TWI463575B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
TWI463575B
TWI463575B TW099105578A TW99105578A TWI463575B TW I463575 B TWI463575 B TW I463575B TW 099105578 A TW099105578 A TW 099105578A TW 99105578 A TW99105578 A TW 99105578A TW I463575 B TWI463575 B TW I463575B
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TW
Taiwan
Prior art keywords
adhesive film
insulating resin
semiconductor wafer
bump
resin adhesive
Prior art date
Application number
TW099105578A
Other languages
English (en)
Other versions
TW201041055A (en
Inventor
Kazunori Hamazaki
Takashi Matsumura
Daisuke Sato
Yasuhiro Suga
Original Assignee
Dexerials Corp
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Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201041055A publication Critical patent/TW201041055A/zh
Application granted granted Critical
Publication of TWI463575B publication Critical patent/TWI463575B/zh

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    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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Description

半導體裝置之製造方法
本發明係關於一種半導體裝置之製造方法，其係透過絕緣性樹脂黏著膜將具有配置於周圍的複數個凸塊之半導體晶片覆晶構裝於基板而取得半導體裝置。
以含有導電粒子之異方性導電黏著膜(ACF)，將半導體晶片覆晶構裝於基板來製造半導體裝置之方法廣泛被使用，然而，配線間距趨於微小化，因導電粒子之粒徑與配線間距之關係，使得難以確保連接可靠性。
因此，前人提出於半導體晶片設置可細微製作的金柱凸塊(Au stud bump)，透過絕緣性樹脂黏著膜將此半導體晶片覆晶構裝於基板(專利文獻1)。透過上述之絕緣性樹脂黏著膜進行覆晶構裝時，一般而言，係將面積稍大於與半導體晶片約略相同面積的絕緣性樹脂黏著膜預黏著於基板後，使半導體晶片與配線基板對位，然後從半導體晶片側進行熱壓藉此來構裝。
專利文獻1：日本特開2008-203484號公報
然而，如專利文獻1進行覆晶構裝時，如圖5所示，會有下述問題：熔融之絕緣性樹脂黏著膜(NCF)102會從具備有凸塊100之半導體晶片101外圍溢出，溢出之樹脂會附著於熱壓接合器103，造成在熱壓時壓力變得過大而無法得到所欲品質之半導體裝置。又，亦有下述問題：熱壓後，由於無法從基板104之電極105與半導體晶片101之凸塊100間完全排除絕緣性樹脂或無機填料，故在該等之間無法形成所需之金屬接合，而造成連接可靠性大幅降低。並且，於吸濕回焊後，由於絕緣性樹脂黏著膜102露出在外，將會發生硬化不良或半導體晶片101浮起之問題，在此點上亦可能會有連接可靠性降低的問題。
