TWI427662B - Field emission cathod device and field emission display - Google Patents
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本發明涉及一種場發射陰極裝置及場發射顯示器。 The invention relates to a field emission cathode device and a field emission display.
場發射陰極裝置在低溫或者室溫下工作，與電真空器件中的熱發射裝置相比具有能耗低、回應速度快及低放電等優點，因此用場發射陰極裝置替代電真空器件中的熱發射裝置成為了人們研究的一熱點。 The field emission cathode device works at low temperature or room temperature, and has the advantages of low energy consumption, fast response speed and low discharge compared with the heat emitting device in the electric vacuum device, so the field emission cathode device is used to replace the heat in the electric vacuum device. Launching devices have become a hot spot for people to study.
先前的場發射陰極裝置一般包括一導電基體和一根奈米碳管，該奈米碳管的一端作為場發射尖端，奈米碳管的另一端與該導電基體電聯接，請參見"Growth of single-walled Carbon nanotubes on the given Locations for AFM Tips",Chin Li Cheung,Appl.Phys.Lett.,Vol.76,No.21,22 May 2000.然而，上述場發射陰極裝置的發射原理為施加一電場於所述場發射陰極裝置，場發射陰極裝置中的奈米碳管在電場的作用下發射出電子。然而，由於奈米碳管的場發射能力有限，採用奈米碳管直接發射電子導致該種場發射陰極裝置的場發射電流較小，所需的工作電壓較高，導致場發射陰極裝置的壽命較短。採用該種場發射陰極裝置的場發射顯示器也存在同樣的問題。 The prior field emission cathode device generally comprises a conductive substrate and a carbon nanotube. One end of the carbon nanotube is used as a field emission tip, and the other end of the carbon nanotube is electrically coupled to the conductive substrate. Please refer to "Growth of Single-walled Carbon nanotubes on the given Locations for AFM Tips", Chin Li Cheung, Appl. Phys. Lett., Vol. 76, No. 21, 22 May 2000. However, the emission principle of the above field emission cathode device is to apply one. An electric field is applied to the field emission cathode device, and the carbon nanotubes in the field emission cathode device emit electrons under the action of an electric field. However, due to the limited field emission capability of the carbon nanotubes, the direct emission of electrons by the carbon nanotubes causes the field emission current of the field emission cathode device to be small, and the required operating voltage is high, resulting in the lifetime of the field emission cathode device. Shorter. The same problem exists with field emission displays using such field emission cathode devices.
有鑒於此，提供一種場發射電流較大，所需的工作電壓較低，且壽命較長的場發射陰極裝置及場發射顯示器實有必要。 In view of this, it is necessary to provide a field emission cathode device and a field emission display which have a large field emission current, a low required operating voltage, and a long lifetime.
一種場發射陰極裝置，所述場發射陰極裝置包括：一絕緣基板，該絕緣基板具有一表面；一第一電極與一第二電極相互間隔地設置於所述絕緣基板的所述表面；一陰極發射體，該陰極發射體與所述第一電極電連接；所述場發射陰極裝置進一步包括一次級電子發射材料，所述次級電子發射材料至少部份設置於所述第一電極和第二電極之間，且所述陰極發射體與所述次級電子發射材料相對且間隔設置，所述陰極發射體的延長線與所述次級電子發射材料相交。 A field emission cathode device comprising: an insulating substrate having a surface; a first electrode and a second electrode are disposed on the surface of the insulating substrate at a distance from each other; a cathode An emitter that is electrically connected to the first electrode; the field emission cathode device further includes a primary electron emission material, the secondary electron emission material being at least partially disposed on the first electrode and the second Between the electrodes, and the cathode emitter is disposed opposite and spaced apart from the secondary electron-emitting material, an extension of the cathode emitter intersecting the secondary electron-emitting material.
一種場發射陰極裝置，所述場發射陰極裝置包括：一絕緣基板，該絕緣基板具有一表面；一第一電極設置於所述絕緣基板的所述表面；一陰極發射體，該陰極發射體與所述第一電極電連接；所述場發射陰極裝置進一步包括一第二電極，所述第二電極為導電材料與所述次級電子發射材料複合形成一複合結構，所述陰極發射體的延長線與所述次級電子發射材料相交。 A field emission cathode device comprising: an insulating substrate having a surface; a first electrode disposed on the surface of the insulating substrate; a cathode emitter, the cathode emitter and The first electrode is electrically connected; the field emission cathode device further includes a second electrode, wherein the second electrode is a composite material of the conductive material and the secondary electron emission material to form a composite structure, and the cathode emitter is extended A line intersects the secondary electron emissive material.
一種場發射陰極裝置，其包括：一絕緣基底；複數行電極引線與列電極引線分別平行且等間隔設置於絕緣基底上，該複數行電極引線與複數列電極引線相互交叉設置，每二相鄰的行電極引線與二相鄰的列電極引線形成一網格，行電極引線與列電極引線之間電絕緣；複數場發射單元，每一場發射單元對應一網格設置，每一場發射單元進一步包括一第一電極；一陰極發射體，該陰極發射體與第一電極電連接；一第二電極，該第二電極與所述第一電極之間形成一電場，在該電場作用下由所述陰極發射體發射電子 ；所述陰極發射體平行於所述絕緣基底的表面，所述場發射陰極裝置進一步包括一次級電子發射材料，所述陰極發射體與所述次級電子發射材料間隔且相對設置，所述陰極發射體的延長線與所述次級電子發射材料相交，由所述陰極發射體發射的電子轟擊所述次級電子發射材料。 A field emission cathode device comprising: an insulating substrate; the plurality of row electrode leads and the column electrode leads are respectively parallel and equally spaced on the insulating substrate, and the plurality of row electrode leads and the plurality of column electrode leads are arranged to cross each other, each adjacent to each other The row electrode lead forms a grid with two adjacent column electrode leads, and the row electrode lead and the column electrode lead are electrically insulated; the plurality of field emission units each of which has a grid arrangement, and each field emission unit further includes a first electrode; a cathode emitter electrically connected to the first electrode; a second electrode, an electric field formed between the second electrode and the first electrode, under the electric field Cathode emitter emitting electron The cathode emitter is parallel to a surface of the insulating substrate, the field emission cathode device further comprising a primary electron emission material, the cathode emitter being spaced apart from and opposite to the secondary electron emission material, the cathode An extension of the emitter intersects the secondary electron emissive material, and electrons emitted by the cathode emitter bombard the secondary electron emissive material.
