TW471190B

TW471190B - LED having current-spreading and increased utility of light emitting area

Info

Publication number: TW471190B
Application number: TW90103685A
Authority: TW
Inventors: Bo-Ren Wu; Nai-Guan Yi; Jian-An Chen; Nai-Chiuan Chen
Original assignee: Uni Light Technology Inc
Priority date: 2001-02-19
Filing date: 2001-02-19
Publication date: 2002-01-01

Abstract

The present invention provides an optical semiconductor device, which at least comprises a substrate; a first semiconductor structure located on the substrate; a light emitting structure located on the first portion of the first semiconductor; a first contact structure located on the second portion of the first semiconductor structure; the second portion of the first semiconductor structure is separated from the first portion, the first contact structure has the first shape; a second semiconductor structure located on the light emitting structure; a transparent contact located on the second semiconductor structure, the transparent contact has a cut portion to expose part of the second semiconductor structure, and has the second shape; a second contact structure located on the cut portion of the transparent contact layer to contact the second semiconductor structure, and has a third shape, the third shape of the second contact structure and the transparent contact having the second shape and the first contact structure having the first shape are matched, so as to form plural current paths from the first contact structure to the second contact structure, which are closer.

Description

471190 五、發明說明（1) 5 - 1發明領域：本發明係有關於一種發光二極體元件，特別是一種可同時分散電流及提高發光面積利用率的發光二極體。 5 - 2發明背景：對於光半導體元件而言，發光二極體（LED)可能是最被人所熟知的，因為它應用在各式各樣的產品上，例如科學儀器、醫療儀器，最常見的，是使用在消費性產品上，這些發光二極體可作為各種訊號、指示器、測量儀器、量錶的光源。如發光二極體的半導體光源之所以如此被大量作為光源輸出元件，主要是因為它們通常有很長的使用壽命、低耗能及高可信賴度。自從1 9 7 0年代早期開始，以氮化鎵為基本的材質便因為其寬廣的帶隙特性而引起發光器應用的高度注意。另一方面，絕緣及晶格錯置的基板，例如藍寶石（s a p p h i r e，三氧化二鋁aluminum oxide， Al2〇 3)，因其具有熱穩定及透光度特性，且因目前仍無晶格匹配之基板，故被廣泛應用於第三族氮化物磊晶的基板。在美國專利4 1 5 3 9 0 5中已提出，在藍寶石基板上長出氮化鎵為基本的發光二極體結構，並在其η及p型層上做相對應之歐姆接觸，以完成平面471190 V. Description of the invention (1) 5-1 Field of the invention: The present invention relates to a light-emitting diode element, particularly a light-emitting diode that can simultaneously disperse current and improve the utilization of light-emitting area. 5-2 Background of the Invention: For optical semiconductor devices, light-emitting diodes (LEDs) are probably the most well-known because they are used in a wide variety of products, such as scientific instruments, medical instruments, and the most common It is used in consumer products. These light-emitting diodes can be used as light sources for various signals, indicators, measuring instruments, and meters. Semiconductor light sources such as light-emitting diodes are so widely used as light source output components mainly because they usually have a long service life, low energy consumption, and high reliability. Since the early 1970s, gallium nitride-based materials have attracted much attention in light emitter applications due to their wide band gap characteristics. On the other hand, substrates with insulation and lattice misalignment, such as sapphire (aluminum oxide, Al203), are thermally stable and transparent, and there is currently no lattice matching. Substrate, so it is widely used as the substrate for Group III nitride epitaxy. It has been proposed in U.S. Patent No. 41,593,05 that a gallium nitride-based light emitting diode structure is grown on a sapphire substrate, and corresponding ohmic contacts are made on its η and p-type layers to complete flat

471190 五、發明說明（2) 式的LED結構。然而，要形成p型高導電性的氮化鎵層仍是很困難的事’·因此，在p型氮化鎵上之歐姆接觸較不易製造’且p型層之電流也較不易散開。、敢近’ Akasaki et al·及 Nakamura et al·已經提出改善p型氮化鎵導電性的方法。然而，p型氮化鎵導電性還是落於η型氮化鎵之後。結果，也許最常見到的，p型氮化鎵被置於以氮化鎵為基本之發光二極體結構的最頂部1而 Ρ型層上的透明接觸電極（c 0 n t a c t)便成為一較佳元件設計所不可或缺的。對於發光體表面最大的利用效率而言，n 型與P型接觸結構被盡可能安排在最寬遠的位置，即一元件相反的角落上。弟圖中顯示為一傳統氮化錄為基材之發光二極體的正視圖。一 ρ型透明電極1 1 5中有一切斷的部分1 1 7，以利於暴露出部分的ρ型半導體層113。一打線用墊（b〇nding pad) 11 6透過切斷的部分117緊緊黏在ρ型半導體層113上，並且和ρ型透明電極11 5有電性上的連接。此切斷的部分 1 1 7從打線用墊Π 6處與n型半導體層π 2上所提供的n型電極1 1 4被安排於最遠的角落位置上。但是這樣的接觸安排會有電流在電極間壅塞（current crowd i ng )的缺點。結果導致發光表面無法有效率的利用，且更有可能的，元件及透明接觸電極的壽命會因為電流壅塞而縮短。471190 V. Description of the invention (2) LED structure. However, it is still difficult to form a p-type high-conductivity gallium nitride layer '. Therefore, an ohmic contact on the p-type gallium nitride is harder to make' and the current of the p-type layer is also less likely to spread. Dare to approach ’Akasaki et al. And Nakamura et al. Have proposed methods to improve the conductivity of p-type gallium nitride. However, the conductivity of p-type GaN is still behind that of n-type GaN. As a result, perhaps the most common, p-type gallium nitride is placed on the topmost 1 of a light-emitting diode structure based on gallium nitride and the transparent contact electrode (c 0 ntact) on the p-type layer becomes a comparative Indispensable for good component design. For the maximum utilization efficiency of the surface of the luminous body, the n-type and p-type contact structures are arranged as far as possible at the widest position, that is, the corner of the opposite element. The figure shows a front view of a light-emitting diode with a conventional nitrided substrate. A p-type transparent electrode 1 15 has a cut-off portion 1 1 7 to facilitate exposing a part of the p-type semiconductor layer 113. A bonding pad 116 is tightly adhered to the p-type semiconductor layer 113 through the cut portion 117, and is electrically connected to the p-type transparent electrode 115. The cut portion 1 1 7 is arranged at the furthest corner position from the n-type electrode 1 1 4 provided on the wiring pad Π 6 and the n-type semiconductor layer π 2. However, such a contact arrangement has the disadvantage of current crowding between the electrodes. As a result, the light-emitting surface cannot be used efficiently, and it is more likely that the life of the element and the transparent contact electrode will be shortened by current congestion.

