TWI406390B - High density integrated circuit module structure - Google Patents

High density integrated circuit module structure Download PDF

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Publication number
TWI406390B
TWI406390B TW099105589A TW99105589A TWI406390B TW I406390 B TWI406390 B TW I406390B TW 099105589 A TW099105589 A TW 099105589A TW 99105589 A TW99105589 A TW 99105589A TW I406390 B TWI406390 B TW I406390B
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Taiwan
Prior art keywords
substrate
circuit module
integrated circuit
contact pads
density integrated
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TW099105589A
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English (en)
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TW201130108A (en
Inventor
Hong Chi Yu
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Walton Advanced Eng Inc
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Priority to TW099105589A priority Critical patent/TWI406390B/zh
Priority to US12/662,242 priority patent/US8094455B2/en
Priority to EP10159936A priority patent/EP2362719A1/en
Priority to KR1020100034051A priority patent/KR101139244B1/ko
Priority to JP2010097016A priority patent/JP5237984B2/ja
Publication of TW201130108A publication Critical patent/TW201130108A/zh
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Publication of TWI406390B publication Critical patent/TWI406390B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/716—Coupling device provided on the PCB
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/36—Assembling printed circuits with other printed circuits
    • H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/72—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures
    • H01R12/73—Coupling devices for rigid printing circuits or like structures coupling with the edge of the rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/117—Pads along the edge of rigid circuit boards, e.g. for pluggable connectors
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0311—Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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Description

高密度積體電路模組結構
本發明係關於一種積體電路模組結構，特別係具有高密度之積體電路模組結構。
以往的積體電路模組結構(100)，請參照第1圖所示，包含一第一封裝件(110)、一第二封裝件(120)與一載板(130)。該第一封裝件(110)係包含有一第一基板(111)、一第一晶片(112)、複數個第一凸塊(113)以及複數個第一錫球(114)。該第二封裝件(120)係包含有一第二基板(121)、一第二晶片(122)、複數個第二凸塊(123)以及複數個第二錫球(124)。該第一晶片(112)係以該些第一凸塊(113)覆晶結合於該第一基板(111)，該第二晶片(122)係以該些第二凸塊(123)覆晶於該第二基板(121)，為了使產品功能性增加，必須將該第一封裝件(110)與該第二封裝件(120)堆疊，再透過該載板(130)、該些第一錫球(114)與該些第二錫球(124)使該第一封裝件(110)與該第二封裝件(120)形成電性連接，然而在該積體電路模組結構(100)，該第一封裝件(110)為了與該第二封裝件(120)電性連接，必須保留該載板(130)、該些第一錫球(114)與該些第二錫球(124)之設置空間，使得該積體電路模組結構(100)之厚度無法縮小，無法適用在輕、薄、短、小等微型記憶體電子產品。此外，透過該載板(130)、該些第一錫球(114)與該些第二錫球(124)使該第一封裝件(110)與該第二封裝件(120)形成電性連接的方式，導致製程上需要經過該些第一錫球(114)與該些第二錫球(124)接點的步驟，勢必無法減少相關的組裝工序及降低製造成本。此外，當該積體電路模組結構(100)承受應力時，即可能因振動因素而容易使該些第一錫球(114)與該些第二錫球(124)受到破壞，繼而造成訊號連結品質的不良。甚者，由於第一晶片(112)與第二晶片(122)運作會產生高溫，亦容易使積體電路模組結構(100)產生散熱不良之問題。
因此，為解決上述問題，本發明之主要目的係在提供一種高密度積體電路模組結構，包含至少一基板及至少一散熱元件，該些基板與該散熱元件電性接觸，使該些基板成反向交錯接觸之堆疊結構，以在電子產品裝置受限的高度內擴充該產品之功能。
本發明之再一目的係在提供一種高密度積體電路模組結構，包含至少一基板及至少一散熱元件，該些基板與該散熱元件電性接觸，使該些基板成反向交錯接觸之堆疊結構，其中該散熱元件之導熱體具有至少一非平坦構造，當本發明承受應力時，可藉由該非平坦構造的設置以提供應力吸收及緩衝之功能具有較佳之防振能力，維持良好的信號連結品質。
本發明之次一目的係在提供一種高密度積體電路模組結構，包含至少一基板及至少一散熱元件，該些基板與該散熱元件電性接觸，使該些基板成反向交錯接觸之堆疊結構，其中該散熱元件之導熱體可使本發明具有較佳之散熱效果。
本發明之另一目的係在提供一種高密度積體電路模組結構，包含至少一基板及至少一散熱元件，該些基板與該散熱元件電性接觸，使該些基板成反向交錯接觸之堆疊結構，由於該些基板之結合面上無任何銲接點，因此在組裝工序上不需經過錫球與載板接點等相關步驟，使需要提昇功能或增加容量時的組裝流程更為簡單方便並降低製造成本。
為達到上述目的，本發明所使用的主要技術手段是採用以下技術方案來實現的。本發明為一種高密度積體電路模組結構，其包含至少一基板及至少一散熱元件，該基板具有一內表面及一外表面，該外表面具有複數外接觸墊及複數轉接接觸墊，其中該些外接觸墊與該轉接接觸墊電性連接，該基板之該內表面設置至少一電子元件，其係與該外接觸墊及該轉接接觸墊電性連接；其中至少一散熱元件，其包含複數導熱體，其中該散熱元件設置於該基板具有該些轉接接觸墊之端面，且該些導熱體接觸於該些轉接接觸墊，此外該些導熱體具有至少一非平坦構造；一基板之該外接觸墊係與另一基板之該轉接接觸墊藉由該些導熱體電性接觸，使該積體電路模組呈反向交錯接觸之高密度堆疊結構。