一種場發射顯示器，其包括：一螢光屏陽極結構及與該螢光屏陽極結構間隔設置的一場發射陰極裝置，該場發射陰極裝置包括：一絕緣基底；複數行電極引線與列電極引線分別平行且等間隔設置於絕緣基底上，該複數行電極引線與複數列電極引線相互交叉設置，每二相鄰的行電極引線與二相鄰的列電極引線形成一網格，行電極引線與列電極引線之間電絕緣；複數場發射單元，每一場發射單元對應一網格設置，每一場發射單元進一步包括一第一電極；一陰極發射體，該陰極發射體與第一電極電連接；一第二電極，該第二電極與所述第一電極之間形成一電場，在該電場作用下由所述陰極發射體發射電子；所述陰極發射體平行於所述絕緣基底的表面，所述場發射單元進一步包括一次級電子發射材料，所述陰極發射體與所述次級電子發射材料間隔且相對設置，所述陰極發射體的延長線與所述次級電子發射材料相交，由所述陰極發射體發射的電子轟擊所述次級電子發射材料。 A field emission display comprising: a phosphor screen anode structure and a field emission cathode device spaced apart from the phosphor screen anode structure, the field emission cathode device comprising: an insulating substrate; the plurality of row electrode leads and the column electrode leads respectively Parallel and equally spaced on the insulating substrate, the plurality of row electrode leads and the plurality of column electrode leads are disposed to intersect each other, and each two adjacent row electrode leads and two adjacent column electrode leads form a grid, row electrode leads and columns Electrically insulated between the electrode leads; a plurality of field emission units, each field emission unit corresponding to a grid, each field emission unit further comprising a first electrode; a cathode emitter, the cathode emitter being electrically connected to the first electrode; a second electrode, an electric field is formed between the second electrode and the first electrode, and electrons are emitted by the cathode emitter under the electric field; the cathode emitter is parallel to a surface of the insulating substrate, The field emission unit further includes a primary electron emission material, and the cathode emitter is spaced apart from and opposite to the secondary electron emission material , The extension line of the cathode emitter and said secondary electron emitting material intersect, from said emitter cathode emitted electrons bombarding the secondary electron emitting material.
相較於先前技術，本發明提供的場發射陰極裝置及場發射顯示器具有以下優點：其一，通過次級電子發射材料的電流放大性能，該場發射陰極裝置在較小的工作電壓下就可以獲得較大的場發射電流；其二，所述陰極發射體與所述次級電子發射材料相對設置，且所述次級電子發射材料設置於所述第一電極和第二電極之間 ，因此，陰極發射體發射出的電子極易在第一電極和第二電極的電場作用下轟擊所述次級電子發射材料，從而增大了所述場發射陰極裝置的發射電流；其三，通過次級電子發射材料的電流放大性能，可減小施加於所述第一電極和第二電極上的電壓，從而使整個場發射陰極裝置的壽命增長，進而使採用該種場發射陰極裝置的場發射顯示器的壽命也增長。 Compared with the prior art, the field emission cathode device and the field emission display provided by the invention have the following advantages: First, by the current amplification performance of the secondary electron emission material, the field emission cathode device can be operated at a small operating voltage. Obtaining a larger field emission current; second, the cathode emitter is disposed opposite to the secondary electron emission material, and the secondary electron emission material is disposed between the first electrode and the second electrode Therefore, the electrons emitted from the cathode emitter easily bombard the secondary electron-emitting material under the electric field of the first electrode and the second electrode, thereby increasing the emission current of the field emission cathode device; By the current amplification performance of the secondary electron-emitting material, the voltage applied to the first electrode and the second electrode can be reduced, thereby increasing the lifetime of the entire field emission cathode device, thereby enabling the use of the field emission cathode device. The lifetime of field emission displays has also increased.
10、20、30、40、50、60、720‧‧‧場發射陰極裝置 10, 20, 30, 40, 50, 60, 720‧‧ ‧ field emission cathode devices
11、21、31、41、51‧‧‧絕緣基板 11, 21, 31, 41, 51‧‧‧ insulating substrate
12、22、32、42、52、62‧‧‧第一電極 12, 22, 32, 42, 52, 62‧‧‧ first electrode
14、24、34、44、54、64‧‧‧第二電極 14, 24, 34, 44, 54, 64‧‧‧ second electrode
16、26、36、46、56、66‧‧‧陰極發射體 16, 26, 36, 46, 56, 66‧‧‧ cathode emitters
18、28、38、48、68、78、544‧‧‧次級電子發射材料 18, 28, 38, 48, 68, 78, 544‧‧‧ secondary electron emission materials
19‧‧‧第三電極板 19‧‧‧ third electrode plate
61、722‧‧‧絕緣基底 61, 722‧‧ ‧ insulating substrate
70‧‧‧場發射顯示器 70‧‧ ‧ field emission display
100、6100、7300‧‧‧場發射單元 100, 6100, 7300‧‧‧ field emission unit
112‧‧‧絕緣基板的第一表面 112‧‧‧The first surface of the insulating substrate
162、662‧‧‧電子發射尖端 162, 662‧‧‧Electronic emission tip
182、282、382‧‧‧電子發射表面 182, 282, 382‧‧‧ electron emission surface
191‧‧‧第三電極 191‧‧‧ third electrode
192‧‧‧基板 192‧‧‧Substrate
542‧‧‧導電材料 542‧‧‧Electrical materials
610‧‧‧網格 610‧‧‧Grid
612、724‧‧‧行電極引線 612, 724‧‧‧ row electrode lead
614‧‧‧列電極引線 614‧‧‧ column electrode lead
616‧‧‧介質絕緣層 616‧‧‧ dielectric insulation
624‧‧‧固定件 624‧‧‧Fixed parts
710‧‧‧陽極裝置 710‧‧‧Anode device
712‧‧‧絕緣透明基底 712‧‧‧Insulated transparent substrate
714‧‧‧透明陽極 714‧‧‧Transparent anode
716‧‧‧螢光層 716‧‧‧Fluorescent layer
718‧‧‧絕緣支撐體 718‧‧‧Insulation support
圖1係本發明第一實施例的場發射陰極裝置的側視圖。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a side view of a field emission cathode device of a first embodiment of the present invention.
圖2係本發明第一實施例的場發射陰極裝置的俯視圖。 Fig. 2 is a plan view showing a field emission cathode device of a first embodiment of the present invention.
圖3係本發明第二實施例的場發射陰極裝置的側視圖。 Figure 3 is a side view of a field emission cathode device of a second embodiment of the present invention.
圖4係本發明第三實施例的場發射陰極裝置的側視圖。 Figure 4 is a side view of a field emission cathode device of a third embodiment of the present invention.
圖5係本發明第四實施例的場發射陰極裝置的側視圖。 Figure 5 is a side view of a field emission cathode device of a fourth embodiment of the present invention.
圖6係本發明第五實施例的場發射陰極裝置的側視圖。 Figure 6 is a side view of a field emission cathode device of a fifth embodiment of the present invention.
圖7係本發明第六實施例的場發射陰極裝置的俯視圖。 Figure 7 is a plan view of a field emission cathode device of a sixth embodiment of the present invention.
圖8係本發明第六實施例的場發射陰極裝置的側視圖。 Figure 8 is a side view of a field emission cathode device of a sixth embodiment of the present invention.
