TW202422733A - Substrate processing device and substrate processing method - Google Patents

Abstract

[課題]提供減少附著於基板的微粒之技術。 [解決手段]基板處理裝置具備第1基板保持部、杯體、處理液供給部和處理槽。上述第1基板保持部係吸附基板之下面中心部而水平地保持上述基板。上述杯體係朝上下雙方向開放的環狀，包圍以上述第1基板保持部被保持的上述基板之外周。上述處理液供給部係對以上述杯體包圍的上述基板供給處理液。上述處理槽係回收從上述杯體落下的上述處理液。上述處理槽之內壁面具有側面和底面，上述底面之至少一部分為親水面。 [Topic] Provide a technology for reducing particles attached to a substrate. [Solution] A substrate processing device includes a first substrate holding portion, a cup body, a processing liquid supply portion, and a processing tank. The first substrate holding portion horizontally holds the substrate by adsorbing the center portion of the bottom of the substrate. The cup body is a ring open in both vertical directions, surrounding the outer periphery of the substrate held by the first substrate holding portion. The processing liquid supply portion supplies processing liquid to the substrate surrounded by the cup body. The processing tank recovers the processing liquid dropped from the cup body. The inner wall surface of the processing tank has a side surface and a bottom surface, and at least a portion of the bottom surface is a hydrophilic surface.

Description

基板處理裝置及基板處理方法Substrate processing device and substrate processing method

本揭示係關於基板處理裝置及基板處理方法。The present disclosure relates to a substrate processing apparatus and a substrate processing method.

專利文獻1所載的基板處理裝置具備兩個吸附墊、液承接杯、旋轉夾具、框體、第1洗淨部、第2洗淨部。兩個吸附墊係水平地吸附保持基板之下面。液承接杯與兩個吸附墊連結。旋轉夾具係水平地吸附保持從吸附墊接取到的基板之下面。框體具有上面開口的開口部。在框體之底部，設置排出洗淨液的排液管，和將氣流予以排氣的排氣管。第1洗淨部係洗淨基板之上面。第2洗淨部係洗淨基板之下面。 [先前技術文獻] [專利文獻] The substrate processing device described in Patent Document 1 includes two adsorption pads, a liquid receiving cup, a rotary clamp, a frame, a first cleaning section, and a second cleaning section. The two adsorption pads horizontally adsorb and hold the bottom of the substrate. The liquid receiving cup is connected to the two adsorption pads. The rotary clamp horizontally adsorbs and holds the bottom of the substrate received from the adsorption pad. The frame has an opening portion with an opening on the top. At the bottom of the frame, a drain pipe for discharging the cleaning liquid and an exhaust pipe for exhausting the airflow are provided. The first cleaning section cleans the top of the substrate. The second cleaning section cleans the bottom of the substrate. [Prior Technical Document] [Patent Document]

[專利文獻1]日本特開2020-43156號公報[Patent Document 1] Japanese Patent Application Publication No. 2020-43156

[發明所欲解決之課題][The problem that the invention wants to solve]

本揭示之一態樣係提供減少附著於基板的微粒之技術。 [用以解決課題之手段] One aspect of the present disclosure is to provide a technique for reducing particles attached to a substrate. [Means for solving the problem]

本揭示之一態樣所涉及的基板處理裝置具備第1基板保持部、杯體、處理液供給部和處理槽。上述第1基板保持部係吸附基板之下面中心部而水平地保持上述基板。上述杯體係朝上下雙方向開放的環狀，包圍以上述第1基板保持部被保持的上述基板之外周。上述處理液供給部係對以上述杯體包圍的上述基板供給處理液。上述處理槽係回收從上述杯體落下的上述處理液。上述處理槽之內壁面具有側面和底面，上述底面之至少一部分為親水面。 [發明之效果] The substrate processing device involved in one aspect of the present disclosure comprises a first substrate holding part, a cup body, a processing liquid supply part and a processing tank. The first substrate holding part holds the substrate horizontally by adsorbing the center part of the bottom of the substrate. The cup body is a ring open in both up and down directions, surrounding the outer periphery of the substrate held by the first substrate holding part. The processing liquid supply part supplies processing liquid to the substrate surrounded by the cup body. The processing tank recovers the processing liquid dropped from the cup body. The inner wall surface of the processing tank has a side surface and a bottom surface, and at least a part of the bottom surface is a hydrophilic surface. [Effect of the invention]

若藉由本揭示之一態樣時，可以減少附著於基板的微粒。By using one aspect of the present disclosure, the number of particles attached to the substrate can be reduced.

以下，針對本揭示之實施型態參照圖面予以說明。另外，在各圖面中，對於相同或對應之構成，賦予相同的符號，省略說明。在本說明書中，X軸方向、Y軸方向、Z軸方向為彼此垂直的方向。X軸方向及Y軸方向為水平方向，Z軸方向為垂直方向。Hereinafter, the embodiments of the present disclosure will be described with reference to the drawings. In addition, in each drawing, the same symbols are given to the same or corresponding components, and the description is omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are directions perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

參照圖1～圖6，針對基板處理裝置1之一例予以說明。基板處理裝置1係以處理液對基板W進行處理。基板W係例如半導體基板或玻璃基板。半導體基板係矽晶圓或化合物半導體晶圓等。即使在基板W之下面及上面之至少一個，事先形成裝置亦可。裝置包含半導體元件、電路或端子等。Referring to FIG. 1 to FIG. 6 , an example of a substrate processing device 1 is described. The substrate processing device 1 processes a substrate W with a processing liquid. The substrate W is, for example, a semiconductor substrate or a glass substrate. The semiconductor substrate is a silicon wafer or a compound semiconductor wafer. Even at least one of the bottom and the top of the substrate W may be formed with a device in advance. The device includes a semiconductor element, a circuit or a terminal, etc.

基板處理裝置1主要如圖2所示般，例如具備第1基板保持部11、第2基板保持部12、旋轉驅動部13、杯體20、杯體移動部25(參照圖1)、處理液供給部30、處理槽40、排液管45、排氣管46、排氣管蓋47、摩擦體50、摩擦體移動部55和控制部90(參照圖1)。The substrate processing device 1 is mainly as shown in Figure 2, for example, it has a first substrate holding part 11, a second substrate holding part 12, a rotation driving part 13, a cup body 20, a cup body moving part 25 (refer to Figure 1), a processing liquid supply part 30, a processing tank 40, a drain pipe 45, an exhaust pipe 46, an exhaust pipe cover 47, a friction body 50, a friction body moving part 55 and a control part 90 (refer to Figure 1).

第1基板保持部11係吸附基板W之下面中心部而水平地保持基板W。第1基板保持部11係例如旋轉夾具，藉由旋轉驅動部13而被旋轉驅動。第1基板保持部11係以垂直的旋轉中心線為中心而被旋轉。即使第1基板保持部11能在Z軸方向移動亦可。The first substrate holding part 11 holds the substrate W horizontally by adsorbing the center of the bottom surface of the substrate W. The first substrate holding part 11 is, for example, a rotating fixture, and is rotationally driven by the rotation driving part 13. The first substrate holding part 11 is rotated around a vertical rotation center line. The first substrate holding part 11 may be movable in the Z-axis direction.

在第1基板保持部11之周圍配置中繼構件14。中繼構件14具有例如複數根的升降銷141，複數根之升降銷141係以等間隔被配置在第1基板保持部11之圓周方向。中繼構件14係藉由在第1基板保持部11之周圍升降，在第1基板保持部11或第2基板保持12，和無圖示之搬運臂之間收授基板W。The relay member 14 is arranged around the first substrate holding portion 11. The relay member 14 has, for example, a plurality of lifting pins 141, which are arranged at equal intervals in the circumferential direction of the first substrate holding portion 11. The relay member 14 is raised and lowered around the first substrate holding portion 11 to receive and deliver the substrate W between the first substrate holding portion 11 or the second substrate holding portion 12 and a transfer arm (not shown).

再者，在第1基板保持部11之周圍配置氣體吐出環15。氣體吐出環15係包圍第1基板保持部11，朝向基板W之下面，形成環狀的氣簾。氣簾係限制處理液從其外側進入至內側，保護第1基板保持部11。氣簾也保護中繼構件14。Furthermore, a gas discharge ring 15 is disposed around the first substrate holding portion 11. The gas discharge ring 15 surrounds the first substrate holding portion 11 and forms a ring-shaped air curtain toward the bottom of the substrate W. The air curtain restricts the processing liquid from entering from the outside to the inside, thereby protecting the first substrate holding portion 11. The air curtain also protects the relay member 14.

