TW471190B - LED having current-spreading and increased utility of light emitting area - Google Patents
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471190 五、發明說明(1) 5 - 1發明領域: 本發明係有關於一種發光二極體元件,特別是一種可 同時分散電流及提高發光面積利用率的發光二極體。 5 - 2發明背景: 對於光半導體元件而言,發光二極體(LED)可能是最 被人所熟知的,因為它應用在各式各樣的產品上,例如科 學儀器、醫療儀器,最常見的,是使用在消費性產品上, 這些發光二極體可作為各種訊號、指示器、測量儀器、量 錶的光源。如發光二極體的半導體光源之所以如此被大量 作為光源輸出元件,主要是因為它們通常有很長的使用壽 命、低耗能及高可信賴度。 自從1 9 7 0年代早期開始,以氮化鎵為基本的材質便因 為其寬廣的帶隙特性而引起發光器應用的高度注意。另一 方面,絕緣及晶格錯置的基板,例如藍寶石(s a p p h i r e, 三氧化二鋁aluminum oxide, Al2〇 3),因其具有熱穩定及 透光度特性,且因目前仍無晶格匹配之基板,故被廣泛應 用於第三族氮化物磊晶的基板。在美國專利4 1 5 3 9 0 5中已 提出,在藍寶石基板上長出氮化鎵為基本的發光二極體結 構,並在其η及p型層上做相對應之歐姆接觸,以完成平面471190 V. Description of the invention (1) 5-1 Field of the invention: The present invention relates to a light-emitting diode element, particularly a light-emitting diode that can simultaneously disperse current and improve the utilization of light-emitting area. 5-2 Background of the Invention: For optical semiconductor devices, light-emitting diodes (LEDs) are probably the most well-known because they are used in a wide variety of products, such as scientific instruments, medical instruments, and the most common It is used in consumer products. These light-emitting diodes can be used as light sources for various signals, indicators, measuring instruments, and meters. Semiconductor light sources such as light-emitting diodes are so widely used as light source output components mainly because they usually have a long service life, low energy consumption, and high reliability. Since the early 1970s, gallium nitride-based materials have attracted much attention in light emitter applications due to their wide band gap characteristics. On the other hand, substrates with insulation and lattice misalignment, such as sapphire (aluminum oxide, Al203), are thermally stable and transparent, and there is currently no lattice matching. Substrate, so it is widely used as the substrate for Group III nitride epitaxy. It has been proposed in U.S. Patent No. 41,593,05 that a gallium nitride-based light emitting diode structure is grown on a sapphire substrate, and corresponding ohmic contacts are made on its η and p-type layers to complete flat
471190 五、發明說明(2) 式的LED結構。然而,要形成p型高導電性的氮化鎵層仍是 很困難的事’·因此,在p型氮化鎵上之歐姆接觸較不易製 造’且p型層之電流也較不易散開。 、敢近’ Akasaki et al·及 Nakamura et al·已經提出 改善p型氮化鎵導電性的方法。然而,p型氮化鎵導電性還 是落於η型氮化鎵之後。結果,也許最常見到的,p型氮化 鎵被置於以氮化鎵為基本之發光二極體結構的最頂部1而 Ρ型層上的透明接觸電極(c 0 n t a c t)便成為一較佳元件設計 所不可或缺的。對於發光體表面最大的利用效率而言,n 型與P型接觸結構被盡可能安排在最寬遠的位置,即一元 件相反的角落上。 弟 圖中顯示為一傳統氮化錄為基材之發光二極體的 正視圖。一 ρ型透明電極1 1 5中有一切斷的部分1 1 7,以利 於暴露出部分的ρ型半導體層113。一打線用墊(b〇nding pad) 11 6透過切斷的部分117緊緊黏在ρ型半導體層113上, 並且和ρ型透明電極11 5有電性上的連接。此切斷的部分 1 1 7從打線用墊Π 6處與n型半導體層π 2上所提供的n型電 極1 1 4被安排於最遠的角落位置上。但是這樣的接觸安排 會有電流在電極間壅塞(current crowd i ng )的缺點。結果 導致發光表面無法有效率的利用,且更有可能的,元件及 透明接觸電極的壽命會因為電流壅塞而縮短。471190 V. Description of the invention (2) LED structure. However, it is still difficult to form a p-type high-conductivity gallium nitride layer '. Therefore, an ohmic contact on the p-type gallium nitride is harder to make' and the current of the p-type layer is also less likely to spread. Dare to approach ’Akasaki et al. And Nakamura et al. Have proposed methods to improve the conductivity of p-type gallium nitride. However, the conductivity of p-type GaN is still behind that of n-type GaN. As a result, perhaps the most common, p-type gallium nitride is placed on the topmost 1 of a light-emitting diode structure based on gallium nitride and the transparent contact