1361104 九、發明說明： 【發明所屬之技術領域】 _本發明係有關含有包含三氟化氯（C1F3)之無機齒化氣 體之排氣處理方法以及處理裝置，尤其係有關在半導體製 作步驟等中，對於以C1F3乾洗（drycleaning)裝置内面等 時排出之含有 C1F3、SiF4、SiCl4、bf3、bci3、pf3、PCl3、 F2、eh等之無機鹵化氣體之排氣進行無害化處理之方法以 及處理裝置。 【先前技術】 近幾年，隨著超LSI(大型積體電路）之微細化以及生 產效率之提高要求，CVD裝置和PVD裝置等之薄膜形成裝 置之容器和配管之内面附著之薄膜成份採用以三氣化氣 (cif3)等之氣體自動清洗（Aut〇_cleaning)之方法。隨著加 工之晶圓（w a f e r) 口徑變大，c i F 3氣體通氣量增力口，清洗所 用時間有長期化之趨勢，是’ C1F3其TLV值為〇1卿 則毒性極強。且，自動清洗後排出之排氣中，除ciF3以外， 包含清洗薄膜成份時作為副產物同時排出之sij^、SiCl、 BF3 BC13 PF3 PCl3、F2、Cl2等之有害無機_化氣體。 C1F3之處理-般採用由驗水溶液之濕式洗蘇器 (Scrubber)和由驗石灰、活性氧化料之乾式處理方法。 不過，單獨使㈣石灰和活性料之處理财無法將C ^ F a 去除至TLV值以下，且與處理劑反應使 地除去邱、叫、BF3、BCl3、PF3、pci3、F2rci2 = 無機鹵化氣體等問題。 3J5788 51361104 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an exhaust gas treatment method and a processing apparatus containing an inorganic toothed gas containing chlorine trifluoride (C1F3), particularly in a semiconductor fabrication step or the like. A method and a treatment apparatus for detoxifying an exhaust gas containing an inorganic halogenated gas such as C1F3, SiF4, SiCl4, bf3, bci3, pf3, PCl3, F2, eh, etc. discharged from the inner surface of a C1F3 dry cleaning apparatus. [Prior Art] In recent years, with the miniaturization of ultra-LSI (large-scale integrated circuits) and the improvement of production efficiency, the film components of the inner surface of the container and the piping of the film forming apparatus such as the CVD apparatus and the PVD apparatus are used. A method of automatic gas cleaning (Aut〇_cleaning) such as three gasification (cif3). As the processing wafer (w a f e r) has a larger diameter, the c i F 3 gas aeration force increases the time required for cleaning, and the C1F3 has a TLV value of 〇1 Qing, which is extremely toxic. Further, in the exhaust gas discharged after the automatic cleaning, in addition to ciF3, harmful inorganic-chemical gases such as sij^, SiCl, BF3 BC13 PF3 PCl3, F2, and Cl2 which are simultaneously discharged as by-products when cleaning the film component are contained. The treatment of C1F3 is generally carried out by a wet scrubber (Scrubber) and a dry treatment method of lime and active oxidant. However, the treatment of (iv) lime and active materials alone cannot remove C ^ F a below the TLV value, and react with the treating agent to remove the Qiu, BF3, BCl3, PF3, pci3, F2rci2 = inorganic halogenated gas, etc. problem. 3J5788 5
值以:此，本發明者為防止氣之遊離，將C1F3去除至TLV 物盥气ί充分地除去其他無機齒化氣體’建議將鐵之氧化 匆與乳氧化料之_併用之處理方法（日本特公平6_ 盖2公報）ΜΕ是充分地除去多f C1F3,财待進一步改 善的空間。 / x 鱼錯Γ此本案之發明人為充分地除去多量C1F3,又建議 =之减物或合成沸石（zeQlite)接觸後與陰離子交換 p::接觸之處理方法(特開平u，319號公報)。但是，伴 =所需之清洗時間之長期化而由處理劑與排氣之反應熱 、主2上2 ’長時間處理後陰離子交換樹脂之性能降低， t二青除(陳ge)’須將處理劑冷卻。此〜清除 -因為'要…以上之長時間之處理，從清洗步 (_⑷步驟之半導體工程（prQ⑽）之切換遲緩，出現生 產效率落後之問題。又，A名田 吨又冷部用之〜補給線（bargeline) 重新組裝於***装置中。 > [專利文獻1 ] 曰本特公平6-177號公報 [專利文獻2] 曰本特開平1 1-7031 9號公報 【發明内容】 本發明之目的係提供-種在半導體製造步驟等中即使 以三氟化氯清洗所要的時間長、並添加多量之二氟化氯 仍：充含有，含多量酸性氣體之無機：化氣體之 排氣之3有Μ機S化氣體之排氣之處理方法。 315788 6 ίΐ361104 又’本發明之另一目的係提供即使長時間處理後，處 理性能亦不明顯降低，而可充分地處理含有包含三氟化氯 (C1FS)以及其他酸性氣體之無機鹵化氣體之排氣之處理裝 置以及處理劑。 