TWI452641B - Semiconductor wafer packaging method, semiconductor wafer connection method and three-dimensional structure of the system method - Google Patents

Semiconductor wafer packaging method, semiconductor wafer connection method and three-dimensional structure of the system method Download PDF

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Publication number
TWI452641B
TWI452641B TW099102215A TW99102215A TWI452641B TW I452641 B TWI452641 B TW I452641B TW 099102215 A TW099102215 A TW 099102215A TW 99102215 A TW99102215 A TW 99102215A TW I452641 B TWI452641 B TW I452641B
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Taiwan
Prior art keywords
wiring
film
semiconductor wafer
resin
resin film
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TW099102215A
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English (en)
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TW201104766A (en
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Shingo Yoshioka
Hiroaki Fujiwara
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Panasonic Corp
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    • G—PHYSICS
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    • G11B5/486—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives with provision for mounting or arranging electrical conducting means or circuits on or along the arm assembly
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Description

半導體晶片之封裝方法、半導體晶片之連接方法及立體構造物之製法
本發明是關於一種於絕緣基材表面封裝半導體晶片之方法、將使用該方法製得之半導體裝置與絕緣基材表面具有複數個半導體晶片連接起來之方法、表面具有配線之半導體裝置等立體構造物及該立體構造物之製法。
過去以來，在絕緣基材上封裝半導體晶片之半導體裝置廣泛為人所知。為了在絕緣基材上搭載半導體晶片，對將此半導體晶片形成於絕緣基材表面之電極焊墊進行電子連接，打線接合技術受到廣泛採用。
打線接合技術之連接線路方法如第6圖所示，將在半導體晶片22之上面所形成之接合焊墊22a與絕緣基材11那側之電極焊墊11a以金、銅等所形成且直徑數十μm之金線13相互連接。更具體地說，通過在可移動之毛細管之中心所形成之貫通孔，將從毛細管先端突出之金線以超音波併用熱壓著技術連接至其中一方之焊墊後，一邊從貫通孔拉出金線，一邊使毛細管移動至另一方之焊墊，朝此另一方之焊墊按壓金線及毛細管，使用超音波併用熱壓著技術將金線連接至焊墊上，與此同時，切換金線。
打線接合技術如第6圖所示，以直徑數十μm之金線13相互連結在半導體晶片22表面所形成之接合焊墊22a與絕緣基材11表面之電極焊墊11a。此種技術有以下之問題。
通常，在半導體裝置之程序中，在打線接合程序後，為了保護半導體晶片，在半導體晶片之表面以樹脂之封止材料進行封止，將其組件化。針對用於此種封止程序之封止材料，通常為了賦予充分之絕緣性並提高尺寸穩定性，會採用多量之無機填充材料。另外，含有多量此種無機填充材料之封止材料所具有之流動性極差。因此，在對模具***搭載有半導體晶片之基材後，若對模具完整地充填封止材料，必須以非常高之高壓來成形。在此種情況下，會對用於接合之金線施以強大外力，因金線切斷或損壞等而導致半導體裝置之可靠性受到破壞之問題產生。為了解決此種問題，也採取將金線直徑加大之對策。不過，廣泛使用於金線上的是高價的金。因此，將金線直徑加大會導致成本提高。再者，在打線接合技術中，考慮金線之偏移量，無法將金線之間隔變窄，所以，也產生配線密度降低之問題。
為了取代打線接合技術，已經有一種後述之非專利文獻1中所記載之技術。在此具體說明其概略內容。(1)首先，以二氧化矽薄膜被覆在彈性基板上所固定之半導體晶片。接著，形成用來於二氧化矽薄膜表面進行平坦化之有機薄膜。然後，使用金屬光罩，去除半導體晶片表面之接合焊墊之表面及於彈性基板上形成之電極焊墊之表面上之二氧化矽薄膜及有機薄膜。(2)僅去除其他部分之有機薄膜。(3)對整個表面附著鍍層晶種，再以覆蓋鍍層晶種之方式形成鍍層用光阻。接著，再於鍍層用光阻表面形成二氧化矽薄膜。然後，在二氧化矽薄膜表面重新形成用來進行平坦化之有機薄膜。(4)使用金屬光罩，沿著連接接合焊墊與電極焊墊之配線會形成之部分之線路，去除二氧化矽薄膜及有機薄膜。(5)將二氧化矽薄膜作為光罩，去除不打算形成二氧化矽薄膜之部分之鍍層用光阻，藉此，使鍍層晶種露出。(6)最後施以鍍層處理，藉此，僅於在上述程序中留下鍍層晶種之部分形成鍍層，並形成配線。
【先前技術文獻】 【非專利文獻】
【非專利文獻1】第19回微機械/MEMS展之同時舉辦課程「精密MEMS計畫中間成果發表會(2008年7月31日於東京Big Sight)之「MEMS-半導體橫向配線技術(東北大學工程學研究所小柳光正先生之演講)」之參考宣傳資料
本發明是為了在過去將配置於絕緣基材表面之半導體晶片連接至在絕緣基材表面形成之電極焊墊所用之打線接合技術中解決上述問題而產生，目的在以簡易之程序形成可在使用樹脂封止材料進行封止時防止金線被切換或損壞之配線。
又，本發明之目的為，在表面具有配線之立體構造物中，提高配線相對於該立體構造物之連接強度，於是，可減少配線之脫落、偏移、斷線等問題。
本發明之其中一部分為一種半導體晶片之封裝方法，用來將配置於絕緣基材表面之半導體晶片之表面所具有之接合焊墊電性連接至形成於上述絕緣基材表面之上述接合焊墊所對應之電極焊墊上，其特徵在於：包括在連接上述接合焊墊與上述電極焊墊之線路之表面形成樹脂被膜的被膜形成程序、沿著用來連接上述接合焊墊與上述電極焊墊之線路對深度等於或大於上述樹脂被膜之厚度的配線溝槽進行雷射加工以形成之的配線溝槽形成程序、於上述配線溝槽之表面附著鍍層觸媒或其前驅體的觸媒附著程序、在既定之液體中溶解或膨脹浸潤上述樹脂被膜以去除之的被膜去除程序及去除上述樹脂被膜後僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜的鍍層處理程序。
本發明之另一部分為一種立體構造物，其為表面具有配線之立體構造物，其特徵在於：在立體構造物之表面，形成橫亙於立體構造物相互交叉之鄰接面之間或者在平面或曲面中延伸之配線用凹溝，在上述配線用凹溝之中埋入配線用導體之至少其中一部分。
本發明之目的、部分、特徵及優點可由以下之詳細記載及附加圖面而得到進一步理解。
根據本發明之發明團隊之探討，採用了非專利文獻1中所記載之方法，不使用打線接合技術，而是形成將基板表面之電極焊墊與晶片表面之接合焊墊連接起來的配線。然而，此種方法需要多道複雜之程序，可能不適於量產化。本發明是根據此種探討之結果而產生的發明。以下將詳細說明用來實施本發明之型態。
(第1實施型態)
在此一邊參照圖面，一邊說明本發明之半導體晶片之封裝方法之最佳實施型態。
第1圖及第2圖為用來說明本實施型態之半導體晶片之封裝方法之各程序的模式圖。此外，在第1圖及第2圖中，1為絕緣基材，1a為電極焊墊，2為半導體晶片，2a為接合焊墊，3為樹脂被膜，4為配線溝槽，5為鍍層觸媒，6為無電解鍍層薄膜，7為配線。
在本實施型態之製造方法中，如第1(A)圖所示，首先，準備好於既定之晶片搭載區域配置半導體晶片2之絕緣基材1。
此外，將半導體晶片2以接著劑等固著於絕緣基材1之表面之既定晶片搭載區域，為使接著面不殘留間隙，使用樹脂填充起來。此外，如後面所揭示，為了避免在半導體晶片2之矽晶圓(特別是其切割後之側面)上直接形成由無電解鍍層薄膜6所構成之配線7，以樹脂等之絕緣性有機材料以及以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等，至少預先被覆將形成上述配線7之半導體晶片2之部分會更好。
作為半導體晶片，可使用IC(積體電路)、LSI(大型積體電路)、VLSI(超大型積體電路)、LED晶片等發光半導體晶片等，不受特殊限定。
另外，如第1(B)圖所示，在半導體晶片2及絕緣基材1之表面形成樹脂被膜3(被膜形成程序)。
作為絕緣基材1，過去以來，使用於半導體晶片之封裝的各種有機基材、無機基材不受到特別限定而被使用。有機基材之具體實施例之一是由環氧樹脂、壓克力樹脂、聚碳酸酯樹脂、聚醯亞胺樹脂、聚苯硫醚樹脂等所構成的基材。作為基材型態，可為薄片、薄膜、預浸布、立體形狀之成形體等，不受特別限定。絕緣基材1之厚度不受到特別限定。當其為薄片、薄膜或預浸布時，可為10~200μm，20~100μm則更好。
關於樹脂被膜3之形成方法，只要至少能在絕緣基材1之表面及半導體晶片2之表面上之能夠連接各電極焊墊1a,1a與各接合焊墊2a,2a之線路之表面形成樹脂被膜3，不受到特別限定。具體地說，如第1(B)圖所示，可在配置絕緣基材1之半導體晶片2之那面的整個面上塗佈用來形成樹脂被膜3之液狀材料後，藉由使其乾燥之方法等來形成。又，亦可將預先形成於支持基材上之樹脂被膜3轉印至絕緣基材1表面來形成。塗佈樹脂液之方法不受到特別限定。具體地說，可使用浸漬法、噴覆法等方法。
關於樹脂被膜3之厚度，宜在10μm以下，5μm以下且0.1μm以上更好，1μm以上則又更好。當厚度過厚時，藉由對樹脂被膜3進行雷射加工以去除一部分時，會有使尺寸精度下降的傾向。又，當厚度過薄時，會有難以形成均勻膜厚之被膜的傾向。
關於用來形成樹脂被膜3之材料，只要能在後述之去除程序中可溶解去除或膨脹浸潤去除之樹脂材料都可使用，不受到特別限定。具體地說，可使用光阻領域所使用之光阻樹脂、相對於既定液體為高膨潤度而可藉由膨脹浸潤而剝離之樹脂等。
作為光阻樹脂之具體實施例，可使用光硬化性環氧樹脂、蝕刻光阻、聚酯系樹脂、松脂系樹脂等。