electrode (c 0 ntact) on the p-type layer becomes a comparative Indispensable for good component design. For the maximum utilization efficiency of the surface of the luminous body, the n-type and p-type contact structures are arranged as far as possible at the widest position, that is, the corner of the opposite element. The figure shows a front view of a light-emitting diode with a conventional nitrided substrate. A p-type transparent electrode 1 15 has a cut-off portion 1 1 7 to facilitate exposing a part of the p-type semiconductor layer 113. A bonding pad 116 is tightly adhered to the p-type semiconductor layer 113 through the cut portion 117, and is electrically connected to the p-type transparent electrode 115. The cut portion 1 1 7 is arranged at the furthest corner position from the n-type electrode 1 1 4 provided on the wiring pad Π 6 and the n-type semiconductor layer π 2. However, such a contact arrangement has the disadvantage of current crowding between the electrodes. As a result, the light-emitting surface cannot be used efficiently, and it is more likely that the life of the element and the transparent contact electrode will be shortened by current congestion.
4 五、發明說明(3) 5 - 3發明目的及概述: 鑒於上述之發明背景中,本發明之主要目 一分散電流與提高發光面積利用率的發光二極 透明接觸結構上挖空的中空圖案來阻絕電流的 徑,達到分散電流的目的,同時增加發光面積 本發明之另一目的在於提供一避免電流麥 極體;利用設計接觸電極的幾何形狀及相對位 電極間的電流路徑長度相近。 本發明之再一目的在於提供一降低表面狀 的發光二極體,利用一保護層降低表面狀態( state)的數目及降低漏電流的情形。 根據以上所述之目的,本發明提供一種光 至少包括一基板;一第一半導體結構位於基板 結構位於第一半導體結構之一第一部份上;一 構位於第一半導體結構之一第二部份上,第一 之第二部份與第一部份是分離的,第一接觸結 一形狀;一第二半導體結構位於發光結構上; 位於第二半導體結構上,透明接觸具有一切斷 露出部分的第二半導體結構,並且具有一第二 的在於提供 體;利用在 直線捷徑路 的使用率。 塞的發光二 置使得接觸 丨p 態及漏電流 surface 半導體元件 上;一發光 第一接觸結 半導體結構 φ 構具有一第 一透明接觸 的部分以暴 形狀;及一4 V. Description of the invention (3) 5-3 Purpose and summary of the invention: In view of the above background of the invention, the main purpose of the present invention is to dispense current and hollow out the hollow pattern on the light-emitting diode transparent contact structure that improves the utilization of the light-emitting area. The purpose of the present invention is to block the diameter of the current, to achieve the purpose of dispersing the current, and to increase the light-emitting area. Another object of the present invention is to provide a current-avoiding microphone; the geometry of the design contact electrode and the length of the current path between the opposing electrodes are similar. Yet another object of the present invention is to provide a light-emitting diode with a reduced surface shape, a protective layer to reduce the number of surface states and a reduction in leakage current. According to the above-mentioned object, the present invention provides a light including at least a substrate; a first semiconductor structure on a substrate structure on a first portion of a first semiconductor structure; and a structure on a second portion of a first semiconductor structure In part, the first and second parts are separated from the first part, and the first contact junction has a shape; a second semiconductor structure is located on the light emitting structure; the second contact structure is located on the second semiconductor structure, and the transparent contact has a cut-off exposed portion It has a second semiconductor structure, and has a second lie in the provider; using the utilization rate of the straight shortcut. The light emitting element of the plug is placed on the semiconductor element in contact with the p-state and the leakage current; a light emitting first contact junction semiconductor structure φ structure has a first transparent contact portion in a violent shape; and
