TWI382074B - Adhesive sheet for dicing - Google Patents
Adhesive sheet for dicing Download PDFInfo
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- TWI382074B TWI382074B TW095112613A TW95112613A TWI382074B TW I382074 B TWI382074 B TW I382074B TW 095112613 A TW095112613 A TW 095112613A TW 95112613 A TW95112613 A TW 95112613A TW I382074 B TWI382074 B TW I382074B
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- dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Laminated Bodies (AREA)
Description
本發明是有關於一種切割用黏著片、使用該黏著片的被切斷體的加工方法、及通過該加工方法得到的被切斷體小片。 The present invention relates to an adhesive sheet for dicing, a method for processing a cut body using the adhesive sheet, and a small piece of the cut body obtained by the processing method.
以往，以矽、鎵、砷等為材料的半導體晶圓被以大直徑的狀態製造出後，被切斷分離(dicing)成元件小片，並被轉移到固定工程。此時，半導體晶圓以黏貼並保持於切割用黏著片(以下稱“黏著片”)的狀態，被施加切割工程、清洗工程、擴張工程、拾取工程、固定工程這樣的各工程。作為上述黏著片，將丙烯酸系黏著劑等塗敷於由塑膠薄膜組成的基體材料上，通常使用形成1~200μm左右厚的黏著劑層而成的黏著劑。 Conventionally, a semiconductor wafer made of germanium, gallium, arsenic or the like has been manufactured in a large diameter state, and then diced into small pieces and transferred to a fixed process. At this time, the semiconductor wafer is adhered to and held by the dicing adhesive sheet (hereinafter referred to as "adhesive sheet"), and various processes such as cutting, cleaning, expansion, picking, and fixing are applied. As the adhesive sheet, an acrylic adhesive or the like is applied to a base material composed of a plastic film, and an adhesive which forms an adhesive layer having a thickness of about 1 to 200 μm is usually used.
在上述切割工程中，由邊旋轉邊移動的圓刀切斷半導體晶圓後，形成半導體晶片。在該工程中，被稱為進行切入到保持著半導體晶圓的黏著片的基體材料內部的、全切割的切斷方式正成為主流。 In the above-described cutting process, a semiconductor wafer is formed by cutting a semiconductor wafer by a circular knife moving while rotating. In this project, a full-cut cutting method called "cutting into the base material of the adhesive sheet holding the semiconductor wafer is becoming mainstream.
在上述擴張工程中，將確保充分的晶片間隔並易於進行隨後進行的拾取半導體晶片為目的來進行黏著片的擴張。但是，在全切割的切斷方法中，為了進行切入直到黏著片的內部、並較大地擴張黏著片，有時黏著片從該切入部分斷裂。其結果，存在在拾取工程中，無法拾取半導體晶片、而使操作性及成品率顯著降低的問題。 In the above expansion process, the expansion of the adhesive sheet is performed for the purpose of ensuring sufficient wafer spacing and facilitating subsequent picking up of the semiconductor wafer. However, in the cutting method of the full cutting, in order to perform the cutting into the inside of the adhesive sheet and to largely expand the adhesive sheet, the adhesive sheet may be broken from the cut portion. As a result, there is a problem that the semiconductor wafer cannot be picked up in the pick-up process, and the operability and the yield are remarkably lowered.
為了避免上述問題，在以往的黏著片中，使用由聚氯乙烯構成的基體材料薄膜。但是，那樣的黏著片以黏貼於半導體晶圓的狀態被長時間保管時，聚氯乙烯中包含的可塑劑等添加劑移動到黏著劑層後，引起黏著性的降低。其結果，有時會產生切割時的晶片飛出和拾取時的剝離不良。 In order to avoid the above problem, a film of a base material made of polyvinyl chloride is used in the conventional adhesive sheet. However, when such an adhesive sheet is stored for a long period of time in a state of being adhered to a semiconductor wafer, an additive such as a plasticizer contained in the polyvinyl chloride moves to the adhesive layer to cause a decrease in adhesiveness. As a result, there is a case where the wafer is ejected at the time of cutting and the peeling failure at the time of picking up occurs.
為了解決黏著片上的黏著特性隨時間變化，例如，下述日本特開平5-156214號公報中公開有基體材料薄膜使用乙烯甲基丙烯酸甲酯共聚物薄膜的晶圓黏著用黏著片。另外，在下述日本特開平11-43656號公報中公開有基體材料使用具有不拉伸聚丙烯層的薄膜的晶圓黏著用黏著片。但是，這些在先技術沒有對擴張工程中的作業性作任何考慮。而且，在使用公開於這些在先技術的各晶圓黏著用黏著片而進行半導體晶圓的加工時，的確在擴張工程中發生了晶圓黏著用黏著片的斷裂。 In order to solve the problem of the adhesion of the adhesive sheet on the adhesive sheet, the adhesive sheet for wafer adhesion using the ethylene methyl methacrylate copolymer film is disclosed in the following JP-A-5-156214. In the following, Japanese Laid-Open Patent Publication No. Hei 11-43656 discloses an adhesive sheet for wafer adhesion using a film having a non-stretched polypropylene layer as a base material. However, these prior art techniques do not give any consideration to the workability in the expansion project. Further, when the semiconductor wafer was processed using the adhesive sheets for wafer adhesion disclosed in these prior art, it was confirmed that the adhesive sheet for wafer adhesion was broken during the expansion process.
另外，在下述日本特開2000-124169號公報公開有：包括基體材料片和設置於其一側表面上的黏著劑層的切割帶，該切割帶具有由與黏著劑層接觸的上部層、設置於該上部層之下的中間層和設置於該中間層之下的下部層構成的基體材料片。另外，在該切割帶中，對於由彈性模量與層厚之積表示的抗拉伸性(拉伸彈性模量(young modulus)與厚度之積)，該日本特開2000-124169號公報的意思是：上部層的抗拉伸性(A)、中間層的抗拉伸性(B)和下部層的抗拉伸性(C)滿足B<AC的關係。根據該日本特開2000-124169號公報，其記載有：在切割中的擴張工程中， 能夠不受黏著劑的彈性模量的影響而均勻且充分地擴大切割線的間隔，同時不易產生切割線處的斷裂。但是，即使是上述結構的切割帶，在構成基體材料的各層的斷裂伸長率不充分、或斷裂強度與拉伸彈性模量相比不足夠大時，在擴張工程中有時也產生切割帶斷裂。即，即使是上述結構的切割帶，也沒有充分地防止擴張工程時的斷裂。 In addition, Japanese Laid-Open Patent Publication No. 2000-124169 discloses a dicing tape comprising a base material sheet and an adhesive layer provided on one surface thereof, the dicing tape having an upper layer in contact with the adhesive layer, and a setting A sheet of base material composed of an intermediate layer below the upper layer and a lower layer disposed below the intermediate layer. Further, in the dicing tape, the tensile resistance (the product of the tensile modulus and the thickness) expressed by the product of the elastic modulus and the layer thickness is disclosed in Japanese Laid-Open Patent Publication No. 2000-124169. Means: the tensile resistance of the upper layer (A), the tensile resistance of the intermediate layer (B) and the tensile resistance of the lower layer (C) satisfy B<A The relationship between C. According to Japanese Laid-Open Patent Publication No. 2000-124169, it is described that in the expansion process during dicing, the interval between the dicing lines can be uniformly and sufficiently enlarged without being affected by the elastic modulus of the adhesive, and the cutting line is less likely to be generated. The break at the place. However, even in the dicing tape of the above structure, when the elongation at break of each layer constituting the base material is insufficient, or the breaking strength is not sufficiently large as compared with the tensile elastic modulus, dicing tape breakage sometimes occurs in the expansion process. . That is, even in the dicing tape of the above structure, the fracture at the time of expansion engineering is not sufficiently prevented.
本發明是鑒於上述問題點而提出的，其目的在於，提供可以完全防止擴張工程中的斷裂的切割用黏著片、使用該切割用黏著片的被切斷體的加工方法及通過該方法得到的被切斷體小片。 The present invention has been made in view of the above problems, and an object thereof is to provide a dicing adhesive sheet which can completely prevent breakage in an expansion process, a method of processing a cut body using the dicing adhesive sheet, and a method for obtaining the same by the method A small piece of the body being cut.
本發明人為了解決上述以往問題，對切割用黏著片、使用該切割用黏著片的被切斷體的加工方法及通過該方法得到的被切斷體小片進行了研究。其結果，發現了通過將基體材料的拉伸物理性質值控製在規定的範圍內，從而能夠完全防止在以往的切割用黏著片中成為問題的擴張工程時的斷裂，並完成了本發明。 In order to solve the above conventional problems, the inventors of the present invention have studied the dicing adhesive sheet, the method for processing the object to be cut using the dicing adhesive sheet, and the small piece to be cut obtained by the method. As a result, it has been found that by controlling the tensile physical property value of the base material within a predetermined range, it is possible to completely prevent breakage during expansion work which is a problem in the conventional adhesive sheet for dicing, and completed the present invention.
