CN104103482B - Wafer process cavity - Google Patents
Wafer process cavity Download PDFInfo
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- CN104103482B CN104103482B CN201310116848.6A CN201310116848A CN104103482B CN 104103482 B CN104103482 B CN 104103482B CN 201310116848 A CN201310116848 A CN 201310116848A CN 104103482 B CN104103482 B CN 104103482B
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- chamber body
- guide ring
- gas
- side wall
- gas port
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Abstract
The invention discloses a kind of wafer process cavity, including：Chamber body, mounting disk, drive device and guide ring.Nozzle of air supply, through hole are offered on the wall of chamber body respectively and around the equally distributed gas outlet of through hole.Mounting disk is contained in chamber body, loads one end of the bottom attachment support axle of disk, the other end of support shaft passes from the through hole at the bottom wall of chamber body.Drive device is connected with the other end of support shaft, and drive device driving mounting disk is moved up and down in chamber body, and an external insulating space is formed between drive device and the bottom wall of chamber body.Guide ring is arranged in chamber body around support shaft, the side wall of guide ring offers some gas ports, the side wall of guide ring separate out the gas port being distributed on the farther region of gas port total conducting area be more than separate out gas port closer to region on total conducting area of gas port for being distributed, wherein, the gas in chamber body can only be by being expelled to outside chamber body after the gas port of guide ring from gas outlet.
Description
Technical field
The present invention relates to semiconductor crystal wafer processing unit (plant), more particularly to a kind of process gas distributing homogeneity that can improve
Wafer process cavity.
Background technology
In the techniques such as semiconductor crystal wafer dry etching, vapour deposition, wafer is generally transferred in wafer process cavity
PROCESS FOR TREATMENT is carried out, thus the distribution of process gas will have important shadow to the result of wafer in wafer process cavity
Ring.Constantly reduced with the characteristic size of semiconductor devices, it is increasingly harsh to the requirement on machining accuracy of wafer.
By taking dry etching as an example, as shown in fig. 7, existing wafer process cavity include chamber body 10, mounting disk 31 and
Motor 40.The center of top of chamber body 10 offers nozzle of air supply 11, and the lower section of nozzle of air supply 11 is provided with spray head 20.Mounting
Disk 31 is contained in chamber body 10, for carrying wafer.The bottom of mounting disk 31 is connected with support shaft 32, and support shaft 32 is worn
Cross the bottom center of chamber body 10 and be connected with motor 40, for driving mounting disk 31 to be transported up and down in chamber body 10
It is dynamic.The bottom of chamber body 10 offers gas outlet 12, and gas outlet 12 is uniformly distributed around support shaft 32.Processed when using the wafer
When chamber carries out dry etching to wafer, wafer is transferred in chamber body 10 and is placed on mounting disk 31, and motor 40 drives
Dynamic load puts disk 31 and moves up to spaced apart with spray head 20, and etching gas are equal via nozzle of air supply 11 and spray head 20
It is even to be distributed on wafer, and etching reaction, in the process, remaining etching gas and etching gas and wafer occurs with wafer
The product of reaction generation is discharged via gas outlet 12.After technique terminates, the driving mounting disk 31 of motor 40 moves downward, and wafer is from load
Put and taken away on disk 31.
In above-mentioned wafer process cavity, the distribution of etching gas is due to the effect of spray head 20, generally distribution in the middle part of wafer
Ratio it is more uniform, and the distribution of crystal round fringes etching gas is not only influenceed by the air-flow of spray head 20, but also by gas outlet 12
Locate the influence of exhaust airstream.It is very fast to separate out the flow velocity of the etching gas of the near crystal round fringes of gas port 12, separates out the remote crystalline substance of gas port 12
The flow velocity of the etching gas of rounded edge is slower, so as to cause the etching gas skewness of crystal round fringes, and then causes wafer
The uniformity of etching edge is poor, and the performance and yield to semiconductor devices cause adverse effect.
In order to solve the above-mentioned technical problem, it is common practice to increase the quantity of gas outlet 12, make gas outlet 12 around support
Axle 32 is uniformly distributed, but in actual mechanical process, the difficulty that the quantity of increase gas outlet 12 can cause to install and safeguard increases.