第2基板保持部12係如圖3及圖4所示般，吸附基板W之下面外周部，水平地保持基板W。第2基板保持部12係包含在X軸方向隔著間隔而被配置的一對吸附墊121、122。一對吸附墊121、122係在X軸方向夾著第1基板保持部11而被配置。第2基板保持部12係與杯體20連結，能夠與杯體20一起在水平方向(Y軸方向)及垂直方向移動。As shown in FIG. 3 and FIG. 4 , the second substrate holding portion 12 adsorbs the outer peripheral portion of the bottom surface of the substrate W to horizontally hold the substrate W. The second substrate holding portion 12 includes a pair of adsorption pads 121 and 122 arranged at intervals in the X-axis direction. The pair of adsorption pads 121 and 122 are arranged to sandwich the first substrate holding portion 11 in the X-axis direction. The second substrate holding portion 12 is connected to the cup body 20 and can move in the horizontal direction (Y-axis direction) and the vertical direction together with the cup body 20.

杯體20係朝上下雙方向開放的環狀，包圍以第1基板保持部11或第2基板保持部12被保持的基板W之外周。杯體20具有圓筒狀之垂直壁21、從圓筒狀之垂直壁21之上端突出至徑向內側的上壁22。杯體20承接供給至基板W的處理液。The cup body 20 is annular and open in both vertical directions, and surrounds the outer periphery of the substrate W held by the first substrate holding portion 11 or the second substrate holding portion 12. The cup body 20 has a cylindrical vertical wall 21 and an upper wall 22 protruding radially inward from the upper end of the cylindrical vertical wall 21. The cup body 20 receives the processing liquid supplied to the substrate W.

杯體移動部25係在處理槽40之內部，使杯體20在水平方向(Y軸方向)移動。第2基板保持部12與杯體20一起在水平方向移動。從上方觀看，處理槽40之側面42係包圍杯體20之移動範圍全體，杯體20在處理槽40之內部於水平方向移動。即使杯體移動部25使杯體20在垂直方向移動亦可。The cup body moving part 25 moves the cup body 20 in the horizontal direction (Y-axis direction) inside the processing tank 40. The second substrate holding part 12 moves in the horizontal direction together with the cup body 20. When viewed from above, the side surface 42 of the processing tank 40 surrounds the entire moving range of the cup body 20, and the cup body 20 moves in the horizontal direction inside the processing tank 40. Even if the cup body moving part 25 moves the cup body 20 in the vertical direction, it is also possible.

處理液供給部30係對以杯體20包圍的基板W供給處理液。處理液包含例如藥液和沖洗液。不特別限定藥液，例如SC1(氨和過氧化氫和水的混合液)等。藥液除了除去附著於基板W之髒汙的洗淨液之外，即使為蝕刻液或剝離液亦可。沖洗液為例如DIW(去離子水)。即使藥液和沖洗液依此順序對基板W供給亦可。The processing liquid supply unit 30 supplies the processing liquid to the substrate W surrounded by the cup body 20. The processing liquid includes, for example, a chemical solution and a rinse liquid. The chemical solution is not particularly limited, and examples thereof include SC1 (a mixture of ammonia, hydrogen peroxide, and water). The chemical solution may be a cleaning solution for removing dirt attached to the substrate W, or an etching solution or a stripping solution. The rinse liquid is, for example, DIW (deionized water). The chemical solution and the rinse liquid may be supplied to the substrate W in this order.

處理液供給部30具有對基板W之下面供給處理液的下噴嘴31、32(參照圖1及圖3)。下噴嘴31、32分別經由無圖示的配管被連接於處理液之供給源。在配管之中途設置閥體和流量控制器。當閥體開放配管之流路時，處理液從下噴嘴31、32被吐出。其吐出量係藉由流量控制器被控制。另一方面，當閥體封閉配管之流路時，處理液之吐出被停止。The processing liquid supply unit 30 has lower nozzles 31 and 32 for supplying processing liquid to the bottom of the substrate W (refer to Figures 1 and 3). The lower nozzles 31 and 32 are connected to the processing liquid supply source via unillustrated pipes. A valve body and a flow controller are provided in the middle of the pipe. When the valve body opens the flow path of the pipe, the processing liquid is ejected from the lower nozzles 31 and 32. The ejection amount is controlled by the flow controller. On the other hand, when the valve body closes the flow path of the pipe, the ejection of the processing liquid is stopped.

處理液供給部30具有對基板W之上面供給處理液的上噴嘴33(參照圖2)。上噴嘴33與下噴嘴31、32同樣經由無圖示的配管被連接於處理液之供給源。即使上噴嘴33為二流體噴嘴亦可，即使以N ₂氣體等的氣體粉碎處理液，使成為微粒化而予以噴射亦可。 The processing liquid supply unit 30 has an upper nozzle 33 (see FIG. 2 ) for supplying the processing liquid to the upper surface of the substrate W. The upper nozzle 33 is connected to a processing liquid supply source through a pipe (not shown) similarly to the lower nozzles 31 and 32. The upper nozzle 33 may be a two-fluid nozzle, or the processing liquid may be pulverized by a gas such as _N2 gas and atomized and then sprayed.

處理液供給部30具有使上噴嘴33在水平方向和垂直方向移動的噴嘴移動部34。噴嘴移動部34係在對以杯體20包圍的基板W供給處理液之位置(參照圖2)，和將上噴嘴33之吐出口收容在噴嘴匯流排35之位置(參照圖4)之間使上噴嘴33移動。The processing liquid supply unit 30 has a nozzle moving unit 34 for moving the upper nozzle 33 in the horizontal direction and the vertical direction. The nozzle moving unit 34 moves the upper nozzle 33 between a position for supplying the processing liquid to the substrate W surrounded by the cup body 20 (see FIG. 2 ) and a position for accommodating the discharge port of the upper nozzle 33 in the nozzle bus 35 (see FIG. 4 ).

噴嘴匯流排35也被稱為虛擬分配埠。將要從上噴嘴33對基板W供給處理液之前，藉由對噴嘴匯流排35吐出儲存於上噴嘴33之舊的處理液(例如，溫度下降的處理液)，可以對基板W供給新的處理液(例如溫度被控制在期望的溫度的處理液)。在噴嘴匯流排35之底壁設置排出管。排出管係使儲存於噴嘴匯流排35之內部的處理液排出至處理槽40之內部。排出管係被垂直設置。處理液係藉由重力在排出管之內部落下。排出管之下端配置在較處理槽40之底面43更上方。The nozzle bus 35 is also called a virtual distribution port. Before supplying the processing liquid to the substrate W from the upper nozzle 33, new processing liquid (for example, processing liquid whose temperature is controlled to be a desired temperature) can be supplied to the substrate W by spitting out the old processing liquid (for example, processing liquid whose temperature has dropped) stored in the upper nozzle 33 through the nozzle bus 35. A discharge pipe is provided on the bottom wall of the nozzle bus 35. The discharge pipe discharges the processing liquid stored in the nozzle bus 35 into the processing tank 40. The discharge pipe is arranged vertically. The processing liquid falls inside the discharge pipe by gravity. The lower end of the discharge pipe is arranged above the bottom surface 43 of the processing tank 40.

處理槽40回收從杯體20落下的處理液。處理槽40係例如上方被開放的箱形狀。處理槽40之內壁面41具有側面42和底面43。底面43具有排出處理液之排出口44。在排出口44設置有排液管45。排液管45係將處理液從處理槽40之內部排出至外部。在處理槽40之底面43，除排液管45之外，設置排氣管46。The processing tank 40 recovers the processing liquid dropped from the cup body 20. The processing tank 40 is, for example, in the shape of a box with an open top. The inner wall surface 41 of the processing tank 40 has a side surface 42 and a bottom surface 43. The bottom surface 43 has a discharge port 44 for discharging the processing liquid. A drain pipe 45 is provided at the discharge port 44. The drain pipe 45 discharges the processing liquid from the inside of the processing tank 40 to the outside. In addition to the drain pipe 45, an exhaust pipe 46 is provided at the bottom surface 43 of the processing tank 40.

排氣管46係將氣體從處理槽40之內部排出至外部。排氣管46係從處理槽40之底面43突出至上方。在排氣管46之上方係被排氣管蓋47覆蓋。排氣管蓋47係抑制處理液之液滴進入至排氣管46之情形。排氣管蓋47係被設置在構成第2基板保持部12之一對的吸附墊121、122之下方。The exhaust pipe 46 exhausts gas from the inside of the processing tank 40 to the outside. The exhaust pipe 46 protrudes upward from the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is covered by an exhaust pipe cover 47. The exhaust pipe cover 47 suppresses droplets of the processing liquid from entering the exhaust pipe 46. The exhaust pipe cover 47 is provided below a pair of adsorption pads 121 and 122 constituting the second substrate holding portion 12.

摩擦體50係摩擦基板W之下面。摩擦體50係刷具或海綿。摩擦體50為例如圓柱狀，摩擦體50之上面被配置成水平。摩擦體50之上面小於基板W之下面。The rubbing body 50 rubs the lower surface of the substrate W. The rubbing body 50 is a brush or a sponge. The rubbing body 50 is, for example, cylindrical, and the upper surface of the rubbing body 50 is arranged horizontally. The upper surface of the rubbing body 50 is smaller than the lower surface of the substrate W.

