TWI416758B - Structure of light emitting diode and method of fabricaiting the same - Google Patents
Structure of light emitting diode and method of fabricaiting the same Download PDFInfo
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本發明是有關於一種發光二極體結構及其製作方法，且特別是有關於一種側壁上覆蓋有絕緣層的發光二極體結構及其製作方法。The invention relates to a light-emitting diode structure and a manufacturing method thereof, and in particular to a light-emitting diode structure covered with an insulating layer on a sidewall and a manufacturing method thereof.
發光二極體的封裝製程一般是包括磊晶、加工切割成多個發光二極體晶片、固晶、打線接合等製程。然而，在切割的過程中，容易在這些發光二極體晶片的側壁上產生缺陷。一旦發光二極體晶片的側壁具有缺陷，則易有漏電流的問題產生，以致於發光二極體晶片在電性上的穩定性不佳。此外，發光二極體晶片的側壁裸露於外界環境中，容易受到外界環境或是後續製程的污染或是損壞，以致於製程良率降低。The packaging process of the light-emitting diode generally includes a process of epitaxy, processing and cutting into a plurality of light-emitting diode wafers, solid crystal bonding, wire bonding, and the like. However, during the cutting process, defects are easily generated on the sidewalls of these light-emitting diode wafers. Once the sidewall of the light-emitting diode wafer has a defect, there is a problem that leakage current is liable to occur, so that the stability of the light-emitting diode wafer is poor in electrical properties. In addition, the sidewall of the LED chip is exposed to the external environment, and is easily contaminated or damaged by the external environment or subsequent processes, so that the process yield is reduced.
此外，在固晶的過程中，用以固定發光二極體晶片的銀膠容易因為膠量控制不當而溢流至發光二極體晶片的側壁，以致於發光二極體晶片的p型摻雜半導體層與n型摻雜半導體層之間電性短路。前述之電性短路會造成發光二極體晶片的亮度衰減、逆偏電流增加、製程良率降低以及製作成本提高等缺點。In addition, in the process of solid crystal, the silver paste used to fix the LED chip is easily overflowed to the sidewall of the LED chip due to improper control of the amount of glue, so that the p-type doping of the LED chip is performed. An electrical short between the semiconductor layer and the n-type doped semiconductor layer. The aforementioned electrical short circuit causes disadvantages such as luminance degradation of the LED chip, increase in reverse bias current, reduction in process yield, and improvement in manufacturing cost.
本發明提出一種發光二極體結構，可避免溢流至發光二極體晶片的側壁上的銀膠使p型摻雜半導體層與n型摻雜半導體層之間電性短路。The invention provides a light emitting diode structure, which can avoid silver paste which overflows to the sidewall of the light emitting diode wafer, so as to electrically short the p-type doped semiconductor layer and the n-type doped semiconductor layer.
本發明另提出一種發光二極體結構的製作方法，其製程良率較高且製作成本較低。The invention further provides a method for fabricating a light-emitting diode structure, which has high process yield and low manufacturing cost.
本發明提出一種發光二極體結構的製作方法如下所述。首先，提供一發光二極體晶片與一承載基板。發光二極體晶片配置於承載基板上，發光二極體晶片具有朝向承載基板的一底面、相對於底面的至少一頂面以及與頂面相連的至少一側壁，且發光二極體晶片具有配置於頂面上的至少一電極。然後，於承載基板上形成一連續性抗氧化材料層。接著，移除部份連續性抗氧化材料層，以於發光二極體晶片的頂面上及部分承載基板上形成一抗氧化層，以覆蓋配置於頂面上的電極，並暴露出側壁。然後，施行一氧化法，以於發光二極體晶片的側壁上形成一絕緣層。之後，移除抗氧化層。The invention provides a method for fabricating a light-emitting diode structure as follows. First, a light emitting diode chip and a carrier substrate are provided. The light emitting diode chip is disposed on the carrier substrate, and the light emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one sidewall connected to the top surface, and the LED array has a configuration At least one electrode on the top surface. Then, a continuous layer of antioxidant material is formed on the carrier substrate. Then, a portion of the continuous oxidation resistant material layer is removed to form an anti-oxidation layer on the top surface of the LED substrate and on a portion of the carrier substrate to cover the electrodes disposed on the top surface and expose the sidewalls. Then, an oxidation method is performed to form an insulating layer on the sidewall of the light-emitting diode wafer. After that, the antioxidant layer is removed.
在本發明之一實施例中，氧化法為乾式氧化法或濕式氧化法。In one embodiment of the invention, the oxidation process is a dry oxidation process or a wet oxidation process.