又，作為膨潤性樹脂，膨潤度相對於既定液體宜為50%以上，100%則更好，500%以上則又更好。作為此種樹脂之具體實施例，可使用藉由調整交聯度或膠化度等來調整到所要之膨潤度之後的苯乙烯-丁二烯共聚物之二烯系彈性體、丙烯酸聚酯共聚物之壓克力系彈性體及聚酯系彈性體等。
關於樹脂被膜3，在此進一步詳細說明。
作為樹脂被膜(光阻)3，只要能在後述之去除程序中被去除，不受到特別限定。樹脂被膜3宜為可藉由在既定之液體中溶解或膨脹浸潤而從絕緣基材1之表面輕易溶解去除或剝離去除的樹脂被膜。具體地說，可使用由可輕易溶解於有機溶劑、鹼性溶液之可溶性樹脂所構成的被膜、由可在既定液體(膨潤液)中膨脹浸潤之膨潤性樹脂所構成的被膜等。此外，關於膨潤性樹脂被膜，不僅僅包含不會實際溶解於既定液體中且藉由膨脹浸潤而從絕緣基材1之表面輕易剝離的樹脂被膜，也包含可在既定液體中膨脹浸潤並至少溶解一部分且藉由此膨脹浸潤與溶解而從絕緣基材1之表面輕易剝離的樹脂被膜、可溶解於既定液體且藉由此溶解而從絕緣基材1之表面輕易剝離的樹脂被膜。藉由使用此種樹脂被膜，可輕易且良好地從絕緣基材1之表面去除樹脂被膜3。當去除樹脂被膜3時，若使樹脂被膜崩壞，附著於該樹脂被膜3上之鍍層觸媒5會飛散出去，飛散出去之鍍層觸媒再次附著於絕緣基材1上，會產生在其之一部分上形成不需要之鍍層的問題。在本實施型態中，由於可輕易且良好地從絕緣基材1之表面去除樹脂被膜3，所以可對此種問題防患未然。
關於樹脂被膜3之形成方法，不受到特別限定。具體地說，可在絕緣基材1之表面上塗佈用來形成樹脂被膜3之液狀材料後使其乾燥，或者，在支持基材上塗佈上述液狀材料後，將藉由乾燥所形成之樹脂被膜轉印至絕緣基材1之表面。又，亦可在絕緣基材1之表面上，貼合由預先形成之樹脂被膜3所構成的樹脂薄膜。此外，塗佈液狀材料之方法不受到特別限定。具體地說，可使用習知之旋塗法、塗佈棒技術等方法。
關於用來形成樹脂被膜3之材料，只要能在既定之液體藉由溶解或膨脹浸潤而從絕緣基材1之表面輕易溶解去除或剝離去除之樹脂都可使用，不受到特別限定。樹脂之膨潤度相對於既定液體宜為50%以上，100%則更好，500%以上則又更好。此外，當膨潤度過低時，樹脂被膜有難以剝離之傾向。
此外，樹脂被膜之膨潤度(SW)可將膨潤前重量m(b)及膨潤後重量m(a)代入「膨潤度SW={(m(a)-m(b))/m(b)}×100(%)」之公式來求得。
此種樹脂被膜3可藉由在絕緣基材1之表面上塗佈彈性體之懸浮液或乳化液後使其乾燥來形成，或者，可在支持基材上塗佈彈性體之懸浮液或乳化液後，將藉由乾燥所形成之被膜轉印至絕緣基材1之表面來輕易形成。
作為彈性體之具體實施例，可使用苯乙烯-丁二烯共聚物之二烯系彈性體、丙烯酸聚酯共聚物之壓克力系彈性體及聚酯系彈性體等。當使用此種彈性體時，藉由作為懸浮液或乳化液而分散之彈性體樹脂粒子之交聯度或膠化度等，可輕易形成所要之膨潤度之樹脂被膜。
此外，作為此種樹脂被膜3，特別適合使用膨潤度隨膨潤液之pH值變化的被膜。當使用此種被膜時，藉由使後述之觸媒附著程序中之液性條件與後述之被膜去除程序中之液性條件相異，一方面可針對觸媒附著程序中之pH值維持樹脂被膜3對絕緣基材1之高度密著力，一方面可針對被膜去除程序中之pH值將樹脂被膜3輕易從絕緣基材1剝離去除。
進一步具體地說，當後述之觸媒附著程序包括在pH值為1~3之酸性觸媒金屬膠體溶液中進行處理之程序且後述之被膜去除程序包括在pH值為12~14之鹼性溶液中膨脹浸潤樹脂被膜之程序時，上述樹脂被膜3相對於上述酸性觸媒金屬膠體溶液之膨潤度宜在60%以下，在40%以下更好，相對於上述鹼性溶液之膨潤度宜在50%以上，在100%以上更好，500%以上又更好。
作為此種樹脂被膜3之實施例，可使用從具有既定量羧基之彈性體所形成之薄片、將使用於印刷配線板之圖案製作用乾燥薄膜光阻(以下有時記述為「DFR」)等的光硬化性鹼性顯影型光阻全面硬化所得到的薄片、熱硬化性或鹼性顯影型之薄片等。
作為具有羧基之彈性體之具體實施例，藉由將具有羧基之單體作為共聚物成份來含有，可使用在分子中具有羧基之苯乙烯-丁二烯共聚物之二烯系彈性體、丙烯酸聚酯共聚物之壓克力系彈性體或聚酯系彈性體等。當使用此種彈性體時，藉由調整作為懸浮液或乳化液來分散之彈性體之酸當量、交聯度或膠化度等，可形成具有所要之鹼性膨潤度之樹脂被膜。又，可使其膨潤度相對於在被膜去除程序中所使用之既定液體更大，也可輕易形成可溶解於上述液體中之樹脂被膜。彈性體中之羧基可在鹼性水溶液中使樹脂被膜得到膨脹浸潤，具有從絕緣基材1之表面剝離樹脂被膜3的作用。又，所謂酸當量，是指每一個羧基之聚合體分子量。
作為具有羧基之單體之具體實施例，可使用(甲基)丙烯酸、反丁烯二酸、肉桂酸、巴豆酸、衣康酸及順丁烯二酸無水物等。
作為此種具有羧基之彈性體中之羧基含有比例，以酸當量來計算，宜為100~2000，100~800則更好。當酸當量過小時(羧基之數目相對上過多時)，與溶媒或其他組成物之相溶性下降，因此，有耐受性相對於無電解鍍層之前處理液跟著下降之傾向。又，當酸當量過大時(羧基之數目相對上過少時)，有在鹼性水溶液中之剝離性下降之傾向。
又，作為彈性體之分子量，宜為1萬~100萬，2萬~50萬則更好，2萬~6萬又更好。當彈性體之分子量過大時，有剝離性下降之傾向。當過小時，由於黏度下降，要維持樹脂被膜之厚度均勻變得困難，並且，有耐受性相對於無電解鍍層之前處理液也跟著下降之傾向。
又，作為DFR，可將含有既定量羧基之丙烯酸系樹脂、環氧系樹脂、苯系樹脂、酚系樹脂、氨基鉀酸酯系樹脂等作為樹脂成份，使用含有光聚合開始劑之光硬化性樹脂組成物之薄片。作為此種DFR之具體實施例，若是一定要舉出實例，如同用特開2000-231190號公報、特開2001-201851號公報、特開平11-212262號公報所揭示，可使用將光聚合性樹脂組成物之乾燥薄膜全面硬化而得到之薄片、作為鹼性顯影型DFR在市場上販售之旭化成工業社製之UFG系列等。
再者，作為其他樹脂被膜3之實施例，可使用含有羧基且以松脂為主成份之樹脂(例如吉川化工社製之「NAZDAR229」)、以酚為主成份之樹脂(例如LEKTRACHEM社製之「104F」)等。
樹脂被膜3可在絕緣基材1之表面使用習知之旋塗法、塗佈棒技術等塗佈方法來塗佈樹脂之懸浮液或乳化液之後再進行乾燥而形成，或者，使用真空層壓機等將形成於支持基材之DFR貼合於絕緣基材1之表面後，藉由進行全面硬化而輕易形成。
又，作為上述樹脂被膜3，若也使用主成份為具有酸當量為100~800之羧基之丙烯酸系樹脂所構成之樹脂(含有羧基之丙烯酸系樹脂)的樹脂被膜會更好。
再者，除以上所提及之外，作為上述樹脂被膜3，以下為更好的選擇。亦即，構成上述樹脂被膜3之光阻材料所需要之特性可包括：(1)在後述之觸媒附著程序中，對於浸漬已形成樹脂被膜3之絕緣基材1的液體(鍍層親核加成藥液)具有高度耐受性。(2)在後述之被膜去除程序中，可藉由將已形成樹脂被膜3之絕緣基材1浸漬於鹼性液體中，輕易去除樹脂被膜(光阻)3。(3)成膜性高。(4)可輕易乾燥薄膜(DFR)化。(5)保存性高。作為鍍層親核加成藥液，後面將會敘述，當其為酸性Pd-Sn膠體觸媒系統時，則全部為酸性(例如pH值為1~3)水溶液。又，當其為鹼性Pd離子觸媒系統時，觸媒活化劑為弱鹼性(pH值為8~12)，在此之外的情況為酸性。由於以上所述，作為相對於鍍層親核加成藥液的耐受性，需要pH值為1~11，pH值為1~12則更好。此外，所謂耐受性，是指當將形成光阻之樣本浸漬於藥液中時，可充分抑制光阻之膨脹浸潤或溶解，達成光阻之作用。又，一般來說，浸漬溫度為室溫至攝氏60度，浸漬時間為1~10分鐘，光阻膜厚為1~10μm，但實際上並無特殊限定。作為使用於被膜去除程序之鹼性剝離藥液，後面將會敘述，一般使用氫氧化鈉水溶液、碳酸鈉水溶液。其pH值為11~14，若pH值在12到14之間，對於簡單去除光阻薄膜會更有幫助。一般來說，氫氧化鈉水溶液濃度為1~10%，處理溫度為室溫至攝氏50度，處理時間為1~10分鐘，並進行浸漬或噴覆處理，但實際上並無特殊限定。為了在絕緣材料上形成光阻，成膜性也很重要。需要沒有小孔等而具有均一性之薄膜形成過程。又，為了簡化程序、減少材料之浪費等，進行乾燥薄膜化，不過，為了確保可處理性，需要薄膜之曲折性。又，使用層壓機(滾筒、真空)對絕緣材料貼附進行乾燥薄膜化後之光阻。貼附之溫度為室溫至攝氏160度，壓力及時間則任意決定。如此，在貼附時可求得粘著性。因此，一般來說，進行乾燥薄膜化之後的光阻亦兼顧到防止灰塵附著，與載體薄膜、覆蓋薄膜夾在一起，形成三層結構，不過，實際上不受到此限定。保存性宜為可在室溫下保存之條件，然而也需要可在冷藏、冷凍狀態下之保存。如此，需要在低溫時防止乾燥薄膜之組成分離或曲折性下降而破裂。
從以上之觀點可知，作為上述樹脂被膜3，可使用將在分子中至少具有一個共聚性不飽和基之羥酸或酸無水物之至少一種以上之單量體(a)和與單量體(a)共聚之至少一種以上之單量體(b)共聚在一起而得到之共聚物樹脂或含有此共聚物樹脂之樹脂組成物。作為此已知技術，若一定要舉出實例，有特開平7-281437號公報、特開2000-231190號公報、特開2001-201851號公報等。作為單量體(a)之其中一例，可使用(甲基)丙烯酸、反丁烯二酸、肉桂酸、巴豆酸、衣康酸及順丁烯二酸無水物、順丁烯二酸半聚酯、丁基丙烯酸等或組合其中2種以上之物質。作為單量體(b)之實施例，一般為非酸性且在分子中具有(1個)共聚性不飽和基之物質，但實際上無限制。只要能保持後述之觸媒附著程序中之耐受性、硬化膜之可撓性等各種特性，即為適當選擇。具體地說，此類物質包括甲基丙烯酸(甲酯)、乙基丙烯酸(甲酯)、異丙基丙烯酸(甲酯)、n-丁基丙烯酸(甲酯)、第二丁基丙烯酸(甲酯)、第三丁基丙烯酸(甲酯)、2-羥乙基丙烯酸(甲酯)、2-羥丙基丙烯酸(甲酯)類。亦包括醋酸乙烯等之乙烯醇之聚酯類、丙烯腈(甲酯)、苯乙烯或可聚合之苯乙烯誘導體等。亦包括藉由僅僅聚合在分子中具有1個上述之聚合性不飽和基的羥酸或酸無水物而得到的物質。再者，為了可得到三次元交聯，可選定用於聚合物之單量體中具有複數個不飽和基的單量體。亦可對分子架構導入環氧基、羧基、胺基、醯胺基、乙烯基等反應性官能基。
當樹脂中含有核酸基時，樹脂中所含有之核酸基之含量以酸當量來計算的話，宜為100~2000，100~800則更好。當酸當量過低時，與溶媒或其他組成物之間的相溶性及鍍層前處理液耐受性會下降。當酸當量過高時，剝離性會下降。又，單量體(a)之組成比例宜為5~70質量百分比。
樹脂組成物中之主要樹脂(混合樹脂)將以上述聚合物樹脂作為必要成份，亦可添加寡聚物、單體、填充劑等其他添加劑中至少其中一種。主要樹脂宜為具熱可塑性之線性聚合物。為了控制流動性、結晶性等，有時會進行接枝或分枝。分子量方面，重量平均分子量為1,000~500,000，5,000~50,000則更好。當重量平均分子量較小時，薄膜之曲折性、鍍層親核加成藥液耐受性(耐酸性)會下降。又，當分子量較大時，鹼性剝離性、變成乾燥薄膜之後的貼附性會惡化。再者，為了提供鍍層親核加成藥液耐受性，抑制雷射加工時之熱變形並控制流動性，可導入交聯點。
