CN101996842B - Plasma etching device - Google Patents
Plasma etching device Download PDFInfo
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- CN101996842B CN101996842B CN2010102472776A CN201010247277A CN101996842B CN 101996842 B CN101996842 B CN 101996842B CN 2010102472776 A CN2010102472776 A CN 2010102472776A CN 201010247277 A CN201010247277 A CN 201010247277A CN 101996842 B CN101996842 B CN 101996842B
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 13
- 239000011148 porous material Substances 0.000 claims description 56
- 238000012856 packing Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 210000000481 breast Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 40
- 210000002381 plasma Anatomy 0.000 description 31
- 238000000034 method Methods 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.
Description
Background of invention
Background technology
Usually can pass through to form several thin layers on a surface for the large-sized wafer of semiconductor device with as the glass substrate that the key components such as liquid crystal display (LCD) are used; and optionally only the part thin layer is removed; form the superfine structure of certain reservation shape, and form annular or the thin thin layer of a labyrinth.
Above-mentioned various processing methods mainly are to be used in those from the outside in the inner room or reative cell of separating wafer or substrate.
Engraving method even more preferably in said method passes into a kind of reacting gas (such as carbon tetrafluoride (CF in inner room or reacting furnace
4), chlorine (Cl
2), hydrogen bromide (HBr) etc.), produce plasma reaction a wafer surface, thereby remove predetermined material.This engraving method be one use a kind of photoresist as a kind of masking agent with the photoresist pattern, form the moment circuit at substrate and optionally remove part, rather than cover fully.
Owing in engraving method, the most important thing is to keep the etch uniformity on the whole backplate surface, therefore need to form uniform plasma in the inner room, these plasmas contact with whole backplate surface, thereby improve the uniformity of etch backplane, prevent from producing in the process mistake.
In a traditional plasma-etching apparatus, uniform in order to make the plasma in the inner room, need to a baffle plate that be provided with a plurality of pores be installed at the excircle of cathode assembly, pump discharge section of installation below inner room, so just can operate this pump discharge portion pump of assigning to and discharge accessory substance, such as a kind of reacting gas in the inner room, a kind of polymer, a kind of particle etc.So traditional plasma-etching apparatus just can be guaranteed by discharging equably reacting gas in the inner room uniformity of plasma.
Namely can constantly flow out equably from inner room such as accessory substances such as reacting gass, so the plasma in the inner room just scatters equably, and can not be subject to the drag effects that reacting gas, accessory substance etc. produce on base plate.
But above-mentioned traditional Etaching device has following problems.
At first, because the reacting gas, polymer or the particle that produce are that pump was arranged a baffle plate in the plasma reaction, this just has an inhomogeneity restriction to the reacting gas of discharge, accessory substance etc.Therefore can't guarantee the inhomogeneity problem of inner room applying plasma with regard to having produced.
Secondly, because baffle plate can not carry out ground connection with inner room effectively, therefore with regard to having produced such problem, namely the plasma spark phenomenon can occur, wherein the plasma between pore anisotropically glistens.
Again, because the control member of control air vent aperture ratio is not set, therefore just produce such problem, namely can not or flow out the rate of etch of controlling instantaneously base plate by the gas flow in the control inner room.
Technical field
The present invention relates to a kind of plasma-etching apparatus that can process large-size crystals.The invention particularly relates to a kind of plasma-etching apparatus that can improve plasma uniformity, it is inserted into a complete cathode inner lining the cathode assembly from the outside, wherein said cathode inner lining is at two-layer a plurality of the first pores and the second pore of being provided with, they are the interval each other, make reaction gas physical efficiency in the reative cell keep simultaneously the uniformity of gas flow and exhaust-gas flow, prevent that the bottom of the complete cathode inner lining of ground connection from making reative cell generation phosphere.
Summary of the invention
A preferred enforcement aspect of the present invention is to solve at least one the problems referred to above and/or shortcoming, and at least a following advantage is provided.Therefore, a preferred enforcement aspect of the present invention is the uniformity that keeps gas flow and outflow in the inner room, discharge a kind of reacting gas, a kind of polymer or a kind of particle that produces in the plasma reaction by pump, they pass complete cathode inner lining, and this liner is at two-layer a plurality of the first pores and the second pore of being provided with.
Another preferably enforcement aspect of the present invention is to improve the ground reaction force of cathode inner lining, thereby prevents from producing between pore the plasma spark phenomenon.
