TWI449664B - 用於奈米碳管電子發射陰極之固化黏合劑材料 - Google Patents

用於奈米碳管電子發射陰極之固化黏合劑材料 Download PDF

Info

Publication number
TWI449664B
TWI449664B TW095149033A TW95149033A TWI449664B TW I449664 B TWI449664 B TW I449664B TW 095149033 A TW095149033 A TW 095149033A TW 95149033 A TW95149033 A TW 95149033A TW I449664 B TWI449664 B TW I449664B
Authority
TW
Taiwan
Prior art keywords
cnt
cathode
ppsq
polymer
field emission
Prior art date
Application number
TW095149033A
Other languages
English (en)
Other versions
TW200738558A (en
Inventor
Yunjun Li
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200738558A publication Critical patent/TW200738558A/zh
Application granted granted Critical
Publication of TWI449664B publication Critical patent/TWI449664B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Conductive Materials (AREA)
  • Silicon Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)

Description

用於奈米碳管電子發射陰極之固化黏合劑材料
本申請案主張美國臨時申請序號第60/775,978號之優先權。
本發明概括地關於場發射裝置，且更特別的，關於奈米碳管於場發射上之用途。
奈米碳管(CNTs)係作為場發射顯示器(FEDs)用之冷陰極材料之有前途候選者。CNT FED可用低成本印刷技術構製，此對於現行類型的平面顯示器，諸如液晶顯示器(LCDs)及電漿顯示器(PDPs)，非常有競爭性。陰極一致性對於商業化CNT FEDs係一關鍵因素。關於場發射一致性的主要問題在於CNTs之一致分散，CNT像素之物理尺寸一致性，及陰極之活化一致性，係因為大多數印製的CNT陰極需要用不同的方法包括黏膠帶、滾筒、噴沙，等予以活化之故。活化方法可能向上提升CNTs或自黏合劑材料中解放CNTs而使彼等對所施加的電場回應而向上直立。
另一方面，對於用於三極管結構沉積成數十微米深度腔的CNT陰極，當前的活化方法不能具有像對平坦表面上的CNT陰極相同的一致性活化效用。為具有一致性活化，活化材料對該CNT陰極表面的一致壓力及物理上的一致性接觸對於得到一致的場發射陰極係非常重要者。但由於三極管結構之深腔，該活化材料可能不會用同樣壓力一致地接觸CNT陰極之表面，結果為非一致性之場發射。
一種新穎的黏合劑材料、無機聚合物，用於調配奈米碳管糊狀物。此材料可在200℃固化且具有高達500℃之熱穩定性。此黏合劑之低排氣使其成為長效型場發射裝置的良好候選者。由於此黏合劑具有更好的黏著力，一種來自液體形式的強黏著力可剝離聚合物可施用於CNT陰極上以達到對表面的均勻接觸和壓力之一致性活化。該可剝離的聚合物膜可用作活化層及罩層兩者以使用微影法構製場發射裝置用的高解析度圖案化奈米碳管陰極。
前文業以廣義地概述出本發明的特徵及技術優點以使下面的本發明詳細說明獲得更佳瞭解。本發明的其他特徵及優勢將於後文說明，其形成本發明申請專利範圍之主體。
在下面的說明中，陳述出眾多特別的細節諸如特別的陰極材料，等，以提供對本發明之徹底瞭解。不過，其對於熟諳此技者顯而易知著本發明可不用此等特別細節而付諸實施。於其他情況中，熟知的電路業經以方塊圖形式顯示以期不以非必要的細節混淆本發明。對於大部份而言，關於時間安排及類似物的細節都經省略，因為此等細節對於獲得本發明之徹底瞭解皆為不必要者且都在有相關技藝者的一般技巧之內者。
至此參考圖式，其中所繪示之元件不一定按比例顯示出且其中於數個圖式中，都將相同或相似的元件以相同的指示數字表出。
一種液體形式之聚合物材料經提出(2005年，6月16日美國專利公告第2005/0129858A1號)用於填充腔結構且在固化聚合物膜自陰極表面剝掉時，活化CNT陰極。若CNT之黏著力不足，諸如經由用CNT漿料噴霧及網版印刷所製備的樣品，則該液態溶液會容易地穿透到多孔CNT陰極中使得大部份之陰極材料會容易地移除。由於聚合物之高黏著力，可使用無機粉末調節聚合物之黏著性質以在剝除聚合物材料時避免損壞CNT陰極。不過，要將無機粉末均勻地分散到該聚合物中戲不容易者，因為該粉末傾向沉到聚合物之底部且不會均勻地懸浮於溶液內。粉末的不均勻分散因而會在其固化時，導致聚合物膜的不一致黏著性質。此會影響由該含粉末聚合物膜活化的CNT陰極之場發射一致性。但是，若CNT陰極之黏著力可改良之時，純聚合物溶液就可以用於一致性活化而不會移除太多的CNT陰極材料或損壞CNT陰極。
CNT糊狀物通常含有有機或無機黏合劑、溶劑、和其他添加物。常使用玻璃熔料粉作為無機黏合劑以在煅燒製程熔化該熔料材料並黏合至基板而使CNTs黏上基板。遺憾地，玻璃熔料基質(基本上為金屬氧化物粉末(PbO、SiO2 、B2 O3 ，等))，由於CNTs與熔料材料之不相容性及在煅燒後熔料材料對基板的不連續性覆蓋，都不能與CNTs強勁地黏合至基板上。熔料材料對基板的不連續性覆蓋也造成CNT非一致性黏著間題，因為在施用活化程序時，在大面積基板上之非一致性黏著會導致CNT材料之非一致性移除之故。為改良CNT陰極之黏著，需要使用一種對CNTs與基板兩者都具有相當強黏合強度之材料來調配CNT糊狀物。旋塗玻璃黏合劑(SOG)業經報導用來與其他有機媒劑一起調配CNT糊狀物以改良場發射特質(Jae－Hong Park,et al.Asian Display/IMID’04 Digest,468,2004)。但是，研究顯示SOG材料即便固化後仍具有排氣問題，使彼等不成為真空裝置中的良好候選者(J.D.Romero,M.Khan,H Fatemi,及J.Turlo,J.Mater.Res.,6(9),1996(1991))。CNT糊狀物之另一問題在於常採用高溫煅燒方法來煅燒掉糊狀物中之有機材料。