在本發明之一實施例中，發光二極體晶片包括一第一型摻雜半導體層、一第二型摻雜半導體層以及一發光層，其中發光層位於第一型摻雜半導體層與第二型摻雜半導體層之間。In an embodiment of the invention, the LED array includes a first type doped semiconductor layer, a second type doped semiconductor layer, and a light emitting layer, wherein the light emitting layer is located on the first type doped semiconductor layer and The two types are doped between the semiconductor layers.
在本發明之一實施例中，絕緣層的材質包括第一型摻雜半導體層的氧化物、發光層的氧化物以及第二型摻雜半導體層的氧化物。In an embodiment of the invention, the material of the insulating layer comprises an oxide of the first type doped semiconductor layer, an oxide of the light emitting layer, and an oxide of the second type doped semiconductor layer.
在本發明之一實施例中，絕緣層的材質包括含鎵的氧化物以及含氮的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a gallium-containing oxide and a nitrogen-containing oxide.
在本發明之一實施例中，絕緣層的材質包括含鎵的氧化物以及含磷的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a gallium-containing oxide and a phosphorus-containing oxide.
本發明提出一種發光二極體結構的製作方法如下所述。首先，提供一發光二極體晶片與一承載基板。發光二極體晶片配置於承載基板上，發光二極體晶片具有朝向承載基板的一底面、相對於底面的至少一頂面以及與頂面相連的至少一側壁，且發光二極體晶片具有配置於頂面上的至少一電極。接著，於承載基板上形成一連續性覆蓋材料層。然後，移除部份連續性覆蓋材料層，以於頂面上及部分承載基板上形成一覆蓋層，以覆蓋電極。接著，於承載基板上形成一連續性絕緣材料層，並覆蓋發光二極體晶片。之後，移除覆蓋層以及連續性絕緣材料層之位於覆蓋層上的部分，以於發光二極體晶片的側壁上形成一絕緣層。The invention provides a method for fabricating a light-emitting diode structure as follows. First, a light emitting diode chip and a carrier substrate are provided. The light emitting diode chip is disposed on the carrier substrate, and the light emitting diode chip has a bottom surface facing the carrier substrate, at least one top surface opposite to the bottom surface, and at least one sidewall connected to the top surface, and the LED array has a configuration At least one electrode on the top surface. Next, a continuous cover material layer is formed on the carrier substrate. Then, a portion of the continuous cover material layer is removed to form a cover layer on the top surface and a portion of the carrier substrate to cover the electrodes. Next, a continuous insulating material layer is formed on the carrier substrate and covers the LED substrate. Thereafter, the cover layer and the portion of the continuous insulating material layer on the cover layer are removed to form an insulating layer on the sidewall of the light-emitting diode wafer.
在本發明之一實施例中，形成連續性絕緣材料層的方法包括物理氣相沉積、化學氣相沉積、濺鍍或電子束成長。In one embodiment of the invention, a method of forming a continuous layer of insulating material includes physical vapor deposition, chemical vapor deposition, sputtering, or electron beam growth.
在本發明之一實施例中，絕緣層的材質包括含矽的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a cerium-containing oxide.
在本發明之一實施例中，發光二極體晶片包括一第一型摻雜半導體層、一第二型摻雜半導體層以及一發光層，其中發光層位於第一型摻雜半導體層與第二型摻雜半導體層之間。In an embodiment of the invention, the LED array includes a first type doped semiconductor layer, a second type doped semiconductor layer, and a light emitting layer, wherein the light emitting layer is located on the first type doped semiconductor layer and The two types are doped between the semiconductor layers.
本發明提出一種發光二極體結構的製作方法如下所述。首先，提供一發光二極體晶片與一承載基板。發光二極體晶片配置於承載基板上，發光二極體晶片具有朝向承 載基板的一底面、相對於底面的至少一頂面以及與頂面相連的至少一側壁，且發光二極體晶片具有配置於頂面上的至少一電極。接著，承載基板上形成一連續性絕緣材料層，以覆蓋發光二極體晶片。然後，於側壁上形成一保護層，且連續性絕緣材料層位於保護層與側壁之間。之後，移除連續性絕緣材料層之未被保護層所覆蓋的部分，以於發光二極體晶片的側壁上形成一絕緣層。然後，移除保護層。The invention provides a method for fabricating a light-emitting diode structure as follows. First, a light emitting diode chip and a carrier substrate are provided. The light emitting diode chip is disposed on the carrier substrate, and the light emitting diode chip has a bearing toward the bearing a bottom surface of the carrier substrate, at least one top surface opposite to the bottom surface, and at least one sidewall connected to the top surface, and the light emitting diode wafer has at least one electrode disposed on the top surface. Next, a layer of continuous insulating material is formed on the carrier substrate to cover the LED substrate. A protective layer is then formed on the sidewalls and a layer of continuous insulating material is between the protective layer and the sidewalls. Thereafter, the portion of the continuous insulating material layer covered by the unprotected layer is removed to form an insulating layer on the sidewall of the light emitting diode wafer. Then, remove the protective layer.