The content of the invention
It is an object of the invention to provide a kind of wafer process cavity that can improve gas distribution uniformity.
To achieve the above object, wafer process cavity provided by the invention, including：Chamber body, mounting disk, drive device
And guide ring.Nozzle of air supply, through hole are offered on the wall of chamber body respectively and around the equally distributed gas outlet of through hole.Load disk
Chamber body is contained in, loads one end of the bottom attachment support axle of disk, the other end of support shaft is at the bottom wall of chamber body
Through hole pass.Drive device is connected with the other end of support shaft, and drive device driving mounting disk is upper and lower in chamber body
Motion, an external insulating space is formed between drive device and the bottom wall of chamber body.Guide ring is arranged at chamber around support shaft
In body, the side wall of guide ring offers some gas ports, and the side wall of guide ring separates out leading of being distributed on the farther region of gas port
Total conducting area of stomata be more than separate out gas port closer to region on total conducting area of gas port for being distributed, wherein, chamber sheet
Gas in body can only be by being expelled to outside chamber body after the gas port of guide ring from gas outlet.
In one embodiment, the top of guide ring is connected by telescopic first pipe sleeve with loading the bottom of disk.
In one embodiment, the side wall for loading disk is provided with baffle plate, and the roof of baffle plate and the side wall for loading disk are fixedly connected,
It is spaced apart between the side wall of baffle plate and the side wall for loading disk, so as to form the accepting groove of ring-type, the top cloth of guide ring
In accepting groove.
In one embodiment, it is provided with telescopic second pipe sleeve between drive device and the bottom wall of chamber body, second
Pipe sleeve is set around support shaft to form the external insulating space.
In one embodiment, the aperture all same for the gas port that the side wall of guide ring opens up, the side wall of guide ring is from chamber
The quantity and density for the gas port being distributed on the farther region in the gas outlet of room body are more than the side wall of guide ring from chamber body
Gas outlet closer to region on the quantity and density of the gas port that are distributed.
In one embodiment, the gas port of guide ring is uniformly distributed in the side wall of guide ring, but the aperture of gas port
Difference, the aperture for the gas port being distributed on the side wall of the guide ring region farther from the gas outlet of chamber body are more than guide ring
Side wall from chamber body gas outlet closer to region on the aperture of gas port that is distributed.
In one embodiment, guide ring is annular shape.
In one embodiment, the gas outlet of chamber body is between through hole and guide ring.
In one embodiment, the lower section of nozzle of air supply is provided with the spray head for being contained in chamber body.
The beneficial effects of the invention are as follows：The present invention in chamber body by setting guide ring, so that in chamber body
Air flow method evenly, especially make the flow velocity of crystal round fringes gas more consistent, improve wafer, particularly crystal round fringes work
The uniformity of skill processing, and then improve the performance and yield of semiconductor devices.
Brief description of the drawings
Fig. 1 discloses the structural representation of the first embodiment of wafer process cavity of the present invention.
Fig. 2 discloses the another structural representation of the first embodiment of wafer process cavity of the present invention.
Fig. 3 discloses the structural representation of an embodiment of the guide ring of wafer process cavity of the present invention.
Fig. 4 discloses the structural representation of the another embodiment of the guide ring of wafer process cavity of the present invention.
Fig. 5 discloses the structural representation of the second embodiment of wafer process cavity of the present invention.
Fig. 6 discloses the another structural representation of the second embodiment of wafer process cavity of the present invention.
Fig. 7 is the structural representation of existing wafer process cavity.
Embodiment
To describe technology contents, construction feature, institute's reached purpose and effect of the present invention in detail, below in conjunction with embodiment
And schema is coordinated to be described in detail.
Fig. 1 and Fig. 2 are referred to, discloses the structural representation of the first embodiment of wafer process cavity of the present invention.The crystalline substance
Circle process cavity includes chamber body 100, and according to different process requirements, temperature control equipment can be set in chamber body 100,
To carry out temperature control to chamber body 100.The roof center of chamber body 100 is provided with nozzle of air supply 101, nozzle of air supply 101
Lower section be provided with and be contained in the spray head 120 of chamber body 100.Mounting disk 130 is contained in chamber body 100, for carrying
Wafer W, one end of the bottom center connection support shaft 140 of mounting disk 130, the other end of support shaft 140 is from being opened in chamber sheet
The through hole 102 in the bottom wall center of body 100 passes, and and drive device, as motor 150 is connected, the driving mounting disk of motor 150
130 move up and down in chamber body 100.The telescopic second pipe is provided between motor 150 and the bottom wall of chamber body 100
Set 160, the second pipe sleeve 160 is set around support shaft 140 to form external insulating space, and the second pipe sleeve 160 can select ripple
Pipe.