It is by realization the aperture ratio of the second pore to be controlled to guarantee the etch uniformity of whole backplate surface that the present invention also has a preferred enforcement aspect, and controls the uniformity of plasma by the gas flow in the inner room and outflow realization Instantaneous Control.
As disclosing a kind of plasma-etching apparatus as described in one aspect of the present invention.Device comprises an inner room, a cathode assembly and a complete cathode inner lining.Described inner chamber has formed a plasma reaction interval.The cathode assembly that is arranged on the interior mid portion of inner room can support a base plate.Described complete cathode inner lining is at two-layer a plurality of the first pores and the second pore of being provided with,, they are the interval each other, keeps uniformity thereby make the gas flow in the inner room and flow out, and this cathode inner lining is inserted into the cathode assembly from the outside, and its bottom links to each other with the inner surface of inner room.
Described cathode inner lining comprises a baffle plate that is provided with radially a plurality of the first pores, the liner part of the regular length that upper end links to each other with the baffle plate inner periphery, a discharge portion that is arranged on the liner part lower end, is connected and is provided with radially a plurality of the second pores with inner room.
A plurality of first pores of baffle plate are comprised of the groove that a plurality of spaces and each spacing all equate.
There is the lower surface of some places and liner part to be spirally connected on the baffle plate inner periphery.
Described discharge portion comprises an exhaustion plate, on this exhaustion plate with fixed intervals be provided with a plurality of the second pores, these second pores all are identical with gradient between the outer direction, described discharge portion comprises that also an excircle along the exhaustion plate bottom extends to the connecting plate of outside in addition, and this plate and inner room are spirally connected.
A control board that is arranged on the exhaustion plate upper surface can slide rotation, and this control board is provided with control section corresponding to a plurality of and a plurality of the second pores, and they also can control the aperture ratio of the second pore simultaneously.
The upper surface of exhaustion plate is provided with polylith Separation control plate, and they can slide on the top of exhaustion plate, thereby controls the aperture ratio of each pore in those second pores.
Described device also comprises a packing ring, and it can prevent that reacting gas from leaking at the bottom side surface of connecting plate.
Scribble aluminium oxide (Al on the described cathode inner lining
2O
3) and yittrium oxide (Y
2O
3).
Description of drawings
Further describe above-mentioned and other objects, features and advantages of the present invention below in conjunction with accompanying drawing, wherein:
Fig. 1 is the end view of plasma-etching apparatus of the present invention;
Fig. 2 is the decomposing schematic representation of the described cathode inner lining of a preferred embodiment of the invention;
Fig. 3 is the structural representation of the described cathode inner lining of a preferred embodiment of the invention;
Fig. 4 is the decomposed schematic diagram of the described cathode inner lining of another preferred embodiment of the present invention
In these accompanying drawings, element, feature and the structure of same Reference numeral TYP.
Embodiment
Specify the preferred embodiments of the present invention below in conjunction with accompanying drawing.In order to make following explanation more succinct, will in explanation, omit wherein known structure and structure.
Specific descriptions of the present invention are finished in connection with accompanying drawing.
Fig. 1 is the end view of plasma-etching apparatus of the present invention.
As shown in Figure 1, plasma etching of the present invention comprises an inner room 1, a cathode assembly 10 and a cathode inner lining 50.
Described inner room 1 is separated out the space of a plasma reaction internally.At the crown center of inner room 1 gas syringe 5 that leads to reacting gas has been installed.Be provided with a discharge portion 8 in the middle of the bottom of inner room 1, be used for discharging certain byproduct of reaction, such as reacting gas, polymer, particle etc.
In addition, a side of inner room 1 also with external ground, by a kind of radio frequency (RF) power supply 7 reacting gas in the inner room 1 is converted into a kind of plasmoid.
Described cathode assembly 10 is that RF power supply 7 forms an electrode, support simultaneously a wafer or base plate (not shown), so it is the middle part that vertically is arranged at inner room 1.
Described cathode assembly 10 links to each other with RF power supply 7, and firmly is installed in the upper surface of base plate.
Therefore, RF power supply 7 is removed the reacting gas that passes into inner room 1 by electric current, and reacting gas is converted into a kind of plasma state, comes the etch processes backplate surface by plasma again.
Described cathode assembly 10 can comprise that is used for the stably electrostatic chuck (not shown) of fixed base plate, and a flue (not shown) can be installed, the gases such as helium (He) circulate cooling bottom plate in this root flue.
Described electrostatic chuck is a kind of by form electrical affinity between electrode surface and object, holds the device of an object.