單體及寡聚物只要是可輕易去除對鍍層親核加成藥液之耐受性及鹼性的物質即可。又，為了提高乾燥薄膜(DFR)之貼附性，可以可塑劑之方式作為黏著性賦予材料來使用。再者，為了賦予各種耐受性，可添加交聯劑。具體地說，可使用的物質包括甲基丙烯酸(甲酯)、乙基丙烯酸(甲酯)、異丙基丙烯酸(甲酯)、n-丁基丙烯酸(甲酯)、第二丁基丙烯酸(甲酯)、第三丁基丙烯酸(甲酯)、2-羥乙基丙烯酸(甲酯)、2-羥丙基(甲基)丙烯酸酯類。亦包括醋酸乙烯等之乙烯醇之聚酯類、丙烯腈(甲酯)、苯乙烯或可聚合之苯乙烯誘導體等。亦包括可藉由僅僅聚合在分子中具有1個上述之聚合性不飽和基的羥酸或酸無水物而得到的物質。再者，亦包含多官能性不飽和化合物。其可為上述之單體或使單體反應之寡聚物中任一種。除了上述之單體外，亦可為包含2種以上其他光聚合性單體之物質。作為單體之實施例，可使用含有1,6一己二醇二(甲基)丙烯酸酯、1,4-環己二醇二(甲基)丙烯酸酯，又，聚丙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、聚氧乙二醇及聚氧丙二醇二(甲基)丙烯酸酯等之聚氧二元醇二(甲基)丙烯酸酯、2-二(p-羥苯基)丙烷二(甲基)丙烯酸酯、甘油基三(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三羥甲基丙烷縮水甘油醚三(甲基)丙烯酸酯、BFA二縮水甘油醚三(甲基)丙烯酸酯、2,2-bis(4-三甲氧基甲矽烷基五乙氧基苯)丙烷、氨基甲酸酯之化學基的多官能(甲基)丙烯酸酯等。可為上述之單體或使單體反應之寡聚物。
填充劑不受特別限定，可使用二氧化矽、氫氧化鋁、氫氧化鎂、碳酸鈣、黏土、高嶺土、氧化鈦、硫酸鋇、氧化鋁、氧化鋅、滑石、雲母、玻璃、鈦酸鉀、矽灰石、硫酸鎂、硼酸鋁、有機填充劑等。又，光阻之最佳厚度為相當薄之0.1~10μm，所以，填充劑尺寸也要小一點比較好。平均粒徑小一點且使用將較粗顆粒切割過之物質比較好，不過，亦可在分散時壓碎或在過濾時去除較粗顆粒。
在其他添加劑方面，可使用光聚合性樹脂(光聚合開始劑)、聚合禁止劑、著色劑(染料、顏料、發色系列顏料)、熱聚合開始劑、環氧樹脂、氨基甲酸酯等交聯劑等。
在接著將說明的配線溝形成程序中，樹脂被膜3會受到雷射加工等處理，所以，需要賦予光阻材料雷射所產生之燒蝕性。關於雷射加工機之種類，可選擇碳酸氣雷射或準分子雷射加工機、UV-YAG雷射加工機等。這些雷射加工機各自具有不同之固有波長，藉由選擇紫外線吸收率相對於該波長為較高之材料，可提高產率。其中，UV-YAG雷射加工機適合進行微細加工，雷射波長為諧波355nm之3倍，為諧波266nm之4倍，所以，光阻材料(樹脂被膜3之材料)宜選擇紫外線吸收率相對於這些波長為較高之材料。紫外線吸收率越高，光阻(樹脂被膜3)之加工就越精緻，於是得到產率之提高。不過，此點並不造成限制，也有適合選擇紫外線吸收率相對較低之光阻材料的情況。紫外線吸收率越低，紫外光就會通過光阻(樹脂被膜3)，所以，可在其下之絕緣基材1之加工過程中集中紫外線能量，例如，當絕緣基材1為難以加工之材料時，可以得到特別良好之結果。如此，可輕易進行光阻(樹脂被膜3)之雷射加工及絕緣基材1之雷射加工，而且可根據這些關係來設計光阻材料。
接著，如第1(C)圖所示，形成深度等於或大於已形成之樹脂被膜3之厚度的配線溝4(配線溝形成程序)。配線溝4之形成方式為，沿著將半導體晶片2之表面之各接合焊墊2a,2a以及在與各接合焊墊2a,2a連接之絕緣基材1表面所形成之各電極焊墊1a,1a連接起來的路徑，進行雷射加工。
如此，沿著用來連接各接合焊墊2a,2a與各電極焊墊1a,1a之路徑形成配線溝4。如此，藉由形成配線溝4，僅於在後面之程序中形成配線溝4之部分之表面附加無電解鍍層薄膜6，形成配線。
接著，如第2(A)圖所示，在形成有配線溝4之表面上，附著鍍層觸媒5(觸媒附著程序)。
鍍層觸媒5為為了僅於在後述之鍍層處理程序中將形成無電解鍍層薄膜6之部分形成鍍層薄膜而附加之觸媒。關於鍍層觸媒，只要是一般所知之無電解鍍層用之觸媒皆可使用。又，可預先附著鍍層觸媒之前驅體，在去除樹脂被膜3之後產生鍍層觸媒。鍍層觸媒之具體實施例包括金屬鈀(Pd)、鉑(Pt)、銀(Ag)等或產生這些金屬之前驅體等。
附著鍍層觸媒5之方法之一為，於pH值為1~3之酸性條件下進行處理之酸性Pd-Sn膠體溶液中進行處理後，再於酸溶液中進行處理。更具體地說，可採取以下之方法。首先，將附著於形成有配線溝4之部分之表面的油分等浸漬於界面活性劑之溶液(清洗調節劑)中並用熱水洗滌。接著，根據需要，使用過硫酸鈉-硫酸系之軟蝕刻劑來進行軟蝕刻處理。然後，進一步在pH值為1~2之硫酸水溶液、鹽酸水溶液等酸性溶液中進行酸洗。接著，浸漬於以濃度為0.1%之氯化亞錫水溶液等為主成份的預浸液以使其吸附氯化亞錫之後，進一步浸漬於含有氯化亞錫與氯化鈀且pH值為1~3之酸性Pd/Sn膠體等酸性觸媒金屬膠體溶液，藉此，使其凝集並吸附Pd及Sn。然後，在所吸附之氯化亞錫與氯化鈀之間，引起氧化還原反應(SnCl2 +PdCl2 →SnCl4 +Pd↓)。藉此，作為鍍層觸媒之金屬鈀析出。
此外，作為酸性觸媒金屬膠體溶液，可使用已公開之Pd/Sn膠體催化劑，亦可使用其中採用酸性觸媒金屬膠體溶液之市售鍍層處理。系統化並販售此種處理的公司包含Rohm and Haas電子材料股份有限公司。
藉由此種觸媒附著處理，如第2(A)圖所示，配線溝4之表面及樹脂被膜3之表面上附著有鍍層觸媒5。
接著，如第2(B)圖所示，藉由在既定之液體中溶解或膨脹浸潤樹脂被膜3，從絕緣基材1及半導體晶片2之表面去除(被膜去除程序)。根據此程序，可僅在形成有絕緣基材1及半導體晶片2之表面之配線溝4的部分的表面殘留鍍層觸媒5。另一方面，形成有配線溝4之部分以外的樹脂被膜3的表面上所附著的鍍層觸媒5在去除樹脂被膜3時被去除。
在以膨脹浸潤方式或溶解方式去除樹脂被膜3之方法中，包括在既定之膨潤液或溶解液中以既定之時間浸漬樹脂被膜3的方法。又，為了提高剝離性及溶解性，在浸漬之過程中尤其最好進行超音波照射。此外，若以膨脹浸潤之方式進行剝離，可根據需要以輕微外力拉開。
作為溶解或膨脹浸潤樹脂被膜3之液體，只要能在實質上不會分解或溶解絕緣基材1及鍍層觸媒5之情況下輕易溶解或膨脹浸潤以導致剝離的液體即可，沒有特殊限定。具體地說，當使用光硬化性環氧樹脂作為光阻樹脂時，使用有機溶劑或鹼性水溶液之光阻去除劑等。又，當使用二烯系彈性體、丙烯酸系彈性體及聚酯系彈性體之類的彈性體作為膨潤性樹脂時，最好使用濃度為1~10%之氫氧化鈉水溶液等鹼性水溶液。
又，作為樹脂被膜3，若為將分子中具有至少一個共聚 性不飽和基之碳酸或酸無水物之至少一種以上之單體(a)以及與單體(a)共聚之至少一種以上之單體(b)共聚而得到的共聚物樹脂或含有此共聚物樹脂之樹脂組成物，或者，若由含有上述羧基之丙烯酸系樹脂所形成，最好使用濃度為1~10%之氫氧化鈉水溶液等鹼性水溶液。
此外，當在觸媒附著程序中採用於如上所述之酸性條件下進行處理之鍍層處理時，樹脂被膜3宜為膨潤度於酸性條件下為60%以下甚至40%以下而在鹼性條件下為50%以上之二烯系彈性體、丙烯酸系彈性體及聚酯系彈性體之類的彈性體所形成，或者，為將分子中具有至少一個共聚性不飽和基之碳酸或酸無水物之至少一種以上之單體(a)以及與單體(a)共聚之至少一種以上之單體(b)共聚而得到的共聚物樹脂或由含有此共聚物樹脂之樹脂組成物所形成，或者，由含有上述羧基之丙烯酸系樹脂所形成。此種樹脂被膜藉由浸漬於pH值為11~14甚至最好pH值為12~14之鹼性水溶液如濃度1~10%之氫氧化鈉水溶液等，輕易地產生溶解或膨脹浸潤，以溶解方式去除或剝離方式去除。此外，為了提高溶解性或剝離性，可在浸漬過程中進行超音波照射。又，可根據需要以輕微外力以拉扯方式來去除。
此外，藉由預先使樹脂被膜含有螢光性物質，可在上述被膜去除程序之後，於檢查對象面上使用紫外線或近似紫外線照射螢光性物質所產生之發光來檢查是否有被膜去除不良之情況(檢查程序)。在本實施型態中，可形成配線寬度極為狹窄之金屬配線。在此種情況下，鄰接之金屬配線之間的樹脂被膜恐怕會無法完全去除而殘留下來。當在金屬配線之間殘留樹脂被膜時，該部分會形成鍍層薄膜，成為導致短路之原因。在此種情況下，預先使樹脂被膜3含有螢光性物質，在被膜去除程序之後，於被膜去除面上照射既定之發光源，藉由螢光性物質僅使殘留被膜之部分發光，藉此，可檢查出是否有被膜去除不良之情況以及被膜去除不良之位置。
樹脂被膜3所含有之螢光性物質只要是能夠由既定之光源照射而產生發光特性的物質即可，沒有特別限定。其具體例包括Fluoresceine、Eosine、Pyronine G等。
在此檢查程序中被檢測出使螢光性物質發光之部分即為樹脂被膜3殘留之部分。於是，藉由去除被檢測出會發光之部分，可抑制鍍層薄膜在該部分形成。藉此，可抑制短路之發生，防患未然。
接著，如第2(C)圖所示，僅於鍍層觸媒5所殘留之部位形成無電解鍍層薄膜6(鍍層處理程序)。藉由此種程序，可僅於形成配線溝槽4之部分使無電解鍍層薄膜6析出。藉由此種無電解鍍層薄膜6，形成用來使各電極焊墊1a,1a與半導體晶片2表面之複數個接合焊墊2a,2a作電性連接的配線7。
作為無電解鍍層處理之方法，可將包括上面附著鍍層觸媒5之半導體晶片2的絕緣基材1浸漬於無電解鍍層液之處理槽中，僅於上面附著鍍層觸媒5之部分使無電解鍍層薄膜6析出。
作為使用於無電解鍍層之金屬，可使用銅(Cu)、鎳(Ni)、鈷(Co)、鋁(Al)等。在這些金屬之中，以銅為主成份之鍍層所具有的導電性優良。又，當金屬中含有鎳時，耐蝕性及與焊料之間的密合度較佳。
藉由此種鍍層處理，僅於連接各接合焊墊2a,2a與各電極焊墊1a,1a之路徑之表面之鍍層觸媒5所殘留之部分有無電解鍍層薄膜6析出。藉此，形成用來連接各接合焊墊2a,2a與各電極焊墊1a,1a的配線7。此外，未形成配線溝槽4之部分因被樹脂被膜3而附著有鍍層觸媒5而受到保護，所以未有無電解鍍層薄膜6析出。於是，即使在形成微細配線的情況下，也不會在鄰接之配線之間殘留不必要之鍍層薄膜，於是可抑制短路等不良情況。
此外，關於用於配線之鍍層薄膜之形成，可僅使用如上所述之無電解鍍層之程序來形成厚膜之鍍層薄膜，不過，為了縮短程序之循環時間，可併用已公開之電解鍍層(電解鍍層程序)。具體地說，在電解鍍層處理槽中，使陽極側與由上述程序所形成之無電解鍍層導通，使其與陰極電極之間有電流流過，藉此，形成無電解鍍層薄膜6之部分得以變成較厚之薄膜。根據此種方法，為了縮短薄膜變厚之時間，可縮短形成鍍層薄膜所需要之時間。
以此種方式形成之鍍層薄膜之膜厚不受特別限定，但具體地說，最好為0.1~10μm，1~5μm則更好。
經過此種程序，如第2(C)圖所示，於絕緣基材1之表面形成用來封裝半導體晶片2之構成體。
以此種方式於絕緣基材1表面封裝半導體晶片2之構成體為了保護其表面，宜使用***成型等方法來進行樹脂封止。此種封止可為過去所使用之半導體裝置之製程中之封止方法，不受特別限定。
在第3圖中，表示半導體裝置20的說明圖，其藉由如上所述之程序，使整個半導體晶片2之接合焊墊2a,2a,…連接至電極焊墊1a,1a,…而得到之構成體10藉由封止材料8封止之後而得到。如第3圖所示，在構成體10中，於絕緣基材1之表面配設半導體晶片2。然後，設於半導體晶片2之表面的複數個接合焊墊2a,2a,…分別連接至藉由鍍層薄膜所構成之配線7形成於絕緣基材1表面的電極焊墊1a,1a,…。配線7以蜿蜒之狀態形成於半導體晶片2之側面及絕緣基材1之表面。因此，即使在將構成體10***鑄模內再進行樹脂封止以製造半導體裝置20的情況下，也不會對配線施加過大的力量。於是，在藉由打線接合所連接之構成體中，不會產生(對金線)施加負荷之現象。
(第2實施型態)