The bottom wall of chamber body 100 is provided with guide ring 170, and guide ring 170 is in annular shape, and guide ring 170 is around support shaft 140
It is arranged in chamber body 100.The top of guide ring 170 passes through telescopic first pipe sleeve 180 and the bottom of mounting disk 130
Edge is connected, and the first pipe sleeve 180 can select bellows.The bottom wall of chamber body 100 offers several gas outlets 103, should
Several gas outlets 103 are uniformly distributed around through hole 102, and between through hole 102 and guide ring 170.
Obviously, the position of guide ring 170 and the first pipe sleeve 180 can exchange, i.e., the first pipe sleeve 180 is located at chamber body
100 bottom wall, and guide ring 170 is located at the top of the first pipe sleeve 180, the edge phase of bottom of the guide ring 170 with loading disk 130
Connection.
Referring to Fig. 3, disclose the structural representation of an embodiment of the guide ring 170 of wafer process cavity of the present invention.
In the present embodiment, some gas ports 171 being vertically distributed are offered in the side wall of guide ring 170, the aperture of gas port 171 is equal
It is identical, but the quantity that gas port 171 is distributed in the side wall of guide ring 170 is different with density.Specifically, the side of guide ring 170
The gas port 171 being distributed on the wall region farther from the gas outlet 103 of chamber body 100 is more, the density that gas port 171 is distributed
It is larger, and the side wall of guide ring 170 from chamber body 100 gas outlet 103 closer to region on the gas port 171 that is distributed compared with
Few, the density that gas port 171 is distributed is smaller.
Referring to Fig. 4, disclose the structural representation of the another embodiment of the guide ring 170 of wafer process cavity of the present invention
Figure.In the present embodiment, some gas ports 171 being vertically distributed are offered in the side wall of guide ring 170, gas port 171 is being led
It is uniformly distributed in the side wall of compression ring 170, but the aperture of gas port 171 is different.Specifically, the side wall of guide ring 170 is from chamber sheet
The aperture for the gas port 171 being distributed on the farther region in the gas outlet 103 of body 100 is larger, and the side wall of guide ring 170 is from chamber
The gas outlet 103 of body 100 closer to region on the aperture of gas port 171 that is distributed it is smaller.
When processing wafer W using wafer process cavity of the present invention, wafer W is transferred in chamber body 100 and is placed
On mounting disk 130.Motor 150 driving mounting disk 130 upwards motion until with the spacing certain distance of spray head 120, such as Fig. 2 institutes
Show.Process gas enters in chamber body 100 via nozzle of air supply 101 and spray head 120, and is evenly distributed on wafer W.Work
Skill gas and wafer W react, meanwhile, the product of remaining process gas and reaction generation flow through chamber body 100 side wall and
The gas passage formed between the mounting pipe sleeve 180 of disk 130 and first and the gas port 171 of guide ring 170, finally from gas outlet
103 are expelled to outside chamber body 100.Due to being provided with the first pipe sleeve 180 between guide ring 170 and mounting disk 130 so that residual
Remaining process gas and the product of reaction generation can only be by being expelled to chamber after the gas port 171 of guide ring 170 from gas outlet 103
Outside room body 100, and the guide ring 170 of the present invention can make air flow method in chamber body 100 evenly especially make crystalline substance
The flow velocity of circle W edge gas is more consistent, improves wafer W, the particularly processing of wafer W edges technique uniformity, and then improves
The performance and yield of semiconductor devices.After technique terminates, the driving mounting disk 130 of motor 150 moves downward, and wafer W is from mounting
Taken away on disk 130.
