TWI388046B - 覆晶封裝及半導體晶片封裝 - Google Patents

覆晶封裝及半導體晶片封裝 Download PDF

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Publication number
TWI388046B
TWI388046B TW098115685A TW98115685A TWI388046B TW I388046 B TWI388046 B TW I388046B TW 098115685 A TW098115685 A TW 098115685A TW 98115685 A TW98115685 A TW 98115685A TW I388046 B TWI388046 B TW I388046B
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package
semiconductor die
semiconductor
redistribution layer
bumps
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TW098115685A
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English (en)
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TW200950041A (en
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Nan Cheng Chen
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Mediatek Inc
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

覆晶封裝及半導體晶片封裝
本發明涉及半導體封裝技術，更具體地，涉及至少一種覆晶(flip-chip)封裝及半導體晶片封裝，可應用於具有多個接腳(pin)數目之情形。
在本領域中，為了將裸晶設置於基板上，可經由位於裸晶及基板上之多個接合焊點來實現，在此過程中，可應用多種晶片封裝技術，如球柵陣列(Ball Grid Array，BGA)、線結合、覆晶等。為了確保電子產品或通信裝置之小型化及功能多樣化，半導體封裝需要尺寸小、多接腳連接、高速率及多功能化。
輸入輸出(Input-Output，I/O)接腳數目之增加與高性能IC需求之增加，促進了覆晶封裝技術之發展。覆晶技術使用位於晶片之多個接合焊墊上之多個凸塊(bumps)與封裝媒體直接互連。晶片透過最短路徑面向接合封裝媒體。該技術不僅可應用於單晶片封裝，也可應用於更高整合位準之尺寸較大之封裝，以及可容納幾個晶片以形成較大功能單元之更加精密之基板。覆晶技術使用區域陣列，具有實現與裝置之互連密度最高與封裝之互連電感較低之優點。
第1圖所示為傳統晶片級覆晶封裝(Flip-Chip Chip Scale Package，以下簡稱FCCSP)之截面示意圖。如第1圖所示，FFCSP 100包含裸晶101，裸晶101倒置(face-down)於載體120之上表面(top surface)並透過多個焊點凸塊(solder bump)102連接至載體120。於載體120之底面上提供多個焊錫球(solder ball)122用以連接電路板。典型的該封裝構造在區域陣列或週邊凸塊排佈中使用共晶錫/鉛覆晶互連(eutectic tin/lead flip-chip interconnect)技術，以取代標準之線結合互連。由於線結合迴路之消除，使與裸晶之連接電感較低，同時，走線密度(routing density)之增加優化了臨界高頻信號線路之電氣路徑。
