基板處理裝置，包含：處理室，前述處理室具有：軸轉保持機構，將基板保持；處理液供給噴嘴，朝前述基板供給處理液；遮蔽板，與前述軸轉保持機構所保持之前述基板對向配置，移動於相對前述基板接近離開方向；及背面噴嘴頭，朝前述基板之背面分別供給前述處理液與氣體；遮蔽板旋轉機構，令前述遮蔽板旋轉；遮蔽板昇降機構，令前述遮蔽板昇降；及控制裝置，控制前述遮蔽板旋轉機構及前述遮蔽板昇降機構； 前述控制裝置是在未供給前述處理液時，令前述遮蔽板定位到待機位置，前述待機位置是比前述軸轉保持機構之保持前述基板的位置還要上方，且在前述基板被搬入前述處理室時不會妨礙前述基板之搬入的位置，由前述處理液供給噴嘴供給前述處理液中是每當達到事先設定之第1設定片數，則控制前述遮蔽板旋轉機構在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉，每當達到事先設定之第2設定片數，則控制成在從前述處理室搬出前述基板後，藉由前述背面噴嘴頭而朝前述遮蔽板分別供給前述處理液與前述氣體，每當達到事先設定之第3設定片數，則控制成在從前述處理室搬出前述基板後，利用前述處理液供給噴嘴往前述遮蔽板之周緣供給前述處理液。 A substrate processing apparatus is a substrate processing apparatus that rotates a substrate to perform a cleaning process, and includes: a processing chamber, the processing chamber having: a pivoting holding mechanism to hold the substrate; a processing liquid supply nozzle to supply the processing liquid to the substrate; shielding The plate is arranged opposite to the substrate held by the pivoting holding mechanism, and moves in a direction away from the substrate; and the back nozzle head supplies the processing liquid and the gas to the back of the substrate respectively; the plate rotation mechanism is shielded so that The shielding plate rotates; the shielding plate lifting mechanism moves the shielding plate up and down; and the control device controls the shielding plate rotating mechanism and the shielding plate lifting mechanism; The control device positions the shielding plate to a standby position when the processing liquid is not supplied, the standby position is higher than a position of the pivoting holding mechanism to hold the substrate, and the substrate is carried into the processing chamber Does not hinder the position where the substrate is carried in. When the processing liquid is supplied from the processing liquid supply nozzle to the first set number of times, the shielding plate rotating mechanism is controlled before the shielding plate is removed from the When the standby position is moved, the shielding plate is rotated, and whenever the preset second set number is reached, it is controlled to be supplied to the shielding plate by the back nozzle head after the substrate is removed from the processing chamber. The processing liquid and the gas are controlled to supply the processing liquid to the periphery of the shielding plate using the processing liquid supply nozzle after the substrate is carried out from the processing chamber each time the predetermined third set number is reached. 一種基板處理方法，是在處理室內令基板旋轉而進行清洗處理之基板處理方法，包含：將前述基板搬入、搬出前述處理室之步驟；基板保持步驟，將被搬入前述處理室之前述基板保持在軸轉保持機構；及處理液供給步驟，從處理液供給噴嘴將處理液朝前述被保持之前述基板供給；且前述基板處理方法具有：遮蔽板旋轉步驟，在未供給前述處理液時，令遮蔽板定位到待機位置，前述待機位置是比前述軸轉保持機構之保持前述基板的位置還要上方，且在前述基板被搬入前述處理室時不會妨礙前述基板 之搬入的位置，由前述處理液供給噴嘴供給前述處理液中是在未令前述遮蔽板從前述待機位置移動之下，令前述遮蔽板旋轉。 A substrate processing method is a substrate processing method that rotates a substrate in a processing chamber to perform a cleaning process, and includes: a step of carrying the substrate into and out of the processing chamber; a substrate holding step of holding the substrate carried into the processing chamber at A pivoting holding mechanism; and a processing liquid supply step of supplying the processing liquid from the processing liquid supply nozzle to the substrate being held; and the substrate processing method includes: a shielding plate rotating step that causes shielding when the processing liquid is not supplied The board is positioned to a standby position, which is higher than the position of the pivot holding mechanism to hold the substrate, and does not interfere with the substrate when the substrate is carried into the processing chamber When the processing liquid is supplied from the processing liquid supply nozzle to the loading position, the shielding plate is rotated without moving the shielding plate from the standby position. 如請求項7之基板處理方法，其中在前述處理液供給步驟中，從前述遮蔽板往前述基板供給氣體。 The substrate processing method according to claim 7, wherein in the processing liquid supply step, gas is supplied from the shielding plate to the substrate. 如請求項7之基板處理方法，具有：遮蔽板清洗步驟，在從前述處理室搬出前述基板後，往前述遮蔽板分別供給前述處理液與氣體。 The substrate processing method according to claim 7 includes a shield plate cleaning step, and after the substrate is carried out from the processing chamber, the processing liquid and the gas are supplied to the shield plate, respectively. 如請求項9之基板處理方法，其中前述遮蔽板清洗步驟是往前述遮蔽板之周緣供給前述處理液。 The substrate processing method according to claim 9, wherein the shielding plate cleaning step is to supply the processing liquid to the periphery of the shielding plate.
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