CN102569551A - 具蚀刻停止层的磊晶结构及其制造方法 - Google Patents
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- 238000005530 etching Methods 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 150000001875 compounds Chemical class 0.000 claims description 35
- 230000001052 transient effect Effects 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000004575 stone Substances 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种具蚀刻停止层的磊晶结构及其制造方法,所述制造方法包含以下步骤:首先,于一层第一基板上成长一图样化牺牲层,该第一基板部分面积露出,未受该图样化牺牲层遮盖,接着,于该第一基板部分露出面积与图样化牺牲层上,侧向磊晶成长一层暂时磊晶层,而后,于该暂时磊晶层上成长一层蚀刻停止层,再来,于该蚀刻停止层上成长一层磊晶结构层,通过该蚀刻停止层形成于该磊晶结构层的下方,因此,后续在蚀刻移除该图样化牺牲层、该暂时磊晶层时,不至过度蚀刻该磊晶结构层,进而维持光电元件品质。
Description
技术领域
本发明涉及一种半导体基板,特别是涉及一种具蚀刻停止层的磊晶结构及其制造方法。
背景技术
在制作光电元件时所选用适合作为磊晶的基板,往往却有例如传热能力不佳或无导电能力等缺点,因此为了同时兼顾光电元件磊晶层结构的磊晶品质,在制造磊晶层结构的过程中,常见的一道制程是将该基板移除剥离,以利磊晶层结构的性能提升。
为了让该基板容易自该磊晶层结构上移除剥离,通常于该基板与磊晶层结构间形成一牺牲层,通过蚀刻移除该牺牲层,达到容易地自该磊晶层结构上移除剥离该基板的功效。
但是,在蚀刻移除该牺牲层时,容易过度蚀刻至该光电元件磊晶层结构,经常会损及该光电元件磊晶层结构,而造成光电元件品质下降。
发明内容
本发明的目的在于提供一种可以保护磊晶结构的具蚀刻停止层的磊晶结构的制造方法。
本发明的另一个目的在于提供一种可以保护磊晶结构的具蚀刻停止层的磊晶结构。
本发明具蚀刻停止层的磊晶结构的制造方法,该制造方法包含以下步骤:步骤一,于一层第一基板上成长一层图样化牺牲层,该第一基板部分面积露出,未受该图样化牺牲层遮盖,步骤二,于该第一基板部分露出面积与图样化牺牲层上,侧向磊晶成长一层暂时磊晶层,步骤三,于该暂时磊晶层上成长一层蚀刻停止层,步骤四,于该蚀刻停止层上成长一层磊晶结构层。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤一中,该图样化牺牲层为氧化物,该磊晶结构的制造方法还包含一个实施于步骤四之后的步骤五,于该磊晶结构层上接合一层第二基板。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,该暂时磊晶层的蚀刻速率大于该蚀刻停止层蚀刻速率的五倍。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,该蚀刻停止层为含铝之氮化物的材料制成。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,该蚀刻停止层为铝之原子百分比大于5%的氮化物。
本发明具蚀刻停止层的磊晶结构的制造方法,还包含一个实施于步骤五之后的步骤六,通入含氟之化学溶液将该图样化牺牲层移除。
本发明具蚀刻停止层的磊晶结构的制造方法,还包含一个实施于步骤六之后的步骤七,通入蚀刻液将该暂时磊晶层移除。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,还包含位于该蚀刻停止层与暂时磊晶层之间和/或该蚀刻停止层与磊晶结构层之间的复合停止层。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,所述复合停止层为选自含氮或硅的材料制成。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,当所述复合停止层为含氮时,所述复合停止层的氮之原子百分比大于20%。
本发明具蚀刻停止层的磊晶结构的制造方法,步骤三中,当所述复合停止层为含硅时,所述复合停止层的硅之原子百分比大于30%。
本发明具蚀刻停止层的磊晶结构,包含一层第一基板,以及一层磊晶结构层,该磊晶结构还包含一层图样化牺牲层、一层暂时磊晶层,及一层蚀刻停止层,该图样化牺牲层成长于该第一基板上,该第一基板部分面积露出,未受该图样化牺牲层遮盖,该暂时磊晶层侧向磊晶成长于该第一基板部分露出面积与图样化牺牲层上,该蚀刻停止层成长于该暂时磊晶层上,该磊晶结构层成长于该蚀刻停止层上。