本發明的目的及解決其技術問題還可採用以下技術措施進一步實現。
前述的一種高密度積體電路模組結構，其中一基板之該外接觸墊係與另一基板之該轉接接觸墊藉由該些導熱體之非平坦構造電性接觸。
前述的一種高密度積體電路模組結構，其中該非平坦構造係為單數個突出部、複數個方齒形狀、複數個拱弧形狀之、複數個圓齒形狀或複數個凸點形狀之至少一種型態或其組合所組成。
前述的一種高密度積體電路模組結構，其中該外接觸墊係為金屬觸點，該些金屬觸點係相容於通用序列匯流排(USB)、迷你通用序列匯流排(Mini USB)、微型通用序列匯流排(Micro USB)或序列先進附加技術(e-SATA)之至少一種資料傳輸介面。
本發明還可以採用另一技術方案。一種高密度積體電路模組結構，其包含至少一基板、至少一散熱元件及至少一擴充基板，其中該基板具有一內表面及一外表面，該外表面具有複數外接觸墊及複數轉接接觸墊，其中該些外接觸墊與該轉接接觸墊電性連接，該基板之該內表面設置一第一連接埠及至少一電子元件，其係與該外接觸墊及該轉接接觸墊電性連接；其中至少一散熱元件，其包含複數導熱體，其中該散熱元件設置於該基板具有該些轉接接觸墊之端面，且該些導熱體接觸於該些轉接接觸墊，此外該些導熱體具有至少一非平坦構造；至少一擴充基板，該擴充基板具有一內表面其包含一第二連接埠及至少一電子元件，該電子元件與擴充基板電性連接；其中，一基板之該外接觸墊係與另一基板之該轉接接觸墊藉由該些導熱體電性接觸，且該擴充基板之該第二連接埠與該基板之該第一連接埠互相耦接，使該積體電路模組電性連接用來傳輸訊號。
前述的一種高密度積體電路模組結構，其中該擴充基板之該電子元件包含一控制晶片及一記憶體，且該控制晶片透過互相耦接之該第二連接埠與該基板之第一連接埠接收該基板所傳輸之訊號。
前述的一種高密度積體電路模組結構，其中該基板之電子元件包含一控制晶片及一記憶體，且該控制晶片透過互相耦接之該第一連接埠與該擴充基板之第二連接埠接收該擴充基板所傳輸之訊號。
前述的一種高密度積體電路模組結構，其中一基板之該外接觸墊係與另一基板之該轉接接觸墊藉由該些導熱體之非平坦構造電性接觸。
前述的一種高密度積體電路模組結構，其中該非平坦構造係為單數個突出部、複數個方齒形狀、複數個拱弧形狀、複數個圓齒形狀或複數個凸點形狀之至少一種型態或其組合所組成。
前述的一種高密度積體電路模組結構，其中該外接觸墊係為金屬觸點，該些金屬觸點係相容於通用序列匯流排(USB)、迷你通用序列匯流排(Mini USB)、微型通用序列匯流排(Micro USB)或序列先進附加技術(e-SATA)之至少一種資料傳輸介面。
相較於習知技術，本發明具有功效在於，使該些基板與該散熱元件電性接觸，使該些基板成反向交錯接觸之堆疊結構，其中該散熱元件之導熱體具有至少一非平坦構造，使本發明具有：(1)在電子產品裝置受限的高度內擴充該產品之功能；(2)當該結構承受應力時，可藉由該非平坦構造的設置以提供應力吸收及緩衝之功能具有較佳之防振能力，維持良好的信號連結品質；(3)散熱元件之導熱體可使該些基板具有較佳之散熱效果；(4)由於該些基板之結合面上無任何銲接點，因此在組裝工序上不需經過錫球與載板接點等相關步驟，使需要提昇功能或增加容量時的組裝流程更為簡單方便並降低製造成本。
為了讓本發明之目的、特徵與功效更明顯易懂，以下特別列舉本發明之較佳實施型態：
請參照第2、3圖所示，一種高密度積體電路模組結構主要包含至少一基板(20)、至少一散熱元件(30)。該基板(20)係作為晶片載體與傳遞介面，其具有一內表面(201)以及一外表面(202)，可為一種高密度兩面導通之多層印刷電路板，內部形成有線路(未顯示於圖中)。其中，該外表面(202)具有複數外接觸墊(203)及複數轉接接觸墊(204)，其中，所述該外接觸墊(203)係與該轉接接觸墊(204)呈反向對稱設置，且該外接觸墊(203)係藉由該基板(20)之線路(未顯示於圖中)與該轉接接觸墊(204)電性連接。該外接觸墊(203)與該轉接接觸墊(204)係可為金屬觸點，其中該外接觸墊(203)之金屬觸點係相容於通用序列匯流排(USB)、迷你通用序列匯流排(Mini USB)、微型通用序列匯流排(Micro USB)或序列先進附加技術(e-SATA)之至少一種資料傳輸介面。