TWI434329B - Epitaxial structure with etch stop layer and its manufacturing method - Google Patents
Epitaxial structure with etch stop layer and its manufacturing method Download PDFInfo
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- TWI434329B TWI434329B TW099145520A TW99145520A TWI434329B TW I434329 B TWI434329 B TW I434329B TW 099145520 A TW099145520 A TW 099145520A TW 99145520 A TW99145520 A TW 99145520A TW I434329 B TWI434329 B TW I434329B
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- layer
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- etch stop
- epitaxial structure
- epitaxial
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 41
- 239000002131 composite material Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 150000004767 nitrides Chemical group 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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Description
本發明是有關於一種半導體基板,特別是指一種具蝕刻停止層的磊晶結構及其製造方法。
在製作光電元件時所選用適合作為磊晶的基板,往往卻有例如傳熱能力不佳或無導電能力等缺點,因此為了同時兼顧光電元件磊晶層結構的磊晶品質,在製造磊晶層結構的過程中,常見的一道製程是將該基板移除剝離,以利磊晶層結構的性能提昇。
為了讓該基板容易自該磊晶層結構上移除剝離,通常於該基板與磊晶層結構間形成一犧牲層,透過蝕刻移除該犧牲層,達到容易地自該磊晶層結構上移除剝離該基板的功效。
但是,在蝕刻移除該犧牲層時,容易過度蝕刻至該光電元件磊晶層結構,經常會損及該光電元件磊晶層結構,而造成光電元件品質下降。
因此,本發明之目的,即在提供一種可以保護磊晶結構的具蝕刻停止層的磊晶結構的製造方法。
因此,本發明之目的,即在提供一種可以保護磊晶結構的具蝕刻停止層的磊晶結構。
於是,本發明具蝕刻停止層的磊晶結構的製造方法,包含以下步驟:首先,於一第一基板上成長一圖樣化犧牲層,該第一基板部分面積露出,未受該圖樣化犧牲層遮蓋,接著,於該第一基板部分露出面積與圖樣化犧牲層上,側向磊晶成長一暫時磊晶層,而後,於該暫時磊晶層上成長一蝕刻停止層,再來,於該蝕刻停止層上成長一磊晶結構層。
於是,本發明具蝕刻停止層的磊晶結構,包含:一第一基板、一圖樣化犧牲層、一暫時磊晶層、一蝕刻停止層,及一磊晶結構層。該圖樣化犧牲層成長於該第一基板上,該第一基板部分面積露出,未受該圖樣化犧牲層遮蓋,該暫時磊晶層側向磊晶成長於該第一基板部分露出面積與圖樣化犧牲層上,該蝕刻停止層成長於該暫時磊晶層上,該磊晶結構層成長於該蝕刻停止層上。
本發明之功效在於透過該蝕刻停止層形成於該磊晶結構層的下方,因此,後續在蝕刻移除該圖樣化犧牲層、該暫時磊晶層時,不至過度蝕刻該磊晶結構層,進而維持光電元件品質。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之較佳實施例的詳細說明中,將可清楚的呈現。