該煅燒程序通常會因損壞CNTs導致CNTs之場發射特質的惡化及自糊狀物中的有機媒劑材料產生殘渣而影響CNTs之操作功能(R.Collazo,R.Schlesser,及Z.Sitar,Appl.Phys.Lett.78,2058(2001))。低溫可煅燒的有機黏合劑業經研究以減低CNT陰極在360℃之煅燒溫度(Sora Lee,Won Bin Im,Jong Hyuk Kang,及Duk Young Jeon,J.Vac.Sci.Technol.B23(2),745(2005))。但仍需要玻璃熔料材料以提高CNT陰極之黏著。來自具有低濃度之有機黏合劑之殘餘材料，遺憾地，在煅燒後依舊可偵測到。當場發射裝置經真空密封時，該有機材料之殘渣也會引起排氣問題。有機矽氧烷聚合物，其在美國專利公告第US2005/0242344號中用為低溫固化黏合劑材料，不過，需要在超過400℃下煅燒掉且也會產生殘餘材料。對於CNTs糊狀物調配物需要一種新穎的黏合劑材料，其可在低溫中固化且不惡化CNTs。該黏合材料也應具有高溫熱穩定性、低真空排氣、及良好的CNTs分散性。
一種矽梯式聚合物，聚苯基矽倍半氧烷(Polyphenylsilsesquioxane)(PPSQ)，係一種具有順式－間規性(cis－syndiotactic)雙鏈結構之無機聚合物，如圖1中所示者(J.F.Brown,Jr.,J.Polym.Sci.1C(1963)83)。其已為新興的下一代材料用於半導體絕緣膜、光學纖維結合、太空梭外面塗料、及防水塗料。此材料經設計為具有SiO2 之良好物理性質且為伴隨有機化學的官能基化學反應性之優良選擇。聚苯基矽倍半氧烷((C6 H5 SiO1.5 )x )，特別地，因為其對於，目前利用，在電子學、光子學、及其他材料技術中所用矽基無機物之潛在替代性，與相容性，而已經產生極大重要性。在具有低真空排氣性質之下，PPSQ材料業經被認為對場發射裝置所用基板具有良好黏著性之絕緣體(K.Nishimura,et al.,J.Vac.Sci.Techn.B 22(3),1377(2004))。來自PPSQ類的吸附氣體係顯著地低者，有助於真空密封裝置的長壽命。該PPSQ可經旋塗或網版印刷在基板上成為薄膜或厚膜而為對微電子具有良好黏著性之電介質材料。此類型材料亦具有低的熱收縮率。該熱退火的收縮率低於0.1%。再者，PPSQ材料可經由濕式及乾式蝕刻予以圖案化。不像玻璃熔料粉末者，PPSQ材料可溶解於溶劑內以製成溶液使得CNTs可分散於黏著性黏合劑基質中以在基板上獲得一致的黏著層。此材料可在200℃固化且具有高達500℃之熱穩定性，使其成為良好的黏合劑候選物用於CNT調配物中以取代玻璃熔料材料或甚至有機黏合劑材料。PPSQ類聚合物可終端結合其他化學官能基，諸如C2 H5 O－PPSQ－C2 H5 及CH3 －PPSQ－CH3 。
多面體低聚矽倍半氧烷(POSS)，另一類無機聚合物，亦可用來調配CNT糊狀物。POSS化學技術具有獨特的特徵：其化學組成物係介於氧化矽(SiO2 )及矽酮(R2 SiO)之間的混雜中間產物(RSiO1.5 )。
PPSQ CNT糊狀物調配物1：PPSQ材料可經由將40~50重量% PPSQ材料和40~50重量%甲苯用攪拌機混合15小時而製成。PPSQ的黏度範圍為自500－5000 CP。接著，可按下述調配PPSQ CNT糊狀物：可將20~30重量% PPSQ＋60~70重量%稀釋劑(松脂醇)＋3~10重量% SWNTs＋3~10重量%石墨(2~15微米)在研缽內用手摻合。然後，使用三輥磨機處理此混合物5次。可添加石墨粉以創造邊界使得CNTs不會被PPSQ材料湮沒且確使某些CNTs可由活化程序所釋放。
該PPSQ CNT糊狀物可用網版印刷在ITO玻璃上。活性CNT陰極面積可為3×3平方公分。將PPSQ CNT陰極用一煅燒程序(400℃氮氣中)煅燒。該CNT陰極具有一非常良好的黏著性，因為使用發泡體片時幾乎沒有材料可自該陰極之表面移除。黏著膠帶活化可用於該PPSQ CNT陰極，自表面移除非常少的材料且在活化之前與之後都保持同樣的厚度(~7微米)。當使用軟質發泡體和膠帶進行活化時，可用層合機透過滾筒以適當壓力施用發泡體或膠帶在CNT陰極之表面上。該PPSQ CNT陰極具有比從含有玻璃熔料及有機媒劑的糊狀物製備的其他CNT陰極遠較為好的對基板黏著性。當採用膠帶活化程序時，從含有玻璃熔料或其他黏合劑的其他奈米碳管陰極可移除超過50%之材料。圖2顯示從二種PPSQ CNT陰極及標準CNT陰極所得之I－V曲線。標準CNT糊狀物包含CNTs、有機媒劑、玻璃熔料、及溶劑。
由於以PPSQ為基的CNT陰極之更高黏著性，水基聚合物(X－膜複製品X2020，可得自Transfer Devices,Inc.)就可活化CNT陰極。該水基聚合物溶液包括56~78重量%水、17~34重量%乙醇、3~8重量%乙醇均聚物、及1~2重量%丁醇。
該活化程序係：1)將一滴液體聚合物(X－膜)溶液置於CNT陰極上。使該液體溶液均勻地淹沒整個陰極。
2)在空氣中或60℃之烤箱內乾燥X－膜。該X－膜之厚度可經由調節X－膜溶液之體積而控制在超過50微米。
3)剝離該X－膜以活化CNT陰極。
該液體溶液可容易地穿透到多孔CNT陰極內使得若CNT的黏著性不夠好時，諸如經由噴布製備的樣品，及某些印製樣品，大部份陰極材料會容易被移除。X－膜活化對於具有良好黏著性的印製PPSQ CNT陰極可良好地作用。該標準CNT陰極係在450℃煅燒且可用膠帶或發泡體活化，不過X－膜會移除幾乎所有的CNT陰極材料，而由於極少的CNTs留在基板上，導致非常不良的場發射。
與美國專利公告第US2005/0129858A1中所用的複雜聚合物材料所不同者，X－膜係一種水溶性聚合物且可在室溫空氣中硬化。PPSQ CNT糊狀物亦為獨特者，因為其比傳統CNT糊狀物具有遠較為好的黏著性。
使用X－膜活化之優點為：1)用於三極管應用所用的良好結構基板可由液體溶液自然地填充且在洞內的CNT陰極表面上產生一致的接觸。
2)使用層合機的活化通常會在大陰極上造出壓力變異，如此會導致一致性問題。X－膜活化不需要用到層合機。
3)因為在固化後形成整體聚合物片，所以在活化後之陰極上沒有觀察到明顯的殘渣。使用膠帶，將黏著劑和塑膠基板分開而可能有一些黏著劑殘渣保留在陰極上。
如圖2所顯示者，由X－膜活化的PPSQ CNT陰極具有改良的場發射特性。圖3顯示出來自以膠帶活化的PPSQ CNT陰極(30mA，4.2伏/微米)之場發射照度。圖4顯示出由X－膜活化的PPSQ CNT陰極(30mA，3.9伏/微米)之場發射照度。
PPSQCNT糊狀物調配物2：也可使用雙壁型CNTs(DWNTs)來調配CNT糊狀物。可將15~25重量% PPSQ(甲苯作為溶劑)，65~80重量%稀釋劑，2~10重量% DWNTs和2~10重量%石墨(2~15微米)在研缽內用手混合。然後，使用三輥磨機處理此混合物至少5次。
