TWI455791B - 靜電吸盤用之吸盤平板的製造方法 - Google Patents
靜電吸盤用之吸盤平板的製造方法 Download PDFInfo
- Publication number
- TWI455791B TWI455791B TW098144477A TW98144477A TWI455791B TW I455791 B TWI455791 B TW I455791B TW 098144477 A TW098144477 A TW 098144477A TW 98144477 A TW98144477 A TW 98144477A TW I455791 B TWI455791 B TW I455791B
- Authority
- TW
- Taiwan
- Prior art keywords
- chuck
- electrostatic chuck
- manufacturing
- wet blasting
- sintered body
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Claims (2)
- 一種靜電吸盤用之吸盤平板的製造方法,係為將具備有電極之吸盤本體的表面作覆蓋之由介電質所成的靜電吸盤用之吸盤平板之製造方法,其特徵為,包含有:將原料粉末壓縮成形為特定之形狀,而後進行燒結並得到燒結體之工程:和對於前述燒結體中之與應吸著的基板相抵接之表面,藉由研磨加工而形成為特定之表面粗度以及平坦度之工程;和施加僅將伴隨著前述研磨加工而在前述表面上所產生之即將脫粒的粒子作選擇性除去的濕噴砂處理之工程,將藉由濕噴砂而噴吹之水壓設定為0.01~0.05MPa,並且將壓縮空氣之壓力設定為0.1~0.3MPa。
- 如申請專利範圍第1項所記載之靜電吸盤用之吸盤平板的製造方法,其中,將在濕噴砂中所使用之砥粒的粒徑,設為前述燒結體之平均粒徑以下。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008329612 | 2008-12-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201032943A TW201032943A (en) | 2010-09-16 |
TWI455791B true TWI455791B (zh) | 2014-10-11 |
Family
ID=42287172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098144477A TWI455791B (zh) | 2008-12-25 | 2009-12-23 | 靜電吸盤用之吸盤平板的製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20110256810A1 (zh) |
JP (1) | JP5188584B2 (zh) |
KR (1) | KR101316804B1 (zh) |
CN (1) | CN102265390B (zh) |
DE (1) | DE112009003808T5 (zh) |
RU (1) | RU2486631C2 (zh) |
SG (1) | SG171819A1 (zh) |
TW (1) | TWI455791B (zh) |
WO (1) | WO2010073514A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT521222B1 (de) * | 2018-05-07 | 2020-04-15 | Engel Austria Gmbh | Vorrichtung zum Handhaben und lokalen Fixieren |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW472500B (en) * | 1999-08-12 | 2002-01-11 | Ibiden Co Ltd | Ceramic substrate, ceramic heater, electrostatic chuck and wafer probe for semiconductor manufacturing and checking device |
TW527264B (en) * | 2001-06-28 | 2003-04-11 | Lam Res Corp | Ceramic electrostatic chuck assembly and method of making |
TW200423250A (en) * | 2003-02-03 | 2004-11-01 | Octec Inc | Plasma processing device, electrode plate for the same, and manufacturing method for electrode plate |
TWI247646B (en) * | 2003-10-29 | 2006-01-21 | Taiwan Semiconductor Mfg | Disassembling device |
TW200715357A (en) * | 2005-07-21 | 2007-04-16 | Sumitomo Heavy Industries | Stage device |
Family Cites Families (32)
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JP2695436B2 (ja) | 1988-06-24 | 1997-12-24 | 富士通株式会社 | 静電チャックの劣化検出回路 |
US5548470A (en) * | 1994-07-19 | 1996-08-20 | International Business Machines Corporation | Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity |
JP3602901B2 (ja) * | 1996-01-30 | 2004-12-15 | 京セラ株式会社 | ウェハ保持部材とその製造方法 |
JPH09219441A (ja) * | 1996-02-08 | 1997-08-19 | Fujitsu Ltd | 静電チャックからの被処理基板離脱方法及び製造装置 |
JP4236292B2 (ja) * | 1997-03-06 | 2009-03-11 | 日本碍子株式会社 | ウエハー吸着装置およびその製造方法 |
JP2000021963A (ja) | 1998-07-06 | 2000-01-21 | Nippon Steel Corp | 静電吸着装置 |
JP2000277598A (ja) * | 1999-03-25 | 2000-10-06 | Ibiden Co Ltd | 静電チャック及びその製造方法 |
JP2001035817A (ja) * | 1999-07-22 | 2001-02-09 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
JP2001118664A (ja) * | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
