TWI401742B - Plasma etching apparatus - Google Patents
Plasma etching apparatus Download PDFInfo
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- TWI401742B TWI401742B TW099127239A TW99127239A TWI401742B TW I401742 B TWI401742 B TW I401742B TW 099127239 A TW099127239 A TW 099127239A TW 99127239 A TW99127239 A TW 99127239A TW I401742 B TWI401742 B TW I401742B
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- inner chamber
- cathode
- exhaust
- air holes
- baffle
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- 238000001020 plasma etching Methods 0.000 title claims description 10
- 239000007789 gas Substances 0.000 claims description 25
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 210000002381 plasma Anatomy 0.000 description 34
- 239000012495 reaction gas Substances 0.000 description 26
- 239000011148 porous material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000013022 venting Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000007599 discharging Methods 0.000 description 4
- 239000013618 particulate matter Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
本發明涉及一種能處理大尺寸晶體的等離子體蝕刻裝置，尤其涉及一種能提高等離子體均勻性的等離子體蝕刻裝置，它將一個完整的陰極內襯從外部***到陰極裝置中，其中所述的陰極內襯在兩層上設有多個第一氣孔和第二氣孔，它們彼此相互間隔，使反應室中的反應氣體能同時保持氣體流動和廢氣流動的均勻性，防止接地的完整陰極內襯的下部使反應室發生閃光現象。The present invention relates to a plasma etching apparatus capable of processing large-sized crystals, and more particularly to a plasma etching apparatus capable of improving plasma uniformity, which inserts a complete cathode liner from the outside into a cathode apparatus, wherein The cathode liner is provided on the two layers with a plurality of first pores and second pores which are spaced apart from each other so that the reaction gas in the reaction chamber can simultaneously maintain the uniformity of gas flow and exhaust gas flow, and prevent the grounding of the complete cathode liner. The lower part causes the reaction chamber to flash.
用於半導體積體電路器件的大尺寸晶片和作為液晶顯示器(LCD)等關鍵部分使用的玻璃基板通常會通過在一個表面上形成若干個薄膜層，並選擇性地僅將部分薄膜層移除，形成某個預定形狀的超細微結構，並形成一個複雜結構的環形或薄的薄膜層。Large-sized wafers for semiconductor integrated circuit devices and glass substrates used as key parts such as liquid crystal displays (LCDs) typically have a plurality of thin film layers formed on one surface and selectively remove only a portion of the thin film layers. An ultrafine structure of a predetermined shape is formed and a ring-shaped or thin film layer of a complicated structure is formed.
上述的各種處理方法主要是用在那些能夠從外面分離晶片或基板的內室或反應室中。The various treatment methods described above are primarily used in internal chambers or reaction chambers that are capable of separating wafers or substrates from the outside.
在上述方法中較優選的是蝕刻方法，向內室或反應爐中通入一種反應氣體(如四氟化碳(CF4 )，氯氣(Cl2 )，溴化氫(HBr)等)，在一個晶片表面產生等離子體反應，從而去除預定的材料。該蝕刻方法是一個使用一種光刻膠作為一種掩蓋劑以光刻膠模式，在基板上形成瞬間電路來選擇性地去除部分，而不是完全覆蓋。In the above method, an etching method is preferred, and a reaction gas (such as carbon tetrafluoride (CF 4 ), chlorine gas (Cl 2 ), hydrogen bromide (HBr), etc.) is introduced into the inner chamber or the reaction furnace. A wafer surface generates a plasma reaction to remove a predetermined material. The etching method uses a photoresist as a masking agent in a photoresist mode to form an instantaneous circuit on the substrate to selectively remove portions instead of completely covering them.
由於在蝕刻方法中最重要的是維持整個底板表面上的蝕刻均勻性，因此內室中需要形成均勻的等離子體，這些等離子體與整個底板表面接觸，從而改進蝕刻底板的均勻性，防止過程中產生錯誤。Since the most important in the etching method is to maintain the etching uniformity on the entire surface of the substrate, it is necessary to form a uniform plasma in the inner chamber, and these plasmas are in contact with the entire surface of the substrate, thereby improving the uniformity of the etching substrate and preventing the process. An error has occurred.
在一個傳統的等離子體蝕刻裝置中，為了使內室中的等離子體是均勻的，需要在陰極裝置的外圓周上安裝一塊設有多個氣孔的擋板，在內室的下面安裝一個泵排出部分，這樣就可以操作該泵排出部分來泵排出副產物，如內室中的一種反應氣體，一種聚合物，一種顆粒物等。於是傳統的等離子體蝕刻裝置就能通過均勻地排出內室中的反應氣體來確保等離子體的均勻性。In a conventional plasma etching apparatus, in order to make the plasma in the inner chamber uniform, it is necessary to install a baffle plate having a plurality of air holes on the outer circumference of the cathode device, and a pump discharge is arranged under the inner chamber. In part, the pump discharge portion can be operated to pump by-products, such as a reactive gas in the inner chamber, a polymer, a particulate matter, and the like. Thus, a conventional plasma etching apparatus can ensure plasma uniformity by uniformly discharging the reaction gas in the inner chamber.