4 五、發明說明（3) 5 - 3發明目的及概述：鑒於上述之發明背景中，本發明之主要目一分散電流與提高發光面積利用率的發光二極透明接觸結構上挖空的中空圖案來阻絕電流的徑，達到分散電流的目的，同時增加發光面積本發明之另一目的在於提供一避免電流麥極體；利用設計接觸電極的幾何形狀及相對位電極間的電流路徑長度相近。本發明之再一目的在於提供一降低表面狀的發光二極體，利用一保護層降低表面狀態（ state)的數目及降低漏電流的情形。根據以上所述之目的，本發明提供一種光至少包括一基板；一第一半導體結構位於基板結構位於第一半導體結構之一第一部份上；一構位於第一半導體結構之一第二部份上，第一之第二部份與第一部份是分離的，第一接觸結一形狀；一第二半導體結構位於發光結構上；位於第二半導體結構上，透明接觸具有一切斷露出部分的第二半導體結構，並且具有一第二的在於提供體；利用在直線捷徑路的使用率。塞的發光二置使得接觸丨p 態及漏電流 surface 半導體元件上；一發光第一接觸結半導體結構 φ 構具有一第一透明接觸的部分以暴形狀；及一4 V. Description of the invention (3) 5-3 Purpose and summary of the invention: In view of the above background of the invention, the main purpose of the present invention is to dispense current and hollow out the hollow pattern on the light-emitting diode transparent contact structure that improves the utilization of the light-emitting area. The purpose of the present invention is to block the diameter of the current, to achieve the purpose of dispersing the current, and to increase the light-emitting area. Another object of the present invention is to provide a current-avoiding microphone; the geometry of the design contact electrode and the length of the current path between the opposing electrodes are similar. Yet another object of the present invention is to provide a light-emitting diode with a reduced surface shape, a protective layer to reduce the number of surface states and a reduction in leakage current. According to the above-mentioned object, the present invention provides a light including at least a substrate; a first semiconductor structure on a substrate structure on a first portion of a first semiconductor structure; and a structure on a second portion of a first semiconductor structure In part, the first and second parts are separated from the first part, and the first contact junction has a shape; a second semiconductor structure is located on the light emitting structure; the second contact structure is located on the second semiconductor structure, and the transparent contact has a cut-off exposed portion It has a second semiconductor structure, and has a second lie in the provider; using the utilization rate of the straight shortcut. The light emitting element of the plug is placed on the semiconductor element in contact with the p-state and the leakage current; a light emitting first contact junction semiconductor structure φ structure has a first transparent contact portion in a violent shape; and

第7頁 471190 五、發明說明（4) 第三接接到第一二觸的第第接構的至，結狀構上觸形結分接一觸。部二第接徑的第有一路斷，具第的切狀及從近的形觸供相層三接提有觸第明以具接一透藉徑明有的，路透具狀係流於並形關電位，二的個構構第合數結結有配複觸體具相的接導與構構二半狀結結第二形觸觸 5 - 4發明詳細說明：本發明用示意圖詳細描述如下，在詳述本發明實施例時’表不半導體結構的剖面圖在半導體製程中會不依一般比例作局部放大以利說明，然不應以此作為有限定的認知。此外，在實際的製作中，應包含長度、寬度及深度的三維空間尺寸。在本較佳實施例中，以GaN為基本的元件來證明；無論如何，本發明不應被侷限於這些材質中。所謂的以GaN 為基本的材質意指由A1 xGaYIn(1_x_Y)N材質製作的，其中X與Y 介於0與1之間。而所謂以GaN為基本的LED指的是一具有較窄能隙的GaN為基本的發光結構介於具有較寬能隙的GaN為基本結構之單層或多層之間，在發光結構的不同側具有不同的導電型態。此外，本發明除可用於發光二極體長在一絕緣基板上之外，也可以應用在發光二極體長在其他基板，但垂直方向上無法導通的結構，例如GaAs、GaP、S i及Page 7 471190 V. Description of the invention (4) The third connection to the first connection of the first connection, the contact structure of the knot-shaped structure is tapped and touched. The first path of the second part of the path is cut, with the first cut shape and the near-shaped contact layer. The third part is touched by the first part of the path, and the second path is connected by the path. The shape of the potential, the second composite number of the two structures has a contact with a complex contact body and the second half of the structure of the second half of the structure. Detailed description of the invention: The present invention is described in detail with a schematic diagram as follows, In the detailed description of the embodiments of the present invention, the cross-sectional view showing the semiconductor structure will not be partially enlarged according to the general scale in the semiconductor manufacturing process to facilitate explanation, but it should not be used as a limited recognition. In addition, in actual production, three-dimensional space dimensions of length, width and depth should be included. In this preferred embodiment, GaN is used as a basic element for proof; however, the present invention should not be limited to these materials. The so-called GaN-based material means that it is made of A1 xGaYIn (1_x_Y) N material, where X and Y are between 0 and 1. The so-called GaN-based LED refers to a GaN-based light-emitting structure with a narrow energy gap between single or multiple layers of a GaN-based structure with a wide energy gap. On different sides of the light-emitting structure Has different conductivity types. In addition, the present invention can be applied to a structure where the light emitting diode is grown on an insulating substrate, but also can be used in a structure where the light emitting diode is grown on another substrate, but cannot be conducted in a vertical direction, such as GaAs, GaP, Si, and

471190 五、發明說明（5)471190 V. Description of the invention (5)