圖9係本發明第七實施例的場發射顯示器的側視圖。 Figure 9 is a side elevational view of a field emission display of a seventh embodiment of the present invention.
以下將結合附圖對本發明的場發射陰極裝置及場發射顯示器作進一步的詳細說明。 The field emission cathode device and the field emission display of the present invention will be further described in detail below with reference to the accompanying drawings.
請參閱圖1及圖2，本發明第一實施例提供一種場發射陰極裝置10。所述場發射陰極裝置10包括：一絕緣基板11及設置於絕緣基板11上的一第一電極12、一第二電極14、至少一陰極發射體16及一 次級電子發射材料18。所述第一電極12、一第二電極14、至少一陰極發射體16及一次級電子發射材料18共同構成一場發射單元100。該絕緣基板11具有一第一表面112。所述第一電極12和所述第二電極14設置於所述絕緣基板11的一第一表面112且相互間隔設置。該陰極發射體16與第一電極12電連接，且與第二電極14間隔設置。該次級電子發射材料18至少部份設置在所述第一電極12與第二電極14之間。該次級電子發射材料18與所述陰極發射體16間隔且相對設置。 Referring to FIG. 1 and FIG. 2, a first embodiment of the present invention provides a field emission cathode device 10. The field emission cathode device 10 includes: an insulating substrate 11 and a first electrode 12 disposed on the insulating substrate 11, a second electrode 14, at least one cathode emitter 16 and a Secondary electron emission material 18. The first electrode 12, a second electrode 14, at least one cathode emitter 16 and primary electron emissive material 18 together form a field emission unit 100. The insulating substrate 11 has a first surface 112. The first electrode 12 and the second electrode 14 are disposed on a first surface 112 of the insulating substrate 11 and are spaced apart from each other. The cathode emitter 16 is electrically connected to the first electrode 12 and spaced apart from the second electrode 14. The secondary electron emission material 18 is at least partially disposed between the first electrode 12 and the second electrode 14. The secondary electron emissive material 18 is spaced apart from and opposite the cathode emitter 16.
所述絕緣基板11用於承載所述第一電極12和第二電極14等設置於其上的元件。所述絕緣基板11可為陶瓷基板、玻璃基板、樹脂基板、石英基板等。所述絕緣基板11的大小與厚度不限，本領域技術人員可根據實際需要選擇。本實施例中，所述絕緣基板11為一玻璃基板。 The insulating substrate 11 is used to carry the elements on which the first electrode 12 and the second electrode 14 are disposed. The insulating substrate 11 may be a ceramic substrate, a glass substrate, a resin substrate, a quartz substrate, or the like. The size and thickness of the insulating substrate 11 are not limited, and those skilled in the art can select according to actual needs. In this embodiment, the insulating substrate 11 is a glass substrate.
所述第一電極12與所述第二電極14的形狀可為正方體、長方體或圓柱體。所述第一電極12與第二電極14的形狀沒有限制。所述第一電極12與第二電極14均為導電體，具體地，其材料可選擇為銅、鋁、金或銀等金屬，或者銦錫氧化物(ITO)、導電漿料等。本實施例中，該第一電極12與第二電極14的材料為烘乾後或燒結後的導電漿料。 The shape of the first electrode 12 and the second electrode 14 may be a square, a rectangular parallelepiped or a cylinder. The shape of the first electrode 12 and the second electrode 14 is not limited. The first electrode 12 and the second electrode 14 are both electrically conductive, and specifically, the material thereof may be selected from a metal such as copper, aluminum, gold or silver, or indium tin oxide (ITO), a conductive paste or the like. In this embodiment, the material of the first electrode 12 and the second electrode 14 is a conductive paste after drying or sintering.
所述陰極發射體16設置於所述第一電極12的遠離絕緣基板11的表面。所述場發射陰極裝置10可包括一陰極發射體16或複數陰極發射體16。所述陰極發射體16為線狀電子發射體，如：矽線、奈米碳管、碳纖維及奈米碳管線等中的一種或複數種。所述陰極發射體16基本平行於所述絕緣基底11的第一表面112且通過所述第一 電極12與所述絕緣基底11間隔設置。該陰極發射體16的一端與所述第一電極12電性連接，該陰極發射體16的另一端向所述第二電極14延伸作為一電子發射端162，該電子發射端162為陰極發射體16遠離第一電極12的一端。該電子發射端162與所述次級電子發射材料18間隔且相對設置。本實施例中，所述場發射陰極裝置10包括複數奈米碳管線作為所述複數陰極發射體16，該複數陰極發射體16可以相互平行且等間隔設置也可以不平行等間隔設置。所述奈米碳管線為由複數奈米碳管組成的純奈米碳管結構，所述奈米碳管線包括複數奈米碳管相互通過凡得瓦力結合形成一自支撐結構。 The cathode emitter 16 is disposed on a surface of the first electrode 12 that is away from the insulating substrate 11. The field emission cathode device 10 can include a cathode emitter 16 or a plurality of cathode emitters 16. The cathode emitter 16 is a linear electron emitter such as one or more of a ruthenium wire, a carbon nanotube, a carbon fiber, and a carbon nanotube. The cathode emitter 16 is substantially parallel to the first surface 112 of the insulating substrate 11 and passes through the first The electrode 12 is spaced apart from the insulating substrate 11. One end of the cathode emitter 16 is electrically connected to the first electrode 12, and the other end of the cathode emitter 16 extends toward the second electrode 14 as an electron emission end 162, and the electron emission end 162 is a cathode emitter. 16 is away from one end of the first electrode 12. The electron emission end 162 is spaced apart from and opposite to the secondary electron emission material 18. In this embodiment, the field emission cathode device 10 includes a plurality of nanocarbon pipelines as the plurality of cathode emitters 16, and the plurality of cathode emitters 16 may be disposed in parallel with each other at equal intervals or may be disposed at equal intervals. The nano carbon pipeline is a pure carbon nanotube structure composed of a plurality of carbon nanotubes, and the nanocarbon pipeline includes a plurality of carbon nanotubes combined with each other to form a self-supporting structure.