即如反應氣體等副產物能不斷地從內室均勻地流出，於是內室中的等離子體就在底板上均勻地散開，而不會受到反應氣體、副產物等產生的阻力影響。That is, if a by-product such as a reaction gas can continuously flow out uniformly from the inner chamber, the plasma in the inner chamber is uniformly dispersed on the bottom plate without being affected by the resistance generated by the reaction gas, by-products, and the like.
但是，上述傳統的蝕刻裝置具有下述問題。However, the above conventional etching apparatus has the following problems.
首先，由於等離子體反應中產生的反應氣體、聚合物或顆粒物是泵排過一塊擋板的，這就對排出的反應氣體、副產物等有一個均勻性的限制。因此就產生了無法保證內室中等離子體均勻性的問題。First, since the reaction gas, polymer or particulate matter generated in the plasma reaction is pumped through a baffle, there is a uniformity restriction on the discharged reaction gas, by-products and the like. Therefore, there is a problem that plasma uniformity in the inner chamber cannot be ensured.
其次，由於擋板不能有效地與內室進行接地，因此就產生了這樣一個問題，即會發生等離子體閃光現象，其中氣孔間的等離子體是非均勻地閃光的。Secondly, since the baffle cannot be effectively grounded to the inner chamber, there arises a problem that a plasma flash phenomenon occurs in which the plasma between the air holes is non-uniformly flashed.
再次，由於沒有設置控制氣孔孔徑比率的控制構件，因此就產生了這樣一個問題，即不能通過控制內室中的氣體流動或流出來暫態地控制底板的蝕刻率。Again, since there is no control member for controlling the ratio of the pore diameters, there arises a problem that the etching rate of the bottom plate cannot be temporarily controlled by controlling the flow or outflow of gas in the inner chamber.
本發明的一個優選實施方面是解決至少一個上述問題和/或缺點，提供至少一種下述優點。因此，本發明的一個優選實施方面是保持內室中氣體流動和流出的均勻性，通過泵排出等離子反應中產生的一種反應氣體、一種聚合物或一種顆粒物，它們穿過完整的陰極內襯，該內襯在兩層上設有多個第一氣孔和第二氣孔。A preferred embodiment of the present invention addresses at least one of the above problems and/or disadvantages and provides at least one of the advantages described below. Accordingly, a preferred embodiment of the present invention is to maintain uniformity of gas flow and outflow in the inner chamber by pumping a reactive gas, a polymer or a particulate material produced in the plasma reaction, which passes through the complete cathode lining, The lining is provided with a plurality of first air holes and second air holes on two layers.
本發明的另一個優選實施方面是改進陰極內襯的地面反作用力，從而防止氣孔間產生等離子體閃光現象。Another preferred embodiment of the present invention is to improve the ground reaction force of the cathode liner to prevent plasma flashing between the pores.
本發明還有一個優選實施方面是通過實現對第二氣孔的孔徑比例進行控制來保證整個底板表面的蝕刻均勻性，並通過內室中的氣體流動和流出實現暫態控制來控制等離子體的均勻性。Still another preferred embodiment of the present invention is to control the uniformity of the plasma by controlling the ratio of the apertures of the second air holes to ensure the uniformity of the etching of the entire bottom surface, and to realize transient control by gas flow and outflow in the inner chamber. Sex.
如本發明一方面所述地公開了一種等離子體蝕刻裝置。裝置包括一個內室，一個陰極裝置和一個完整的陰極內襯。所述的內腔形成了一個等離子體反應間隔。設置在內室的內中間部分的陰極裝置可以支撐一塊底板。所述的完整的陰極內襯在兩層上設有多個第一氣孔和第二氣孔，，它們彼此相互間隔，從而使內室中的氣體流動和流出保持均勻性，並且該陰極內襯從外部***到陰極裝置中，並且其底部與內室的內表面相連。A plasma etching apparatus is disclosed as described in one aspect of the invention. The apparatus includes an inner chamber, a cathode assembly and a complete cathode liner. The inner chamber forms a plasma reaction interval. A cathode device disposed in the inner middle portion of the inner chamber can support a bottom plate. The complete cathode liner is provided on the two layers with a plurality of first pores and second pores spaced apart from each other to maintain uniformity of gas flow and outflow in the inner chamber, and the cathode liner is The outside is inserted into the cathode device, and the bottom thereof is connected to the inner surface of the inner chamber.
