TWI362571B - Stripper composition for photoresist - Google Patents

Stripper composition for photoresist Download PDF

Info

Publication number
TWI362571B
TWI362571B TW96118832A TW96118832A TWI362571B TW I362571 B TWI362571 B TW I362571B TW 96118832 A TW96118832 A TW 96118832A TW 96118832 A TW96118832 A TW 96118832A TW I362571 B TWI362571 B TW I362571B
Authority
TW
Taiwan
Prior art keywords
copper
aluminum
photoresist
substrate
composition
Prior art date
Application number
TW96118832A
Other languages
English (en)
Chinese (zh)
Other versions
TW200801855A (en
Inventor
Hee Han
Min-Choon Park
Kyung-Jun Kim
Sung-Woo Seo
Hyok-Joon Kwon
Kyoung-Ho Ahn
Byung-Kyu Choi
Sung-Joon Min
Ji-Young Hwang
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Publication of TW200801855A publication Critical patent/TW200801855A/zh
Application granted granted Critical
Publication of TWI362571B publication Critical patent/TWI362571B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW96118832A 2006-05-26 2007-05-25 Stripper composition for photoresist TWI362571B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060047668 2006-05-26

Publications (2)

Publication Number Publication Date
TW200801855A TW200801855A (en) 2008-01-01
TWI362571B true TWI362571B (en) 2012-04-21

Family

ID=38778797

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96118832A TWI362571B (en) 2006-05-26 2007-05-25 Stripper composition for photoresist

Country Status (5)

Country Link
JP (1) JP4773562B2 (ko)
KR (2) KR100913048B1 (ko)
CN (1) CN101454872B (ko)
TW (1) TWI362571B (ko)
WO (1) WO2007139315A1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US9834746B2 (en) 2013-10-21 2017-12-05 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on surfaces
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions

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KR101141987B1 (ko) * 2008-08-20 2012-05-17 엔엘티 테크놀로지 가부시키가이샤 용해 변형용 약액 및 용해 변형 처리 방법
TWI416595B (zh) * 2008-09-15 2013-11-21 Taiwan Semiconductor Mfg 製造半導體裝置的方法
TWI467349B (zh) * 2008-11-19 2015-01-01 Toagosei Co Ltd 具有經圖案化的導電性高分子膜之基板的製造方法及具有經圖案化的導電性高分子膜之基板
JP5288144B2 (ja) * 2008-12-25 2013-09-11 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物、積層金属配線基板のフォトレジスト剥離方法及び製造方法
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
WO2011065603A1 (ko) * 2009-11-26 2011-06-03 주식회사 엘지화학 포토레지스트 스트리퍼 조성물 및 이를 이용한 포토레지스트 박리방법
TWI405053B (zh) * 2009-11-27 2013-08-11 Lg Chemical Ltd 光阻剝離組成物及剝離光阻之方法
KR101169332B1 (ko) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 포토레지스트 박리액 조성물
KR101721262B1 (ko) * 2010-09-01 2017-03-29 동우 화인켐 주식회사 레지스트 박리액 조성물 및 그를 이용한 박리방법
CN102012645A (zh) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 一种光刻胶剥离液
CN102436153B (zh) * 2011-10-28 2013-06-19 绍兴文理学院 印花网版感光胶剥离剂
KR101880308B1 (ko) * 2012-05-24 2018-07-19 동우 화인켐 주식회사 Ｔｆｔ 제조용 레지스트 박리제 조성물 및 이를 이용한 ｔｆｔ의 제조방법
JP6144468B2 (ja) * 2012-08-22 2017-06-07 富士フイルム株式会社 レジスト剥離方法および半導体基板製品の製造方法
KR101946379B1 (ko) * 2012-11-20 2019-02-11 주식회사 동진쎄미켐 포토레지스트 박리액 조성물 및 포토레지스트의 박리방법
KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
WO2014210328A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Methods of depositing a metal alloy film
JP5977727B2 (ja) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 基板洗浄方法、基板洗浄システムおよび記憶媒体
KR101710170B1 (ko) * 2014-08-20 2017-02-27 주식회사 엘지화학 포토레지스트용 스트리퍼 폐액의 재생 방법
KR101586453B1 (ko) * 2014-08-20 2016-01-21 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 이용한 포토레지스트의 박리방법
CN108535971B (zh) * 2017-03-03 2023-09-12 易案爱富科技有限公司 光致抗蚀剂去除用剥离液组合物
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
GB2568516A (en) * 2017-11-17 2019-05-22 Flexenable Ltd Organic semiconductor devices
TWI646222B (zh) * 2018-04-25 2019-01-01 達興材料股份有限公司 用於蝕刻一含銅或銅合金層及含鉬或鉬合金層的多層薄膜之蝕刻液組成物及利用此蝕刻液組成物之蝕刻方法以及利用該蝕刻方法以製造顯示裝置或含igzo半導體的方法
CN111223756B (zh) * 2018-11-26 2022-03-29 长鑫存储技术有限公司 晶圆清洗方法及半导体器件制作方法
CN111487845A (zh) * 2019-01-29 2020-08-04 山东浪潮华光光电子股份有限公司 一种可以直接剥离的led管芯电极掩模图形的制作方法
WO2020194419A1 (ja) * 2019-03-25 2020-10-01 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN111880384B (zh) * 2020-08-10 2022-03-29 深圳市创智成功科技有限公司 用于去除晶圆表面光刻胶的环保型去胶剂