摩擦體50係藉由旋轉馬達51被旋轉。旋轉馬達51係被設置在臂體53之一端。在臂體53之另一端設置摩擦體移動部55。摩擦體移動部55係經由臂體53而使摩擦體50在水平方向和垂直方向移動。The friction body 50 is rotated by a rotary motor 51. The rotary motor 51 is provided at one end of an arm 53. A friction body moving part 55 is provided at the other end of the arm 53. The friction body moving part 55 moves the friction body 50 in the horizontal direction and the vertical direction via the arm 53.

控制部90係例如電腦，如圖1所示般，具備CPU(Central Processing Unit)91和記憶體等之記憶媒體92。在記憶媒體92儲存控制在基板處理裝置1中被實行之各種處理的程式。控制部90係藉由使CPU91實行被記憶於記憶媒體92之程式，控制基板處理裝置1之動作。The control unit 90 is, for example, a computer, and as shown in FIG1 , includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores a program for controlling various processes performed in the substrate processing apparatus 1. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the program stored in the storage medium 92.

接著，參照圖7，針對使用基板處理裝置1之基板處理方法之一例予以說明。如圖7所示般，基板處理方法係具有步驟S101～S106。步驟S101～S106係在控制部90所致的控制下被實施。Next, an example of a substrate processing method using the substrate processing apparatus 1 will be described with reference to FIG7 . As shown in FIG7 , the substrate processing method includes steps S101 to S106 . Steps S101 to S106 are performed under the control of the control unit 90 .

步驟S101包含將基板W從基板處理裝置1之外部搬入至內部之步驟。首先，無圖示之搬運臂將基板W搬運至杯體20之上方，在杯體20之上方待機。此時，從上方觀看，如圖1所示般，基板W之中心、第1基板保持部11之中心和杯體20之中心重疊。接著，中繼構件14上升，中繼構件14從無圖示之搬運臂抬起基板W(參照圖5)。接著，當搬運臂從基板處理裝置1退出時，杯體20被上升，同時中繼構件14被下降，中繼構件14將基板W轉接至第2基板保持部12(參照圖6)。接著，第2基板保持部12吸附基板W之下面外周部。Step S101 includes the step of moving the substrate W from the outside to the inside of the substrate processing device 1. First, the unillustrated transfer arm transfers the substrate W to the top of the cup body 20 and waits on the top of the cup body 20. At this time, as shown in Figure 1, the center of the substrate W, the center of the first substrate holding part 11 and the center of the cup body 20 overlap when viewed from above. Then, the relay member 14 rises, and the relay member 14 lifts the substrate W from the unillustrated transfer arm (refer to Figure 5). Then, when the transfer arm withdraws from the substrate processing device 1, the cup body 20 is raised, and the relay member 14 is lowered at the same time, and the relay member 14 transfers the substrate W to the second substrate holding part 12 (refer to Figure 6). Then, the second substrate holding part 12 adsorbs the lower peripheral portion of the substrate W.

步驟S102包含在藉由第2基板保持部12吸附基板W之下面外周部之狀態，洗淨基板W之下面中心部之步驟(參照圖4)。下噴嘴31、32係對基板W之下面供給處理液，同時摩擦體移動部55係一面將摩擦體50按壓至基板W之下面中心部，一面使其在水平方向移動。再者，杯體移動部25係使第2基板保持部12與杯體20一起在水平方向移動。另外，摩擦體50之移動方向係與杯體20之移動方向交叉的方向。Step S102 includes a step of cleaning the center of the bottom surface of the substrate W while the second substrate holding portion 12 adsorbs the outer peripheral portion of the bottom surface of the substrate W (see FIG. 4 ). The lower nozzles 31 and 32 supply the processing liquid to the bottom surface of the substrate W, and the friction body moving portion 55 presses the friction body 50 to the center of the bottom surface of the substrate W while moving it in the horizontal direction. Furthermore, the cup body moving portion 25 moves the second substrate holding portion 12 together with the cup body 20 in the horizontal direction. In addition, the moving direction of the friction body 50 is a direction intersecting with the moving direction of the cup body 20.

步驟S103包含將基板W從第2基板保持部12更換至第1基板保持部11之步驟。首先，從上方觀看，如圖1所示般，杯體20在水平方向移動至基板W之中心、第1基板保持部11之中心和杯體20之中心重疊的位置。之後，藉由杯體移動部25使杯體20下降，第2基板保持部12將基板W轉交至第1基板保持部11。第2基板保持部12係解除基板W之下面外周部之吸附，同時第1基板保持部11吸附基板W之下面中心部。Step S103 includes the step of replacing the substrate W from the second substrate holding part 12 to the first substrate holding part 11. First, as shown in FIG1 , the cup body 20 is moved horizontally to a position where the center of the substrate W, the center of the first substrate holding part 11, and the center of the cup body 20 overlap when viewed from above. Thereafter, the cup body 20 is lowered by the cup body moving part 25, and the second substrate holding part 12 transfers the substrate W to the first substrate holding part 11. The second substrate holding part 12 releases the adsorption of the lower peripheral portion of the substrate W, while the first substrate holding part 11 adsorbs the lower central portion of the substrate W.

步驟S104包含在藉由第1基板保持部11吸附基板W之下面中心部之狀態，洗淨基板W之下面外周部之步驟(參照圖2)。下噴嘴31、32係對基板W之下面供給處理液，同時摩擦體移動部55係一面將摩擦體50按壓至基板W之下面外周部，一面使其在水平方向移動。再者，旋轉驅動部13係使基板W與第1基板保持部11一起旋轉。Step S104 includes a step of cleaning the outer peripheral portion of the lower surface of the substrate W while the first substrate holding portion 11 adsorbs the lower center portion of the substrate W (see FIG. 2 ). The lower nozzles 31 and 32 supply the processing liquid to the lower surface of the substrate W, while the friction body moving portion 55 presses the friction body 50 to the outer peripheral portion of the lower surface of the substrate W while moving it in the horizontal direction. Furthermore, the rotation drive portion 13 rotates the substrate W together with the first substrate holding portion 11.

另外，旋轉驅動部13係於使基板W與第1基板保持部11一起旋轉之期間，進行基板W之上面的洗淨。例如，上噴嘴33係對基板W之上面供給處理液。即使上噴嘴33對基板W之上面中心部供給處理液亦可，即使朝基板W之徑向移動，對整個基板W之徑向全體供給處理液亦可。再者，即使無圖示之第2摩擦體摩擦基板W之上面亦可。而且，即使無圖示之第3摩擦體摩擦基板W之斜面亦可。In addition, the rotary drive unit 13 cleans the top surface of the substrate W while rotating the substrate W together with the first substrate holding unit 11. For example, the upper nozzle 33 supplies the processing liquid to the top surface of the substrate W. The upper nozzle 33 may supply the processing liquid to the center of the top surface of the substrate W, or may move radially of the substrate W to supply the processing liquid to the entire radial surface of the substrate W. Furthermore, the top surface of the substrate W may be rubbed by a second friction body not shown in the figure. Furthermore, the inclined surface of the substrate W may be rubbed by a third friction body not shown in the figure.

步驟S105包含使基板W乾燥的步驟。例如，藉由旋轉驅動部13以高速使第1基板保持部11旋轉，甩掉附著於基板W之處理液。Step S105 includes a step of drying the substrate W. For example, the processing liquid adhering to the substrate W is shaken off by rotating the first substrate holding portion 11 at a high speed by the rotary drive portion 13.

步驟S106包含將基板W從基板處理裝置1之內部搬出至外部之步驟。首先，第1基板保持部11解除基板W之吸附，同時中繼構件14被上升，中繼構件14從第1基板保持部11抬起基板W。接著，搬運臂係從基板處理裝置1之外部進入至內部，在杯體20之上方待機。接著，中繼構件14被下降，中繼構件14係將基板W轉交至搬運臂。之後，搬運臂係保持基板W而從基板處理裝置1退出。Step S106 includes the step of moving the substrate W from the inside of the substrate processing device 1 to the outside. First, the first substrate holding portion 11 releases the adsorption of the substrate W, and at the same time, the relay member 14 is raised, and the relay member 14 lifts the substrate W from the first substrate holding portion 11. Then, the transfer arm enters from the outside of the substrate processing device 1 to the inside, and waits above the cup body 20. Then, the relay member 14 is lowered, and the relay member 14 transfers the substrate W to the transfer arm. After that, the transfer arm holds the substrate W and exits from the substrate processing device 1.

以往，有藉由基板W之處理在基板W附著微粒之情形，基板W之潔淨度不足。In the past, particles may be attached to the substrate W due to processing of the substrate W, and the cleanliness of the substrate W may be insufficient.