所述的陰極內襯包括一塊放射狀地設有多個第一氣孔的擋板，一個上端與擋板內圓周相連的固定長度的襯墊部分，一個設置在襯墊部分下端、與內室連接且放射狀地設有多個第二氣孔的排氣部分。The cathode liner comprises a baffle radially provided with a plurality of first air holes, a fixed length pad portion having an upper end connected to the inner circumference of the baffle, and a bottom portion disposed at the lower end of the pad portion and connected to the inner chamber And a plurality of exhaust portions of the second air holes are radially provided.
擋板的多個第一氣孔由多個相互間隔且每個間距均相等的槽組成。The plurality of first air holes of the baffle are composed of a plurality of slots spaced apart from one another and equally spaced.
擋板內圓周上有若干處與襯墊部分的下表面螺接。There are several places on the inner circumference of the baffle that are screwed to the lower surface of the pad portion.
所述的排氣部分包括一塊排氣板，該排氣板上以固定間隔地設有多個第二氣孔，這些第二氣孔與外方向之間的斜度都是相同的，此外所述的排氣部分還包括一塊沿排氣板底部的外圓周延伸到外面的連接板，該板與內室螺接。The exhausting portion includes a venting plate, and the venting plate is provided with a plurality of second vent holes at regular intervals, and the inclination between the second venting holes and the outer direction is the same, The venting portion further includes a web extending to the outside along the outer circumference of the bottom of the venting plate, the plate being screwed to the inner chamber.
設置在排氣板上表面的一塊控制板可以進行滑行旋轉，該控制板上設有多個與多個第二氣孔對應的控制部分，它們也能同時控制第二氣孔的孔徑比例。A control panel disposed on the surface of the exhaust plate can be slidably rotated. The control panel is provided with a plurality of control portions corresponding to the plurality of second air holes, which can also simultaneously control the aperture ratio of the second air holes.
排氣板的上表面上設有多塊間隔控制板，它們可以在排氣板的上部滑行，從而控制那些第二氣孔中每個氣孔的孔徑比例。The upper surface of the venting plate is provided with a plurality of spacing control plates which are slidable on the upper portion of the venting plate to control the ratio of the apertures of each of the second venting holes.
所述的裝置還包括一個墊圈，它可以防止反應氣體在連接板的底側表面上發生洩漏。The apparatus further includes a gasket that prevents leakage of the reaction gas on the bottom side surface of the web.
所述的陰極內襯上塗有氧化鋁(Al2 O3 )和氧化釔(Y2 O3 )。The cathode liner is coated with aluminum oxide (Al 2 O 3 ) and yttrium oxide (Y 2 O 3 ).
下面將結合附圖具體說明本發明的優選實施例。為了使下述說明更簡潔，將會在說明中省略其中公知的結構和構造。Preferred embodiments of the present invention will be specifically described below with reference to the accompanying drawings. In order to make the following description more concise, well-known structures and configurations are omitted in the description.
對本發明的具體描述將結合附圖完成。A detailed description of the invention will be made in conjunction with the drawings.
圖1是本發明所述的等離子體蝕刻裝置的側視圖。1 is a side view of a plasma etching apparatus according to the present invention.
如圖1所示，本發明所述的等離子體蝕刻包括一個內室1、一個陰極裝置10和一個陰極內襯50。As shown in FIG. 1, the plasma etch of the present invention includes an inner chamber 1, a cathode device 10, and a cathode liner 50.
所述的內室1從內部分隔出一個等離子體反應的空間。在內室1的頂部中間安裝了一個通往反應氣體的氣體注射器5。內室1的底部中間設有一個排氣部分8，用於排出某種反應副產物，如反應氣體、聚合物、顆粒物等。The inner chamber 1 separates a space for plasma reaction from the inside. A gas injector 5 to the reaction gas is installed in the middle of the top of the inner chamber 1. An exhaust portion 8 is provided in the middle of the bottom of the inner chamber 1 for discharging a reaction by-product such as a reaction gas, a polymer, a particulate matter or the like.
此外，內室1的一側還與外部接地，通過一種無線電頻率(RF)電源7將內室1中的反應氣體轉化為一種等離子體狀態。Further, one side of the inner chamber 1 is also grounded to the outside, and the reaction gas in the inner chamber 1 is converted into a plasma state by a radio frequency (RF) power source 7.
所述的陰極裝置10為RF電源7形成一個電極，同時支撐一塊晶片或底板(圖中未顯示)，因此它是垂直地設置於內室1的中部。The cathode device 10 forms an electrode for the RF power source 7 while supporting a wafer or a substrate (not shown) so that it is vertically disposed in the middle of the inner chamber 1.
所述的陰極裝置10與RF電源7相連，並穩固地安裝在底板的上表面。The cathode device 10 is connected to the RF power source 7 and is stably mounted on the upper surface of the bottom plate.
因此，RF電源7通過電流去除通入內室1的反應氣體，並將反應氣體轉化為一種等離子態，再通過等離子體來蝕刻處理底板表面。Therefore, the RF power source 7 removes the reaction gas introduced into the inner chamber 1 by current, converts the reaction gas into a plasma state, and etches the surface of the substrate by plasma.
