CN103187408B - 发光二极管封装结构 - Google Patents

发光二极管封装结构 Download PDF

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CN103187408B
CN103187408B CN201110452980.5A CN201110452980A CN103187408B CN 103187408 B CN103187408 B CN 103187408B CN 201110452980 A CN201110452980 A CN 201110452980A CN 103187408 B CN103187408 B CN 103187408B
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林新强
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Zhanjing Technology Shenzhen Co Ltd
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract

一种发光二极管封装结构，包括基板、设置于基板上的电极、与所述电极电性连接的短波发光二极管芯片和长波发光二极管芯片以及透镜。所述透镜在对应所述长波发光二极管芯片的光路上形成汇聚光线的汇聚部，在对应所述短波发光二极管芯片的光路上形成发散光线的发散部。

Description

发光二极管封装结构
技术领域
本发明涉及一种半导体封装结构，特别是指一种发光二极管封装结构。
背景技术
发光二极管做为第三代光源，具有体积小、节能环保、发光效率高等优点，得到越来越广泛的应用。常用的发光二极管是通过蓝光芯片加黄光荧光粉来得到白光，但是这样得到的白光往往缺少较大波长的红光部分，使得其演色性较差，即不能获得高度物体真实颜色重现效果、而导致物体颜色失真。因此经常通过在封装体中同时封装补偿LED芯片来提高其演色性，但是这种发光二极管封装结构中的多个LED芯片混光的时候，由于各LED芯片发出不同波长的色光，各LED芯片的发光效率也不相同，一般来说，同样电流下，短波长芯片的出光效率较高，而对应长波长芯片的出光效率较低，因此，往往在出光面上会产生出射光强度不均匀的问题。
发明内容
有鉴于此，有必要提供一种光强均匀的高演色性发光二极管封装结构。
一种发光二极管封装结构，包括基板、设置于基板上的电极、与所述电极电性连接的短波发光二极管芯片和长波发光二极管芯片以及透镜。所述透镜在对应所述长波发光二极管芯片的光路上形成汇聚光线的汇聚部，在对应所述短波发光二极管芯片的光路上形成发散光线的发散部。
该发光二极管封装结构，由于所述透镜在对应所述长波发光二极管芯片的光路上形成汇聚光线的汇聚部，在对应所述短波发光二极管芯片的光路上形成发散光线的发散部，使得所述长波发光二极管芯片出射的光线汇聚，增加其出射强度，而所述短波发光二极管芯片出射的光线发散，降低其出射强度，因此使其出光表面各处的光强更加均匀。
附图说明
图1是本发明实施方式提供的一种发光二极管封装结构的出光示意图。
图2是图1中发光二极管封装结构的出光强度与出光角度的关系图。
主要元件符号说明
发光二极管封装结构 10
基板 11
上表面 111
下表面 112
电极 12
短波发光二极管芯片 13
长波发光二极管芯片 14
荧光粉 15
封装层 16
透镜 17
汇聚部 171
发散部 172
反射杯 18
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下将结合附图对本发明作进一步的详细说明。
请参阅图1，本发明实施方式提供的一种发光二极管封装结构10，包括基板11、电极12、短波发光二极管芯片13、长波发光二极管芯片14、荧光粉15，封装层16、透镜17及反射杯18。
基板11为一矩形平板，用以承载所述电极12、短波发光二极管芯片13、长波发光二极管芯片14和封装层16于其上。所述基板11包括上表面111和与上表面111相对且相互平行的下表面112。所述基板11材料为PPA（Polyphthalamide，聚醋酸乙烯酯）等绝缘材料。可以理解的，所述基板11各边的长度可以相同或不同，进一步的，所述基板11的形状并不限于矩形，其形状还可以为圆形等。
电极12形成于所述基板11的表面，该电极12至少为两个，且每个电极12之间相互电绝缘。所述电极12分别自所述基板11的上表面111延伸至下表面112。所述电极12所用的材料为导电性能较好的金属材料，如金、银、铜、铂、铝、镍、锡或镁中的一种或几种的合金。
短波发光二极管芯片13和长波发光二极管芯片14贴设于所述电极12上。所述短波发光二极管芯片13和长波发光二极管芯片14通过金属导线与所述电极12分别电性连接。所述长波发光二极管芯片14设置于所述发光二极管封装结构10的中心，所述短波发光二极管芯片13的数量为多个并围绕该长波发光二极管芯片14设置，且所述短波发光二极管芯片13和长波发光二极管芯片14之间采用串联连接的方式，使该电路配置简单并简化制程，而且容易控制线路中的电流。可以理解的，所述短波发光二极管芯片13和长波发光二极管芯片14也可以采用覆晶或共晶的方式固定于基板11表面的电极12上并与所述电极12电连接。本实施例中所用的短波发光二极管芯片13发出波长大于450nm且小于550nm的蓝绿光。所述长波发光二极管芯片14发出波长大于570nm的红光。所述短波发光二极管芯片13表面还覆盖有荧光粉15，所述短波发光二极管芯片13发出的部分光线激发荧光粉15产生白光。本实施例中所用的荧光颗粒141为黄色荧光粉。
封装层16形成于所述基板11的上表面111上，覆盖所述电极12位于所述上表面111的部分，并包覆所述短波发光二极管芯片13和长波发光二极管芯片14。所述封装层16由封装胶固化形成。
透镜17覆盖于所述封装层16的外侧表面。所述透镜17包括圆弧状的汇聚部171和发散部172，所述汇聚部171位于对应所述长波发光二极管芯片14正上方的位置，而所述发散部172位于对应所述短波发光二极管芯片13正上方的位置。由于所述短波发光二极管芯片13为短波长芯片，其发光效率较高，而所述长波发光二极管芯片14为长波长芯片，其发光效率较低。所述汇聚部171汇聚所述长波发光二极管芯片14出射的光线，加强该长波发光二极管芯片14上方的出射光强，而所述发散部172发散所述短波发光二极管芯片13出射的光线，减弱所述短波发光二极管芯片13上方的出射光强，因此使该发光二极管封装结构10出光表面各处的光强更加均匀，同时由于发光二极管封装结构10本身尺寸较小，因此也使得该发光二极管封装结构10的混光更加均匀。如图2所示，左边两条实线部分为左边的短波发光二极管芯片13出射的光线被分散减弱后的出光强度曲线，虚线部分为长波发光二极管芯片14出射的光线被汇聚加强后的出光强度曲线，右边两条实线部分为右边的短波发光二极管芯片13出射的光线被分散减弱后的出光强度曲线。
反射杯18环绕所述封装层16和透镜17，并设于所述上表面111上的电极12的***部分，用于反射所述短波发光二极管芯片13和长波发光二极管芯片14所发出的光线。所述反射杯18可采用PPA等材料制成。可以理解的，所述反射杯18也可以仅环绕所述封装层16设置，所述透镜17设于所述封装层16和所述反射杯18的上表面。
本发明实施方式提供的发光二极管封装结构10，由于所述透镜17在对应所述长波发光二极管芯片14的光路上形成汇聚光线的汇聚部171，在对应所述短波发光二极管芯片13的光路上形成发散光线的发散部172，使得所述长波发光二极管芯片14出射的光线汇聚，增加其出射强度，而所述短波发光二极管芯片13出射的光线发散，降低其出射强度，因此使其出光表面各处的光强更加均匀。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (11)