本案發明者係調查基板W之潔淨度不足之原因，找出藉由處理液從杯體20落下所產生的衝擊，包含微粒之霧氣從杯體20之下方揚起之情形。而且，確認出藉由實施將杯體20之下方保持潔淨之步驟，和緩和藉由處理液之落下而產生的衝擊之步驟中之至少一方，可以減少附著於基板W之微粒。再者，確認出為了將杯體20之下方保持潔淨，除去殘留在處理槽40之底面43的液滴之情形極為重要。殘留在底面43之液滴包含微粒之情形，可想像其液滴作為霧氣而揚起。The inventors of this case investigated the cause of insufficient cleanliness of the substrate W and found that the impact caused by the treatment liquid falling from the cup body 20 caused the mist containing particles to rise from the bottom of the cup body 20. Moreover, it was confirmed that by implementing at least one of the steps of keeping the bottom of the cup body 20 clean and the step of alleviating the impact caused by the falling of the treatment liquid, the particles attached to the substrate W can be reduced. Furthermore, it was confirmed that in order to keep the bottom of the cup body 20 clean, it is extremely important to remove the droplets remaining on the bottom surface 43 of the processing tank 40. In the case where the droplets remaining on the bottom surface 43 contain particles, it can be imagined that the droplets are lifted as mist.

處理槽40之內壁面41具有側面42和底面43，底面43之至少一部為親水面。在本說明書中，親水面係在20℃的水之接觸角為60ﾟ以下之表面的情形。親水面係藉由例如親水性塗佈膜之形成或粗面化而獲得。使用一般的親水性塗佈劑。粗面化包含噴砂處理、電漿處理或蝕刻處理。The inner wall surface 41 of the processing tank 40 has a side surface 42 and a bottom surface 43, and at least a portion of the bottom surface 43 is a hydrophilic surface. In this specification, a hydrophilic surface is a surface whose contact angle with water at 20°C is less than 60°. The hydrophilic surface is obtained by, for example, forming a hydrophilic coating film or roughening the surface. A general hydrophilic coating agent is used. Roughening includes sandblasting, plasma treatment, or etching treatment.

若處理槽40之底面43之至少一部分為親水面時，處理液之液滴容易沿著底面43而流動。因此，容易除去殘留在處理槽40之底面43的液滴。依此，可以抑制包含微粒之霧氣從杯體20之下方揚起之情形，可以減少附著於基板W之微粒。以底面43之全體為親水面為佳。If at least a portion of the bottom surface 43 of the processing tank 40 is a hydrophilic surface, the droplets of the processing liquid can easily flow along the bottom surface 43. Therefore, it is easy to remove the droplets remaining on the bottom surface 43 of the processing tank 40. In this way, it is possible to suppress the mist containing particles from rising from the bottom of the cup body 20, and reduce the particles attached to the substrate W. It is preferred that the entire bottom surface 43 is a hydrophilic surface.

不僅處理槽40之底面43，處理液之液滴附著之面為親水面為佳。例如，以處理槽40之側面42之至少一部分為親水面為佳。再者，以構成第2基板保持部12之一對吸附墊121、122、排氣管蓋47、摩擦體50之臂體53、摩擦體移動部55之框體，或保持上噴嘴33之無圖示的臂體中之至少一部分為親水面為佳。It is preferred that not only the bottom surface 43 of the processing tank 40 but also the surface to which the droplets of the processing liquid adhere is a hydrophilic surface. For example, it is preferred that at least a portion of the side surface 42 of the processing tank 40 is a hydrophilic surface. Furthermore, it is preferred that at least a portion of a pair of adsorption pads 121, 122 constituting the second substrate holding portion 12, the exhaust pipe cover 47, the arm body 53 of the friction body 50, the frame of the friction body moving portion 55, or the arm body (not shown) holding the upper nozzle 33 is a hydrophilic surface.

處理槽40之底面43具有排出處理液的排出口44，具有藉由重力將擱在底面43之上的處理液導引至排出口44的傾斜面431、432。傾斜面431、432係夾著排出口44而被配置，朝彼此相反方向傾斜。可以藉由傾斜面431、432除去殘留在處理槽40之底面43的液滴。另外，即使在排出口44之單側設置水平面亦可。The bottom surface 43 of the processing tank 40 has a discharge port 44 for discharging the processing liquid, and has inclined surfaces 431 and 432 for guiding the processing liquid held on the bottom surface 43 to the discharge port 44 by gravity. The inclined surfaces 431 and 432 are arranged to sandwich the discharge port 44 and are inclined in opposite directions. The inclined surfaces 431 and 432 can remove the liquid droplets remaining on the bottom surface 43 of the processing tank 40. In addition, a horizontal surface may be provided on one side of the discharge port 44.

另外，即使摩擦體50之臂體53等之處理液的液滴附著的面藉由汽缸或馬達等而傾斜亦可。再者，液滴之除去不被限定於利用傾斜面。例如，即使利用氣體噴嘴或氣刀所致的氣體之吐出、或吸引噴嘴所致的液滴之吸引等，除去液滴亦可。In addition, even if the surface of the arm body 53 of the friction body 50, etc., to which the droplets of the processing liquid adhere, is inclined by a cylinder or a motor, etc., it is also possible. Furthermore, the removal of the droplets is not limited to using the inclined surface. For example, the droplets can be removed by using the gas ejection caused by the gas nozzle or the air knife, or the suction of the droplets by the suction nozzle, etc.

即使基板處理裝置1具備緩衝構件60亦可。緩衝構件60係被設置在杯體20之下方，緩和從杯體20落下至處理槽40之處理液的衝擊。藉由緩和由於處理液之落下產生的衝擊，可以抑制霧氣從杯體20之下方揚起之情形，可以減少附著於基板W的微粒。The substrate processing apparatus 1 may be provided with a buffer member 60. The buffer member 60 is disposed below the cup body 20 to buffer the impact of the processing liquid falling from the cup body 20 to the processing tank 40. By buffering the impact caused by the falling of the processing liquid, mist can be suppressed from rising from the bottom of the cup body 20, and particles attached to the substrate W can be reduced.

緩衝構件60包含例如海綿等的多孔質體或網孔。即使緩衝構件60在整個杯體20之內周全體被設置成環狀亦可，即使被選擇性地設置在液滴容易彈跳之處亦可。即使緩衝構件60在處理槽40之內部與杯體20一起移動亦可，即使固定於處理槽40之內部亦可。The buffer member 60 includes a porous body or mesh such as a sponge. The buffer member 60 may be provided in a ring shape throughout the inner periphery of the entire cup body 20, or may be selectively provided at a location where the droplets are likely to bounce. The buffer member 60 may move together with the cup body 20 within the processing tank 40, or may be fixed within the processing tank 40.

即使基板處理裝置1如圖8所示般具備閥體48亦可。閥體48係被設置在排液管45，開關排液管45。即使控制部90進行關閉閥體48而在處理槽40之內部儲存處理液，接著，開啟閥體48而將處理液從處理槽40之內部排出至外部的控制亦可。藉由該控制，可以沖洗附著於處理槽40之底面43的微粒。The substrate processing apparatus 1 may be provided with a valve body 48 as shown in FIG8 . The valve body 48 is provided in the drain pipe 45 to open and close the drain pipe 45. The control unit 90 may close the valve body 48 to store the processing liquid in the processing tank 40, and then open the valve body 48 to discharge the processing liquid from the inside of the processing tank 40 to the outside. By this control, particles attached to the bottom surface 43 of the processing tank 40 can be washed away.

在處理槽40之內部儲存處理液，接著排出儲存的處理液之控制，係例如在一基板W從基板處理裝置1之內部被搬出至外部之後，另外的基板W從基板處理裝置1之外部被搬入至內部之前被進行。即是，該控制係在第1基板保持部11及第2基板保持部12皆不保持基板W之狀態下被進行。The control of storing the processing liquid in the processing tank 40 and then discharging the stored processing liquid is performed, for example, after one substrate W is carried out from the inside of the substrate processing apparatus 1 to the outside and before another substrate W is carried in from the outside of the substrate processing apparatus 1 to the inside. That is, the control is performed in a state where neither the first substrate holding portion 11 nor the second substrate holding portion 12 holds the substrate W.

另外，即使該控制使用無圖示的洗淨用基板而洗淨杯體20之時被進行亦可。即是，該控制即使在第1基板保持部11或第2基板保持部12保持洗淨用基板之狀態下被進行亦可。洗淨用基板具有應洗淨杯體20之寬廣範圍，具有與基板W不同的形狀。In addition, this control may be performed even when the cup body 20 is cleaned using a cleaning substrate not shown. That is, this control may be performed even when the cleaning substrate is held by the first substrate holding portion 11 or the second substrate holding portion 12. The cleaning substrate has a wide range of the cup body 20 to be cleaned and has a shape different from that of the substrate W.

控制部90係進行從上噴嘴33經由噴嘴匯流排35而對處理槽40供給處理液的控制。該控制係於關閉例如閥體48而在處理槽40之內部儲存處理液之時被進行。可以使用既存的設備而儲存處理液。另外，即使該控制在開啟閥體48之狀態下進行亦可，即使在例如後述第1掃除部71或第2掃除部73摩擦處理槽40之底面43之時被進行亦可。作為儲存在處理槽40之內部的處理液，雖然使用DIW，但是也能夠使用SC1等的藥液。The control unit 90 controls the supply of the treatment liquid to the treatment tank 40 from the upper nozzle 33 via the nozzle bus 35. This control is performed when, for example, the valve body 48 is closed and the treatment liquid is stored inside the treatment tank 40. The treatment liquid can be stored using existing equipment. In addition, this control may be performed with the valve body 48 open, or when, for example, the first cleaning unit 71 or the second cleaning unit 73 described later rubs the bottom surface 43 of the treatment tank 40. As the treatment liquid stored inside the treatment tank 40, DIW is used, but a liquid such as SC1 may also be used.

