TWI459602B - 發光二極體封裝結構 - Google Patents
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- TWI459602B TWI459602B TW101100148A TW101100148A TWI459602B TW I459602 B TWI459602 B TW I459602B TW 101100148 A TW101100148 A TW 101100148A TW 101100148 A TW101100148 A TW 101100148A TW I459602 B TWI459602 B TW I459602B
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- 239000000758 substrate Substances 0.000 claims description 21
- 238000005538 encapsulation Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 239000004954 Polyphthalamide Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/85909—Post-treatment of the connector or wire bonding area
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description
本發明涉及一種半導體封裝結構,特別是指一種發光二極體封裝結構。
發光二極體做為第三代光源,具有體積小、節能環保、發光效率高等優點,得到越來越廣泛的應用。常用的發光二極體是通過藍光晶片加黃光螢光粉來得到白光,但是這樣得到的白光往往缺少較大波長的紅光部分,使得其演色性較差,即不能獲得高度物體真實顏色重現效果、而導致物體顏色失真。因此經常通過在封裝體中同時封裝補償LED晶片來提高其演色性,但是這種發光二極體封裝結構中的多個LED晶片混光的時候,由於各LED晶片發出不同波長的色光,各LED晶片的發光效率也不相同,一般來說,同樣電流下,短波長晶片的出光效率較高,而對應長波長晶片的出光效率較低,因此,往往在出光面上會產生出射光強度不均勻的問題。
有鑒於此,有必要提供一種光強均勻的高演色性發光二極體封裝結構。
一種發光二極體封裝結構,包括基板、設置於基板上的電極、與所述電極電性連接的第一發光二極體晶片和第二發光二極體晶片
以及透鏡。所述第一發光二極體晶片發出光線的波長小於所述第二發光二極體晶片發出光線的波長,所述透鏡在對應所述第二發光二極體晶片的光路上形成彙聚光線的彙聚部,在對應所述第一發光二極體晶片的光路上形成發散光線的發散部。
該發光二極體封裝結構,由於所述透鏡在對應所述第二發光二極體晶片的光路上形成彙聚光線的彙聚部,在對應所述第一發光二極體晶片的光路上形成發散光線的發散部,使得所述第二發光二極體晶片出射的光線彙聚,增加其出射強度,而所述第一發光二極體晶片出射的光線發散,降低其出射強度,因此使其出光表面各處的光強更加均勻。
10‧‧‧發光二極體封裝結構
11‧‧‧基板
111‧‧‧上表面
112‧‧‧下表面
12‧‧‧電極
13‧‧‧第一發光二極體晶片
14‧‧‧第二發光二極體晶片
15‧‧‧螢光粉
16‧‧‧封裝層
17‧‧‧透鏡
171‧‧‧彙聚部
172‧‧‧發散部
18‧‧‧反射杯
圖1是本發明實施方式提供的一種發光二極體封裝結構的出光示意圖。
圖2是圖1中發光二極體封裝結構的出光強度與出光角度的關係圖。
以下將結合附圖對本發明作進一步的詳細說明。
請參閱圖1,本發明實施方式提供的一種發光二極體封裝結構10,包括基板11、電極12、第一發光二極體晶片13、第二發光二極體晶片14、螢光粉15,封裝層16、透鏡17及反射杯18。
基板11為一矩形平板,用以承載所述電極12、第一發光二極體晶片13、第二發光二極體晶片14和封裝層16於其上。所述基板11包括上表面111和與上表面111相對且相互平行的下表面112。所述
基板11材料為PPA(Polyphthalamide,聚醋酸乙烯酯)等絕緣材料。可以理解的,所述基板11各邊的長度可以相同或不同,進一步的,所述基板11的形狀並不限於矩形,其形狀還可以為圓形等。