所述次級電子發射材料18至少部份位於所述第一電極12與所述第二電極14之間。所述次級電子發射材料18可設置在所述第二電極14的表面，或者，所述次級電子發射材料18可設置在所述絕緣基底11的第一表面112。所述次級電子發射材料18與所述陰極發射體16相對設置，所謂“相對設置”係指所述陰極發射體16的延長線與所述級電子發射層18相交。所述次級電子發射材料18的形狀沒有限制。所述次級電子發射材料18的材料為可以在電子的轟擊下發射出次級電子的材料。所述次級電極發材料18的材料可為氧化鎂、氧化鈹、氧化鋇、氧化銫、氧化鈣、氧化鍶、氟化鎂或氟化鈹。本實施例中，所述次級電子發射材料18直接設置在所述絕緣基底11的第一表面112並與所述陰極發射體16相對且間隔設置，且所述次級電子發射材料18設置於所述第二電極14的表面。 The secondary electron emission material 18 is at least partially located between the first electrode 12 and the second electrode 14. The secondary electron emission material 18 may be disposed on a surface of the second electrode 14, or the secondary electron emission material 18 may be disposed on the first surface 112 of the insulation substrate 11. The secondary electron-emitting material 18 is disposed opposite the cathode emitter 16, and the term "relatively disposed" means that the extension of the cathode emitter 16 intersects the level electron-emitting layer 18. The shape of the secondary electron-emitting material 18 is not limited. The material of the secondary electron-emitting material 18 is a material that can emit secondary electrons under the bombardment of electrons. The material of the secondary electrode hair material 18 may be magnesium oxide, cerium oxide, cerium oxide, cerium oxide, calcium oxide, cerium oxide, magnesium fluoride or cerium fluoride. In this embodiment, the secondary electron emission material 18 is directly disposed on the first surface 112 of the insulating substrate 11 and opposite to the cathode emitter 16 and spaced apart, and the secondary electron emission material 18 is disposed on The surface of the second electrode 14.
進一步地，所述次級電子發射材料18具有至少一電子發射表面182面對所述陰極發射體16設置。所述次級電子發射材料18的所 述電子發射表面182可為平面或曲面。所述電子發射表面182可形成有凹凸結構，其增大所述電子發射表面182的表面積。所述電子發射表面182可背向所述絕緣基板11設置。當所述電子發射表面182為平面時，所述電子發射表面182與所述絕緣基板11的第一表面112形成一角度α，該角度α大於0度且小於等於90度。即，所述陰極發射體16的延長線與所述電子發射表面182形成一角度α，該角度α大於0度且小於等於90度。本實施例中，所述電子發射表面182垂直於所述絕緣基底11的第一表面112且面對所述陰極發射體16設置。所述場發射陰極裝置10進一步可包括一第三電極板19，該第三電極板19與所述絕緣基板11間隔設置。該第三電極板19包括一基板192及一第三電極191，所述第三電極191設置於所述基板192面對所述絕緣基板11的表面。可以理解，所述第三電極板191係可選擇的結構。 Further, the secondary electron emission material 18 has at least one electron emission surface 182 disposed facing the cathode emitter 16. The secondary electron-emitting material 18 The electron emission surface 182 can be a flat surface or a curved surface. The electron emission surface 182 may be formed with a concavo-convex structure that increases the surface area of the electron emission surface 182. The electron emission surface 182 may be disposed away from the insulating substrate 11. When the electron emission surface 182 is planar, the electron emission surface 182 forms an angle α with the first surface 112 of the insulating substrate 11, the angle α being greater than 0 degrees and less than or equal to 90 degrees. That is, the extension line of the cathode emitter 16 forms an angle a with the electron emission surface 182 which is greater than 0 degrees and less than or equal to 90 degrees. In this embodiment, the electron emission surface 182 is perpendicular to the first surface 112 of the insulating substrate 11 and disposed facing the cathode emitter 16. The field emission cathode device 10 may further include a third electrode plate 19 spaced apart from the insulating substrate 11. The third electrode plate 19 includes a substrate 192 and a third electrode 191 disposed on a surface of the substrate 192 facing the insulating substrate 11. It can be understood that the third electrode plate 191 is an optional structure.
所述場發射陰極裝置10在應用時，所述第一電極12與所述第二電極14可分別用作陰極電極與柵極電極，施加一電壓在第一電極12和第二電極14之間，以在第一電極12和第二電極14之間形成一電場。在第一電極12和第二電極14的電場作用下，陰極發射體16發射出初級電子。所述電場的電力線為由第一電極12指向第二電極14。陰極發射體16與次級電子發射材料18間隔且相對設置，且所述次級電子發射材料18位於所述陰極發射體16和第二電極14之間，因此，次級電子發射材料18位於第一電極12和所述第二電極14的電力線上，進而初級電子會在電場作用下飛向次級電子發射材料18且轟擊在次級電子發射材料18上。次級電子發射材料18在初級電子的轟擊下發射出次級電子。由於次級電子發射材料18的電流放大性能，其可以在初級電子的轟擊下發射出遠大於初級電子 數量的次級電子，從而將初級電子的電流進行了一次放大。所述第三電極191可用作陽極電極，在應用中，可於第三電極191上施加一電壓，次級電子發射材料18發射出的電子在第三電極191的電壓吸引下飛向第三電極191，通過第三電極191可以控制次級電子發射材料18發射出的次級電子的運動方向。 When the field emission cathode device 10 is applied, the first electrode 12 and the second electrode 14 can be used as a cathode electrode and a gate electrode, respectively, and a voltage is applied between the first electrode 12 and the second electrode 14. To form an electric field between the first electrode 12 and the second electrode 14. Under the electric field of the first electrode 12 and the second electrode 14, the cathode emitter 16 emits primary electrons. The electric power line of the electric field is directed from the first electrode 12 to the second electrode 14. The cathode emitter 16 is spaced apart from and opposite to the secondary electron-emitting material 18, and the secondary electron-emitting material 18 is located between the cathode emitter 16 and the second electrode 14, and thus, the secondary electron-emitting material 18 is located at The electric power lines of an electrode 12 and the second electrode 14, and thus the primary electrons, fly toward the secondary electron-emitting material 18 under the action of an electric field and are bombarded on the secondary electron-emitting material 18. The secondary electron-emitting material 18 emits secondary electrons under the bombardment of primary electrons. Due to the current amplification performance of the secondary electron-emitting material 18, it can be emitted much larger than the primary electrons under the bombardment of primary electrons. A quantity of secondary electrons that amplifies the current of the primary electrons once. The third electrode 191 can be used as an anode electrode. In the application, a voltage can be applied to the third electrode 191, and electrons emitted from the secondary electron emission material 18 fly to the third position under the voltage attraction of the third electrode 191. The electrode 191 can control the moving direction of the secondary electrons emitted from the secondary electron-emitting material 18 through the third electrode 191.