在本發明之一實施例中，形成連續性絕緣材料層的方法包括旋轉塗佈。In one embodiment of the invention, a method of forming a layer of continuous insulating material includes spin coating.
在本發明之一實施例中，連續性絕緣材料層的材質包括氧化物溶膠。In an embodiment of the invention, the material of the layer of continuous insulating material comprises an oxide sol.
在本發明之一實施例中，氧化物溶膠包括含有二氧化矽的溶膠。In an embodiment of the invention, the oxide sol comprises a sol comprising cerium oxide.
在本發明之一實施例中，發光二極體晶片包括一第一型摻雜半導體層、一第二型摻雜半導體層以及一發光層，其中發光層位於第一型摻雜半導體層與第二型摻雜半導體層之間。In an embodiment of the invention, the LED array includes a first type doped semiconductor layer, a second type doped semiconductor layer, and a light emitting layer, wherein the light emitting layer is located on the first type doped semiconductor layer and The two types are doped between the semiconductor layers.
本發明提出一種發光二極體結構包括一發光二極體晶片以及一絕緣層。發光二極體晶片具有一底面、相對於底面的至少一頂面以及與頂面相連的至少一側壁，且發光二極體晶片具有配置於頂面上的一電極。絕緣層配置於側壁上，並暴露出電極。The invention provides a light emitting diode structure comprising a light emitting diode chip and an insulating layer. The light emitting diode chip has a bottom surface, at least one top surface opposite to the bottom surface, and at least one side wall connected to the top surface, and the light emitting diode wafer has an electrode disposed on the top surface. The insulating layer is disposed on the sidewall and exposes the electrode.
在本發明之一實施例中，絕緣層暴露出頂面。In an embodiment of the invention, the insulating layer exposes the top surface.
在本發明之一實施例中，發光二極體晶片包括一第一 型摻雜半導體層、一第二型摻雜半導體層以及一發光層，其中發光層位於第一型摻雜半導體層與第二型摻雜半導體層之間。In an embodiment of the invention, the LED chip includes a first The doped semiconductor layer, a second type doped semiconductor layer and a light emitting layer, wherein the light emitting layer is between the first type doped semiconductor layer and the second type doped semiconductor layer.
在本發明之一實施例中，絕緣層的材質包括第一型摻雜半導體層的氧化物、發光層的氧化物以及第二型摻雜半導體層的氧化物。In an embodiment of the invention, the material of the insulating layer comprises an oxide of the first type doped semiconductor layer, an oxide of the light emitting layer, and an oxide of the second type doped semiconductor layer.
在本發明之一實施例中，絕緣層的材質包括含鎵的氧化物以及含氮的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a gallium-containing oxide and a nitrogen-containing oxide.
在本發明之一實施例中，絕緣層的材質包括含鎵的氧化物以及含磷的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a gallium-containing oxide and a phosphorus-containing oxide.
在本發明之一實施例中，絕緣層包括物理氣相沉積層、化學氣相沉積層、濺鍍層或電子束成長層。In an embodiment of the invention, the insulating layer comprises a physical vapor deposited layer, a chemical vapor deposited layer, a sputtered layer or an electron beam grown layer.
在本發明之一實施例中，絕緣層的材質包括含矽的氧化物。In an embodiment of the invention, the material of the insulating layer comprises a cerium-containing oxide.
在本發明之一實施例中，絕緣層的材質包括二氧化矽。In an embodiment of the invention, the material of the insulating layer comprises cerium oxide.
在本發明之一實施例中，絕緣層的材質包括硫及其化合物。In an embodiment of the invention, the material of the insulating layer comprises sulfur and a compound thereof.
綜上所述，本發明是在發光二極體晶片的側壁上形成一絕緣層，以避免習知技術中因銀膠溢流至側壁而導致p型摻雜半導體層與n型摻雜半導體層之間電性短路的問題。如此一來，絕緣層可提升製程良率並降低製作成本。In summary, the present invention forms an insulating layer on the sidewall of the LED chip to avoid the p-doped semiconductor layer and the n-doped semiconductor layer caused by the overflow of the silver paste to the sidewall in the prior art. The problem of electrical short between. In this way, the insulating layer can improve the process yield and reduce the manufacturing cost.
為讓本發明之上述和其他特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式，作詳細說明如下。The above and other features and advantages of the present invention will become more apparent from the description of the appended claims.