本發明係欲解決以上之先前技術問題者，其目的在於提供一種製造方法，係於半導體晶片與基板使用絕緣性樹脂黏著膜來進行覆晶構裝之半導體裝置之製造方法中，在熱壓時，可防止熔融之絕緣性樹脂黏著膜溢出、以及凸塊與電極墊間存在絕緣性樹脂或無機填料，所得之半導體裝置具有充分之耐吸濕回焊性。
本發明人發現藉由將絕緣性樹脂黏著膜面積相對於半導體晶片其配置於周圍之複數個凸塊所圍成之區域面積、以及絕緣性樹脂黏著膜之最低熔融黏度分別加以設定在特定範圍，可達成上述目的，而完成本發明。
亦即，本發明提供一種製造方法，係透過絕緣性樹脂黏著膜將具有配置於周圍之複數個凸塊的半導體晶片覆晶構裝於具有與該凸塊對應之複數個電極的基板，藉此製造半導體裝置，其特徵在於，將絕緣性樹脂黏著膜預黏著於與該凸塊對應之基板之複數個電極所圍成的區域，以使該凸塊與對應於該凸塊之電極相對向的方式，來進行半導體晶片與基板之對位，藉由從半導體晶片側進行熱壓，對凸塊與電極進行金屬接合，使絕緣性樹脂黏著膜熔融，並進一步使之熱硬化，而其中該絕緣性樹脂黏著膜，具有相當於半導體晶片其周圍配置之複數個凸塊所圍成之區域面積的60～100%之大小、與2×102 ～1×105 Pa‧s之最低熔融黏度。
本發明之半導體裝置之製造方法中，將絕緣性樹脂黏著膜預黏著於與半導體晶片之複數個凸塊對應之基板的複數個電極所圍成的區域，而其中該絕緣性樹脂黏著膜，具有相當於半導體晶片其周圍配置之複數個凸塊所圍成之區域面積的至少60～100%之大小、與2×102 ～1×105 Pa‧s之最低熔融黏度。因此，剛將半導體晶片熱壓於基板後，於半導體晶片之凸塊以及與該凸塊對應之基板電極墊間，不會存在絕緣性樹脂黏著膜，且可使熔融之絕緣性樹脂黏著膜不會溢出至半導體晶片外側。並且，於熱壓時，可以較低之壓力來進行。因此，可充分地使所有的凸塊金屬接合於所對應之連接墊，亦可防止熔融之樹脂附著於熱壓接合器。又，如前所述，於熱壓後，不會產生樹脂溢出，可密封住半導體晶片之凸塊與基板電極之接合部，而可提升耐吸濕回焊性。因此，可得到連接可靠性高之半導體裝置。
參照圖式來說明本發明之半導體裝置之製造方法。
(1)首先，準備具備有凸塊1之半導體晶片2(圖1A)、具備有電極11之基板12(圖2)、以及絕緣性樹脂黏著膜(NCF)。
在半導體晶片2中，凸塊1係周圍配置於半導體晶片2之外周邊附近，亦即，配置成一列之凸塊列(圖1B)。在圖1B中，雖然為一列之凸塊列，但亦可為兩列以上之凸塊列。
雖然半導體晶片2或凸塊1並無特別限制，但凸塊1，從可確實因應間距細微化之觀點來看，可適當地利用金柱凸塊。關於上述金柱凸塊之大小，其高度較佳為35～100μm，更佳為35～70μm，特佳為35～45μm。又，其底徑較佳為10～50μm，更佳為10～40μm，特佳為10～20μm。又，凸塊間之間距，較佳為50～200μm，更佳為50～70μm。
為了防止熔融之絕緣性樹脂的溢出，半導體晶片2之外周邊與凸塊1的距離，較佳為設定在0.07～0.2mm，更佳為設定在0.1～0.15mm。
於基板12，係將電極11配置成對應於待連接之半導體晶片2之凸塊1(凸塊列)。接著，將絕緣性樹脂黏著膜(NCF)預黏著於此複數個電極所圍成之區域。
基板12、電極11並無特別限定，例如，基板12可使用剛性基板、撓性基板、剛性-撓性基板等。電極11，例如可使用將銅箔成形為凸墊狀並在表面鍍敷有Ni/Au者。
絕緣性樹脂黏著膜(NCF)，可使用將半導體晶片構裝在基板時所使用之公知的絕緣性樹脂黏著膜，例如，可列舉將環氧系硬化型樹脂組成物或丙烯酸系硬化型樹脂組成物成形為膜狀者。此等，可適當地使用熱硬化型者。