所述的陰極裝置10可以包括一個用於穩定地固定底板的靜電吸盤(圖中未顯示)，並且還可以安裝一根氣體管(圖中未顯示)，氦氣(He)等氣體在這根氣體管中迴圈，冷卻底板。The cathode device 10 may include an electrostatic chuck (not shown) for stably fixing the bottom plate, and may also be provided with a gas pipe (not shown), such as helium (He). Loop back in the gas tube and cool the bottom plate.
所述的靜電吸盤是一種通過在電極表面和目標物之間形成電吸引力，吸住一目標物的裝置。The electrostatic chuck is a device that sucks a target by forming an electrical attraction between the surface of the electrode and the target.
反應氣體穿過與陰極裝置10中心在同一條線上的氣體注射器5，進入到內室1的內部，使底板表面上可以均勻地形成等離子體。The reaction gas passes through the gas injector 5 on the same line as the center of the cathode device 10, and enters the inside of the inner chamber 1, so that plasma can be uniformly formed on the surface of the bottom plate.
因此，RF電源7將內室1中的反應氣體轉化為一種等離子態，然後與底板表面發生反應，選擇性地蝕刻底板，最後穿過內室1底部的排氣部分8流出到外面。Therefore, the RF power source 7 converts the reaction gas in the inner chamber 1 into a plasma state, then reacts with the surface of the bottom plate, selectively etches the bottom plate, and finally flows out through the exhaust portion 8 at the bottom of the inner chamber 1 to the outside.
所述的陰極內襯50從外面***並安裝到陰極裝置10中。在下面涉及圖2和圖3的內容中將會進一步描述所述的陰極內襯50。The cathode liner 50 is inserted and mounted into the cathode device 10 from the outside. The cathode liner 50 will be further described below in relation to Figures 2 and 3.
圖2是本發明一個優選實施例所述的陰極內襯50的分解示意圖。圖3是本發明一個優選實施例所述的陰極內襯50的結構示意圖。2 is an exploded perspective view of a cathode liner 50 in accordance with a preferred embodiment of the present invention. 3 is a schematic view showing the structure of a cathode liner 50 according to a preferred embodiment of the present invention.
所述的陰極內襯50在兩層上設有多個第一氣孔22和第二氣孔42，它們彼此相互間隔，使內室中的氣體流動和流出能保持均勻性。所述的陰極內襯50包括一塊擋板20、一個襯墊部分30和一個排氣部分40。The cathode liner 50 is provided on the two layers with a plurality of first pores 22 and second pores 42 which are spaced apart from each other to maintain uniformity of gas flow and outflow in the inner chamber. The cathode liner 50 includes a baffle 20, a pad portion 30 and an exhaust portion 40.
擋板20使等離子體反應氣體能夠在內室1中存留一個固定的時間，然後再排出這些等離子體反應氣體。如圖所示，所述的擋板20安裝後能夠與圓形襯墊部分30的上表面相連，並位於陰極裝置10上端的外圓周表面上。The baffle 20 allows the plasma reaction gas to remain in the inner chamber 1 for a fixed period of time before discharging the plasma reaction gas. As shown, the baffle 20 can be attached to the upper surface of the circular pad portion 30 after installation and is located on the outer circumferential surface of the upper end of the cathode device 10.
因此，擋板20的內圓周表面與陰極裝置10的外圓周表面是對應地設置的。擋板20的外圓周表面與內室1的內圓周表面是對應地設置的。因此，擋板20是垂直地安裝在陰極裝置10的外圓周表面和內室1的內圓周表面之間的間隔部分處。Therefore, the inner circumferential surface of the baffle 20 is disposed corresponding to the outer circumferential surface of the cathode device 10. The outer circumferential surface of the baffle 20 is disposed corresponding to the inner circumferential surface of the inner chamber 1. Therefore, the shutter 20 is vertically installed at a space portion between the outer circumferential surface of the cathode device 10 and the inner circumferential surface of the inner chamber 1.
擋板20的形狀為具有固定厚度的圓環。擋板20的中心上設有一個穿過擋板的插孔25，陰極裝置10可以***到這個插孔25中。The baffle 20 is shaped as a ring having a fixed thickness. The center of the baffle 20 is provided with an insertion hole 25 through the baffle into which the cathode device 10 can be inserted.
擋板20的外圓周不僅限於圓形，它也可以是矩形等根據內室1的內圓周表面形狀確定的形狀。The outer circumference of the baffle 20 is not limited to a circular shape, and it may be a shape such as a rectangle or the like determined according to the shape of the inner circumferential surface of the inner chamber 1.