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Publication number Priority date Publication date Assignee Title
JP3773227B2 (ja) * 1997-10-16 2006-05-10 東京応化工業株式会社 レジスト用剥離液組成物およびこれを用いたレジスト剥離方法
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
JP2003177556A (ja) * 2001-12-12 2003-06-27 Sharp Corp フォトレジスト剥離剤組成物および剥離方法
JP3738992B2 (ja) * 2001-12-27 2006-01-25 東京応化工業株式会社 ホトレジスト用剥離液
KR101017738B1 (ko) * 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 포토레지스트 박리제 조성물 및 세정 조성물
KR100544889B1 (ko) * 2003-05-15 2006-01-24 주식회사 엘지화학 포토레지스트용 스트리퍼 조성물
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
JP4056442B2 (ja) * 2003-08-20 2008-03-05 株式会社オリンピア 弾球遊技機
KR20050110955A (ko) * 2004-05-20 2005-11-24 금호석유화학 주식회사 포토레지스트용 스트리퍼 조성물 및 이를 포토레지스트박리에 사용하는 방법
JP2006106616A (ja) * 2004-10-08 2006-04-20 Tokyo Ohka Kogyo Co Ltd ホトレジスト除去用処理液および基板の処理方法
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9834746B2 (en) 2013-10-21 2017-12-05 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on surfaces
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10253282B2 (en) 2013-12-06 2019-04-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10415005B2 (en) 2013-12-06 2019-09-17 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10696933B2 (en) 2013-12-06 2020-06-30 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10927329B2 (en) 2013-12-06 2021-02-23 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11286444B2 (en) 2013-12-06 2022-03-29 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11401487B2 (en) 2013-12-06 2022-08-02 Fujifilm Electronics Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11618867B2 (en) 2013-12-06 2023-04-04 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11639487B2 (en) 2013-12-06 2023-05-02 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions

Also Published As

Publication number Publication date
WO2007139315A1 (en) 2007-12-06
CN101454872A (zh) 2009-06-10
CN101454872B (zh) 2011-04-06
KR100913048B1 (ko) 2009-08-25
TW200801855A (en) 2008-01-01
JP2009538456A (ja) 2009-11-05
JP4773562B2 (ja) 2011-09-14
KR20070114037A (ko) 2007-11-29
KR20070114038A (ko) 2007-11-29

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