環氧系熱硬化型樹脂組成物，例如，係由在分子內具有2個以上環氧基之化合物或樹脂、環氧硬化劑、成膜成分等所組成。
於分子內具有2個以上環氧基之化合物或樹脂可為液狀，或亦可為固體狀，可例舉雙酚A型環氧樹脂或雙酚F型環氧樹脂等雙官能環氧樹脂、酚醛清漆(phenol novolac)型環氧樹脂或甲酚酚醛清漆(cresol novolac)型環氧樹脂等之酚醛清漆(novolac)型環氧樹脂等。又，亦可使用3,4-環氧環己烯甲基-3’,4’-環氧環己烯羧酸酯等脂環式環氧化合物。
環氧硬化劑，例如可列舉胺系硬化劑、咪唑系硬化劑、酸酐系硬化劑、鋶陽離子系硬化劑等。硬化劑亦可為潛在性者。
成膜成分，例如可舉出與環氧化合物或環氧樹脂相溶之苯氧基樹脂或丙烯酸樹脂。
環氧系熱固型樹脂組成物，視需要可含有公知之硬化促進劑、矽烷偶合劑、金屬捕捉劑、丁二烯橡膠等應力緩和劑、二氧化矽等無機填料、聚異氰酸酯系交聯劑、著色料、防腐劑、溶劑等。
丙烯酸系熱硬化型樹脂組成物，例如可由(甲基)丙烯酸酯單體、成膜用樹脂、二氧化矽等無機填料、矽烷偶合劑、自由基聚合起始劑等所構成。
(甲基)丙烯酸酯單體，可使用單官能(甲基)丙烯酸酯單體、多官能(甲基)丙烯酸酯單體、或在該等中導入環氧基、胺酯基、胺基、環氧乙烷基、環氧丙烷基等之變性單官能或多官能(甲基)丙烯酸酯單體。又，只要不會損及本發明之效果，可併用可與(甲基)丙烯酸酯單體進行自由基共聚合之其他單體，例如(甲基)丙烯酸、乙酸乙烯、苯乙烯、氯乙烯等。
丙烯酸系熱硬化型樹脂組成物用之成膜用樹脂，可列舉苯氧基樹脂、聚乙烯縮醛樹脂、聚乙烯丁醛樹脂、烷基化纖維素樹脂、聚酯樹脂、丙烯酸樹脂、苯乙烯樹脂、胺酯樹脂、聚對苯二甲酸乙二酯(polyethylene terephthalate)樹脂等。
自由基聚合起始劑，可列舉過氧化苯甲醯、過氧化二異丙苯、過氧化二丁醯等有機過氧化物、偶氮雙異丁腈、偶氮雙戊腈等偶氮雙系化合物。
丙烯酸系熱硬化型樹脂組成物，視需要，可含有丁二烯橡膠等應力緩和劑、乙酸乙酯等溶劑、著色料、抗氧化劑、抗老化劑等。
使該等之環氧系熱硬化型樹脂組成物或丙烯酸系熱硬化型樹脂組成物成形為絕緣性樹脂黏著膜(NCF)，可使用公知之方法來進行。
上述說明之本發明中所使用之絕緣性樹脂黏著膜(NCF)，其最低熔融黏度必須設定在2×102 ～1×105 Pa‧s，較佳為5×102 ～5×104 Pa‧s。此係由於若黏度低於此範圍時，會增加產生溢出之可能性，若為高黏度，則會增加無法密封凸塊與電極之接合部之可能性的緣故。
又，絕緣性樹脂黏著膜(NCF)之厚度，若太薄，則操作性會降低，亦無法發揮底膠(underfill)之功能，若太厚，則由於熱壓時會發生溢出，故較佳為30～70μm，更佳為35～50μm。
(2)接著，將具有2×102 ～1×105 Pa‧s之最低熔融黏度的絕緣性樹脂黏著膜(NCF)預黏著於基板12(圖3A)。該預黏著之位置，係對應於半導體晶片2其周圍配置之複數個凸塊1所圍成之區域R的內側(圖3B)。
此處，絕緣性樹脂黏著膜(NCF)之大小，係相當於半導體晶片2其周圍配置之凸塊1所圍成之區域R的面積的60～100%，較佳為70～90%。若低於60%，則會增加無法密封半導體晶片之凸塊與基板之電極的接合部的可能性，若超過100%，則有凸塊與電極間殘留無法完全排除之絕緣性樹脂或無機填料之虞，且亦無法降低熱壓條件。
預黏著之條件，較佳為以使絕緣性樹脂黏著膜不會實質硬化的條件來進行，具體而言，可舉溫度60～70℃、壓力0.25～1.0MPa、1～3秒之條件。
(3)接著，以使凸塊1與對應於該凸塊1之電極11相對向的方式，進行半導體晶片2與基板12之對位，然後從半導體晶片2側利用熱壓接合器30進行熱壓(圖4A)。此時，首先，由於凸塊1與電極11係在未透過絕緣性樹脂黏著膜下直接接觸，故於兩者間會形成金屬接合。對於絕緣性樹脂黏著膜，係使其熔融並進一步使其熱硬化。藉此可得到半導體裝置。於熱壓時，熔融之絕緣性樹脂黏著膜係向半導體晶片2之外緣擴散並硬化。雖然硬化之絕緣性樹脂黏著膜之周邊，亦可僅存在於由周圍配置之複數個凸塊1所圍成之區域內，但從可密封住凸塊1與電極11之接合部之觀點來看，如圖4B所示，較佳為存在於周圍配置之複數個凸塊1與半導體晶片2的外緣之間。
