TWI453923B - Light sensing chip package structure - Google Patents

Light sensing chip package structure Download PDF

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TWI453923B
TWI453923B TW101122388A TW101122388A TWI453923B TW I453923 B TWI453923 B TW I453923B TW 101122388 A TW101122388 A TW 101122388A TW 101122388 A TW101122388 A TW 101122388A TW I453923 B TWI453923 B TW I453923B
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Taiwan
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package structure
photo
chip package
groove
recess
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TW101122388A
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TW201401527A (zh
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Txc Corp
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Priority to TW101122388A priority Critical patent/TWI453923B/zh
Priority to CN201210224417.7A priority patent/CN103515372B/zh
Priority to US13/544,806 priority patent/US8716722B2/en
Publication of TW201401527A publication Critical patent/TW201401527A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Device Packages (AREA)
  • Geophysics And Detection Of Objects (AREA)

Description

光感測式晶片封裝結構
本發明係有關一種光感測式晶片封裝結構,特別是指一種具有環境光線感測單元與近接感測單元之光感測式晶片封裝結構。
消費性電子產品,例如手機,使用越來越多的感測器,以達到節省能源並且增進人機間的互動性。舉例來說,目前最新的手機使用到十種以上的感測器。因此工程師們無不汲汲尋求將感測器整合的方法,以期減少能源、空間與成本。
環境光線感測器(ambient light sensor)是用來感測環境光源的變化,改變手機面板的使用亮度。當周遭亮度較暗時,面板亮度跟著變暗避免刺激眼睛,在戶外光源較強時,手機面板背光會跟著變亮增加可視度。環境光線感測器根據環境光源改變面板使用亮度,也能達到節能效果,增加手機使用時間。近距感測器(proximity sensor)是一種非接觸的物體偵測感應器,在行動裝置方面的應用,例如手機的接聽防觸控功能,一旦使用者的頭部靠近聽筒,手機觸控功能會自動關閉,防止講電話時臉與面板接觸造成的功能誤觸。環境光線感測器與近接感測器兩者因同樣都是感測光線,進行作動的光學系統,因此被整合於一封裝結構,以共享空間、耗材並且合併電力供應的線路佈局。
請參閱第1圖,其係現有的光感測式晶片封裝結構示意圖。如圖所示,現有的結構是將一具有環境光線感測單元10與近接感測單元12之感測器13與一IR LED 14並列整合於一封裝體16內,也就是目前所謂的三合一封 裝結構,以節省後續將此封裝體16設置於電路板上時所需佔據的空間,並簡化系統設計時的複雜度。IR LED 14是用以發射紅外線光線經靠近手機之物體反射後,供近接感測單元12接收進行作動。但在IR LED 14發光的特性下,IR LED 14的光線也會從IR LED 14的側面射出,使得光訊號干擾難以處理。因此,在此架構下的解決方式是在感測器13與IR LED 14間利用各種不同的厚阻光材及封裝結構,形成一阻光牆18,來防止IR LED 14與感測器13間的干擾,再者增加感測器13與IR LED14的間距。但厚的阻光材以及感測器與IR LED的間距導致封裝面積無法縮小,且因為阻光材的存在也使的封裝結構較為複雜。
有鑑於此,本發明遂針對上述習知技術之缺失,提出一種嶄新的光感測式晶片封裝結構,以有效克服上述之該等問題。
本發明之主要目的在提供一種光感測式晶片封裝結構,其採疊的設計,因此可縮小封裝面積。
本發明之另一目的在提供一種光感測式晶片封裝結構,其無須使用習知的阻光牆,因此簡化封裝結構及製程。
本發明之再一目的在提供一種光感測式晶片封裝結構,其能降低光訊號干擾的問題。
為達上述之目的,本發明提出一種光感測式晶片封裝結構,其主要包含有一基板;一發光晶片;以及一光學感測晶片。