即使基板處理裝置1如圖8所示般具備洗淨噴嘴61亦可。洗淨噴嘴61係朝向處理槽40之內壁面41吐出洗淨液。洗淨噴嘴61係例如朝向內壁面41之角部49吐出洗淨液。角部49係側面42和底面43之角部、相鄰的兩個側面42之角部、或相鄰的兩個側面42和底面43構成的3個面的角部。可以藉由洗淨液洗淨殘留在角部49之處理液。即使洗淨噴嘴61朝向內壁面41之角部49以外吐出洗淨液亦可，例如即使朝向底面43之期望區域吐出洗淨液亦可。即使洗淨液與處理液相同亦可，也能夠將洗淨噴嘴61用於關閉閥體48而在處理槽40之內部儲存處理液。The substrate processing device 1 may be provided with a cleaning nozzle 61 as shown in FIG8 . The cleaning nozzle 61 discharges the cleaning liquid toward the inner wall surface 41 of the processing tank 40. The cleaning nozzle 61 discharges the cleaning liquid, for example, toward the corner 49 of the inner wall surface 41. The corner 49 is a corner of a side surface 42 and a bottom surface 43, a corner of two adjacent side surfaces 42, or a corner of three surfaces formed by two adjacent side surfaces 42 and a bottom surface 43. The processing liquid remaining in the corner 49 can be cleaned by the cleaning liquid. The cleaning nozzle 61 may discharge the cleaning liquid other than toward the corner 49 of the inner wall surface 41, for example, it may discharge the cleaning liquid toward a desired area of the bottom surface 43. Even if the cleaning liquid and the processing liquid are the same, the cleaning nozzle 61 can be used to close the valve body 48 and store the processing liquid inside the processing tank 40.

即使基板處理裝置1如圖9所示般具備第1掃除部71亦可。第1掃除部71係與杯體20一起在水平方向(Y軸方向)移動，掃除殘留在處理槽40之底面43的處理液。可以使用既存的設備即是杯體移動部25使第1掃除部71在水平方向移動。第1掃除部71為刷具或海綿等。The substrate processing apparatus 1 may be provided with the first sweeping unit 71 as shown in FIG. 9. The first sweeping unit 71 moves in the horizontal direction (Y-axis direction) together with the cup body 20 to sweep the processing liquid remaining on the bottom surface 43 of the processing tank 40. The first sweeping unit 71 may be moved in the horizontal direction using an existing device, that is, the cup body moving unit 25. The first sweeping unit 71 is a brush or a sponge.

即使基板處理裝置1具備第1升降部72亦可。第1升降部72係使第1掃除部71相對於杯體20做相對性升降。第1升降部72係可以調整第1掃除部71之高度。例如，於基板W之處理時，使第1掃除部71從處理槽40之底面43浮起，於處理槽40之洗淨時，能夠將第1掃除部71推壓至處理槽40之底面43。第1升降部72係由汽缸或馬達等構成。Even if the substrate processing device 1 is provided with the first lifting part 72, it is also acceptable. The first lifting part 72 lifts the first sweeping part 71 relative to the cup body 20. The first lifting part 72 can adjust the height of the first sweeping part 71. For example, when processing the substrate W, the first sweeping part 71 is floated from the bottom surface 43 of the processing tank 40, and when cleaning the processing tank 40, the first sweeping part 71 can be pushed to the bottom surface 43 of the processing tank 40. The first lifting part 72 is composed of a cylinder or a motor.

即使基板處理裝置1具備第2掃除部73亦可。第2掃除部73係與摩擦體50一起在水平方向移動，掃除殘留在處理槽40之底面43的處理液。可以使用既存的設備即是摩擦體移動部55使第2掃除部73在水平方向移動。第2掃除部73為刷具或海綿等。The substrate processing apparatus 1 may be provided with a second sweeping unit 73. The second sweeping unit 73 moves in the horizontal direction together with the friction body 50 to sweep the processing liquid remaining on the bottom surface 43 of the processing tank 40. The second sweeping unit 73 may be moved in the horizontal direction using an existing device, that is, the friction body moving unit 55. The second sweeping unit 73 is a brush or a sponge.

即使基板處理裝置1具備第2升降部74亦可。第2升降部74係使第2掃除部73相對於摩擦體50做相對性升降。第2升降部74係可以調整第2掃除部73之高度。例如，於基板W之處理時，使第2掃除部73從處理槽40之底面43浮起，於處理槽40之洗淨時，能夠將第2掃除部73推壓至處理槽40之底面43。第2升降部74係由汽缸或馬達等構成。Even if the substrate processing device 1 is provided with the second lifting part 74, it is also possible. The second lifting part 74 makes the second sweeping part 73 relatively lift up and down relative to the friction body 50. The second lifting part 74 can adjust the height of the second sweeping part 73. For example, when processing the substrate W, the second sweeping part 73 is floated from the bottom surface 43 of the processing tank 40, and when cleaning the processing tank 40, the second sweeping part 73 can be pushed to the bottom surface 43 of the processing tank 40. The second lifting part 74 is composed of a cylinder or a motor.

即使基板處理裝置1具備第3掃除部75亦可。第3掃除部75係與杯體20一起在水平方向移動，掃除殘留在排氣管蓋47之上面的處理液。可以使用既存的設備即是杯體移動部25使第3掃除部75在水平方向移動。第3掃除部75為刷具或海綿等。The substrate processing apparatus 1 may be provided with a third sweeping unit 75. The third sweeping unit 75 moves horizontally together with the cup body 20 to sweep the processing liquid remaining on the exhaust pipe cover 47. The third sweeping unit 75 may be moved horizontally using an existing device, namely, the cup body moving unit 25. The third sweeping unit 75 is a brush or a sponge.

即使基板處理裝置1具備第3升降部76亦可。第3升降部76係使第3掃除部75相對於杯體20做相對性升降。第3升降部76係可以調整第3掃除部75之高度。例如，於基板W之處理時，使第3掃除部75從排氣管蓋47之上面浮起，於處理槽40之洗淨時，能夠將第3掃除部75推壓至排氣管蓋47之上面。第3升降部76係由汽缸或馬達等構成。Even if the substrate processing apparatus 1 is provided with the third lifting part 76, it is also possible. The third lifting part 76 makes the third sweeping part 75 relatively lift up and down with respect to the cup body 20. The third lifting part 76 can adjust the height of the third sweeping part 75. For example, when processing the substrate W, the third sweeping part 75 is floated from the exhaust pipe cover 47, and when cleaning the processing tank 40, the third sweeping part 75 can be pushed onto the exhaust pipe cover 47. The third lifting part 76 is composed of a cylinder or a motor.

另外，雖然第1掃除部71或第2掃除部73係在開啟閥體48而從處理槽40之內部排出處理液之狀態下，掃除殘留在處理槽40之底面43的處理液，但是即使藉由在關閉閥體48而在處理槽40之內部儲存處理液之狀態下，摩擦處理槽40之底面43，除去附著於其底面43的微粒亦可。In addition, although the first sweeping section 71 or the second sweeping section 73 sweeps the treatment liquid remaining on the bottom surface 43 of the treatment tank 40 when the valve body 48 is opened and the treatment liquid is discharged from the interior of the treatment tank 40, the particles attached to the bottom surface 43 of the treatment tank 40 can be removed by rubbing the bottom surface 43 of the treatment tank 40 even when the valve body 48 is closed and the treatment liquid is stored in the interior of the treatment tank 40.

同樣，雖然第3掃除部75係在開啟閥體48而從處理槽40之內部排出處理液之狀態下，掃除殘留在排氣管蓋47之上面的處理液，但是即使藉由在關閉閥體48而在處理槽40之內部儲存處理液之狀態下，摩擦排氣管蓋47之上面，除去附著於其上面的微粒亦可。Similarly, although the third sweeping section 75 sweeps the treatment liquid remaining on the exhaust pipe cover 47 when the valve body 48 is opened and the treatment liquid is discharged from the interior of the treatment tank 40, the particles attached to the exhaust pipe cover 47 can be removed by rubbing the exhaust pipe cover 47 when the valve body 48 is closed and the treatment liquid is stored in the interior of the treatment tank 40.