電極12形成於所述基板11的表面,該電極12至少為兩個,且每個電極12之間相互電絕緣。所述電極12分別自所述基板11的上表面111延伸至下表面112。所述電極12所用的材料為導電性能較好的金屬材料,如金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。
第一發光二極體晶片13和第二發光二極體晶片14貼設於所述電極12上。所述第一發光二極體晶片13和第二發光二極體晶片14通過金屬導線與所述電極12分別電性連接。所述第二發光二極體晶片14設置於所述發光二極體封裝結構10的中心,所述第一發光二極體晶片13的數量為多個並圍繞該第二發光二極體晶片14設置,且所述第一發光二極體晶片13和第二發光二極體晶片14之間採用串聯連接的方式,使該電路配置簡單並簡化制程,而且容易控制線路中的電流。可以理解的,所述第一發光二極體晶片13和第二發光二極體晶片14也可以採用覆晶或共晶的方式固定於基板11表面的電極12上並與所述電極12電連接。本實施例中所用的第一發光二極體晶片13發出波長大於450nm且小於550nm的藍綠光。所述第二發光二極體晶片14發出波長大於570nm的紅光。所述第一發光二極體晶片13表面還覆蓋有螢光粉15,所述第一發光二極體晶片13發出的部分光線激發螢光粉15產生白光。本實施例中所用的螢光顆粒141為黃色螢光粉。
封裝層16形成於所述基板11的上表面111上,覆蓋所述電極12位於所述上表面111的部分,並包覆所述第一發光二極體晶片13和第二發光二極體晶片14。所述封裝層16由封裝膠固化形成。
透鏡17覆蓋於所述封裝層16的外側表面。所述透鏡17包括圓弧狀的彙聚部171和發散部172,所述彙聚部171位於對應所述第二發光二極體晶片14正上方的位置,而所述發散部172位於對應所述第一發光二極體晶片13正上方的位置。由於所述第一發光二極體晶片13為短波長晶片,其發光效率較高,而所述第二發光二極體晶片14為長波長晶片,其發光效率較低。所述彙聚部171彙聚所述第二發光二極體晶片14出射的光線,加強該第二發光二極體晶片14上方的出射光強,而所述發散部172發散所述第一發光二極體晶片13出射的光線,減弱所述第一發光二極體晶片13上方的出射光強,因此使該發光二極體封裝結構10出光表面各處的光強更加均勻,同時由於發光二極體封裝結構10本身尺寸較小,因此也使得該發光二極體封裝結構10的混光更加均勻。如圖2所示,左邊兩條實線部分為左邊的第一發光二極體晶片13出射的光線被分散減弱後的出光強度曲線,虛線部分為第二發光二極體晶片14出射的光線被彙聚加強後的出光強度曲線,右邊兩條實線部分為右邊的第一發光二極體晶片13出射的光線被分散減弱後的出光強度曲線。
反射杯18環繞所述封裝層16和透鏡17,並設於所述上表面111上的電極12的週邊部分,用於反射所述第一發光二極體晶片13和第二發光二極體晶片14所發出的光線。所述反射杯18可採用PPA等材料製成。可以理解的,所述反射杯18也可以僅環繞所述封裝層
16設置,所述透鏡17設於所述封裝層16和所述反射杯18的上表面。
本發明實施方式提供的發光二極體封裝結構10,由於所述透鏡17在對應所述第二發光二極體晶片14的光路上形成彙聚光線的彙聚部171,在對應所述第一發光二極體晶片13的光路上形成發散光線的發散部172,使得所述第二發光二極體晶片14出射的光線彙聚,增加其出射強度,而所述第一發光二極體晶片13出射的光線發散,降低其出射強度,因此使其出光表面各處的光強更加均勻。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
10‧‧‧發光二極體封裝結構
11‧‧‧基板
111‧‧‧上表面
112‧‧‧下表面
12‧‧‧電極
13‧‧‧第一發光二極體晶片
14‧‧‧第二發光二極體晶片
15‧‧‧螢光粉
16‧‧‧封裝層
17‧‧‧透鏡
171‧‧‧彙聚部
172‧‧‧發散部
18‧‧‧反射杯
Claims (11)
- 一種發光二極體封裝結構,包括基板、設置於基板上的電極、與所述電極電性連接的第一發光二極體晶片和第二發光二極體晶片以及透鏡,其改進在於,所述第一發光二極體晶片發出光線的波長小於所述第二發光二極體晶片發出光線的波長,所述透鏡在對應所述第二發光二極體晶片的光路上形成彙聚光線的彙聚部,在對應所述第一發光二極體晶片的光路上形成發散光線的發散部。
- 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述透鏡包括一靠近基板的入光面和一遠離基板的出光面,所述入光面為一平面,所述出光面對應所述第二發光二極體晶片的聚光部為一凸起,對應所述第一發光二極體晶片的發散部為一凹陷。