第2圖所示為傳統覆晶球柵陣列(Flip-Chip Ball Grid Array，以下簡稱FCBGA)封裝之截面示意圖。如第2圖所示，FCBGA封裝200包含裸晶201，裸晶201倒置於晶片載體基板220之上表面並透過多個焊點凸塊202連接晶片載體基板220。底膠(underfill)203填充裸晶201與晶片載體基板220之頂面之間的空隙。晶片載體基板220可包含多層走線(trace)，該多層走線之不同層透過盲孔(blind via)222或埋孔(buried via)224互相連接在一起。例如，盲孔222可藉由雷射鑽孔以實現較高密度。於晶片載體基板220之底面提供多個焊錫球226。FCBGA封裝200允許高階封裝解析度之設計，對於當前或未來高速網路及數位電視系統而言，高階封裝解析度是理想的。例如，為了維持信號完整性，該封裝具有低電感、低介電損耗及阻抗匹配之特點。
然而，傳統覆晶技術面臨基板上之凸塊間距限制的挑戰。另外，高性能FCBGA封裝因昂貴的晶片載體基板(典型的晶片載體基板包含1+2+1層構建材料或更多層構建材料)而價格不菲。由於覆晶技術之發展與凸塊間距縮小遠比裸晶縮小與接腳數目之增長慢得多，因此，基板之凸塊間距成為覆晶線路圖的瓶頸所在。即便未來裸晶縮小將超越基板載體之凸塊間距解析度的縮小。為了克服此技術差距，矽中介層(silicon interposer)技術與矽晶貫通穿孔(Through Silicon Via，TSV)技術是目前唯一且昂貴的解決方案。因此，產業界強烈需求一種改進型覆晶封裝技術，以符合成本效益並解決基板上之凸塊間距限制。
有鑒於此，本發明之目的之一在於提供至少一種覆晶封裝及半導體晶片封裝，用以較低成本解決封裝技術中基板上之凸塊間距限制之問題。
本發明所披露了一種覆晶封裝，包含：一封裝載體，具有上表面及下表面；一半導體裸晶，包含一裸晶面與一裸晶邊緣，該半導體裸晶覆晶設置於該封裝載體之該上表面，其中，該裸晶面上設置多個接合焊墊；一重佈線層結構，位於該半導體裸晶與該封裝載體之間，該重佈線層結構包含一重新佈局金屬層(re-routed metal layer)，其中，該重新佈局金屬層中之至少一部分凸出於該裸晶邊緣；以及多個凸塊，排佈於該重佈線層結構之上，該多個凸塊用以經由該封裝載體電性連接於該半導體裸晶。
本發明另提供一種半導體晶片封裝，包含：一半導體裸晶，於該半導體裸晶之裸晶面上包含多個接合焊墊；一膠體(mold cap)，包覆該半導體裸晶之一部分；一重新分佈層，覆蓋該裸晶面及用於重新分佈之該膠體之一部分，其中，該重新分佈層外擴(fan out)該多個接合焊墊；多個凸塊，位於該重新分佈層之上；一基板，包含兩金屬佈線層，該兩佈線金屬層分別位於該基板之一上表面與一下表面，其中，該多個凸塊設置於該上表面；以及多個焊錫球，位於該基板之該下表面。
本發明另提供一種半導體晶片封裝，包含：一半導體裸晶，包含多個接合焊墊，該多個接合焊墊設置於該半導體裸晶之裸晶面上；一膠體，用以包覆該半導體裸晶之一部分；一重新分佈層，覆蓋該裸晶面及該膠體之一部分，用以重新分佈，其中，該重新分佈層外擴該多個接合焊墊；多個凸塊，位於該重新分佈層之上；以及一導線架(leadframe)，其中該半導體裸晶設置於該導線架之上。
本發明另提供一種半導體晶片封裝，包含：一封裝載體，具有一上表面及一下表面；一外擴晶圓級裝置，設置於該封裝載體之該上表面；以及一底膠，該底膠位於該封裝載體與該外擴晶圓級裝置之間。
本發明另提供一種半導體晶片封裝，包含：一封裝載體，具有一上表面與一下表面；一外擴晶圓級裝置，設置於該封裝載體之該上表面；以及一膠餅，用以包覆該外擴晶圓級裝置，以及該膠餅也用以填充該封裝載體與該外擴晶圓級裝置間之空隙。