圖1A~圖1D繪示本發明一實施例之發光二極體結構的製作方法的剖面圖。1A-1D are cross-sectional views showing a method of fabricating a light emitting diode structure according to an embodiment of the present invention.
首先，請參照圖1A，提供一發光二極體晶片100與一承載基板200，發光二極體晶片100配置於承載基板200上。承載基板100例如是藍膜(blue tape)或是紫外線膠帶(UV tape)。First, referring to FIG. 1A, a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200. The carrier substrate 100 is, for example, a blue tape or a UV tape.
發光二極體晶片100具有朝向承載基板200的一底面B、相對於底面B的二頂面U1、U2以及與頂面U1、U2相連的多個側壁S，且發光二極體晶片100具有配置於頂面U1、U2上的多個電極E1、E2。The LED wafer 100 has a bottom surface B facing the carrier substrate 200, two top surfaces U1 and U2 opposite to the bottom surface B, and a plurality of sidewalls S connected to the top surfaces U1 and U2, and the LED array 100 has a configuration. A plurality of electrodes E1, E2 on the top surfaces U1, U2.
在本實施例中，發光二極體晶片100可包括一第一型摻雜半導體層112、一第二型摻雜半導體層114以及位於第一型摻雜半導體層112與第二型摻雜半導體層114之間的一發光層116。此外，發光二極體晶片100還可包括一磊晶層120，磊晶層120位於發光二極體晶片100與承載基板200之間。In this embodiment, the LED array 100 can include a first type doped semiconductor layer 112, a second type doped semiconductor layer 114, and a first type doped semiconductor layer 112 and a second type doped semiconductor. A light emitting layer 116 between the layers 114. In addition, the LED wafer 100 may further include an epitaxial layer 120 between the LED substrate 100 and the carrier substrate 200.
接著，請再次參照圖1A，在本實施例中，於發光二極體晶片100上全面形成一連續性抗氧化材料層A1，其材質例如是光阻等感光材料。然後，請參照圖1B，在本實施例中，可以曝光顯影法移除位於側壁S上的連續性抗氧化材料層A1，以於發光二極體晶片100的頂面U1、U2以及部份承載基板200上形成一抗氧化層A。抗氧化層A覆蓋配置於頂面U1、U2上的電極E1、E2，並暴露出側壁S。Next, referring again to FIG. 1A, in the present embodiment, a continuous oxidation resistant material layer A1 is formed on the LED array 100, and the material thereof is, for example, a photosensitive material such as a photoresist. Then, referring to FIG. 1B, in the embodiment, the continuous anti-oxidation material layer A1 on the sidewall S can be removed by exposure development to cover the top surfaces U1, U2 and partial carriers of the LED wafer 100. An oxidation resistant layer A is formed on the substrate 200. The oxidation resistant layer A covers the electrodes E1, E2 disposed on the top surfaces U1, U2 and exposes the side walls S.
之後，請參照圖1C，施行一氧化法，以於發光二極體晶片100的側壁S上形成一絕緣層I，氧化法例如是乾式氧化法(dry oxidation)或濕式氧化法(wet oxidation)。施行濕式氧化法的方式例如是將發光二極體晶片100暴露在含有水氣的環境中，而施行乾式氧化法的方式例如是將發光二極體晶片100暴露在含有氧氣的環境中。此外，在本實施例中，由於磊晶層120也可被氧化，因此，在磊晶層120的側壁122上亦會形成絕緣層I。Thereafter, referring to FIG. 1C, an oxidation method is performed to form an insulating layer I on the sidewall S of the LED wafer 100. The oxidation method is, for example, dry oxidation or wet oxidation. . The method of performing the wet oxidation method is, for example, exposing the light-emitting diode wafer 100 to an environment containing moisture, and the dry oxidation method is performed, for example, by exposing the light-emitting diode wafer 100 to an environment containing oxygen. In addition, in the present embodiment, since the epitaxial layer 120 can also be oxidized, the insulating layer I is also formed on the sidewall 122 of the epitaxial layer 120.
絕緣層I的材質可包括第一型摻雜半導體層112的氧化物、發光層116的氧化物、第二型摻雜半導體層114的氧化物以及磊晶層120的氧化物。在本實施例中，絕緣層I的材質包括含鎵的氧化物以及含氮的氧化物。在其他施例中，絕緣層I的材質包括含鎵的氧化物以及含磷的氧化物。The material of the insulating layer I may include an oxide of the first type doped semiconductor layer 112, an oxide of the light emitting layer 116, an oxide of the second type doped semiconductor layer 114, and an oxide of the epitaxial layer 120. In this embodiment, the material of the insulating layer I includes a gallium-containing oxide and a nitrogen-containing oxide. In other embodiments, the material of the insulating layer I includes a gallium-containing oxide and a phosphorus-containing oxide.