可將該PPSQ CNT糊狀物用網版印在ITO玻璃上(具有3×3平方公分之活性CNT陰極面積)。該PPSQ CNT陰極可用烘烤方法(200℃空氣中)固化1小時。該CNT陰極具有非常良好的黏著性。膠帶活化可用於該PPSQ CNT陰極，自表面移除非常少的材料且在活化之前和之後基本上保持其厚度。圖5顯示來自在200℃固化及450℃固化的PPSQ CNT陰極之I－V曲線。其指出較低溫固化法可防止CNTs惡化，因而導致較低的電場。
PPSQ CNT糊狀物調配物3：也可將PPSQ添加至其他CNT糊狀物以提高黏著性，可以使用雙壁型CNT(DWNT)糊狀物作為主糊狀物以調配具有5~15重量%PPSQ材料。該主DWNT糊狀物可用10~20重量%CNTs、30~65重量%有機媒劑、30~60重量%稀釋劑、及5~20重量%玻璃熔料粉予以調配。可將該混合物在研缽內用杵摻合及接著以三輥磨機進一步分散。在調配中，可以使用稀釋劑(松脂醇)調節該糊狀物物之黏度。該糊狀物的黏度可為自9000 CP至90,000厘泊(CP)。
PPSQ CNT糊狀物調配物4：將10~30重量% PPSQ＋40~70重量%稀釋劑＋3~10重量% SWNTs＋(6~20重量%)有機媒劑、＋3~20重量%石墨(2~15微米)在研缽內用手摻合。有機媒劑包括乙基纖維素(15－20%)、乙酸丁基卡必醇(60－70%)、及卡必醇(10－20%)。接著，可使用三輥磨機處理此混合物5次。該糊狀物的黏度範圍可自10000 CP至90000厘泊(CP)。可將用此糊狀物調配物製備的CNT陰極在390℃煅燒以燒掉有機媒劑材料。此調配物中之媒劑材料係用於使以PPSQ為基的糊狀物更適合用於印刷。
使用一網版，可將該PPSQ改質的CNT糊狀物網版印刷在具有50微米深洞之三極管結構上，如圖6所顯示者。圖6A闡示一種基板4，在其上沉積電極3和絕緣體2且用沉積於三極管結構的洞內之CNT陰極1予以圖案化。圖6B顯示出一自X－膜之液態材料形成之可剝離的聚合物膜5。液體聚合物(X－膜水溶液)係經填充到三極管結構的腔中且固化形成用於CNT陰極1之活化的可剝離厚膜(超過50微米)。
於用X－膜活化之下，可得具有深腔之非常一致的CNT陰極，如圖7所示者。圖7顯示出一種場發射照明之數位影像，顯示出經由對具有50微米深洞之三極管結構使用X－膜活化所得非常一致的場發射，如圖6所示。在此樣品中，像素大小為250×800平方微米。
經由使用PPSQ CNT糊狀物及X－膜之高解像力圖案化CNT陰極：網版印刷之解析度限值使其難於得到具有小於50微米的特徵之圖案。可以使用UV(紫外線)敏感性聚合物來圖案化CNTs。遺憾地，此聚合物材料在煅燒後可能具有殘渣，且在圖案化CNT陰極後亦需要活化程序。再者，通常需要舉離程序來移除UV曝光區。在此舉離製程常使用溶劑，此會影響CNT陰極。業經證實者，可經由使用標準微影法將可剝離的X－膜圖案化。於此揭示一種方法，其藉由使用可剝離的X－膜，可圖案化出具有相當高解析度的CNT陰極且可在移除該可剝離的X－膜時，予以活化，如圖8示出者。PPSQ CNT陰極可使用CF4 和O2 經由RIE(反應性離子蝕刻)予以蝕刻，因為PPSQ材料可用相當高蝕刻速率予以蝕刻。在圖8A中，電極經沉積在一基板上。在圖8B中，方法接著係PPSQ CNT陰極之印刷。圖8C顯示出一旋塗在陰極之頂上的X－膜。圖8D闡示在X－膜層之頂上塗覆一光阻劑。在圖8E中，該方法接著為以所欲方式進行的光阻劑之圖案化。在圖8F中，使用具有光阻劑之典型微影技術將該X－膜曝光及移除。在圖8G中，經由乾式蝕刻移除曝光過的PPSQ CNT陰極材料。在圖8H中，沉積一厚X－膜，及接著在圖8I中，剝離該厚X－膜以活化該圖案化的CNT陰極。
圖9闡示出使用陰極製成之場發射顯示器938的一部份，如上面造出者。在陰極內包含一傳導層906。陽極可包括一玻璃基板902、銦錫層903、與一燐光體層904。在陽極與陰極之間建立一電場。此類顯示器938可用於資料處理系統1013內諸如闡示於圖10之中者。
用於實施本發明之代表性硬體環境經繪示於圖10中，其闡示一根據本發明資料處理系統1013示範的硬體組態，其中具有中央處理單元(CPU)1010，諸如習用的微處理器，與透過系統匯流排1012互連的許多其他單元。資料處理系統1013包括隨機存取記憶體(RAM)1014、唯讀記憶體(ROM)1016和輸出/輸入(I/O)轉接器1018用於連接周邊裝置諸如磁碟單元1020及磁帶機1040至匯流排1012；使用者介面轉接器1022，用於連接鍵盤1024、滑鼠1026及/或其他使用者介面裝置諸如觸控式螢幕裝置(沒有顯示出)至匯流排1012；用於連接資料處理系統1013至資料處理網路之通信轉接器1034；及顯示器轉接器1036，用於連接匯流排1012至顯示器裝置1038。CPU 1010可能包含在本文中沒有顯示出之其他電路系統，其包括常在微處理器內的電路系統，例如，執行單元、匯流排介面單元、算數邏輯單元，等。
雖然本發明及其優點業經詳細說明，不過應瞭解者對其可做出各種改變、取代及變更而不脫離由後附申請專利範圍所界定的本發明旨意及範圍。
1．．．CNT陰極
2．．．絕緣體
3．．．電極
4．．．基板
5．．．可剝離的聚合物膜
902．．．玻璃基板
903．．．銦錫層
904．．．燐光體層
906．．．傳導層
938．．．場發射顯示器
1010．．．中央處理單元(CPU)
1012．．．系統匯流排
1013．．．資料處理系統
1014．．．隨機存取記憶體
1016．．．唯讀記憶體
1018．．．輸出/輸入(I/O)轉接器
1020．．．磁碟單元
1022．．．使用者介面轉接器
1024．．．鍵盤
1026．．．滑鼠
1034．．．通信轉接器
1036．．．顯示器轉接器
1038．．．顯示器裝置
1040．．．磁帶機
為了對本發明，其優點，更完全的瞭解，於此要參照下面配合所附圖式的說明，其中：圖1闡示一種PPSQ階梯狀無機聚合物(HO－PPSQ－H)之化學結構；圖2闡示在標準CNT陰極與PPSQ CNT陰極之間場發射I－V比較；圖3闡示經由帶子活化的PPSQ CNT陰極；圖4闡示由X－膜活化的PPSQ CNT陰極；圖5闡示在200℃與450℃固化的PPSQ CNT陰極之間的場發射I－V比較；圖6A及6B闡示經填充於三極管結構的腔內且經固化以形成用於活化的可剝離厚膜之液體聚合物(X－膜水溶液)；圖7闡示出對具有50微米深洞之三極管結構使用X－膜活化所得一致性場發射影像；圖8A－8I闡示一種使用可剝離膜以圖案化及活化具有高解析度的CNT陰極之方法；圖9闡示一種按照本發明具體實例構組成的場發射裝置；及圖10闡示按照本發明具體實例構組的一種資料處理系統。
1．．．CNT陰極
2．．．絕緣體
3．．．電極
4．．．基板
5．．．可剝離的聚合物膜