本發明利用WLCSP技術並於晶片上外擴小間距之接腳或凸塊，以便外擴接合焊墊滿足當前之覆晶處理之最小間距需求。封裝載體用以機械支持外擴重佈線層結構，該重佈線層結構具有超過三百個或更多個外擴接合焊墊。因此，利用本發明所提供的覆晶封裝及半導體晶片封裝，有效解決了封裝技術中基板上之凸塊間距限制之問題，並達到較佳之成本效益。
在說明書及申請專利範圍當中使用了某些詞彙來指稱特定的組件。所屬領域中具有通常知識者應可理解，硬體製造商可能會用不同的名詞來稱呼同一個組件。本說明書及申請專利範圍並不以名稱的差異來作為區分組件的方式，而是以組件在功能上的差異來作為區分的準則。在通篇說明書及申請專利範圍當中所提及的「包含」為一開放式的用語，故應解釋成「包含但不限定於」。此外，「耦接」一詞在此包含任何直接及間接的電性連接手段。因此，若文中描述一第一裝置耦接於一第二裝置，則代表該第一裝置可直接電性連接於該第二裝置，或透過其他裝置或連接手段間接地電性連接至該第二裝置。說明書後續描述為實施本發明之較佳實施方式，然該描述乃以說明本發明之一般原則為目的，並非用以限定本發明之範圍。本發明之保護範圍當視所附之申請專利範圍所界定者為準。
本發明有關於應用於具有多個接腳數目之覆晶封裝，本發明提供的覆晶封裝可包含晶圓級封裝(Wafer-Level Packaging，以下簡稱WLP)技術。晶圓級封裝指於晶圓級別的封裝積體電路，不同於晶圓切割後先將每個獨立單元封裝再進行組合之傳統處理。由於WLP最後的封裝實際上與裸晶具有相同之尺寸，因此，WLP實質上係晶片級封裝(Chip-Scale Packaging，CSP)技術。此外，晶圓級封裝為晶圓級製程整合、封裝、測試及燒入作準備，並為從矽開始到客戶出貨之製程實現最終流線化(streamlining)操作提供便利。
本發明利用WLCSP技術並於晶片上外擴小間距之接腳或凸塊，以便外擴接合焊墊滿足當前之覆晶處理之最小間距需求。封裝載體用以機械支持外擴重佈線層結構，該重佈線層結構具有超過三百個外擴接合焊墊。
第3圖所示為依據本發明之一實施例之外擴WLP(fan-out wafer level package)1a之截面示意圖。如第3圖所示，該外擴WLP 1a包含半導體裸晶10及膠體16，其中，膠體16包覆(encapsulate)半導體裸晶10之一部分，例如，半導體裸晶10之整個表面，除形成接合焊墊11之裸晶面外，均被膠體16所包覆。以及，直接於該裸晶面上及膠體16之部分表面上提供重佈線層結構12。
重佈線層結構12包含一改道金屬層，該重新佈局金屬層重新分佈位於半導體裸晶10之裸晶面上之多個接合焊墊11，以形成位於絕緣層上之多個外擴接合焊墊15。然後，焊錫球14附著於多個接合焊墊15。若第3圖之該外擴WLP 1a使用覆晶技術直接設置於印刷電路板(Printed Circuit Board，PCB)上，例如，典型的FCCSP需要0.5mm之球間距(ball pitch)P，則將外擴WLP 1a之最大焊錫球數目限制在300或更少。
第4圖所示為製造第3圖所示之外擴WLP 1a之典型步驟之流程圖。外擴WLP 1a可經由如下幾個步驟製造：
步驟52：晶圓切割與分離。
步驟54：晶圓重新配置。
步驟56：重新分佈。
步驟58：植入球及封裝分離。
需要理解，外擴WLP 1a可經由其他方法來製造。使用重新分佈技術之不同公司使用不同材料及處理來製造外擴WLP。但是，所需實現步驟大致相同。
與傳統晶圓製造處理相比，重新分佈層及凸塊技術增加一個額外的步驟，即在位於晶圓上之每個元件(例如晶片)上沉積(deposit)多層薄膜金屬重新佈局及互連系統。該額外步驟係在元件本身製造中使用類似並兼容光刻(photolithography)及薄膜沉積(thin film deposition)技術來實現的。互連之額外位準(additional level)將每個晶片之週邊多個接合焊墊重新分佈至多個凸塊底墊(Underbump Metal，以下簡稱UBM)焊墊之區域陣列。該多個凸塊底墊焊墊最終配置於晶片表面之上。多個焊錫球或多個凸塊用於將晶片連接至應用電路板，實質上，該多個焊錫球或多個凸塊位於這些凸塊底墊焊墊(例如外擴接合焊墊15)之上。