值得注意的是，本實施例於發光二極體晶片100的側壁S上形成絕緣層I，而絕緣層I可填補側壁S上的缺陷並使側壁S鈍化。如此一來，絕緣層I可降低漏電流產生的機率，並提升發光二極體晶片100在電性上的穩定性。此外，絕緣層I覆蓋側壁S可保護側壁S免於受到外界環境或是後續製程的污染或是損壞，進而提升製程良率。It should be noted that the present embodiment forms the insulating layer I on the sidewall S of the LED wafer 100, and the insulating layer I can fill the defects on the sidewall S and passivate the sidewall S. In this way, the insulating layer I can reduce the probability of leakage current generation and improve the electrical stability of the LED wafer 100. In addition, the insulating layer I covers the side wall S to protect the side wall S from being contaminated or damaged by the external environment or subsequent processes, thereby improving the process yield.
再者，在後續的固晶過程中，由於絕緣層I覆蓋發光二極體晶片100的側壁S，故可避免習知技術中因銀膠溢流至側壁而導致p型摻雜半導體層與n型摻雜半導體層之間電性短路的問題。如此一來，於側壁S上形成絕緣層I 可提升製程良率並降低製作成本。Moreover, in the subsequent die bonding process, since the insulating layer I covers the sidewall S of the LED substrate 100, the p-doped semiconductor layer and the n-type doped by the silver paste may be avoided in the prior art. A problem of electrical short between the doped semiconductor layers. In this way, the insulating layer I is formed on the sidewall S Improve process yield and reduce production costs.
之後，請參照圖1D，移除抗氧化層A，以暴露出電極E1、E2。在本實施例中，當抗氧化層A為感光材料時，移除抗氧化層A的方法可以是曝光顯影。Thereafter, referring to FIG. 1D, the oxidation resistant layer A is removed to expose the electrodes E1, E2. In the present embodiment, when the oxidation resistant layer A is a photosensitive material, the method of removing the oxidation resistant layer A may be exposure development.
圖2A~圖2D繪示本發明另一實施例之發光二極體結構的製作方法的剖面圖。2A-2D are cross-sectional views showing a method of fabricating a light emitting diode structure according to another embodiment of the present invention.
首先，請參照圖2A，提供一發光二極體晶片100與一承載基板200，發光二極體晶片100配置於承載基板200上。First, referring to FIG. 2A, a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200.
接著，請再次參照圖2A，在本實施例中，可於發光二極體晶片100上全面形成一連續性覆蓋材料層C1。然後，請參照圖2B，可藉由曝光顯影法移除位於側壁S上的連續性覆蓋材料層C1之，以暴露出側壁S，並於頂面U1、U2上殘留剩餘的覆蓋層C，覆蓋層C覆蓋電極E1、E2。Next, referring again to FIG. 2A, in the embodiment, a continuous covering material layer C1 can be formed on the LED array 100. Then, referring to FIG. 2B, the continuous cover material layer C1 on the sidewall S can be removed by exposure development to expose the sidewall S, and the remaining cover layer C remains on the top surfaces U1, U2, covering Layer C covers electrodes E1, E2.
然後，請參照圖2C，於承載基板200上形成一連續性絕緣材料層I1，並覆蓋發光二極體晶片100。形成連續性絕緣材料層I1的方法例如是物理氣相沉積、化學氣相沉積、濺鍍、電子束成長，或者是其他適合的方法。之後，請參照圖2D，移除覆蓋層C以及位於覆蓋層C上的連續性絕緣材料層I1，以於發光二極體晶片100的側壁S上形成一絕緣層I，並暴露出電極E1、E2。絕緣層I的材質例如為含矽的氧化物(如二氧化矽)。Then, referring to FIG. 2C, a continuous insulating material layer I1 is formed on the carrier substrate 200 and covers the LED array 100. The method of forming the continuous insulating material layer I1 is, for example, physical vapor deposition, chemical vapor deposition, sputtering, electron beam growth, or other suitable methods. Then, referring to FIG. 2D, the cover layer C and the continuous insulating material layer I1 on the cover layer C are removed to form an insulating layer I on the sidewall S of the LED array 100, and the electrode E1 is exposed. E2. The material of the insulating layer I is, for example, a cerium-containing oxide such as cerium oxide.
圖3A~圖3C繪示本發明又一實施例之發光二極體結構的製作方法的剖面圖。3A-3C are cross-sectional views showing a method of fabricating a light emitting diode structure according to still another embodiment of the present invention.