Claims (7)

  1. 一種複合物，其包含與奈米碳管混合之無機聚合物，其中該無機聚合物係一矽梯式聚合物。
  2. 如申請專利範圍第1項之複合物，其中該無機聚合物黏合劑係聚苯基矽倍半氧烷(Polyphenylsilsesquioxane)(PPSQ)。
  3. 如申請專利範圍第1項之複合物，其中該無機聚合物係多面體低聚矽倍半氧烷(POSS)。
  4. 一種複合物，其包含奈米碳管、石墨粉及無機聚合物之混合物，其中該無機聚合物為一矽梯式聚合物。
  5. 一種場發射陰極，其包括：一基板；一在該基板上之場射極(field emitter)，其中該場射極包括一包含奈米碳管及無機聚合物之糊狀物，其中該無機聚合物為一矽梯式聚合物；及電路系統，用於產生電場以自該場射極引起電子場發射。
  6. 如申請專利範圍第5項之場發射陰極，其中該無機聚合物包含PPSQ。
  7. 如申請專利範圍第5項之場發射陰極，其中該無機聚合物包含POSS。
TW095149033A 2006-01-03 2006-12-26 用於奈米碳管電子發射陰極之固化黏合劑材料 TWI449664B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75597806P 2006-01-03 2006-01-03
US11/612,313 US8264137B2 (en) 2006-01-03 2006-12-18 Curing binder material for carbon nanotube electron emission cathodes

Publications (2)

Publication Number Publication Date
TW200738558A TW200738558A (en) 2007-10-16
TWI449664B true TWI449664B (zh) 2014-08-21

Family

ID=38541602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149033A TWI449664B (zh) 2006-01-03 2006-12-26 用於奈米碳管電子發射陰極之固化黏合劑材料

Country Status (6)

Country Link
US (1) US8264137B2 (zh)
JP (1) JP2009522203A (zh)
KR (1) KR101368255B1 (zh)
CN (1) CN101365735B (zh)
TW (1) TWI449664B (zh)
WO (1) WO2007111748A2 (zh)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101166015B1 (ko) * 2006-04-26 2012-07-19 삼성에스디아이 주식회사 전자 방출원, 전자 방출원 형성용 조성물, 상기 전자방출원의 제조 방법 및 상기 전자 방출원을 구비한 전자방출 소자
CN101620454A (zh) * 2008-07-04 2010-01-06 清华大学 便携式电脑
CN101470559B (zh) * 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101458599B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101464763B (zh) * 2007-12-21 2010-09-29 清华大学 触摸屏的制备方法
CN101458604B (zh) * 2007-12-12 2012-03-28 清华大学 触摸屏及显示装置
CN101458593B (zh) * 2007-12-12 2012-03-14 清华大学 触摸屏及显示装置
CN101458609B (zh) * 2007-12-14 2011-11-09 清华大学 触摸屏及显示装置
CN101470566B (zh) * 2007-12-27 2011-06-08 清华大学 触摸式控制装置
CN101458603B (zh) * 2007-12-12 2011-06-08 北京富纳特创新科技有限公司 触摸屏及显示装置
CN101458605B (zh) * 2007-12-12 2011-03-30 鸿富锦精密工业（深圳）有限公司 触摸屏及显示装置
CN101419518B (zh) * 2007-10-23 2012-06-20 清华大学 触摸屏
CN101470558B (zh) * 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101458606B (zh) * 2007-12-12 2012-06-20 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101458594B (zh) * 2007-12-12 2012-07-18 清华大学 触摸屏及显示装置
CN101458595B (zh) * 2007-12-12 2011-06-08 清华大学 触摸屏及显示装置
CN101458598B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏及显示装置
CN101470560B (zh) * 2007-12-27 2012-01-25 清华大学 触摸屏及显示装置
CN101656769B (zh) * 2008-08-22 2012-10-10 清华大学 移动电话
CN101655720B (zh) * 2008-08-22 2012-07-18 清华大学 个人数字助理
CN101458596B (zh) * 2007-12-12 2011-06-08 北京富纳特创新科技有限公司 触摸屏及显示装置
CN101419519B (zh) * 2007-10-23 2012-06-20 清华大学 触摸屏
CN101458602B (zh) * 2007-12-12 2011-12-21 清华大学 触摸屏及显示装置
CN101458608B (zh) * 2007-12-14 2011-09-28 清华大学 触摸屏的制备方法
CN101676832B (zh) * 2008-09-19 2012-03-28 清华大学 台式电脑
CN101458600B (zh) * 2007-12-14 2011-11-30 清华大学 触摸屏及显示装置
CN101458597B (zh) * 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101458975B (zh) * 2007-12-12 2012-05-16 清华大学 电子元件
CN101458607B (zh) * 2007-12-14 2010-12-29 清华大学 触摸屏及显示装置
CN101458601B (zh) * 2007-12-14 2012-03-14 清华大学 触摸屏及显示装置
CN101464757A (zh) * 2007-12-21 2009-06-24 清华大学 触摸屏及显示装置
CN101464765B (zh) * 2007-12-21 2011-01-05 鸿富锦精密工业（深圳）有限公司 触摸屏及显示装置
CN101464766B (zh) * 2007-12-21 2011-11-30 清华大学 触摸屏及显示装置
CN101464764B (zh) * 2007-12-21 2012-07-18 清华大学 触摸屏及显示装置
CN101470565B (zh) * 2007-12-27 2011-08-24 清华大学 触摸屏及显示装置
US8574393B2 (en) * 2007-12-21 2013-11-05 Tsinghua University Method for making touch panel
US8237677B2 (en) * 2008-07-04 2012-08-07 Tsinghua University Liquid crystal display screen
US8390580B2 (en) 2008-07-09 2013-03-05 Tsinghua University Touch panel, liquid crystal display screen using the same, and methods for making the touch panel and the liquid crystal display screen
CN101924816B (zh) * 2009-06-12 2013-03-20 清华大学 柔性手机
CN102013371B (zh) * 2009-09-04 2012-11-21 清华大学 一种冷阴极的表面处理方法
TWI407485B (zh) * 2009-09-22 2013-09-01 Hon Hai Prec Ind Co Ltd 一種冷陰極的表面處理方法
CN102443247B (zh) * 2011-09-16 2013-01-23 桂林理工大学 一种氧化石墨烯接枝poss改性环氧树脂的制备方法
JP6700787B2 (ja) * 2012-12-07 2020-05-27 スリーエム イノベイティブ プロパティズ カンパニー 基板上に透明導電体を製作する方法
JP5881019B2 (ja) * 2013-03-07 2016-03-09 国立大学法人 鹿児島大学 カーボンナノチューブ分散剤、その製造方法、カーボンナノチューブ分散液、及びその製造方法
JP6487740B2 (ja) * 2014-04-07 2019-03-20 株式会社日本触媒 ポリシロキサン化合物、その製造方法、及び、ポリシロキサン化合物と導電性炭素材料とを含む導電性炭素材料含有組成物
CN105448624B (zh) * 2014-07-10 2017-09-01 清华大学 场发射阴极的制备方法
CN111128637B (zh) * 2018-11-01 2021-02-26 清华大学 场发射体的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040198892A1 (en) * 2003-04-01 2004-10-07 Cabot Microelectronics Corporation Electron source and method for making same
US20050058939A1 (en) * 2000-11-21 2005-03-17 Tyco Electronics Corporation Pigments and compositions for use in laser marking
US20050275330A1 (en) * 2002-03-08 2005-12-15 Chien-Min Sung Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof

Family Cites Families (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5458784A (en) 1990-10-23 1995-10-17 Catalytic Materials Limited Removal of contaminants from aqueous and gaseous streams using graphic filaments
US5547748A (en) 1994-01-14 1996-08-20 Sri International Carbon nanoencapsulates
US5691101A (en) 1994-03-15 1997-11-25 Kabushiki Kaisha Toshiba Photosensitive composition
US5866434A (en) 1994-12-08 1999-02-02 Meso Scale Technology Graphitic nanotubes in luminescence assays
US6203814B1 (en) 1994-12-08 2001-03-20 Hyperion Catalysis International, Inc. Method of making functionalized nanotubes
US6673533B1 (en) 1995-03-10 2004-01-06 Meso Scale Technologies, Llc. Multi-array multi-specific electrochemiluminescence testing
HUP9801679A3 (en) 1995-03-10 2001-01-29 Meso Scale Technologies Llc Co Process and agent for multi-array, multi-specific electrochemiluminescence testing
US5512368A (en) 1995-03-16 1996-04-30 E. I. Du Pont De Nemours And Company Fibers reinforced with inorganic whiskers
JPH09111135A (ja) 1995-10-23 1997-04-28 Mitsubishi Materials Corp 導電性ポリマー組成物
US5800706A (en) 1996-03-06 1998-09-01 Hyperion Catalysis International, Inc. Nanofiber packed beds having enhanced fluid flow characteristics
US5965202A (en) 1996-05-02 1999-10-12 Lucent Technologies, Inc. Hybrid inorganic-organic composite for use as an interlayer dielectric
US6017390A (en) 1996-07-24 2000-01-25 The Regents Of The University Of California Growth of oriented crystals at polymerized membranes
EP0927331B1 (en) 1996-08-08 2004-03-31 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US6713173B2 (en) 1996-11-16 2004-03-30 Nanomagnetics Limited Magnetizable device
US6683783B1 (en) 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
US6770583B2 (en) 1997-03-14 2004-08-03 The United States Of America As Represented By The Secretary Of The Navy Transistion metal containing ceramic with metal nanoparticles
US6205016B1 (en) 1997-06-04 2001-03-20 Hyperion Catalysis International, Inc. Fibril composite electrode for electrochemical capacitors
DE19745549C2 (de) 1997-10-10 1999-11-04 Mannesmann Ag Gasspeicher
US6126888A (en) 1998-01-09 2000-10-03 Quantum Group Inc. Method for making strong mantles and other ceramic structures
US6287765B1 (en) 1998-05-20 2001-09-11 Molecular Machines, Inc. Methods for detecting and identifying single molecules
US6705152B2 (en) 2000-10-24 2004-03-16 Nanoproducts Corporation Nanostructured ceramic platform for micromachined devices and device arrays
DE19859654A1 (de) 1998-12-15 2000-06-29 Mannesmann Ag Vorrichtung zum Speichern von Druckgas
DE60003281T2 (de) 1999-01-15 2004-05-06 3M Innovative Properties Co., Saint Paul Thermisches Übertragungsverfahren.
US6555945B1 (en) 1999-02-25 2003-04-29 Alliedsignal Inc. Actuators using double-layer charging of high surface area materials
US6333016B1 (en) 1999-06-02 2001-12-25 The Board Of Regents Of The University Of Oklahoma Method of producing carbon nanotubes
US6444864B1 (en) 1999-06-07 2002-09-03 Drexel University Thermal plasma process for recovering monomers and high value carbons from polymeric materials
CA2372707C (en) 1999-07-02 2014-12-09 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and method of their manufacture
DE10023456A1 (de) 1999-07-29 2001-02-01 Creavis Tech & Innovation Gmbh Meso- und Nanoröhren
US6299812B1 (en) 1999-08-16 2001-10-09 The Board Of Regents Of The University Of Oklahoma Method for forming a fibers/composite material having an anisotropic structure
US6723396B1 (en) 1999-08-17 2004-04-20 Western Washington University Liquid crystal imprinting
US6423768B1 (en) 1999-09-07 2002-07-23 General Electric Company Polymer-organoclay composite compositions, method for making and articles therefrom
US6491891B1 (en) 1999-09-10 2002-12-10 Ut-Battelle, Inc. Gelcasting polymeric precursors for producing net-shaped graphites
US6517995B1 (en) 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
JP3834746B2 (ja) 1999-09-22 2006-10-18 潤二 伊藤 多孔質ゴム系電極用バインダー、これを用いた多孔質ゴム系電極及び多孔質ゴム系電極基材
US6318649B1 (en) 1999-10-06 2001-11-20 Cornerstone Technologies, Llc Method of creating ultra-fine particles of materials using a high-pressure mill
WO2001036941A1 (en) 1999-11-18 2001-05-25 Advanced Technology Materials, Inc. Optical hydrogen detector
US6352782B2 (en) 1999-12-01 2002-03-05 General Electric Company Poly(phenylene ether)-polyvinyl thermosetting resin
US6401526B1 (en) 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
US6521703B2 (en) 2000-01-18 2003-02-18 General Electric Company Curable resin composition, method for the preparation thereof, and articles derived thereform
AU3229901A (en) 2000-02-16 2001-08-27 Asahi Kasei Kabushiki Kaisha Polyamide resin composition
US6979248B2 (en) 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991528B2 (en) 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6800155B2 (en) 2000-02-24 2004-10-05 The United States Of America As Represented By The Secretary Of The Army Conductive (electrical, ionic and photoelectric) membrane articlers, and method for producing same
US6414086B1 (en) 2000-02-29 2002-07-02 Howmedica Osteonics Corp. Compositions, processes and methods of improving the wear resistance of prosthetic medical devices
US6610351B2 (en) 2000-04-12 2003-08-26 Quantag Systems, Inc. Raman-active taggants and their recognition
US6894100B2 (en) 2000-04-26 2005-05-17 Asahi Kasei Kabushiki Kaisha Electrically conductive resin composition and production process thereof
US6913713B2 (en) 2002-01-25 2005-07-05 Konarka Technologies, Inc. Photovoltaic fibers
US6706963B2 (en) 2002-01-25 2004-03-16 Konarka Technologies, Inc. Photovoltaic cell interconnection
US6919119B2 (en) 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
US6384727B1 (en) 2000-08-02 2002-05-07 Motorola, Inc. Capacitively powered radio frequency identification device
WO2002015240A1 (en) 2000-08-15 2002-02-21 The Trustees Of The Universtiy Of Pennsylvania Directed assembly of nanometer-scale molecular devices
US7094285B2 (en) 2000-09-20 2006-08-22 Goodrich Corporation Inorganic matrix compositions, composites incorporating the matrix, and process of making the same
EP1233259A4 (en) 2000-09-21 2005-06-22 Matsushita Electric Ind Co Ltd SENSOR MICROSCOPE-PROBE PROBE, PROCESS FOR PRODUCING SAME, SCANNING MICROSCOPE PROBE HAVING SAME, AND POLYMER PROCESSING METHOD USING SAME MICROSCOPE
US6861481B2 (en) 2000-09-29 2005-03-01 Solvay Engineered Polymers, Inc. Ionomeric nanocomposites and articles therefrom
US7067577B2 (en) 2000-10-16 2006-06-27 Asahi Kasei Kabushiki Kaisha Apatite-reinforced resin composition
US6893103B2 (en) 2000-10-17 2005-05-17 Seiko Epson Corporation Ink jet recording apparatus and manufacturing method for functional liquid applied substrate
US6682677B2 (en) 2000-11-03 2004-01-27 Honeywell International Inc. Spinning, processing, and applications of carbon nanotube filaments, ribbons, and yarns