Fig. 5 and Fig. 6 are referred to, discloses the structural representation of the second embodiment of wafer process cavity of the present invention.The crystalline substance
Circle process cavity includes chamber body 200, and according to different process requirements, temperature control equipment can be set in chamber body 200,
To carry out temperature control to chamber body 200.The roof center of chamber body 200 is provided with nozzle of air supply 201, nozzle of air supply 201
Lower section be provided with and be contained in the spray head 220 of chamber body 200.Mounting disk 230 is contained in chamber body 200, for carrying
Wafer W, the side wall of mounting disk 230 are provided with baffle plate 280, and the roof of baffle plate 280 and the side wall for loading disk 230 are fixedly connected, baffle plate
It is spaced apart between 280 side wall and the side wall for loading disk 230, so as to form the accepting groove 281 of ring-type.Load disk 230
Bottom center connection support shaft 240 one end, the other end of support shaft 240 is from the bottom wall center for being opened in chamber body 200
Through hole 202 pass, and and drive device, as motor 250 is connected, the driving mounting disk 230 of motor 250 is in chamber body 200
Interior up and down motion.Telescopic second pipe sleeve 260, the second pipe sleeve are provided between motor 250 and the bottom wall of chamber body 200
260 are set around support shaft 240 to form external insulating space, and the second pipe sleeve 260 can select bellows.
The bottom wall of chamber body 200 is provided with guide ring 270, and guide ring 270 is in annular shape, and guide ring 270 is around support shaft 240
It is arranged in chamber body 200.The top of guide ring 270 is laid in accepting groove 281 all the time.Guide ring 270 and above-mentioned first
The structure of guide ring 170 in embodiment is identical, will not be repeated here.The bottom wall of chamber body 200 offers several gas outlets
203, several gas outlets 203 are uniformly distributed around through hole 202, and between through hole 202 and guide ring 270.
When processing wafer W using wafer process cavity of the present invention, wafer W is transferred in chamber body 200 and is placed
On mounting disk 230.Motor 250 driving mounting disk 230 upwards motion until with the spacing certain distance of spray head 220, such as Fig. 6 institutes
Show, now, the top of guide ring 270 is still laid in accepting groove 281.Process gas is via nozzle of air supply 201 and spray head 220
Into in chamber body 200, and it is evenly distributed on wafer W.Process gas reacts with wafer W, meanwhile, remaining process gas
And the product of reaction generation flows through the gas passage formed between the side wall of chamber body 200 and the side wall of baffle plate 280 and air guide
Ring 270, finally it is expelled to from gas outlet 203 outside chamber body 200.Because baffle plate 280 is to the barrier effect of gas so that remaining
Process gas and reaction generation product can only by being expelled to after guide ring 270 from gas outlet 203 outside chamber body 200,
And the guide ring 270 of the present invention can make air flow method in chamber body 200 evenly especially make wafer W edge gas
Flow velocity it is more consistent, improve wafer W, the particularly uniformity of wafer W edges technique processing, and then improve semiconductor devices
Performance and yield.After technique terminates, the driving mounting disk 230 of motor 250 moves downward, and wafer W takes away from mounting disk 230.
Wafer process cavity of the present invention is applicable not only to the technique such as dry etching, vapour deposition, and it is similar to be also applied for other
Technique process cavity.
In summary, wafer process cavity of the present invention illustrates that oneself is specific, full and accurate by above-mentioned embodiment and correlative type
Disclose correlation technique, those skilled in the art is implemented according to this.And embodiment described above is used only to illustrate
The present invention, rather than for limiting the present invention, interest field of the invention, should be defined by the claim of the present invention.Extremely
The change of the component number or the replacement of equivalence element etc. still should all belong to the interest field of the present invention in this article.
Claims (8)
- A kind of 1. wafer process cavity, it is characterised in that including：Chamber body, nozzle of air supply, through hole is offered respectively and around the equally distributed outlet of through hole on the wall of the chamber body Mouthful；Load disk, the mounting disk is contained in chamber body, loads one end of the bottom attachment support axle of disk, support shaft it is another End passes from the through hole at the bottom wall of chamber body, and the side wall of the mounting disk is provided with baffle plate, roof and the mounting disk of baffle plate Side wall is fixedly connected, spaced apart between the side wall of baffle plate and the side wall for loading disk, so as to form the accepting groove of ring-type；Drive device, the drive device are connected with the other end of support shaft, and drive device driving mounting disk is in chamber body An external insulating space is formed between the bottom wall of interior up and down motion, drive device and chamber body；AndGuide ring, the guide ring are arranged in chamber body around support shaft, are laid at the top of guide ring in the accepting groove, The side wall of guide ring offers some gas ports, and the side wall of wherein guide ring separates out the gas port being distributed on the farther region of gas port Total conducting area be more than separate out gas port closer to region on total conducting area of gas port for being distributed,Wherein, the gas in chamber body can only be by being expelled to outside chamber body after the gas port of guide ring from gas outlet.