舉例來說，覆蓋(put over)晶圓之第一層用來封裝該元件，該第一層通常為基於苯並環丁烯(benzocyclobutane，以下簡稱BCB)之聚合物電介質(polymer dielectric)，用以將元件電路與重佈線系統(例如，重佈線層結構)相隔離。重佈線金屬層(rewiring metallization layer)通常為銅(Cu)、鋁(Al)或特別製造之合金，該重佈線金屬層沉積於該電介質上。接著，該重佈線金屬層被另一BCB電介質所覆蓋，該另一BCB電介質作為防焊緣漆(solder mask)。然後，凸塊底墊覆蓋實質上由多個焊錫球占據之位置。當凸塊底墊附著該多個焊錫球後，使用覆晶技術將外擴WLP設置於電路板上。
第5圖所示為依據本發明之另一實施例之覆晶封裝1之截面示意圖。如第5圖所示，覆晶封裝1包含半導體裸晶10，半導體裸晶10倒置於封裝載體20之上表面(chip side)20a。例如，封裝載體20為一封裝基板，該封裝基板包含金屬佈線層22a和金屬佈線層22b，金屬佈線層22a和金屬佈線層22b分別排佈於上表面20a及下表面(opposite side)20b。金屬佈線層22a和金屬佈線層22b透過多個導通孔(plated through hole)124彼此互連，依據本發明，多個導通孔124經由機械式鑽孔方法形成於封裝載體20中。此外，需要理解，封裝載體20可包含多層金屬佈線層，例如四層或六層。在另一實施例中，封裝載體20可為導線架。
本發明之優點包含，相比雷射鑚孔封裝載體(如第2圖所示之晶片或體基板220)，由於藉由應用機械式鑚孔後之封裝載體20，因此，晶片封裝之成本大幅降低。另外，如第3圖所示之原始外擴WLP對I/O接腳數目有限制(一般情況下少於300個)。本實施例可突破這個限制。
如第5圖所示，半導體裸晶10可以為重新分佈之多接腳數目晶片，例如，具有超過300個I/O接腳。藉由舉例之方式，覆晶封裝1特別適用於至少500個I/O接腳數目之晶片。典型地，對於這樣的多接腳數目應用，昂貴的晶片載體基板與1+2+1層構建材料(build up)或昂貴的矽中介層之合併是不可避免的。本發明之該實施例可使得如此昂貴的晶片載體基板與1+2+1層構建材料或昂貴的矽中介層之消除變為現實。
與本實施例密切相關之一個特征在於，直接在半導體裸晶10之裸晶面上提供至少一個重佈線層結構12，以及膠體16包覆半導體裸晶10之一部分，例如，半導體裸晶10除形成多個接合焊墊11外之全部表面。依據本發明之實施例，重佈線層結構12包含絕緣層12a、重新佈局金屬層12b及防焊層(solder resist layer)12c。重新佈局金屬層12b之至少一部分(如數字標號13所指示)突出了裸晶邊緣10a。也就是，重新佈局金屬層12b橫向延伸出了膠體16之表面，膠體16實質上與裸晶面10b共面，其中，多個接合焊墊11形成於裸晶面10b之上。
重新佈局金屬層12b重新分佈設置於半導體裸晶10之裸晶面上之多個接合焊墊11，以在絕緣層12a上形成多個外擴接合焊墊15，從而突破基板上之凸塊間距限制。值得注意的是，多個外擴接合焊墊15可具有不同類型與選擇，本發明之範圍並不以此為限。上述「在絕緣層12a上」在此指多個外擴接合焊墊15排佈於絕緣層12a之表面以及，例如，當絕緣層12a沉積後形成該多個結合焊墊15。
本發明之實施例可解決因裸晶尺寸小而導致之另一凸塊間距限制之問題，這是由於重佈線層結構12於晶圓處理及製造期間形成，因此，重佈線層結構12提供一更具彈性之間距尺度。相應地，由於重佈線層結構12之外擴結構，增加了最大焊墊數目。