基板包含有一第一凹槽、一第二凹槽與一光線導引槽。基板具有不透光性。第一凹槽與第二凹槽之開放端方向相異。光線導引槽之一開放端與 第一凹槽之開放端同側,另一開放端連通至第二凹槽。發光晶片是設置於第一凹槽內,光學感測晶片是設置於第二凹槽內。光學感測晶片具有環境光線感測單元與近接感測單元,發光晶片產生的光線與環境光源經由光線導引槽導引至光學感測晶片,以使光學感測晶片進行作動。
茲為使 貴審查委員對本發明之結構特徵及所達成之功效更有進一步之瞭解與認識,謹佐以較佳之實施例圖及配合詳細之說明,說明如後:
請一併參閱第2(a)圖、第2(b)圖、第2(c)圖與第2(d)圖,其係各為本發明之光感測式晶片封裝結構的立體圖、剖視圖、俯視圖與仰視圖。如圖所示,本發明之光感測式晶片封裝結構20主要包含有一基板22;一發光晶片24;以及一光學感測晶片26。
基板22包含有一第一凹槽222、一第二凹槽224與一光線導引槽226。基板22具有不透光性。第一凹槽222與第二凹槽224之開放端方向相異,且第一凹槽222與第二凹槽224至少有部分疊設。光線導引槽226之一開放端與第一凹槽222之開放端同側,另一開放端連通至第二凹槽224。
發光晶片24是設置於第一凹槽222內,且此發光晶片24可以是紅外線LED。光學感測晶片26是設置於第二凹槽224內。舉例來說,光學感測晶片26是使用金屬凸塊28採覆晶方式裝設於第二凹槽224內,並完成光學感測晶片26與基板22的連接。除了金屬凸塊外,也可以錫球或其他方式。
光學感測晶片26具有環境光線感測單元262與近接感測單元264,環境光線感測單元262與近接感測單元264面對光學導引槽226之開口範圍 內。發光晶片24產生的光線與環境光源經由光線導引槽226導引至光學感測晶片26,以使光學感測晶片26進行作動,降低因發光晶片24側面發光造成的光訊號干擾。
舉例來說,第一凹槽222可以如圖所示位於基板22之頂面,而第二凹槽224位於基板22之底面,第一凹槽222可以是與第二凹槽224有部分疊設,以縮小封裝面積。在這情況下,基板22將形成類似H型的結構。
基板22可以是含有內部導線的單層陶瓷基板或印刷電路板或其他材料,並且在基板22底面含有銲墊38(Solder Pad),以成為SMD元件。此外,第一凹槽222的形狀可以是採杯狀或者任何形狀,以縮小發光晶片24的視角或用以改善發光元件特性。第一凹槽222之底面或表面上有一光反射層30,以增加發光晶片24的發射距離,或形成有一阻光層,以減少光訊號干擾。
此外,光線導引槽226在第一凹槽222側之開放端大於第二凹槽224側之開放端,如圖中所示之採用杯狀結構或其他結構,以提升導光率,利於採集發光晶片24產生的光線與環境光源,並導引至光學感測晶片26的感測區域。
本發明之光感測式晶片封裝結構20更包含有一第一封裝膠體32,其係填設於第一凹槽222內且覆蓋發光晶片24,而光線導引槽226內填設有一第二封裝膠體34,且覆蓋光學感測晶片26。第一封裝膠體32與第二封裝膠體34可以是相同透光材質。第一封裝膠體32與第二封裝膠體34可以是透明的,以有最佳之導光性。
再者,基板22上方可再增加具備開口41的上蓋42,如第5圖所示, 並以封裝膠材或錫膏44或其它方式結合,以增加抗光訊號干擾能力。
請參閱第3圖,其係本發明之光感測式晶片封裝結構感測光線時的作動示意圖。如圖所述,環境光源可經由光線導引槽226導引至光學感測晶片26之環境光線感測單元262。當物體36接近時,則會將發光晶片24產生的光線反射並經由光線導引槽226導引至光學感測晶片26,以供近接感測單元264感測。
請參閱第4圖,其係本發明之光感測式晶片封裝結構的另一實施例剖面示意圖。此實施例與先前實施例之差異在於基板22是由數個含有內部導線的陶瓷基板40、40’或印刷電路板或其他材料所疊置而成。
在本發明之光感測式晶片封裝結構下,具有下列幾項優點:
1.因為採疊的設計,因此可縮小封裝面積。
2.無須使用習知的阻光牆,因此能簡化為了防止光訊號干擾的複雜封裝結構及製程。
3.能降低光訊號干擾的問題。
唯以上所述者,僅為本發明之較佳實施例而已,並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾,均應包括於本發明之申請專利範圍內。
10‧‧‧環境光線感測器
12‧‧‧近接感測器
13‧‧‧感測器
14‧‧‧IR LED
16‧‧‧封裝體
18‧‧‧阻光牆
20‧‧‧光感測式晶片封裝結構
22‧‧‧基板
222‧‧‧第一凹槽
224‧‧‧第二凹槽
226‧‧‧光線導引槽
24‧‧‧發光晶片
26‧‧‧光學感測晶片
262‧‧‧環境光線感測單元
264‧‧‧近接感測單元
28‧‧‧金屬凸塊
30‧‧‧光反射層
32‧‧‧第一封裝膠體
34‧‧‧第二封裝膠體
36‧‧‧物體
38‧‧‧銲墊
40、40’‧‧‧陶瓷基板
41‧‧‧開口
42‧‧‧上蓋
44‧‧‧錫膏
第1圖是現有的光感測式晶片封裝結構示意圖。
第2(a)圖、第2(b)圖、第2(c)圖與第2(d)圖係各為本發明之光感測式晶片封裝結構的立體圖、AA’線段剖視圖、俯視圖與仰視圖。
第3圖是本發明之光感測式晶片封裝結構感測光線時的作動示意圖。
第4圖是本發明之光感測式晶片封裝結構的另一實施例剖面示意圖。
第5圖是本發明之光感測式晶片封裝結構的另一實施例示意圖。
20‧‧‧光感測式晶片封裝結構
22‧‧‧基板
222‧‧‧第一凹槽
224‧‧‧第二凹槽
226‧‧‧光線導引槽
24‧‧‧發光晶片
26‧‧‧光學感測晶片
262‧‧‧環境光線感測單元
264‧‧‧近接感測單元
28‧‧‧金屬凸塊
30‧‧‧光反射層
32‧‧‧第一封裝膠體
34‧‧‧第二封裝膠體
38‧‧‧銲墊