熱壓接合器30，可使用以往在覆晶構裝時所使用之熱壓接合器。
使用上述熱壓接合器30之本發明的熱壓條件，熱壓溫度較佳為120～270℃，更佳為170～200℃。壓力較佳為0.5～2.5MPa，更佳為2.0～2.5MPa。尤其，根據本發明之構成，可將熱壓時之壓力由以往之10kg/IC降低到1/3～1/5之壓力。
藉由以上所說明之本發明之製造方法所得之半導體裝置，係具有耐吸濕回焊性且顯示出優異之連接可靠性者。
實施例
以下，根據實施例具體說明本發明。另，於以下之實施例中，NCF用組成物之最低熔融黏度係利用錐狀/平板黏度計進行量測。
絕緣性樹脂黏著膜(NCF)之製造例1～5
將表1之成分均勻地混合，於該混合物中添加甲苯使固體成分濃度為60質量%，進行混合後得到NCF用組成物。將所得之組成物利用塗布棒塗布於剝離膜(索尼化學＆信息部件股份有限公司製)，在80℃之烘箱中進行乾燥，得到厚度50μm之絕緣性樹脂黏著膜(NCF)1～5。所得之NCF的最低熔融黏度(Pa‧s)使用錐狀/平板黏度計，以升溫速度10℃/min進行量測，所得之結果示於表1。另，從最低熔融黏度之觀點來看，可適用於本發明之絕緣性樹脂黏著膜係NCF 2～4。
表註：
*1　苯氧基樹脂，東都化成公司製
*2　東都化成公司製
*3　日本環氧樹脂公司製
*4　丙烯腈丁二烯橡膠粒子，日本合成橡膠公司製
*5　咪唑系潛在性硬化劑，旭化成化學公司製
*6　信越石英公司製
*7　日本艾羅西爾公司製
*8　默曼堤效能材料公司製
實施例1～7與比較例1～6
利用熱壓接合器(索尼化學＆信息部件股份有限公司製)，將剪裁成表2所示之NCF面積率的NCF1～5預黏著(溫度60℃，壓力0.5MPa，加熱加壓時間為3秒)於具有電極(於銅上鍍敷鎳/金而成者)之基板(MCL-E-679F，日立化成工業公司)之電極所圍成的區域，其中，該電極係對應於設有周圍配置之複數個Au柱凸塊(高75～85μm，間距150μm)之LSI晶片(6.3mm見方，厚0.1mm，凸塊與LSI晶片週邊之平均距離為0.1μm)的該凸塊。此處，NCF面積率係指經裁切之NCF面積相對於複數個凸塊所圍成之面積的比例。
(接合器有無附著樹脂)
使LSI晶片之凸塊面相對於預黏著有NCF之基板的電極面，進行對位後，利用8mm見方之熱壓接合器(索尼化學＆信息部件股份有限公司製)進行熱壓(正熱壓接：溫度180℃、壓力2.5MPa、加熱加壓時間為20秒)而得到半導體裝置。對所得之半導體裝置，以目視觀察於熱壓接合器有無附著樹脂。所得到之結果示於表2。
(耐吸濕、回焊性)
將半導體裝置於溫度85℃、濕度85%之條件下放置168小時，量測浸漬於最高265℃之銲料回焊爐後的導通阻抗值，未達0.13Ω評為A，0.13Ω以上、未達1.0Ω評為B，1.0Ω以上評為C。所得之結果示於表2。
(初期導通阻抗與PCT後之導通阻抗)
又，量測初期導通阻抗與PCT試驗(於121℃、濕度100%之環境下放置120小時)後之導通阻抗。所得到之結果(複數次量測結果之最大值)示於表2。另，將1Ω以上之導通阻抗的情形視為斷路(open)。實際應用上，導通阻抗以0.3Ω注意下一頁頁碼有問題以下為佳。
由表2可知，使用具有NCF面積率相當於60～100%之大小，以及2×102 ～1×105 Pa‧s之最低熔融黏度之NCF的實施例1～7之半導體基板，於熱壓時絕緣性樹脂不會溢出，在初期與PCT試驗後之各時點的導電阻抗低，實現高連接可靠性。尤其，於實施例1～3之情形，PCT試驗後之導通阻抗與初期導通阻抗相差不大，可知其耐吸濕、回焊性優異。