半導體裸晶10透過重新佈局金屬層12b及多個焊點凸塊14電性連接至封裝載體20，其中多個焊點凸塊14排佈於重佈線層結構12中定義之多個外擴接合焊墊15之上。焊點凸塊14可包含共晶(例如，63%Sn，37%Pb)、高鉛(例如，95%Pb，2.5%Ag)或無鉛(例如，97.5%Sn，2.5%Ag)成分。依據本發明之實施例，多個焊點凸塊14間之凸塊間距P1 大致為0.15-0.3mm。在下表面20b，多個焊錫球24之球間距P2 大致為0.5mm，例如，FCCSP使用之電路板。
覆晶凸塊有多種處理方法。以焊點凸塊為例，UBM經由蝕刻(sputtering)、鍍層(plating)或類似方式設置於接合焊墊之上。設置UBM之處理移除了接合焊墊上之保護氧化層(passivating oxide layer)，並定義了焊錫附著區域。接著，焊錫可經由適當之方法沉積於UBM之上，例如，蒸發、電鍍、電極網印或針孔沉積(needle-depositing)等。
焊點凸塊裸晶10經由焊點回焊(solder reflow)附著於封裝載體20之上。此後，底膠30添加於重新布線層結構12與封裝載體20之間。底膠30可為特別設計之環氧化物(epoxy)，用以填充重佈線層結構12與封裝載體20之間的空隙，並包覆多個焊點凸塊14。該設計用於控制因半導體裸晶10與封裝載體20間之熱膨脹差而導致之焊接結合處之壓力。一旦固化，則底膠30吸收壓力，從而降低多個焊點凸塊14上之壓力，進而延長最終封裝之壽命。
一方面，半導體晶片封裝(如覆晶封裝1)包含半導體裸晶10、膠體16及重新分佈層(例如，重佈線層結構12)，其中，於半導體裸晶10之裸晶面上具有多個接合焊墊11，膠體16包覆半導體裸晶10之一部分，以及重新分佈層覆蓋該裸晶面及膠體16之一部分，用於重新分佈。該重新分佈層外擴多個接合焊墊11。多個凸塊14排佈於該重新分佈層之上。半導體晶片封裝更包含基板(如封裝載體20)，該基板包含金屬佈線層22a與金屬佈線層22b，金屬佈線層22a與金屬佈線層22b分別位於上表面20a與下表面20b。多個凸塊14設置於上表面20a之上。焊錫球24排佈於基板(如封裝載體20)之下表面20b。
另一方面，半導體晶片封裝(如覆晶封裝1)包含封裝載體20，封裝載體20包含金屬佈線層22a與金屬佈線層22b，金屬佈線層22a與金屬佈線層22b分別排佈於封裝載體20之上表面20a與下表面20b。外擴晶圓級裝置(例如，外擴WLP 1a)設置於封裝載體20之上表面20a。底膠30應用於封裝體在20與外擴晶圓級裝置之間。
對於多接腳數目之晶片，為了降低覆晶封裝方案之成本，本發明之實施例使用具有成本競爭力之包含兩層金屬佈線層、機械式鑚孔之基板(例如，封裝載體20)，來取代造價較高的方法，例如，多接腳數目晶片中使用昂貴的矽中介層。本發明之實施例之特征包含於裸晶面上直接提供重佈線層結構12。重佈線層結構12之重新佈局金屬層12b重新分佈位於該裸晶面上之多個接合焊墊11，並形成多個外擴接合焊墊15，從而突破WLP中基板上之凸塊間距限制。
第6圖所示為依據本發明之另一實施例之覆晶封裝2之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第6圖所示，覆晶封裝2具有與第5圖所示之覆晶封裝1極其相似之結構，所不同之處包含經由移除膠體16之一部分，露出了與裸晶面10b相對之底面10c，使得膠體16之頂面16a與底面10c齊平。於半導體裸晶10之露出之底面10c之上可設置外部散熱槽(external heatsink)2a。經由此操作，提高了散熱效率。當然，如第6圖所示之外部散熱槽2a僅用以舉例說明，並非用以限定本發明之變形或其他替代方法。也就是說，可適當設置於露出之底面10c上之其他類型之散熱裝置，也可應用於本實施例。