請參閱圖3，本發明第二實施例提供一種場發射陰極裝置20，所述場發射陰極裝置20包括：一絕緣基板21及設置於絕緣基板21上的一第一電極22、一第二電極24、至少一陰極發射體26及一次級電子發射材料28。所述第一電極22、一第二電極24、至少一陰極發射體26及一次級電子發射材料28組成一場發射單元。第二實施例提供的場發射陰極裝置20的結構與第一實施例的場發射陰極裝置10相似，其區別在於：所述次級電子發射材料28獨立設置在所述絕緣基底21表面並與所述第二電極24間隔設置。所述次級電子發射材料28具有的電子發射表面282為一面對所述陰極發射體26且背向所述絕緣基底21的斜面，該電子發射表面282與所述陰極發射體26的延長線相交且形成一角度α為45度。沿遠離所述陰極發射體26的方向，所述次級電子發射材料28的電子發射表面282的高度逐漸增加。 Referring to FIG. 3, a second embodiment of the present invention provides a field emission cathode device 20. The field emission cathode device 20 includes an insulating substrate 21, a first electrode 22 and a second electrode disposed on the insulating substrate 21. 24. At least one cathode emitter 26 and primary electron emissive material 28. The first electrode 22, a second electrode 24, at least one cathode emitter 26, and a primary electron emissive material 28 constitute a field emission unit. The structure of the field emission cathode device 20 provided by the second embodiment is similar to that of the field emission cathode device 10 of the first embodiment, except that the secondary electron emission material 28 is independently disposed on the surface of the insulating substrate 21 and The second electrodes 24 are spaced apart. The secondary electron-emitting material 28 has an electron-emitting surface 282 which is a slope facing the cathode emitter 26 and facing away from the insulating substrate 21, and an extension line of the electron-emitting surface 282 and the cathode emitter 26. They intersect and form an angle α of 45 degrees. The height of the electron-emitting surface 282 of the secondary electron-emitting material 28 gradually increases in a direction away from the cathode emitter 26.
由於電子發射表面282與所述陰極發射體26的延長線形成一45度的夾角，因此，所述電子發射表面282與陰極發射體26相對的面積增大，即所述電子發射表面282的有效發射面積增加，由電子發射表面282發射出的電流也將增大。 Since the electron emission surface 282 forms an angle of 45 degrees with the extension line of the cathode emitter 26, the area of the electron emission surface 282 opposite to the cathode emitter 26 is increased, that is, the electron emission surface 282 is effective. As the emission area increases, the current emitted by the electron emission surface 282 will also increase.
請參閱圖4，本發明第三實施例提供一種場發射陰極裝置30，所述場發射陰極裝置30包括：一絕緣基板31及設置於絕緣基板31上 的一第一電極32、一第二電極34、至少一陰極發射體36及一次級電子發射材料38。所述第一電極32、一第二電極34、至少一陰極發射體36及一次級電子發射材料38組成一場發射單元。第三實施例提供的場發射陰極裝置30的結構與第一實施例的場發射陰極裝置10相似，其區別在於：所述次級電子發射材料38設置在所述第二電極34的與陰極發射體36相對的表面，所述次級電子發射材料38還同時設置於所述絕緣基板31的表面。且所述次級電子發射材料38具有的電子發射表面382為一階梯形狀表面。這種具有階梯形狀電子發射表面382的次級電子發射材料38的製備方法為：採用印刷圖案的大小遞減且複數次印刷的絲網印刷的方法製備。通過次級電子發射材料38的階梯形狀電子發射表面382，可進一步增大次級電子發射材料38的有效發射面積，進而增大了場發射陰極裝置30發射出的電流。 Referring to FIG. 4, a third embodiment of the present invention provides a field emission cathode device 30. The field emission cathode device 30 includes an insulating substrate 31 and is disposed on the insulating substrate 31. A first electrode 32, a second electrode 34, at least one cathode emitter 36 and a primary electron emissive material 38. The first electrode 32, a second electrode 34, at least one cathode emitter 36, and a primary electron emissive material 38 constitute a field emission unit. The structure of the field emission cathode device 30 provided by the third embodiment is similar to that of the field emission cathode device 10 of the first embodiment, except that the secondary electron emission material 38 is disposed at the cathode and the cathode of the second electrode 34. The opposite surface of the body 36, the secondary electron-emitting material 38 is also disposed on the surface of the insulating substrate 31 at the same time. And the secondary electron-emitting material 38 has an electron-emitting surface 382 which is a step-shaped surface. The secondary electron-emitting material 38 having the step-shaped electron-emitting surface 382 is prepared by a screen printing method in which the size of the printed pattern is decreased and a plurality of times of printing is performed. By the stepped-shaped electron-emitting surface 382 of the secondary electron-emitting material 38, the effective emission area of the secondary electron-emitting material 38 can be further increased, thereby increasing the current emitted by the field emission cathode device 30.
請參閱圖5，本發明第四實施例提供一種場發射陰極裝置40，所述場發射陰極裝置40包括：一絕緣基板41及設置於絕緣基板41上的一第一電極42、一第二電極44、至少一陰極發射體46及一次級電子發射材料48。所述第一電極42、一第二電極44、至少一陰極發射體46及一次級電子發射材料48組成一場發射單元。第三實施例提供的場發射陰極裝置40的結構與第一實施例的場發射陰極裝置10相似，其區別在於：所述次級電子發射材料48僅設置在所述第二電極44的表面，且包住第二電極44的暴露的表面，所述次級電子發射材料48至少部份位於所述第一電極42與第二電極44之間，且部份面對說述陰極發射體46。 Referring to FIG. 5, a fourth embodiment of the present invention provides a field emission cathode device 40. The field emission cathode device 40 includes an insulating substrate 41 and a first electrode 42 and a second electrode disposed on the insulating substrate 41. 44. At least one cathode emitter 46 and a primary electron emissive material 48. The first electrode 42, a second electrode 44, at least one cathode emitter 46, and primary electron emissive material 48 constitute a field emission unit. The structure of the field emission cathode device 40 provided by the third embodiment is similar to that of the field emission cathode device 10 of the first embodiment, except that the secondary electron emission material 48 is disposed only on the surface of the second electrode 44. And enclosing the exposed surface of the second electrode 44, the secondary electron emissive material 48 is at least partially located between the first electrode 42 and the second electrode 44, and partially faces the cathode emitter 46.
請參閱圖6，本發明第五實施例提供一種場發射陰極裝置50，所 述場發射陰極裝置50包括：一絕緣基板51及設置於絕緣基板51上的一第一電極52、一第二電極54、至少一陰極發射體56。所述第一電極52、一第二電極54、至少一陰極發射體56形成一場發射單元。第三實施例提供的場發射陰極裝置50的結構與第一實施例的場發射陰極裝置10基本相同，其區別在於：所述第二電極54為導電材料542與所述次級電子發射材料544複合形成一複合結構，具體地，所述次級電子發射材料544為複合結構的基體，所述導電材料542為複數導電材料顆粒分散在次級電子發射材料544中。或者，以所述導電材料542為複合結構的基體，所述次級電子發射材料58分散在所述導電材料542中。該複合結構既具備導電的性能又具備可以發射次級電子的性能。 Referring to FIG. 6, a fifth embodiment of the present invention provides a field emission cathode device 50. The field emission cathode device 50 includes an insulating substrate 51, a first electrode 52 disposed on the insulating substrate 51, a second electrode 54, and at least one cathode emitter 56. The first electrode 52, a second electrode 54, and at least one cathode emitter 56 form a field emission unit. The structure of the field emission cathode device 50 provided by the third embodiment is substantially the same as that of the field emission cathode device 10 of the first embodiment, except that the second electrode 54 is a conductive material 542 and the secondary electron emission material 544. The composite forms a composite structure. Specifically, the secondary electron-emitting material 544 is a matrix of a composite structure, and the conductive material 542 is a plurality of conductive material particles dispersed in the secondary electron-emitting material 544. Alternatively, the secondary electron-emitting material 58 is dispersed in the conductive material 542 with the conductive material 542 as a matrix of a composite structure. The composite structure has both electrical conductivity and the ability to emit secondary electrons.