US6599446B1 (en) 2000-11-03 2003-07-29 General Electric Company Electrically conductive polymer composite compositions, method for making, and method for electrical conductivity enhancement
JP4887558B2 (ja) 2000-11-07 2012-02-29 ソニー株式会社 燃料電池の使用方法
KR100984603B1 (ko) 2000-12-11 2010-09-30 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US6783746B1 (en) 2000-12-12 2004-08-31 Ashland, Inc. Preparation of stable nanotube dispersions in liquids
EP1373386B1 (en) 2001-01-10 2006-08-16 Alliant Techsystems Inc. Fiber-reinforced rocket motor insulation
WO2002066482A1 (en) 2001-01-17 2002-08-29 Purdue Research Foundation Method and associated compounds for forming nanotubes
US6538725B2 (en) 2001-01-22 2003-03-25 General Electric Company Method for determination of structural defects of coatings
US6782154B2 (en) 2001-02-12 2004-08-24 Rensselaer Polytechnic Institute Ultrafast all-optical switch using carbon nanotube polymer composites
JP3809342B2 (ja) 2001-02-13 2006-08-16 喜萬 中山 受発光プローブ及び受発光プローブ装置
EP1360700A1 (en) 2001-02-16 2003-11-12 E.I. Dupont de Nemours and Company High conductivity polyaniline compositions and uses therefor
JP3991602B2 (ja) 2001-03-02 2007-10-17 富士ゼロックス株式会社 カーボンナノチューブ構造体の製造方法、配線部材の製造方法および配線部材
WO2002076430A1 (en) 2001-03-26 2002-10-03 Eikos, Inc. Carbon nanotubes in structures and repair compositions
EP1392500A1 (en) 2001-03-26 2004-03-03 Eikos, Inc. Coatings containing carbon nanotubes
DE10116232A1 (de) 2001-04-02 2002-10-10 Creavis Tech & Innovation Gmbh Verfahren zur Herstellung von Formkörpern mit innenbeschichteten Hohlräumen
US6977171B1 (en) 2001-04-03 2005-12-20 University Of Florida Detoxification and decontamination using nanotechnology therapy
US7056455B2 (en) 2001-04-06 2006-06-06 Carnegie Mellon University Process for the preparation of nanostructured materials
US6689835B2 (en) 2001-04-27 2004-02-10 General Electric Company Conductive plastic compositions and method of manufacture thereof
JP4207398B2 (ja) 2001-05-21 2009-01-14 富士ゼロックス株式会社 カーボンナノチューブ構造体の配線の製造方法、並びに、カーボンナノチューブ構造体の配線およびそれを用いたカーボンナノチューブデバイス
US7052854B2 (en) 2001-05-23 2006-05-30 University Of Florida Research Foundation, Inc. Application of nanotechnology and sensor technologies for ex-vivo diagnostics
WO2002094936A1 (fr) 2001-05-24 2002-11-28 Asahi Kasei Kabushiki Kaisha Composition de resine thermoplastique et articles moules
WO2002100931A1 (en) 2001-06-08 2002-12-19 Eikos, Inc. Nanocomposite dielectrics
AU2002363352A1 (en) 2001-06-15 2003-05-19 The Pennsylvania State Research Foundation Method of purifying nanotubes and nanofibers using electromagnetic radiation
US7077939B1 (en) 2001-06-18 2006-07-18 The Texas A&M University System Method and apparatus for nanoparticle transport and detection
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
AU2002332422C1 (en) 2001-07-27 2008-03-13 Eikos, Inc. Conformal coatings comprising carbon nanotubes
JP2003045760A (ja) 2001-07-30 2003-02-14 Asahi Glass Co Ltd 積層型電気二重層キャパシタモジュール
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
JP2003050280A (ja) 2001-08-03 2003-02-21 Konica Corp 放射線画像検出器
EP2199437B1 (en) 2001-08-09 2015-07-29 Asahi Kasei Kabushiki Kaisha Use of an organic semiconductor solution to form oriented polyacene crystals on a substrate
US7001556B1 (en) 2001-08-16 2006-02-21 The Board Of Regents University Of Oklahoma Nanotube/matrix composites and methods of production and use
US6566665B2 (en) 2001-08-17 2003-05-20 International Business Machines Corporation Method and apparatus for linking and/or patterning self-assembled objects
DE60229955D1 (de) 2001-08-29 2009-01-02 Georgia Tech Res Inst Zusammensetzungen, welche stäbchenförmige polymere und nanoröhrenförmige strukturen umfassen, sowie verfahren zur herstellung derselben
WO2003019586A1 (en) 2001-08-30 2003-03-06 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
EP1291932A3 (en) 2001-09-05 2006-10-18 Konica Corporation Organic thin-film semiconductor element and manufacturing method for the same
US6867295B2 (en) 2001-09-07 2005-03-15 Dionex Corporation Ion exchange cryptands covalently bound to substrates
CA2460114C (en) 2001-09-10 2012-11-06 Meso Scale Technologies, Llc Assay buffer, compositions containing the same, and methods of using the same
US6991876B2 (en) 2001-10-05 2006-01-31 Sri International Metal/active oxygen batteries
EP1302312B1 (en) 2001-10-15 2005-12-28 Fuji Photo Film Co., Ltd. Lithographic printing plate precursor
US7074519B2 (en) 2001-10-26 2006-07-11 The Regents Of The University Of California Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
US20030134212A1 (en) 2001-12-26 2003-07-17 Eastman Kodak Company Element with antistat layer
US6811724B2 (en) 2001-12-26 2004-11-02 Eastman Kodak Company Composition for antistat layer
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
AUPR977301A0 (en) 2001-12-28 2002-01-31 Energy Storage Systems Pty Ltd An electrode for an energy storage device
US6887450B2 (en) 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
US6919395B2 (en) 2002-01-04 2005-07-19 Acushnet Company Golf ball compositions comprising nanoparticulates
JP3453377B2 (ja) 2002-01-08 2003-10-06 科学技術振興事業団 カーボンナノチューブ・カーボンナノホーン複合体とその製造方法
US7037562B2 (en) 2002-01-14 2006-05-02 Vascon Llc Angioplasty super balloon fabrication with composite materials
US7091412B2 (en) 2002-03-04 2006-08-15 Nanoset, Llc Magnetically shielded assembly
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
US6953001B2 (en) 2002-02-04 2005-10-11 Kazak Composites, Incorporated Hatch or door system for securing and sealing openings in marine vessels
US6828015B2 (en) 2002-02-08 2004-12-07 Mitsubishi Gas Chemical Company, Inc. Composite containing thin-film particles having carbon skeleton, method of reducing the thin-film particles, and process for the production of the composite
US6740900B2 (en) 2002-02-27 2004-05-25 Konica Corporation Organic thin-film transistor and manufacturing method for the same
US7127294B1 (en) 2002-12-18 2006-10-24 Nanoset Llc Magnetically shielded assembly
EP1483202B1 (en) 2002-03-04 2012-12-12 William Marsh Rice University Method for separating single-wall carbon nanotubes and compositions thereof
JP4531400B2 (ja) 2002-04-02 2010-08-25 ダウ グローバル テクノロジーズ インコーポレイティド エアギャップ含有半導体デバイスの製造方法及び得られる半導体デバイス
WO2003087194A1 (en) 2002-04-05 2003-10-23 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Polyimides from 2,3,3',4'-biphenyltetracarboxylic dianhydride and aromatic diamines
EP1503956A1 (en) 2002-04-08 2005-02-09 William Marsh Rice University Method for cutting single-wall carbon nanotubes through fluorination
US7122710B2 (en) 2002-04-08 2006-10-17 Wiiliam Marsh Rice University Fluorination of polymeric C60
US6879143B2 (en) 2002-04-16 2005-04-12 Motorola, Inc. Method of selectively aligning and positioning nanometer-scale components using AC fields