Reacting gas passes and the gas syringe 5 of cathode assembly 10 centers on the same line, enters into the inside of inner room 1, makes on the backplate surface and can be formed uniformly plasma.
Therefore, RF power supply 7 is converted into a kind of plasma state with the reacting gas in the inner room 1, then react with backplate surface, and etch backplane optionally, the discharge portion 8 that passes at last inner room 1 bottom flows out to the outside.
Described cathode inner lining 50 inserts from the outside and is installed in the cathode assembly 10.Relate to below in the content of Fig. 2 and Fig. 3 and will further describe described cathode inner lining 50.
Fig. 2 is the decomposing schematic representation of the described cathode inner lining 50 of a preferred embodiment of the invention.Fig. 3 is the structural representation of the described cathode inner lining 50 of a preferred embodiment of the invention.
Described cathode inner lining 50 is at two-layer a plurality of the first pores 22 and the second pore 42 of being provided with,, they are the interval each other, makes the gas flow in the inner room and flow out to keep uniformity.Described cathode inner lining 50 comprises a baffle plate 20, a liner part 30 and a discharge portion 40.
Therefore, the external peripheral surface of the inner circumferential surface of baffle plate 20 and cathode assembly 10 arranges accordingly.The inner circumferential surface of the external peripheral surface of baffle plate 20 and inner room 1 arranges accordingly.Therefore, baffle plate 20 is the spacer portion offices that vertically are installed between the inner circumferential surface of the external peripheral surface of cathode assembly 10 and inner room 1.
The excircle of baffle plate 20 is not limited only to circle, and it also can be the shapes definite according to the inner circumferential surface shape of inner room 1 such as rectangle.
Therefore, the external peripheral surface of baffle plate 20 is connected with the inner circumferential surface contact of inner room 1, and the inner circumferential surface of jack 25 is connected with the external peripheral surface contact of cathode assembly 10.Therefore, the reaction compartment in the inner room 1 is separated into the upper and lower.
Compartment of terrain, circumference place along jack 25 on the baffle plate 20 is provided with a plurality of combination bore 20b, uses these combination bore 20b holddown groove 20a can be connected and is fixed to the upper surface of liner part 30.
The first pore 22 is arranged in the baffle plate 20.
It is the grooves with regular length that reaction gas is known from experience the first pore 22 that partly passes, and they are arranged to radial with fixing interval.
The first pore 22 is not limited only to be arranged to flute profile, also can be arranged to the shape that other is suitable for the plasma environment condition.
Described liner part 30 is inserted in the cathode assembly 10 from the outside, and this part is the circle of the equal opening in two ends up and down.
Described liner part 30 is provided with an inner circumferential surface that contacts accordingly with the external peripheral surface of cathode assembly 10.In addition, the combination bore 20b of the upper surface of this liner part 30 and baffle plate 20 is provided with a plurality of combination bore 30b accordingly.So the liner part 30 lower circumferential surface by jack 25 on holddown groove 20a and the baffle plate 20 contacts and is connected.
Described discharge portion 40 be arranged on described liner 30 below.
Described discharge portion 40 makes reacting gas, accessory substance etc. pass baffle plate 20, and finally is discharged to the discharge portion 8 of inner room 1.Described discharge portion 40 comprises an exhaustion plate 41 that stretches out from the bottom of liner part 30 and one the outwardly directed connecting plate 45 of external peripheral surface from the bottom of exhaustion plate 41.
Described exhaustion plate 41 is outward-dipping in the excircle of liner part 30 lower ends with fixing angle.Described the second pore 42 all arranges with fixing interval.
Described the second pore 42 is not limited to have shape as shown in the figure, and it also can be configured to various shapes, such as circle, long hole shape etc.
Described a plurality of connecting plate 45 vertically extends a fixing distance respectively from the excircle of exhaustion plate 41 lower ends.These connecting plates 45 are provided with a plurality of combination bore 40b, and they and holddown groove 40b combination are provided for fixedly inner room 1.
So, because holddown groove 40a stably is combined to connecting plate 45 on the inner room 1, increased in addition a ground reaction force, therefore described cathode inner lining 50 can prevent in traditional plasma-etching apparatus that baffle plate not quiet earth makes the plasma spark phenomenon that occurs in the pore.
A packing ring 70 has been installed between connecting plate 45 and the inner room 1, has been prevented the inessential leakage of reacting gas.
Described packing ring 70 can be the circular ring metal ring.