在此一邊參照圖面，一邊說明本發明之複數個半導體晶片之連接方法之最佳實施型態。此外，各程序和於第1實施型態中所說明過之程序相同，所以，重複之部分之詳細說明在此省略。又，附加之符號與第1實施型態之符號相同者為相同元件，故省略說明。
第4圖及第5圖為用來說明本實施型態之複數個半導體晶片之連接方法之各程序的模式圖。此外，在第4圖及第5圖中，1為絕緣基材，2為第一半導體晶片，12為第二半導體晶片，2a,12a為接合焊墊，3為樹脂被膜，4為配線溝槽，5為鍍層觸媒，6為無電解鍍層薄膜。
在本實施型態之製造方法中，如第4(A)圖所示，首先於既定之晶片搭載區域上準備好配置有第一半導體晶片2及第二半導體晶片12的絕緣基材1。
此外，第一半導體晶片2及第二半導體晶片12於絕緣基材1之表面之既定晶片搭載區域藉由接著劑等來固定，接著面不殘留間隙，使用樹脂埋住。此外，同樣在此情況下，為了避免於半導體晶片2,12之矽晶圓(特別是其切割後之側面)直接形成由無電解鍍層薄膜6所構成之配線17，使用樹脂等絕緣性有機材料、以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等預先覆蓋至少要形成上述配線17之半導體晶片2,12之部分，則會更好。
然後，如第1(B)圖所示，第一半導體晶片2、第二半導體晶片12及絕緣基材1之表面形成樹脂被膜3(被膜形成程序)。
樹脂被膜3之形成方法只要能在絕緣基材1及半導體晶片2，及第2半導體晶片12的表面，至少連接接合焊墊2a,2a與接合焊墊12a,12a之路徑之絕緣基材1及半導體晶片2,12之表面形成樹脂被膜3即可，沒有特別限定。
接著，如第4(C)圖所示，形成深度等於或大於所形成之樹脂被膜3之厚度的配線溝槽4(配線溝槽形成程序)。配線溝槽4沿著用來連接第一半導體晶片2之表面之接合焊墊2a,2a與第二半導體晶片12之表面之接合焊墊12a,12a的路徑，藉由雷射加工而形成。
以此方式，沿著用來連接接合焊墊2a,2a與接合焊墊12a,12a之路徑形成配線溝槽4。藉由以此種方式形成配線溝槽4，在後面之程序中僅於形成有配線溝槽5之部分之表面附加無電解鍍層薄膜6，以形成配線。
接著，如第5(A)圖所示，至少在形成有配線溝槽4之表面附著鍍層觸媒5(觸媒附著程序)。藉由此種觸媒附著處理，在配線溝槽4之表面及樹脂被膜3之表面附著鍍層觸媒5。
接著，如第5(B)圖所示，藉由使其在既定之液體中溶解或膨脹浸潤，從絕緣基材1、第一半導體晶片2及第二半導體晶片12之表面去除樹脂被膜3(被膜去除程序)。根據此程序，可僅於形成有絕緣基材1第一半導體晶片2及第二半導體晶片12之表面之配線溝槽4的部分的表面殘留鍍層觸媒5。另一方面，在形成有配線溝槽4之部分以外之表面所附著的鍍層觸媒5可在去除樹脂被膜3時去除。
接著，如第5(C)圖所示，僅於鍍層觸媒5所殘留之部位形成無電解鍍層薄膜6(鍍層處理程序)。藉由此種程序，僅在形成有配線溝槽4之部分有無電解鍍層薄膜6析出。藉由此種無電解鍍層薄膜6，形成用來將接合焊墊2a,2a與接合焊墊12a,12a作電子連接的配線17。
藉由此種鍍層處理，僅在連接第一半導體晶片2之接合焊墊2a,2a與第二半導體晶片12之接合焊墊12a,12a之路徑之表面上有鍍層觸媒5殘留之部分，有無電解鍍層薄膜6析出。藉此，形成用來連接接合焊墊2a,2a與接合焊墊12a,12a之配線17。經過此種程序，如第5(C)圖所示，形成用來將搭載於絕緣基材1表面之第一半導體晶片2與第二半導體晶片12作電子連接的構成體。
根據此種連接方法，為了跨越半導體晶片所產生之段差而形成配線，可以簡易之方法將基板上之複數個半導體晶片作電子連接。於是，集合複數個半導體晶片之多晶片模組等之製造可輕易實現。
(第3實施型態)
根據非專利文獻1中所記載之方法，用來連接配置於絕緣基材表面之半導體晶片與絕緣基材的配線為沿著半導體晶片之上面、半導體晶片之側壁及絕緣基材之表面的型態，橫跨絕緣基材表面與半導體晶片表面而形成立體形狀。亦即，於絕緣基材表面具有半導體晶片之立體構造物之表面上，配線橫跨相鄰接之兩個以上的面，設置成立體形狀。於是，以此種方式形成之立體配線連接至絕緣基材及半導體晶片之表面，在該表面上以蜿蜒之狀態形成，因此，相較於以打線接合技術形成之配線，有較高之強度，可在進行樹脂封止時抑制樹脂壓力對其造成損壞。
不過，根據本發明團隊之探討，藉由非專利文獻1中所記載之方法而得到的立體配線如第7圖所示，構成配線之鍍層金屬與基材表面或晶片表面連接，僅為搭載於該表面上之狀態，所以，配線相對於基材及晶片之接著強度較弱，會有配線容易從基材表面或晶片表面脫落或在容易在表面上偏移的問題。尤其，立體構造物具有突出至外部之突起角部，作為此種角部，當配線通過在晶片上面與側壁交叉之角部之類的角部時，配線變成突出至相對於該角部為更靠近外部之處的狀態，所以，若配線之接著強度較弱，配線更容易因外力脫落或偏移。又，當鍍層金屬僅搭載於基材等表面上時，鍍層金屬之大部分露出於外部，所以，配線容易因熱而反覆膨脹收縮或受到振動等物理外力而斷裂，有可能損壞作為電子元件之可靠性。此種問題在配線之線寬越細越窄時，越容易發生。
本發明為根據上述之探討結果而產生的發明。所以，本發明之另一目的為，於表面具有配線之半導體裝置等立體構造物上，提高配線對該立體構造物之接著強度，並且，減少配線之脫落、偏移、斷裂等問題。以下將詳細說明本發明之第3實施型態。
首先，在上述第1實施型態及第2實施型態中，當形成深度與樹脂被膜之厚度相同的配線溝槽時，配線一般以下面之方式形成。換言之，如第8(A)圖所示，在被膜形成程序中，於絕緣基材101(也可以是半導體晶片，但為了方便以絕緣基材作為代表，以下情況皆相同)之表面形成樹脂被膜102。接著，如第8(B)圖所示，在配線溝槽形成程序中，使用雷射加工技術沿著配線路徑形成深度與樹脂被膜102之厚度相同的配線溝槽103。此時，在絕緣基材101之表面，未形成配線用凹溝。亦即，絕緣基材101之表面沒有削減。接著，如第8(C)圖所示，在觸媒附著程序中，於配線溝槽103之表面及樹脂被膜102之表面附著鍍層觸媒104。鍍層觸媒104附著於絕緣基材101之表面。接著，如第8(D)圖所示，在被膜去除程序中，樹脂被膜102在既定之液體中溶解或膨脹浸潤，藉此被去除。然後，如第8(E)圖所示，在鍍層處理程序中，僅於鍍層觸媒104所殘留之部位藉由無電解鍍層使鍍層金屬105析出，形成配線106。鍍層金屬105於絕緣基材101之表面析出。
在此情況下，如第8(E)圖所示，作為構成配線106之配線用導體的鍍層金屬105與絕緣基材101之表面或半導體晶片之表面連接，變成搭載於該表面上之狀態。此狀態為與藉由上述非專利文獻1中所記載之方法所得到的配線(參照第7圖)相同的狀態。在此種狀態下，配線106相對於絕緣基材101及半導體晶片的接著強度較弱，配線106容易從絕緣基材101之表面或半導體晶片之表面脫落。又，配線106容易在絕緣基材101之表面或半導體晶片之表面上偏移。尤其，在絕緣基材101上封裝有半導體晶片之半導體裝置之類的立體構造物上，具有突出至外部之突起角部，作為此種角部，如第2(C)圖或第5(C)圖所示，當配線106通過半導體晶片之上面與垂直側壁交叉之角部時，配線106突出至相對於該角部為更靠近外部之處的狀態，所以，當配線106之接著強度較弱時，配線更容易因外力脫落或偏移。又，當鍍層金屬105僅搭載於絕緣基材101或半導體晶片之表面上時，鍍層金屬105之大部分露出於外部，所以，配線106容易因熱而反覆膨脹收縮或受到振動等物理外力而斷裂，有可能損壞作為電子元件之可靠性。
相對於此，在上述第1實施型態及第2實施型態中，當形成深度大於樹脂被膜之厚度的配線溝槽時，配線一般以下面之方式形成。換言之，如第9(A)圖所示，在被膜形成程序中，於絕緣基材101之表面形成樹脂被膜102。接著，如第9(B)圖所示，在配線溝槽形成程序中，使用雷射加工技術沿著配線路徑形成深度大於樹脂被膜102之厚度的配線溝槽103。此時，在絕緣基材101之表面，於配線溝槽103中有超過樹脂被膜102之厚度的部分形成配線用凹溝。接著，如第9(C)圖所示，在觸媒附著程序中，於配線溝槽103之表面及樹脂被膜102之表面附著鍍層觸媒104。鍍層觸媒104亦附著於配線用凹溝之中。接著，如第9(D)圖所示，在被膜去除程序中，樹脂被膜102在既定之液體中溶解或膨脹浸潤，藉此被去除。配線用凹溝之中的鍍層觸媒104殘留下來。然後，如第9(E)圖所示，在鍍層處理程序中，僅於鍍層觸媒104所殘留之部位藉由無電解鍍層使鍍層金屬105析出，形成配線106。鍍層金屬105於配線用凹溝之中析出，填充配線用凹溝。
在此情況下，如第9(E)圖所示，作為構成配線106之配線用導體的鍍層金屬105變成埋入絕緣基材101之表面或半導體晶片之表面上所具有之配線用凹溝之中的狀態。於是，配線106相對於絕緣基材101及半導體晶片的接著強度提高。結果，即使配線106通過突出至立體構造物外部之突起角部，也能減少配線106脫落或偏移的問題。又，由於鍍層金屬105埋入配線用凹溝之中，亦減少了配線106受到物理外力而斷裂的問題。
此外，第9(E)圖為配線106之實施例，其中，整個作為配線用導體之鍍層金屬105埋入配線用凹溝之中，而且，鍍層金屬105之表面與絕緣基材101之表面一致，沒有段差，然而本發明不受此限制，可如第10(a)圖所示，將整個鍍層金屬105埋入配線用凹溝之中，使鍍層金屬105之表面與絕緣基材101之表面不一致而產生段差，形成後退至配線用凹溝之內部的配線106。又，亦可如第10(b)圖所示，鍍層金屬105之一部分埋入配線用凹溝之中，形成鍍層金屬105之其他部分突出至絕緣基材101之表面外的配線106。又，如第10(c)圖所示，即使鍍層金屬105之其他部分突出至絕緣基材101之表面外的量相對上較多，只要鍍層金屬105之一部分埋入配線用凹溝之中，就屬於本發明之範圍，為產生本發明之作用的發明。
又，如第9(E)圖或第10(a)圖所示，整個配線用導體105埋入配線用凹溝之中的配線106可藉由採用CMP(化學機械研磨技術：Chemical Mechanical Polishing)處理的埋入配線之形成技術來得到。換言之，如第11(A)圖所示，在絕緣基材101之表面形成配線溝槽103作為配線用凹溝，接著，如第11(B)圖所示，埋入配線溝槽103，於配線溝槽103之內部及絕緣基材101之表面上形成配線用導體105，接著，如第11(C)圖所示，使用CMP技術去除配線溝槽103之外之配線用導體105，藉此，形成在配線用凹溝之中埋入整個配線用導體105的配線106。
於是，基於以上之理由，第3實施型態如第12圖所示，為表面具有配線106之立體構造物200，在立體構造物200之表面，形成配線用凹溝103，其橫跨立體構造物200之相互交叉之鄰接面200a,200b,200c之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸，與在上述配線用凹溝103之中埋入配線用導體105之至少一部分的立體構造物200有關聯。此外，亦可橫跨配線用凹溝103之全長而不將配線用導體105之至少一部分埋入配線用凹溝103之中，亦可埋入配線用凹溝103之全長中之一部分、幾個部分、某部分或斷續之部分。
立體構造物200之具體例大約包括以下幾種。