因此，擋板20的外圓周表面與內室1的內圓周表面接觸連接，而插孔25的內圓周表面與陰極裝置10的外圓周表面接觸連接。因此，內室1中的反應空間被分隔成上部和下部。Therefore, the outer circumferential surface of the baffle 20 is in contact connection with the inner circumferential surface of the inner chamber 1, and the inner circumferential surface of the insertion hole 25 is in contact connection with the outer circumferential surface of the cathode device 10. Therefore, the reaction space in the inner chamber 1 is divided into an upper portion and a lower portion.
擋板20上沿插孔25的圓周處間隔地設有多個組合孔20b，使用這些組合孔20b可以將固定槽20a連接並固定到襯墊部分30的上表面。A plurality of combination holes 20b are provided on the shutter 20 at intervals along the circumference of the insertion hole 25, and the fixing grooves 20b can be connected and fixed to the upper surface of the pad portion 30 by using these combination holes 20b.
第一氣孔22是設置在擋板20中。The first air hole 22 is provided in the baffle 20.
反應氣體會部分穿過的第一氣孔22是具有固定長度的槽，它們以固定的間隔設置成放射狀。The first air holes 22 through which the reaction gas partially passes are grooves having a fixed length which are radially arranged at fixed intervals.
第一氣孔22不僅限於設置成槽形，也可以設置成其他適於等離子體環境條件的形狀。The first air holes 22 are not limited to being provided in a groove shape, but may be provided in other shapes suitable for plasma environmental conditions.
所述的襯墊部分30從外面***到陰極裝置10中，該部分為上下兩端均開口的圓形。The pad portion 30 is inserted into the cathode device 10 from the outside, and this portion is a circular shape in which both upper and lower ends are open.
所述的襯墊部分30設有一個與陰極裝置10的外圓周表面對應地接觸的內圓周表面。此外，該襯墊部分30的上表面與擋板20的組合孔20b對應地設有多個組合孔30b。所以，襯墊部分30通過固定槽20a與擋板20上插孔25的下圓周表面接觸連接。The pad portion 30 is provided with an inner circumferential surface that corresponds to the outer circumferential surface of the cathode device 10. Further, the upper surface of the pad portion 30 is provided with a plurality of combination holes 30b corresponding to the combined holes 20b of the shutter 20. Therefore, the pad portion 30 is in contact with the lower circumferential surface of the insertion hole 25 of the shutter 20 through the fixing groove 20a.
所述的排氣部分40是設置在所述襯墊30的下面。The exhaust portion 40 is disposed below the gasket 30.
所述的排氣部分40使反應氣體、副產物等穿過擋板20，並最終排出到內室1的排氣部分8。所述的排氣部分40包括一個從襯墊部分30的底端伸出的排氣板41和一個從排氣板41的底端上外圓周表面向外伸出的連接板45。The exhaust portion 40 passes the reaction gas, by-products, and the like through the baffle 20, and is finally discharged to the exhaust portion 8 of the inner chamber 1. The exhaust portion 40 includes a venting plate 41 projecting from the bottom end of the lining portion 30 and a connecting plate 45 projecting outwardly from the outer circumferential surface of the bottom end of the venting plate 41.
所述的排氣板41是以固定的角度向外傾斜於襯墊部分30下端的外圓周。所述的第二氣孔42均以固定的間隔設置。The exhaust plate 41 is inclined outward at a fixed angle to the outer circumference of the lower end of the pad portion 30. The second air holes 42 are all disposed at regular intervals.
所述的第二氣孔42不限於具有如圖所示的形狀，它也可以被設置成各種形狀，如圓形、長孔形等。The second air hole 42 is not limited to have a shape as shown in the drawing, and it may be provided in various shapes such as a circular shape, a long hole shape, or the like.
所述的多個連接板45分別從排氣板41下端的外圓周上沿垂直方向延伸一個固定的距離。這些連接板45設有多個組合孔40b，它們與固定槽40a組合設置用於固定內室1。The plurality of connecting plates 45 respectively extend from the outer circumference of the lower end of the exhaust plate 41 by a fixed distance in the vertical direction. These connecting plates 45 are provided with a plurality of combination holes 40b which are provided in combination with the fixing grooves 40a for fixing the inner chamber 1.
於是，由於固定槽40a將連接板45穩定地組合到內室1上，此外還增加了一個地面反作用力，因此所述的陰極內襯50能夠防止傳統的等離子體蝕刻裝置中，擋板未穩定接地使氣孔中出現的等離子體閃光現象。Thus, since the fixing groove 40a stably couples the connecting plate 45 to the inner chamber 1, and additionally adds a ground reaction force, the cathode inner liner 50 can prevent the baffle from being unstable in the conventional plasma etching apparatus. Grounding causes the plasma flash phenomenon that occurs in the air holes.
連接板45和內室1之間安裝了一個墊圈70，來防止反應氣體的非必要洩漏。A gasket 70 is installed between the connecting plate 45 and the inner chamber 1 to prevent unnecessary leakage of the reaction gas.