SiC。本發明以元件的幾何形狀及接觸形式的改進來改善電流分散的方法。在這些實施例中，一透光且導電的歐姆接觸層置於元件導電性較小一側的頂部；所有的接觸層都被精心設計用以減少電流壅塞、加大發光面積及進而增加 LED的效率及使用壽命。本發明的詳細說明如下；無論如何，本發明不應被侷限於如下的實施例中。如第二圖及第三圖所示分別為本發明的剖面及正視示意圖。一 η型氮化鎵結構1 2形成於一絕緣基板1 1，例如藍寶石基板上。在η型氮化鎵結構1 2上為一發光結構1 3，接著形成一 Ρ型氮化鎵結構1 4。η型及ρ型氮化鎵皆可以為氮化鎵單層、氮化鎵與氮化鋁多層結構，或結合其他組合的多層結構。發光結構可以為均質（h 〇 m 〇 g e η 〇 u s ) ρ - η接合、雙異質接合（hetero -junction)、單一量子井結構、或多重量子井結構。一較佳元件結構包括在藍寶石基板11上的單層η型氮化鎵、一 InGaN/GaN多重量子井發光層，及 AlGaN/GaN ρ型層；這樣的半導體發光二極體是依如此的安排蠢晶形成的。接著，此磊晶晶圓要進行元件製程，其包括以平頂蝕刻（m e s a e t c h i n g )、金屬化及熱處理製程定義晶粒。金屬化完成一透明接觸電極1 5、許多的中空圖案1 6、ρ型接觸SiC. The invention improves the current dispersion by improving the geometry and contact form of the element. In these embodiments, a light-transmitting and conductive ohmic contact layer is placed on top of the less conductive side of the element; all contact layers are carefully designed to reduce current congestion, increase the light-emitting area and further increase the LED Efficiency and service life. The detailed description of the present invention is as follows; however, the present invention should not be limited to the following examples. As shown in the second and third figures, the sectional and front views of the present invention are shown. An n-type GaN structure 12 is formed on an insulating substrate 11 such as a sapphire substrate. A light emitting structure 13 is formed on the n-type gallium nitride structure 12, and a p-type gallium nitride structure 14 is formed next. Both n-type and p-type gallium nitride can be a single layer of gallium nitride, a multilayer structure of gallium nitride and aluminum nitride, or a combination of other multilayer structures. The light emitting structure may be a homogeneous (h 0 m 0 g e η 〇 us) ρ-η junction, a hetero-junction, a single quantum well structure, or a multi-bionron well structure. A preferred device structure includes a single layer of n-type gallium nitride on the sapphire substrate 11, an InGaN / GaN multiple quantum well light-emitting layer, and an AlGaN / GaN p-type layer; such a semiconductor light-emitting diode is arranged as such Stupid crystals formed. Next, the epitaxial wafer is subjected to a component process, which includes defining a die by a flat top etch (me s a e t c h i n g), metallization, and heat treatment processes. Metallization completes a transparent contact electrode 15, many hollow patterns 16 and p-type contacts

471190 五、發明說明（6) 結構（包括導電電極與接觸層）1 7，及η型歐姆接觸結構18 。再者，熱處理製程則是完成透明接觸電極1 5的氧化，及 Ρ型接觸結構1 7與η型歐姆接觸結構1 8的回火。就正視圖來看，Ρ型接觸結構1 7與η型歐姆接觸結構1 8是分離的，也就是在垂直方向上沒有上下重疊的部分。特別要強調的是，透明接觸電極1 5的材質是氧化鎳/金、氧化鎂、氧化鋅或是五氧化二釩，在較佳實施例中，透明電極材料為氧化鎳 /金。上述的中空圖案1 6 (窗口）是本發明的關鍵，他們可以具有多折路徑的功能。第一，中空圖案1 6可以阻斷電流以捷徑通過；第二，假如它們被準確地設計時，在最長與最短的電流路徑之間，它們扮演平衡差異的功能。事實上，透明接觸電極1 5不是百分之百透光，因此設計中空圖案1 6 來提供光線從元件的耦合處直接射出，而沒有透明接觸電極阻擋的路徑，所以，如此元件的發光效率可藉由中空圖案1 6來提昇，同時具有良好的電流分散性。再者，中空圖案1 6的形狀、數目及位置並不局限於實施例中所提到的。它可以，也應該為各種元件及電流等級作最佳化的設計。特別的是，當Ρ及η型接觸結構被安排在相反一側時，本發明能發揮最大的效率。參照第四圖，也是一個正視圖，為本發明的另一實施例，應用到方形形狀的LED晶片，其中ρ型接觸結構1 7，及η型歐姆接觸結構1 8471190 V. Description of the invention (6) Structure (including conductive electrode and contact layer) 1 7 and n-type ohmic contact structure 18. Furthermore, the heat treatment process is to complete the oxidation of the transparent contact electrode 15 and the tempering of the P-type contact structure 17 and the n-type ohmic contact structure 18. From the front view, the P-type contact structure 17 and the n-type ohmic contact structure 18 are separated, that is, there is no vertical overlapping portion in the vertical direction. It is particularly emphasized that the material of the transparent contact electrode 15 is nickel oxide / gold, magnesium oxide, zinc oxide or vanadium pentoxide. In a preferred embodiment, the transparent electrode material is nickel oxide / gold. The above-mentioned hollow patterns 16 (windows) are the key of the present invention, and they can have the function of multi-folded paths. First, the hollow patterns 16 can block currents from passing through shortcuts. Second, if they are accurately designed, they play the role of balancing differences between the longest and shortest current paths. In fact, the transparent contact electrode 15 is not 100% transparent, so the hollow pattern 16 is designed to provide direct light emission from the coupling of the element without the path blocked by the transparent contact electrode. Therefore, the luminous efficiency of such a component can be achieved by hollow The pattern 16 is improved while having good current dispersibility. Furthermore, the shape, number, and position of the hollow patterns 16 are not limited to those mentioned in the embodiments. It can and should be optimized for various components and current levels. In particular, when the P and n-type contact structures are arranged on opposite sides, the present invention can exert the maximum efficiency. Referring to the fourth figure, it is also a front view, which is another embodiment of the present invention, which is applied to a square-shaped LED chip, wherein the p-type contact structure 17 and the n-type ohmic contact structure 18

第10頁 471190 五、發明說明（7) 被安排在方形相反的一側另現。表流，如的。無射波長並且，，例如鋅、氟 oxide, 應用到從案，其 —利用根據本上如有接觸間流會造走捷徑一方面，藉由減少表面狀態可進一步改進元件的表面狀態可利用一保護層1 9覆蓋在元件上以降低漏電第五圖所不。有許多的材質都可達到表面保護的目論如何，對發光體而言，表層應該使得發射光在發範圍有高度的光學傳送（optical transmission)，此保護層的性質是絕緣的或是高阻抗的。這些材質氧化鋁 '氧化矽、氮化矽、氧化鈕、氧化鈦、硫化石(calcium f1u n ^, ^ —Page 10 471190 V. Description of the invention (7) Arranged on the opposite side of the square. Table streams, such as. Non-radiation wavelength, and, such as zinc, fluorine oxide, are applied to the case, which-using shortcuts in accordance with the current will create shortcuts. On the one hand, by reducing the surface state can further improve the surface state of the component can be used- The protective layer 19 covers the element to reduce leakage current. There are many materials that can achieve the objective of surface protection. For the luminous body, the surface layer should make the emitted light have a high optical transmission in the emission range. The nature of this protective layer is insulating or high impedance. of. These materials are aluminum oxide, silicon oxide, silicon nitride, oxide button, titanium oxide, and sulfide (calcium f1u n ^, ^ —