第7頁 471190 五、發明說明(4) 第三接接 到第一二 觸的第第 接構的至 ,結狀構 上觸形結 分接一觸。 部二第接徑 的第有一路 斷,具第的 切狀及從近 的形觸供相 層三接提有 觸第明以具 接一透藉徑 明有的,路 透具狀係流 於並形關電 位,二的個 構構第合數 結結有配複 觸體具相的 接導與構構 二半狀結結 第二形觸觸 5 - 4發明詳細說明: 本發明用示意圖詳細描述如下,在詳述本發明實施例 時’表不半導體結構的剖面圖在半導體製程中會不依一般 比例作局部放大以利說明,然不應以此作為有限定的認知 。此外,在實際的製作中,應包含長度、寬度及深度的三 維空間尺寸。 在本較佳實施例中,以GaN為基本的元件來證明;無 論如何,本發明不應被侷限於這些材質中。所謂的以GaN 為基本的材質意指由A1 xGaYIn(1_x_Y)N材質製作的,其中X與Y 介於0與1之間。而所謂以GaN為基本的LED指的是一具有較 窄能隙的GaN為基本的發光結構介於具有較寬能隙的GaN為 基本結構之單層或多層之間,在發光結構的不同側具有不 同的導電型態。此外,本發明除可用於發光二極體長在一 絕緣基板上之外,也可以應用在發光二極體長在其他基板 ,但垂直方向上無法導通的結構,例如GaAs、GaP、S i及Page 7 471190 V. Description of the invention (4) The third connection to the first connection of the first connection, the contact structure of the knot-shaped structure is tapped and touched. The first path of the second part of the path is cut, with the first cut shape and the near-shaped contact layer. The third part is touched by the first part of the path, and the second path is connected by the path. The shape of the potential, the second composite number of the two structures has a contact with a complex contact body and the second half of the structure of the second half of the structure. Detailed description of the invention: The present invention is described in detail with a schematic diagram as follows, In the detailed description of the embodiments of the present invention, the cross-sectional view showing the semiconductor structure will not be partially enlarged according to the general scale in the semiconductor manufacturing process to facilitate explanation, but it should not be used as a limited recognition. In addition, in actual production, three-dimensional space dimensions of length, width and depth should be included. In this preferred embodiment, GaN is used as a basic element for proof; however, the present invention should not be limited to these materials. The so-called GaN-based material means that it is made of A1 xGaYIn (1_x_Y) N material, where X and Y are between 0 and 1. The so-called GaN-based LED refers to a GaN-based light-emitting structure with a narrow energy gap between single or multiple layers of a GaN-based structure with a wide energy gap. On different sides of the light-emitting structure Has different conductivity types. In addition, the present invention can be applied to a structure where the light emitting diode is grown on an insulating substrate, but also can be used in a structure where the light emitting diode is grown on another substrate, but cannot be conducted in a vertical direction, such as GaAs, GaP, Si, and
471190 五、發明說明(5)471190 V. Description of the invention (5)
SiC。 本發明以元件的幾何形狀及接觸形式的改進來改善電 流分散的方法。在這些實施例中,一透光且導電的歐姆接 觸層置於元件導電性較小一側的頂部;所有的接觸層都被 精心設計用以減少電流壅塞、加大發光面積及進而增加 LED的效率及使用壽命。本發明的詳細說明如下;無論如 何,本發明不應被侷限於如下的實施例中。 如第二圖及第三圖所示分別為本發明的剖面及正視示 意圖。一 η型氮化鎵結構1 2形成於一絕緣基板1 1,例如藍 寶石基板上。在η型氮化鎵結構1 2上為一發光結構1 3,接 著形成一 Ρ型氮化鎵結構1 4。η型及ρ型氮化鎵皆可以為氮 化鎵單層、氮化鎵與氮化鋁多層結構,或結合其他組合的 多層結構。發光結構可以為均質(h 〇 m 〇 g e η 〇 u s ) ρ - η接合、 雙異質接合 (hetero -junction)、單一量子井結構、或多 重量子井結構。一較佳元件結構包括在藍寶石基板11上的 單層η型氮化鎵、一 InGaN/GaN多重量子井發光層,及 AlGaN/GaN ρ型層;這樣的半導體發光二極體是依如此的 安排蠢晶形成的。 接著,此磊晶晶圓要進行元件製程,其包括以平頂蝕 刻(m e s a e t c h i n g )、金屬化及熱處理製程定義晶粒。金屬 化完成一透明接觸電極1 5、許多的中空圖案1 6、ρ型接觸SiC. The invention improves the current dispersion by improving the geometry and contact form of the element. In these embodiments, a light-transmitting and conductive ohmic contact layer is placed on top of the less conductive side of the element; all contact layers are carefully designed to reduce current congestion, increase the light-emitting area and further increase the LED Efficiency and service life. The detailed description of the present invention is as follows; however, the present invention should not be limited to the following examples. As shown in the second and third figures, the sectional and front views of the present invention are shown. An n-type GaN structure 12 is formed on an insulating substrate 11 such as a sapphire substrate. A light emitting structure 13 is formed on the n-type gallium nitride structure 12, and a p-type gallium nitride structure 14 is formed next. Both n-type and p-type gallium nitride can be a single layer of gallium nitride, a multilayer structure of gallium nitride and aluminum nitride, or a combination of other multilayer structures. The light emitting structure may be a homogeneous (h 0 m 0 g e η 〇 us) ρ-η junction, a hetero-junction, a single quantum well structure, or a multi-bionron well structure. A preferred device structure includes a single layer of n-type gallium nitride on the sapphire substrate 11, an InGaN / GaN multiple quantum well light-emitting layer, and an AlGaN / GaN p-type layer; such a semiconductor light-emitting diode is arranged as such Stupid crystals formed. Next, the epitaxial wafer is subjected to a component process, which includes defining a die by a flat top etch (me s a e t c h i n g), metallization, and heat treatment processes. Metallization completes a transparent contact electrode 15, many hollow patterns 16 and p-type contacts
471190 五、發明說明(6) 結構(包括導電電極與接觸層)1 7,及η型歐姆接觸結構18 。再者,熱處理製程則是完成透明接觸電極1 5的氧化,及 Ρ型接觸結構1 7與η型歐姆接觸結構1 8的回火。就正視圖來 看,Ρ型接觸結構1 7與η型歐姆接觸結構1 8是分離的,也就 是在垂直方向上沒有上下重疊的部分。特別要強調的是, 透明接觸電極1 5的材質是氧化鎳/金、氧化鎂、氧化鋅或 是五氧化二釩,在較佳實施例中,透明電極材料為氧化鎳 /金。 上述的中空圖案1 6 (窗口)是本發明的關鍵,他們可以 具有多折路徑的功能。第一,中空圖案1 6可以阻斷電流以 捷徑通過;第二,假如它們被準確地設計時,在最長與最 短的電流路徑之間,它們扮演平衡差異的功能。事實上, 透明接觸電極1 5不是百分之百透光,因此設計中空圖案1 6 來提供光線從元件的耦合處直接射出,而沒有透明接觸電 極阻擋的路徑,所以,如此元件的發光效率可藉由中空圖 案1 6來提昇,同時具有良好的電流分散性。 再者,中空圖案1 6的形狀、數目及位置並不局限於實 施例中所提到的。它可以,也應該為各種元件及電流等級 作最佳化的設計。特別的是,當Ρ及η型接觸結構被安排在 相反一側時,本發明能發揮最大的效率。參照第四圖,也 是一個正視圖,為本發明的另一實施例,應用到方形形狀 的LED晶片,其中ρ型接觸結構1 7,及η型歐姆接觸結構1 8471190 V. Description of the invention (6) Structure (including conductive electrode and contact layer) 1 7 and n-type ohmic contact structure 18. Furthermore, the heat treatment process is to complete the oxidation of the transparent contact electrode 15 and the tempering of the P-type contact structure 17 and the n-type ohmic contact structure 18. From the front view, the P-type contact structure 17 and the n-type ohmic contact structure 18 are separated, that is, there is no vertical overlapping portion in the vertical direction. It is particularly emphasized that the material of the transparent contact electrode 15 is nickel oxide / gold, magnesium oxide, zinc oxide or vanadium pentoxide. In a preferred embodiment, the transparent electrode material is nickel oxide / gold. The above-mentioned hollow patterns 16 (windows) are the key of the present invention, and they can have the function of multi-folded paths. First, the hollow patterns 16 can block currents from passing through shortcuts. Second, if they are accurately designed, they play the role of balancing differences between the longest and shortest current paths. In fact, the transparent contact electrode 15 is not 100% transparent, so the hollow pattern 16 is designed to provide direct light emission from the coupling of the element without the path blocked by the transparent contact electrode. Therefore, the luminous efficiency of such a component can be achieved by hollow The pattern 16 is improved while having good current dispersibility. Furthermore, the shape, number, and position of the hollow patterns 16 are not limited to those mentioned in the embodiments. It can and should be optimized for various components and current levels. In particular, when the P and n-type contact structures are arranged on opposite sides, the present invention can exert the maximum efficiency. Referring to the fourth figure, it is also a front view, which is another embodiment of the present invention, which is applied to a square-shaped LED chip, wherein the p-type contact structure 17 and the n-type ohmic contact structure 18
第10頁 471190 五、發明說明(7) 被安排在方形相反的一側 另 現。表 流,如 的。無 射波長 並且, ,例如 鋅、氟 oxide, 應用到 從 案,其 —利用 根據本 上如有 接觸間 流會造 走捷徑 一方面,藉由減少表面狀態可進一步改進元件的表 面狀態可利用一保護層1 9覆蓋在元件上以降低漏電 第五圖所不。有許多的材質都可達到表面保護的目 論如何,對發光體而言,表層應該使得發射光在發 範圍有高度的光學傳送(optical transmission), 此保護層的性質是絕緣的或是高阻抗的。這些材質 氧化鋁 '氧化矽、氮化矽、氧化鈕、氧化鈦、硫化 石(calcium f1u n ^, ^ —Page 10 471190 V. Description of the invention (7) Arranged on the opposite side of the square. Table streams, such as. Non-radiation wavelength, and, such as zinc, fluorine oxide, are applied to the case, which-using shortcuts in accordance with the current will create shortcuts. On the one hand, by reducing the surface state can further improve the surface state of the component can be used- The protective layer 19 covers the element to reduce leakage current. There are many materials that can achieve the objective of surface protection. For the luminous body, the surface layer should make the emitted light have a high optical transmission in the emission range. The nature of this protective layer is insulating or high impedance. of. These materials are aluminum oxide, silicon oxide, silicon nitride, oxide button, titanium oxide, and sulfide (calcium f1u n ^, ^ —
Hfn w ^ , ^ lde,CaF 2)、氧化铪(hafnium H f 0 2)及氧化鋅等可炫人 本發明任-實施例中付二要求。此保護層是可以 後々不再重複強調及提及。 弟一至第四圖的實施例英番认 中空圖案迫使電流更均勾的散:阻:f流的:空圖 幾何形狀來達到分散電流的二:’將介紹另 發明在幾何形狀上的改進的τ的。如弟六圖所示為 被精確設計的平頂(mesa)及接;U圖。元件結構 的最短距離可保持相同。如,、、°構,如此可使得 成接觸(或接觸墊)間的電流=傳統LED中的電 路徑。結果,曰曰曰片上大部分^,所以電子會傾向 勺面積無法有效被利用 在第二 個實施例中,透明接觸電 極2 5、p型接觸結構Hfn w ^, ^ lde, CaF 2), hafnium oxide (hafnium H f 0 2), zinc oxide and the like can be dazzling. This protective layer can be repeated without further emphasis and reference. The first to fourth embodiments of the first to fourth figures recognize that the hollow pattern forces the current to be more evenly dispersed: resistance: f flow: empty figure geometry to achieve the current dispersion: two will be introduced to improve the geometric shape of another invention τ's. Figure 6 shows the flat top (mesa) and connection; The shortest distance of the component structure can be kept the same. Such as, ,, and so on, so that the current between contacts (or contact pads) = the electrical path in traditional LEDs. As a result, most of the chips are on the chip, so the electrons tend to be used. The area cannot be effectively used. In the second embodiment, the transparent contact electrode 25, p-type contact structure
第11頁 4/iiyu 五、發明說明(8)Page 11 4 / iiyu V. Description of Invention (8)