- 2. wafer process cavity according to claim 1, it is characterised in that the top of the guide ring passes through telescopic First pipe sleeve is connected with loading the bottom of disk.
- 3. wafer process cavity according to claim 1, it is characterised in that the bottom wall of the drive device and chamber body Between be provided with telescopic second pipe sleeve, the second pipe sleeve is set around support shaft to form the external insulating space.
- 4. wafer process cavity according to claim 1, it is characterised in that the gas port that the side wall of the guide ring opens up Aperture all same, the quantity for the gas port being distributed on the side wall of the guide ring region farther from the gas outlet of chamber body and close Degree more than guide ring side wall from chamber body gas outlet closer to region on the quantity and density of the gas port that are distributed.
- 5. wafer process cavity according to claim 1, it is characterised in that the gas port of the guide ring is in guide ring It is uniformly distributed in side wall, but the aperture of gas port is different, on the side wall of the guide ring region farther from the gas outlet of chamber body The aperture of the gas port of distribution be more than the side wall of guide ring from chamber body gas outlet closer to region on the gas port that is distributed Aperture.
- 6. wafer process cavity according to claim 1, it is characterised in that the guide ring is annular shape.
- 7. wafer process cavity according to claim 1, it is characterised in that the gas outlet of the chamber body is located at through hole Between guide ring.
- 8. wafer process cavity according to claim 1, it is characterised in that the lower section of the nozzle of air supply is provided with and is contained in The spray head of chamber body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310116848.6A CN104103482B (en) | 2013-04-07 | 2013-04-07 | Wafer process cavity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310116848.6A CN104103482B (en) | 2013-04-07 | 2013-04-07 | Wafer process cavity |
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| CN104103482A CN104103482A (en) | 2014-10-15 |
| CN104103482B true CN104103482B (en) | 2017-12-08 |
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| CN201310116848.6A Active CN104103482B (en) | 2013-04-07 | 2013-04-07 | Wafer process cavity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110904437B (en) * | 2018-09-14 | 2024-05-03 | 长鑫存储技术有限公司 | Film preparation equipment and reaction chamber thereof |
| CN111254383B (en) * | 2020-03-25 | 2020-09-25 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment for improving uniformity of reactive sputtering film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101242704A (en) * | 2007-01-30 | 2008-08-13 | 应用材料股份有限公司 | A method of processing workpiece in a plasma reactor with variable height ground return path |
| CN103069560A (en) * | 2010-07-30 | 2013-04-24 | 应用材料公司 | Apparatus for controlling the flow of a gas in a process chamber |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4173389B2 (en) * | 2003-03-19 | 2008-10-29 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US7182816B2 (en) * | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
| CN100369192C (en) * | 2005-12-26 | 2008-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor processing system reaction chamber |
| CN101441981A (en) * | 2007-11-20 | 2009-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Stereo air exhaust loop and plasma processing apparatus |
| KR101091309B1 (en) * | 2009-08-18 | 2011-12-07 | 주식회사 디엠에스 | Plasma etching device |
| US8840725B2 (en) * | 2009-11-11 | 2014-09-23 | Applied Materials, Inc. | Chamber with uniform flow and plasma distribution |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101242704A (en) * | 2007-01-30 | 2008-08-13 | 应用材料股份有限公司 | A method of processing workpiece in a plasma reactor with variable height ground return path |
| CN103069560A (en) * | 2010-07-30 | 2013-04-24 | 应用材料公司 | Apparatus for controlling the flow of a gas in a process chamber |
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| CN104103482A (en) | 2014-10-15 |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. 4 1690 Patentee before: ACM (SHANGHAI) Inc. |