接著，參照圖10～圖15，針對第1基板保持部11和第2基板保持部12之變形例予以說明。第1基板保持部11係與上述實施型態相同，吸附基板W之下面中心部(參照圖12)。第1基板保持部11係由例如旋轉夾具構成。另一方面，第2基板保持部12係與上述實施型態不同，在複數處機械性地保持基板W之外周(參照圖14、圖15)。第2基板保持部12具有例如複數(例如，4個)之旋轉陀螺123。以下，針對與上述實施型態之差異點為主進行說明。Next, with reference to FIGS. 10 to 15 , variations of the first substrate holding portion 11 and the second substrate holding portion 12 will be described. The first substrate holding portion 11 is the same as the above-mentioned embodiment, and adsorbs the lower center portion of the substrate W (refer to FIG. 12 ). The first substrate holding portion 11 is composed of, for example, a rotating clamp. On the other hand, the second substrate holding portion 12 is different from the above-mentioned embodiment, and mechanically holds the outer periphery of the substrate W at a plurality of locations (refer to FIGS. 14 and 15 ). The second substrate holding portion 12 has, for example, a plurality of (for example, 4) rotating gyroscopes 123. The following description will focus on the differences from the above-mentioned embodiment.

旋轉陀螺123係由水平圓盤構成。在其圓盤之外周面在整個圓周方向全體形成楔狀的溝。楔狀的溝係在上下方向夾持基板W之外周而予以保持。旋轉陀螺123係被設置在一對臂部124之各者。The spinning top 123 is formed of a horizontal disk. A wedge-shaped groove is formed on the outer circumference of the disk in the entire circumferential direction. The wedge-shaped groove clamps the outer circumference of the substrate W in the vertical direction to hold it. The spinning top 123 is provided on each of the pair of arms 124.

一對臂部124係夾著基板W而被配置，在彼此接近或間隔開之方向移動。作為使一對臂部124移動的機構，使用例如馬達或汽缸。The pair of arms 124 are arranged to sandwich the substrate W and move in a direction of approaching or separating from each other. As a mechanism for moving the pair of arms 124, for example, a motor or a cylinder is used.

藉由使一對臂部124彼此接近，複數旋轉陀螺123在各者的溝於上下方向夾著基板W之外周並予以保持。在該狀態下，藉由使複數旋轉陀螺123之各者自轉，可以使基板W旋轉。之後，若停止基板W之旋轉，使一對臂部124彼此間隔開時，複數旋轉陀螺123所致的基板W之機械性保持則被解除。By bringing the pair of arms 124 closer to each other, the plurality of spinning gyros 123 clamp the outer periphery of the substrate W in the vertical direction at the grooves of the plurality of spinning gyros 123 and hold it. In this state, the substrate W can be rotated by rotating each of the plurality of spinning gyros 123. Thereafter, if the rotation of the substrate W is stopped and the pair of arms 124 are spaced apart from each other, the mechanical holding of the substrate W by the plurality of spinning gyros 123 is released.

接著，再次參照圖10～圖15，針對使用本變形例所涉及之第1基板保持部11和第2基板保持部12的基板處理方法(圖7所示的步驟S101～S106)予以說明。Next, referring again to FIGS. 10 to 15 , the substrate processing method (steps S101 to S106 shown in FIG. 7 ) using the first substrate holding portion 11 and the second substrate holding portion 12 according to the present modification will be described.

在步驟S101中，基板W被搬入。首先，如圖11所示般，複數根(例如，3根)的升降銷141從無圖示之搬運臂接取基板W。升降銷141係***通於在上下方向貫通第1基板保持部11的貫通孔，在較第1基板保持部11更上方接取基板W。In step S101, a substrate W is carried in. First, as shown in FIG11 , a plurality of (for example, three) lift pins 141 receive the substrate W from a transfer arm (not shown). The lift pins 141 are inserted into through holes that penetrate the first substrate holding portion 11 in the vertical direction, and receive the substrate W above the first substrate holding portion 11.

接著，如圖12所示般，使升降銷141下降，基板W從升降銷141被收授至第1基板保持部11。此時，若基板W被載置於第1基板保持部11上即可，可不被吸附於第1基板保持部11。12 , the lift pins 141 are lowered, and the substrate W is received from the lift pins 141 to the first substrate holding portion 11 . At this time, the substrate W only needs to be placed on the first substrate holding portion 11 , and does not need to be sucked by the first substrate holding portion 11 .

接著，如圖13所示般，藉由一對臂部124彼此接近，複數旋轉陀螺123在各者的溝於上下方向夾著基板W之外周並予以保持。之後，第1基板保持部11被下降，基板W從第1基板保持部11被收授至第2基板保持部12。13 , the pair of arms 124 approach each other, and the plurality of spinning tops 123 vertically clamp and hold the outer periphery of the substrate W in the grooves of the respective arms 124. Thereafter, the first substrate holding part 11 is lowered, and the substrate W is transferred from the first substrate holding part 11 to the second substrate holding part 12.

在步驟S102中，如圖14及圖15所示般，第2基板保持部12係在複數處機械性地保持基板W之外周的狀態，摩擦體50被推壓至基板W之下面中心部，洗淨基板W之下面中心部。In step S102, as shown in FIG. 14 and FIG. 15, the second substrate holding portion 12 mechanically holds the outer periphery of the substrate W at a plurality of locations, and the friction body 50 is pushed to the center of the bottom surface of the substrate W to clean the center of the bottom surface of the substrate W.

在步驟S102中，藉由複數旋轉陀螺123之各者自轉，基板W被旋轉。再者，在步驟S102中，摩擦體50係一面自轉，一面在水平方向被移動。依此，可以洗淨寬廣範圍。In step S102, the substrate W is rotated by each of the plurality of rotating gyros 123. Furthermore, in step S102, the friction body 50 is moved in the horizontal direction while rotating. In this way, a wide range can be cleaned.

另外，雖然第2基板保持部12於從第1基板保持部11接取到基板W之後，在水平方向不移動，但是即使如圖16所示般在水平方向移動亦可。後者之情況，因在基板W之下面中心部之正下方不存在第1基板保持部11及升降銷141，但是容易以摩擦體50洗淨基板W之下面中心部。In addition, although the second substrate holding part 12 does not move in the horizontal direction after receiving the substrate W from the first substrate holding part 11, it may move in the horizontal direction as shown in FIG16. In the latter case, since the first substrate holding part 11 and the lifting pins 141 are not present directly below the center of the bottom surface of the substrate W, the center of the bottom surface of the substrate W can be easily cleaned by the friction body 50.

在步驟S103中，基板W從第2基板保持部12被收授至第1基板保持部11。具體而言，首先，如圖13所示般，第1基板保持部11被上升，第1基板保持部11吸附基板W之下面中心部。接著，如圖12所示般，一對臂部124在彼此間隔開之方向被移動，複數旋轉陀螺123所致的基板W之機械性保持被解除。In step S103, the substrate W is transferred from the second substrate holding portion 12 to the first substrate holding portion 11. Specifically, first, as shown in FIG13 , the first substrate holding portion 11 is raised, and the first substrate holding portion 11 adsorbs the center portion of the lower surface of the substrate W. Then, as shown in FIG12 , the pair of arms 124 are moved in directions spaced apart from each other, and the mechanical holding of the substrate W by the plurality of rotating gyroscopes 123 is released.

在步驟S104中，在第1基板保持部11吸附基板W之下面中心部之狀態下，摩擦體50被推壓至基板W之下面外周部，洗淨基板W之下面外周部。此時，藉由第1基板保持部11被旋轉驅動，基板W被旋轉。再者，在摩擦體50係一面自轉，一面在水平方向被移動。In step S104, while the first substrate holding part 11 is adsorbing the center of the bottom surface of the substrate W, the friction body 50 is pushed to the outer peripheral portion of the bottom surface of the substrate W to clean the outer peripheral portion of the bottom surface of the substrate W. At this time, the first substrate holding part 11 is driven to rotate, and the substrate W is rotated. Furthermore, the friction body 50 is moved in the horizontal direction while rotating.

在步驟S105中，基板W被乾燥。例如，第1基板保持部11係以高速被旋轉，附著於基板W之處理液被甩掉。在步驟S106中，基板W被搬出。In step S105, the substrate W is dried. For example, the first substrate holding portion 11 is rotated at a high speed, and the processing liquid attached to the substrate W is shaken off. In step S106, the substrate W is carried out.

以上，雖然針對本揭示所涉及之基板處理裝置及基板處理方法之實施型態予以說明，但是本揭示不被限定於上述實施型態等。在專利申請範圍所載的範疇內，能進行各種變更、修正、置換、附加、削除及組合。即使針對該些，當然也屬於本揭示之技術性範圍。Although the above is a description of the implementation of the substrate processing device and substrate processing method involved in the present disclosure, the present disclosure is not limited to the above implementation, etc. Various changes, modifications, replacements, additions, deletions and combinations can be made within the scope of the patent application. Even for these, of course, they also belong to the technical scope of the present disclosure.