- 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述第一發光二極體晶片和第二發光二極體晶片之間採用串聯連接的方式。
- 如申請專利範圍第1項所述的發光二極體封裝結構,其中:所述第一發光二極體晶片為藍光LED晶片,其發出波長大於450nm且小於550nm的藍綠光。
- 如申請專利範圍第4項所述的發光二極體封裝結構,其中:所述第二發光二極體晶片為紅光LED晶片,其發出波長大於570nm的紅光。
- 如申請專利範圍第5項所述的發光二極體封裝結構,其中:還包括覆蓋第一發光二極體晶片的黃色螢光粉。
- 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構,其中:第二發光二極體晶片位於基板中部,第一發光二極體晶片位於第二發光二極體晶片附近。
- 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構,其中:第一發光二極體晶片的數量為多個,且環繞第二發光二極體設置。
- 如申請專利範圍第1項至第6項任一項所述的發光二極體封裝結構,其中:還包括有反射杯,反射杯環繞所述第一發光二極體晶片和第二發光二極體晶片設置。
- 如申請專利範圍第9項所述的發光二極體封裝結構,其中:還包括設置於反射杯內的封裝層,所述透鏡設於所述封裝層和所述反射杯的上表面。
- 如申請專利範圍第9項所述的發光二極體封裝結構,其中:還包括設置於反射杯內的封裝層,所述反射杯環繞所述封裝層及所述透鏡設置。
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KR102094806B1 (ko) * | 2013-06-19 | 2020-03-31 | 엘지디스플레이 주식회사 | 발광다이오드 팩키지 및 이를 포함한 액정표시장치 |
CN103456871B (zh) * | 2013-09-23 | 2016-05-25 | 电子科技大学 | 改善pc-LEDs空间光色度均匀性的荧光粉涂层结构 |
US9318671B2 (en) * | 2014-04-18 | 2016-04-19 | Toshiba Corporation | High efficiency light emitting diode package suitable for wafer level packaging |
CN104134743A (zh) * | 2014-06-17 | 2014-11-05 | 京东方光科技有限公司 | Led封装结构及封装方法、显示装置、照明装置 |
CN105676322A (zh) * | 2014-11-21 | 2016-06-15 | 玉晶光电股份有限公司 | 薄型化镜片 |
US10693046B2 (en) | 2015-12-30 | 2020-06-23 | Maven Optronics Co., Ltd. | Chip scale packaging light emitting device and manufacturing method of the same |
TWI581465B (zh) * | 2015-12-30 | 2017-05-01 | 行家光電股份有限公司 | 晶片級封裝發光裝置及其製造方法 |
TWI661582B (zh) * | 2016-03-08 | 2019-06-01 | National Central University | 主動式抑制藍光溢漏之led結構 |
US11522108B2 (en) * | 2017-06-14 | 2022-12-06 | Lite-On Opto Technology (Changzhou) Co., Ltd. | Package structure |
US10950764B2 (en) * | 2017-11-28 | 2021-03-16 | Nichia Corporation | Light-emitting device |
JP7227482B2 (ja) * | 2019-03-29 | 2023-02-22 | 日亜化学工業株式会社 | 発光装置 |
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