本发明具蚀刻停止层的磊晶结构,该图样化牺牲层为氧化硅,该暂时磊晶层为氮化镓。
本发明具蚀刻停止层的磊晶结构,该蚀刻停止层为含铝之氮化物的材料制成。
本发明具蚀刻停止层的磊晶结构,该蚀刻停止层为铝之原子百分比大于5%的氮化物。
本发明具蚀刻停止层的磊晶结构,还包含位于该蚀刻停止层与暂时磊晶层之间和/或该蚀刻停止层与磊晶结构层之间的复合停止层。
本发明具蚀刻停止层的磊晶结构,所述复合停止层为选自含氮或硅的材料制成。
本发明具蚀刻停止层的磊晶结构,当所述复合停止层为含氮时,所述复合停止层的氮之原子百分比大于20%。
本发明具蚀刻停止层的磊晶结构,当所述复合停止层为含硅时,所述复合停止层的硅之原子百分比大于30%。
本发明的有益效果在于:通过该蚀刻停止层形成于该磊晶结构层的下方,因此,后续在蚀刻移除该图样化牺牲层、该暂时磊晶层时,不至过度蚀刻该磊晶结构层,进而维持光电元件品质。
附图说明
图1是本发明具蚀刻停止层的磊晶结构及其制造方法的较佳实施例的流程图;
图2是本较佳实施例中于一层第一基板上成长一层图样化牺牲层的侧视示意图;
图3是本较佳实施例中侧向磊晶成长一层暂时磊晶层的侧视示意图;
图4是本较佳实施例中成长一层蚀刻停止层的侧视示意图;
图5是本较佳实施例中成长一层磊晶结构层的侧视示意图;
图6是本较佳实施例中接合一层第二基板的侧视示意图;
图7是本较佳实施例中将该图样化牺牲层移除的侧视示意图;
图8是本较佳实施例中将磊晶结构层与第一基板互相分离的侧视示意图;
图9是本较佳实施例中移除该蚀刻停止层的侧视示意图;
图10是本较佳实施例的复合停止层的一侧视示意图;
图11是本较佳实施例的所述复合停止层的另一侧视示意图;
图12是本较佳实施例的所述复合停止层的又一侧视示意图。
具体实施方式
下面结合附图及实施例对本发明进行详细说明。
参阅图1,本发明具蚀刻停止层的磊晶结构及其制造方法之较佳实施例包含以下步骤:
配合参阅图2,步骤10中,于一层第一基板2上成长一层图样化牺牲层3,该第一基板2如硅基板、蓝宝石基板(Al2O3,sapphire)、碳化硅基板、砷化镓等,该第一基板2部分面积露出,未受该图样化牺牲层3遮盖,在本较佳实施例中,该图样化牺牲层3为氧化物,在本较佳实施例中为氧化硅(SiO2)。
配合参阅图3,步骤11中,于该第一基板2部分露出面积与图样化牺牲层3上,侧向磊晶成长一层暂时磊晶层4,在本较佳实施例中,该暂时磊晶层4为氮化镓(GaN)。
配合参阅图4,步骤12中,于该暂时磊晶层4上成长一层蚀刻停止层5,该暂时磊晶层4的蚀刻速率大于该蚀刻停止层5蚀刻速率的五倍,且该蚀刻停止层5为含铝之氮化物的材料制成,且厚度大于0.001微米,该蚀刻停止层5的磊晶温度范围为500℃至1200℃间。
更进一步详述的是,该蚀刻停止层5铝之原子百分比大于5%,如氮化铝、氮化铝铟镓等。
值得一提的是,参阅图10、图11与图12,该磊晶结构也可以还包含成长于该暂时磊晶层4上的一层复合停止层8,该复合停止层8可以位于该暂时磊晶层4与该蚀刻停止层5间(如图10),也可以位于该蚀刻停止层5与一层磊晶结构层6间(如图11),或是在前述两个位置皆成长有该复合停止层8(如图12),且该复合停止层8为选自含氮或硅的材料制成,且厚度大于0.001微米,该复合停止层8的磊晶温度范围为500℃至1200℃间,该复合停止层8与该蚀刻停止层5共同构成多层膜式的结构,可以进一步强化避免过度蚀刻的功效。(图皆未示)
更进一步详述的是,当所述复合停止层8为含氮时,氮之原子百分比大于20%,如氮化镓、氮化铟镓等,当所述复合停止层8为含硅时,硅之原子百分比大于30%,如氮化硅、硅膜等。
配合参阅图5,步骤13中,于该蚀刻停止层5上成长该磊晶结构层6,在本较佳实施例中,该磊晶结构层6可以代表是供后续不同元件磊晶使用的氮化镓层,或该磊晶结构层6也可以代表已是光电二极管(LED,light emitter diode)等光电元件。
配合参阅图6,步骤14中,于该磊晶结构层6上接合一层第二基板7,该第二基板7可以是硅基板、含铜基板、钼基板、软性基板等,该第二基板7可以配合不同元件的需求,例如配合散热需求,而选择热导系数较佳的材料制成。
配合参阅图7,步骤15中,通入含氟之化学溶液,如氢氟酸(HF)、BOE(Buffered oxide etch)等,在本较佳实施例中为氢氟酸,将该图样化牺牲层3湿式蚀刻移除,以增加后续移除该暂时磊晶层4时,湿式蚀刻剂的反应面积,提高该暂时磊晶层4的移除速率。
配合参阅图8,步骤16中,由于移除该图样化牺牲层3产生通道,将例如磷酸的蚀刻液通入通道中,以将该暂时磊晶层4湿式蚀刻移除,此时,由于该蚀刻停止层5位于该磊晶结构层6下方,因此磷酸蚀刻该暂时磊晶层4时,不会过度蚀刻该磊晶结构层6,以确保光电元件品质。