第7圖所示為依據本發明之另一實施例之覆晶封裝3之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第7圖所示，同樣地，覆晶封裝3具有類似於第5圖所示之覆晶封裝1之結構，所不同之處包含露出了與裸晶面10b相對之底面10c。底面10c係經由移除膠體16之一上半部分而露出的，使得膠體16之頂面16a實質上與底面10c齊平。覆晶封裝3更包含散熱層(heat-spreading layer)3a，散熱層3a設置於半導體裸晶10之露出之底面10c與膠體16之頂面16a之上。
第8圖所示為依據本發明之另一實施例之覆晶封裝4之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第8圖所示，覆晶封裝4具有類似於第5圖所示之覆晶封裝1之結構，所不同之處包含露出了與裸晶面10b相對之底面10c。底面10c係經由移除或切除膠體16之一上半部分而露出，使得膠體16之頂面16a實質上與底面10c齊平。於露出之底面10c之上設置散熱遮罩(heat-spreading lid)302。當設置散熱遮罩302之前，可將散熱膠層(layer of thermal glue)304設置於露出之底面10c之上。在另一實施例中，散熱遮罩302可直接與露出之底面10c相接觸。
第9圖所示為依據本發明之另一實施例之覆晶封裝5之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第9圖所示，覆晶封裝5具有類似於第5圖所示之覆晶封裝1之結構，所不同之處包含露出了與裸晶面10b相對之底面10c。底面10c係經由移除或切除膠體16之一上半部分而露出，使得膠體16之頂面16a實質上與底面10c齊平。覆晶封裝5包含遮罩半導體裸晶10之一單體、無縫式散熱片(heat spreader)402。同樣地，當設置散熱片402之前，可將散熱膠層304應用於露出之底面10c之上。在另一實施例中，散熱遮罩402可直接與露出之底面10c相接觸。
第10圖所示為依據本發明之另一實施例之覆晶封裝6之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第10圖所示，覆晶封裝6具有類似於第5圖所示之覆晶封裝1之結構，所不同之處包含露出了與裸晶面10b相對之底面10c。底面10c係經由移除或切除膠體16之一上半部分而露出，使得膠體16之頂面16a實質上與底面10c齊平。覆晶封裝6包含遮罩半導體裸晶10之一分體式散熱片500，如第6圖所示，散熱片500包含支架502與遮罩504兩部分。同樣地，當設置散熱片402之前，可將散熱膠層304應用於露出之底面10c之上。在另一實施例中，遮罩504可直接與露出之底面10c相接觸。
第11圖所示為依據本發明之另一實施例之覆晶封裝7之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第11圖所示，由於多個焊點凸塊14之凸塊間距P1 增大，因此，在一些情形下，節省了底膠。相反，膠餅(molding compound)600包覆外擴WLP 1a，並填充重佈線層結構12與封裝載體20之上表面20a間之空隙602，從而形成晶片級無底膠覆晶封裝(mold-only flip-chip CSP)。
第12圖所示為依據本發明之另一實施例之覆晶封裝8之截面示意圖，其中，相同之數字標號代表類似之層、元件或區域。如第12圖所示，為了露出與裸晶面10b相對之底面10c，移除或切除了膠餅600之上半部分與膠體16之上半部分。膠體16之頂面16a實質上與底面10c齊平。於底面10c之上設置外部散熱槽2a。