Hfn w ^ , ^ lde，CaF 2)、氧化铪（hafnium H f 0 2)及氧化鋅等可炫人本發明任-實施例中付二要求。此保護層是可以後々不再重複強調及提及。弟一至第四圖的實施例英番认中空圖案迫使電流更均勾的散：阻：f流的：空圖幾何形狀來達到分散電流的二：’將介紹另發明在幾何形狀上的改進的τ的。如弟六圖所示為被精確設計的平頂（mesa)及接;U圖。元件結構的最短距離可保持相同。如，、、°構，如此可使得成接觸（或接觸墊）間的電流=傳統LED中的電路徑。結果，曰曰曰片上大部分^，所以電子會傾向勺面積無法有效被利用在第二個實施例中，透明接觸電極2 5、p型接觸結構Hfn w ^, ^ lde, CaF 2), hafnium oxide (hafnium H f 0 2), zinc oxide and the like can be dazzling. This protective layer can be repeated without further emphasis and reference. The first to fourth embodiments of the first to fourth figures recognize that the hollow pattern forces the current to be more evenly dispersed: resistance: f flow: empty figure geometry to achieve the current dispersion: two will be introduced to improve the geometric shape of another invention τ's. Figure 6 shows the flat top (mesa) and connection; The shortest distance of the component structure can be kept the same. Such as, ,, and so on, so that the current between contacts (or contact pads) = the electrical path in traditional LEDs. As a result, most of the chips are on the chip, so the electrons tend to be used. The area cannot be effectively used. In the second embodiment, the transparent contact electrode 25, p-type contact structure

第11頁 4/iiyu 五、發明說明（8)Page 11 4 / iiyu V. Description of Invention (8)

27及η型接觸結構28在〜M 的安排使得p型接觸結構27 a結構22之上。它們被如此最短距離，均維持相同\1上任一點至η型接觸結構28間的 27有一四分之一圓的形壯特別要強調的是，Ρ型接觸結構狀，其與ρ型接觸結構27且而透明接觸電極25為一扇形形過透明接觸電極25從_ 緒=同的圓心'。也就是說’透構28的放射狀距離皆相同。，.Ό構2 7散開電流至η型接觸結 32上安排另一 Ξ ί ΐ與結構33上的平頂（mesa)結構構38及透明接觸電極35。的P型接觸結構37、η型接觸結 3 7與η型接觸結構3 8被安 '別要說明的是，Ρ型接觸結構。也就是說，ρ型接觸結:反面’而不是相反的角落維方向上展開。這樣的形斑接觸結構38的形狀在二與η型接觸結構38間建立相非可以在Ρ型接觸結構37 J長度的電流路徑。接著，利用較對稱的接觸積的更有效利用進行改進，2電流的分散及發光面述實施例是相同的，但平頂鱼觸：所不，磊晶結構與上實施例中，環狀η型接觸社構、的形狀是不同的。在此 4 9沾μ 士· 〇冓48位在元件的周圍且在η型觸/柽4 s ，而兩者皆位於平頂的底部。一 Ρ型透明接The arrangement of 27 and n-type contact structure 28 at ~ M makes p-type contact structure 27 a structure 22 a. They are kept at such a shortest distance, and they maintain the same shape from any point on the \ 1 to the η-type contact structure 28. A quarter-circle shape is particularly emphasized. The P-type contact structure is similar to the ρ-type contact structure. 27, and the transparent contact electrode 25 is a fan-shaped over transparent contact electrode 25 from the same circle center. In other words, the radial distances of the 'transparent structures 28 are the same. The structure 27 disperses the current to the n-type contact junction 32 and arranges another structure ί and the flat mesa structure 38 and the transparent contact electrode 35 on the structure 33. The P-type contact structure 37, the n-type contact junction 37, and the n-type contact structure 38 are installed. 'It should be noted that the P-type contact structure. That is, the p-type contact knot: the opposite side 'is spread in the opposite corner dimension direction. The shape of the spot-shaped contact structure 38 establishes a current path between the second and n-type contact structures 38, which can be a length of 37 J in the P-type contact structure. Next, the use of a more symmetrical contact product is used for improvement. The current dispersion and luminescence are the same in the embodiment described above, but the flat-topped fish touch: No, the epitaxial structure is the same as in the previous embodiment. The shape of the contact organization is different. In this case, 49 μμ · 48 is located around the element and is in the n-type contact / 柽 4 s, and both are located at the bottom of the flat top. A P-type transparent connection

觸电極45位於P型GaN層44的 > 古 Q 的頂部。A 了八#帝、、= 且口型6以層44位於平頂 Φ 、式：刀月電，政，P型接觸結構4 7的位置在平頂的或接近中心的位置’且n型接觸結構48具有接觸墊及The contact electrode 45 is located on top of > Q of the P-type GaN layer 44. A 了八 # 帝、、 = and the mouth shape 6 is located on the flat top with layer 44 Φ, type: knife and moon electricity, government, P-type contact structure 4 7 The position is on the flat top or near the center 'and the n-type contact Structure 48 has contact pads and

第12頁 471190 五、發明說明（9) 導電環。相同的，兩種接觸（47and48)的形狀及位置安排可以確保所有在接觸間的電流距離在平頂中是相等或近乎相等的；因而元件可以表現出良好的電流分散及高面積使用效率。特別要說明的是，p型接觸結構4 7的形狀並不侷限於第八圖中所示；對於1 4 * 1 4密爾（m i 1 )或是更小面積的晶片而言，接觸的形狀可以簡單些，例如圓形、方形含或不含延伸之指狀設計等等。當然，如此的設計也可應用到以下的實施例中。接著為另外一實施例，第九圖顯示其正視圖，第十圖為其剖面示意圖。因為η型材質具有較佳的導電性及良好的載子漂移率，所以此實施例將應用到η型材質的電流分散能力。一 η型接觸結構5 8被安放在反轉平頂（或井）結構的中心或近中心位置。一 ρ型透明接觸電極5 5覆蓋在元件的其他表面上，如此可將發光面積的效率最大化。電流分散可因環狀Ρ型接觸結構5 7增強。在本較佳實施例中，ρ型透明接觸電極的面積大於第八圖中Ρ型透明接觸電極4 5，如此可提供一更大的可利用的發光面積。在此要強調的是，第九圖之實施例與上述其他實施例的磊晶結構仍是相同的，那些磊晶層，包括η型GaN結構52、發光結構53及ρ型 GaN結構54和第二圖中的材質相同；而接觸的材質，例如透明接觸電極5 5、η型接觸結構5 8與ρ型接觸結構5 7，也和第二圖中的材質相同。根據這些元件設計，電流可以以較低的接觸電阻進行電流分散，進而延長透明接觸電極的使Page 12 471190 V. Description of the invention (9) Conductive ring. Similarly, the shape and position arrangement of the two contacts (47and48) can ensure that all the current distances between the contacts are equal or nearly equal in the flat top; therefore, the component can exhibit good current dispersion and high area use efficiency. In particular, the shape of the p-type contact structure 47 is not limited to that shown in the eighth figure; for a wafer of 1 4 * 1 4 mil (mi 1) or a smaller area, the shape of the contact It can be simple, such as round, square design with or without extended fingers. Of course, such a design can also be applied to the following embodiments. Next is another embodiment. The ninth figure shows a front view, and the tenth figure shows a schematic sectional view. Since the η-type material has better conductivity and a good carrier drift rate, this embodiment will be applied to the current-dispersing ability of the η-type material. A n-type contact structure 58 is placed at the center or near the center of the inverted flat-top (or well) structure. A p-type transparent contact electrode 55 covers the other surfaces of the element, so that the efficiency of the light emitting area can be maximized. Current dispersion can be enhanced by the ring-shaped P-type contact structure 57. In the preferred embodiment, the area of the p-type transparent contact electrode is larger than that of the P-type transparent contact electrode 45 in the eighth figure, so that a larger available light-emitting area can be provided. It should be emphasized that the embodiment of the ninth figure is still the same as the epitaxial structure of the other embodiments described above. Those epitaxial layers include the n-type GaN structure 52, the light-emitting structure 53 and the p-type GaN structure 54 and the first embodiment. The materials in the two figures are the same; and the materials of the contacts, such as the transparent contact electrodes 55, the n-type contact structure 5 8 and the p-type contact structure 57, are also the same as those in the second figure. According to the design of these components, the current can be dispersed with a lower contact resistance, thereby extending the use of the transparent contact electrode.