JP4736324B2 (ja) 2002-04-22 2011-07-27 コニカミノルタホールディングス株式会社 半導体素子及びその製造方法
US6908261B2 (en) 2002-05-09 2005-06-21 Forward Ventures, Lp Conductor polymer backfill composition and method of use as a reinforcement material for utility poles
EP1361619A3 (en) 2002-05-09 2007-08-15 Konica Corporation Organic thin-film transistor, organic thin-film transistor sheet and manufacturing method thereof
CA2487294A1 (en) 2002-05-21 2003-12-04 Eikos, Inc. Method for patterning carbon nanotube coating and carbon nanotube wiring
US7122106B2 (en) 2002-05-23 2006-10-17 Battelle Memorial Institute Electrosynthesis of nanofibers and nano-composite films
US6872330B2 (en) 2002-05-30 2005-03-29 The Regents Of The University Of California Chemical manufacture of nanostructured materials
US6946597B2 (en) 2002-06-22 2005-09-20 Nanosular, Inc. Photovoltaic devices fabricated by growth from porous template
JP3606855B2 (ja) 2002-06-28 2005-01-05 ドン ウン インターナショナル カンパニー リミテッド 炭素ナノ粒子の製造方法
US6852410B2 (en) 2002-07-01 2005-02-08 Georgia Tech Research Corporation Macroscopic fiber comprising single-wall carbon nanotubes and acrylonitrile-based polymer and process for making the same
US7061749B2 (en) 2002-07-01 2006-06-13 Georgia Tech Research Corporation Supercapacitor having electrode material comprising single-wall carbon nanotubes and process for making the same
US7098056B2 (en) 2002-08-09 2006-08-29 Nanoink, Inc. Apparatus, materials, and methods for fabrication and catalysis
US7077891B2 (en) 2002-08-13 2006-07-18 Air Products And Chemicals, Inc. Adsorbent sheet material for parallel passage contactors
JP4547852B2 (ja) 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
AU2003279708A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US6881492B2 (en) 2002-09-27 2005-04-19 Eastman Kodak Company Primer composition for polyesters
US6749982B2 (en) 2002-09-27 2004-06-15 Eastman Kodak Company Imaging member with polyester base
US7067867B2 (en) 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
JP4120527B2 (ja) 2002-10-04 2008-07-16 旭硝子株式会社 テトラフルオロエチレン／エチレン系共重合体組成物
JP4458231B2 (ja) 2002-10-08 2010-04-28 三菱瓦斯化学株式会社 ポリアミドおよび樹脂組成物
AU2003287618A1 (en) 2002-11-12 2004-06-03 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US7125533B2 (en) 2002-11-15 2006-10-24 William Marsh Rice University Method for functionalizing carbon nanotubes utilizing peroxides
JP4327732B2 (ja) 2002-12-02 2009-09-09 三洋電機株式会社 固体高分子型燃料電池、およびその製造方法
US7074887B2 (en) 2002-12-17 2006-07-11 The Regents Of The University Of California Chemical synthesis of chiral conducting polymers
US6841213B2 (en) 2002-12-27 2005-01-11 Scimed Life Systems, Inc Fiber pattern printing
US7244499B2 (en) * 2003-01-10 2007-07-17 Sanyo Electric Co., Ltd. Bonded structure including a carbon nanotube
US6833201B2 (en) 2003-01-31 2004-12-21 Clemson University Nanostructured-doped compound for use in an EL element
US6822032B2 (en) 2003-02-06 2004-11-23 General Electric Company Impact modified compositions of polyimide and polyamide resins
JP2004288609A (ja) * 2003-03-06 2004-10-14 Mitsubishi Electric Corp 電子放出源、その製造方法、及び画像表示装置
US7075105B2 (en) 2003-03-19 2006-07-11 Masataka Kano Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device
US6858528B2 (en) 2003-03-20 2005-02-22 Intel Corporation Composite sacrificial material
JP4619624B2 (ja) 2003-03-31 2011-01-26 旭硝子株式会社 積層ホース
US6825060B1 (en) 2003-04-02 2004-11-30 Advanced Micro Devices, Inc. Photosensitive polymeric memory elements
US7082683B2 (en) 2003-04-24 2006-08-01 Korea Institute Of Machinery & Materials Method for attaching rod-shaped nano structure to probe holder
JP3999746B2 (ja) 2003-05-19 2007-10-31 ローム アンド ハース カンパニー ポリマーナノ粒子の高固形分調製方法
US6860956B2 (en) 2003-05-23 2005-03-01 Agency For Science, Technology & Research Methods of creating patterns on substrates and articles of manufacture resulting therefrom
PL2422950T3 (pl) 2003-06-24 2015-03-31 Aspen Aerogels Inc Sposoby wytwarzania arkuszy żelowych
US7125101B2 (en) 2003-07-30 2006-10-24 Hewlett-Packard Development Company, L.P. Photonically activated fluid ejector apparatus and methods
US7026432B2 (en) 2003-08-12 2006-04-11 General Electric Company Electrically conductive compositions and method of manufacture thereof
US7083885B2 (en) 2003-09-23 2006-08-01 Eastman Kodak Company Transparent invisible conductive grid
US6995266B2 (en) 2003-10-03 2006-02-07 General Electric Company Thermally stable anthrapyridone compositions
US7119028B1 (en) 2003-10-29 2006-10-10 The United States Of America As Represented By The Secretary Of The Navy Surface imprinted films with carbon nanotubes
US7122165B2 (en) 2003-11-03 2006-10-17 The Research Foundation Of State University Of New York Sidewall-functionalized carbon nanotubes, and methods for making the same
US7013998B2 (en) 2003-11-20 2006-03-21 Halliburton Energy Services, Inc. Drill bit having an improved seal and lubrication method using same
US7118652B2 (en) 2003-12-04 2006-10-10 General Motors Corporation Airflow control devices based on active materials
US7059664B2 (en) 2003-12-04 2006-06-13 General Motors Corporation Airflow control devices based on active materials
KR20050060287A (ko) 2003-12-16 2005-06-22 삼성에스디아이 주식회사 카본나노튜브 에미터의 형성방법
US7056849B2 (en) 2004-01-16 2006-06-06 General Electric Company Nanoscale ordered composites of covalent ceramics for high-temperature structural applications via block-copolymer-assisted assembly and method of making
US7052618B2 (en) 2004-01-28 2006-05-30 Agilent Technologies, Inc. Nanostructures and methods of making the same
US6927249B1 (en) 2004-02-11 2005-08-09 Lg Chem, Ltd. Heat absorb-release plastic resin composition and molded product thereof
US7086939B2 (en) 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
KR20050096536A (ko) * 2004-03-31 2005-10-06 삼성에스디아이 주식회사 그리드 전극을 갖는 전자 방출 표시장치
US7019391B2 (en) 2004-04-06 2006-03-28 Bao Tran NANO IC packaging
KR20050104839A (ko) 2004-04-29 2005-11-03 삼성에스디아이 주식회사 전자 방출원 제조 방법, 전자 방출원 및 상기 전자방출원을 구비하는 전자 방출 소자
US7029056B2 (en) 2004-06-09 2006-04-18 General Motors Corporation Closure lockdown assemblies and methods utilizing active materials
US6893895B1 (en) 2004-07-07 2005-05-17 Advanced Micro Devices, Inc. CuS formation by anodic sulfide passivation of copper surface
US7071259B2 (en) 2004-07-27 2006-07-04 Equistar Chemicals, Lp Functionalized propylene polymer compositions and composites containing same
US7063377B2 (en) 2004-08-06 2006-06-20 General Motors Corporation Hood lift mechanisms utilizing active materials and methods of use
US7129133B1 (en) 2004-09-13 2006-10-31 Spansion Llc Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
US6998452B1 (en) 2005-01-14 2006-02-14 The Goodyear Tire & Rubber Company Controlled free radical agent for nanocomposite synthesis
US7413613B2 (en) * 2005-03-28 2008-08-19 Teco Nanotech Co., Ltd Method for activating electron source surface of field emission display