TW473792B (en) * | 2000-01-20 | 2002-01-21 | Ngk Insulators Ltd | Electrostatic chuck |
JP3228924B2 (ja) * | 2000-01-21 | 2001-11-12 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
KR20040030803A (ko) * | 2001-07-19 | 2004-04-09 | 이비덴 가부시키가이샤 | 세라믹 접합체 및 그 접합방법, 세라믹 구조체 |
JP2003224180A (ja) * | 2002-01-28 | 2003-08-08 | Kyocera Corp | ウエハ支持部材 |
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CN100470756C (zh) * | 2004-06-28 | 2009-03-18 | 京瓷株式会社 | 静电卡盘 |
JP2007088411A (ja) * | 2005-06-28 | 2007-04-05 | Hitachi High-Technologies Corp | 静電吸着装置およびウエハ処理装置ならびにプラズマ処理方法 |
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US7589025B2 (en) * | 2005-12-02 | 2009-09-15 | Rohm And Haas Electronic Materials Llc | Semiconductor processing |
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JP4936925B2 (ja) * | 2006-03-03 | 2012-05-23 | 日本碍子株式会社 | ブラスト処理方法 |
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JP2008160093A (ja) * | 2006-11-29 | 2008-07-10 | Toto Ltd | 静電チャック、静電チャックの製造方法および基板処理装置 |
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TWI475594B (zh) * | 2008-05-19 | 2015-03-01 | Entegris Inc | 靜電夾頭 |
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-
2009
- 2009-12-09 JP JP2010543796A patent/JP5188584B2/ja active Active
- 2009-12-09 US US13/130,595 patent/US20110256810A1/en not_active Abandoned
- 2009-12-09 WO PCT/JP2009/006731 patent/WO2010073514A1/ja active Application Filing
- 2009-12-09 CN CN200980151941.2A patent/CN102265390B/zh active Active
- 2009-12-09 SG SG2011037892A patent/SG171819A1/en unknown
- 2009-12-09 KR KR1020117013611A patent/KR101316804B1/ko active IP Right Grant
- 2009-12-09 RU RU2011130815/28A patent/RU2486631C2/ru active
- 2009-12-09 DE DE112009003808T patent/DE112009003808T5/de not_active Ceased
- 2009-12-23 TW TW098144477A patent/TWI455791B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW472500B (en) * | 1999-08-12 | 2002-01-11 | Ibiden Co Ltd | Ceramic substrate, ceramic heater, electrostatic chuck and wafer probe for semiconductor manufacturing and checking device |
TW527264B (en) * | 2001-06-28 | 2003-04-11 | Lam Res Corp | Ceramic electrostatic chuck assembly and method of making |
TW200423250A (en) * | 2003-02-03 | 2004-11-01 | Octec Inc | Plasma processing device, electrode plate for the same, and manufacturing method for electrode plate |
US20050276928A1 (en) * | 2003-02-03 | 2005-12-15 | Octec Inc. | Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method |
TWI247646B (en) * | 2003-10-29 | 2006-01-21 | Taiwan Semiconductor Mfg | Disassembling device |
TW200715357A (en) * | 2005-07-21 | 2007-04-16 | Sumitomo Heavy Industries | Stage device |
Also Published As
Publication number | Publication date |
---|---|
JP5188584B2 (ja) | 2013-04-24 |
SG171819A1 (en) | 2011-07-28 |
US20110256810A1 (en) | 2011-10-20 |
KR101316804B1 (ko) | 2013-10-11 |
RU2486631C2 (ru) | 2013-06-27 |
JPWO2010073514A1 (ja) | 2012-06-07 |
CN102265390A (zh) | 2011-11-30 |
RU2011130815A (ru) | 2013-01-27 |
KR20110107796A (ko) | 2011-10-04 |
WO2010073514A1 (ja) | 2010-07-01 |
TW201032943A (en) | 2010-09-16 |
CN102265390B (zh) | 2014-10-15 |
DE112009003808T5 (de) | 2012-06-06 |
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