首先，請參照圖3A，提供一發光二極體晶片100與一承載基板200，發光二極體晶片100配置於承載基板200上。接著，在承載基板200上形成一連續性絕緣材料層I1，並覆蓋發光二極體晶片100，而形成連續性絕緣材料層I1的方法例如是旋轉塗佈或是其他適合的塗佈方式。在本實施例中，連續性絕緣材料層I1的材質例如是氧化物溶膠，氧化物溶膠包括含有二氧化矽的溶膠、或者是含有其他適合的氧化物的溶膠。First, referring to FIG. 3A, a light emitting diode chip 100 and a carrier substrate 200 are provided, and the light emitting diode chip 100 is disposed on the carrier substrate 200. Next, a continuous insulating material layer I1 is formed on the carrier substrate 200 and covers the light emitting diode wafer 100. The method of forming the continuous insulating material layer I1 is, for example, spin coating or other suitable coating method. In the present embodiment, the material of the continuous insulating material layer I1 is, for example, an oxide sol, and the oxide sol includes a sol containing cerium oxide or a sol containing another suitable oxide.
然後，請參照圖3B，於側壁上形成一保護層310，且連續性絕緣材料層I1位於保護層310與側壁S之間。在本實施例中，形成保護層310的方法可以是先在發光二極體晶片100上全面形成一保護材料層(未繪示)，然後，以曝光顯影法移除位於頂面U1、U2上的保護材料層。Then, referring to FIG. 3B, a protective layer 310 is formed on the sidewall, and the continuous insulating material layer I1 is located between the protective layer 310 and the sidewall S. In this embodiment, the protective layer 310 may be formed by first forming a protective material layer (not shown) on the LED substrate 100, and then removing the top surface U1 and U2 by exposure and development. Layer of protective material.
之後，請參照圖3C，移除晶片100頂面上未被保護層310所覆蓋的連續性絕緣材料層I1以及側壁S上的保護層310，以於發光二極體晶片100的側壁S上形成一絕緣層I。移除連續性絕緣材料層I1的方法包括蝕刻。Thereafter, referring to FIG. 3C, the continuous insulating material layer I1 covered by the protective layer 310 on the top surface of the wafer 100 and the protective layer 310 on the sidewall S are removed to form on the sidewall S of the LED wafer 100. An insulating layer I. The method of removing the continuous insulating material layer I1 includes etching.
值得注意的是，上述三種製作方法是以平面式的發光二極體結構為例做說明，而熟習本領域技術者亦可將相同的製作方法應用在垂直式的發光二極體結構上。以下則將詳細介紹本發明一實施例之發光二極體結構。It should be noted that the above three manufacturing methods are exemplified by a planar light-emitting diode structure, and those skilled in the art can apply the same manufacturing method to the vertical light-emitting diode structure. Hereinafter, the structure of the light-emitting diode according to an embodiment of the present invention will be described in detail.
圖4繪示本發明一實施例之發光二極體結構的剖面圖。請參照圖4，本實施例之發光二極體結構400包括一發光二極體晶片100以及一絕緣層I。發光二極體晶片100 為一平面式的發光二極體晶片，其具有一底面B、相對於底面B的二頂面U1、U2以及與頂面U1、U2相連的多個側壁S，發光二極體晶片100具有配置於頂面U1、U2上的多個電極E1、E2。4 is a cross-sectional view showing the structure of a light emitting diode according to an embodiment of the present invention. Referring to FIG. 4, the LED structure 400 of the present embodiment includes a light emitting diode chip 100 and an insulating layer 1. Light-emitting diode wafer 100 A planar LED chip having a bottom surface B, two top surfaces U1 and U2 opposite to the bottom surface B, and a plurality of side walls S connected to the top surfaces U1 and U2. The LED array 100 has a configuration. A plurality of electrodes E1, E2 on the top surfaces U1, U2.
在本實施例中，發光二極體晶片100包括一第一型摻雜半導體層112、一第二型摻雜半導體層114以及位於第一型摻雜半導體層112與第二型摻雜半導體層114之間的一發光層116。第一型摻雜半導體層112、第二型摻雜半導體層114以及發光層116的材質包括砷化鎵(GaAs)、磷化鎵(GaP)、氮化鎵(GaN)等Ⅲ－V族化合物半導體材料。第一型摻雜半導體層112與第二型摻雜半導體層114可分別為n型摻雜半導體層與p型摻雜半導體層。In this embodiment, the LED array 100 includes a first type doped semiconductor layer 112, a second type doped semiconductor layer 114, and a first type doped semiconductor layer 112 and a second type doped semiconductor layer. A light emitting layer 116 between 114. The materials of the first type doped semiconductor layer 112, the second type doped semiconductor layer 114, and the light emitting layer 116 include III-V compounds such as gallium arsenide (GaAs), gallium phosphide (GaP), gallium nitride (GaN), and the like. semiconductors. The first type doped semiconductor layer 112 and the second type doped semiconductor layer 114 may be an n-type doped semiconductor layer and a p-type doped semiconductor layer, respectively.