請參閱圖7及圖8，本發明第六實施例提供一種場發射陰極裝置60，其包括一絕緣基底61，及設置在所述絕緣基底61上的複數場發射單元6100，該複數場發射單元6100呈陣列排列，每一場發射單元6100包括一第一電極62、一第二電極64、至少一陰極發射體66及一次級電子發射材料68。每一場發射單元6100的具體結構與第一實施例中場發射單元100相同。也可採用第二至第六實施例中的場發射單元。所述場發射陰極裝置60進一步包括：複數行電極引線612與複數列電極引線614。複數行電極引線612平行且等間隔設置於絕緣基底61上，複數列電極引線614平行且等間隔設置於絕緣基底61上，且所述複數行電極引線612與複數列電極引線614相互交叉設置，而且，在行電極引線612與列電極引線614交叉處設置有一介質絕緣層616，該介質絕緣層616將行電極引線612與列電極引線614電隔離，以防止短路。每二相鄰的行電極引線614與二相鄰的列電極引線612形成一網格610，且每一網格114 定位一場發射單元6100。 Referring to FIG. 7 and FIG. 8 , a sixth embodiment of the present invention provides a field emission cathode device 60 including an insulating substrate 61 and a plurality of field emission units 6100 disposed on the insulating substrate 61. The plurality of field emission units The 6100 is arranged in an array, and each field emission unit 6100 includes a first electrode 62, a second electrode 64, at least one cathode emitter 66, and a primary electron emissive material 68. The specific structure of each field emission unit 6100 is the same as that of the field emission unit 100 in the first embodiment. The field emission unit in the second to sixth embodiments can also be employed. The field emission cathode device 60 further includes a plurality of row electrode leads 612 and a plurality of column electrode leads 614. The plurality of row electrode leads 612 are disposed in parallel and equally spaced on the insulating substrate 61. The plurality of column electrode leads 614 are disposed in parallel and equally spaced on the insulating substrate 61, and the plurality of row electrode leads 612 and the plurality of column electrode leads 614 are disposed to cross each other. Moreover, a dielectric insulating layer 616 is disposed at the intersection of the row electrode lead 612 and the column electrode lead 614, and the dielectric insulating layer 616 electrically isolates the row electrode lead 612 from the column electrode lead 614 to prevent short circuit. Each two adjacent row electrode leads 614 and two adjacent column electrode leads 612 form a grid 610, and each grid 114 A launch unit 6100 is located.
所述複數場發射單元6100對應設置於上述網格610中，且每一網格610中設置一場發射單元6100。該陰極發射體66設置於第二電極64與第一電極62之間，且，陰極發射體66一端與第一電極62電連接，另一端指向第二電極64。該陰極發射體66平行於所述絕緣基底61的表面。該陰極發射體66可與絕緣基底61間隔設置或直接設置於絕緣基底61上。所述次級電子發射材料68與所述陰極發射體66相互間隔且相對設置。本實施例中，同一行的場發射單元6100中的第二電極64與同一行電極引線612電連接，同一列的場發射單元6100中的第一電極62與同一列電極引線614電連接。 The complex field emission unit 6100 is correspondingly disposed in the above-mentioned mesh 610, and a field emission unit 6100 is disposed in each of the grids 610. The cathode emitter 66 is disposed between the second electrode 64 and the first electrode 62, and one end of the cathode emitter 66 is electrically connected to the first electrode 62, and the other end is directed to the second electrode 64. The cathode emitter 66 is parallel to the surface of the insulating substrate 61. The cathode emitter 66 may be spaced apart from the insulating substrate 61 or disposed directly on the insulating substrate 61. The secondary electron emission material 68 and the cathode emitter 66 are spaced apart from each other and disposed opposite each other. In the present embodiment, the second electrode 64 in the field emission unit 6100 in the same row is electrically connected to the same row electrode lead 612, and the first electrode 62 in the field emission unit 6100 in the same row is electrically connected to the same column electrode lead 614.
所述的絕緣基底61為一絕緣基板，如陶瓷基板、玻璃基板、樹脂基板、石英基板等。所述絕緣基底61的大小與厚度不限，本領域技術人員可根據實際需要選擇。本實施例中，所述絕緣基底61優選為一玻璃基板，其厚度大於1毫米，邊長大於1厘米。 The insulating substrate 61 is an insulating substrate such as a ceramic substrate, a glass substrate, a resin substrate, a quartz substrate or the like. The size and thickness of the insulating substrate 61 are not limited, and those skilled in the art can select according to actual needs. In this embodiment, the insulating substrate 61 is preferably a glass substrate having a thickness greater than 1 mm and a side length greater than 1 cm.
所述行電極引線612與列電極引線614為導體，如金屬層等。本實施例中，該複數行電極引線612與複數列電極引線614優選為採用導電漿料印製的平面電極，且該複數行電極引線614的行間距為50微米~2厘米，複數列電極引線614的列間距為50微米~2厘米。該行電極引線612與列電極引線614的寬度為30微米~100微米，厚度為10微米~50微米。本實施例中，該行電極引線612與列電極引線614的交叉角度為10度到90度，優選為90度。本實施例中，可通過絲網印刷法將導電漿料印製於絕緣基底61上製備行電極引線612與列電極引線614。該導電漿料的成分包括金屬粉、低熔點玻璃粉和黏結劑。其中，該金屬粉優選為銀粉，該黏結劑優選為松 油醇或乙基纖維素。該導電漿料中，金屬粉的重量比為50%~90%，低熔點玻璃粉的重量比為2%~10%，黏結劑的重量比為8%~40%。 The row electrode lead 612 and the column electrode lead 614 are conductors such as a metal layer or the like. In this embodiment, the plurality of row electrode leads 612 and the plurality of column electrode leads 614 are preferably planar electrodes printed with a conductive paste, and the row spacing of the plurality of row electrode leads 614 is 50 micrometers to 2 centimeters, and the plurality of column electrode leads The column spacing of 614 is 50 microns to 2 cm. The row electrode lead 612 and the column electrode lead 614 have a width of 30 micrometers to 100 micrometers and a thickness of 10 micrometers to 50 micrometers. In this embodiment, the intersection angle of the row electrode lead 612 and the column electrode lead 614 is 10 degrees to 90 degrees, preferably 90 degrees. In this embodiment, the row electrode lead 612 and the column electrode lead 614 can be prepared by printing a conductive paste on the insulating substrate 61 by a screen printing method. The composition of the conductive paste includes metal powder, low melting point glass powder, and a binder. Wherein, the metal powder is preferably silver powder, and the binder is preferably loose. Oleyl alcohol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50% to 90%, the weight ratio of the low-melting glass powder is 2% to 10%, and the weight ratio of the binder is 8% to 40%.