所述的墊圈70可以是圓環形金屬環。The gasket 70 can be a toroidal metal ring.
此外還可以在排氣板41的外面，與排氣板41對應地設置一塊控制板60，使之可以滑動旋轉。Further, on the outside of the exhaust plate 41, a control panel 60 may be provided corresponding to the exhaust plate 41 so as to be slidable.
所述的控制板60是可旋轉滑動地沿排氣板41設置的，其中控制板60從外面***襯墊部分30上，並安裝在排氣板41的上表面。所述的控制板60被設置成與排氣板41相對應的環形。The control board 60 is rotatably slidably disposed along the exhaust plate 41, wherein the control board 60 is inserted from the outside into the pad portion 30 and mounted on the upper surface of the exhaust plate 41. The control board 60 is provided in a ring shape corresponding to the exhaust plate 41.
所述的控制板60上以一定的間隔，與排氣板41上的第二氣孔42對應地設置了多個控制部分62。The control panel 60 is provided with a plurality of control portions 62 corresponding to the second air holes 42 on the exhaust plate 41 at regular intervals.
因此，如圖3所示，如果旋轉控制板60，即可以調節其與控制部分62的重疊面積，於是可以同時控制排氣板41上每個第二氣孔42的孔徑比例均。Therefore, as shown in FIG. 3, if the control panel 60 is rotated, the overlapping area with the control portion 62 can be adjusted, and thus the aperture ratio of each of the second air holes 42 on the exhaust plate 41 can be simultaneously controlled.
即，一位元操作者根據箭頭63的指示以合適的角度旋轉所述的控制板60，於是就可以控制第二氣孔42的孔徑比例來選擇條件，同時泵排氣，暫態地控制內室1中的氣體流動和流出。That is, the one-bit operator rotates the control panel 60 at an appropriate angle according to the indication of the arrow 63, so that the aperture ratio of the second air hole 42 can be controlled to select conditions, while the pump is exhausted, and the inner chamber is temporarily controlled. The gas in 1 flows and flows out.
圖4所示的是本發明另一個優選實施例所述的陰極內襯50。除了控制板結構之外，本實施例的結構與上述實施例均相同，因此下面將僅說明一個改進的結構。Figure 4 shows a cathode liner 50 in accordance with another preferred embodiment of the present invention. The structure of this embodiment is the same as that of the above embodiment except for the structure of the control board, and therefore only a modified structure will be described below.
如圖所示，多個單獨的控制板80被安裝在排氣板41的上表面。As shown, a plurality of individual control boards 80 are mounted on the upper surface of the exhaust plate 41.
所述的多個單獨控制板80是與排氣板41上第二氣孔42的數量相對應的，它們可以控制每個第二氣孔42的孔徑比例。The plurality of individual control plates 80 are corresponding to the number of second air holes 42 on the exhaust plate 41, and they can control the aperture ratio of each of the second air holes 42.
具體來說，所述的單獨控制板80是沿排氣板41可滑動地安裝的，它們可以對應地打開或關閉第二氣孔42。通過控制每個單獨控制板80的位置，一位操作者可以有差異地控制每個第二氣孔42的孔徑比例。Specifically, the individual control panels 80 are slidably mounted along the exhaust panel 41, which can open or close the second air vents 42 correspondingly. By controlling the position of each individual control panel 80, an operator can differentially control the aperture ratio of each of the second air holes 42.
指引構件82和83可以分別安裝在排氣板41的上端和下端，來提供一個引導間隔(如一個凹槽)，單獨控制板80的上端和下端可以分別***到該引導間隔中並可以在其中滑動，這樣單獨控制板80就可以自由地在排氣板41的上表面滑動。The indexing members 82 and 83 may be respectively mounted at the upper and lower ends of the exhaust plate 41 to provide a guiding interval (e.g., a groove) into which the upper and lower ends of the individual control plates 80 may be respectively inserted and may be Sliding so that the individual control panel 80 can freely slide on the upper surface of the exhaust panel 41.
所述的指引構件82和83可以以相互間隔的帶狀分別設置在排氣板41的上表面和下表面，為了能夠***到單獨控制板80的上端和下端，它們還設有一個凹槽，單獨控制板80就是通過凹槽安裝到排氣板41的上表面。The indexing members 82 and 83 may be respectively disposed on the upper and lower surfaces of the exhaust plate 41 in a strip shape spaced apart from each other, and are provided with a recess for insertion into the upper and lower ends of the individual control board 80. The individual control board 80 is mounted to the upper surface of the exhaust plate 41 by a groove.
因此，通過移動單獨控制板80的位置，暫態控制每個第二氣孔42的孔徑比例，一位操作者可以能更好地暫態控制氣體流動和流出時的均勻性，同時還能泵排出內室1中的反應氣體和副產物等。Therefore, by moving the position of the individual control board 80, the ratio of the aperture of each of the second air holes 42 is transiently controlled, and an operator can better control the uniformity of gas flow and outflow while temporarily discharging the pump. Reaction gas, by-products, and the like in the inner chamber 1.