此外，發光二極體晶片100還可包括一磊晶層120，磊晶層120位於發光二極體晶片100與承載基板200之間。磊晶層120的材質例如是矽(Si)、玻璃(Glass)、砷化鎵(GaAs)、氮化鎵(GaN)、砷化鋁鎵(AlGaAs)、磷化鎵(GaP)、碳化矽(SiC)、磷化銦(InP)、氮化硼(BN)、氧化鋁(Al2 O3 )或氮化鋁(AlN)。In addition, the LED wafer 100 may further include an epitaxial layer 120 between the LED substrate 100 and the carrier substrate 200. The material of the epitaxial layer 120 is, for example, germanium (Si), glass (glaze), gallium arsenide (GaAs), gallium nitride (GaN), aluminum gallium arsenide (AlGaAs), gallium phosphide (GaP), tantalum carbide ( SiC), indium phosphide (InP), boron nitride (BN), aluminum oxide (Al 2 O 3 ) or aluminum nitride (AlN).
絕緣層I配置於側壁S上，並暴露出電極E1、E2與頂面U1、U2。在本實施例中，絕緣層I還覆蓋在磊晶層120的側壁122上。在本實施例中，絕緣層I的材質可包括第一型摻雜半導體層112的氧化物、發光層116的氧化物以及第二型摻雜半導體層114的氧化物。在本實施例中，絕緣層I的材質可包括含鎵的氧化物以及含氮的氧化 物。此外，絕緣層I的材質可包括含鎵的氧化物以及含磷的氧化物。絕緣層的材質包括含矽的氧化物(如二氧化矽)。另外，在其他實施例中，絕緣層I例如是物理氣相沉積層、化學氣相沉積層、濺鍍層或電子束成長層。The insulating layer I is disposed on the side wall S and exposes the electrodes E1, E2 and the top surfaces U1, U2. In the present embodiment, the insulating layer I is also covered on the sidewall 122 of the epitaxial layer 120. In this embodiment, the material of the insulating layer I may include an oxide of the first type doped semiconductor layer 112, an oxide of the light emitting layer 116, and an oxide of the second type doped semiconductor layer 114. In this embodiment, the material of the insulating layer I may include gallium-containing oxide and nitrogen-containing oxidation. Things. Further, the material of the insulating layer I may include a gallium-containing oxide and a phosphorus-containing oxide. The material of the insulating layer includes a cerium-containing oxide such as cerium oxide. In addition, in other embodiments, the insulating layer I is, for example, a physical vapor deposited layer, a chemical vapor deposited layer, a sputtered layer, or an electron beam grown layer.
圖5繪示本發明另一實施例之發光二極體結構的剖面圖。請參照圖5，本實施例之發光二極體結構500包括一發光二極體晶片510以及一絕緣層I。值得注意的是，本實施例之發光二極體結構500與圖4之發光二極體結構400相似，兩者差異之處僅在於本實施例之發光二極體晶片510為一垂直式的發光二極體晶片。此外，發光二極體晶片510還包括一導電層512，其位於發光二極體晶片510與電極E2之間，且絕緣層I亦覆蓋導電層512的側壁512a。FIG. 5 is a cross-sectional view showing the structure of a light emitting diode according to another embodiment of the present invention. Referring to FIG. 5, the LED structure 500 of the present embodiment includes a light emitting diode chip 510 and an insulating layer 1. It should be noted that the LED structure 500 of the present embodiment is similar to the LED structure 400 of FIG. 4, and the difference is only that the LED array 510 of the embodiment is a vertical illumination. Diode wafer. In addition, the LED wafer 510 further includes a conductive layer 512 between the LED wafer 510 and the electrode E2, and the insulating layer I also covers the sidewall 512a of the conductive layer 512.
綜上所述，本發明是在發光二極體晶片的側壁上形成絕緣層，以填補側壁上的缺陷並使側壁鈍化。如此一來，絕緣層可降低漏電流產生的機率，並提升發光二極體晶片在電性上的穩定性。此外，絕緣層覆蓋側壁可保護側壁免於受到外界環境或是後續製程的污染或是損壞，進而提升製程良率。In summary, the present invention forms an insulating layer on the sidewall of the LED wafer to fill defects in the sidewall and passivate the sidewall. In this way, the insulating layer can reduce the probability of leakage current generation and improve the electrical stability of the LED wafer. In addition, the insulating layer covers the sidewall to protect the sidewall from contamination or damage to the external environment or subsequent processes, thereby improving the process yield.