(1)如第1實施型態所示，絕緣基材上封裝有半導體晶片之半導體裝置(此外，如前所述，為了避免在半導體晶片之矽晶圓(特別是其切割側面)上直接形成作為無電解鍍層薄膜之配線，最好藉由樹脂等絕緣性有機材料、以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等預先被覆至少將形成上述配線之半導體晶片之部分。)
(2)具有立體形狀之電路基板
(3)多層電路基板
(4)於絕緣基材上以多段積層之狀態封裝半導體晶片的堆疊晶片組件(此外，在此情況下也是一樣，為了避免在半導體晶片之矽晶圓(特別是其切割側面)上直接形成作為無電解鍍層薄膜之配線，最好藉由樹脂等絕緣性有機材料、以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等預先被覆至少將形成上述配線之半導體晶片之部分。)
(5)構造為封裝於絕緣基材上之半導體晶片或未封裝於絕緣基材上之半導體晶片藉由絕緣性樹脂(此外，亦可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等。)被覆的半導體裝置(例如記憶體組件等)
(6)上述記憶體組件安裝於支持體之記憶卡
(7)構造為封裝於絕緣基材上之被動元件(例如電阻器、電容器、線圈、各種感測器等)或未封裝於絕緣基材上之被動元件藉由絕緣性樹脂(此外，亦可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )等為首之陶瓷等絕緣性無機材料等。)被覆的電子裝置(例如磁頭等)
(8)上述磁頭安裝於線束之磁頭模組
另外，在這些立體構造物200之表面，形成配線用導體105之至少其中一部分埋入配線用凹溝103之中的立體配線106。根據此種結構之立體構造物200，在橫跨立體構造物200之相互交叉之鄰接面(就第12圖來說，其為構成段差之上段之上面200a、構成段差之縱壁200b、構成段差之下段之上面200c)之間而延伸的配線用凹溝103之中，埋入配線用導體105之至少一部分，所以，即使在配線106之線寬較細較窄的情況下，配線106相對於立體構造物200之接著強度也會提高。結果，即使配線106通過突出至立體構造物200之外部的突起角部(就第12圖來說，其為上段之上面200a與縱壁200b交叉之角部)，也可減少配線106脫落或偏移的問題。又，配線用導體105至少有一部分埋入配線用凹溝103之中，所以，可減少配線106受到物理外力而斷裂的問題。
此外，配線106為設置於立體構造物200之表面的立體配線，連接至立體構造物200之表面並在該表面形成蜿蜒之狀態。於是，可不必考慮打線接合技術中之金線偏移之類的現象，使配線密度極高。又，在整個配線用導體105埋入配線用凹溝103之中的情況下，配線106難以受到外部之影響，可更有效地防止配線106脫落、偏移、斷裂的問題。
立體構造物200可為樹脂成形物，也可為無機絕緣性成形物。又，立體構造物200可先分別製作出每個部分再將其結合在一起，變成一體化。例如，如同半導體裝置，在絕緣基材上封裝半導體晶片，最後產生出整體具有段差之複合體。或者，立體構造物200可在一開始直接針對各部分一體成形。此種成形體可採用射出成形來技術製作，從生產效率之觀點而言是很好的選擇。關於立體構造物200為電路基板或為樹脂成形物時之材料及型態等之詳細說明，將說明如下。另一方面，若選擇使立體構造物200為無機絕緣性成形物，最好採用在玻璃陶瓷粉末等中混合分散有機接著劑、水性溶媒等之泥漿經過膠帶狀成形所得到之綠帶受到燒成後的陶瓷基板等各種陶瓷成形體等。
當立體構造物200為電路基板或樹脂成形物時，作為用來製造立體構造物200之材料，可使用過去一直用於電路基板之製造的各種有機基材成無機材料，並無特別限定。作為有機基材之具體例，包括由環氧樹脂、丙烯酸樹脂、聚碳酸酯樹脂、聚亞醯胺樹脂、聚硫化亞苯樹脂、聚亞苯醚樹脂、氰酸鹽樹脂、苯並噁秦樹脂、雙馬來醯亞胺樹脂等所構成之基材。
作為上述環氧樹脂，只要是構成可用來製造電路基板之各種有機基板的環氧樹脂即可，並無特別限定。具體地說，可使用丙二酚-A型環氧樹脂、丙二酚-F型環氧樹脂、丙二酚-S型環氧樹脂、芳烷基環氧樹脂、酚醛型環氧樹脂、烷基酚醛型環氧樹脂、雙酚型環氧樹脂、萘型環氧樹脂、雙環戊二烯型環氧樹脂、和具有酚類與酚性羥基之芳香族乙醛發生之縮合物之環氧化物、異氰尿酸三縮水甘油酯、脂環式環氧樹脂等。再者，若要賦予難燃性，亦可使用溴化或進行過磷變性之上述環氧樹脂、含氮樹脂、含矽酮之樹脂等。又，作為上述環氧樹脂及樹脂，可單獨使用上述各環氧樹脂及樹脂，亦可組合兩種以上來使用。
當以上述各種樹脂來構成立體構造物200時，一般為了使其硬化，會使其含有硬化劑。作為上述硬化劑，只要是能夠當作硬化劑來使用之物質即可，沒有特別限定。具體地說，可使用雙氰胺、酚系硬化劑、酸無水物硬化劑、氨基三氮雜苯酚醛系硬化劑、氰酸鹽樹脂等。
作為上述酚系硬化劑，可使用酚醛型硬化劑、芳烷基型硬化劑、烯型硬化劑等。再者，若要賦予難燃性，亦可使用進行過磷變性之酚樹脂或進行過磷變性之氰酸鹽樹脂等。又，作為上述硬化劑，可單獨使用上述各硬化劑，亦可組合兩種以上來使用。
立體構造物200之表面於配線溝槽形成程序中藉由雷射加工技術，形成作為電路圖案之電路用凹部3，所以，宜使用對於100nm～600nm之波長區域之雷射光之吸收率(紫外線吸收率)良好之樹脂等。具體地說，可使用聚醯亞胺樹脂等。
可使立體構造物200含有填料。作為填料，可使用無機微粒子，亦可使用有機微粒子，沒有特別限定。藉由使其含有填料，可使填料露出於雷射加工部，提高填料之凹凸所產生之鍍層(導體5)與樹脂(立體構造物200)之間的密合度。
作為構成無機微粒子之材料，具體地說，可使用氧化鋁(Al2 O3 )、氧化鎂(MgO)、氮化硼(BN)、氮化鋁(AlN)、二氧化矽(SiO2 )、鈦酸鋇(BaTiO3 )、氧化鈦(TiO2 )等之高誘電率填充材料、硬肥粒鐵等磁性填充材料、氫氧化鎂(Mg(OH)2 )、氫氧化鋁(Al(OH)2 )、三氧化二銻(Sb2 O3 )、五氧化二銻(Sb2 O5 )、胍鹽、硼酸鋅、鉬化合物、錫酸鋅等之無機系難燃劑、滑石(Mg3 (Si4 O10 )(OH)2 )、硫酸鋇(BaSO4 )、碳酸鈣(CaCO3 )、雲母等。作為無機微粒子，可單獨使用上述無機微粒子，亦可組合兩種以上來使用。這些無機微粒子之熱傳導性、相對介電常數、難燃性、粒度分佈、色調之自由度等較高，所以，當要選擇性地發揮所要之功能時，可以進行適當搭配及粒度設計，輕易達到高填充狀態。又，雖然沒有特別限定，但宜使用小於絕緣層厚度之平均粒徑之填料，宜使用平均粒徑為0.01μm~10μm之填料，最好使用平均粒徑為0.05μm~5μm之填料。
又，關於上述無機微粒子，為了提高立體構造物200中之分散性，可使用矽烷耦合劑進行表面處理。又，關於立體構造物200，為了提高上述無機微粒子在立體構造物200中之分散性，可含有矽烷耦合劑。作為上述矽烷耦合劑，沒有特別限定。具體地說，可使用環氧矽烷系、氫硫基矽烷系、氨基矽烷系、乙烯基矽烷系、苯乙烯基矽烷系、三甲氧基矽烷系、丙烯酰氧基矽烷系、鈦酸鹽系等之矽烷耦合劑等。作為上述矽烷耦合劑，可單獨使用上述矽烷耦合劑，亦可組合兩種以上來使用。
又，關於立體構造物200，為了提高上述無機微粒子在立體構造物200中之分散性，可含有分散劑。作為上述分散劑，沒有特別限定。具體地說，可使用烷基醚系、山梨糖酯系、烷基聚醚胺系、高分子系等之分散劑等。作為上述分散劑，可單獨使用上述分散劑，亦可組合兩種以上來使用。
又，可作為填料來使用之有機微粒子之具體例包括橡膠微粒子等。
作為立體構造物200之型態，並無特別限定。具體地說，可為薄片、薄膜、預浸布、立體形狀之成形體等。立體構造物200之厚度也沒有特別限定，當其為薄片、薄膜、預浸布等物時，厚度可為10~2000μm，宜為10~500μm，10~200μm更好，20~200μm又更好，20~100μm甚至更好。
又，關於立體構造物200，可使用鑄模及框板等放入將成為立體構造物200之材料，再對其加壓，使其硬化，藉此，形成立體形狀之成形體，亦可沖壓出薄片、薄膜或預浸布，將沖壓出的物體硬化或藉由加熱加壓使其硬化，來形成立體形狀之成形體。
如第12圖所示，可在立體構造物200之表面設置焊墊部107。此焊墊部107為與立體構造物200之內部電路導通的電極焊墊或用來在立體構造物200上封裝零件的接合焊墊等。當配線106與電極焊墊107連接時，配線106與導通至電極焊墊107之立體構造物200之內部電路連接。另一方面，當配線106與接合焊墊107連接時，配線106與封裝於接合焊墊107上之零件連接。
在此情況下，如第13圖所示，可將焊墊部107與配線106以一體之狀態一起埋入立體構造物200之表面(埋入焊墊部107之一部分或全部)。將焊墊部107與配線106以一體之狀態一起埋入立體構造物200之表面的方法可如同前述之第9(B)圖之配線溝槽形成程序，連接至配線溝槽103並形成焊墊部專用的孔，又如同前述之第9(C)圖之觸媒附著程序，使焊墊部專用的孔中附著有鍍層觸媒104，又如同前述之第9(D)圖之被膜去除程序，也使焊墊部專用的孔中的鍍層觸媒104殘留下來，然後，如同前述之第9(E)圖之鍍層處理程序，也使無電解鍍層技術所產生之鍍層金屬105在焊墊部專用的孔中析出，形成焊墊部107。此外，在第13圖中，符號300代表於立體構造物200之焊墊部107上封裝半導體晶片等零件110的半導體裝置。
另一方面，如第14圖所示，可將焊墊部107與配線106分開，在立體構造物200之表面形成配線106後再搭載焊墊部107。不過，在此情況下，如第14(a)圖所示，當將整個配線用導體105埋入配線用凹溝103之中時，配線用導體105未突出至立體構造物200之表面之外，所以，僅配線106之端部與焊墊部107之端部互相配合，配線用導體105未與焊墊部107有良好接觸，於是引起連接不良之情況。因此，如第14(b)圖所示，當將整個配線用導體105埋入配線用凹溝103之中時，使焊墊部107以既定量重合於配線106之端部之上，使配線用導體105與焊墊部107確實相互接觸，是重要關鍵。
此外，在第12圖之範例中，配線106橫跨立體構造物200之相互交叉之3個鄰接面200a,200b,200c之間而延伸，不過，本發明不受此限制，亦可橫跨2個鄰接面200a,200b以及200b,200c之間而延伸，且亦可橫跨4個以上之鄰接面而延伸。又，配線106可通過突起之角部，可通過凹入之角部，亦可通過兩者。又，配線106不限於直線狀，亦可以曲線狀延伸，如第12圖所例示，亦可形成分歧。又，在第12圖中，亦可橫跨構成段差之垂直側面之間而沿著水平方向延伸。
(第4實施型態)
在此對與第3實施型態相同或相當之元件使用相同符號，僅說明第4實施型態之特徵部分。第4實施型態如第15圖所示，為以上述第3實施型態之立體構造物200之結構為前提且含有多層電路基板120之立體構造物200，此多層電路基板120之側面之縱壁200b與內部電路120a…120a之端部(圖中表示為黑圓點)相對，配線106與藉由與此內部電路120a…120a之端部連接而使多層電路基板120之內部電路120a…120a產生層間連接的立體構造物200有關聯。此外，在此情況下也是一樣，可不用橫跨配線用凹溝之全長將配線用導體之至少一部分埋入配線用凹溝之中，亦可埋入配線用凹溝之全長中之一部分、幾個部分、某部分或斷續之部分。又，配線用凹溝橫跨立體構造物之相互交叉之鄰接面之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸。