Claims (10)

  1. 一種光感測式晶片封裝結構,其包含有:一基板,包含有一第一凹槽、一第二凹槽與一光線導引槽,該基板具有不透光性,該第一凹槽與該第二凹槽之開放端方向相異,該光線導引槽之一開放端與該第一凹槽之開放端同側,另一開放端連通至該第二凹槽;一發光晶片,其係設置於該第一凹槽內;以及一光學感測晶片,其設置於該第二凹槽內,該光學感測晶片具有環境光線感測單元與近接感測單元,該光學發光晶片產生的光線與環境光源經由該光線導引槽導引至該光學感測晶片,以使該光學感測晶片進行作動。
  2. 如請求項1所述之光感測式晶片封裝結構,其中該第一凹槽位於該基板之頂部,該第二凹槽位於該基板之底部,且該第一凹槽與該第二凹槽至少有部分疊設。
  3. 如請求項1所述之光感測式晶片封裝結構,其中該第一凹槽之底面或表面上有一光反射層或阻光層。
  4. 如請求項1所述之光感測式晶片封裝結構,其中該發光晶片是紅外線LED。
  5. 如請求項1所述之光感測式晶片封裝結構,其中該光學感測晶片是覆晶封裝於該第二凹槽內。
  6. 如請求項1所述之光感測式晶片封裝結構,更包含有一第一封裝膠體與一第二封裝膠體,該第一封裝膠體是填設於該第一凹槽內且覆蓋該發光 晶片,該第二封裝膠體是填設於該光線導引槽內且覆蓋該光學感測晶片,且該第一封裝膠體與該第二封裝膠體是透光材料。
  7. 如請求項1所述之光感測式晶片封裝結構,其中該光線導引槽之開放端在該第一凹槽側大於該第二凹槽側。
  8. 如請求項1所述之光感測式晶片封裝結構,其中該基板為含有內部導線的陶瓷基板或印刷電路板,且該基板底部設有銲墊(Solder Pad),以形成SMD元件。
  9. 如請求項8所述之光感測式晶片封裝結構,其中該基板是由數個含有內部導線的陶瓷基板或印刷電路板疊置而成。
  10. 如請求項1所述之光感測式晶片封裝結構,其中該基板上方更設有一具備開口之上蓋,以增加抗光訊號干擾能力。
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