再者，在後續的固晶過程中，由於絕緣層覆蓋發光二極體晶片的側壁，故可避免習知技術中因銀膠溢流至側壁而導致p型摻雜半導體層與n型摻雜半導體層之間電性短路的問題。如此一來，絕緣層可提升製程良率並降低製作成本。Moreover, in the subsequent die bonding process, since the insulating layer covers the sidewall of the LED chip, the p-doped semiconductor layer and the n-doping may be avoided due to the overflow of the silver paste to the sidewall in the prior art. The problem of electrical short between semiconductor layers. In this way, the insulating layer can improve the process yield and reduce the manufacturing cost.
雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the invention has been disclosed above by way of example, it is not intended to be limiting The scope of the present invention is defined by the scope of the appended claims, and the scope of the invention is defined by the scope of the appended claims. quasi.
100、510‧‧‧發光二極體晶片100, 510‧‧‧Light Emitter Wafer
112‧‧‧第一型摻雜半導體層112‧‧‧First type doped semiconductor layer
114‧‧‧第二型摻雜半導體層114‧‧‧Second type doped semiconductor layer
B‧‧‧底面B‧‧‧ bottom
116‧‧‧發光層116‧‧‧Lighting layer
120‧‧‧磊晶層120‧‧‧ epitaxial layer
122、512a、S‧‧‧側壁122, 512a, S‧‧‧ side walls
200‧‧‧承載基板200‧‧‧bearing substrate
310‧‧‧保護層310‧‧‧Protective layer
400、500‧‧‧發光二極體結構400, 500‧‧‧Lighting diode structure
512‧‧‧導電層512‧‧‧ Conductive layer
A‧‧‧抗氧化層A‧‧‧Antioxidant layer
A1‧‧‧連續性抗氧化材料層A1‧‧‧Continuous layer of antioxidant material
C‧‧‧覆蓋層C‧‧‧ Coverage
C1‧‧‧連續性覆蓋材料層C1‧‧‧Continuous covering material layer
E1、E2‧‧‧電極E1, E2‧‧‧ electrodes
I‧‧‧絕緣層I‧‧‧Insulation
I1‧‧‧連續性絕緣材料層I1‧‧‧Continuous insulating material layer
U、U1、U2‧‧‧頂面U, U1, U2‧‧‧ top
圖1A~圖1D繪示本發明一實施例之發光二極體結構的製作方法的剖面圖。1A-1D are cross-sectional views showing a method of fabricating a light emitting diode structure according to an embodiment of the present invention.
圖2A~圖2D繪示本發明另一實施例之發光二極體結構的製作方法的剖面圖。2A-2D are cross-sectional views showing a method of fabricating a light emitting diode structure according to another embodiment of the present invention.
圖3A~圖3C繪示本發明又一實施例之發光二極體結構的製作方法的剖面圖。3A-3C are cross-sectional views showing a method of fabricating a light emitting diode structure according to still another embodiment of the present invention.
圖4繪示本發明一實施例之發光二極體結構的剖面圖。4 is a cross-sectional view showing the structure of a light emitting diode according to an embodiment of the present invention.
圖5繪示本發明另一實施例之發光二極體結構的剖面圖。FIG. 5 is a cross-sectional view showing the structure of a light emitting diode according to another embodiment of the present invention.
100‧‧‧發光二極體晶片100‧‧‧Light Diode Wafer
112‧‧‧第一型摻雜半導體層112‧‧‧First type doped semiconductor layer
114‧‧‧第二型摻雜半導體層114‧‧‧Second type doped semiconductor layer
116‧‧‧發光層116‧‧‧Lighting layer
120‧‧‧磊晶層120‧‧‧ epitaxial layer
122、S‧‧‧側壁122, S‧‧‧ sidewall
400‧‧‧發光二極體結構400‧‧‧Lighting diode structure
B‧‧‧底面B‧‧‧ bottom
E1、E2‧‧‧電極E1, E2‧‧‧ electrodes
I‧‧‧絕緣層I‧‧‧Insulation
U1、U2‧‧‧頂面U1, U2‧‧‧ top surface
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| TW513820B (en) * | 2001-12-26 | 2002-12-11 | United Epitaxy Co Ltd | Light emitting diode and its manufacturing method |
| TWI253188B (en) * | 2004-11-19 | 2006-04-11 | Epistar Corp | Method of forming light emitting diode array |
| TW200828623A (en) * | 2006-12-27 | 2008-07-01 | Epitech Technology Corp | Light-emitting diode and method for manufacturing the same |
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| TW201023399A (en) | 2010-06-16 |
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