1.一种发光二极管封装结构，包括基板、设置于基板上的电极、与所述电极电性连接的短波发光二极管芯片和长波发光二极管芯片以及透镜，其特征在于，所述透镜在对应所述长波发光二极管芯片的光路上形成汇聚光线的汇聚部，在对应所述短波发光二极管芯片的光路上形成发散光线的发散部，所述汇聚部位于对应所述长波发光二极管芯片正上方的位置，所述发散部位于对应所述短波发光二极管芯片正上方的位置。
2.如权利要求1所述的发光二极管封装结构，其特征在于：所述透镜包括一靠近基板的入光面和一远离基板的出光面，所述入光面为一平面，所述出光面对应所述长波发光二极管芯片的聚光部为一凸起，对应所述短波发光二极管芯片的发散部为一凹陷。
3.如权利要求1所述的发光二极管封装结构，其特征在于：所述短波发光二极管芯片和长波发光二极管芯片之间采用串联连接的方式。
4.如权利要求1所述的发光二极管封装结构，其特征在于：所述短波发光二极管芯片为蓝光LED芯片，其发出波长大于450nm且小于550nm的蓝绿光。
5.如权利要求4所述的发光二极管封装结构，其特征在于：所述长波发光二极管芯片为红光LED芯片，其发出波长大于570nm的红光。
6.如权利要求5所述的发光二极管封装结构，其特征在于：还包括覆盖短波发光二极管芯片的黄色荧光粉。
7.如权利要求1至6任一项所述的发光二极管封装结构，其特征在于：长波发光二极管芯片位于基板中部，短波发光二极管芯片位于长波发光二极管芯片附近。
8.如权利要求1至6任一项所述的发光二极管封装结构，其特征在于：短波发光二极管芯片的数量为多个，且环绕长波发光二极管设置。
9.如权利要求1至6任一项所述的发光二极管封装结构，其特征在于：还包括有反射杯，反射杯环绕所述短波发光二极管芯片和长波发光二极管芯片设置。
10.如权利要求9所述的发光二极管封装结构，其特征在于：还包括设置于反射杯内的封装层，所述透镜设于所述封装层和所述反射杯的上表面。
11.如权利要求9所述的发光二极管封装结构，其特征在于：还包括设置于反射杯内的封装层，所述反射杯环绕所述封装层及所述透镜设置。
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TW101100148A TWI459602B (zh) 2011-12-30 2012-01-03 發光二極體封裝結構
US13/570,223 US20130168709A1 (en) 2011-12-30 2012-08-08 Light emitting diode device with multiple light emitting diodes
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