Can with exhaustion plate 41 control board 60 be set accordingly in the outside of exhaustion plate 41 in addition, make it the rotation of to slide.
Described control board 60 is that rotary sliding ground arranges along exhaustion plate 41, and wherein control board 60 inserts on the liner part 30 from the outside, and is installed in the upper surface of exhaustion plate 41.Described control board 60 is configured to the annular corresponding with exhaustion plate 41.
With certain interval, be provided with accordingly a plurality of control sections 62 with the second pore 42 on the exhaustion plate 41 on the described control board 60
Therefore, as shown in Figure 3, if rotation control board 60, the overlapping area that namely can regulate itself and control section 62 is so it is equal to control simultaneously the aperture ratio of each the second pore 42 on the exhaustion plate 41.
That is, a bit manipulation person rotates described control board 60 according to the indication of arrow 63 with suitable angle, comes alternative condition so just can control the aperture ratio of the second pore 42, and gas flow and outflow in the inner room 1 are controlled in the pump exhaust instantaneously simultaneously.
Shown in Figure 4 is the described cathode inner lining 50 of another preferred embodiment of the present invention.Except the control board structure, the structure of present embodiment is all identical with above-described embodiment, therefore below an improved structure will only be described.
As shown in the figure, a plurality of independent control boards 80 are installed in the upper surface of exhaustion plate 41.
Described a plurality of independent control board 80 is corresponding with the quantity of the second pore 42 on the exhaustion plate 41, and they can control the aperture ratio of each the second pore 42.
Specifically, described independent control board 80 is installed slidably along exhaustion plate 41, and they can open or close the second pore 42 accordingly.By controlling the position of each independent control board 80, a bit manipulation person can control the aperture ratio of each the second pore 42 variantly.
Guide member 82 and 83 can be installed in respectively the top and bottom of exhaustion plate 41, a guide interval (such as a groove) is provided, separately the top and bottom of control board 80 can be inserted into respectively in this guide interval and can slide therein, so independent control board 80 just can be freely in the upper surface slide of exhaustion plate 41.
Described guide member 82 and 83 can be separately positioned on the band shape of space upper surface and the lower surface of exhaustion plate 41, in order to be inserted into the top and bottom of independent control board 80, they also are provided with a groove, and control board 80 is exactly the upper surface that is installed to exhaustion plate 41 by groove separately.
Therefore, position by mobile independent control board 80, the aperture ratio of each the second pore 42 of Instantaneous Control, a bit manipulation person is Instantaneous Control gas flow and the uniformity when flowing out better, simultaneously can also pump discharges reacting gas in the inner room 1 and accessory substance etc.
Described independent control board 80 is not limited only to shape as shown in Figure 4, and the door shape that it also can be arranged to opening/close is slidingly mounted in the second pore 42 door as a common opening/close.
Described cathode assembly 50 can be coated with aluminium oxide (Al
2O
3), yittrium oxide (Y
2O
3) etc. good corrosion-resistant and wear-resistant dose.
The below will illustrate the method for operation of structure shown in Figure 1.
If a kind of reacting gas is injected in the inner room 1 by gas syringe 5, RF power supply 7 begins to be applied to cathode assembly 10, and reacting gas will induced discharge so, and is transformed into a kind of plasmoid, thus the lip-deep Special Film of etch backplane.
Simultaneously, cathode inner lining 50 makes described reacting gas keep continuing uniform gas flow, then constantly with accessory substance together, ground as shown in arrow 3 passes the second pore 22 and the second pore 42 simultaneously.Then reacting gas is discharged from discharge portion 8.
At this, described reacting gas passes the first pore 22, then passes the second pore 42 and again is discharged from.Therefore, the compartment that forms between baffle plate 20 and the discharge portion 40 until a cushioning effect, make the gas flow in the inner room 1 and flow out and can discharge more equably.
Therefore, produce reacting gas, polymer or particle after the plasma reaction and pass cathode inner lining 50 complete and that be provided with the first pore 22 and the second pore 42 and discharged by pump by making, the present invention is by arranging compartment between baffle plate 20 and discharge portion 40, produce cushioning effect, thereby improve anisotropically exhaust.In addition, the present invention can also increase ground reaction force, prevents that cathode inner lining 50 from stretching out the plasma phosphere that is connected on the inner room 1 and produces.And the present invention can also control the aperture ratio of the second pore 42, thereby controls instantaneously the uniformity of inner room 1 applying plasma.
