TWI366742B - - Google Patents

Info

Publication number
TWI366742B
TWI366742B TW092136894A TW92136894A TWI366742B TW I366742 B TWI366742 B TW I366742B TW 092136894 A TW092136894 A TW 092136894A TW 92136894 A TW92136894 A TW 92136894A TW I366742 B TWI366742 B TW I366742B
Authority
TW
Taiwan
Application number
TW092136894A
Other versions
TW200422775A (en
Inventor
Kouichi Fujiwara
Eiichi Kobayashi
Tsutomu Shimokawa
Atsushi Nakamura
Eiji Yoneda
Yong Wang
Isao Nishimura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200422775A publication Critical patent/TW200422775A/zh
Application granted granted Critical
Publication of TWI366742B publication Critical patent/TWI366742B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerization Catalysts (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092136894A 2002-12-28 2003-12-25 Radiation-sensitive resin composition TW200422775A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002383840 2002-12-28

Publications (2)

Publication Number Publication Date
TW200422775A TW200422775A (en) 2004-11-01
TWI366742B true TWI366742B (zh) 2012-06-21

Family

ID=32708753

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092136894A TW200422775A (en) 2002-12-28 2003-12-25 Radiation-sensitive resin composition

Country Status (8)

Country Link
US (1) US9348226B2 (zh)
EP (1) EP1602975A4 (zh)
JP (1) JP5024318B2 (zh)
KR (1) KR101119783B1 (zh)
CN (1) CN1732408B (zh)
AU (1) AU2003296188A1 (zh)
TW (1) TW200422775A (zh)
WO (1) WO2004061525A1 (zh)

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WO2006035790A1 (ja) 2004-09-30 2006-04-06 Jsr Corporation 共重合体および上層膜形成組成物
JP4485913B2 (ja) * 2004-11-05 2010-06-23 東京応化工業株式会社 レジスト組成物の製造方法およびレジスト組成物
US20090098489A1 (en) * 2004-11-15 2009-04-16 Tokyo Ohka Kogyo Co., Ltd. Method for forming resist pattern
TWI530759B (zh) * 2005-01-24 2016-04-21 富士軟片股份有限公司 適用於浸漬曝光之正型光阻組成物及使用它之圖案形成方法
CN101395189B (zh) * 2006-03-31 2013-07-17 Jsr株式会社 含氟聚合物及其精制方法以及感放射线性树脂组合物
JP5430821B2 (ja) * 2006-09-19 2014-03-05 東京応化工業株式会社 レジストパターン形成方法
JP4809378B2 (ja) * 2007-03-13 2011-11-09 信越化学工業株式会社 レジスト下層膜材料およびこれを用いたパターン形成方法
JP2008268920A (ja) * 2007-03-28 2008-11-06 Fujifilm Corp ポジ型レジスト組成物およびパターン形成方法
JP5077569B2 (ja) * 2007-09-25 2012-11-21 信越化学工業株式会社 パターン形成方法
US7803521B2 (en) * 2007-11-19 2010-09-28 International Business Machines Corporation Photoresist compositions and process for multiple exposures with multiple layer photoresist systems
TW201030464A (en) * 2008-11-26 2010-08-16 Jsr Corp Radiation-sensitive resin composition
CN102483574B (zh) * 2009-07-17 2014-07-09 Jsr株式会社 放射线敏感性树脂组合物和化合物
CN102576681A (zh) * 2009-11-13 2012-07-11 日立化成工业株式会社 半导体用粘接剂组合物、半导体装置以及半导体装置的制造方法
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WO2012046607A1 (ja) 2010-10-04 2012-04-12 Jsr株式会社 パターン形成方法及び感放射線性樹脂組成物
JP5940455B2 (ja) * 2010-10-15 2016-06-29 Jsr株式会社 レジストパターン形成方法
WO2012053527A1 (ja) 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
JP5903833B2 (ja) 2010-11-09 2016-04-13 住友化学株式会社 樹脂、レジスト組成物及びレジストパターン製造方法
KR101830595B1 (ko) * 2010-11-09 2018-02-21 스미또모 가가꾸 가부시키가이샤 수지 및 포토레지스트 조성물
JP5866100B2 (ja) 2011-04-13 2016-02-17 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US20130302735A1 (en) * 2011-11-03 2013-11-14 Rohm And Haas Electronic Materials Llc Monomers, polymers and photoresist compositions
EP2781550B1 (en) 2011-11-09 2019-10-16 JSR Corporation Directed self-assembling composition for pattern formation, and pattern-forming method
KR102523252B1 (ko) * 2015-03-19 2023-04-20 다우 글로벌 테크놀로지스 엘엘씨 광조절된 라디칼 중합을 사용하는 적층 가공 방법
WO2016167323A1 (ja) * 2015-04-17 2016-10-20 Jsr株式会社 立体造形物の製造方法
CN104834182B (zh) * 2015-05-20 2019-05-03 杭州福斯特应用材料股份有限公司 一种具有高分辨率和优异掩孔性能的感光干膜
JP6583136B2 (ja) * 2016-05-11 2019-10-02 信越化学工業株式会社 新規スルホニウム化合物及びその製造方法、レジスト組成物、並びにパターン形成方法
US10074626B2 (en) * 2016-06-06 2018-09-11 Shin-Etsu Chemical Co., Ltd. Wafer laminate and making method
JP6973265B2 (ja) * 2018-04-20 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7156205B2 (ja) * 2018-08-29 2022-10-19 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7099418B2 (ja) * 2018-09-18 2022-07-12 信越化学工業株式会社 レジスト材料及びパターン形成方法

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Also Published As

Publication number Publication date
JP5024318B2 (ja) 2012-09-12
US9348226B2 (en) 2016-05-24
CN1732408B (zh) 2010-04-21
JP2009175746A (ja) 2009-08-06
KR20050089859A (ko) 2005-09-08
US20060234154A1 (en) 2006-10-19
EP1602975A4 (en) 2009-12-02
CN1732408A (zh) 2006-02-08
KR101119783B1 (ko) 2012-03-23
AU2003296188A1 (en) 2004-07-29
WO2004061525A1 (ja) 2004-07-22
EP1602975A1 (en) 2005-12-07
TW200422775A (en) 2004-11-01

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