TWI407246B - 光罩及使用該光罩之曝光方法 - Google Patents

光罩及使用該光罩之曝光方法 Download PDF

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Publication number
TWI407246B
TWI407246B TW095136984A TW95136984A TWI407246B TW I407246 B TWI407246 B TW I407246B TW 095136984 A TW095136984 A TW 095136984A TW 95136984 A TW95136984 A TW 95136984A TW I407246 B TWI407246 B TW I407246B
Authority
TW
Taiwan
Prior art keywords
substrate
mask
alignment mark
observation window
photomask
Prior art date
Application number
TW095136984A
Other languages
English (en)
Chinese (zh)
Other versions
TW200728905A (en
Inventor
Koichi Kajiyama
Yoshio Watanabe
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Publication of TW200728905A publication Critical patent/TW200728905A/zh
Application granted granted Critical
Publication of TWI407246B publication Critical patent/TWI407246B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)
TW095136984A 2005-10-07 2006-10-05 光罩及使用該光罩之曝光方法 TWI407246B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005295055A JP5145530B2 (ja) 2005-10-07 2005-10-07 フォトマスク及びそれを用いた露光方法

Publications (2)

Publication Number Publication Date
TW200728905A TW200728905A (en) 2007-08-01
TWI407246B true TWI407246B (zh) 2013-09-01

Family

ID=37942574

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136984A TWI407246B (zh) 2005-10-07 2006-10-05 光罩及使用該光罩之曝光方法

Country Status (5)

Country Link
JP (1) JP5145530B2 (ja)
KR (1) KR101205521B1 (ja)
CN (1) CN101273302B (ja)
TW (1) TWI407246B (ja)
WO (1) WO2007043323A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661218B (zh) * 2008-08-28 2012-06-13 富葵精密组件(深圳)有限公司 透明光掩模的制备方法
JP5633021B2 (ja) * 2009-06-29 2014-12-03 株式会社ブイ・テクノロジー アライメント方法、アライメント装置及び露光装置
JP5843191B2 (ja) * 2011-08-03 2016-01-13 株式会社ブイ・テクノロジー フォトマスク
KR20140017767A (ko) 2012-07-31 2014-02-12 삼성디스플레이 주식회사 증착용 마스크 및 이의 정렬 방법
CN104503203A (zh) * 2015-01-15 2015-04-08 京东方科技集团股份有限公司 掩膜板及其制备方法和显示面板中封框胶的固化方法
CN107300836B (zh) * 2017-08-16 2020-03-10 深圳市华星光电技术有限公司 曝光方法和曝光装置
JP6940873B2 (ja) * 2017-12-08 2021-09-29 株式会社ブイ・テクノロジー 露光装置および露光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568257A (en) * 1991-07-09 1996-10-22 Nikon Corporation Adjusting device for an alignment apparatus
JP2001057337A (ja) * 1999-06-25 2001-02-27 Svg Lithography Syst Inc 波面情報検出装置および検出方法
TW200405426A (en) * 2002-07-26 2004-04-01 Nippon Kogaku Kk Diffractive optical device, illuminating optical apparatus, exposure apparatus and exposure method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61185929A (ja) * 1985-02-13 1986-08-19 Nec Corp X線露光マスク
JPH0196655A (ja) * 1987-10-08 1989-04-14 Toshiba Corp ガラスマスク
JP2668834B2 (ja) * 1989-03-31 1997-10-27 ウシオ電機株式会社 露光装置
JPH09274323A (ja) * 1996-04-04 1997-10-21 Toppan Printing Co Ltd パターン露光方法
JP3740847B2 (ja) * 1998-06-29 2006-02-01 株式会社村田製作所 半導体装置の製造方法およびフォトマスクの位置合わせ方法
JP2000031015A (ja) * 1998-07-13 2000-01-28 Nikon Corp 位置検出方法、位置調整方法、走査露光方法及び走査型露光装置並びにデバイス製造方法
JP3085292B2 (ja) * 1998-10-14 2000-09-04 株式会社ニコン 走査露光装置
JP3884371B2 (ja) * 2002-11-26 2007-02-21 株式会社東芝 レチクル、露光モニタ方法、露光方法、及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5568257A (en) * 1991-07-09 1996-10-22 Nikon Corporation Adjusting device for an alignment apparatus
JP2001057337A (ja) * 1999-06-25 2001-02-27 Svg Lithography Syst Inc 波面情報検出装置および検出方法
TW200405426A (en) * 2002-07-26 2004-04-01 Nippon Kogaku Kk Diffractive optical device, illuminating optical apparatus, exposure apparatus and exposure method

Also Published As

Publication number Publication date
WO2007043323A1 (ja) 2007-04-19
KR101205521B1 (ko) 2012-11-28
JP2007102093A (ja) 2007-04-19
JP5145530B2 (ja) 2013-02-20
CN101273302A (zh) 2008-09-24
TW200728905A (en) 2007-08-01
CN101273302B (zh) 2012-02-01
KR20080053480A (ko) 2008-06-13

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