For convenience of explanation; above-mentioned preferred embodiment only describes as an enforcement; therefore they can not limit the scope of claim protection, and they all can be applied to the vacuum treated setting of certain plasma, such as sputter or chemical gaseous phase deposition (CVD).
As indicated above, effect of the present invention is to make the plasma on the base plate keep uniformity, guarantee the etch uniformity of base plate, discharged by pump by the complete cathode inner lining that reacting gas is passed double-layer structure, minimizing process mistake, and by preventing that producing the plasma spark phenomenon between pore improves treatment effeciency.It is to keep uniformity by making the rate of etch on the monoblock backplate surface that the present invention also has an effect, makes it and can control instantaneously the uniformity of plasma by the aperture ratio of controlling the second pore, thereby produce high-quality base plate.
Although the present invention has openly described some preferred embodiment, be interpreted as if without prejudice to the principle and scope of the present invention that exceed the claim defined, those skilled in the art just can carry out various variations to it.
Claims (8)
1. plasma-etching apparatus is characterized in that comprising:
The inner room that the space is provided for plasma reaction;
A cathode assembly that is arranged at inner room bosom part and support baseboard; With
A complete cathode inner lining, this cathode inner lining is at two-layer a plurality of the first pores and the second pore of being provided with, these pores mutually compartment of terrain arrange, make the gas flow in the inner room and flow out and keep uniformity, and cathode inner lining is inserted on the cathode assembly from the outside, links to each other with the bottom of inner surface in the inner room;
Described cathode inner lining comprises:
A baffle plate which is provided with a plurality of the first pores that are radial arrangement;
The inner liner portion of a regular length, its lower end links to each other with the inner periphery of baffle plate; With
A discharge portion that is arranged on the inner liner portion bottom and links to each other with inner room which is provided with a plurality of the second pores that are radial arrangement.
2. device as claimed in claim 1, the first pore that it is characterized in that described baffle plate comprises the groove of a plurality of spaces, they are radial arrangement.
3. device as claimed in claim 2 is characterized in that having the upper surface of some places and inner liner portion to be spirally connected on the inner periphery of described baffle plate.
4. device as claimed in claim 1 is characterized in that described discharge portion comprises:
An exhaustion plate is provided with a plurality of the second pores that pass exhaustion plate with fixing interval on it, and described the second pore is outward-dipping with fixing angle; With
Excircle along exhaustion plate lower end connecting plate protruding and that be spirally connected with inner room.
5. device as claimed in claim 4 is characterized in that the upper surface of exhaustion plate is provided with the control board of the rotation of sliding, and this control board is provided with a plurality of control sections corresponding with a plurality of the second pores, and they control the aperture ratio of the second pore together.
6. device as claimed in claim 4 is characterized in that described exhaustion plate upper surface is provided with the independent control board of polylith, and they slide on exhaustion plate top, thereby control the aperture ratio of each the second pore.
7. device as claimed in claim 4 is characterized in that this device also comprises a packing ring, and it prevents that reacting gas from leaking at the connecting plate lower surface.
8. device as claimed in claim 1 is characterized in that scribbling on the described cathode inner lining aluminium oxide (Al
2O
3), yittrium oxide (Y
2O
3).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0076043 | 2009-08-18 | ||
| KR1020090076043A KR101091309B1 (en) | 2009-08-18 | 2009-08-18 | Plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101996842A CN101996842A (en) | 2011-03-30 |
| CN101996842B true CN101996842B (en) | 2013-03-13 |
Family
ID=43604347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102472776A Active CN101996842B (en) | 2009-08-18 | 2010-07-30 | Plasma etching device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20110042009A1 (en) |
| KR (1) | KR101091309B1 (en) |
| CN (1) | CN101996842B (en) |
| TW (1) | TWI401742B (en) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| JP5424744B2 (en) * | 2009-07-01 | 2014-02-26 | 株式会社フェローテック | Divided annular rib plasma processing equipment |
| CN102420120B (en) * | 2011-11-04 | 2016-08-03 | 中国科学院微电子研究所 | Air inlet structure |
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| WO2009097181A2 (en) * | 2008-01-28 | 2009-08-06 | Applied Materials, Inc. | Etching chamber having flow equalizer and lower liner |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101091309B1 (en) | 2011-12-07 |
| KR20110018539A (en) | 2011-02-24 |
| US20110042009A1 (en) | 2011-02-24 |
| CN101996842A (en) | 2011-03-30 |
| TWI401742B (en) | 2013-07-11 |
| TW201108326A (en) | 2011-03-01 |
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