參閱圖1,本發明具蝕刻停止層的磊晶結構及其製造方法之較佳實施例包含以下步驟:配合參閱圖2,步驟10中,於一第一基板2上成長一圖樣化犧牲層3,該第一基板2如矽基板、藍寶石基板(Al2
O3
,sapphire)、碳化矽基板、砷化鎵等,該第一基板2部分面積露出,未受該圖樣化犧牲層3遮蓋,在本較佳實施例中,該圖樣化犧牲層3為氧化物,在本較佳實施例中為氧化矽(SiO2
)。
配合參閱圖3,步驟11中,於該第一基板2部分露出面積與圖樣化犧牲層3上,側向磊晶成長一暫時磊晶層4,在本較佳實施例中,該暫時磊晶層4為氮化鎵(GaN)。
配合參閱圖4,步驟12中,於該暫時磊晶層4上成長一蝕刻停止層5,該暫時磊晶層4的蝕刻速率大於該蝕刻停止層5蝕刻速率的五倍,且該蝕刻停止層5為含鋁之氮化物的材料製成,且厚度大於0.001微米,該蝕刻停止層5的磊晶溫度範圍為500℃至1200℃間。
更進一步詳述的是,該蝕刻停止層5鋁含量大於5%,如氮化鋁、氮化鋁銦鎵等。
值得一提的是,參閱圖10、圖11與圖12,該磊晶結構也可以還包含一成長於該暫時磊晶層4上的一複合停止層8,該複合停止層8可以位於該暫時磊晶層4與該蝕刻停止層5間,也可以位於該蝕刻停止層5與一磊晶結構層6間,或是在前述兩個位置皆成長有該複合停止層8,且該複合停止層8為選自含氮或矽的材料製成,且厚度大於0.001微米,該複合停止層8的磊晶溫度範圍為500℃至1200℃間,該複合停止層8與該蝕刻停止層5共同構成多層膜式的結構,可以進一步強化避免過度蝕刻的功效。(圖皆未示)
更進一步詳述的是,當該複合停止層8為含氮時,氮之原子百分比大於20%,如氮化鎵、氮化銦鎵等,當該複合停止層8為含矽時,矽之原子百分比大於30%,如氮化矽、矽膜等。
配合參閱圖5,步驟13中,於該蝕刻停止層5上成長該磊晶結構層6,在本較佳實施例中,該磊晶結構層6可以代表是供後續不同元件磊晶使用的氮化鎵層,或該磊晶結構層6也可以代表已是光電二極體(LED,light emitter diode)等光電元件。
配合參閱圖6,步驟14中,於該磊晶結構層6上接合一第二基板7,該第二基板7可以是矽基板、含銅基板、鉬基板、軟性基板等,該第二基板7可以配合不同元件的需求,例如配合散熱需求,而選擇熱導係數較佳的材料製成。
配合參閱圖7,步驟15中,通入含氟之化學溶液,如氫氟酸(HF)、BOE(Buffered oxide etch)等,在本較佳實施例中為氫氟酸,將該圖樣化犧牲層3濕式蝕刻移除,以增加後續移除該暫時磊晶層4時,濕式蝕刻劑的反應面積,提高該暫時磊晶層4的移除速率。
配合參閱圖8,步驟16中,由於移除該圖樣化犧牲層3產生通道,將例如磷酸的蝕刻液通入通道中,以將該暫時磊晶層4濕式蝕刻移除,此時,由於該蝕刻停止層5位於該磊晶結構層6下方,因此磷酸蝕刻該暫時磊晶層4時,不會過度蝕刻該磊晶結構層6,以確保光電元件品質。
配合參閱圖9,自該磊晶結構層6上移除該蝕刻停止層5,並且將該磊晶結構層6與該第一基板2互相分離。可以採用活性離子蝕刻(reactive ion etch,ICP),或是感應耦合電漿蝕刻(inductive coupling plasma etching,RIE),或是研磨等方式,皆可達到將該蝕刻停止層5移除,且不破壞該磊晶結構層6的功效。
綜上所述,透過該蝕刻停止層5形成於該磊晶結構層6的下方,因此,後續在蝕刻移除該圖樣化犧牲層3、該暫時磊晶層4時,不至讓濕式蝕刻劑過度蝕刻該磊晶結構層6,進而維持光電元件品質,在本較佳實施例中,透過該蝕刻停止層5,因此磷酸蝕刻該暫時磊晶層4時,不會過度蝕刻該磊晶結構層6,故確實能達成本發明之目的。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
10‧‧‧步驟
11‧‧‧步驟
12‧‧‧步驟
13‧‧‧步驟
14‧‧‧步驟
15‧‧‧步驟
16‧‧‧步驟
2‧‧‧第一基板
3‧‧‧圖樣化犧牲層
4‧‧‧暫時磊晶層
5‧‧‧蝕刻停止層
6‧‧‧磊晶結構層
7‧‧‧第二基板
8‧‧‧複合停止層
圖1是流程圖,說明本發明具蝕刻停止層的磊晶結構及其製造方法的較佳實施例;
圖2是側視示意圖,說明本較佳實施例中於一第一基板上成長一圖樣化犧牲層;
圖3是側視示意圖,說明本較佳實施例中側向磊晶成長一暫時磊晶層;
圖4是側視示意圖,說明本較佳實施例中成長一蝕刻停止層;