根據此種結構之立體構造物200，配線106作為用來產生層間連接之外部配線來使用。亦即，作為多層電路基板120中之層間連接之技術，過去有形成作為層間連接專用孔之導通孔的習知技術。然而，由於將導通孔配置於多層電路基板120之內部電路上，所以，內部電路之配線有效面積減少了該導通孔之配置面積的量，形成了問題。在第4實施型態之立體構造物200中，通過多層電路基板120之側面之縱壁200b之埋入型配線106產生多層電路基板120之層間連接，所以，可避免此問題。又，可在多層電路基板120之縱壁200b上輕易設置用來產生層間連接之外部配線106。
此外，如第15圖所例示，通過多層電路基板120之側面之縱壁200b的配線106為了與各層之內部電路120a連接，可呈蜿蜒狀態，可斜斜通過縱壁200b，亦可不與既定層之內部電路連接而通過。
(第5實施型態)
接著，將說明當立體構造物為封裝於絕緣基材之半導體晶片被絕緣性樹脂(如前所述，可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )為首之陶瓷等絕緣性無機材料等。)被覆的結構時之實施型態。此外，與先前說明過之實施型態相同或相當的部分將省略說明，僅以第5實施型態之特徵部分為中心來進行說明。第16圖為表示第5實施型態之立體構造物500的剖面圖。此立體構造物500為封裝於絕緣基材501上之半導體晶片503被絕緣性樹脂505被覆的半導體裝置。另外，於此半導體裝置500之表面設置立體配線511。換言之，形成橫跨半導體裝置500之相互交叉之鄰接面之間而延伸的配線用凹溝507，在該配線用凹溝507之中埋入配線用導體510之至少其中一部分，藉此，立體配線511設置於半導體裝置500之表面。半導體晶片503可使用絕緣性樹脂505被覆整體，亦可僅被覆形成配線511之部分或其中一部分。此外，在此情況下也是一樣，可不用橫跨配線用凹溝之全長將配線用導體之至少一部分埋入配線用凹溝之中，亦可埋入配線用凹溝之全長中之一部分、幾個部分、某部分或斷續之部分。又，配線用凹溝橫跨立體構造物之相互交叉之鄰接面之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸。
與絕緣性樹脂505之表面相對的，是其中一端到達半導體晶片503之接合焊墊504的聯絡線512之另一端，配線511連接此聯絡線512之另一端與絕緣基材501之電極焊墊502。
此種半導體裝置500可藉由以下之製造方法來製造。
首先，如第17(A)圖所示，使用絕緣性樹脂505被覆封裝於絕緣基材501上之半導體晶片503(樹脂被覆程序)。在此，關於可使用之絕緣性樹脂505，只要是一般習知可為了保護半導體晶片而封止半導體晶片之表面的樹脂封止材料即可，沒有特別限定。又，關於使用絕緣性樹脂505被覆半導體晶片503的技術，只要是一般習知可為了保護半導體晶片而封止半導體晶片之表面的樹脂封止技術即可，沒有特別限定。
接著，如第17(B)圖所示，在絕緣性樹脂505之表面及絕緣基材501之表面形成樹脂被膜506(被膜形成程序)。在此，關於可使用之樹脂被膜506，可為與於第1實施型態所說明過之樹脂被膜3相同的物質，沒有特別限定。
接著，如第17(C)圖所示，藉由從絕緣性樹脂505之外表面那側及絕緣基材501之外表面那側進行雷射加工，形成深度大於樹脂被膜506之厚度且含有通往至半導體晶片503之接合焊墊504之連接孔508的配線溝槽507(配線溝槽形成程序)。
接著，如第18(A)圖所示，在配線溝槽507之表面，與第1實施型態相同，附著鍍層觸媒509或其前驅體(觸媒附著程序)。
接著，如第18(B)圖所示，樹脂被膜506與第1實施型態相同，藉由溶解或膨脹浸潤來去除(被膜去除程序)。
接著，如第18(C)圖所示，去除樹脂被膜506之後，僅在鍍層觸媒509或其前驅體所形成之鍍層觸媒509所殘留下來之部位，與第1實施型態相同，形成無電解鍍層薄膜510(鍍層處理程序)。此時，形成於連接孔508之內部的無電解鍍層薄膜510構成聯絡線512。此外，可不形成連接孔508，而預先設置作為導體之聯絡線512，其從半導體晶片503之接合焊墊504延伸至外部。
如同第5實施型態，當立體構造物500為封裝於絕緣基材501上之半導體晶片503被絕緣性樹脂505被覆的構造時，不會在作為矽晶圓之半導體晶片503之表面形成配線用凹溝507，而在絕緣性樹脂505之表面形成配線用凹溝507，所以，具有容易形成該配線用凹溝507的優點。
又，配線511為透過聯絡線512將半導體晶片503之接合焊墊504與絕緣基材501之電極焊墊502作電子連接的配線。
此外，上述製造方法使用於在絕緣基材501上被封裝的半導體晶片503，但本發明不受此限制，此製造方法亦可同樣應用於不封裝絕緣基材上之半導體晶片、封裝於絕緣基材上之被動元件或不封裝於絕緣基材上之被動元件等。
又，上述製造方法形成了配線溝槽507，其含有通往至半導體晶片503之接合焊墊504的連接孔508，但本發明不受此限制，此製造方法亦可同樣應用於與其中一端通往至半導體晶片之接合焊墊的連接線之另一端連通的配線溝槽一端通往半導體晶片或被動元件之連接線之另一端連通的配線溝槽，或含有通往至半導體晶片或被動元件之連接孔的配線溝槽等。
(第6實施型態)
接著，將說明當立體構造物為封裝於絕緣基材之半導體晶片被絕緣性樹脂(如前所述，可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )為首之陶瓷等絕緣性無機材料等。)被覆的結構時之其他實施型態。此外，與先前說明過之實施型態相同或相當的部分將省略說明，僅以第6實施型態之特徵部分為中心來進行說明。第19(a)圖至第19(c)圖為表示第6實施型態之立體構造物600之相異實施例的剖面圖。此立體構造物600在絕緣基材601上以多段積層之狀態封裝複數個半導體晶片603，該半導體晶片603為使用絕緣性樹脂605被覆的半導體裝置。半導體晶片603可使用絕緣性樹脂605被覆整體，亦可僅被覆形成配線611之部分或其中一部分。此外，在此情況下也是一樣，可不用橫跨配線用凹溝之全長將配線用導體之至少一部分埋入配線用凹溝之中，亦可埋入配線用凹溝之全長中之一部分、幾個部分、某部分或斷續之部分。又，配線用凹溝橫跨立體構造物之相互交叉之鄰接面之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸。
另外，與絕緣性樹脂605之表面相對的是，其中一端通往至半導體晶片603的連接線612的另一端，配線611藉由連接這些連接線612之另一端連接複數個半導體晶片603。
在第6實施型態中，立體構造物600為在多晶片模組中進一步力求緊緻化與高密度化之堆疊晶片組件。
另外，在堆疊晶片組件600之側面之縱壁與上面形成用來在晶片之間作連接的外部配線611。
根據此種結構之堆疊晶片組件600，配線611取代習知之直通矽晶穿孔技術或多段打線接合技術，作為用來在晶片之間作連接的外部配線來使用。亦即，關於複數個半導體晶片603受到多段積層之堆疊晶片組件600中之晶片間連接之技術，已公開的有直通矽晶穿孔技術及多段打線接合技術。然而，在直通矽晶穿孔技術中，將穿孔配置於半導體晶片603之電路上，所以，晶片603中之電路之配線有效面積減少了該穿孔之配置面積的量，形成了問題。又，在多段打線接合技術中，如同【先前技術】中所敘述，缺乏可靠性，並且，有封裝面積變大而無法得到高密度化的問題。在第6實施型態之堆疊晶片組件600中，於堆疊晶片組件600之側面之縱壁及上面形成用來在晶片之間作連接的埋入型外部配線611，此外部配線611透過連接線612，連接內建於堆疊晶片組件600之內的複數個晶片，所以，可避免這些問題。
此外，第19(a)圖表示，堆疊晶片組件600之最上部之絕緣性樹脂605之厚度較薄，堆疊晶片組件600之上面之外部配線611直接連接至最上層之晶片603。
又，第19(b)圖表示，堆疊晶片組件600之最上部之絕緣性樹脂605之厚度較厚，所以，在堆疊晶片組件600之上面之外部配線611上形成通往至最上層之晶片603的垂直孔型連接孔，形成於該連接孔(垂直孔)之內部的無電解鍍層薄膜構成連接線612。此外，亦可不形成連接孔(垂直孔)而預先設置從半導體晶片603延伸至外部(垂直方向)並作為導體的連接線612。
又，第19(c)圖表示，堆疊晶片組件600之最上部之絕緣性樹脂605之厚度較厚，所以，在堆疊晶片組件600之側面之縱壁之外部配線611上形成通往至最上層之晶片603的水平孔型連接孔，形成於該連接孔(水平孔)之內部的無電解鍍層薄膜構成連接線612。此外，在此情況下也是一樣，亦可不形成連接孔(水平孔)而預先設置從半導體晶片603延伸至外部(水平方向)並作為導體的連接線612。
此外，在第19(a)圖至第19(c)圖中，符號607代表配線用凹溝，符號610代表配線用導體。
(第7實施型態)
接著，將說明當立體構造物為封裝於絕緣基材之半導體晶片被絕緣性樹脂(如前所述，可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )為首之陶瓷等絕緣性無機材料等。)被覆的結構時之另一實施型態。此外，與先前說明過之實施型態相同或相當的部分將省略說明，僅以第7實施型態之特徵部分為中心來進行說明。第20圖為表示第7實施型態之立體構造物700的剖面圖。此立體構造物700為記憶體組件720安裝於支持體750的記憶卡。記憶體組件720為在絕緣基材701上封裝半導體晶片703且該半導體晶片703使用絕緣性樹脂705被覆的構造。半導體晶片703可使用絕緣性樹脂705被覆整體，亦可僅被覆形成配線711之部分或其中一部分。此外，在此情況下也是一樣，可不用橫跨配線用凹溝之全長將配線用導體之至少一部分埋入配線用凹溝之中，亦可埋入配線用凹溝之全長中之一部分、幾個部分、某部分或斷續之部分。又，配線用凹溝橫跨立體構造物之相互交叉之鄰接面之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸。
在此記憶卡700中，於記憶體組件720之表面及支持體750之表面，形成配線用導體710之至少一部分埋入配線用凹溝707之中的立體配線711。亦即，在記憶卡700之表面，形成橫跨記憶卡700之相互交叉之鄰接面之間而延伸的配線用凹溝707，在上述配線用凹溝707之中埋入配線用導體710之至少一部分。此外，在第20圖中，符號715代表與外部機器作電子連接的焊墊部。
在此種結構之記憶卡700中，可以不要卡片外殼，使作為商品之記憶卡更加緊緻化。
(第8實施型態)
接著，將說明當立體構造物為被動元件被絕緣性樹脂(如前所述，可不使用絕緣性樹脂，而使用以二氧化矽(SiO2 )為首之陶瓷等絕緣性無機材料等。)被覆的結構時之實施型態。此外，與先前說明過之實施型態相同或相當的部分將省略說明，僅以第8實施型態之特徵部分為中心來進行說明。第21圖為表示第8實施型態之立體構造物800的剖面圖。此立體構造物800為磁頭820安裝於線束850的磁頭模組。磁頭820為作為被動元件之磁性感測器830使用絕緣性樹脂805被覆的電子裝置。磁性感測器830可使用絕緣性樹脂805被覆整體，亦可僅被覆形成配線811之部分或其中一部分。此外，在此情況下也是一樣，可不用橫跨配線用凹溝之全長將配線用導體之至少一部分埋入配線用凹溝之中，亦可埋入配線用凹溝之全長中之一部分、幾個部分、某部分或斷續之部分。又，配線用凹溝橫跨立體構造物之相互交叉之鄰接面之間或在平面或曲面(包含彎曲面、凹面、凸面、組合這些曲面之曲面等)延伸。