27及η型接觸結構28在〜M 的安排使得p型接觸結構27 a結構22之上。它們被如此 最短距離,均維持相同\1上任一點至η型接觸結構28間的 27有一四分之一圓的形壯特別要強調的是,Ρ型接觸結構 狀,其與ρ型接觸結構27且而透明接觸電極25為一扇形形 過透明接觸電極25從_ 緒=同的圓心'。也就是說’透 構28的放射狀距離皆相同。,.Ό構2 7散開電流至η型接觸結 32上安排另一 Ξ ί ΐ與結構33上的平頂(mesa)結構 構38及透明接觸電極35。的P型接觸結構37、η型接觸結 3 7與η型接觸結構3 8被安 '別要說明的是,Ρ型接觸結構 。也就是說,ρ型接觸結:反面’而不是相反的角落 維方向上展開。這樣的形斑接觸結構38的形狀在二 與η型接觸結構38間建立相非可以在Ρ型接觸結構37 J長度的電流路徑。 接著,利用較對稱的接觸 積的更有效利用進行改進,2電流的分散及發光面 述實施例是相同的,但平頂鱼觸:所不,磊晶結構與上 實施例中,環狀η型接觸社構、的形狀是不同的。在此 4 9沾μ 士· 〇冓48位在元件的周圍且在η型 觸/柽4 s ,而兩者皆位於平頂的底部。一 Ρ型透明接The arrangement of 27 and n-type contact structure 28 at ~ M makes p-type contact structure 27 a structure 22 a. They are kept at such a shortest distance, and they maintain the same shape from any point on the \ 1 to the η-type contact structure 28. A quarter-circle shape is particularly emphasized. The P-type contact structure is similar to the ρ-type contact structure. 27, and the transparent contact electrode 25 is a fan-shaped over transparent contact electrode 25 from the same circle center. In other words, the radial distances of the 'transparent structures 28 are the same. The structure 27 disperses the current to the n-type contact junction 32 and arranges another structure ί and the flat mesa structure 38 and the transparent contact electrode 35 on the structure 33. The P-type contact structure 37, the n-type contact junction 37, and the n-type contact structure 38 are installed. 'It should be noted that the P-type contact structure. That is, the p-type contact knot: the opposite side 'is spread in the opposite corner dimension direction. The shape of the spot-shaped contact structure 38 establishes a current path between the second and n-type contact structures 38, which can be a length of 37 J in the P-type contact structure. Next, the use of a more symmetrical contact product is used for improvement. The current dispersion and luminescence are the same in the embodiment described above, but the flat-topped fish touch: No, the epitaxial structure is the same as in the previous embodiment. The shape of the contact organization is different. In this case, 49 μμ · 48 is located around the element and is in the n-type contact / 柽 4 s, and both are located at the bottom of the flat top. A P-type transparent connection
觸电極45位於P型GaN層44的 > 古 Q 的頂部。A 了八#帝、、= 且口型6以層44位於平頂 Φ 、式:刀月電,政,P型接觸結構4 7的位置在平頂的 或接近中心的位置’且n型接觸結構48具有接觸墊及The contact electrode 45 is located on top of > Q of the P-type GaN layer 44. A 了 八 # 帝 、、 = and the mouth shape 6 is located on the flat top with layer 44 Φ, type: knife and moon electricity, government, P-type contact structure 4 7 The position is on the flat top or near the center 'and the n-type contact Structure 48 has contact pads and
第12頁 471190 五、發明說明(9) 導電環。相同的,兩種接觸(47and48)的形狀及位置安排 可以確保所有在接觸間的電流距離在平頂中是相等或近乎 相等的;因而元件可以表現出良好的電流分散及高面積使 用效率。特別要說明的是,p型接觸結構4 7的形狀並不侷 限於第八圖中所示;對於1 4 * 1 4密爾(m i 1 )或是更小面積的 晶片而言,接觸的形狀可以簡單些,例如圓形、方形含或 不含延伸之指狀設計等等。當然,如此的設計也可應用到 以下的實施例中。 接著為另外一實施例,第九圖顯示其正視圖,第十圖 為其剖面示意圖。因為η型材質具有較佳的導電性及良好 的載子漂移率,所以此實施例將應用到η型材質的電流分 散能力。一 η型接觸結構5 8被安放在反轉平頂(或井)結構 的中心或近中心位置。一 ρ型透明接觸電極5 5覆蓋在元件 的其他表面上,如此可將發光面積的效率最大化。電流分 散可因環狀Ρ型接觸結構5 7增強。在本較佳實施例中,ρ型 透明接觸電極的面積大於第八圖中Ρ型透明接觸電極4 5, 如此可提供一更大的可利用的發光面積。在此要強調的是 ,第九圖之實施例與上述其他實施例的磊晶結構仍是相同 的,那些磊晶層,包括η型GaN結構52、 發光結構53及ρ型 GaN結構54和第二圖中的材質相同;而接觸的材質,例如 透明接觸電極5 5、η型接觸結構5 8與ρ型接觸結構5 7,也和 第二圖中的材質相同。根據這些元件設計,電流可以以較 低的接觸電阻進行電流分散,進而延長透明接觸電極的使Page 12 471190 V. Description of the invention (9) Conductive ring. Similarly, the shape and position arrangement of the two contacts (47and48) can ensure that all the current distances between the contacts are equal or nearly equal in the flat top; therefore, the component can exhibit good current dispersion and high area use efficiency. In particular, the shape of the p-type contact structure 47 is not limited to that shown in the eighth figure; for a wafer of 1 4 * 1 4 mil (mi 1) or a smaller area, the shape of the contact It can be simple, such as round, square design with or without extended fingers. Of course, such a design can also be applied to the following embodiments. Next is another embodiment. The ninth figure shows a front view, and the tenth figure shows a schematic sectional view. Since the η-type material has better conductivity and a good carrier drift rate, this embodiment will be applied to the current-dispersing ability of the η-type material. A n-type contact structure 58 is placed at the center or near the center of the inverted flat-top (or well) structure. A p-type transparent contact electrode 55 covers the other surfaces of the element, so that the efficiency of the light emitting area can be maximized. Current dispersion can be enhanced by the ring-shaped P-type contact structure 57. In the preferred embodiment, the area of the p-type transparent contact electrode is larger than that of the P-type transparent contact electrode 45 in the eighth figure, so that a larger available light-emitting area can be provided. It should be emphasized that the embodiment of the ninth figure is still the same as the epitaxial structure of the other embodiments described above. Those epitaxial layers include the n-type GaN structure 52, the light-emitting structure 53 and the p-type GaN structure 54 and the first embodiment. The materials in the two figures are the same; and the materials of the contacts, such as the transparent contact electrodes 55, the n-type contact structure 5 8 and the p-type contact structure 57, are also the same as those in the second figure. According to the design of these components, the current can be dispersed with a lower contact resistance, thereby extending the use of the transparent contact electrode.
第13頁 五、發明說明(10) 一 ---- 用壽命。 本發明提供一種發光二極體元件至少一 第-半導體結構位於基板上;—發光結 ::導體 2構之:第—部份上;—第—接觸結構位於::半以 :t:ί:部份上,第一半導體結構之第二部份盘第-; 饬疋分離的,弟一接觸結構具有—第一形一 體結構位於發光結構上;一透明 ,弟一丰ν 上,透明接觸具有一切斷的第二半導體結構 體結構,並且具有一第二形狀。的第二半導 明接觸層的切斷的部分±,接觸到第二;巧=位於透 有-弟二形狀,第二接觸結構的第三 ::具 ,藉以提供從第—接觸結構 :::相配合的關係 路徑具有相近的路^ ㈣結構的複數個電流 以上所述之實施例僅為本發明之 便說明本發明之技術,並非 :、靶例,提供方 他未脫離本發明所揭示之 =$ ^明之範圍,凡其 ,均應包含在本發明之Ϊ 元成之等效變更或修飾Page 13 V. Description of the invention (10) a ---- Use life. The present invention provides a light-emitting diode element on which at least one of the first semiconductor structure is located on the substrate; the light-emitting junction: the conductor 2 is formed on the first portion; the first contact structure is located on the half-tipped: t: ί: In part, the second part of the first semiconductor structure is discontinued; 饬 疋 separated, the first contact structure has-the first integrated structure is located on the light-emitting structure; a transparent, the first contact ν, the transparent contact has A severed second semiconductor structure has a second shape. The cut-off part of the second semi-conductive contact layer ±, comes into contact with the second; Qiao = is located in the shape of the transparent-second, the third of the second contact structure: with, so as to provide from the first-contact structure :: : The matching relationship paths have similar paths ^ The structure of the plurality of currents The embodiments described above are only for the purpose of the present invention and will explain the technology of the present invention, and are not: Targets, the provider does not depart from the disclosure of the present invention The scope of == ^ Ming, all of which should be included in the equivalent changes or modifications of the present invention