此外，基板(20)之該內表面(201)設置至少一電子元件(205)，其係電性連接至該些外接觸墊(203)及該些轉接接觸墊(204)，可利用打線形成之銲線或覆晶接合技術使該電子元件(205)電性連接至該基板(20)。通常該電子元件(205)可包含一控制晶片(2051)及一記憶體(2052)，其中該記憶體(2052)可為快閃記憶體(FLASH)、靜態隨機存取記憶體(Static-Random-Access-Memory，SRAM)、特殊用途積體電路(Application-Specific-Integrated-Circuit，ASIC)、記憶體晶片或同步動態隨機存取記憶體(Synchronous-Dynamic-Random-Access-Memory，SDRAM)。在本實施例中，該控制晶片(2051)係電性連接至該記憶體(2052)、該外接觸墊(203)與該轉接接觸墊(204)，且該控制晶片(2051)係可控制對該記憶體(2052)之儲存與讀取動作並偵測該些轉接接觸墊(204)是否連接有另一基板(20’)並傳遞控制訊號予該基板(20’)。此外，散熱元件(30)包含複數導熱體(31)，散熱元件(30)係設置於該基板(20)具有該些轉接接觸墊(204)之端面，且導熱體(31)接觸於該些轉接接觸墊(204)，此外該些導熱體(31)具有至少一非平坦構造(311)，因此，一基板(20)之外接觸墊(203)係與另一基板(20’)之轉接接觸墊(204’)藉由導熱體(31)電性接觸，使該積體電路模組呈反向交錯接觸之高密度堆疊結構，較佳者，一基板(20)之該外接觸墊(203)係與另一基板(20’)之該轉接接觸墊(204’)藉由該些導熱體(31)之非平坦構造(311)電性接觸，可使本發明在受限的產品高度內水平向連接更多基板以擴充該產品之功能，亦可藉由該非平坦構造的設置使本發明具有較佳之防振能力，維持良好的信號連結品質。較佳者，該非平坦構造(311)的形狀可以為單數個凸出部組成(如第5圖所示)、複數個方齒形狀組成(如第6圖所示)、複數個拱弧形狀組成(如第7圖所示)、複數個圓齒形狀組成(如第8圖所示)、複數個凸點形狀組成(如第9-1及9-2圖所示)，或者為該些形狀之單複數任意組合，亦可以為其他各種未列舉之單複數形狀之組合。此外，該散熱元件(30)係以但不限於以卡掣方式(未繪製於圖中)與該基板(20)鄰近於該外接觸墊(203)之一側接合，使該非平坦構造(311)接觸於該外接觸墊(203)(如第4-1圖所示)，亦可使該散熱元件(30)以卡掣方式(未繪製於圖中)與該基板(20)鄰近於該轉接接觸墊(204)之一側接合，使該非平坦構造(311)接觸於該轉接接觸墊(204)(如第4-2圖所示)，以供插接時之電性導通，然而其接合方式並不僅限於卡掣方式，凡舉業界常使用之鉚合工法、榫接、卡扣、鎖附、嵌設等任何可使其接合之方式皆可任意運用。並且，由於該些基板(20，20’)之結合面上無任何銲接點，因此在組裝工序上不需透過如第1圖先前技術之載板(130)與第一錫球(114)及第二錫球(124)接點的步驟，使需要提昇功能或增加容量時的組裝流程更為簡單方便並降低製造成本。較佳者，本發明散熱元件(30)之導熱體(31)可以為銅、鋁或任何其他金屬所製成，以對該些基板(20，20’)於運作時所產生的熱源進行導熱，能具有較佳之散熱功效。此外，該散熱元件(30)與該基板(20)係可採用分離式連接，可採取插合與分離之型態。此外，請參閱第10圖，本發明上可增設一殼體(50)，使基板(20)與散熱元件(30)皆容置於該殼體(50)內，但需使基板(20)外表面(202)之外接觸墊(203)顯露於殼體(50)之外，使外接觸墊(203)之金屬觸點可與外部資訊裝置，如電腦之相關資料傳輸介面之連接口接合以進行資料傳輸。
請參閱第11圖，為本發明之第二實施型態，為一種高密度積體電路模組結構，在第一實施型態及第2至10圖中已說明的一種高密度積體電路模組結構之相似部件，於第11圖中以相同的符號標示或省略不再敘述。