圖5是側視示意圖,說明本較佳實施例中成長一磊晶結構層;
圖6是側視示意圖,說明本較佳實施例中接合一第二基板;
圖7是側視示意圖,說明本較佳實施例中將該圖樣化犧牲層移除;
圖8是側視示意圖,說明本較佳實施例中將磊晶結構層與第一基板互相分離;
圖9是側視示意圖,說明本較佳實施例中移除該蝕刻停止層;
圖10是側視示意圖,說明本較佳實施例的一複合停止層;
圖11是側視示意圖,說明本較佳實施例的該複合停止層;及
圖12是側視示意圖,說明本較佳實施例的該複合停止層。
2...第一基板
3...圖樣化犧牲層
4...暫時磊晶層
5...蝕刻停止層
6...磊晶結構層
Claims (17)
- 一種具蝕刻停止層的磊晶結構的製造方法,包含以下步驟:(A)於一第一基板上成長一圖樣化犧牲層,該第一基板部分面積露出,未受該圖樣化犧牲層遮蓋;(B)於該第一基板部分露出面積與圖樣化犧牲層上,側向磊晶成長一暫時磊晶層;(C)於該暫時磊晶層上成長一蝕刻停止層;及(D)於該蝕刻停止層上成長一磊晶結構層,其中,步驟(C)中,還包含一位於該蝕刻停止層與暫時磊晶層、磊晶結構層其中一者間的複合停止層。
- 根據申請專利範圍第1項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(A)中,該圖樣化犧牲層為氧化物,該磊晶結構的製造方法還包含一實施於步驟(D)後的步驟(E),於該磊晶結構層上接合一第二基板。
- 根據申請專利範圍第1項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該暫時磊晶層的蝕刻速率大於該蝕刻停止層蝕刻速率的五倍。
- 根據申請專利範圍第3項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該蝕刻停止層為含鋁之氮化物的材料製成。
- 根據申請專利範圍第4項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該蝕刻停止層為鋁含量大於5%的氮化物。
- 根據申請專利範圍第2項所述之具蝕刻停止層的磊晶結構的製造方法,還包含一實施於步驟(E)後的步驟(F),通入含氟之化學溶液將該圖樣化犧牲層移除。
- 根據申請專利範圍第6項所述之具蝕刻停止層的磊晶結構的製造方法,還包含一實施於步驟(F)後的步驟(G),通入蝕刻液將該暫時磊晶層移除。
- 根據申請專利範圍第1項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該複合停止層為選自含氮或矽的材料製成。
- 根據申請專利範圍第8項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該複合停止層的氮含量大於20%。
- 根據申請專利範圍第8項所述之具蝕刻停止層的磊晶結構的製造方法,步驟(C)中,該複合停止層的矽含量大於30%。
- 一種具蝕刻停止層的磊晶結構,包含:一第一基板;一圖樣化犧牲層,成長於該第一基板上,該第一基板部分面積露出,未受該圖樣化犧牲層遮蓋;一暫時磊晶層,側向磊晶成長於該第一基板部分露出面積與圖樣化犧牲層上;一蝕刻停止層,成長於該暫時磊晶層上;一磊晶結構層,成長於該蝕刻停止層上;及一複合停止層,位於該蝕刻停止層與暫時磊晶層、 磊晶結構層其中一者間。
- 根據申請專利範圍第11項所述之具蝕刻停止層的磊晶結構,其中,該圖樣化犧牲層為氧化矽,該暫時磊晶層為氮化鎵。
- 根據申請專利範圍第11項所述之具蝕刻停止層的磊晶結構,其中,該蝕刻停止層為含鋁之氮化物的材料製成。
- 根據申請專利範圍第13項所述之具蝕刻停止層的磊晶結構,其中,該蝕刻停止層為鋁含量大於5%的氮化物。
- 根據申請專利範圍第11項所述之具蝕刻停止層的磊晶結構,其中,該複合停止層為選自含氮或矽的材料製成。
- 根據申請專利範圍第15項所述之具蝕刻停止層的磊晶結構,其中,該複合停止層的氮含量大於20%。
- 根據申請專利範圍第15項所述之具蝕刻停止層的磊晶結構,其中,該複合停止層的矽含量大於30%。
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