所述第一電極62與第二電極64的材料為金屬等。本實施例中，該第一電極62與第二電極64均為平面導體，其尺寸依據網格610的尺寸決定。該第一電極62和第二電極64直接與上述電極引線連接，從而實現電連接。所述第一電極62與第二電極64的長度為20微米~1.5厘米，寬度為30微米~1厘米，厚度為10微米~500微米。優選地，所述第一電極62與第二電極64的長度為100微米~700微米，寬度為50微米~500微米，厚度為20微米~100微米。本實施例中，該第一電極62與第二電極64的材料為導電漿料，通過絲網印刷法印製於絕緣基底61上。該導電漿料的成分與上述電極引線所用的導電漿料的成分相同。 The material of the first electrode 62 and the second electrode 64 is metal or the like. In this embodiment, the first electrode 62 and the second electrode 64 are planar conductors, and the size thereof is determined according to the size of the grid 610. The first electrode 62 and the second electrode 64 are directly connected to the above-mentioned electrode lead, thereby achieving electrical connection. The first electrode 62 and the second electrode 64 have a length of 20 micrometers to 1.5 centimeters, a width of 30 micrometers to 1 centimeter, and a thickness of 10 micrometers to 500 micrometers. Preferably, the first electrode 62 and the second electrode 64 have a length of 100 micrometers to 700 micrometers, a width of 50 micrometers to 500 micrometers, and a thickness of 20 micrometers to 100 micrometers. In this embodiment, the material of the first electrode 62 and the second electrode 64 is a conductive paste, which is printed on the insulating substrate 61 by screen printing. The composition of the conductive paste is the same as that of the conductive paste used for the electrode lead described above.
所述陰極發射體66可為一陰極發射體66或複數陰極發射體66，所述陰極發射體16可為矽線、奈米碳管、碳纖維及奈米碳管線等中的一種或數種。而且，每一陰極發射體66包括一電子發射端662，該電子發射端662為陰極發射體66遠離第一電極62的一端。 The cathode emitter 66 can be a cathode emitter 66 or a plurality of cathode emitters 66. The cathode emitters 16 can be one or more of tantalum wires, carbon nanotubes, carbon fibers, and carbon nanotubes. Moreover, each cathode emitter 66 includes an electron emitting end 662 that is one end of the cathode emitter 66 remote from the first electrode 62.
本實施例中，陰極發射體66包括複數平行排列的奈米碳管線。採用複數平行排列的奈米碳管線作為陰極發射體66時，每一奈米碳管線的一端與第一電極62電連接，另一端指向第二電極64，作為陰極發射體66的電子發射端662。該電子發射端662與第二電極64之間的距離為1微米~1000微米。該陰極發射體66一端與第一電極62的電連接方式可為通過一導電膠電連接，亦可通過分子間力或者其他方式實現。該奈米碳管線的長度為10微米~1厘米，且相鄰的奈米碳管線之間的間距為1微米~1000微米。該奈米碳管線包括 複數沿奈米碳管長度方向排列的奈米碳管。具體地，該奈米碳管線包括複數奈米碳管片段，該複數奈米碳管片段通過凡得瓦力首尾相連，每一奈米碳管片段包括複數相互平行並通過凡得瓦力緊密結合的奈米碳管。所述奈米碳管線中的奈米碳管包括單壁、雙壁及多壁奈米碳管中的一種或數種。所述奈米碳管的長度範圍為10微米~100微米，且奈米碳管的直徑小於15奈米。 In this embodiment, the cathode emitter 66 includes a plurality of parallel aligned nanocarbon lines. When a plurality of parallel arranged nanocarbon lines are used as the cathode emitter 66, one end of each nanocarbon line is electrically connected to the first electrode 62, and the other end is directed to the second electrode 64 as the electron emission end 662 of the cathode emitter 66. . The distance between the electron emitting end 662 and the second electrode 64 is from 1 micrometer to 1000 micrometers. The electrical connection between one end of the cathode emitter 66 and the first electrode 62 may be electrically connected through a conductive paste, or may be achieved by intermolecular force or other means. The nano carbon pipeline has a length of 10 micrometers to 1 centimeter and a spacing between adjacent nanocarbon pipelines of 1 micrometer to 1000 micrometers. The nano carbon pipeline includes A plurality of carbon nanotubes arranged along the length of the carbon nanotubes. Specifically, the nanocarbon pipeline includes a plurality of carbon nanotube segments, and the plurality of carbon nanotube segments are connected end to end by van der Waals force, and each of the carbon nanotube segments includes a plurality of parallel and mutually tightly coupled by van der Waals force Carbon nanotubes. The carbon nanotubes in the nanocarbon pipeline include one or more of single-walled, double-walled, and multi-walled carbon nanotubes. The carbon nanotubes have a length ranging from 10 micrometers to 100 micrometers, and the carbon nanotubes have a diameter of less than 15 nanometers.
請參閱圖9，本發明第七實施例提供一種使用上述第六實施例場發射陰極裝置60的場發射顯示器70，該場發射顯示器70包括一陽極裝置710及與該陽極裝置710間隔設置的一場發射陰極裝置720。所述陽極裝置710與所述場發射陰極裝置720相對且保持一定距離設置。 Referring to FIG. 9, a seventh embodiment of the present invention provides a field emission display 70 using the field emission cathode device 60 of the sixth embodiment described above. The field emission display 70 includes an anode device 710 and a field spaced apart from the anode device 710. A cathode device 720 is emitted. The anode device 710 is disposed opposite the field emission cathode device 720 and maintained at a distance.
所述陽極裝置710包括一絕緣透明基底712，一透明陽極714及塗覆於透明陽極714上的螢光層716。所述透明陽極714可為氧化銦錫薄膜、氧化鋅薄膜、奈米碳管薄膜或者石墨烯薄膜。所述陽極裝置710通過一絕緣支撐體718與場發射陰極裝置720中的絕緣基底722的四周封接。所述場發射陰極裝置720中的次級電子發射材料78與陽極裝置710中的螢光層716相對設置。 The anode device 710 includes an insulative transparent substrate 712, a transparent anode 714, and a phosphor layer 716 coated on the transparent anode 714. The transparent anode 714 may be an indium tin oxide film, a zinc oxide film, a carbon nanotube film or a graphene film. The anode device 710 is sealed to the periphery of the insulating substrate 722 in the field emission cathode device 720 by an insulating support 718. The secondary electron emissive material 78 in the field emission cathode device 720 is disposed opposite the phosphor layer 716 in the anode device 710.
可選擇地，所述陽極裝置710還可以包括一絕緣透明基底，一設置於所述絕緣透明基底表面上的螢光粉層及一設置於所述螢光粉層上的鏡面電極層。該鏡面電極層的材料可為鋁。 Optionally, the anode device 710 may further include an insulating transparent substrate, a phosphor powder layer disposed on the surface of the insulating transparent substrate, and a mirror electrode layer disposed on the phosphor powder layer. The material of the mirror electrode layer may be aluminum.