第二實施型態與第一實施型態的差異在於，一種高密度積體電路模組結構，基板(20)內表面(201)設置一第一連接埠(206)及至少一電子元件(205)，該電子元件(205)與外接觸墊(203)及轉接接觸墊(204)電性連接。此外，具有至少一擴充基板(40)，其具有一內表面(401)，該內表面(401)包含一第二連接埠(402)及至少一電子元件(403)，且電子元件(403)與擴充基板(40)電性連接。當一基板(20)之外接觸墊(203)與另一基板(20’)之轉接接觸墊(204’)藉由該些導熱體(30)電性接觸，且該擴充基板(40)之第二連接埠(402)與基板(20)之第一連接埠(206)互相耦接，使該積體電路模組電性連接用來傳輸訊號。較佳者，第一連接埠(206)與第二連接埠(402)分別可互為公插頭及母插座之連接器型態，以利基板(20)與擴充基板(40)之間的穩固接合。擴充基板(40)之電子元件(403)包含一控制晶片(4031)及一記憶體(4032)，且控制晶片(4031)透過互相耦接之第二連接埠(402)與基板(20)之第一連接埠(206)接收來自基板(20)所傳輸之訊號；此外，基板(20)之電子元件(205)可包含一控制晶片(2051)及一記憶體(2052)，且亦可藉由基板(20)之控制晶片(2051)透過互相耦接之第一連接埠(206)與擴充基板(40)之第二連接埠(402)接收來自擴充基板(40)所傳輸之訊號。因此，藉由該基板(20)與擴充基板(40)之控制晶片(2051，4031)之間之訊號傳遞，可使本發明達到擴充既有資料儲存容量或者附加其他功能的功效。
綜上所述，本發明該些基板與散熱元件之電性接觸，使該些基板成反向交錯接觸之堆疊結構，亦可增設至少一擴充基板，使其與基板電性接觸，此外散熱元件之導熱體具有至少一非平坦構造，使本發明具有：(1)在電子產品裝置受限的高度內擴充該產品之功能；(2)當該結構承受應力時，可藉由該非平坦構造的設置以提供應力吸收及緩衝之功能，具有較佳之防振能力，維持良好的信號連結品質；(3)散熱元件之導熱體可使該些基板具有較佳之散熱效果；(4)由於該些基板之結合面上無任何銲接點，因此在組裝工序上不需經過錫球與載板接點等相關步驟，使需要提昇功能或增加容量時的組裝流程更為簡單方便並降低製造成本。因此本發明之功效有別於一般傳統高密度積體電路模組結構，此於同類產品當中實屬首創，符合發明專利要件，爰依法俱文提出申請。
惟，以上所述者僅為本發明之較佳實施型態，舉凡應用本發明說明書、申請專利範圍或圖式所為之等效結構變化，理應包含在本發明之專利範圍內。
100．．．積體電路模組結構
110．．．第一封裝件
111．．．第一基板
112．．．第一晶片
113．．．第一凸塊
114．．．第一錫球
120．．．第二封裝件
121．．．第二基板
122．．．第二晶片
123．．．第二凸塊
124．．．第二錫球
130．．．載板
30．．．散熱元件
31．．．導熱體
311．．．非平坦構造
40．．．擴充基板
401．．．內表面
402．．．第二連接埠
403．．．電子元件
4031．．．控制晶片
4032．．．記憶體
50．．．殼體
20，20'．．．基板
201，201'．．．內表面
202，202'．．．外表面
203，203'．．．外接觸墊
204，204'．．．轉接接觸墊
205，205'．．．電子元件
2051．．．控制晶片
2052．．．記憶體
206．．．第一連接埠
第1圖：習知高密度積體電路模組結構剖面圖。
第2圖：為本發明散熱元件之立體圖。
第3圖：為本發明一種高密度積體電路模組結構之剖面圖。
第4-1圖：本發明散熱元件之導熱體接觸於外接觸墊之剖面圖。
第4-2圖：本發明散熱元件之導熱體接觸於轉接接觸墊之剖面圖。
第5圖：本發明非平坦構造呈單數個凸出部之剖面圖。
第6圖：本發明非平坦構造呈複數個方齒型之剖面圖。
第7圖：本發明非平坦構造呈複數個拱弧型之剖面圖。
第8圖：本發明非平坦構造呈複數個圓齒型之剖面圖。
第9-1圖：本發明非平坦構造呈複數個凸點型態之立體示意圖。
第9-2圖：本發明第9-1圖之A-A剖面圖。
第10圖：為本發明一種高密度積體電路模組結構包含殼體之剖面圖。
第11圖：本發明第二種實施型態之剖面示意圖。
30．．．散熱元件
31．．．導熱體
311．．．非平坦構造

Claims (11)