第13頁五、發明說明（10) 一 ---- 用壽命。本發明提供一種發光二極體元件至少一第-半導體結構位於基板上；—發光結：：導體 2構之：第—部份上；—第—接觸結構位於：：半以 :t:ί:部份上，第一半導體結構之第二部份盘第-；饬疋分離的，弟一接觸結構具有—第一形一體結構位於發光結構上；一透明，弟一丰ν 上，透明接觸具有一切斷的第二半導體結構體結構，並且具有一第二形狀。的第二半導明接觸層的切斷的部分±，接觸到第二；巧=位於透有-弟二形狀，第二接觸結構的第三：：具，藉以提供從第—接觸結構：：：相配合的關係路徑具有相近的路^ ㈣結構的複數個電流以上所述之實施例僅為本發明之便說明本發明之技術，並非 :、靶例，提供方他未脫離本發明所揭示之 =$ ^明之範圍，凡其，均應包含在本發明之Ϊ 元成之等效變更或修飾Page 13 V. Description of the invention (10) a ---- Use life. The present invention provides a light-emitting diode element on which at least one of the first semiconductor structure is located on the substrate; the light-emitting junction: the conductor 2 is formed on the first portion; the first contact structure is located on the half-tipped: t: ί: In part, the second part of the first semiconductor structure is discontinued; 饬疋 separated, the first contact structure has-the first integrated structure is located on the light-emitting structure; a transparent, the first contact ν, the transparent contact has A severed second semiconductor structure has a second shape. The cut-off part of the second semi-conductive contact layer ±, comes into contact with the second; Qiao = is located in the shape of the transparent-second, the third of the second contact structure: with, so as to provide from the first-contact structure :: : The matching relationship paths have similar paths ^ The structure of the plurality of currents The embodiments described above are only for the purpose of the present invention and will explain the technology of the present invention, and are not: Targets, the provider does not depart from the disclosure of the present invention The scope of == ^ Ming, all of which should be included in the equivalent changes or modifications of the present invention

第14頁 471190 圖式簡單說明第一圖為先期文獻氮化鎵發光二極體的正視示意圖；第二圖為本發明之發光二極體的剖面示意圖，包含在透明接觸電極上具有中空圖案；第三圖至第四圖為本發明由AA’切開的第二圖之發光二極體的正視示意圖，說明本發明兩接觸結構的幾何形狀及相對位置；第五圖為本發明之發光二極體的另一剖面示意圖，說明覆蓋一保護層以提昇元件的可靠度；第六圖至第八圖為本發明之發光二極體的另一系列的正視示意圖，說明本發明兩接觸結構的幾何形狀及相對位置；第九圖為本發明之發光二極體的另一系列的正視示意圖，說明η型接觸結構置於中間的方式；及第十圖為第九圖實施例的剖面示意圖，說明η型接觸結構置於中間的方式。主要符號說明 11 絕緣基板Page 471190 Brief description of the drawings The first picture is a schematic front view of a gallium nitride light emitting diode from an earlier document; the second picture is a schematic cross-sectional view of a light emitting diode of the present invention, which includes a hollow pattern on a transparent contact electrode; The third to fourth figures are schematic front views of the light-emitting diode of the second figure cut by AA ′ according to the present invention, illustrating the geometry and relative positions of the two contact structures of the present invention; the fifth figure is the light-emitting diode of the present invention. Another cross-sectional schematic view of the body, which covers a protective layer to improve the reliability of the device; Figures 6 to 8 are schematic front views of another series of light-emitting diodes of the present invention, illustrating the geometry of the two-contact structure of the present invention Shape and relative position; The ninth figure is a schematic front view of another series of light emitting diodes of the present invention, illustrating the manner in which the n-type contact structure is placed in the middle; and the tenth figure is a schematic cross-sectional view of the ninth embodiment The n-type contact structure is placed in the middle. Explanation of Main Symbols 11 Insulating Substrate

第15頁 471190 圖式簡單說明 12 η型氮化鎵結構 13 發光結構 14 ρ型氮化鎵結構 15 透明接觸電極 16 中空圖案 17 ρ型接觸結構 18 η型歐姆接觸結構 19 保護層 22 η型GaN結構 25 透明接觸電極 || 2 7 ρ型接觸結構 28 η型接觸結構 32 平頂結構 33 η型GaN結構 35 透明接觸電極 37 ρ型接觸結構 38 η型接觸結構 42 η型GaN層 4 4 ρ型G a N層 45 ρ型透明接觸電極 m 47 ρ型接觸結構 48 η型接觸結構 52 η型GaN結構 53 發光結構Page 15 471190 Brief description of drawings 12 η-type GaN structure 13 Light-emitting structure 14 ρ-type GaN structure 15 Transparent contact electrode 16 Hollow pattern 17 ρ-type contact structure 18 η-type ohmic contact structure 19 Protective layer 22 η-type GaN Structure 25 Transparent contact electrode || 2 7 ρ-type contact structure 28 η-type contact structure 32 Flat-top structure 33 η-type GaN structure 35 Transparent contact electrode 37 ρ-type contact structure 38 η-type contact structure 42 η-type GaN layer 4 4 ρ-type G a N layer 45 ρ-type transparent contact electrode m 47 ρ-type contact structure 48 η-type contact structure 52 η-type GaN structure 53 Light emitting structure