在此磁頭模組800中，於磁頭820之表面及線束850之表面，形成配線用導體810之至少一部分埋入配線用凹溝807之中的立體配線811。亦即，在磁頭模組800之表面，形成橫跨磁頭模組800之相互交叉之鄰接面之間而延伸的配線用凹溝807，在上述配線用凹溝807之中埋入配線用導體810之至少一部分。
在此磁頭模組800中，與絕緣性樹脂805之表面相對的，是其中一端通往至磁性感測器830的連接線812之另一端，因此，配線811為透過連接線812與作為被動元件之磁性感測器830作電子連接的配線。
不在作為被動元件之磁性感測器830之表面形成配線用凹溝807，而在絕緣性樹脂805之表面形成配線用凹溝807，所以，具有容易形成該配線用凹溝807的優點。
在此磁頭模組800中，電子裝置為磁頭820，所以，在磁頭820之表面，形成配線用導體810之至少一部分埋入配線用凹溝807之中的立體配線811。
又，若以磁頭820安裝於線束850之整個磁頭模組800來看，在磁頭模組800之表面，形成配線用導體810之至少一部分埋入配線用凹溝807之中的立體配線811。
此外，在第8實施型態中，作為被動元件之磁性感測器830於未封裝於絕緣基材上之狀態使用絕緣性樹脂805來被覆，不過，本發明不受此限制，磁性感測器830亦可在封裝於絕緣基材上之狀態使用絕緣性樹脂805來被覆。
以上已詳細說明過本發明之實施型態，上述之說明為發明之所有層面之舉例說明，本發明並不受到以上之限定。未曾舉例說明出之無數變形例被想當然地認為不脫離本發明之範圍。
如上所述，本說明書揭示本發明之各種型態。在此將其中之主要型態整理如下。
本發明之其中一層面為，一種半導體晶片之封裝方法，用來將配置於絕緣基材表面之半導體晶片之表面所具有之接合焊墊電性連接至形成於上述絕緣基材表面之上述接合焊墊所對應之電極焊墊上，其特徵在於：包括在連接上述接合焊墊與上述電極焊墊之線路之表面形成樹脂被膜的被膜形成程序、沿著用來連接上述接合焊墊與上述電極焊墊之線路對深度等於或大於上述樹脂被膜之厚度的配線溝槽進行雷射加工以形成之的配線溝槽形成程序、於上述配線溝槽之表面附著鍍層觸媒或其前驅體的觸媒附著程序、在既定之液體中溶解或膨脹浸潤上述樹脂被膜以去除之的被膜去除程序及去除上述樹脂被膜後僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜的鍍層處理程序。
根據此半導體晶片之封裝方法，將配置於絕緣基材表面之半導體晶片與絕緣基材表面之電極連接起來的配線可以沿著半導體晶片之壁面與絕緣基材表面的狀態，形成於絕緣基材表面及半導體晶片表面。以此種方式形成之配線由於形成於絕緣基材或半導體晶片之表面，相較於使用打線接合技術形成之配線，強度較高。又，當進行樹脂封止時，也不會因為樹脂壓力而受到損壞。又，藉由採用雷射加工，可以簡易之程序形成正確之配線。
在上述半導體晶片之封裝方法中，宜將所形成之上述無電解鍍層薄膜作為電極來使用，並且，宜進一步包括藉由進行電解鍍層將電路厚膜化之電解鍍層程序。由於僅藉由無電解鍍層技術使薄膜變厚，比較費時，根據電解鍍層程序，可在短時間內進行無電解鍍層，形成薄膜之配線，之後，可將所形成之無電解鍍層薄膜作為供電電極來使用，所以，可在短時間內使薄膜變厚。
在上述半導體晶片之封裝方法中，上述樹脂被膜宜含有螢光性物質，並且，宜進一步包括在上述被膜去除程序之後與上述鍍層處理程序之前使用來自上述螢光性物質之發光檢查是否有被膜去除不良的檢查程序。根據此檢查程序，由於可確認被膜是否去除不良，可防止不需要之部分在鍍層薄膜上形成。
在上述半導體晶片之封裝方法中，上述樹脂被膜為可在既定之液體中膨脹浸潤而剝離之膨潤性樹脂，具有容易去除之優點。
在上述半導體晶片之封裝方法中，上述樹脂被膜之厚度宜在10μm以下。其理由為，若厚度過厚，在樹脂被膜藉由雷射加工以去除一部分時會有尺寸精度下降的傾向，若厚度過薄，會有難以形成均勻膜厚之被膜的傾向。
在上述半導體晶片之封裝方法中，上述樹脂被膜宜在上述絕緣基材表面塗佈彈性體之懸浮液或乳化液之後進行乾燥而形成。
在上述半導體晶片之封裝方法中，上述樹脂被膜宜將形成於支持基材上之膨潤性樹脂被膜轉印至上述絕緣基材表面而形成。
本發明之其他層面為一種半導體裝置，其特徵在於：具有接合焊墊之半導體晶片配設於絕緣基材表面，上述接合焊墊藉由形成於上述半導體晶片之表面及上述絕緣基材表面之鍍層薄膜，連接至形成於上述絕緣基材表面的電極焊墊。
本發明之另一層面為一種半導體晶片之連接方法，用來使配置於絕緣基材表面之複數個半導體晶片上所具有之接合焊墊相互作電性連接，其特徵在於：包括在連接形成於第一半導體晶片之接合焊墊與形成於第二半導體晶片之接合焊墊之線路之表面形成樹脂被膜的被膜形成程序、沿著上述線路對深度等於或大於上述樹脂被膜之厚度的配線溝槽進行雷射加工以形成之的配線溝槽形成程序、於上述配線溝槽之表面附著鍍層觸媒或其前驅體的觸媒附著程序、在既定之液體中溶解或膨脹浸潤上述樹脂被膜以去除之的被膜去除程序及去除上述樹脂被膜後僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜的鍍層處理程序。根據此半導體晶片之連接方法，可超越半導體晶片所產生之段差而形成配線，所以，可以簡易之方法使基板上之複數個半導體晶片相互作電子連接。於是，可實現多晶片模組等製造。
本發明之另一層面為一種立體構造物，其為表面具有配線之立體構造物，其特徵在於：在立體構造物之表面，形成橫亙於立體構造物相互交叉之鄰接面之間或者在平面或曲面中延伸之配線用凹溝，在上述配線用凹溝之中埋入配線用導體之至少其中一部分。根據此立體構造物，在橫跨立體構造物之相互交叉之鄰接面之間而延伸的配線用凹溝之中，埋入配線用導體之至少一部分，所以，即使在配線之線寬較細較窄的情況下，配線相對於立體構造物之接著強度也能提高。結果，即使配線通過突出至立體構造物之外部的突出角部，也能減少配線脫落或偏移的問題。又，鍍層金屬之一部分埋入配線用凹溝之中，所以，也減少了配線受到物理外力而斷裂的問題。
此外，配線為設置於立體構造物之表面的立體配線，可說是連接至立體構造物之表面而形成蜿蜒狀。於是，不必考慮打線接合技術中之金線偏移現象，可使配線密度極高。又，配線用導體可一部分埋入配線用凹溝之中，亦可使配線用導體之其他部分位於立體構造物之表面之外。當然，若整個配線用導體埋入配線用凹溝之中，配線難以受到來自外部之影響，可進一步有效地防止配線脫落、偏移、斷裂之問題。在此情況下，配線用導體之表面可與立體構造物之表面一致而無段差，又，亦可相對於立體構造物之表面更後退至配線用凹溝之內部。
在上述立體構造物中，於立體構造物之表面設置焊墊部，當配線與此焊墊部連接時，配線將與上述焊墊部導通的立體構造物之內部電路或封裝於上述焊墊部之零件等連接起來。
在上述立體構造物中，立體構造物包含多層電路基板，在此多層電路基板之側面之縱壁有內部電路之端部相對，當配線藉由與此內部電路之端部連接對多層電路基板之內部電路進行層間連接時，配線取代習知之形成作為層間連接專用孔之導通孔的技術，作為用來產生層間連接之外部配線來使用。原來在形成習知之導通孔的技術中，內部電路之配線有效面積減少了將導通孔配置於多層電路基板之內部電路的面積的量，形成了問題，現在外部配線可以避免該問題。又，可輕易在多層電路基板之縱壁上設置用來產生層間連接之外部配線。
在上述立體構造物中，當立體構造物為於絕緣基材上封裝半導體晶片之半導體裝置時，於絕緣基材之表面及半導體晶片之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。另外，在該情況下之配線如前所述，為將配置於絕緣基材上之半導體晶片之表面所設置之接合焊墊與形成於上述絕緣基材表面之電極焊墊作電子連接的配線。
此外，立體構造物之其他具體例包括立體形狀之電路基板、多層電路基板、於絕緣基材上以多段積層之狀態封裝複數個半導體晶片的堆疊晶片組件、封裝於絕緣基材上之半導體晶片或未封裝於絕緣基材上之半導體晶片使用絕緣性樹脂被覆的半導體裝置(例如記憶體組件)、上述記憶體組件安裝於支持體上之記憶卡、封裝於絕緣基材上之被動元件(例如電阻器、電容器、線圈、各種感測器等)或未封裝於絕緣基材上之被動元件使用絕緣性樹脂被覆的電子裝置(例如磁頭等)、上述磁頭安裝於線束之磁頭模組等。
在上述立體構造物上，透過上述焊墊部，封裝有半導體晶片之半導體裝置為在立體構造物上封裝半導體晶片之半導體裝置，在該立體構造物中，配線用導體之至少一部分埋入配線用凹溝之中的立體配線形成於表面。
在上述立體構造物中，當立體構造物為於絕緣基材上封裝半導體晶片且該半導體晶片以絕緣性樹脂被覆之半導體裝置時，在被覆絕緣基材之表面及半導體晶片之表面的絕緣性樹脂之表面上，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。不在作為矽晶圓之半導體晶片之表面形成配線用凹溝，而在絕緣性樹脂之表面形成配線用凹溝，所以，具有容易形成該配線用凹溝的優點。
在上述立體構造物中，當立體構造物為於絕緣基材上以多段積層之狀態封裝複數個半導體晶片且該半導體晶片以絕緣性樹脂被覆之半導體裝置時，於進一步力求多晶片模組之緊緻化及高密度化的堆疊晶片組件之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。
在上述立體構造物中，在絕緣性樹脂之表面，有其中一端到達半導體晶片之接合焊墊之連接線之另一端相對，當配線連接此聯絡線之另一端與絕緣基材之電極焊墊時，配線為透過聯絡線將半導體晶片之接合焊墊與絕緣基材之電極焊墊作電子連接的配線。
在上述立體構造物中，在絕緣性樹脂之表面，有其中一端到達半導體晶片之連接線之另一端相對，當配線藉由連接這些連接線之另一端來連接複數個半導體晶片時，配線取代習知之直通矽晶穿孔技術及多段打線接合技術，作為用來在半導體晶片之間進行連接的外部配線來使用。亦即，作為複數個半導體晶片受到多段積層之堆疊晶片組件中之半導體晶片間連接之技術，已公開的有直通矽晶穿孔技術及多段打線接合技術。然而，在直通矽晶穿孔技術中，將導通孔配置於半導體晶片之電路上，所以，晶片中之電路配線有效面積減少了該導通孔之配置面積的量，形成了問題。又，在多段打線接合技術中，如同在【先前技術】中所敘述，缺乏可靠性，並且，有封裝面積變大而無法達到高密度化的問題。相對於此種問題，在此結構之立體構造物中，於堆疊晶片組件之側面之縱壁及上面形成用來在晶片之間作連接的埋入型外部配線，此外部配線透過連接線，連接內建於立體構造物內之晶片，所以，可避免這些問題。
在上述立體構造物中，當半導體裝置為記憶體組件時，於記憶體組件之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。
本發明之另一層面為一種記憶卡，其為上述記憶體組件安裝於支持體上之記憶卡，其特徵在於：於記憶卡之表面，形成橫亙於記憶卡之相互交叉之鄰接面之間或者在平面或曲面中延伸之配線用凹溝，在上述配線用凹溝之中埋入配線用導體之至少其中一部分。根據此結構，於記憶卡之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。