第14頁 471190 圖式簡單說明 第一圖為先期文獻氮化鎵發光二極體的正視示意圖; 第二圖為本發明之發光二極體的剖面示意圖,包含在 透明接觸電極上具有中空圖案; 第三圖至第四圖為本發明由AA’切開的第二圖之發光 二極體的正視示意圖,說明本發明兩接觸結構的幾何形狀 及相對位置; 第五圖為本發明之發光二極體的另一剖面示意圖,說 明覆蓋一保護層以提昇元件的可靠度; 第六圖至第八圖為本發明之發光二極體的另一系列的 正視示意圖,說明本發明兩接觸結構的幾何形狀及相對位 置; 第九圖為本發明之發光二極體的另一系列的正視示意 圖,說明η型接觸結構置於中間的方式;及 第十圖為第九圖實施例的剖面示意圖,說明η型接觸 結構置於中間的方式。 主要符號說明 11 絕緣基板Page 471190 Brief description of the drawings The first picture is a schematic front view of a gallium nitride light emitting diode from an earlier document; the second picture is a schematic cross-sectional view of a light emitting diode of the present invention, which includes a hollow pattern on a transparent contact electrode; The third to fourth figures are schematic front views of the light-emitting diode of the second figure cut by AA ′ according to the present invention, illustrating the geometry and relative positions of the two contact structures of the present invention; the fifth figure is the light-emitting diode of the present invention. Another cross-sectional schematic view of the body, which covers a protective layer to improve the reliability of the device; Figures 6 to 8 are schematic front views of another series of light-emitting diodes of the present invention, illustrating the geometry of the two-contact structure of the present invention Shape and relative position; The ninth figure is a schematic front view of another series of light emitting diodes of the present invention, illustrating the manner in which the n-type contact structure is placed in the middle; and the tenth figure is a schematic cross-sectional view of the ninth embodiment The n-type contact structure is placed in the middle. Explanation of Main Symbols 11 Insulating Substrate
第15頁 471190 圖式簡單說明 12 η型氮化鎵結構 13 發光結構 14 ρ型氮化鎵結構 15 透明接觸電極 16 中空圖案 17 ρ型接觸結構 18 η型歐姆接觸結構 19 保護層 22 η型GaN結構 25 透明接觸電極 || 2 7 ρ型接觸結構 28 η型接觸結構 32 平頂結構 33 η型GaN結構 35 透明接觸電極 37 ρ型接觸結構 38 η型接觸結構 42 η型GaN層 4 4 ρ型G a N層 45 ρ型透明接觸電極 m 47 ρ型接觸結構 48 η型接觸結構 52 η型GaN結構 53 發光結構Page 15 471190 Brief description of drawings 12 η-type GaN structure 13 Light-emitting structure 14 ρ-type GaN structure 15 Transparent contact electrode 16 Hollow pattern 17 ρ-type contact structure 18 η-type ohmic contact structure 19 Protective layer 22 η-type GaN Structure 25 Transparent contact electrode || 2 7 ρ-type contact structure 28 η-type contact structure 32 Flat-top structure 33 η-type GaN structure 35 Transparent contact electrode 37 ρ-type contact structure 38 η-type contact structure 42 η-type GaN layer 4 4 ρ-type G a N layer 45 ρ-type transparent contact electrode m 47 ρ-type contact structure 48 η-type contact structure 52 η-type GaN structure 53 Light emitting structure
第16頁 471190 圖式簡單說明 54 p型GaN結構 55 p型透明接觸電極 5 7 p型接觸結構 58 η型接觸結構 112 η型半導體層 113 ρ型半導體層 I 14 η型電極 115 ρ型電極 116 打線用塾(bonding pad) II 7 切斷的部分Page 16 471190 Brief description of drawings 54 p-type GaN structure 55 p-type transparent contact electrode 5 7 p-type contact structure 58 η-type contact structure 112 η-type semiconductor layer 113 ρ-type semiconductor layer I 14 η-type electrode 115 ρ-type electrode 116 Bonding pad II 7 Cut off part
I 第17頁I Page 17
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