第16頁 471190 圖式簡單說明 54 p型GaN結構 55 p型透明接觸電極 5 7 p型接觸結構 58 η型接觸結構 112 η型半導體層 113 ρ型半導體層 I 14 η型電極 115 ρ型電極 116 打線用塾（bonding pad) II 7 切斷的部分Page 16 471190 Brief description of drawings 54 p-type GaN structure 55 p-type transparent contact electrode 5 7 p-type contact structure 58 η-type contact structure 112 η-type semiconductor layer 113 ρ-type semiconductor layer I 14 η-type electrode 115 ρ-type electrode 116 Bonding pad II 7 Cut off part

I 第17頁I Page 17

Claims

471190 六、申請專利範圍 1. 一種光半導體元件至少包括：一基板；一第一半導體結構位於該基板上；一發光結構位於該第一半導體結構之一第一部份上；一第一接觸結構位於該第一半導體結構之一第二部份上，該第一半導體結構之第二部份與該第一部份是分離的，該第一接觸結構具有一第一形狀；一第二半導體結構位於該發光結構上；一透明接觸位於該第二半導體結構上，該透明接觸具有一切斷的部分以暴露出該部分的第二半導體結構，並且 || 具有一第二形狀；及一第二接觸結構位於該透明接觸層的切斷的部分上，接觸到該第二半導體結構，並具有一第三形狀，該第二接觸結構的第三形狀與該具有第二形狀的透明接觸及該具有第一形狀的第一接觸結構相配合的關係藉以提供從該第一接觸結構至該第二接觸結構的複數個電流路徑具有相近的路徑。 2. 如申請專利範圍第1項之元件，其中上述之透明接觸層至少具有複數個中空圖案，該等中空圖案允許光線從該透 $ 明接觸直接射出，並且使該等電流路徑具有轉折的方向。 3. 如申請專利範圍第1項之元件，其中上述之第一形狀至少包含一第一弧形邊界。471190 6. Scope of patent application 1. An optical semiconductor device includes at least: a substrate; a first semiconductor structure is located on the substrate; a light emitting structure is located on a first part of the first semiconductor structure; a first contact structure Located on a second part of the first semiconductor structure, the second part of the first semiconductor structure is separated from the first part, the first contact structure has a first shape; a second semiconductor structure Located on the light emitting structure; a transparent contact is located on the second semiconductor structure, the transparent contact has a cut off portion to expose the second semiconductor structure of the portion, and || has a second shape; and a second contact The structure is located on the cut portion of the transparent contact layer, contacts the second semiconductor structure, and has a third shape. The third shape of the second contact structure is in contact with the transparent contact having the second shape and the first contact The matching relationship of a shape of the first contact structure provides a plurality of current paths from the first contact structure to the second contact structure. Similar path. 2. As for the element in the scope of patent application, the above transparent contact layer has at least a plurality of hollow patterns, the hollow patterns allow light to be directly emitted from the transparent contact, and make the current paths have a turning direction . 3. As for the element in the scope of claim 1, wherein the first shape mentioned above includes at least a first curved boundary.

第18頁 471190 六、申請專利範圍 4. 如申請專利範圍第3項之元件，其中上述之第二形狀至少包含一第二弧形邊界，該第二弧形邊界上之任一點至該第一弧形邊界的距離相等。 5. 如申請專利範圍第3項之元件，其中上述之第三形狀至少包含一第三弧形邊界，該第三弧形邊界上之任一點至該第一弧形邊界的距離相等。 6. 如申請專利範圍第1項之元件，其中上述之第一形狀至少包含一環形形狀，藉以使該透明接觸被圍繞於該環形形狀的該第一接觸結構内。 7. 如申請專利範圍第6項之元件，其中上述之第二接觸結構位於該透明接觸的中心，使得從該第二接觸結構至該環形形狀的第一接觸結構的該等電流路徑長度相近。 8. 如申請專利範圍第1項之元件，其中上述之第三接觸結構至少包含一環形形狀，該環形形狀的該第二接觸結構嵌入該透明接觸層之内部。 9. 如申請專利範圍第8項之元件，其中上述之第一接觸結構位於接近該環形形狀的該第二接觸結構中心正下方的位置，使得該等電流路徑長度相近。Page 18 471190 6. Application scope of patent 4. For the element of scope 3 of the application for patent, the above second shape includes at least a second curved boundary, and any point on the second curved boundary reaches the first The distances between the arc boundaries are equal. 5. As for the element in the scope of claim 3, wherein the third shape mentioned above includes at least a third curved boundary, the distance from any point on the third curved boundary to the first curved boundary is equal. 6. The element according to item 1 of the patent application scope, wherein the first shape mentioned above includes at least a ring shape, so that the transparent contact is enclosed in the first contact structure of the ring shape. 7. The element as claimed in claim 6 wherein the second contact structure is located at the center of the transparent contact so that the lengths of the current paths from the second contact structure to the ring-shaped first contact structure are similar. 8. The element according to item 1 of the patent application scope, wherein the third contact structure described above includes at least a ring shape, and the second contact structure of the ring shape is embedded in the transparent contact layer. 9. As for the element in the scope of claim 8, wherein the above-mentioned first contact structure is located directly below the center of the second contact structure of the annular shape, the current path lengths are similar.

第19頁 471190 六、申請專利範圍 1 0,如申請專利範圍第1項之元件，其中上述之第一形狀至少包含一第一線形形狀，該第一線形形狀的第一接觸結構位於該第一表面積的一第一側。 11.如申請專利範圍第1 0項之元件，其中上述之第二形狀至少具有一第二線形形狀，該第二線形形狀的第二接觸結構位於相對該第一側的一第二側位置，使得該等電流路徑長度相近。。 1 2.如申請專利範圍第1項之元件，其中上述之第一接觸結構與該第二接觸結構具有相反的導電性。 1 3 .如申請專利範圍第1項之元件，其中上述之第一半導體結構與該第一接觸結構具有相同的導電性。 1 4.如申請專利範圍第1項之元件，其中上述之第二半導體結構與該第二接觸結構具有相同的導電性。 1 5.如申請專利範圍第1項之元件，其中上述之基板的材質至少包括一絕緣藍寶石。 1 6 .如申請專利範圍第1項之元件，其中上述之基板的材質至少包括一導電底材，此時該元件在正常操作狀況上下垂Page 19, 471190 6. Application for a patent scope of 10, such as the element of the first patent scope, wherein the first shape mentioned above includes at least a first linear shape, and the first contact structure of the first linear shape is located on the first A first side of the surface area. 11. The component according to item 10 of the patent application scope, wherein the second shape has at least a second linear shape, and the second contact structure of the second linear shape is located at a second side position opposite to the first side, Make these current paths similar in length. . 1 2. The component according to item 1 of the patent application range, wherein the first contact structure and the second contact structure have opposite conductivity. 1 3. The device according to item 1 of the scope of patent application, wherein the first semiconductor structure mentioned above has the same conductivity as the first contact structure. 1 4. The device according to item 1 of the scope of patent application, wherein the second semiconductor structure mentioned above has the same conductivity as the second contact structure. 1 5. The component according to item 1 of the scope of patent application, wherein the material of the above substrate includes at least one insulating sapphire. 16. The component according to item 1 of the scope of patent application, wherein the material of the above substrate includes at least a conductive substrate, and at this time, the component sags under normal operating conditions.