1:基板處理裝置 11:第1基板保持部 12:第2基板保持部 20:杯體 30:處理液供給部 40:處理槽 41:內壁面 42:側面 43:底面 W:基板 1: Substrate processing device 11: First substrate holding portion 12: Second substrate holding portion 20: Cup body 30: Processing liquid supply portion 40: Processing tank 41: Inner wall surface 42: Side surface 43: Bottom surface W: Substrate

[圖1]為表示一實施型態所涉及之基板處理裝置之俯視圖，為表示圖7之步驟S104之一例的俯視圖。 [圖2]為表示圖7之步驟S104之一例的剖面圖。 [圖3]為表示圖7之步驟S102之一例的俯視圖。 [圖4]為表示圖7之步驟S102之一例的剖面圖。 [圖5]係表示中繼構件之動作之一例的剖面圖。 [圖6]係接續於圖5表示中繼構件之動作之一例的剖面圖。 [圖7]係表示與一實施型態所涉及之基板處理方法的流程圖。 [圖8]係表示處理槽之洗淨處理之一例的剖面圖。 [圖9]係表示處理槽之洗淨處理之另一例的剖面圖。 [圖10]為表示第1基板保持部和第2基板保持部之變形例的俯視圖。 [圖11]為表示圖10所示的升降銷接取基板之動作之一例的側視圖。 [圖12]為在圖11之處理之後進行的基板從升降銷收授至第1基板保持部之一例的側視圖。 [圖13]為在圖12之處理之後進行的基板從第1基板保持部收授至第2基板保持部之一例的側視圖。 [圖14]係表示於圖13之處理之後進行的基板之下面中心部之洗淨之一例的側視圖。 [圖15]為圖14之俯視圖。 [圖16]係表示於圖13之處理之後進行的基板之下面中心部之洗淨之變形例的側視圖。 [FIG. 1] is a top view of a substrate processing apparatus according to an embodiment, and is a top view of an example of step S104 of FIG. 7. [FIG. 2] is a cross-sectional view of an example of step S104 of FIG. 7. [FIG. 3] is a top view of an example of step S102 of FIG. 7. [FIG. 4] is a cross-sectional view of an example of step S102 of FIG. 7. [FIG. 5] is a cross-sectional view of an example of the operation of a relay component. [FIG. 6] is a cross-sectional view of an example of the operation of a relay component following FIG. 5. [FIG. 7] is a flow chart of a substrate processing method according to an embodiment. [FIG. 8] is a cross-sectional view of an example of a cleaning process of a processing tank. [FIG. 9] is a cross-sectional view of another example of a cleaning process of a processing tank. [Fig. 10] is a top view showing a modified example of the first substrate holding part and the second substrate holding part. [Fig. 11] is a side view showing an example of the action of the lift pin shown in Fig. 10 to receive the substrate. [Fig. 12] is a side view showing an example of the substrate being received from the lift pin to the first substrate holding part after the process of Fig. 11. [Fig. 13] is a side view showing an example of the substrate being received from the first substrate holding part to the second substrate holding part after the process of Fig. 12. [Fig. 14] is a side view showing an example of cleaning the center portion of the lower surface of the substrate after the process of Fig. 13. [Fig. 15] is a top view of Fig. 14. [Fig. 16] is a side view showing a modified example of cleaning the center portion of the lower surface of the substrate after the process of Fig. 13.

1:基板處理裝置 1: Substrate processing equipment

12:第2基板保持部 12: Second substrate holding part

13:旋轉驅動部 13: Rotary drive unit

20:杯體 20: Cup body

21:垂直壁 21: Vertical wall

22:上壁 22: Upper wall

30:處理液供給部 30: Treatment fluid supply unit

33:上噴嘴 33: Upper nozzle

34:噴嘴移動部 34: Nozzle moving part

35:噴嘴匯流排 35: Nozzle manifold

40:處理槽 40: Processing tank

41:內壁面 41: Inner wall surface

42:側面 42: Side

43:底面 43: Bottom

45:排液管 45: Drain pipe

46:排氣管 46: Exhaust pipe

47:排氣管蓋 47: Exhaust pipe cover

48:閥體 48: Valve body

49:角部 49: Corner

50:摩擦體 50: Friction body

51:旋轉馬達 51: Rotary motor

53:臂體 53: Arms and body

55:摩擦體移動部 55: Friction body moving part

60:緩衝構件 60: Buffer components

61:洗淨噴嘴 61: Clean the nozzle

71:第1掃除部 71: 1st Cleaning Department

72:第1升降部 72: The first lifting section

73:第2掃除部 73: Second Cleaning Division

74:第2升降部 74: Second lifting section

75:第3掃除部 75: The 3rd Cleaning Division

76:第3升降部 76: Elevator Section 3

121:吸附墊 121: Adsorption pad

431:傾斜面 431: Inclined surface

432:傾斜面 432: Inclined surface

Claims (18)