上述之實施例僅用來例舉本發明之實施樣態，以及闡釋本發明之技術特徵，並非用來限制本發明之範疇。任何習知技藝者可依據本發明之精神輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利範圍應以申請專利範圍為準。
100．．．FFCSP
101、201．．．裸晶
102、202．．．焊點凸塊
120．．．載體
122、226、14、24．．．焊錫球
200．．．FCBGA封裝
203、30．．．底膠
220．．．晶片載體基板
222．．．盲孔
224．．．埋孔
1a．．．外擴WLP
10．．．半導體裸晶
11．．．接合焊墊
12．．．重佈線層結構
12a．．．絕緣層
12b．．．重新佈局金屬層
12c．．．防焊層
15．．．外擴接合焊墊
16．．．膠體
16a．．．頂面
52~58．．．步驟
1、2、3、4、5、6、7、8．．．覆晶封裝
10a．．．裸晶邊緣
10b．．．裸晶面
10c．．．底面
13．．．重新佈局金屬層12b之至少一部分
124．．．導通孔
20．．．封裝載體
20a．．．上表面
20b．．．下表面
22a、22b．．．金屬佈線層
P、P2 ．．．球間距
P1 ．．．凸塊間距
2a．．．外部散熱槽
3a．．．散熱層
302．．．散熱遮罩
304．．．散熱膠層
402、500．．．散熱片
502．．．支架
504．．．遮罩
600．．．膠餅
602．．．空隙
第1圖所示為傳統FCCSP之截面示意圖。
第2圖所示為傳統FCBGA封裝之截面示意圖。
第3圖所示為依據本發明之一實施例之外擴WLP 1a之截面示意圖。
第4圖所示為製造第3圖所示之外擴WLP 1a之典型步驟之流程圖。
第5圖所示為依據本發明之另一實施例之覆晶封裝1之截面示意圖。
第6圖所示為依據本發明之另一實施例之覆晶封裝2之截面示意圖。
第7圖所示為依據本發明之另一實施例之覆晶封裝3之截面示意圖。
第8圖所示為依據本發明之另一實施例之覆晶封裝4之截面示意圖。
第9圖所示為依據本發明之另一實施例之覆晶封裝5之截面示意圖。
第10圖所示為依據本發明之另一實施例之覆晶封裝6之截面示意圖。
第11圖所示為依據本發明之另一實施例之覆晶封裝7之截面示意圖。
第12圖所示為依據本發明之另一實施例之覆晶封裝8之截面示意圖。
1．．．覆晶封裝
1a．．．外擴WLP
10．．．半導體裸晶
10a．．．裸晶邊緣
10b．．．裸晶面
11．．．接合焊墊
12．．．重佈線層結構
12a．．．絕緣層
12b．．．重新佈局金屬層
12c．．．防焊層
124．．．導通孔
13．．．重新佈局金屬層12b之至少一部分
14、24．．．焊錫球
15．．．外擴接合焊墊
16．．．膠體
20．．．封裝載體
20a．．．上表面
20b．．．下表面
22a、22b．．．金屬佈線層
P1 ．．．凸塊間距
P2 ．．．球間距

Claims (19)

  1. 一種覆晶封裝，包含：一封裝載體，具有一上表面及一下表面；一半導體裸晶，包含一裸晶面與一裸晶邊緣，該半導體裸晶倒置於該封裝載體之該上表面，其中，該裸晶面上設置多個接合焊墊；一重佈線層結構，位於該半導體裸晶與該封裝載體之間，並直接形成於該裸晶面上，該重佈線層結構包含一重新佈局金屬層，其中，該重新佈局金屬層中之至少一部分凸出於該裸晶邊緣；以及多個凸塊，排佈於該重佈線層結構與該封裝載體之間，該多個凸塊用以將該封裝載體電性連接於該半導體裸晶。
  2. 如申請專利範圍第1項所述之覆晶封裝，其中，該封裝載體為一基板，該基板包含兩金屬佈線層，該兩金屬佈線層分別排佈於該封裝載體之該上表面與該下表面。
  3. 如申請專利範圍第2項所述之覆晶封裝，其中，該兩金屬佈線層經由多個金屬穿孔互相電性連接，該多個金屬穿孔經由機械式鑽孔方法形成於該封裝載體中。
  4. 如申請專利範圍第1項所述之覆晶封裝，其中，該重新佈局金屬層重新分佈位於該半導體裸晶之該裸晶面上之該多個接合焊墊，以形成多個外擴接合焊墊，以及該多個凸塊分別設置於該多個外擴接合焊墊之上。