即，為解決上述課題，本發明中的切割用黏著片是採用在基體材料的至少一面具有黏著劑層的結構的、在加工被切斷體時使用的切割用黏著片。其特徵在於，上述基體材料的拉伸彈性模量是50~250MPa，斷裂伸長率大於等於200%，下列式中表示的耐切入度大於等於2.5。 In other words, in order to solve the problem, the dicing adhesive sheet according to the present invention is a dicing adhesive sheet which is used when the object to be cut is processed by using an adhesive layer on at least one surface of the base material. It is characterized in that the base material has a tensile elastic modulus of 50 to 250 MPa, an elongation at break of 200% or more, and a cut-resistant degree represented by the following formula of 2.5 or more.
(公式1) 耐切入度=(上述基體材料的斷裂強度)/(上述基體材料的拉伸伸長率為30%時的拉伸強度) (Formula 1) Penetration resistance = (breaking strength of the above-mentioned base material) / (tensile strength when the tensile strength of the above-mentioned base material is 30%)
在上述結構中，上述基體材料的屈服點伸長率最好是大於等於30%。在此，基體材料的屈服點伸長率是從屈服點讀取的，該屈服點是在通過在規定條件下以JIS K 7162為標準的拉伸試驗而得到的S-S曲線中的屈服點。 In the above structure, the yield point elongation of the base material is preferably 30% or more. Here, the yield point elongation of the base material is read from the yield point, which is the yield point in the S-S curve obtained by a tensile test using JIS K 7162 as a standard under predetermined conditions.
另外，在上述結構中，上述基體材料最好含有選自由聚丙烯系熱塑性彈性體、聚丙烯酸樹脂及酯系熱塑性彈性體構成的群中的至少1種。 Further, in the above configuration, the base material preferably contains at least one selected from the group consisting of a polypropylene-based thermoplastic elastomer, a polyacrylic resin, and an ester-based thermoplastic elastomer.
另外，在上述結構中，上述黏著劑層的厚度最好是1μm~上述基體材料厚度的1/3。 Further, in the above configuration, the thickness of the adhesive layer is preferably from 1 μm to 1/3 of the thickness of the base material.
另外，在上述結構中，上述黏著劑層最好包括放射線固化型黏著劑。 Further, in the above configuration, the adhesive layer preferably includes a radiation curable adhesive.
另外，為了解決上述課題，本發明中的被切斷體的加工方法的特徵在於具有下面工程：將切割用黏著片黏貼於被切斷體的工程，其中的切割用黏著片是採用在基體材料的至少一面具有黏著劑層的結構的、在加工被切斷體時使用的切割用黏著片，上述基體材料的拉伸彈性模量是50~250MPa，斷裂伸長率大於等於200%，下面公式中表示的耐切入度大於等於2.5；切斷上述被切斷體而形成被切斷體小片的工程，在該工程中從該被切斷體側到上述切割用黏著片的基體材料進行該切斷；使上述切割用黏著片擴張，擴大黏接固定於該切割用黏著片的各被切斷體小片的間隔的工程；將帶有上述黏著劑層的被切斷體小片從上述基體材料剝離的工程。 Further, in order to solve the above problems, the method for processing a body to be cut according to the present invention is characterized in that the following method is employed: a method of adhering a cutting adhesive sheet to a body to be cut, wherein the cutting adhesive sheet is used in a base material. a cutting adhesive sheet for use in processing a cut body having at least one side of an adhesive layer, wherein the base material has a tensile elastic modulus of 50 to 250 MPa and an elongation at break of 200% or more, in the following formula The cut resistance shown is 2.5 or more; the cutting of the cut body is performed to form a small piece of the cut body, and the cutting is performed from the cut body side to the base material of the cutting adhesive sheet in the process. And expanding the dicing adhesive sheet to enlarge the interval of bonding the fixed pieces of the dicing piece to the dicing adhesive sheet; and peeling the cut piece having the adhesive layer from the base material engineering.
(公式2) 耐切入度=(上述基體材料的斷裂強度)/(上 述基體材料的拉伸伸長率為30%時的拉伸強度)。 (Formula 2) Penetration resistance = (the breaking strength of the above-mentioned base material) / (on The tensile strength at which the tensile elongation of the base material is 30%).
在上述方法中，上述基體材料的屈服點伸長率最好大於等於30%。 In the above method, the yield point elongation of the base material is preferably 30% or more.
另外，在上述方法中，上述基體材料最好含有選自由聚丙烯系熱塑性彈性體、聚丙烯酸樹脂及酯系熱塑性彈性體構成的族群中的至少1種。 Further, in the above method, the base material preferably contains at least one selected from the group consisting of a polypropylene-based thermoplastic elastomer, a polyacrylic resin, and an ester-based thermoplastic elastomer.
另外，在上述方法中，最好是上述黏著劑層的厚度是1μm~上述基體材料厚度的1/3。 Further, in the above method, it is preferable that the thickness of the adhesive layer is from 1 μm to 1/3 of the thickness of the base material.
另外，在上述方法中，上述黏著劑層最好包括放射線固化型黏著劑。 Further, in the above method, the adhesive layer preferably includes a radiation curable adhesive.
另外，在上述方法中，作為被切斷體可以使用半導體元件。 Further, in the above method, a semiconductor element can be used as the object to be cut.
另外，為了解決前述課題，本發明中的被切斷體小片的特徵在於，該被切斷體小片通過上述的被切斷體的加工方法製作而成。 Further, in order to solve the above-described problems, the small piece to be cut according to the present invention is characterized in that the piece to be cut is produced by the above-described method of processing the object to be cut.
根據本發明，通過使基體材料的拉伸彈性率是50~250MPa、使斷裂伸長率大於等於200%、並使耐切入度為大於等於2.5，從而防止例如在切口進入切割用黏著片及進行擴張時，該切割用黏著片斷裂。其結果，能夠較好地進行拾取被切斷體小片，並能謀求操作性及成品率的提高。 According to the present invention, by setting the tensile modulus of the base material to 50 to 250 MPa, the elongation at break to 200% or more, and the penetration resistance to 2.5 or more, it is possible to prevent, for example, entering the cutting adhesive sheet and expanding it in the slit. At the time, the cutting adhesive sheet is broken. As a result, it is possible to pick up the small pieces to be cut, and to improve the operability and the yield.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。 The above and other objects, features and advantages of the present invention will become more <RTIgt;
下面，參照附圖對本發明進行說明。如圖1所示，本發明的切割用黏著片11是在基體材料薄膜(基體材料)1的至少一面具有黏著劑層2的結構。本申請的發明人對基體材料薄膜的物理性能、切割作為被切斷體的半導體晶圓(半導體元件)時的切割條件以及擴張切割用黏著片時的擴張條件進行了研究，並闡明了引起切割用黏著片11的斷裂的機理。首先，用拉伸試驗機對基體材料薄膜1進行拉伸試驗，並對拉伸伸長率及拉伸強度進行了測定。其結果，得到了如圖2所示的Strain-Strength曲線(以下稱“S-S曲線”)。圖2是表示拉伸伸長率和拉伸強度關係的曲線圖。基體材料1在通過施加拉伸載荷而被擴張時，在用圖2的S-S曲線中的斷裂強度及斷裂伸長率表示的點處斷裂。擴張時發生的切割後的切割用黏著片11的斷裂也是由上述基體材料薄膜1的斷裂而產生的。 Hereinafter, the present invention will be described with reference to the drawings. As shown in Fig. 1, the dicing adhesive sheet 11 of the present invention has a structure in which an adhesive layer 2 is provided on at least one surface of a base material film (base material) 1. The inventors of the present application studied the physical properties of the base material film, the cutting conditions when cutting the semiconductor wafer (semiconductor element) as the object to be cut, and the expansion conditions when expanding the adhesive sheet for dicing, and clarified that the cutting was caused. The mechanism of the fracture of the adhesive sheet 11 is used. First, the base material film 1 was subjected to a tensile test using a tensile tester, and tensile elongation and tensile strength were measured. As a result, a Strain-Strength curve (hereinafter referred to as "S-S curve") as shown in Fig. 2 was obtained. Fig. 2 is a graph showing the relationship between tensile elongation and tensile strength. When the base material 1 is expanded by applying a tensile load, it is broken at a point indicated by the breaking strength and the breaking elongation in the S-S curve of Fig. 2 . The rupture of the dicing adhesive sheet 11 after the cleavage which occurs at the time of expansion is also caused by the rupture of the above-mentioned base material film 1.
切割用黏著片11的擴張按例如圖3(a)及圖3(b)所示那樣進行。圖3(a)是表示黏貼於半導體晶圓的切割用黏著片11的擴張的樣子的說明圖，圖3(b)是表示多個半導體晶片(被切斷體小片)及切割環被黏接固定於切割用黏著片11的樣子的俯視圖。通過切割半導體晶圓而形成的多個半導體晶片12被黏接固定於切割用黏著片11上。另外，在形成各半導體晶片12的區域的外側，其切割環13通過規定的區域自黏接固定有多個半導體晶片12的區域被黏接固定於切割用黏著片11。擴張根據需要對切割用黏著片11照射放射線後，使用以往習知的擴張裝置來進行。擴張裝置具有環狀 的外環14，其能夠通過切割環13將切割用黏著片11壓下到下方；內環15，其直徑比該外環14的直徑小、並支承切割用黏著片11。 The expansion of the dicing adhesive sheet 11 is performed as shown, for example, in Figs. 3(a) and 3(b). Fig. 3 (a) is an explanatory view showing a state in which the dicing adhesive sheet 11 adhered to the semiconductor wafer is expanded, and Fig. 3 (b) is a view showing that a plurality of semiconductor wafers (a small piece to be cut) and a dicing ring are bonded. A plan view of a state of being fixed to the adhesive sheet 11 for dicing. A plurality of semiconductor wafers 12 formed by dicing a semiconductor wafer are bonded and fixed to the dicing adhesive sheet 11. Further, on the outer side of the region where each semiconductor wafer 12 is formed, a region in which the dicing ring 13 is self-adhered and fixed to a plurality of semiconductor wafers 12 by a predetermined region is bonded and fixed to the dicing adhesive sheet 11. The expansion is irradiated to the dicing adhesive sheet 11 as needed, and then it is performed using a conventional expansion device. Expansion device has a ring shape The outer ring 14 is capable of pressing the cutting adhesive sheet 11 downward by the cutting ring 13; the inner ring 15 has a diameter smaller than the diameter of the outer ring 14, and supports the cutting adhesive sheet 11.
擴張按下面的方式進行。首先，外環14以可***切割用黏著片11的程度隔開充分距離地位於內環15的上方。然後，使半導體晶片12及黏接固定有切割環13的切割用黏著片11***到外環14與內環15之間。此時，黏接固定有半導體晶片12的區域設置成位於內環15的中央部。然後，外環14沿內環15向下方移動，同時壓下切割環13。由於切割環13被壓下，切割用黏著片11通過切割環與內環的高度差被拉伸而進行擴張。擴張的目的在於防止在拾取時半導體晶片12彼此接觸而受到損壞。 The expansion proceeds as follows. First, the outer ring 14 is positioned above the inner ring 15 at a sufficient distance to the extent that the cutting adhesive sheet 11 can be inserted. Then, the semiconductor wafer 12 and the dicing adhesive sheet 11 to which the dicing ring 13 is bonded and fixed are inserted between the outer ring 14 and the inner ring 15. At this time, a region where the semiconductor wafer 12 is bonded and fixed is disposed at a central portion of the inner ring 15. Then, the outer ring 14 moves downward along the inner ring 15 while pressing the cutting ring 13. Since the cutting ring 13 is pressed, the cutting adhesive sheet 11 is stretched by the difference in height between the cutting ring and the inner ring to be expanded. The purpose of the expansion is to prevent the semiconductor wafers 12 from being damaged by contact with each other at the time of pickup.
由切割而形成的各半導體晶片12的縫隙(以下，稱為切割縫隙)16根據切割刀具(刀)的厚度不同而不同，通常是15~60μm(參照圖4(a))。黏接固定有這樣的半導體晶片12的切割用黏著片11擴張時，切割縫隙16的寬度被擴張到100~500μm左右(參照圖4(b))。擴張時的、外環14的相對於內環15的拉下量由切割環內徑、半導體晶圓的尺寸、半導體晶片12的尺寸及切割縫隙的數值等來進行適當的調整。例如，使用以往的擴張裝置，加工作為半導體晶圓的半導體晶圓時，拉下量通常在2~15mm之間，更好是設定為5~10mm左右。拉下量可以根據半導體晶片尺寸或切割縫隙數值、生產率等進行適度的設置。 The slit (hereinafter referred to as a slit) 16 of each semiconductor wafer 12 formed by dicing differs depending on the thickness of the dicing blade (knife), and is usually 15 to 60 μm (see FIG. 4( a )). When the dicing adhesive sheet 11 to which the semiconductor wafer 12 is bonded and fixed is expanded, the width of the dicing slit 16 is expanded to about 100 to 500 μm (see FIG. 4(b)). The amount of pulling of the outer ring 14 with respect to the inner ring 15 during expansion is appropriately adjusted by the inner diameter of the cutting ring, the size of the semiconductor wafer, the size of the semiconductor wafer 12, and the value of the slit. For example, when a semiconductor wafer as a semiconductor wafer is processed using a conventional expansion device, the amount of pulling is usually 2 to 15 mm, more preferably about 5 to 10 mm. The amount of pull-down can be appropriately set depending on the semiconductor wafer size, the value of the slit, the productivity, and the like.
在進行擴張時，在切割用黏著片11中擴張的區域被限 定於切割縫隙16、切割環13與半導體晶片12間的區域等的未黏貼半導體晶片12的區域。黏接固定有各半導體晶片12的區域不擴張。 When expanding, the area expanded in the adhesive sheet 11 for cutting is limited A region where the semiconductor wafer 12 is not bonded to the slit 16 and the region between the dicing ring 13 and the semiconductor wafer 12 is fixed. The area where the semiconductor wafers 12 are bonded and fixed is not expanded.
在切割半導體晶圓時，切割被進行到例如對於切割用黏著片11的基體材料薄膜1，切割到其厚度的1/4~1/2左右的深度。在擴張時，首先，最初切割縫隙16的部分開始展開擴張成V字形，但是，難以僅在切割縫隙16的部分擴張中，使各半導體晶片12的間隙有充分的間隔。在此，直到上述的間隔充分擴張前，還能繼續擴張切割用黏著片11。 因此，在不具有僅能夠適應切割縫隙16擴張引起的充分擴張的斷裂伸長率時，切割用黏著片11在該切割縫隙16的部分斷裂。 When the semiconductor wafer is diced, the dicing is performed to, for example, the base material film 1 for the dicing adhesive sheet 11, and is cut to a depth of about 1/4 to 1/2 of its thickness. At the time of expansion, first, the portion where the slit 16 is initially cut starts to expand and expand into a V shape, but it is difficult to sufficiently space the gaps of the semiconductor wafers 12 only in the partial expansion of the slit 16 . Here, the cutting adhesive sheet 11 can be continuously expanded until the above-described interval is sufficiently expanded. Therefore, the dicing adhesive sheet 11 is broken at a portion of the dicing slit 16 without having an elongation at break which can only accommodate sufficient expansion due to expansion of the slit 16 .
另外，即使使基體材料薄膜1的斷裂伸長率增大並使其充分適應上述的擴張，在進行擴張時，對晶片尺寸、切割縫隙數值等的不同數值的多種半導體晶圓進行處理的情況，根據情況，有時在切割縫隙16成為規定的寬度後也會進行擴張。即使在進行該擴張時，僅要適應切割縫隙16的部分時，還需要數倍~數十倍的斷裂伸長率。因而，如果是由通常的塑膠薄膜構成的基體材料薄膜，則難以與其相適應。 Further, even if the elongation at break of the base material film 1 is increased and the expansion is sufficiently adapted to the above-described expansion, when a plurality of semiconductor wafers having different values such as the wafer size and the dicing value of the slit are processed during the expansion, In some cases, the slit 16 may be expanded after it has a predetermined width. Even when the expansion is performed, it is necessary to accommodate the portion of the slit 16 to be cut, and the elongation at break is required several times to several tens of times. Therefore, if it is a film of a base material composed of a usual plastic film, it is difficult to adapt it.
因此，本發明者著眼於圖2例示的S-S曲線，在切割縫隙16達到斷裂之前，通過採取使切割用黏著片11的半導體晶圓的外周部處的區域進行擴張那樣的強度平衡，發現了能夠完全防止切割用黏著片11斷裂的方法。即，在本發 明中，首先，使基體材料薄膜1的斷裂伸長率大於等於200%，最好大於等於400%。並且，使基體材料薄膜1的耐切入度大於等於2.5、最好大於等於3。由此，在切割縫隙16達到斷裂前可以實現切割用黏著片11的半導體晶圓外周部上的區域進行擴張那樣的強度平衡。通過控製例如製膜時產生的分子取向，可能使斷裂深度的值在上述範圍內增大或減少。另外，斷裂伸長率最好分別在MD方向及TD方向進入上述數值範圍內。 Therefore, the inventors of the present invention have focused on the SS curve illustrated in FIG. 2 and found that the strength balance of the region at the outer peripheral portion of the semiconductor wafer of the dicing adhesive sheet 11 is expanded before the cleavage slit 16 is broken. A method of completely preventing the rupture of the adhesive sheet 11 for dicing. That is, in this hair In the first, first, the elongation at break of the film 1 of the base material is made 200% or more, preferably 400% or more. Further, the base material film 1 has a cut resistance of 2.5 or more, preferably 3 or more. Thereby, the strength balance in the region on the outer peripheral portion of the semiconductor wafer of the dicing adhesive sheet 11 can be expanded before the dicing slit 16 reaches the rupture. By controlling, for example, the molecular orientation generated at the time of film formation, it is possible to increase or decrease the value of the fracture depth within the above range. Further, it is preferable that the elongation at break enters the above numerical range in the MD direction and the TD direction, respectively.
基體材料1的耐切入度是表示相對於切口深度的、基體材料薄膜1的抗擴張性的指標，可以通過下面公式求得。例如，耐切入度是指耐切深度倒數程度的切割殘餘。假設，耐切入度是3，那麼表示即使將基體材料薄膜1切割到剩餘其1/3的厚度、即對基體材料薄膜1切入其厚度的2/3，仍能經得住充分地擴張。 The cut resistance of the base material 1 is an index indicating the expansion resistance of the base material film 1 with respect to the depth of the slit, and can be obtained by the following formula. For example, the penetration resistance refers to the cutting residue of the degree of reciprocation of the cut depth. Assuming that the cut-resistance is 3, it means that even if the base material film 1 is cut to a thickness of 1/3 of the remaining, that is, 2/3 of the thickness of the film 1 of the base material is cut, it can withstand sufficient expansion.
(公式3) 耐切入度=(基體材料薄膜1的斷裂強度)/(基體材料薄膜1的拉伸伸長率為30%時的拉伸伸長率)。 (Formula 3) Penetration resistance = (breaking strength of the base material film 1) / (tensile elongation when the tensile elongation of the base material film 1 is 30%).
在本發明中，使基體材料薄膜1的耐切入度大於等於2.5是根據下面的理由。即，基體材料薄膜1達到斷裂時的拉伸強度如果大於為了以30%的拉伸伸長率來擴張在切割用黏著片11中的半導體晶圓外周部的區域所需要的拉伸強度，就可以防止基體材料薄膜1的斷裂。在這點上，對於例如即使在切割進行到基體材料薄膜1的1/4~1/2左右厚度的深度的切割縫隙16的部分處也是一樣。換句話說，未被 切割的狀態下的斷裂強度的3/4~1/2的值有必要超過以拉伸伸長率的30%擴張了時的拉伸強度。因此，也考慮切割深度的誤差等，只要斷裂強度大於等於以30%的拉伸伸長率擴張了時的拉伸強度的2.5倍、最好是大於等於3倍即可。即，在本發明中，使基體材料薄膜1的耐切入度大於等於2.5，最好是大於等於3。並且，耐切入度最好分別在MD方向及TD方向中，處於上述數值範圍內。 In the present invention, the penetration resistance of the base material film 1 is 2.5 or more for the following reasons. That is, when the tensile strength at the time of breaking of the base material film 1 is larger than the tensile strength required to expand the region of the outer peripheral portion of the semiconductor wafer in the dicing adhesive sheet 11 at a tensile elongation of 30%, The breakage of the film 1 of the base material is prevented. In this regard, for example, the same is true at the portion of the slit 16 where the cutting progresses to a depth of about 1/4 to 1/2 of the thickness of the base material film 1. In other words, not It is necessary that the value of 3/4 to 1/2 of the breaking strength in the cut state exceeds the tensile strength when expanded by 30% of the tensile elongation. Therefore, the error of the cutting depth or the like is also considered, as long as the breaking strength is 2.5 times or more, preferably 3 times or more, of the tensile strength when expanded at a tensile elongation of 30%. That is, in the present invention, the penetration resistance of the base material film 1 is made 2.5 or more, preferably 3 or more. Further, it is preferable that the cut resistance is within the above numerical range in the MD direction and the TD direction, respectively.
另外，在本發明中，使基體材料薄膜1的拉伸彈性模量是50~250MPa，最好是80~150MPa。通過使拉伸彈性模量處在50~250MPa之間的範圍內，從而能夠將良好地進行拾取。而且，最好使用拉伸彈性模量處在上述數值範圍內，並且基體材料薄膜1的屈服點伸長率大於等於30%且在拉伸伸長率為大於等於0且小於30%期間的擴張中沒有屈服點的基體材料薄膜。由此，在擴張時隨著切割縫隙16的擴張，也能使半導體晶圓外周部緩慢擴張。而且，例如通過調整構成基體材料薄膜1的樹脂的分子結構(硬組合模、軟組合模比等)，從而可以使拉伸彈性模量的值在所述範圍內增大或減少。另外，拉伸彈性模量最好分別在MD方向及TD方向上進入上述數值範圍內。基體材料薄膜1的屈服點伸長率從在規定條件下以JIS K 7162為標準的拉伸試驗而得到的S-S曲線中的屈服點來讀取。與例如拉伸彈性模量相同，通過調整構成基體材料薄膜1的樹脂的分子結構，從而可以使屈服點伸長率的值在所述範圍內增大或減少。另外，屈服點伸長率只要在MD方向或TD方向的任意一方 向上大於等於30%即可。 Further, in the present invention, the tensile modulus of the base material film 1 is 50 to 250 MPa, preferably 80 to 150 MPa. By setting the tensile elastic modulus in the range of 50 to 250 MPa, the pickup can be performed favorably. Moreover, it is preferable to use the tensile elastic modulus within the above numerical range, and the yield point elongation of the base material film 1 is 30% or more and in the expansion during the tensile elongation of 0 or more and less than 30%. A film of the base material at the yield point. Thereby, the outer peripheral portion of the semiconductor wafer can be slowly expanded as the slit 16 is expanded during expansion. Further, for example, by adjusting the molecular structure (hard combination mold, soft combination mold ratio, etc.) of the resin constituting the film 1 of the base material, the value of the tensile elastic modulus can be increased or decreased within the above range. Further, it is preferable that the tensile elastic modulus enters the above numerical range in the MD direction and the TD direction, respectively. The yield point elongation of the base material film 1 was read from the yield point in the S-S curve obtained by a tensile test under the predetermined conditions in accordance with JIS K 7162. The value of the elongation at yield point can be increased or decreased within the range by adjusting the molecular structure of the resin constituting the film 1 of the base material, for example, in the same manner as the tensile modulus of elasticity. In addition, the yield point elongation is only in either the MD direction or the TD direction. Up to 30% or more.
作為上述基體材料薄膜1，最好含有選自由聚丙烯系熱塑性彈性體、丙烯酸樹脂及聚酯系熱塑性彈性體組成的群中的至少1種的聚合物。作為上述聚合物的含有量，在僅含有1個種類時，占整個基體材料薄膜1的比例最好是大於等於30wt%。另外，在使用多種上述聚合物時這些含有量的總計占整個基體材料薄膜1的比例最好是大於等於30wt%。 The base material film 1 preferably contains at least one polymer selected from the group consisting of a polypropylene-based thermoplastic elastomer, an acrylic resin, and a polyester-based thermoplastic elastomer. When the content of the above polymer is contained in only one type, the ratio of the entire base material film 1 is preferably 30% by weight or more. Further, when a plurality of the above polymers are used, the total of these contents is preferably 30% by weight or more based on the entire film of the base material.
作為聚丙烯系熱塑性彈性體，能夠例舉出例如丙烯-SEBS共聚物、丙烯-SEPS共聚物、丙烯-EPR共聚物等。作為上述丙烯酸樹脂，能夠例舉出例如甲基丙烯酸樹脂、各種丙烯酸酯的共聚物等。作為上述聚酯系熱塑性彈性體，能夠例舉出例如由PBT(聚對苯二甲酸丁二酯)-PE(聚醚)-PBT構成的TPEE(熱塑性聚酯彈性體)等。 The polypropylene-based thermoplastic elastomer may, for example, be a propylene-SEBS copolymer, a propylene-SEPS copolymer, or a propylene-EPR copolymer. The acrylic resin may, for example, be a methacrylic resin or a copolymer of various acrylates. The polyester-based thermoplastic elastomer may, for example, be TPEE (thermoplastic polyester elastomer) composed of PBT (polybutylene terephthalate)-PE (polyether)-PBT.
基體材料薄膜1可以是單層或多層中的任意一種層疊結構。在為多層結構時最好是由奇數層組成。並且，在奇數層時，以其中央層為中心，由相同的物理性能值、構成材料等組成的層較好是對稱地層疊於兩側的對稱結構。另外，在黏著劑層2是放射線固化型時，最好使用至少使X射線、紫外線、電子射線等放射線的一部分透過的黏著劑。 The base material film 1 may be a laminated structure of any one of a single layer or a plurality of layers. It is preferably composed of odd layers when it is a multilayer structure. Further, in the case of an odd-numbered layer, a layer composed of the same physical property value, constituent material or the like centering on the central layer is preferably a symmetric structure which is symmetrically laminated on both sides. Moreover, when the adhesive layer 2 is a radiation-curable type, it is preferable to use an adhesive which transmits at least a part of radiation such as X-rays, ultraviolet rays, and electron beams.
基體材料薄膜1中可以根據需要來調配礦物油等軟化劑、碳酸鈣、二氧化矽、滑石粉、雲母、黏土等填充劑、抗氧化劑、光穩定劑、防靜電劑、潤滑劑、分散劑、中和劑、著色劑等各種添加劑。另外，也可以根據需要塗覆防 靜電劑或著色劑等。 In the base material film 1, a softener such as mineral oil, a filler such as calcium carbonate, cerium oxide, talc, mica or clay, an antioxidant, a light stabilizer, an antistatic agent, a lubricant, a dispersing agent, or the like may be blended as needed. Various additives such as neutralizers and colorants. In addition, it can also be coated as needed Electrostatic agent or colorant, etc.
基體材料薄膜1的厚度未受特別限製、可以恰當地確定，通常是10~30μm，最好是50~200μm左右。 The thickness of the base material film 1 is not particularly limited and can be appropriately determined, and is usually 10 to 30 μm, preferably about 50 to 200 μm.
另外，基體材料薄膜1可以不拉伸地使用，也可以根據需要對其進行單軸或雙軸拉伸處理。在這樣製造而成的基體材料薄膜1的表面能夠根據需要實施消光處理、電暈放電處理、塗底塗料處理、交聯處理等慣用的物理或化學處理。 Further, the base material film 1 may be used without stretching, or may be subjected to uniaxial or biaxial stretching treatment as needed. The surface of the base material film 1 thus produced can be subjected to conventional physical or chemical treatment such as matting treatment, corona discharge treatment, primer treatment, and crosslinking treatment as needed.
作為基體材料薄膜1的製膜方法，可以採用以往習知的方法。具體地可以恰當地使用例如壓延機製膜、鑄造製膜、擴張擠出、T拉模擠出等。另外，在基體材料薄膜1由多層膜組成時，作為該基體材料薄膜1的製膜方法，可以使用例如共同擠出法、幹式複合法等慣用的薄膜層疊法。 As a film forming method of the base material film 1, a conventionally known method can be employed. Specifically, for example, a calendering film, a cast film, a stretch extrusion, a T-die extrusion, or the like can be suitably used. Further, when the base material film 1 is composed of a multilayer film, as a film forming method of the base material film 1, a conventional film lamination method such as a co-extrusion method or a dry lamination method can be used.
黏著劑層2可以使用習知或慣用的黏著劑。這種黏著劑並沒有什麼限製，能後使用例如橡膠系、丙烯酸系、矽酮系、聚酯系、聚醋酸乙酯系等各種黏著劑。 As the adhesive layer 2, a conventional or conventional adhesive can be used. The adhesive is not particularly limited, and various adhesives such as a rubber-based, acrylic-based, anthrone-based, polyester-based, and polyvinyl-acetate-based adhesives can be used.
作為上述黏著劑最好是丙烯酸系黏著劑。作為丙烯酸系黏著劑的基礎聚合物的丙烯酸系聚合物一般使用烷基(甲基)丙烯酸酯的聚合物或其與共聚合性單體的共聚物。作為丙烯酸系聚合物的主要單體，優選其均聚物的玻璃轉移溫度小於等於20℃的烷基(甲基)丙烯酸酯。 The above adhesive is preferably an acrylic adhesive. As the acrylic polymer which is a base polymer of an acrylic adhesive, a polymer of an alkyl (meth) acrylate or a copolymer thereof with a copolymerizable monomer is generally used. As the main monomer of the acrylic polymer, an alkyl (meth) acrylate whose homopolymer has a glass transition temperature of 20 ° C or less is preferable.
作為烷基(甲基)丙烯酸酯的烷基，能夠例舉例如甲基、乙基、丁基、2-乙基己基、辛基、異壬基等。另外，作為上述共聚合性單體，能夠例舉(甲基)丙烯酸的羥烷基 酯(例如羥乙基酯、羥丁基酯、羥己基酯等)、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸、衣康酸、馬來酸酐、(甲基)丙烯酸醯胺、(甲基)丙烯酸N-羥甲基醯胺、氨基烷基烷基(甲基)丙烯酸酯(例如二甲基氨基乙基甲基丙烯酸酯、叔丁基氨基乙基甲基丙烯酸酯等)、醋酸乙酯、苯乙烯、丙烯腈、丙烯醯嗎啉等。 The alkyl group of the alkyl (meth) acrylate may, for example, be a methyl group, an ethyl group, a butyl group, a 2-ethylhexyl group, an octyl group or an isodecyl group. Further, as the above copolymerizable monomer, a hydroxyalkyl group of (meth)acrylic acid can be exemplified Esters (such as hydroxyethyl ester, hydroxybutyl ester, hydroxyhexyl ester, etc.), glycidyl (meth)acrylate, (meth)acrylic acid, itaconic acid, maleic anhydride, decyl (meth)acrylate, N-hydroxymethyl decyl (meth) acrylate, aminoalkyl alkyl (meth) acrylate (for example, dimethylaminoethyl methacrylate, t-butylaminoethyl methacrylate, etc.), Ethyl acetate, styrene, acrylonitrile, propylene morpholine, and the like.
另外，作為黏著劑，也可以使用由紫外線、電子射線等進行固化的放射線固化型黏著劑或加熱發泡型黏著劑。由此，在將半導體晶片12從切割用黏著片11剝離時，通過對黏著劑層2照射紫外線或進行規定加熱，能夠使黏著劑層2的黏接力下降。其結果能夠容易進行半導體晶片的剝離。還可以是切割與晶片焊接可以兼用的黏著劑。在本發明中，使用放射線固化型、最好是使用紫外線固化型。並且，在作為黏著劑而使用放射線固化型黏著劑時，為了能夠在切割工程之前或之後對黏著劑照射紫外線，上述基體材料薄膜1最好是具有充分的放射線透過性。 Further, as the adhesive, a radiation-curable adhesive or a heat-expandable adhesive which is cured by ultraviolet rays, electron beams or the like can be used. Thus, when the semiconductor wafer 12 is peeled off from the dicing adhesive sheet 11, by applying ultraviolet rays to the adhesive layer 2 or performing predetermined heating, the adhesive strength of the adhesive layer 2 can be lowered. As a result, peeling of the semiconductor wafer can be easily performed. It can also be an adhesive that can be used for both cutting and wafer soldering. In the present invention, a radiation curing type, preferably an ultraviolet curing type, is used. Further, when a radiation curable adhesive is used as the adhesive, the base material film 1 preferably has sufficient radiation permeability in order to irradiate the adhesive with ultraviolet rays before or after the cutting process.
放射線固化型黏著劑含有例如上述基礎聚合物(丙烯酸系聚合物)和放射線固化組分而成。放射線固化組分能夠不受特別限製地使用在分子中具有碳-碳雙鍵、能夠通過自由基聚合固化的單體、低聚物或聚合物。作為放射線固化組分，能夠例舉例如三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四甘醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等(甲基)丙烯酸和多元醇的酯 化物：酯丙烯酸酯低聚物；2-丙烯基-二-3-丁烯基氰尿酸酯、2-羥乙基雙(2-丙烯醯氧基乙基)異氰尿酸酯、三(2-甲基丙烯醯氧基乙基)異氰尿酸酯等異氰脲酸酯或異氰尿酸酯化合物、或聚氨酯丙烯酸酯等。 The radiation-curable adhesive contains, for example, the above-mentioned base polymer (acrylic polymer) and a radiation curable component. The radiation curable component can be a monomer, oligomer or polymer which has a carbon-carbon double bond in the molecule and can be cured by radical polymerization without particular limitation. As the radiation curing component, for example, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, tetraethylene glycol di(meth)acrylate, 1,6-hexanediol can be exemplified. Esters of (meth)acrylic acid and polyhydric alcohols such as di(meth)acrylate, neopentyl glycol di(meth)acrylate, dipentaerythritol hexa(meth)acrylate Compound: ester acrylate oligomer; 2-propenyl-di-3-butenyl cyanurate, 2-hydroxyethyl bis(2-propenyloxyethyl) isocyanurate, three ( Isocyanurate or isocyanurate compound such as 2-methacryloxyethyl)isocyanurate or urethane acrylate.
另外，放射線固化型黏著劑作為基礎聚合物(丙烯酸系聚合物)，也可以使用在聚合物支鏈上具有碳-碳雙鍵的放射線固化型聚合物，在該情況下不需要加入上述放射線固化組分。 Further, as the base polymer (acrylic polymer), a radiation curable adhesive may be a radiation curable polymer having a carbon-carbon double bond in a polymer branch, in which case it is not necessary to add the above radiation curing. Component.
在用紫外線固化放射線固化型黏著劑時需要光重合引發劑。作為光重合引發劑，能夠例舉，例如安息香甲基醚、安息香丙基醚、安息香異丁基醚等安息香烷基醚類：苯偶醯基、安息香、苯酮、α-羥基環己基苯酮等芳香族酮類；苄基二甲基縮酮等芳香族縮酮類；聚乙烯苯甲酮；氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮等噻噸酮類。 A photorecopolymer initiator is required when curing a radiation curable adhesive with ultraviolet rays. The photo-coinciding initiator may, for example, be a benzoin alkyl ether such as benzoin methyl ether, benzoin propyl ether or benzoin isobutyl ether: benzoin, benzoin, benzophenone or α-hydroxycyclohexyl benzophenone. Aromatic ketones such as aromatic ketones; benzyl dimethyl ketal; polyvinyl benzophenone; chlorothioxanthone, dodecyl thioxanthone, dimethyl thioxanthone, diethyl thiophene Thioxanone such as ketone.
在上述黏著劑中還可以根據需要含有交聯劑、增黏劑、填充劑、抗老化劑、著色劑等慣用的添加劑。作為交聯劑能夠例舉，例如聚異氰酸酯化合物、三聚氰胺樹脂、尿素樹脂、氮丙啶化合物、環氧樹脂、酐、聚胺含羧基聚合物等。 The above-mentioned adhesive may further contain a conventional additive such as a crosslinking agent, a tackifier, a filler, an anti-aging agent, or a coloring agent as needed. The crosslinking agent may, for example, be a polyisocyanate compound, a melamine resin, a urea resin, an aziridine compound, an epoxy resin, an anhydride, a polyamine carboxyl group-containing polymer or the like.
上述黏著劑層2的厚度可以考慮黏著劑的種類及切割時的切割深度等來適當地設定。具體地，最好是黏著劑層2的厚度大於等於1μm，且小於等於上述基體材料厚度的1/3。通過使黏著劑層2的厚度大於等於1μm，從而能夠維 持作為切割用黏著片11的黏接力。並且，通過使黏著劑層2的厚度小於等於基體材料薄膜1的厚度的1/3，從而能夠抑製黏著劑層2的拉伸彈性模量及斷裂強度等過度降低，並充分發揮具有基體材料薄膜1的特性。 The thickness of the above-mentioned adhesive layer 2 can be appropriately set in consideration of the type of the adhesive, the depth of cut at the time of cutting, and the like. Specifically, it is preferable that the thickness of the adhesive layer 2 is 1 μm or more and 1/3 or less of the thickness of the above-mentioned base material. By making the thickness of the adhesive layer 2 1 μm or more, it is possible to maintain The adhesive force as the adhesive sheet 11 for cutting is held. In addition, by making the thickness of the adhesive layer 2 equal to or less than 1/3 of the thickness of the base material film 1, it is possible to suppress an excessive decrease in the tensile elastic modulus and the breaking strength of the adhesive layer 2, and to sufficiently exhibit a film having a base material. The characteristics of 1.
本發明的切割用黏著片11為了貼簽加工或使黏著劑層2平滑，也可以將隔板3層疊到黏著劑層2上。作為隔板3的構成材料能夠例舉紙、聚乙烯、聚丙烯、聚對苯二甲酸乙二酯等合成樹脂膜。為了提高從黏著劑層2的剝離性，可以根據需要在隔板3的表面實施矽處理、長鏈丙烯酸處理、氟處理等剝離處理。另外，對應於提高剛性等目的，也可以進行單軸或雙軸拉伸處理或用另一塑膠薄膜等進行層疊。隔板3的厚度不受特別限定，但較好是例如10~200μm，更好是25~100μm。 The dicing adhesive sheet 11 of the present invention may be laminated on the adhesive layer 2 for labeling or smoothing of the adhesive layer 2. The constituent material of the separator 3 can be, for example, a synthetic resin film such as paper, polyethylene, polypropylene, or polyethylene terephthalate. In order to improve the peelability from the adhesive layer 2, a peeling treatment such as a hydrazine treatment, a long-chain acrylic treatment, or a fluorine treatment may be performed on the surface of the separator 3 as needed. Further, for the purpose of improving rigidity or the like, uniaxial or biaxial stretching treatment or lamination with another plastic film or the like may be performed. The thickness of the separator 3 is not particularly limited, but is preferably, for example, 10 to 200 μm, more preferably 25 to 100 μm.
圖1中，在基體材料薄膜1的一面具有黏著劑層2，黏著劑層2也可以形成於基體材料薄膜1的兩面。並且，切割用黏著片11也可以纏繞片而成卷狀。 In Fig. 1, an adhesive layer 2 is provided on one surface of the base material film 1, and the adhesive layer 2 may be formed on both surfaces of the base material film 1. Further, the dicing adhesive sheet 11 may be wound into a roll shape.
本發明的切割用黏著片11例如可以在基體材料薄膜的表面塗覆黏著劑並使其乾燥(根據需要使其加熱交聯)而形成黏著劑層2，通過根據需要而將隔板貼合到該黏著劑層2的表面來製造。另外，可以採用在另一隔板上形成了黏著劑層2之後將它們貼合到基體材料薄膜1上的方法等。 The viscous adhesive sheet 11 of the present invention can be formed, for example, by applying an adhesive to the surface of the base material film and drying it (heat-crosslinking as needed) to form the adhesive layer 2, and bonding the separator to the surface as needed. The surface of the adhesive layer 2 is manufactured. Further, a method of adhering them to the film 1 of the base material after the adhesive layer 2 is formed on the other separator may be employed.
並且，將切割用黏著片11黏貼到半導體晶圓的工程將通過雙面黏著片而固定於支承晶圓(支承板)的半導體晶圓貼合到切割用黏著片11上，並將其固定於切割環13。該工 程將半導體晶圓和切割用黏著片11重疊以使得黏著劑層2側成為貼合面，並通過擠壓輥等擠壓部件進行擠壓。另外，也可以在可加壓的容器(例如高壓鍋等)中，如上述那樣地重疊半導體晶圓和切割用黏著片11，並通過使容器內加壓從而進行黏貼。此時，也可以一邊通過擠壓部件擠壓，一邊進行黏貼。另外，也可以在真空容器內與上述同樣地進行黏貼。黏貼時的黏貼溫度不受什麼限定，但最好是在20~80℃之間。 Further, the bonding of the dicing adhesive sheet 11 to the semiconductor wafer is performed by bonding the semiconductor wafer fixed to the supporting wafer (supporting sheet) by the double-sided adhesive sheet to the dicing adhesive sheet 11, and fixing it to Cutting ring 13. The work The semiconductor wafer and the dicing adhesive sheet 11 are overlapped so that the side of the adhesive layer 2 becomes a bonding surface, and is pressed by a pressing member such as a squeezing roller. Further, in the pressurizable container (for example, a pressure cooker or the like), the semiconductor wafer and the dicing adhesive sheet 11 may be stacked as described above, and the inside of the container may be pressed to be adhered. At this time, it is also possible to perform the adhesion while being pressed by the pressing member. Alternatively, the pressure may be applied in the same manner as described above in the vacuum container. The sticking temperature at the time of pasting is not limited, but it is preferably between 20 and 80 °C.
切斷(切割)半導體晶圓並形成半導體晶片12的工程可以按常規方法從半導體晶圓的回路面側進行。另外，切割可以使用刀具切割、鐳射切割、等離子切割、或軋裂等習知的方法。並且，在該工程中，作為切割裝置能夠不受特別限定地使用以往習知的方法。 The process of cutting (cutting) the semiconductor wafer and forming the semiconductor wafer 12 can be performed from the loop face side of the semiconductor wafer in a conventional manner. Further, the cutting may use a conventional method such as knife cutting, laser cutting, plasma cutting, or rolling. Further, in this project, a conventionally known method can be used as the cutting device without particular limitation.
在將帶有黏著劑層2的各半導體晶片12從基體材料薄膜1上剝離的工程中，進行例如通過用針將每個半導體晶片12從切割用黏著片11側往上頂，並由拾取裝置拾取被頂上來的半導體晶片12的方法等。 In the process of peeling each of the semiconductor wafers 12 with the adhesive layer 2 from the base material film 1, for example, each semiconductor wafer 12 is lifted from the side of the dicing adhesive sheet 11 by a needle, and is picked up by the pick-up device. A method of picking up the semiconductor wafer 12 that is topped up, and the like.
在上面的說明中，作為被切斷體，以使用半導體晶圓的情況為例進行了說明。但本發明不限定於此，對例如半導體封裝件、玻璃、陶瓷等被切斷體也可以適用。 In the above description, the case where the semiconductor wafer is used as the object to be cut has been described as an example. However, the present invention is not limited thereto, and can be applied to, for example, a semiconductor package, a glass, a ceramic, or the like.
下面，舉例詳細說明本發明的較佳實施例。但本實施例中的材料或混合量等只要沒有特別限定的記載，並不是將本發明的範圍僅限於此的意思，不過是簡單的說明例子。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail. However, the materials, the mixing amounts, and the like in the examples are not intended to limit the scope of the invention, and are merely illustrative examples, unless otherwise specified.
通過下面的方法評價了用上述方法製造的基體材料薄膜。將結果在表1中表示。 The base material film produced by the above method was evaluated by the following method. The results are shown in Table 1.
(1)拉伸彈性模量。 (1) Tensile modulus of elasticity.
試驗方法是以JIS K 7162為基準進行的。作為測定條件，將作為樣品的基體材料薄膜設為初始長度120mm，寬度10mm的長方形狀，以與卡盤間距離50mm、拉伸速度300mm/min的在MD方向或TD方向進行拉伸試驗，並測定了各方向上的樣品的伸長的變化量(mm)。其結果，在得到的S-S曲線(參照圖2)的初始的立起的部分引出切線，並用基體材料薄膜的截面積分割其切線相當於100%伸長時的拉伸強度來作為拉伸彈性模量。將結果在下面的表1中表示。 The test method was carried out based on JIS K 7162. As a measurement condition, the base material film as a sample was a rectangular shape having an initial length of 120 mm and a width of 10 mm, and was subjected to a tensile test in the MD direction or the TD direction at a distance of 50 mm from the chuck and a tensile speed of 300 mm/min. The amount of change in elongation (mm) of the samples in each direction was measured. As a result, a tangent is drawn in the initial rising portion of the obtained SS curve (see FIG. 2), and the tensile strength at 100% elongation is divided by the cross-sectional area of the base material film as the tensile elastic modulus. . The results are shown in Table 1 below.
(2)屈服點伸長率、斷裂伸長率、耐切入度。 (2) Yield point elongation, elongation at break, and penetration resistance.
以與上述(1)所示的方法相同地進行拉伸試驗，得到S-S曲線。並且，分別求得了拉伸伸長率在30%時的MD方向或TD方向上的拉伸強度、斷裂強度、及斷裂伸長率。耐切入度由下面公式求得。並且，S-S曲線如圖5所示，在顯現不隨擴張增加拉伸強度而一旦引起拉伸強度的下降並再次上升的屈服點時，將其屈服點處的拉伸伸長率作為屈服點伸長率來求得耐切入度。 The tensile test was carried out in the same manner as the method shown in the above (1) to obtain an S-S curve. Further, tensile strength, breaking strength, and elongation at break in the MD direction or the TD direction at a tensile elongation of 30% were obtained. The cut resistance is obtained by the following formula. Further, as shown in FIG. 5, the SS curve exhibits a tensile elongation at a yield point as a yield point elongation when a yield point which does not increase the tensile strength with expansion and causes a decrease in tensile strength and rises again is exhibited. To find the endurance.
(公式4) 耐切入度=(基體材料薄膜的斷裂強度)/(基體材料薄膜的拉伸伸長率為30%時的拉伸強度)。 (Formula 4) Cut resistance = (breaking strength of the film of the base material) / (tensile strength when the tensile elongation of the film of the base material is 30%).
(基體材料薄膜的製造) (Manufacture of base material film)
將三菱化學(公司)製造的“商品名：”供给到 公司製造的T拉膜成形機(設定温度為230℃)進行製膜，製造出了厚100μm、寛35cm的基體材料薄膜。三菱化學(公司)製造的“商品名：”是含有丙稀組分及乙烯丙烯橡膠組分的丙稀系熱塑性彈性體。 "Made in the name of Mitsubishi Chemical (company): Supply to A T-film forming machine manufactured by the company (setting temperature: 230 ° C) was used to form a film, and a film of a base material having a thickness of 100 μm and a thickness of 35 cm was produced. "Made in the name of Mitsubishi Chemical (company): "" is a propylene-based thermoplastic elastomer containing an acryl component and an ethylene propylene rubber component.
對於得到的基體材料薄膜評價了彈性拉伸模量、屈服點伸長率、斷裂伸長率、耐切入度的各個物理性能。 The physical properties of the elastic tensile modulus, the yield point elongation, the elongation at break, and the penetration resistance were evaluated for the obtained base material film.
由常規方法使90重量份丙烯酸丁酯及10重量份丙烯酸在甲苯溶液中共聚合，得到了重量平均分子量50萬的丙稀系進行共聚合。在含有該丙稀系共聚物的溶液中添加二季戊四醇六丙烯酸酯(商品名“ DPHA”日本化藥(公司)製造)80重量份、光重合引發劑(商品名“ 184”、公司製造)5重量份、聚異氰酸酯化合物(商品名“ L”、日本 (公司)製造)5重量份，調製出了丙稀系紫外線固化型黏着劑溶液。 90 parts by weight of butyl acrylate and 10 parts by weight of acrylic acid were copolymerized in a toluene solution by a usual method to obtain a propylene-based copolymer having a weight average molecular weight of 500,000. Adding dipentaerythritol hexaacrylate to a solution containing the propylene-based copolymer (trade name " DPHA "manufactured by Nippon Kayaku Co., Ltd." 80 parts by weight, photorecopolymer initiator (trade name " 184", Manufactured by the company) 5 parts by weight of polyisocyanate compound (trade name " L", Japan (produced by the company) 5 parts by weight, a propylene-based ultraviolet-curable adhesive solution was prepared.
將用上述方法調製而成的黏著劑溶液塗覆在用上述方法得到的基體材料薄膜的電暈處理面上，並在80℃加熱交聯10分鐘，從而形成10μm厚的紫外線固化型黏著劑層。然後，將隔板貼合於該黏著劑層面而製造出紫外線固化型切割用黏著片。 The adhesive solution prepared by the above method was coated on the corona-treated surface of the film of the base material obtained by the above method, and heat-crosslinked at 80 ° C for 10 minutes to form a 10 μm thick ultraviolet curable adhesive layer. . Then, the separator is bonded to the adhesive layer to produce an ultraviolet-curable dicing adhesive sheet.
(基體材料薄膜的製造) (Manufacture of base material film)
將(公司)製造的“商品名： SA-F”(甲基丙烯酸酯樹脂)壓延成形而膜化(設定溫度170℃)，製造出厚100μm、寬35cm的基體材料薄膜。 Will (company) Manufacturing "commodity name: SA-F" (methacrylic resin) was formed by calendering and film formation (setting temperature: 170 ° C), and a film of a base material having a thickness of 100 μm and a width of 35 cm was produced.
與實施例1同樣地對得到的基體材料薄膜的物理性能進行評價。將結果表示在下面的表1中。 The physical properties of the obtained base material film were evaluated in the same manner as in Example 1. The results are shown in Table 1 below.
將用實施例1調製出的黏著劑溶液塗覆到用上述方法得到的基體材料薄膜的電暈處理面上，並在80℃加熱交聯10分鐘，從而形成10μm厚的紫外線固化型黏著劑層。然後，將隔板貼合於該黏著劑層面而製造出紫外線固化型切割用黏著片。 The adhesive solution prepared in Example 1 was applied to the corona-treated surface of the film of the base material obtained by the above method, and heat-crosslinked at 80 ° C for 10 minutes to form a 10 μm thick ultraviolet curable adhesive layer. . Then, the separator is bonded to the adhesive layer to produce an ultraviolet-curable dicing adhesive sheet.
(基體材料薄膜的製造) (Manufacture of base material film)
將帝人化成(公司)製造的“商品名：”(聚酯彈性體樹脂)供给到公司製造的T拉膜成形機(設定温度為230℃)進行製膜，製造出厚100μm、寛35cm的基體材料薄膜。 "The name of the product made by Teijin (company): "(Polyester elastomer resin) is supplied to A T-film forming machine manufactured by the company (setting temperature: 230 ° C) was used to form a film of a base material having a thickness of 100 μm and a thickness of 35 cm.
與實施方式1同樣地對得到的基體材料薄膜的物理性能進行評價。將結果表示在下面的表1中。 The physical properties of the obtained base material film were evaluated in the same manner as in the first embodiment. The results are shown in Table 1 below.
將用實施例1調製出的黏著劑溶液塗覆到用上述方法 得到的基體材料薄膜的電暈處理面上，並在80℃交聯固化10分鐘，從而形成10μm厚的紫外線固化型黏著劑層。然後，將隔板貼合於該黏著劑層面而製造出紫外線固化型切割用黏著片。 Applying the adhesive solution prepared in Example 1 to the above method The obtained base material film was cross-linked and cured at 80 ° C for 10 minutes on the corona-treated surface to form a 10 μm-thick UV-curable adhesive layer. Then, the separator is bonded to the adhesive layer to produce an ultraviolet-curable dicing adhesive sheet.
在本比較例中，作為基體材料薄膜，使用低密度聚乙烯(商品名：、MFR=1.5、三井住友 (公司)製造)，通過T拉模壓出法製造薄膜(厚100μm)、除使用對該薄膜單面實施電暈處理的基體材料薄膜外，與實施方式1同樣地製造出紫外線固化型切割用黏着片。 In this comparative example, as a film of a base material, low density polyethylene was used (trade name: , MFR=1.5, Sumitomo Mitsui (manufactured by the company), a film (thickness: 100 μm) was produced by a T-die extrusion method, and an ultraviolet curing type dicing adhesive was produced in the same manner as in the first embodiment except that a film of a base material on which one side of the film was subjected to corona treatment was used. sheet.
在本比較例中，作為基體材料薄膜，使用乙烯-甲基丙烯酸共聚物(商品名：、MFR=2.0、三井 (公司)製造)，通過T拉模壓出法製造薄膜(厚100μm)、除使用對該薄膜單面實施電暈處理的基體材料薄膜外，與實施方式1同樣地製造出紫外線固化型切割用黏着片。 In this comparative example, as a film of a base material, an ethylene-methacrylic acid copolymer (trade name: , MFR=2.0, Mitsui (manufactured by the company), a film (thickness: 100 μm) was produced by a T-die extrusion method, and an ultraviolet curing type dicing adhesive was produced in the same manner as in the first embodiment except that a film of a base material on which one side of the film was subjected to corona treatment was used. sheet.
通過下面的方法評價了用實施例及比較例得到的各切割用黏著片。將這些結果表示在下面的表1中。 Each of the dicing adhesive sheets obtained in the examples and the comparative examples was evaluated by the following method. These results are shown in Table 1 below.
將350μm厚的8英寸晶圓固定到切割用黏著片上，在下面的條件下進行切割。 A 350 μm thick 8-inch wafer was attached to the dicing adhesive sheet and cut under the following conditions.
分劃片機：DISCO公司製造、DFD-651(商品名) Dividing machine: manufactured by DISCO, DFD-651 (trade name)
刀具：DISCO公司製造、NBC-ZH2050 27HEDD(商品名) Tool: manufactured by DISCO, NBC-ZH2050 27HEDD (trade name)
刀具轉速：45,000rpm Tool speed: 45,000 rpm
切割速度：100mm/sec Cutting speed: 100mm/sec
切割深度：相對於基體材料薄膜為40μm Cutting depth: 40μm relative to the base material film
切割尺寸：8mm×8mm Cutting size: 8mm × 8mm
用模具連接器(裝置名：“CPS-100”、“NEC (公司)製造”)將切割後的構件，通過使相對於內環的外環的拉下量變化為5mm、10mm、15mm而分別進行擴張，確認各切割用黏着片有無斷裂。 Mold connector (device name: "CPS-100", "NEC (Manufacture by the company) The member after cutting was expanded by changing the amount of the outer ring of the inner ring to 5 mm, 10 mm, and 15 mm, and it was confirmed whether or not each of the dicing adhesive sheets was broken.
如從表1所得知的那樣，得知了在實施例中的切割用黏著片的情況，不產生斷裂且擴張性優良。另一方面，已經確認了：在比較例中的切割用黏著片的情況，雖然拉下量為5mm時未產生斷裂，但在10mm或15mm的拉下量時產生斷裂。 As is known from Table 1, in the case of the adhesive sheet for dicing in the examples, no fracture occurred and the expandability was excellent. On the other hand, it has been confirmed that in the case of the adhesive sheet for dicing in the comparative example, although no breakage occurred when the amount of pulling was 5 mm, breakage occurred at a pulling amount of 10 mm or 15 mm.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
1‧‧‧基材薄膜(基材) 1‧‧‧Substrate film (substrate)
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
3‧‧‧隔離膜 3‧‧‧Separator
11‧‧‧切割用黏著片 11‧‧‧Cut adhesive sheets
12‧‧‧半導體晶片 12‧‧‧Semiconductor wafer
13‧‧‧切割環 13‧‧‧ cutting ring
14‧‧‧外環 14‧‧‧Outer Ring
15‧‧‧內環 15‧‧‧ Inner Ring
16‧‧‧切割路徑 16‧‧‧ cutting path
圖1是表示本發明實施方式中的切割用黏著片概況的截面圖。 Fig. 1 is a cross-sectional view showing an outline of an adhesive sheet for dicing according to an embodiment of the present invention.
圖2是表示上述切割用黏著片中的基體材料薄膜的拉伸伸長率與拉伸強度的關係的曲線圖。 Fig. 2 is a graph showing the relationship between the tensile elongation of the base material film and the tensile strength in the above-mentioned dicing adhesive sheet.
圖3(a)是表示黏貼於半導體晶圓的上述切割用黏著片的擴張的樣子的說明圖；(b)是表示半導體晶片及切割環被黏接固定於切割用黏著片的樣子的上視圖。 3(a) is an explanatory view showing a state in which the dicing adhesive sheet adhered to the semiconductor wafer is expanded, and (b) is a top view showing a state in which the semiconductor wafer and the dicing ring are bonded and fixed to the dicing adhesive sheet. .
圖4(a)是表示切割後半導體晶片及切割用黏著片的截面圖；(b)是表示擴張了的半導體晶片及切割用黏著片的截面圖。 4(a) is a cross-sectional view showing the semiconductor wafer and the dicing adhesive sheet after dicing, and FIG. 4(b) is a cross-sectional view showing the expanded semiconductor wafer and the dicing adhesive sheet.
圖5是表示實施方式中的切割用黏著片的基體材料薄膜中的拉伸伸長率與拉伸強度的關係的曲線圖。 Fig. 5 is a graph showing the relationship between the tensile elongation and the tensile strength in the base material film of the dicing adhesive sheet in the embodiment.
1‧‧‧基材薄膜(基材) 1‧‧‧Substrate film (substrate)
2‧‧‧黏著劑層 2‧‧‧Adhesive layer
3‧‧‧隔離膜 3‧‧‧Separator
11‧‧‧切割用黏著片 11‧‧‧Cut adhesive sheets
Claims (12)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2005181744A JP4549239B2 (en) | 2005-06-22 | 2005-06-22 | Dicing adhesive sheet |
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| TW200700527A TW200700527A (en) | 2007-01-01 |
| TWI382074B true TWI382074B (en) | 2013-01-11 |
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| TW095112613A TWI382074B (en) | 2005-06-22 | 2006-04-10 | Adhesive sheet for dicing |
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| JP (1) | JP4549239B2 (en) |
| KR (1) | KR101169479B1 (en) |
| CN (1) | CN1884412B (en) |
| TW (1) | TWI382074B (en) |
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| KR100922226B1 (en) * | 2007-12-10 | 2009-10-20 | 주식회사 엘지화학 | Adhesive film, dicing die bonding film and semiconductor device using the same |
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| KR101883648B1 (en) * | 2011-05-17 | 2018-07-31 | 린텍 코포레이션 | Film and adhesive sheet |
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| CN1884412B (en) | 2012-01-25 |
| CN1884412A (en) | 2006-12-27 |
| TW200700527A (en) | 2007-01-01 |
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| JP4549239B2 (en) | 2010-09-22 |
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| KR101169479B1 (en) | 2012-07-27 |
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