配合参阅图9,自该磊晶结构层6上移除该蚀刻停止层5,并且将该磊晶结构层6与该第一基板2互相分离。可以采用活性离子蚀刻(reactive ion etch,ICP),或是感应耦合电浆蚀刻(inductive couplingplasma etching,RIE),或是研磨等方式,皆可达到将该蚀刻停止层5移除,且不破坏该磊晶结构层6的功效。
综上所述,通过该蚀刻停止层5形成于该磊晶结构层6的下方,因此,后续在蚀刻移除该图样化牺牲层3、该暂时磊晶层4时,不至让湿式蚀刻剂过度蚀刻该磊晶结构层6,进而维持光电元件品质,在本较佳实施例中,通过该蚀刻停止层5,因此磷酸蚀刻该暂时磊晶层4时,不会过度蚀刻该磊晶结构层6,所以确实能达成本发明目的。
Claims (19)
1.一种具蚀刻停止层的磊晶结构的制造方法,其特征在于该制造方法包含以下步骤:
一、于一层第一基板上成长一层图样化牺牲层,该第一基板部分面积露出,未受该图样化牺牲层遮盖;
二、于该第一基板部分露出面积与图样化牺牲层上,侧向磊晶成长一层暂时磊晶层;
三、于该暂时磊晶层上成长一层蚀刻停止层;
四、于该蚀刻停止层上成长一层磊晶结构层。
2.根据权利要求1所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤一中,该图样化牺牲层为氧化物,该磊晶结构的制造方法还包含一个实施于步骤四之后的步骤五,于该磊晶结构层上接合一层第二基板。
3.根据权利要求1所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,该暂时磊晶层的蚀刻速率大于该蚀刻停止层蚀刻速率的五倍。
4.根据权利要求3所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,该蚀刻停止层为含铝之氮化物的材料制成。
5.根据权利要求4所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,该蚀刻停止层为铝之原子百分比大于5%的氮化物。
6.根据权利要求2所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:还包含一个实施于步骤五之后的步骤六,通入含氟之化学溶液将该图样化牺牲层移除。
7.根据权利要求6所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:还包含一个实施于步骤六之后的步骤七,通入蚀刻液将该暂时磊晶层移除。
8.根据权利要求1所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,还包含位于该蚀刻停止层与暂时磊晶层之间和/或该蚀刻停止层与磊晶结构层之间的复合停止层。
9.根据权利要求8所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,所述复合停止层为选自含氮或硅的材料制成。
10.根据权利要求9所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,当所述复合停止层为含氮时,该复合停止层的氮之原子百分比大于20%。
11.根据权利要求9所述的具蚀刻停止层的磊晶结构的制造方法,其特征在于:步骤三中,当所述复合停止层为含硅时,该复合停止层的硅之原子百分比大于30%。
12.一种具蚀刻停止层的磊晶结构,包含:一层第一基板,以及一层磊晶结构层,其特征在于:该磊晶结构还包含一层图样化牺牲层、一层暂时磊晶层,及一层蚀刻停止层,该图样化牺牲层成长于该第一基板上,该第一基板部分面积露出,未受该图样化牺牲层遮盖,该暂时磊晶层侧向磊晶成长于该第一基板部分露出面积与图样化牺牲层上,该蚀刻停止层成长于该暂时磊晶层上,该磊晶结构层成长于该蚀刻停止层上。
13.根据权利要求12所述的具蚀刻停止层的磊晶结构,其特征在于:该图样化牺牲层为氧化硅,该暂时磊晶层为氮化镓。
14.根据权利要求12所述的具蚀刻停止层的磊晶结构,其特征在于:该蚀刻停止层为含铝之氮化物的材料制成。
15.根据权利要求14所述的具蚀刻停止层的磊晶结构,其特征在于:该蚀刻停止层为铝之原子百分比大于5%的氮化物。
16.根据权利要求12所述的具蚀刻停止层的磊晶结构,其特征在于:还包含位于该蚀刻停止层与暂时磊晶层之间和/或该蚀刻停止层与磊晶结构层之间的复合停止层。
17.根据权利要求16所述的具蚀刻停止层的磊晶结构,其特征在于:所述复合停止层为选自含氮或硅的材料制成。
18.根据权利要求17所述的具蚀刻停止层的磊晶结构,其特征在于:当所述复合停止层为含氮时,所述复合停止层的氮之原子百分比大于20%。
19.根据权利要求17所述的具蚀刻停止层的磊晶结构,其特征在于:当所述复合停止层为含硅时,所述复合停止层的硅之原子百分比大于30%。
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