  5. 如申請專利範圍第1項所述之覆晶封裝，更包含一底膠，該底膠位於該重佈線層結構與該封裝載體之間。
  6. 如申請專利範圍第1項所述之覆晶封裝，更包含一膠體，該膠體包覆該半導體裸晶。
  7. 如申請專利範圍第1項所述之覆晶封裝，其中，該封裝載體為一導線架。
  8. 如申請專利範圍第1項所述之覆晶封裝，其中，設置於該重佈線層結構上之該多個凸塊具有一0.15-0.3mm之凸塊間距。
  9. 一種半導體晶片封裝，包含：一半導體裸晶，包含多個接合焊墊，該多個接合焊墊設置於該半導體裸晶之一裸晶面上；一膠體，用以包覆該半導體裸晶之一部分；一重新分佈層，直接形成於該裸晶面上，覆蓋該裸晶面及該膠體之一部分，用以重新分佈，其中，該重新分佈層外擴該多個接合焊墊；一基板，包含兩金屬佈線層，該兩佈線金屬層分別位於該基板之一上表面與一下表面；多個凸塊，位於該重新分佈層與該基板之間，並設置於該基板之該上表面；以及多個焊錫球，位於該基板之該下表面。
  10. 如申請專利範圍第9項所述之半導體晶片封裝，其中，該兩金屬佈線層經由多個金屬穿孔互相電性連接，該多個金屬穿孔經由機械式鑽孔方法形成。
  11. 如申請專利範圍第9項所述之半導體晶片封裝，更包含 一底膠，該底膠位於該重新分佈層與該基板之間。
  12. 如申請專利範圍第9項所述之半導體晶片封裝，其中，位於該重新分佈層上之該多個凸塊具有一0.15-0.3mm之凸塊間距，以及位於該基板之該下表面之該多個焊錫球具有一0.5mm之球間距。
  13. 一種半導體晶片封裝，包含：一半導體裸晶，包含多個接合焊墊，該多個接合焊墊設置於該半導體裸晶之一裸晶面上；一膠體，用以包覆該半導體裸晶之一部分；一重新分佈層，直接形成於該裸晶面上，覆蓋該裸晶面及該膠體之一部分，用以重新分佈，其中，該重新分佈層外擴該多個接合焊墊；一導線架，其中該半導體裸晶設置於該導線架之上；以及多個凸塊，位於該重新分佈層與該導線架之上。
  14. 一種半導體晶片封裝，包含：一封裝載體，具有一上表面及一下表面；一外擴晶圓級裝置，設置於該封裝載體之該上表面；以及一底膠，該底膠位於該封裝載體與該外擴晶圓級裝置之間；其中，該外擴晶圓級裝置包含：一半導體裸晶；一膠體，用以包覆該半導體裸晶之一部分；以及一重新分佈層，直接形成於該半導體裸晶表面以及該膠體之該部分表面上，用於外擴該半導體裸晶之多個 接合焊墊。
  15. 如申請專利範圍第14項所述之半導體晶片封裝，其中該外擴晶圓級裝置更包含多個凸塊，該多個位凸塊於該重新分佈層之上，該多個凸塊具有一0.15-0.3mm之凸塊間距。
  16. 如申請專利範圍第14項所述之半導體晶片封裝，其中該封裝載體為一基板，該基板包含兩金屬佈線層，該兩金屬佈線層分別位於該封裝載體之該上表面與該下表面，其中，該多個凸塊排佈於該上表面。
  17. 一種半導體晶片封裝，包含：一封裝載體，具有一上表面與一下表面；一外擴晶圓級裝置，設置於該封裝載體之該上表面；以及一膠餅，用以包覆該外擴晶圓級裝置，以及該膠餅也用以填充該封裝載體與該外擴晶圓級裝置間之空隙；其中，該外擴晶圓級裝置包含：一半導體裸晶；一膠體，用以包覆該半導體裸晶之一部分；以及一重新分佈層，直接形成於該半導體裸晶表面以及該膠體之該部分表面上，用以外擴該半導體裸晶之多個接合焊墊。
  18. 如申請專利範圍第17項所述之半導體晶片封裝，其中該外擴晶圓級裝置更包含排佈於該重新分佈層上之多個凸塊，以及該多個凸塊具有一0.15-0.3mm之凸塊間距。
  19. 如申請專利範圍第17項所述之半導體晶片封裝，其中 該封裝載體為一導線架或一基板，該基板包含兩金屬佈線層，該兩金屬佈線層分別排佈於該封裝載體之該上表面與該下表面。
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