相對於此，於比較例1、5之情形，由於NCF之最低熔融黏度過低，於比較例4之情形，由於NCF之面積率過高，故觀察到於接合器有附著樹脂，耐吸濕、回焊性亦為「C」評價，PCT後之導通阻抗亦為「open」。且於比較例4之情形，初期導通阻抗亦為「open」。於比較例2、6之情形，由於NCF之最低熔融黏度過高，耐吸濕、回焊性為「C」評價，PCT後之導通阻抗為「open」。於比較例3之情形，由於NCF之面積率過低，故耐吸濕、回焊性為「C」評價，初期與PCT後之導通阻抗均為「open」。
(低壓壓接性評價)
除了將熱壓時之壓力設定在0.5Mpa外，分別反覆進行實施例1與2之條件的量測，並未觀察到有樹脂附著於接合器，且PCT試驗後之導通阻抗亦無變化。因此，可知本發明之製造方法適於低壓壓接。
產業上之可利用性
根據本發明之半導體裝置之製造方法，於熱壓時，可防止NCF之溢出以及凸塊與電極墊間存有絕緣性樹脂或無機填料，而可提供具有充分耐吸濕回焊性之半導體裝置。
1、100．．．凸塊
2、101．．．半導體晶片
11、105．．．電極
12、104．．．基板
30、103．．．熱壓接合器
NCF、102．．．絕緣性樹脂黏著膜
R．．．區域
圖1A，係具備有凸塊之半導體晶片的截面圖。
圖1B，係半導體晶片之凸塊側的俯視圖。
圖2，係具備有電極之基板的截面圖。
圖3A，係預黏著有絕緣性樹脂黏著膜之基板的截面圖。
圖3B，係預黏著有絕緣性樹脂黏著膜之基板其絕緣性樹脂黏著膜側的俯視圖。
圖4A，係剛利用熱壓接合器將半導體晶片熱壓於基板後的說明圖。
圖4B，係利用熱壓接合器充分地將半導體晶片熱壓於基板後的說明圖。
圖5，係先前技術之覆晶構裝的說明圖。
1．．．凸塊
2．．．半導體晶片
11．．．電極
12．．．基板
NCF．．．絕緣性樹脂黏著膜

Claims (7)

  1. 一種半導體裝置之製造方法，係透過絕緣性樹脂黏著膜將具有周圍配置之複數個凸塊的半導體晶片覆晶構裝於具有與該凸塊對應之複數個電極的基板，藉此製造半導體裝置，其特徵在於：將絕緣性樹脂黏著膜預黏著於與該凸塊對應之基板之複數個電極所圍成的區域，以使該凸塊與對應於該凸塊之電極相對向的方式，來進行半導體晶片與基板之對位，藉由從半導體晶片側進行熱壓，對凸塊與電極進行金屬接合，使絕緣性樹脂黏著膜熔融，並進一步使之熱硬化，而其中該絕緣性樹脂黏著膜，具有相當於半導體晶片其周圍配置之複數個凸塊所圍成之區域面積的60~100%之大小、與2×102 ~1×105 Pa．s之最低熔融黏度。
  2. 如申請專利範圍第1項之半導體裝置之製造方法，其中，以被覆半導體晶片其周圍配置之凸塊列所圍成之區域面積的70~90%之方式，將絕緣性樹脂黏著膜預黏著於基板。
  3. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，半導體晶片之凸塊為高35~100μm之金柱凸塊(Au stud bump)。
  4. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，絕緣性樹脂黏著膜含有環氧系硬化型樹脂組成物或丙烯酸系硬化型樹脂組成物。
  5. 如申請專利範圍第1或2項之半導體裝置之製造方 法，其中，絕緣性樹脂黏著膜之厚度為30~70μm。
  6. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，於熱壓時，熔融之絕緣性樹脂黏著膜朝半導體晶片外緣擴散，硬化後其周緣存在於周圍配置之複數個凸塊與半導體晶片的外緣之間。
  7. 如申請專利範圍第1或2項之半導體裝置之製造方法，其中，熱壓溫度為120~270℃，壓力為0.5~2.5MPa。
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