第20頁 471190 六、申請專利範圍直方向上無法導通。 1 7.如申請專利範圍第1項之元件，其中上述之第一及第二半導體結構至少包含以Α1χ〇8γΙπ(ι+γ)Ν為組成的各自的遙晶層，其中OS XS 1及0$ Υ‘ 1。 1 8 .如申請專利範圍第1項之元件，其中上述之第一及第二半導體結構至少各自包含一單層結構。 1 9 .如申請專利範圍第1項之元件，其中上述之第一及第二半導體結構至少各自包含一多層結構。 2 0 .如申請專利範圍第1項之元件，其中上述之透明接觸層至少包括一氧化鎳/金層。 21.如申請專利範圍第1項之元件，其中上述之第一及第二接觸結構'至少各自包含一接觸層與一電極。 2 2.如申請專利範圍第1項之元件，其中上述之發光結構選自於下列族群中：均質接合、雙異質接合、單一量子井結構及多重量子井結構。 2 3.如申請專利範圍第1項之元件更包括一鈍化層覆蓋在該透明接觸結構上方及該第一接觸結構、及該第二接觸結構Page 20 471190 6. Scope of patent application Cannot be conducted in the straight direction. 1 7. The device according to item 1 of the scope of the patent application, wherein the first and second semiconductor structures described above include at least respective remote crystal layers composed of A1χ〇8γΙπ (ι + γ) N, in which OS XS 1 and 0 $ Υ '1. 18. The component according to item 1 of the scope of patent application, wherein each of the above-mentioned first and second semiconductor structures includes at least a single-layer structure. 19. The device according to item 1 of the scope of patent application, wherein the first and second semiconductor structures described above each include at least a multilayer structure. 20. The element according to item 1 of the patent application range, wherein the transparent contact layer described above includes at least a nickel oxide / gold layer. 21. The component according to item 1 of the scope of patent application, wherein each of the first and second contact structures' at least includes a contact layer and an electrode. 2 2. The element according to item 1 of the scope of patent application, wherein the above light emitting structure is selected from the following groups: homogeneous junction, double heterojunction, single quantum well structure and multiple quantum well structure. 2 3. The element according to item 1 of the patent application scope further includes a passivation layer covering the transparent contact structure, the first contact structure, and the second contact structure.

第21頁 471190 六、申請專利範圍的複數個側壁上。 2 4 .如申請專利範圍第2 3項之元件，其中上述的鈍化層選自於下列族群之一：氧化鋁、氧化矽、氮化矽、氧化钽、氧化鈦、氟石（calcium fluoride，CaFJ 、氧化铪（ h a f n i u m o x i d e，H f 0 2)、硫化鋅及氧化鋅。括少至件元體極二光發種板一基第 L# 構結體導半 1 第該上板基該於位構結體導半 ;份上部份二部第 1 1 第之一構之結構體結導體半導一半第 1 該第於該位 •，於構性位結電構觸導結接一光一第發第一〆一有具的離分；是性份電部導第第玄亥 =口=ΰ 與及份狀部形二一第第之一構有結具體構導結半觸一接第一該第，該上，體導半二·，第性該電，導上二構第結一光的發反該相於性位電構導結一體第導該半與二一第有一具構結具且觸並接，明構透結該體 ’導上半構二結第 ^月合導分半部二該第出該露於暴位以觸分接部明的透斷一切 - 有上分部的斷切的層觸接明透亥兮口於位及構 ;結狀觸形接二二第第一一有具 Φ 導透藉二的係第狀關該形的及三合狀第配形有相三具構第該結一與觸有狀接具形一並三第，第的構的狀結構形體結一導觸第半接有二二具第第該該該及到，觸觸性接接電明Page 21 471190 VI. A plurality of side walls covering the scope of patent application. 24. The element according to item 23 of the scope of patent application, wherein the passivation layer is selected from one of the following groups: alumina, silicon oxide, silicon nitride, tantalum oxide, titanium oxide, and fluorite (calcium fluoride, CaFJ). , Hafnium oxide (H f 0 2), zinc sulfide, and zinc oxide, including as few as the element body two light emitting seeding plate one base L # structure guide half 1 the upper plate base should be in situ Junction guide; half of the first part of the structure of the first part of the first structure of the first half of the structure of the junction conductor semiconducting half of the first at the bit •, at the structural position of the electrical structure of the conductive contact junction one light one first The first part has a separate part; it is the first part of the electrical part, the first part is Xuanhai = 口 = ΰ, and the second part is the first part. The first, the body leads half two, the nature of the electricity, the second structure of the first junction of the light is opposite to the phase of the electrical structure of the electrical junction, the first half of the half and the two one has a structure with And touched in parallel, the formation of the body The first half of the month and the second half of the joint guide should be exposed in the storm to touch everything.-There is a cut-off layer in the upper branch that touches the Ming Dynasty and the mouth; The knot-shaped contact shape is connected to the second one, the first one has the shape of Φ, the second shape is related to the shape, and the triplet shape is matched. And the third, the first, the first, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the second half, the first half, the second half, the second half, and the second half