本發明所提供之含有無機函化氣體之排氣之處理方 法，係將含有包含三氟化氯（C1F3)之無機鹵化氣體之排氣 與一氟化氯（CIF3)分解劑接觸，其次，接觸除氣劑。含有 包含二氟化氯（CIF3)之無機_化氣體之排氣與三氟化氣 (CIF3)分解劑接觸，於分解劑中因化學反應將氟原子固定 而除去，其他酸性氣體亦固定於分解劑中。此時，生成遊 離氯氣(Cl2)。其次，將含有遊離氣氣之排氣與除氣劑接 觸，除去遊離氣氣體，使氯原子成為無害鹽，從排氣中除 ▲由本發明處理之排氣中，除含有三氟化氣⑽3)外’ k佳含有四I化梦（siF》、四氣切（sicl4)、三氣化蝴 ⑽3)、三氣化爛（bci3)、三氣化膦（PF3)、三氣化膦（pci )、 氣氣⑻以及氣氣(cl2)中選擇之“重以上酸性氣體。: 半導體製造步驟中之清洗步驟，例如半導體製造 、置中，π洗附著p〇ly_Sl膜和SiN膜等膜 内之步驟等產生之排氣較佳。 C amber) 扣再者，例如，將含有三氟化氣（C1F3)之排氣 ?匕氣分解劑之合成沸石以及作為除氣劑之硫系還原劑^ (NaJA3)接觸之例來說明本發明之處理方法。 、 首先，含有三氟化氯之排氣與合成沸石接觸，如下述 315788 7 1361104 式1所示， [化學式1] 4C1F3 + 2Al2〇3 — 4A1F3 + 2C1 2 + 302 ( 1 ) 氟原子與合成沸石中之ai2o3部分化學反應而固定，氯原 子作為氣氣（Cl2)遊離。 其次’此排氣與除氣劑接觸，如下述式2所示， [化學式2] 2Na2S203 + Cl2 - 2NaCl + Na2S406 (2) 氣原子與硫系還原劑（Na2S203)反應，生成無害鹽（NaCl)， 從排氣中去除。 上述式1以及2中’作為三氟化氯分解劑使用、含有 / Αΐβ3部分之合成沸石以及作為除氣劑使用之硫系還原劑In order to prevent the liberation of the gas, the inventors have removed the C1F3 to the TLV, and the sulphur gas has been sufficiently removed to remove the other inorganic dentate gas. Special fair 6_ cover 2 bulletin) ΜΕ is to fully remove the multi-f C1F3, the space for further improvement. In the case of the inventors of the present invention, in order to sufficiently remove a large amount of C1F3, it is also recommended to treat the contact with the anion exchange p:: after the contact with the reduced or synthetic zeolite (zeQlite) (Japanese Unexamined Patent Publication No. 319). However, with the long-term cleaning time required, the heat of reaction between the treating agent and the exhaust gas, and the performance of the anion exchange resin after 2' long-term treatment on the main 2 are reduced, and t qingqing (Chen Ge) must be The treatment agent is cooled. This ~ clear - because 'to be ... for a long time to deal with, from the cleaning step (_ (4) step of the semiconductor engineering (prQ (10)), the switch is slow, there is a problem of backward production efficiency. In addition, A name Tian Teng and the cold part of the ~ In the case of the present invention, the present invention is incorporated in the present invention. [Patent Document 1] Japanese Patent Application Laid-Open No. Hei 6-177 (Patent Document 2) The purpose is to provide a type of exhaust gas containing a large amount of acid gas, which is contained in a semiconductor manufacturing step, etc., even if it is washed with chlorine trifluoride for a long period of time and is added with a large amount of difluorinated chlorine. There is a method for treating the exhaust gas of the S gas. 315788 6 ΐ 361104 Further, another object of the present invention is to provide a treatment containing a chlorine trifluoride containing chlorine trifluoride even if the treatment performance is not significantly reduced even after a long period of treatment. (C1FS) and a treatment device for treating an exhaust gas of an inorganic halogenated gas of an acid gas, and a treating agent. The method for treating an exhaust gas containing an inorganic functional gas provided by the present invention will contain a fluorine-containing compound. The