在上述立體構造物中，當立體構造物為被動元件以絕緣性樹脂被覆之電子元件時，於電子裝置之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。不在被動元件之表面形成配線用凹溝，而在絕緣性樹脂之表面形成配線用凹溝，所以，具有容易形成該配線用凹溝的優點。
在上述立體構造物中，於絕緣性樹脂之表面，有其中一端到達被動元件之連接線之另一端相對，當配線連接此連接線之另一端時，配線為透過連接線與被動元件作電子連接的配線。
在上述立體構造物中，當電子元件為磁頭時，於磁頭之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。
本發明之又一層面為一種上述磁頭安裝於線束上之磁頭模組，其特徵在於：於磁頭模組之表面上，形成橫亙於磁頭模組之相互交叉之鄰接面之間或者在平面或曲面中延伸之配線用凹溝，在上述配線用凹溝之中埋入配線用導體之至少其中一部分。根據此結構，於磁頭模組之表面，形成配線用導體之至少一部分埋入配線用凹溝之中的立體配線。
本發明之又一層面為一種表面具有配線之立體構造物之製法，其特徵在於：包括以樹脂被覆封裝或不封裝於絕緣基材上之半導體晶片或被動元件的樹脂被覆程序、於絕緣性樹脂之表面及絕緣基材之表面形成樹脂被膜的被覆形成程序、從絕緣性樹脂之外表面側及絕緣基材之外表面側算起、具有大於樹脂被膜之厚度的深度、對與其中一端到達半導體晶片的連接線的另一端連通的配線溝槽，另一端到達半導體晶片或被動元件之連接線之另一端連通的配線溝槽或者含有到達半導體晶片或被動元件之小孔的配線溝槽進行雷射加工而形成之的配線溝槽形成程序、於上述配線溝槽之表面附著鍍層觸媒或其前驅體的觸媒附著程序、在既定之液體中溶解或膨脹浸潤上述樹脂被膜以去除之的被膜去除程序及去除上述樹脂被膜後，僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜的鍍層處理程序。根據此立體構造物之製法，不在作為矽晶圓之半導體晶片之表面或被動元件之表面形成配線用凹溝，而在絕緣性樹脂之表面形成配線用凹溝，所以具有容易形成該配線用凹溝的優點。
 【產業上可利性】
根據本發明，可使將配置於絕緣基材上之半導體晶片與絕緣基材表面之電極連接起來的配線或配置於絕緣基材表面之複數個半導體晶片在半導體晶片之壁面與絕緣基材表面呈現蜿蜒狀態，形成於絕緣基材表面及半導體晶片表面。以此種方式形成之配線，相較於使用打線接合技術所形成之配線，強度較高。所以，即使在進行樹脂封止時，也不會因為樹脂壓力而受到損壞。又，根據本發明，在表面上具有配線之半導體裝置等立體構造物中，配線相對於該立體構造物之接著強度提高，所以，可減少配線脫落、偏移、斷裂等問題。基於以上之理由，本發明在半導體晶片之封裝方法及表面具有配線之立體構造物之技術領域上，具有廣泛之產業可利性。
1．．．絕緣基材
1a．．．電極焊墊
2．．．半導體晶片、第一半導體晶片
2a．．．接合焊墊
3．．．樹脂被膜
4．．．配線溝槽
5．．．鍍層觸媒
6．．．無電解鍍層薄膜
7．．．配線
8．．．封止材料
10．．．構成體
11．．．絕緣基材
11a．．．電極焊墊
12．．．第二半導體晶片
12a．．．接合焊墊
13．．．金線
17．．．配線
20．．．半導體裝置
22．．．半導體晶片
22a．．．接合焊墊
101．．．絕緣基材
102．．．樹脂被膜
103．．．配線溝槽
104．．．鍍層觸媒
105．．．鍍層金屬、配線用導體
106．．．配線
107．．．焊墊部
110．．．零件
120．．．多層電路基板
120a．．．內部電路
200．．．立體構造物
200a．．．鄰接面
200b．．．鄰接面、縱壁
200c．．．鄰接面
300．．．半導體裝置
500．．．立體構造物、半導體裝置
501．．．絕緣基材
502．．．電極焊墊
503．．．半導體晶片
504．．．接合焊墊
505．．．絕緣性樹脂
506．．．樹脂被膜
507．．．配線用凹溝、配線溝槽
508．．．連接孔
509．．．鍍層觸媒
510．．．配線用導體、無電解鍍層薄膜
511．．．立體配線
512．．．聯絡線
600．．．立體構造物
601．．．絕緣基材
603．．．半導體晶片
605．．．絕緣性樹脂
607．．．配線用凹溝
610．．．配線用導體
611．．．配線
612．．．連接線
700．．．記憶卡
701．．．絕緣基材
703．．．半導體晶片
705．．．絕緣性樹脂
707．．．配線用凹溝
710．．．配線用導體
711．．．配線
715．．．焊墊部
720．．．記憶體組件
750．．．支持體
800．．．立體構造物
805．．．絕緣性樹脂
807．．．配線用凹溝
810．．．配線用導體
811．．．配線
812．．．連接線
820．．．磁頭
830．．．磁性感測器
850．．．線束
第1(A)圖至第1(C)圖為用來說明本發明第1實施型態之半導體晶片之封裝方法之前半程序的說明圖。
第2(A)圖至第2(C)圖為用來說明本發明第1實施型態之半導體晶片之封裝方法之後半程序的說明圖。
第3圖為使用本發明第1實施型態之半導體晶片之封裝方法所製得之半導體裝置的模式說明圖。
第4(A)圖至第4(C)圖為用來說明本發明第2實施型態之半導體晶片之連接方法之前半程序的說明圖。
第5(A)圖至第5(C)圖為用來說明本發明第2實施型態之半導體晶片之連接方法之後半程序的說明圖。
第6圖為以模式表示採用打線接合技術來連接配線之習知半導體裝置之封裝結構的模式圖。
第7圖為表示採用非專利文獻1所記載之方法所得到之立體配線之基材表面上之狀態的說明圖。
第8(A)圖至第8(E)圖為當形成深度與樹脂被膜之厚度相同的配線溝槽時與第1(B)圖至第1(C)圖或第4(B)圖至第4(C)圖及第2(A)圖至第2(C)圖或第5(A)圖至第5(C)圖對應的程序圖。
第9(A)圖至第9(E)圖為當形成深度大於樹脂被膜之厚度的配線溝槽時與第1(B)圖至第1(C)圖或第4(B)圖至第4(C)圖及第2(A)圖至第2(C)圖或第5(A)圖至第5(C)圖對應的程序圖。
第10(a)圖至第10(c)圖為表示在第9(E)圖所得到之配線之變形例的說明圖。
第11(A)圖至第11(C)圖為表示使用CMP處理技術之配線形成方法的程序圖。
第12圖為表示本發明第3實施型態之表面具有配線之立體構造物之重要部位的放大立體圖。
第13圖為表示上述立體構造物中之焊墊部之結構之具體例的放大剖面圖。
第14(a)圖為表示上述立體構造物中之焊墊部之結構之不良實施例的放大剖面圖，第14(b)圖為表示最佳實施例的放大剖面圖。
第15圖為表示本發明第4實施型態之表面具有配線之立體構造物之重要部位的放大立體圖。
第16圖為表示本發明第5實施型態之表面具有配線之立體構造物(封裝於絕緣基材中之半導體晶片以絕緣性樹脂被覆的半導體裝置)的剖面圖。
第17(A)圖至第17(C)圖為用來說明上述第5實施型態之立體構造物之製法之前半程序的剖面圖。
第18(A)圖至第18(C)圖為用來說明上述第5實施型態之立體構造物之製法之後半程序的剖面圖。
第19(a)圖至第19(c)圖為表示本發明第6實施型態之表面具有配線之立體構造物(封裝於絕緣基材中之半導體晶片以絕緣性樹脂被覆的半導體裝置)之相異實施例的剖面圖。
第20圖為表示作為本發明第7實施型態之表面具有配線之立體構造物(封裝於絕緣基材中之半導體晶片以絕緣性樹脂被覆的半導體裝置)之其中一具體實施例之記憶卡的剖面圖。
第21圖為表示作為本發明第8實施型態之表面具有配線之立體構造物(被動元件以絕緣性樹脂被覆之電子元件)之其中一具體實施例之磁頭的剖面圖。
1．．．絕緣基材
1a．．．電極焊墊
2．．．半導體晶片
2a．．．接合焊墊
7．．．配線
8．．．封止材料
10．．．構成體
20．．．半導體裝置

Claims (9)

  1. 一種半導體晶片之封裝方法，用來將配置於絕緣基材表面之半導體晶片之表面所具有之接合焊墊電性連接至形成於上述絕緣基材表面之上述接合焊墊所對應之電極焊墊上，其特徵在於包括：被膜形成程序，在連接上述接合焊墊與上述電極焊墊之線路之表面形成樹脂被膜；配線溝槽形成程序，沿著用來連接上述接合焊墊與上述電極焊墊之線路對深度等於或大於上述樹脂被膜之厚度的配線溝槽進行雷射加工以形成之；觸媒附著程序，於上述配線溝槽之表面附著鍍層觸媒或其前驅體；被膜去除程序，在鹼性溶液中溶解或膨脹浸潤上述樹脂被膜以去除之；及鍍層處理程序，去除上述樹脂被膜後，僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜。
  2. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，將所形成之上述無電解鍍層薄膜作為電極來使用，並且，進一步包括藉由進行電解鍍層將電路厚膜化之電解鍍層程序。
  3. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，上述樹脂被膜含有螢光性物質，並且，進一步包括在 上述被膜去除程序之後與上述鍍層處理程序之前使用來自上述螢光性物質之發光檢查是否有被膜去除不良的檢查程序。
  4. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，上述樹脂被膜之厚度在10μm以下。
  5. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，上述樹脂被膜由可在鹼性溶液中膨脹浸潤而剝離之膨潤性樹脂所構成。
  6. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，上述樹脂被膜是在上述絕緣基材表面塗佈彈性體之懸浮液或乳化液之後進行乾燥而形成。
  7. 如申請專利範圍第1項之半導體晶片之封裝方法，其中，上述樹脂被膜是將形成於支持基材上之膨潤性樹脂被膜轉印至上述絕緣基材表面而形成。
  8. 一種半導體晶片之連接方法，用來使配置於絕緣基材表面之複數個半導體晶片上所具有之接合焊墊相互作電性連接，其特徵在於包括：被膜形成程序，在連接形成於第一半導體晶片之接合焊墊與形成於第二半導體晶片之接合焊墊之線路之表面形成樹脂被膜；配線溝槽形成程序，沿著上述線路對深度等於或大於上述樹脂被膜之厚度的配線溝槽進行雷射加工以形成之；觸媒附著程序，於上述配線溝槽之表面附著鍍層觸媒 或其前驅體；被膜去除程序，在鹼性溶液中溶解或膨脹浸潤上述樹脂被膜以去除之；及鍍層處理程序，去除上述樹脂被膜後，僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜。
  9. 一種立體構造物之製法，其為表面具有配線之立體構造物之製法，其特徵在於包括：樹脂被覆程序，以絕緣性樹脂被覆封裝或不封裝於絕緣基材上之半導體晶片或被動元件；被覆形成程序，於絕緣性樹脂之表面及絕緣基材之表面形成樹脂被膜；配線溝槽形成程序，從絕緣性樹脂之外表面側及絕緣基材之外表面側算起，具有大於樹脂被膜之厚度的深度，對與其中一端到達半導體晶片或被動元件之連接線之另一端連通的配線溝槽或者含有到達半導體晶片或被動元件之小孔的配線溝槽進行雷射加工而形成之；觸媒附著程序，於上述配線溝槽之表面附著鍍層觸媒或其前驅體；被膜去除程序，在鹼性溶液中溶解或膨脹浸潤上述樹脂被膜以去除之；及鍍層處理程序，去除上述樹脂被膜後，僅於上述鍍層觸媒或由上述鍍層觸媒前驅體所形成之鍍層觸媒殘留之部位形成無電解鍍層薄膜。
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