一種基板處理裝置，具備： 第1基板保持部，其係吸附基板之下面中心部而水平地保持上述基板； 杯體，其係朝上下雙方向開放的環狀，包圍以上述第1基板保持部被保持的上述基板之外周； 處理液供給部，其係對以上述杯體包圍的上述基板供給處理液；及 處理槽，其係回收從上述杯體落下的上述處理液， 上述處理槽之內壁面具有側面和底面，上述底面之至少一部分為親水面。 A substrate processing device comprises: a first substrate holding part, which absorbs the lower center of the substrate to horizontally hold the substrate; a cup body, which is annular and open in both vertical directions, surrounding the outer periphery of the substrate held by the first substrate holding part; a processing liquid supply part, which supplies processing liquid to the substrate surrounded by the cup body; and a processing tank, which recovers the processing liquid dropped from the cup body, the inner wall surface of the processing tank has a side surface and a bottom surface, and at least a part of the bottom surface is a hydrophilic surface. 如請求項1之基板處理裝置，其中 在上述杯體之下方，具備緩衝構件，該緩衝構件係緩和從上述杯體落下至上述處理槽之上述處理液之衝擊。 A substrate processing device as claimed in claim 1, wherein a buffer member is provided below the cup body, and the buffer member is used to buffer the impact of the processing liquid falling from the cup body to the processing tank. 如請求項1之基板處理裝置，其中 具備： 排液管，其係將上述處理液從上述處理槽之內部排出至外部； 閥體，其係被設置在上述排液管；及 控制部，其係控制上述閥體， 上述控制部係關閉上述閥體而在上述處理槽之內部儲存上述處理液，接著，開啟上述閥體而將上述處理液從上述處理槽之內部排出至外部的控制。 The substrate processing device of claim 1, wherein it is provided with: a drain pipe for discharging the processing liquid from the inside of the processing tank to the outside; a valve body, which is arranged in the drain pipe; and a control unit for controlling the valve body, the control unit closes the valve body to store the processing liquid in the processing tank, and then opens the valve body to discharge the processing liquid from the inside of the processing tank to the outside. 如請求項1之基板處理裝置，其中 上述處理液供給部具有：噴嘴，其係吐出上述處理液，和噴嘴移動部，其係使上述噴嘴在水平方向和垂直方向移動， 上述噴嘴移動部係使上述噴嘴在對以上述杯體包圍的上述基板供給上述處理液之位置，和將上述噴嘴之吐出口收容在噴嘴匯流排之位置之間移動， 上述基板處理裝置具備控制部，該控制部係進行從上述噴嘴經由上述噴嘴匯流排而對上述處理槽供給上述處理液的控制。 A substrate processing device as claimed in claim 1, wherein the processing liquid supply unit comprises: a nozzle for discharging the processing liquid, and a nozzle moving unit for moving the nozzle in the horizontal direction and the vertical direction, the nozzle moving unit moves the nozzle between a position for supplying the processing liquid to the substrate surrounded by the cup body and a position for accommodating the discharge port of the nozzle in the nozzle bus, and the substrate processing device is provided with a control unit for controlling the supply of the processing liquid from the nozzle via the nozzle bus to the processing tank. 如請求項1之基板處理裝置，其中 具備洗淨噴嘴，該洗淨噴嘴係對上述處理槽之上述內壁面吐出洗淨液。 A substrate processing device as claimed in claim 1, wherein a cleaning nozzle is provided, and the cleaning nozzle discharges a cleaning liquid to the inner wall surface of the processing tank. 如請求項1之基板處理裝置，其中 具備： 第2基板保持部，其係吸附上述基板之下面外周部而水平地保持上述基板；和 杯體移動部，其係使與上述第2基板保持部連結且包圍以上述第2基板保持部被保持的上述基板之外周的上述杯體，在水平方向移動， 從上方觀看，上述處理槽之上述側面包圍上述杯體之移動範圍全體， 上述處理槽之上述底面具有排出上述處理液之排出口，且具有藉由重力將擱在上述底面上的上述處理液導引至上述排出口的傾斜面。 A substrate processing device as claimed in claim 1, wherein it comprises: a second substrate holding part, which holds the substrate horizontally by adsorbing the lower peripheral part of the substrate; and a cup body moving part, which moves the cup body connected to the second substrate holding part and surrounding the outer periphery of the substrate held by the second substrate holding part in a horizontal direction, when viewed from above, the side surface of the processing tank surrounds the entire moving range of the cup body, the bottom surface of the processing tank has a discharge port for discharging the processing liquid, and has an inclined surface for guiding the processing liquid held on the bottom surface to the discharge port by gravity. 如請求項1之基板處理裝置，其中 具備： 第2基板保持部，其係吸附上述基板之下面外周部而水平地保持上述基板； 杯體移動部，其係使與上述第2基板保持部連結且包圍以上述第2基板保持部被保持之上述基板之外周的上述杯體在水平方向移動；及 第1掃除部，其係與上述杯體一起在水平方向移動，掃除殘留在上述處理槽之上述底面的上述處理液。 A substrate processing device as claimed in claim 1, wherein it comprises: a second substrate holding part, which sucks the lower peripheral part of the substrate to horizontally hold the substrate; a cup body moving part, which moves the cup body connected to the second substrate holding part and surrounding the outer periphery of the substrate held by the second substrate holding part in a horizontal direction; and a first sweeping part, which moves in a horizontal direction together with the cup body to sweep the processing liquid remaining on the bottom surface of the processing tank. 如請求項1之基板處理裝置，其中 具備： 摩擦體，其係在上述杯體之內部摩擦上述基板之下面； 摩擦體移動部，其係使上述摩擦體在水平方向和垂直方向移動；及 第2掃除部，其係與上述摩擦體一起在水平方向移動，掃除殘留在上述處理槽之上述底面的上述處理液。 The substrate processing device of claim 1, wherein it comprises: a friction body, which rubs the bottom of the substrate inside the cup body; a friction body moving part, which moves the friction body in the horizontal direction and the vertical direction; and a second sweeping part, which moves in the horizontal direction together with the friction body to sweep the processing liquid remaining on the bottom surface of the processing tank. 如請求項1之基板處理裝置，其中 具備： 第2基板保持部，其係吸附上述基板之下面外周部而水平地保持上述基板； 杯體移動部，其係使與上述第2基板保持部連結且包圍以上述第2基板保持部被保持之上述基板之外周的上述杯體在水平方向移動； 排氣管，其係設置在上述處理槽之上述底面； 排氣管蓋，其係覆蓋上述排氣管之上方；及 第3掃除部，其係與上述杯體一起在水平方向移動，掃除殘留在上述排氣管蓋之上面的上述處理液。 A substrate processing device as claimed in claim 1, wherein it comprises: a second substrate holding part, which absorbs the lower peripheral part of the substrate to horizontally hold the substrate; a cup body moving part, which moves the cup body connected to the second substrate holding part and surrounding the outer periphery of the substrate held by the second substrate holding part in a horizontal direction; an exhaust pipe, which is arranged on the bottom surface of the processing tank; an exhaust pipe cover, which covers the upper part of the exhaust pipe; and a third sweeping part, which moves in a horizontal direction together with the cup body to sweep the processing liquid remaining on the upper part of the exhaust pipe cover. 一種基板處理方法，具有： 吸附基板之下面中心部而以第1基板保持部水平地保持上述基板之步驟； 以朝上下兩方向開放的環狀杯體包圍以上述第1基板保持部被保持的上述基板之外周之步驟； 係對以上述杯體包圍的上述基板供給處理液之步驟；及 以處理槽回收從上述杯體落下的上述處理液之步驟， 上述處理槽之內壁面具有側面和底面，上述處理槽之上述底面之至少一部分為親水面。 A substrate processing method comprises: A step of horizontally holding the substrate by adsorbing the center portion of the bottom surface of the substrate with a first substrate holding portion; A step of surrounding the outer periphery of the substrate held by the first substrate holding portion with an annular cup body opened in both upper and lower directions; A step of supplying a processing liquid to the substrate surrounded by the cup body; and A step of recovering the processing liquid dropped from the cup body with a processing tank, The inner wall surface of the processing tank has a side surface and a bottom surface, and at least a portion of the bottom surface of the processing tank is a hydrophilic surface. 如請求項10之基板處理方法，其中 具有藉由被設置在上述杯體之下方之緩衝構件，緩和從上述杯體落下至上述處理槽之上述處理液之衝擊之步驟。 The substrate processing method of claim 10, wherein there is a step of buffering the impact of the processing liquid falling from the cup body to the processing tank by a buffer member disposed below the cup body. 如請求項10之基板處理方法，其中 具有關閉將上述處理液從上述處理槽之內部排出到外部之排液管之途中的閥體而在上述處理槽之內部儲存上述處理液，接著，開啟上述閥體而將上述處理液從上述處理槽之內部排出至外部之步驟。 The substrate processing method of claim 10, wherein there is a step of closing a valve in the drain pipe for discharging the processing liquid from the inside of the processing tank to the outside to store the processing liquid inside the processing tank, and then opening the valve to discharge the processing liquid from the inside of the processing tank to the outside. 如請求項10之基板處理方法，其中 具有使吐出上述處理液之噴嘴，在對以上述杯體包圍的上述基板供給上述處理液之位置，和將上述噴嘴之吐出口收容在噴嘴匯流排之位置之間移動的步驟；和 從上述噴嘴經由上述噴嘴匯流排對上述處理槽供給上述處理液的步驟。 A substrate processing method as claimed in claim 10, wherein there is a step of moving the nozzle for discharging the processing liquid between a position for supplying the processing liquid to the substrate surrounded by the cup body and a position for accommodating the discharge port of the nozzle in the nozzle bus; and a step of supplying the processing liquid from the nozzle to the processing tank via the nozzle bus. 如請求項10之基板處理方法，其中 具有朝向上述處理槽之上述內壁面吐出洗淨液之步驟。 A substrate processing method as claimed in claim 10, wherein it comprises a step of discharging a cleaning liquid toward the inner wall surface of the processing tank. 如請求項10之基板處理方法，其中 具有： 以吸附上述基板之下面外周部之第2基板保持部水平地保持上述基板之步驟； 以上述杯體包圍以上述第2基板保持部被保持之上述基板之外周之步驟；及 使與上述第2基板保持部連結之上述杯體在水平方向移動之步驟， 從上方觀看，上述處理槽之上述側面包圍上述杯體之移動範圍全體， 上述處理槽之上述底面具有排出上述處理液之排出口，且具有藉由重力將擱在上述底面上的上述處理液導引至上述排出口的傾斜面。 The substrate processing method of claim 10, wherein it comprises: a step of horizontally holding the substrate by the second substrate holding part that absorbs the lower peripheral part of the substrate; a step of surrounding the outer periphery of the substrate held by the second substrate holding part with the cup body; and a step of moving the cup body connected to the second substrate holding part in the horizontal direction, when viewed from above, the side surface of the processing tank surrounds the entire moving range of the cup body, the bottom surface of the processing tank has a discharge port for discharging the processing liquid, and has an inclined surface for guiding the processing liquid held on the bottom surface to the discharge port by gravity. 如請求項10之基板處理方法，其中 具有： 以吸附上述基板之下面外周部之第2基板保持部水平地保持上述基板之步驟； 以上述杯體包圍以上述第2基板保持部被保持之上述基板之外周之步驟； 使與上述第2基板保持部連結之上述杯體在水平方向移動之步驟；及 以與上述杯體一起在水平方向移動的第1掃除部掃除殘留在上述處理槽之上述底面的上述處理液之步驟。 The substrate processing method of claim 10, wherein comprises: a step of horizontally holding the substrate by the second substrate holding part that absorbs the lower peripheral part of the substrate; a step of surrounding the outer periphery of the substrate held by the second substrate holding part with the cup body; a step of moving the cup body connected to the second substrate holding part in a horizontal direction; and a step of sweeping the processing liquid remaining on the bottom surface of the processing tank with the first sweeping part that moves in a horizontal direction together with the cup body. 如請求項10之基板處理方法，其中 在上述杯體之內部藉由摩擦體摩擦上述基板之下面的步驟； 使上述摩擦體在水平方向和垂直方向移動之步驟；及 以與上述摩擦體一起在水平方向移動的第2掃除部掃除殘留在上述處理槽之上述底面的上述處理液之步驟。 A substrate processing method as claimed in claim 10, wherein a step of rubbing the bottom of the substrate with a friction body inside the cup body; a step of moving the friction body in horizontal and vertical directions; and a step of sweeping the processing liquid remaining on the bottom surface of the processing tank with a second sweeping portion that moves in the horizontal direction together with the friction body. 如請求項10之基板處理方法，其中 具有： 以吸附上述基板之下面外周部之第2基板保持部水平地保持上述基板之步驟； 以上述杯體包圍以上述第2基板保持部被保持之上述基板之外周之步驟； 使與上述第2基板保持部連結之上述杯體在水平方向移動之步驟；及 以與上述杯體一起在水平方向移動的第3掃除部，掃除殘留在覆蓋被設置在上述處理槽之上述底面之排氣管之上方的排氣管蓋之上面之上述處理液的步驟。 The substrate processing method of claim 10, wherein comprises: a step of horizontally holding the substrate by a second substrate holding portion that absorbs the outer peripheral portion of the lower surface of the substrate; a step of surrounding the outer periphery of the substrate held by the second substrate holding portion with the cup body; a step of moving the cup body connected to the second substrate holding portion in a horizontal direction; and a step of sweeping the processing liquid remaining on the exhaust pipe cover above the exhaust pipe provided on the bottom surface of the processing tank with a third sweeping portion that moves in a horizontal direction together with the cup body.

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