所述場發射陰極裝置720為第六實施例中的場發射陰極裝置60。所述場發射陰極裝置720包括一絕緣基底722、複數行電極引線與複數列電極引線724，每二相鄰的行電極引線與二相鄰的列電極引線724形成一網格。複數場發射單元7300分別設置於所述網格 728的內部。每一網格728的內部均設置有一場發射單元7300。 The field emission cathode device 720 is the field emission cathode device 60 of the sixth embodiment. The field emission cathode device 720 includes an insulating substrate 722, a plurality of row electrode leads and a plurality of column electrode leads 724, and each two adjacent row electrode leads and two adjacent column electrode leads 724 form a grid. Complex field emission units 7300 are respectively disposed on the grid The interior of the 728. A field firing unit 7300 is disposed inside each of the grids 728.
場發射顯示器70在應用時，分別施加不同電壓給行電極引線、列電極引線724和陽極714。場發射單元7300在行電極引線和列電極引線724的電壓作用下發射出電子。由場發射單元7300發射出的電子在陽極714的電場作用下，最終打到陽極714上，打在塗覆透明陽極714上的螢光層716，發出螢光，實現場發射顯示器70的顯示功能。由於行電極引線之間相互絕緣、列電極引線724之間相互絕緣，因此，通過選擇性地在不同的行電極引線和列電極引線724之間施加不同的電壓，可控制不同位置的場發射單元7300發射電子，電子打在陽極裝置710的螢光層716的不同位置，從而使螢光層716的不同位置發光，使場發射顯示器70根據需要顯示不同的畫面。 Field emission display 70 applies different voltages to row electrode leads, column electrode leads 724, and anode 714, respectively, when applied. The field emission unit 7300 emits electrons under the action of the voltages of the row electrode lead and the column electrode lead 724. The electrons emitted by the field emission unit 7300 are finally applied to the anode 714 under the electric field of the anode 714, and the fluorescent layer 716 coated on the transparent anode 714 is emitted to emit fluorescence to realize the display function of the field emission display 70. . Since the row electrode leads are insulated from each other and the column electrode leads 724 are insulated from each other, the field emission unit at different positions can be controlled by selectively applying different voltages between different row electrode leads and column electrode leads 724. The 7300 emits electrons that are placed at different locations on the phosphor layer 716 of the anode device 710 to illuminate different locations of the phosphor layer 716, causing the field emission display 70 to display different images as desired.
本發明提供的場發射陰極裝置及場發射顯示器具有以下優點：其一，通過次級電子發射材料的電流放大性能，該場發射陰極裝置在較小的工作電壓下就可以獲得較大的場發射電流，採用該場發射陰極裝置的場發射顯示器也可以獲得較大的電流；其二，所述陰極發射體與所述次級電子發射材料相對設置，且所述次級電子發射材料設置於所述第一電極和第二電極之間，因此，陰極發射體發射出的電子極易在第一電極和第二電極的電場作用下轟擊所述次級電子發射材料，從而增大了所述場發射陰極裝置的發射電流，進而增大了採用該場發射陰極裝置的場發射顯示器的電流；其三，通過次級電子發射材料的電流放大性能，可減小施加於所述第一電極和第二電極上的電壓，從而使整個場發射陰極裝置的壽命增長，進而使採用該種場發射陰極裝置的場發射顯示器的壽 命也增長。 The field emission cathode device and the field emission display provided by the invention have the following advantages: First, by the current amplification performance of the secondary electron emission material, the field emission cathode device can obtain a large field emission at a small operating voltage. a current, a field emission display using the field emission cathode device can also obtain a larger current; second, the cathode emitter is disposed opposite to the secondary electron emission material, and the secondary electron emission material is disposed at the Between the first electrode and the second electrode, therefore, electrons emitted from the cathode emitter easily bombard the secondary electron-emitting material under the electric field of the first electrode and the second electrode, thereby increasing the field Transmitting the emission current of the cathode device, thereby increasing the current of the field emission display using the field emission cathode device; third, by applying the current amplification performance of the secondary electron emission material, the application to the first electrode and the The voltage across the two electrodes, thereby increasing the lifetime of the entire field emission cathode device, thereby enabling field emission display using the field emission cathode device Of life Life also grows.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
10‧‧‧場發射陰極裝置 10‧‧‧ Field emission cathode device
11‧‧‧絕緣基板 11‧‧‧Insert substrate
12‧‧‧第一電極 12‧‧‧First electrode
14‧‧‧第二電極 14‧‧‧second electrode
16‧‧‧陰極發射體 16‧‧‧ cathode emitter
18‧‧‧次級電子發射材料 18‧‧‧Secondary electron emission materials
19‧‧‧第三電極板 19‧‧‧ third electrode plate
100‧‧‧場發射單元 100‧‧‧ Field Launch Unit
112‧‧‧絕緣基板的第一表面 112‧‧‧The first surface of the insulating substrate
162‧‧‧電子發射端 162‧‧‧Electronic transmitter
182‧‧‧電子發射表面 182‧‧‧Electronic emission surface
191‧‧‧第三電極 191‧‧‧ third electrode
192‧‧‧基板 192‧‧‧Substrate
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100100763A TWI427662B (en) | 2011-01-10 | 2011-01-10 | Field emission cathod device and field emission display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100100763A TWI427662B (en) | 2011-01-10 | 2011-01-10 | Field emission cathod device and field emission display |
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| Publication Number | Publication Date |
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| TW201230123A TW201230123A (en) | 2012-07-16 |
| TWI427662B true TWI427662B (en) | 2014-02-21 |
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| TW100100763A TWI427662B (en) | 2011-01-10 | 2011-01-10 | Field emission cathod device and field emission display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103903938B (en) * | 2012-12-29 | 2016-08-10 | 清华大学 | Field emission cathode device and driving method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187112B2 (en) * | 2000-11-17 | 2007-03-06 | Kabushiki Kaisha Toshiba | Field emission cold cathode device of lateral type |
| US20090236965A1 (en) * | 2008-03-19 | 2009-09-24 | Tsinghua University | Field emission display |
| TW201005785A (en) * | 2008-07-25 | 2010-02-01 | Hon Hai Prec Ind Co Ltd | Electron emission device |
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2011
- 2011-01-10 TW TW100100763A patent/TWI427662B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187112B2 (en) * | 2000-11-17 | 2007-03-06 | Kabushiki Kaisha Toshiba | Field emission cold cathode device of lateral type |
| US20090236965A1 (en) * | 2008-03-19 | 2009-09-24 | Tsinghua University | Field emission display |
| TW201005785A (en) * | 2008-07-25 | 2010-02-01 | Hon Hai Prec Ind Co Ltd | Electron emission device |
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| TW201230123A (en) | 2012-07-16 |
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