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050058939A1 (en) * 2000-11-21 2005-03-17 Tyco Electronics Corporation Pigments and compositions for use in laser marking
US20050275330A1 (en) * 2002-03-08 2005-12-15 Chien-Min Sung Diamond-like carbon thermoelectric conversion devices and methods for the use and manufacture thereof
US20040198892A1 (en) * 2003-04-01 2004-10-07 Cabot Microelectronics Corporation Electron source and method for making same

Also Published As

Publication number Publication date
JP2009522203A (ja) 2009-06-11
US8264137B2 (en) 2012-09-11
KR20080086916A (ko) 2008-09-26
WO2007111748A3 (en) 2008-01-03
WO2007111748A2 (en) 2007-10-04
TW200738558A (en) 2007-10-16
KR101368255B1 (ko) 2014-03-03
CN101365735A (zh) 2009-02-11
US20070262687A1 (en) 2007-11-15
CN101365735B (zh) 2013-01-23

Similar Documents

Publication Publication Date Title
TWI449664B (zh) 用於奈米碳管電子發射陰極之固化黏合劑材料
KR100777113B1 (ko) 미세패터닝이 가능한 고 신뢰성의 ｃｎｔ 에미터 제조 방법
KR20050060287A (ko) 카본나노튜브 에미터의 형성방법
CN100446155C (zh) 可印制的纳米材料冷阴极浆料及其场发射冷阴极的制备方法和应用
US20100079051A1 (en) Composition for forming electron emission source, electron emission source including the composition, method of preparing the electron emission source, and field emission device including the electron emission source
KR20070095497A (ko) 전극 형성용 전도성 분체, 이의 제조방법, 이를 이용한플라즈마 디스플레이 패널의 전극 형성방법, 및 이를포함하는 플라즈마 디스플레이 패널
CN101432838A (zh) 无激活下来自碳纳米管的增强的电子场致发射
KR20070039073A (ko) 패터닝 ｃｎｔ 이미터
US20050064167A1 (en) Carbon nanotubes
KR20080106939A (ko) 스텐실을 이용한 탄소 나노튜브 증착
KR100757100B1 (ko) 고분산성 탄소나노튜브 페이스트의 제조 방법
US20110119896A1 (en) Method of making air-fired cathode assemblies in field emission devices
CN100547713C (zh) 制造场发射器件的方法
KR101166014B1 (ko) 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자 방출원, 및 상기 전자 방출원을 포함하는 전자 방출 소자
US20070284989A1 (en) Composition for preparing electron emission source, electron emitter prepared using the composition, electron emission device including the electron emitter, and method of preparing the electron emitter
TWI296814B (zh)
KR101100820B1 (ko) 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자방출원, 및 상기 전자 방출원을 포함하는 전자 방출 소자
KR100965545B1 (ko) 평판 표시 소자의 전자 방출원 형성용 조성물 및 이로부터형성된 전자 방출원
KR101100814B1 (ko) 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자방출원, 및 상기 전자 방출원을 포함하는 전자 방출 소자
CN101719445B (zh) 形成等离子显示屏黑色障壁层的方法及其组合物
CN100358074C (zh) 高分子薄膜场发射阴极材料及其制备方法与装置
KR20060029733A (ko) 엣지-컬 버퍼층을 적용한 에미터 구조 및 그 제작 방법.
JP2009094055A (ja) 電界放出素子用絶縁層の製造方法および電界放出素子基板の製造方法
Cho et al. P‐100: Field‐Emission Properties of Photosensitive Carbon Nanotube Using Ethanol
KR20060054545A (ko) 전자 방출원 형성용 조성물, 이를 이용하여 제조된 전자방출원, 및 상기 전자 방출원을 포함하는 전자 방출 소자

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees