TWI376800B - A heating center pcram structure and methods for making the same - Google Patents
A heating center pcram structure and methods for making the same Download PDFInfo
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- TWI376800B TWI376800B TW097107523A TW97107523A TWI376800B TW I376800 B TWI376800 B TW I376800B TW 097107523 A TW097107523 A TW 097107523A TW 97107523 A TW97107523 A TW 97107523A TW I376800 B TWI376800 B TW I376800B
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- heating
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- 238000000034 method Methods 0.000 title claims description 47
- 239000012071 phase Substances 0.000 claims description 109
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- 239000000463 material Substances 0.000 claims description 86
- 239000012782 phase change material Substances 0.000 claims description 38
- 238000010438 heat treatment Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- -1 titanium ruthenium nitride Chemical class 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
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- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims 3
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- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 239000011133 lead Substances 0.000 claims 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 1
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 241000270666 Testudines Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- 241000283070 Equus zebra Species 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
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- 229960003321 baicalin Drugs 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
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- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
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- 239000002243 precursor Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Description
1376800 I九、發明說明: 【發明所屬之技術領域】 本發明係有關於使用相變化記憶材料,像是硫屬化物與 其他材料之高密度記憶裝置,以及製造此等裝置的製造方法。 【先前技術】 相變化記憶材料係廣泛地用於讀寫光碟中。這些材料包 括^至4兩種固油’包括如為非晶態之固態相,以及為結 曰曰態之固態相。雷射脈衝係用於讀寫光碟片中,以在二種相 切換’並讀取此觀料於相變化之後的光學性質。 Η 物及類似材料之此等相變化記憶材料,可藉由 二;中之電流,而致使晶相變化。一 15 20 。這種特性則引發使用可程式化Ϊ 機存取讀寫揮發性記憶體電路等興趣,此料可:用於隨 態轉低電流步驟。從結晶 驟,其包括-短暫的〜^重置(刪))一般係為—高電流步 構,i彳乡臀的向電流密度脈衝以融化或破壞社曰砝 使相變化材料從jrtri维持在非晶態。理想狀態下’致 越好。 至非晶態之重置電流幅度應:越低 5 25 1376800 能轉;晶態—般係為-低電流步驟。從結晶 Μ,it·彳乡日嫩/mi電瓜w度脈衝以融化或破壞結晶結 = ^快速冷卻,抑制相變化的過程,使 付至乂 4 4時化結構得以維持在非晶態 使相變化材料從結晶態轉變 :狀: 爾 15 20 料之接觸面積=2 以及減少電極與此相變化材 押之接觸面積而達成,因此可 小的絕對電流值而達成較高的電流密度。文化材枓凡件把加較 置過程中’藉由增加該相變化材料的電阻率,可以 時,其自我加执係盘該相^’因為在相變化發生 成正比,“阻率(忽略熱庫效應) 取資料時,亦需要一個小的;取由該記:憶胞讀 未進入-非所需的相變化。;相變化材料並 耗有著任=益;:總;;且π對:;,胞之能量消 許會導致-較慢的設置迷度。x “的總記憶胞電阻或 欲降低重置所需的電济幅声,t ;相變化記憶元件的大小,及/;在電極;;胞中 材料二電流值通過該相變化 此領域發展的—種方法似力於在-積體 電路結構上形 25 1376800 % 15
-20 成微小孔洞,並使用微量可程式化之電阻封料填充這些微小 孔洞。致力於此等微小孔洞的專利包括:於1997年1]月1] 日公告之美國專利第5,687,112號“Multibit Single Cell Memory Element Having Tapered Contact”、發明人為 Ovshinky ;於1998年8月4曰公告之美國專利第5,789,277 號“Method of Making Chalogenide [sic] Memory Device”、發 明人為Zahorik等;於2000年11月21日公告之美國;專利第 6,150,253 號 “Controllable Ovonic Phase-Change Semiconductor Memory Device and Methods of Fabricating the Same”、發明人為Doan等。 本發明申請人開發了另一種技術,係稱為一相變化橋接 記憶胞,其係形成一非常小塊的記憶材料片於電極之間做為 跨越一薄膜絕緣構件之一電橋。該相變化電橋係易於整合邏 輯電路及積體電路上其他類型電路。參見於2005年06月17 曰申請之美國專利申請第11/115,067號“Thin Film Fuse
Phase Chang RAM and Manufacturing Method,,、發明人為 Lung 等,在此引為參考文獻並為相同申請人所擁有。 一種用以在相變化細胞中控制主動區域尺寸的方式,係 設計非常小的電極以將電流傳送至一相變化材料體中。此微 小電極結構會在相變化材料中類似蕈狀的小區域,即接點部 位,誘發相變化。請參照2002/8/22發證給Wicker之美國專 利 6,429,064 號 “Reduced Contact Areas of Sidewall Conductor”、2002/10/8 發證給 Gilgen 之美國專利 6,462,353 “Method for Fabricating a Small Area of Contact Between Electrodes”、2002/12/31 發證給 Lowrey 之美國專利 6,501 111 7 25 1376800 號 “Three-Dimensional (3D) Programmable Device”、以及 2003/7/1 發證給 HarshiieM 之美國專利 6,563,156 號“Memory Elements and Methods for Making same,,° 要解決熱流問題的一種方法可參見美國專利號第 6,815,704 號專利” Self Aligned Air-Gap 1;hermal Insulation for Nano-Scale Insulated Chalcogenide Electronics(NICE) RAM”嘗 試在該相變化材料的側邊使用空隙或空孔來隔離該記憶胞。 同時也建議使用熱絕緣材料來增加對於該主動區域的隔熱效 果。 同時,用來改善隔熱方法包含以一種隔離該主動丨區域和 電極的方式來形成該相變化元件,像是2006年2月7日申請 之美國專利申凊第 11/348,848 號 “i-Shaped Phase Change 15 Mem〇ry Cell”、發明人為Chen等,在此引為參考文獻並為相 同申請人所擁有。 20 人小尺寸n量產記憶裝置上所需要符 :更=格的規格及製程上_異所衍生的種種問題。因此, 一種具有小尺寸及低重置電流的記憶胞結構’以及 Ϊ 問題及對於罝產符合更嚴格的規格及製程上的變異 域的=置'。再者’更需要生產具有-小的主動相變化區 25 【發明内容) 本發明揭露—種記憶裝置包含—底電極,及在該底電極 丄丄/6800 之上巴含一第一相變化姑料一镇 轡扣爲人, ^相燹化層。在該第一相 夕。層之上^一加熱材料之一電阻加 目 層之上包含-第二相變化好„ M …在4阻加氣 n L 化材7,4之一弟—相變化層,以及在診 料隻x ,員电極遠加熱材料具有一電阻率A 於料-及弟二4目變化材料之該最高電阻率。 丰大 你員她例甲所揭路—記憶胞包Ί丹, % 15
-20 層以及由該介電層之該頂表面延伸之—介層孔。該底;極: 位於該介層孔内之一底部位 jI m,r 於該介層孔之該頂部位之内 及口亥弟一相純層係位 本發明揭露-種用來製造—記憶裝置之方法包含提供一 ,電極延伸至-介電層之—頂表面,以及移除該底電極^一 部位f形成—凹部。該方法包括以具有第-相變化材料層來 填充忒凹部,以及形成一加熱材料層於該第一相變化層之 上。形成一第二相變化材料層於該加熱材料層之上,以及形 成一頂電極材料層於該第二相變化層之上。 y 本發明所揭露之記憶胞具有一主動區域且可以被製造地 特別的小並提供由該頂電極及底電極之一些熱隔離,^此降 低引起一相變化所需要的電流大小。該第一相變化層具有一 寬度,而該寬度係小於該第二相變化層之寬度,同時該第一 相變化層之寬度較佳地小於一般用來形成該記憶胞之—微影 製程的一最小特徵尺寸。在寬度上的差異使電流密度集中^ 該第一相變化層,因此降低在該主動區域中引起一相變化所 需要的電流大小。此外,該加熱器層之該加熱材料具有大於 該第一相變化層及第二相變化層之該相變化材料的―電阻 率,因此,相對於該第一相變化層及該第二相變化層之其他 9 25 4376800 P丨立&呵了該第一相眷Ji- ®另兮每, 熱器層之該部伸的“rfi::二相變化層鄰近於該加 =π,主動區域提供熱隔離:這 辑低引起—線變化所需的電流大小。 絮 式、目直的及優點等將可透過下列說明所附圖 万式及μ專利制獲得充分瞭解。 【實施方式】 法。述實施方式—般將參料定結構實施例及方 容特別:了解的本發賴作縣受限於其詳細描述内 對於:接露的實施例及方法,同時本發明亦可2 15 述之法、和實施㈣實施。本發明本發明所 義。不偈限其範圍’而由申請專利範圍中定 =編:是在各實施例中所使用的元件係共同地參考ί 後續之發明說明將參照至第1圖至第10圖。 第1圖繪示具有延伸通過一介電層110之一底電極12〇、 -相變化材料層130位於該底電極12〇之上、及一頂電極⑽ =於該相變化㈣廣削之上的「綠」記憶胞先前技術之 一剖面圖。一介電層16〇圍繞在該相變化材料層13〇。如在第 1圖中可見,該底電極具有一寬度125小於該頂電極140和該 25 1376800 f f化,料層U0之該寬度145。由於寬度125及寬度M5的 7上二在操作上在鄰接於該底電極120之該相變化材料層】30 的區域中,該電流密度將會為最大,使得該相變化材3 主動區域150具有-「蕈狀」,如第旧中所示。.才抖之" 二由於在該主動區域150的相變化係起因於加熱而發生, °亥底兒極]20的熱傳導會將熱自該主動區域150傳導出去, 因此導致會需要更高的電流來引發在該主動區域15『 噶 15
•20 的相變化。 τ 而 分4 u弟2圖、會示一「柱狀」5己憶胞200先前技術之一剖面圖。 己憶胞2〇〇包含在一介電層210内之一底電極220、一 料柱230位於該底電極22〇之上、一頂電極24〇位 化材,23〇之上。—介電層細圍繞該相:變化材 且古4 _。如在第2圖中可見,該頂電極240及該底電極22〇 主、同的寬度275,亦與該相變化材料柱23G相同。因此該 ^域250可位於遠離該頂電極24〇與底電極22〇之間的 麻域^頂電極24G與底電極22()而會導致一降低的熱庫效 ’在該鄰近主動區域25G至該介電層之間,透 ^相變化材料柱別之侧壁232至該介電層·也具有^ —,20及介電層210之上沈積 ㈣料柱现。在製造此等裝置所引 相變化材料柱23〇之該側壁议之姓刻損 v目文化材料柱230和該底電極22〇之間對準的容 25 1376800 忍限度。 第3圖係繪示依據本發明一實施例之一記憶胞3〇〇的剖 面,,泫έ己憶胞在一第一相變化層330及一第二相變化層 ,間具有一電阻加熱層305。該電阻加熱層包含加熱材料,而 泫加熱材料具有一電阻率大於該第一相變化層330及第二相 變化層335之該最高電阻率。 亀 15
.20 介層孔360由該介電層310之一頂表面312延伸、以 及該第一相變化層33〇係位於該介層孔36〇之一頂部位内, 以及一底電極32〇係為於該介層孔36〇之一底部位内。 »亥底電極320接觸該第一相變化層330並延伸通;過該介 電層310至下方存取電路。該底電極32〇可包含,例如:氮 化鈦或氮化鈕。氮化鈦係為較佳的,因為其與記憶材料之GST 有良好的接觸(如上所述),其係為半導體製程中常用的材 料且在GST轉換的咼溫(典型地介於6〇〇至7⑻。◦)下可 提供良好的擴散障礙。替代地,該底電極划可為氮化減 或氮化鋁钽或更包含例如,一個以上選自下列群組之元素: 鈦、鎢、鉬、鋁、鈕、銅、鉑、銥、鑭、鎳、氧和釕及其組 —頂電極340係為於該第二相變化層335並可包含例 如:任何在上述中該底電極32〇所參考使用的材料。 在操作上,在該頂電極340及該底電極32〇之間的電壓 可以弓ί起電流通過該第一相變化層330、該加熱器層3〇5及該 12 25 1376800 第二相變化層335,從該底電極320流至該頂電極340,或反 之亦然。
15
.20 該主動區域333係該記憶胞300記憶材料引起至少兩種 固相狀態之間轉換的區域。可察知地,該主動區域333該繪 示結構中可以被製造地特別的小’因此降低引起一相變化所 需要的電流大小。該第一相變化層330具有一寬度331,而該 寬度331係小於該第二相變化層335之寬度336,同時該寬度 331較佳地小於一般用來形成該記憶胞300之一微影製程的一 最小特徵尺寸。在寬度331及寬度336之間的差異使電流密 度集中於該第一相變化層330,因此降低在該主動區域333中 引起一相變化所需要的電流大小。此外,該加熱器層305之 該加熱材料具有大於該第一相變化層330及第二相變化層335 之該相變化材料的一電阻率’因此,相對於該第一相變化層 33〇及έ亥第二相變化層335之其他部位,提高了該第一相變化 層330及該第二相變化層335鄰近於該加熱器層3〇5之該部 位的該溫度。如圖中所繪示該頂電極34〇及該底 間被該主動區域333所隔開,而使得該第—相變化層|33〇及 該第二相變化層335之該剩餘部位對該主動區域^提 隔離,這樣也可以幫助降起—相變化所需的電流大小、:、 ^加熱器層305的該電阻係與該加熱器層3〇5之 3〇7和該加熱體之該電阻率成正比。増加 ς 鳥的能量雜上將無法提供^處=3,憶胞 胞300之較慢讀取程序。然而, 可肊導致该記憶 操作中,該加熱H層3G5在溫度上辦力2的解釋中,在 電阻率成正比。因此需要增加該力‘:電=熱 25 1376800 樣可以降低在該主動區域333引起一相變化所需要的電流大 」、。因此,當該加熱材料的該電阻率高時,較佳地,該加熱 器層305的厚度307係非常的薄。 自動加熱元件的溫度變化,一電 忽略熱庫效應不談 流I可由下式導出:
AT I2-Rt % 度 M-s (1) 其中N為該元件之質量,s為該材料的比熱係數,T為溫 I為該電流,R為該電阻,以及t為時間。 更者,質量Μ、電流I及電阻R可由下式表示之:
M = A· h · D (2) I-J · A (3) R-P.h (4) 15 A 其中Α為該電流流經該元件之該剖面面積,h為該元件 兩度* D為該材料之密度5 J為電流密度^ p為該材料的電阻 率。結合第(2)式至第(4)式進第(1)式中可導出:
AT
J2-p- s-D (5) 因此,可由上述第(5)式該溫度變化係與該材料的該電阻 25 率成正比。 在一實施例中,該加熱材料的該電阻率係大於該第一相 !4 1376800 纪化層330及第二相變化材料33 帝 阻率約Μ倍至⑽倍之間’在另—實施例中係 50倍之間。 八π 口芏 #此外,該電阻加熱層3〇5之該厚度3〇7係較佳地小於該 第-相變化層330之厚度。在—些實施例中,該厚度3〇7係 小於或等於10奈米,例如在丨奈米至5奈米之間。 9〇 15 該電阻加熱層305在-些實施例中係摻雜雜質來修飾電 Ρ且率’例^可包含高度摻雜的氮化鈦、氮化叙、嫣化欽、氮 化矽鈦或氮化矽鈕。用來增加該電阻率的雜質例如可包含 氮、碳、或矽。在實施例中,該該電阻加熱層3〇5係藉由一 電漿氣相沈積PVD製程來形成,增加摻雜雜質可藉由例如: 使用一高摻雜標靶及/或增加氮氣流量來達成。在一化學氣相 沈積CVD或原子氣相沈積ALD製程中,例如可以藉由增加 氮氣流量及/或降低這些製程的操作溫度來達成增加摻雜之目 的。
.20 在一實施例中,該電阻加熱層305係藉由沈積氮化鈦並 使用一 TDMAT (Ti[N(CH3)2]4)前驅物,來產生大量的雜質 (主要是碳)並造成一高電阻率。而氫氣電漿處理可用來移 除該碳及降低該電阻率。 該記憶胞300的實施例’對該第一相變化層33〇及該第 二相變化層335,包括相變化記憶材料,包括硫屬化物材料與 其他材料。該第一相變化層330和該第二相變化層335_可包 含相同或相異之相變化材料。硫屬化物包括下列四元素之任 25 1376800 週石西(S〇、以及碑(Te),形成元素 ϊΐίΐΓ族的部分。铺化物包括將—硫屬元素與一 文马正電性之元素或自由基結合 將硫屬化合物與其他物質:過;:义b°=金土: 合金通常包括-偏上選自元;^^,Λ° H^物 辛Φ如 &屬化合物合金包括下列元 —個以上的複合物:録(Sb)、鎵(叫、銦㈤、以及 文f 許乡以婦化為基叙記㈣擔已缝描述於技術 錯/錄/ ^ 7列合金:錄/錄、鋼/録、銦/石西、銻/碲、錯/碲、 /碲蚀/、鋼/錄7蹄、錄/謝碲、錫/銻/蹄、銦7録/鍺 '銀/銦/錄 ^八,/錫/錄歸、鍺/錄/石西/碎、以及碎/錯/錄/硫。在錯碌
Sit中,可以嘗試大範圍的合金成分。此成分可以下列 15 20 的i i ί不:祕心1〇(Ka+b),其中a與b代表了所組成元素 的原子總數為100%時,各原子的百分比。 也1在—些實施例中,硫屬化物及其他相變化材料摻雜雜質 _ 2飾導電性、轉換溫度、熔點及使用在摻雜硫屬化物記憶 =件之其^特性。使用在摻雜硫屬化物代表性的雜賀包含 t夕、氧、二氧化矽、氮化矽、銅、銀、金、鋁、氧化鋁、 ,、氧化組、氮化叙、鈦、氧化鈦。可參見美國專利第6,_,504 就專利及美國專利申請號第2005/0029502號專利。 -一位研究員描述了最有用的合金係為,在沈積材料中所 包含之平均碲濃度係遠低於70%,典型地係低於60%,並在 土般型態合金令的碲含量範圍從最低23%至最高58%,且最 佳係介於48%至58%之碲含量。鍺的濃度係高於約5%,-且其 在材料中的平均範圍係從最低8%至最高30%,一般係低於 16 1376800 50%^取佳地,鍺的濃度範圍係介於8%至4〇%。在此成分中 所剩卜的王要成分則為録。(〇vshinky (112專利,欄m) 由另一研究者所評估的特殊合金包括Ge2Sb2Te5、GeSb2Te4、 以及 GeSb4Te7。( Nob〇ru %mada,”p〇iential 〇f
Phase-change 〇ptical Disks f〇r High_Data.Rate Rec〇rding^ W/hj卿,ppj·3%·7))更一般地,過渡金屬如絡⑼、 鐵(Fe)、錄(Ni)、鈮(Nb)、鈀(pd)、鉑(pt)、以及上述之混人物 或合金,可與鍺/銻/締結合以形成一相變化合金其包括有^程 式化的電阻性質。可使用的記憶材料的特殊範例,係如 〇VShinSky‘m專利中欄1M3所述,其範例在此係列入參考。 ,變化合金能在此細胞絲通道區域_其 15 20 :結構狀態與為一般結晶固』態 構狀紅間切換。這些材料至少為雙穩定態。此詞 ,非日日」係用以指稱一相對較無次序之結構,其較之一 晶更無次序性,而帶有可仙之特徵 = ,值。此詞彙「結晶態」係用以指稱—相對較有 、,之非晶態更有次序,因此包括有可偵測的微。 晶態更低的電阻值。典型地,相變化材料切:二非 完全非晶態之間所有可偵測的 態之改變而影響之材料特中 子= ^結晶癌之間的灰階部分。此材料中的電性質村it 態切換至另 I目父化合金可藉由施加一電脈衝而從—種相 17 25 υ/οδυυ 相轉i二:硯Ϊ指出,—較短、較大幅度的脈衝傾向於將 的腺衝傾2、相忍改麦成大體為非晶態。一較長、較低幅度 較短衝^於將相轉騎料的相態改變成大體為結晶態。在 的鍵結量,夠大因此足以破壞結晶結構 態。人因此可⑽止料再次制成結晶 相變ί匕人*曲線係取決於經驗或模擬,特別是針對一特定的 GST,/在本文中所揭露之該據化材料並通常被稱為 龜 15
.20 明中闲„是亦可以使用其他_的相變化材料。在本發 ΑΑ所貫施的相變化唯讀記憶體(PCRAM)係Ge2Sb2Te5。 代表的硫屬化物材料可整理如下:GexSbT其中X 盆2_2:一5。其他成分為X: 〇〜5; y: 〇〜5; z: 〇〜1〇。以氮石夕欽或 八他兀素摻雜之GeSbTe亦可被使用。可以利用pvD賤鍍或 ,,(M=gnetron)濺鍍方式,其反應氣體為氬氣、氮氣、及/或 ,氣、壓力為1 mTorr至1〇〇 mTorr。此沈積步驟一般係於室 '凰下進行。一長寬比為1〜5之準直器(collimater)可用以改良其 填入表現。為了改善其填入表現,亦可使用數十至數百伏斗寺 之直流偏壓。另一方面,同時合併使用直流偏壓以及準直器 亦是可行的。有時需要在真空中或氮氣環境中進行一沈積後 退火處理,以改良硫屬化物材料之結晶態。此退火處理的溫 度典型地係介於100°C至400°c,而退火時間則少於3〇分鐘^ 如同上述,該加熱器層305之該加熱材料具有大於該第 一相變化層330及第二相變化層335之該相變化材料的一電 阻率,因此,相對於該第一相變化層330及該第二相變化層 335之其他部位,提高了該第一相變化層330及該第二相變化 層335鄰近於該加熱器層305之該部位的該溫度,且降低因 18 25 1^/6800 該頂電極340及該底電極320所引起之該熱庫效應。 嘅 15
•20 第4A圖繪示類似第3圖但省略了該加熱器層3 憶皰4〇〇的-到面圖。在沒有該加熱器層3〇5的情—記 $介電層4!0之該頂表面4Π之下該相變化材料43〇之2 =32内的大量電流密度,會導致該底電極物附近^ ^產生’如第4B圖所標示的深色部位係指出較高的载= 生。由於該底電極42G之高熱傳導性亦會使得該區域 有大量的熱量流失,如第4C圖繪示深色部位沙止較高的j ^。在該記憶胞400操作過程中,㈣區域432内之= 熱量流失會導致需要更高的電流來引起所需的相變化。°"阿 ,5圖至第8圖係繪示依據本發明所述製造記憶胞方 之一貫施例的製造步驟,在後述中將不重複解釋關於材料、 厚度等或在前述中已經揭露之類似資訊。 第5圖繪示形成一結構該製程之第一步驟的一剖面圖, 該結構包含一底電極500由該介電層310之該頂表面延伸並 耦接至存取電珞(未示),像是存取電晶體或二極體及字元線 等。該底電極500具有一直徑331,而該直徑331較佺地小於 一般用來製造該存取電路(未示)之一微影製程的一:最小特 徵尺寸。 該底電極500具有一次微影直徑331以及可形成該介電 層310例如使用2007年6月18曰申請之美國專利申請案第 11/764,678 號專利”Method for Manufacturing a Phase Change
MemOiy Device with Pillar Bottom Electrode”所使用的方法、材 25 1376800 料、製程,並在此引為參考文獻。舉例來說,可以在存取電 路(未不)之該頂表面上形成一層電極材料,接下來,藉由 圖案化,電極層上之一光阻層,並使用標準照相微影技術來 形成覆盍於該底電極5〇〇之該位置的一光阻幕罩。接著,使 用像是氧氣電漿來剪裁該光阻幕罩以形成覆蓋於該底電極 500之泫位置具有次微影尺寸的罩幕結構。接著使用該:剪裁的 光阻幕罩來實該該電極材料層,因此形成具有次微影真徑331 之該底電極。接著形成介電材料310並平坦化而得到第5圖 所繪不之結構。 龜 15
.20 在另一實施例中,例如可以使用20〇7年9月14日申請 之美國專利申請案第11/855,979號專利”Phase Change
Memory Cell in Via Array with Self-Converged Bottom Electrode and Method for Manufacturing”所使用的方法、材 料、製程來形成該底電極500及該介電層31〇,並在此引為參 考文獻。舉例來說,可以在該存取電路之該頂表面上形成該 介電層310,接著依序形成一隔離層及一犧牲層。接著,在該 犧牲層之上形成具有接近或等於用來產生該幕罩製程之該最 小特徵尺寸開口的一罩幕,而該開口係位於該底電極5〇〇之 上。接著,使用該幕罩選擇地蝕刻該隔離層及該犧牲層,因 此在該隔離層和該犧牲層形成介層孔,並露出該介電層310 之一頂表面。在移除該罩幕之後,在該介層孔上實施一選擇 底切蝕刻,使得該隔離層被蝕刻而留下未損壞之該犧牲層及 °亥>>1電層310。接著在該介層孔内形成一填充材料,由於該選 擇底切钱刻製程使得在每一介層孔内的填充材料中形成一自 動對準空孔。接著執行一非等向性實施製程於該填充材料以 打開该空孔,並繼續飯刻直到該介電層31〇,該介電層係 20 25 1376800 4出於該空孔下方之該區域,因此在每—介層孔内形成包含 填充材料之一側壁子。該側壁子具有實質地由該空孔之該尺 /寸所決定的〆開口尺寸,因此可以比一微影製程之該最小特 徵尺寸還來的小。接著使用該側壁子做為一蝕刻罩幕味蝕刻 该介電層310’因此在該介電層310内形成具有小於談最小特 徵尺寸之一直徑的開口。接著,使用像是化學機械研磨法 CMp)的平坦化製程來移除該隔離層及該犧牲層並形成該 底電極500,得到第5圖中所繪示之該結構。 % 由第5圖所繪示之該結構餘刻該底電極5〇〇之一部位, 以產生在一底電極320上具有一凹部之結構’如第6圖所繪
TfT 〇 接下來,在第6圖中的凹部600内形成包含具有一第一 15相變化材料之一相變化層,並平坦化,以產生在該底電極320 上具有一相變化層330之結構,如第7圖所繪示。 • 接著,在第8圖所繪示的結構上形成一多層結構,包含 依序形成一電阻加熱材料層、一第二相變化材料層、及一頂 2〇 ,極材料層,並圖案化以形成第9圖所繪示之該記憶胞30〇, 該記憶胞300具有包含電阻加熱材料之一電阻加熱器3〇5、包 含第二相變化材料之一第二相變化層335、包含頂電極材料之 一頂電極340。 如第9圖所示,顯示本發明所述實施例之一積體電路的 簡化方塊圖。該積體電路1 〇〇〇包含使用本發明所述具有一加 熱中心PCRAM之一記憶陣列1 〇〇5。一列解碼器1 〇 1 〇具有讀 1376800 取、5又置、里置模式係親接至在該記憶陣列中⑽5沿著 置的複數個字元線1G15。—行解碼器麵_接至在該纪措 陣列中祕沿著行安置的複數個位元線·,以讀取、設置;; 重iif意陣列1005中之記憶胞。位址係經由· 解碼器删與—列解碼器1G1G。在方塊_ 中的感顧大Θ與貧料輸人結構,包含該讀取、設置、重置 模式的電流源,係經由—資料匯流排1G35 料ί從積體電路1000的輸入/輸出蜂 '或積體 ㈣夕Μ之其他資料來源,而經由資料輸人線刪以將資料 傳輸至方塊1030中的資料輸入結構。其他電路1065係包括 15 =,,,,,例如一泛用目的處理器或特定目的應 βα曰^可提供單晶;i L力能之模組組合其係由系統於 曰片之,憶_所支援。資料储方塊则中的感測放大 裔、經由貧料輸出線1G45、而傳輸至積體電路麵之輸入, 輸出埠或其他位於频電路麵内部或外部之:#料目:的地。 接川在本實施财所使_控制11,使用了偏壓調整狀態機 # 構刪,並控制了偏壓調整供應電壓及電流源1055的應用, 例=讀取、5又置、重置、對於該字元線及位元線之電壓確認 2〇及:、電流確認,以及使用一存取控制流程來控制該字元線/位 •兀線操作。該控制器可利用特殊目的邏輯電路而應用,如孰 習該項技藝者所熟知。在替代實施例中,該控制器包括了通 用^的處理器’其可使於同—積體電路,以執行—電腦程式 裝置的操作。在又—實施例中,該控制器係由特殊目 25的邏軏電路與通用目的處理器組合而成。 第10圖涂、.’a示—g己憶障列1 1 〇〇的示意圖,其可以使用 22 1376800 的記憶胞而實施°四個記憶胞⑽、題、 如第u 具Λ各㈣記憶元件1112、ni4、m6、川8, 以包含上百僅彳、表—_的,分=此陣列可 在,10圖的示意圖之中’共同源極線⑽,字元線 大致-著4 =致Γ丁於”由而排列。位元線1126、1128係 龜 15
• 20 動器y軸解碼㈣-字元線驅 H22 uiA 又 置” 5貝取模式)係耦合至字元線 、124。用以設置、重置以及讀取模式的位七線電流源 、二解碼器與感測放大器(未示)係祕至位元線1126、 山8。共同源極線112〇係_至源極線終端電路⑽,例如 端。此源極線終端電路1154可包含偏壓電路(例如 與電流源)’以及解碼電路,以在某些實施例中施加偏 &女排(而非接地)至源極線。 共同源極線1120係耦接至記憶胞11〇211〇411〇611〇8 的源極終端。字元線1122係輕接至記憶胞則2、11〇6的閘極 ”端。子元線1124係輕接至記憶胞11〇4、11〇8的問極終端。 包含有各自的記憶元件1112、1114的記憶胞11〇2、11〇4 係為代表性記_。該記憶元件⑴2祕該記憶胞脈之源 極至位元、線1126。相似地,該記憶元件1114耗接該記憶胞11〇4 之源極至位το線II26。在操作上,電流源1152係以低電流讀 =模式操作…種以上的巾間電流設定模式、以及較高電流 置模式刼作。在較咼電流重置模式時,一穿過選定記憶胞 (.列如.包含有§己憶元件11]2的記憶胞 1102)的電流路徑 23 25 1376800 Π 80,係藉由施加一電壓及電流至位元線1126,施加於該字 元線1122及源極線1120之電壓係足以啟動記憶胞no】的有 取電晶體,使得電流流經源極線1120。 相似地,在低電流讀取模式,一通過選定記憶胞(例如: 包含有記憶元件1114的記憶胞1104)的電流路徑1182,係藉 由施加一電壓及電流至位元線1126而建立,在字元線112^ 及源極線1120之電壓係足以啟動記憶胞11〇4的存取電晶體並 提供電流至源極線1120。 ' 在設置模式時(用於一種以上的中間電流位階),:係使能 一存取電晶體,如同前述讀取模式。 本發明之優點包含具有較小細胞大小之記憶胞
多照特定示範實施例來加以描述。 及改變皆不脫離本發明之精神範嘴 本發明係已參照
°所做各種 疇。因此, 於隨附申請專
、專利申請及紙本文件皆 24 1376800 【圖式簡單說明】 第1圖繪示-「蕈狀」相變 第2圖繪示-「挺狀」相變化記;胞二;:: 第3圖繪示依據大』之…面圖。 第仏圖第 =;;、=的:記憶胞之剖面圖。 剖面圖。 如囫但$略該加熱器層的-記憶皰之 化在操作中第4A圖所繪示該記憶胞,相變 化層::量=在操作+第4A圖所繪示該記憶胞之該相變 第5圖至第8圖係本發明所述之記憶胞的—製。 圖 第9圖係本發明所述—實施例之積體電路之 間明方塊 第10圖係本發明所述記憶胞之一記憶陣列 15 【主要元件符號說明】 • 110、160、210、260、310、360、410 介電層· 120、220、320、420、500 底電極 125、145、33卜 336 寬度 20 130 相變化材料層 140、240、340 頂電極 150 ' 333 主動區域 200、300、400、1102、1104、1106、1108 記憶胞 230相變化材料柱 25 232 側壁 305 電阻加熱層 25 1376800 307 厚度 312、4]2 頂表面 330 第一相變化層 331 直徑
335 第二相變化層 600 凹部 1000 積體電路 1005 記憶陣列 1010 列解碼器 ft) 1015、1122、1124 字元線 1020 行解碼器 1035 資料匯流排 1045 資料輸出線 1050 偏壓調整狀態機構 15 1055 電流源 1060 匯流排 1065 其他電路
1112、1114、1116、1118 記憶元件 1120 共同源極線 1126、1128 位元線 1150 字元線驅動器 1152 位元線電流源 1154 源極線終端電路 -20
Claims (1)
1376800 中華民國發明專利申請案第097107523號 無劃線之申請專利範圍替換本 中華民國101年3月/ί«曰送呈 十、申請專利範園
1· 一種記憶裝置包含·· 二=電層,具有一頂表面; 和-自該介電層之該頂表面延伸,並具有一底部位 二二,極:位於該介層孔之該底部位之内;. 今頂部位化層,其包含U變化材料於該介層孔之 ΐ兩種固她ί與該底電極連接’該第—相變化材料具有至 上,=且料在該第一相變化層之 第:相第,,其包含一第二相變化材料在 執 、頂電種固相狀態;-、 15 20 ,綠蝴—及㈣ 2. 如申請專利範圍第i項所述 具有4度’ _寬度小於料形成觀=相變化層 程之一最小特徵尺寸。 〜衣置的一微影製 3. 如申請專利範圍第2項所述之 I 該第二相變化層及翻電極形成二層堆加熱層、 之該頂表面上。 隹且覆盖於該介電層 4. 如申5青專利範圍第1項所述之步 -電阻率,其係大於該第-及第二目變;材料具有 τ <硪攻向電阻 27 25 1 · 5倍至1 〇〇倍之間。 5.如申請專利範圍第4項所述之聿 :電阻率,其敍於該第―及第二相^中該加熱材料具有 率約4倍至50倍之間。 ^化材料之該最高電阻 如申明專利範圍第1項所述之農 ,氮化欽、氮化组、継、氣切錢:===含 10 7摻m利範㈣1項所述之裝置,其中該加崎料包含 或竭於氮化鈦、氮化鈕、鎢化鈦、氮化矽鈦、 15 圍第1項所述之I置,其中該第—及第二相 支化材枓包含相同的相變化材料。 20 圍第1項所述之農置,其中該第—及第二相 支材枓包含不同的相變化材料。 1曰转專利域第1項所述之裝置,其中每—該第一及第 材料包含選自於以下群組兩者或更多之結合:鍺、 石々、一、硒、銦、鈦、鎵、鉍、錫、銅、鈀、鉛、銀、硫、 石夕、乳、碟、石申、氮及金。 ^用來製造—記憶裝置之方法,該方法包含: “一底電極延伸至—介電層之-頂表面; 28 25 1 丄:wo期 移除該底電極之一部位以形成一凹部; 層具真有充至T兩T固:弟相:相變化材料層,而該第-相變化材料 形成一加熱材料層於該第一相變化層之上; 相^匕材料層於該加熱材料層之上,而該第二 曰一有至少兩種固態相;以及 頂電極材料層於該第二相變化層之上; μ 加熱材料具有—電阻率,其係大於該第—及第二相 舰材料之該最高電阻率。 力汉弟相 g包$申5月專利範圍第11項所述之方法,其中填充該凹部步 15 面之以2灸化材料層於該凹部之内及該介電層之該頂表 千坦化該第—相變化材料相«出該介電層之該頂表面。 材料^申利車巳圍第12項所述之方法’更包含侧該加熱 20 -多目變化材料層及該頂電極材料層,因而形成 層堆唛覆盍於該介電層之該頂表面上。 利範11第11項所述之方法,其中該第一相變化 製程特=度小於用來形成該記憶裝置的-微影 圍第11項所述之方法,其中該加熱材料層 "虿j於或4於約10nm之一厚度。 29 25 1376800 如申請專利範圍第n項所述之方法,其中該加熱材料具 電阻率,其係大於該第一及第二相變化材料之該最 阻率約1.5倍至1〇〇倍之間。 。 如=請專利範圍第11項所述之方法,其中該加熱材料包 s摻雜氮化鈦、氮化叙、嫣化鈦、氮化石夕欽、或氮化石夕鈕之 如^月專利氣圍第U項所述之裝置,其中該加熱材料包 二乡雜氧化石夕或氮化係於氮化欽、氮化组、鑛化欽、氣化石夕 欽 '或氮化石夕麵之一。 15 =變^^,圍第U項所述之方法,其中該第—及第二 交化材枓包含相同的相變化材料。 相變專利範圍帛11項所述之方法,其中該第一及第二 相邊化材料包含不_相變化材料。 第二t目以二乾勺圍^11項所述之方法’其中每-該第-及 鍺、才枓選自於以下群組兩者或更多之結合: 栌、石々"硒、銦、鈦、鎵、鉍 '錫、銅、鈀、鉛、銀、 "矽、氧、磷、砷、氮及金。 30
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2008
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US8158965B2 (en) | 2012-04-17 |
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US20090194758A1 (en) | 2009-08-06 |
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