所述的單獨控制板80不僅限於如圖4所示的形狀，它也可以設置成開口/關閉的門形被滑動地安裝在第二氣孔42中作為一個共同的開口/關閉的門。The individual control panel 80 is not limited to the shape shown in Fig. 4, but may be arranged such that an open/closed gate shape is slidably mounted in the second air hole 42 as a common open/closed door.
所述的陰極內襯50可以被塗上氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )等優良的耐腐蝕和耐磨損劑。The cathode liner 50 may be coated with an excellent corrosion and wear resistant agent such as alumina (Al 2 O 3 ), yttria (Y 2 O 3 ) or the like.
下面將說明圖1所示結構的操作方法。The operation of the structure shown in Fig. 1 will be explained below.
如果一種反應氣體通過氣體注射器5被注入到內室1中，RF電源7開始應用於陰極裝置10，那麼反應氣體將會誘導放電，並轉變成一種等離子狀態，從而蝕刻底板表面上的特殊薄膜。If a reactive gas is injected into the inner chamber 1 through the gas injector 5, and the RF power source 7 is started to be applied to the cathode device 10, the reaction gas will induce discharge and be converted into a plasma state, thereby etching a special film on the surface of the bottom plate.
同時，陰極內襯50使所述的反應氣體保持持續均勻的氣體流動，於是持續地和副產物一起，如箭頭3所示地同時穿過第一氣孔22和第二氣孔42。然後反應氣體從排氣部分8中排出。At the same time, the cathode liner 50 maintains a constant uniform gas flow of the reactant gas, thereby continuously passing through the first pores 22 and the second pores 42 together with the by-products as indicated by the arrow 3. The reaction gas is then discharged from the exhaust portion 8.
在此，所述的反應氣體穿過第一氣孔22，然後穿過第二氣孔42再次被排出。因此，擋板20和排氣部分40之間形成的一個間隔部分直到了一個緩衝作用，使內室1中的氣體流動和流出可以更均勻地排出。Here, the reaction gas passes through the first air hole 22 and is then discharged again through the second air hole 42. Therefore, a space formed between the baffle 20 and the exhaust portion 40 up to a buffering action allows the gas flow and outflow in the inner chamber 1 to be discharged more uniformly.
因此，通過使等離子體反應之後產生反應氣體、聚合物或顆粒物穿過完整且設有第一氣孔22和第二氣孔42的陰極內襯50被泵排出，本發明通過在擋板20和排氣部分40之間設置間隔部分，產生緩衝作用，從而改進非均勻地排氣。此外，本發明還可以增加地面反作用力，防止陰極內襯50伸出連接到內室1上而產生的等離子閃光現象。並且本發明還能控制第二氣孔42的孔徑比例，從而暫態地控制內室1中等離子體的均勻性。Therefore, the present invention passes through the baffle 20 and the exhaust gas by causing the reaction gas, polymer or particulate matter generated after the plasma reaction to pass through the cathode lining 50 which is completed and provided with the first air hole 22 and the second air hole 42 A spacing portion is provided between the portions 40 to create a cushioning effect to improve non-uniform venting. In addition, the present invention can also increase the ground reaction force to prevent the plasma lining phenomenon caused by the cathode lining 50 extending out of the inner chamber 1. Moreover, the present invention can also control the aperture ratio of the second air hole 42, thereby transiently controlling the uniformity of the plasma in the inner chamber 1.
為了便於說明，上述優選的實施例僅作為一個實施來進行說明，因此它們不能限制權利要求保護的範圍，並且它們均可以應用於某種等離子體真空處理的設置，如濺射或化學氣相沉澱(CVD)。For ease of explanation, the above-described preferred embodiments are described as an implementation only, and thus they are not intended to limit the scope of the claims, and they may all be applied to certain plasma vacuum processing settings such as sputtering or chemical vapor deposition. (CVD).
如上文所述，本發明的效果是可以使底板上的等離子保持均勻性，確保底板的蝕刻均勻性，通過將反應氣體穿過兩層結構的完整陰極內襯被泵排出，減少過程錯誤，並通過防止氣孔間產生等離子體閃光現象來改進處理效率。本發明還有一個效果是可以通過使整塊底板表面上的蝕刻率保持均勻性，使之可以通過控制第二氣孔的孔徑比例來暫態地控制等離子體的均勻性，從而製造出高品質的底板。As described above, the effect of the present invention is to maintain the uniformity of the plasma on the bottom plate, ensure the etching uniformity of the bottom plate, and discharge the reaction gas through the complete cathode lining of the two-layer structure, thereby reducing process errors, and The processing efficiency is improved by preventing a plasma flash phenomenon between the pores. Still another effect of the present invention is that it is possible to temporarily control the uniformity of the plasma by controlling the ratio of the apertures of the second pores by maintaining the uniformity of the etching rate on the surface of the entire substrate, thereby producing a high quality product. Base plate.