  1. 一種高密度積體電路模組結構，其包含：至少一基板20，該基板20具有一內表面201及一外表面202，該外表面202具有複數外接觸墊203及複數轉接接觸墊204，其中該些外接觸墊203與該轉接接觸墊204電性連接，該基板20之該內表面201設置至少一電子元件205，其係與該外接觸墊203及該轉接接觸墊204電性連接；至少一散熱元件30，其包含複數導熱體31，其中該散熱元件30設置於該基板20具有該些轉接接觸墊204之端面，且該些導熱體31接觸於該些轉接接觸墊204，此外該些導熱體31具有至少一非平坦構造311；一基板20之該外接觸墊203係與另一基板20’之該轉接接觸墊204’藉由該些導熱體31電性接觸，使該積體電路模組呈反向交錯接觸之高密度堆疊結構；其中該散熱元件30係以卡掣、鉚合、榫接、卡扣、鎖附、嵌設等接合方式之任一接合該基板20，可使該些基板20，20’之結合面上無任何銲接點，可縮減組裝工序；其中該基板20之該內表面201設置一第一連接埠206及至少一電子元件205，其係與該外接觸墊203及該轉接接觸墊204電性連接並且該第一連接埠206電性連接於至少一擴充基板40之一第二連接埠402；其中其中，一基板20之該外接觸墊203係與另一基板20’ 之該轉接接觸墊204’藉由該些導熱體30電性接觸，且該擴充基板40之該第二連接埠402與該基板20之該第一連接埠206互相耦接，使該積體電路模組電性連接用來傳輸訊號。
  2. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中一基板20之該外接觸墊203係與另一基板20’之該轉接接觸墊204’藉由該些導熱體31之非平坦構造311電性接觸。
  3. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中，該非平坦構造311係為單數個突出部、複數個方齒形狀、複數個拱弧形狀、複數個圓齒形狀或複數個凸點形狀之至少一種型態或其組合所組成。
  4. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該外接觸墊203係為金屬觸點，該些金屬觸點係相容於通用序列匯流排(USB)、迷你通用序列匯流排(Mini USB)、微型通用序列匯流排(Micro USB)或序列先進附加技術(e-SATA)之至少一種資料傳輸介面。
  5. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該擴充基板40之該電子元件403包含一控制晶片4031及一記憶體4032，且該控制晶片4031透過互相耦接之該第二連接埠402與該基板20之第一連接埠206接收該基板20所傳輸之訊號。
  6. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該基板20之電子元件205包含一控制晶片2051及一記憶體2052，且該控制晶片2051透過互相耦接之該第一連接埠206與該擴充基板40之第二連接埠402接收該擴充基板40所傳輸之訊號。
  7. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中一基板20之該外接觸墊203係與另一基板20’之該轉接接觸墊204’藉由該些導熱體31之非平坦構造311電性接觸。
  8. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中，該非平坦構造311係為單數個突出部、複數個方齒形狀、複數個拱弧形狀、複數個圓齒形狀或複數個凸點形狀之至少一種型態或其組合所組成。
  9. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該外接觸墊203係為金屬觸點，該些金屬觸點係相容於通用序列匯流排(USB)、迷你通用序列匯流排(Mini USB)、微型通用序列匯流排(Micro USB)或序列先進附加技術(e-SATA)之至少一種資料傳輸介面。
  10. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該第二連接埠402係設置於該擴充基板40之一內表面401；此外至少一電子元件403係設置於該擴充基板40之該內表面401；該電子元件403與該擴充基板40電性連接。
  11. 依申請專利範圍第1項所述之一種高密度積體電路模組結構，其中該擴充基板40之該第二連接埠402與該基板20之該第一連接埠206互相耦接，使該積體電路模組電性連接用來傳輸訊號。
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