第22頁 471190 六、申請專利範圍以提供從該第一接觸結構至該第二接觸結構的複數個電流路徑具有相近的路徑。 ’ 2 6.如申請專利範圍第2 5項之元件，其中上述之透明接觸層至少具有複數個中空圖案，該等中空圖案允許光線從該透明接觸直接射出，並且使該等電流路徑具有轉折的方向 2 7 .如申請專利範圍第2 5項之元件，其中上述之第一形狀至少包含一第一弧形邊界。 _ 2 8 .如申請專利範圍第2 7項之元件，其中上述之第二形狀至少包含一第二弧形邊界，該第二弧形邊界上之任一點至該第一弧形邊界的距離相等。 2 9 .如申請專利範圍第2 7項之元件，其中上述之第三形狀至少包含一第三弧形邊界，該第三弧形邊界上之任一點至該第一弧形邊界的距離相等。 . 3 0 .如申請專利範圍第2 5項之元件，其中上述之第一形狀 $ 至少包含一環形形狀，藉以使該透明接觸被圍繞於該環形形狀的該第一接觸結構内。 3 1.如申請專利範圍第2 5項之元件，其中上述之第二接觸Page 22 471190 6. Scope of patent application to provide a plurality of current paths from the first contact structure to the second contact structure with similar paths. '2 6. The element according to item 25 of the scope of patent application, wherein the above-mentioned transparent contact layer has at least a plurality of hollow patterns, the hollow patterns allow light to be directly emitted from the transparent contact, and make the current paths have a turning Direction 27. The element according to item 25 of the patent application scope, wherein the first shape mentioned above includes at least a first curved boundary. _ 28. If the element of the scope of patent application No. 27, wherein the second shape includes at least a second curved boundary, the distance from any point on the second curved boundary to the first curved boundary is equal . 29. The component according to item 27 of the scope of patent application, wherein the third shape described above includes at least a third curved boundary, and any point on the third curved boundary is equal to the first curved boundary. 30. The element according to item 25 of the scope of patent application, wherein the first shape $ includes at least a ring shape, so that the transparent contact is enclosed in the first contact structure of the ring shape. 3 1. The element as claimed in item 25 of the patent application scope, wherein the second contact mentioned above

第23頁 471190 六、申請專利範圍結構位於該透明接觸的中心，使得從該第二接觸結構至該環形形狀的第一接觸結構的該等電流路徑長度相近。 3 2 .如申請專利範圍第2 5項之元件，其中上述之第三接觸結構至少包含一環形形狀，該環形形狀的該第二接觸結構嵌入該透明接觸層之内部。 3 3 .如申請專利範圍第3 2項之元件，其中上述之第一接觸結構位於接近該環形形狀的該第二接觸結構中心正下方的位置，使得該等電流路徑長度相近。 3 4 .如申請專利範圍第2 5項之元件，其中上述之第一形狀至少包含一第一線形形狀，該第一線形形狀的第一接觸結構位於該第一表面積的一第一側。 3 5 .如申請專利範圍第3 4項之元件，其中上述之第二形狀至少具有一第二線形形狀，該第二線形形狀的第二接觸結構位於相對該第一側的一第二側位置，使得該等電流路徑長度相近。。 — 3 6 .如申請專利範圍第2 5項之元件，其中上述之基板的材質至少包括一絕緣藍寶石。 3 7.如申請專利範圍第2 5項之元件，其中上述之基板的材Page 23 471190 6. Scope of patent application The structure is located at the center of the transparent contact, so that the lengths of the current paths from the second contact structure to the first contact structure of the ring shape are similar. 32. The element according to item 25 of the patent application scope, wherein the third contact structure includes at least a ring shape, and the second contact structure of the ring shape is embedded in the transparent contact layer. 33. The component according to item 32 of the scope of patent application, wherein the first contact structure is located directly below the center of the ring-shaped second contact structure, so that the current path lengths are similar. 34. The element according to item 25 of the patent application range, wherein the first shape mentioned above includes at least a first linear shape, and the first contact structure of the first linear shape is located on a first side of the first surface area. 35. The element according to item 34 of the scope of patent application, wherein the second shape has at least a second linear shape, and the second contact structure of the second linear shape is located on a second side opposite to the first side. So that the lengths of these current paths are similar. . — 36. The component according to item 25 of the patent application scope, wherein the material of the above substrate includes at least one insulating sapphire. 37 7. The element according to item 25 of the scope of patent application, wherein the material of the above substrate is

第24頁 471190 六、申請專利範圍質至少包括一導電底材，此時該元件在正常操作狀況上下垂直方向上無法導通。 3 8.如申請專利範圍第2 5項之元件，其中上述之第一及第二半導體結構至少包含以AlxGaYln〇-x-Y)N為組成的各自的蠢晶層，其中OS 1及〇‘ YS 1。 3 9.如申請專利範圍第2 5項之元件，其中上述之第一及第二半導體結構至少各自包含一單層結構。 α 4 0 .如申請專利範圍第2 5項之元件，其中上述之第一及第二半導體結構至少各自包含一多層結構。 4 1.如申請專利範圍第2 5項之元件，其中上述之透明接觸層至少包括一氧化鎮/金層。 4 2 .如申請專利範圍第2 5項之元件，其中上述之第一及第二接觸結構至少各自包含一接觸層與一電極。 4 3.如申請專利範圍第2 5項之元件，其中上述之發光結構 ‘ 選自於下列族群中：均質接合、雙異質接合、單一量子井結構及多重量子井結構。 4 4.如申請專利範圍第25項之元件更包括一鈍化層覆蓋在Page 24 471190 VI. Scope of patent application The quality shall include at least one conductive substrate. At this time, the component cannot be conducted vertically under normal operating conditions. 3 8. The device according to item 25 of the scope of patent application, wherein the above-mentioned first and second semiconductor structures include at least respective stupid crystal layers composed of AlxGaYln0-xY) N, wherein OS 1 and 0 ′ YS 1 . 39. The device according to item 25 of the scope of patent application, wherein the first and second semiconductor structures described above each include at least a single-layer structure. α 4 0. The element according to item 25 of the patent application range, wherein the first and second semiconductor structures described above each include at least a multilayer structure. 4 1. The element according to item 25 of the patent application scope, wherein the transparent contact layer includes at least an oxide town / gold layer. 4 2. The component according to item 25 of the scope of patent application, wherein the first and second contact structures described above each include at least a contact layer and an electrode. 4 3. The element according to item 25 of the scope of patent application, wherein the above-mentioned light emitting structure ′ is selected from the following groups: homogeneous junction, double heterojunction, single quantum well structure, and multiple quantum well structure. 4 4. If the element in the scope of patent application No. 25 further includes a passivation layer covering

第25頁 471190 六、申請專利範圍該透明接觸結構上方及該第一接觸結構、及該第二接觸結構的複數個側壁上。 4 5 .如申請專利範圍第4 4項之元件，其中上述的鈍化層選自於下列族群之一：氧化鋁、氧化矽、氮化矽、氧化鉅、氧化鈦、氟石（calcium fluoride，CaFJ 、氧化給（ h a f n i u m o x i d e，Η ί 0 2)、硫化鋅及氧化鋅。Page 25 471190 6. Scope of patent application Above the transparent contact structure, on the first contact structure, and on the plurality of side walls of the second contact structure. 4 5. The element according to item 44 of the scope of patent application, wherein the passivation layer is selected from one of the following groups: alumina, silicon oxide, silicon nitride, oxide, titanium oxide, and calcium fluoride (CaFJ , Oxidation (hafniumoxide, Η 0 2), zinc sulfide and zinc oxide.