雖然本發明已經公開描述了某些優選的實施例，但應理解為只要不違背和超出權利要求所規定的本發明的原理和範圍，本領域的技術人員就可以對其進行各種變化。While the invention has been described with respect to the preferred embodiments of the present invention, it is understood that various modifications may be made by those skilled in the art without departing from the spirit and scope of the invention.
1．．．內室1. . . Interior room
10．．．陰極裝置10. . . Cathode device
20．．．擋板20. . . Baffle
20a．．．固定槽20a. . . Fixed slot
20b．．．組合孔20b. . . Combination hole
20a．．．固定槽20a. . . Fixed slot
20b．．．組合孔20b. . . Combination hole
22．．．第一氣孔twenty two. . . First vent
25．．．插孔25. . . Jack
3．．．箭頭3. . . arrow
30．．．襯墊部分30. . . Pad portion
30b．．．組合孔30b. . . Combination hole
40．．．排氣部分40. . . Exhaust part
40b．．．組合孔40b. . . Combination hole
40a．．．固定槽40a. . . Fixed slot
41．．．排氣板41. . . Exhaust plate
42．．．第二氣孔42. . . Second air hole
45．．．連接板45. . . Connection plate
5．．．氣體注射器5. . . Gas injector
50．．．陰極內襯50. . . Cathode lining
60．．．控制板60. . . Control panel
62．．．控制部分62. . . Control section
63．．．箭頭63. . . arrow
7．．．無線電頻率(RF)電源7. . . Radio frequency (RF) power supply
70．．．墊圈70. . . washer
8．．．排氣部分8. . . Exhaust part
80．．．控制板80. . . Control panel
80的．．．控制板80's. . . Control panel
82．．．指引構件82. . . Guide member
83．．．指引構件83. . . Guide member
下面將結合附圖進一步詳細說明本發明的上述以及其他目的、特徵和優點，其中：The above and other objects, features and advantages of the present invention will be described in more detail in conjunction with the appended claims
圖1是本發明所述的等離子體蝕刻裝置的側視圖；Figure 1 is a side elevational view of the plasma etching apparatus of the present invention;
圖2是本發明一個優選實施例所述的陰極內襯的分解示意圖；2 is an exploded perspective view of a cathode liner according to a preferred embodiment of the present invention;
圖3是本發明一個優選實施例所述的陰極內襯的結構示意圖；3 is a schematic structural view of a cathode liner according to a preferred embodiment of the present invention;
圖4是本發明另一個優選實施例所述的陰極內襯的部分分解示意圖。Figure 4 is a partially exploded perspective view of a cathode liner in accordance with another preferred embodiment of the present invention.
在這些附圖中，同樣的附圖標記代表同樣的元素、特徵和結構。Throughout the drawings, the same reference numerals are used to refer to the same elements, features and structures.
1．．．內室1. . . Interior room
10．．．陰極裝置10. . . Cathode device
20．．．擋板20. . . Baffle
22．．．第一氣孔twenty two. . . First vent
3．．．箭頭3. . . arrow
30．．．襯墊部分30. . . Pad portion
40．．．排氣部分40. . . Exhaust part
40a．．．固定槽40a. . . Fixed slot
42．．．第二氣孔42. . . Second air hole
45．．．連接板45. . . Connection plate
5．．．氣體注射器5. . . Gas injector
50．．．陰極內襯50. . . Cathode lining
7．．．無線電頻率(RF)電源7. . . Radio frequency (RF) power supply
8．．．排氣部分8. . . Exhaust part
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090076043A KR101091309B1 (en) | 2009-08-18 | 2009-08-18 | Plasma etching device |
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| Publication Number | Publication Date |
|---|---|
| TW201108326A TW201108326A (en) | 2011-03-01 |
| TWI401742B true TWI401742B (en) | 2013-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW099127239A TWI401742B (en) | 2009-08-18 | 2010-08-16 | Plasma etching apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110042009A1 (en) |
| KR (1) | KR101091309B1 (en) |
| CN (1) | CN101996842B (en) |
| TW (1) | TWI401742B (en) |
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| KR20050015019A (en) * | 2003-08-01 | 2005-02-21 | 동부아남반도체 주식회사 | Tool For Baffle Plate Of Plasma Etching Chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101091309B1 (en) | 2011-12-07 |
| TW201108326A (en) | 2011-03-01 |
| KR20110018539A (en) | 2011-02-24 |
| CN101996842B (en) | 2013-03-13 |
| US20110042009A1 (en) | 2011-02-24 |
| CN101996842A (en) | 2011-03-30 |
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