exhaust gas of the inorganic halogenated gas of chlorine (C1F3) is contacted with a chlorine fluoride (CIF3) decomposing agent, and secondly, the deaerator is contacted. The exhaust gas containing the inorganic gas containing chlorine difluoride (CIF3) and trifluoroethylene The gas (CIF3) decomposing agent is contacted, and the fluorine atom is fixed and removed by a chemical reaction in the decomposing agent, and other acid gases are also fixed in the decomposing agent. At this time, free chlorine gas (Cl2) is formed. Secondly, free gas is contained. The exhaust gas is in contact with the deaerator to remove the free gas, so that the chlorine atom becomes a harmless salt, and the exhaust gas treated by the present invention is removed from the exhaust gas, except for the trifluorocarbon gas (10) 3). Dream (siF), four gas cut (sicl4), three gasification butterfly (10) 3), three gasification rot (bci3), three gasified phosphine (PF3), three gasified phosphine (pci), gas (8) and gas (Cl2) selects "heavily more acid gas." The cleaning step in the semiconductor manufacturing step, such as semiconductor fabrication, centering, π-washing, adhesion to p〇ly_Sl film, SiN film, etc. C amber) For example, the exhaust gas containing trifluorocarbon (C1F3)? The treatment method of the present invention is described by taking the synthetic zeolite of the agent and the sulfur-based reducing agent (NaJA3) as a deaerator. First, the exhaust gas containing chlorine trifluoride is contacted with the synthetic zeolite, as described below, 315788 7 1361104 As shown in Formula 1, [Chemical Formula 1] 4C1F3 + 2Al2〇3 - 4A1F3 + 2C1 2 + 302 (1) The fluorine atom is chemically fixed with ai2o3 in the synthetic zeolite, and the chlorine atom is released as gas (Cl2). The exhaust gas is contacted with the deaerator, as shown in the following formula 2, [Chemical Formula 2] 2Na2S203 + Cl2 - 2NaCl + Na2S406 (2) The gas atom reacts with the sulfur-based reducing agent (Na2S203) to form a harmless salt (NaCl), from Removed from the exhaust. In the above formulas 1 and 2, as a chlorine trifluoride decomposing agent, a synthetic zeolite containing / Αΐβ3 moiety, and a sulfur-based reducing agent used as a deaerator
之Ν&β2〇3，可使用於本發明之三氟化氣分解劑以及除氣劑 並不侷限於該等。可使用於本發明之三氟化氣分解劑，只 要能分解三氟化氣、固定氟原子者即可，例如，可使用以 Fees為主成分之3價之鐵氧化物等。不過，合成沸石比鐵 氧化物對於三氟化氣之分解處理量多，分解能力高，以及 可防止由激烈的分解反應、溫度和壓力之急速上升所引起 之處理劑層内之凝縮以及液化狀態之蓄積而尤佳。 忭馬本發明 旦士 ，_糾"-和乂用之兮攻沸石其鋁令 ::者為=例如’對於〗莫耳份之叫3含有〇.5至1〇 之1 2’較佳為對於1莫耳份之職有！至5 莫耳伤之Sl〇2，更佳為對於〗料份之a㈣含有 耳份之Sl02。此種合成滞石較佳為對於三氣化氯之分解能 3J5788 8 力高之X型合成沸石。具 滞石為Na2〇· Al2〇 2〜3 5，可使用於本發明之合成 甘β丄 3Sl〇2 · ηΗ20之X型人， 其具有—12〇3.2.叫 广“石’尤 石較佳。上述式中，氧化 2子式之X型合成沸 氣化物，或為氧化料之驗；料外之驗金屬 亦可為L卜X型、κ-χ型、M金屬乳化物所取代者，例如， 沸石。 g X型、Ca—X型、Ba-X型合成 乍為使用於本發明之三氟化 ^ ^ ^ ^ ^ 平均孔徑較㈣…2ΛΙ其 積較佳為咖至叫更佳為_至為 m g #佳為㈣ffl2/g。合成沸石之平均 :面積在上述範圍日夺，顯示更高之活性，具有對於三= 氣之分解能力高之優點。 可使用於本發明之除氣劑，能使遊離氯還原生成 無害鹽者即可，例如，陰離子交換樹脂等。但是，硫系還 f劑’其氣處理量多’較陰離子交換樹脂具有耐熱性，在 高溫狀態下之處理能力高而尤佳。 使用於本發明之作為除氯劑之硫系還原劑可列舉較佳 如亞硫酸鹽、連二硫酸（dithi〇nic acid)鹽、連四硫酸 (tetrathionic acid)鹽、硫代硫酸鹽等，該等可單獨使用 或2種以上混合使用。例如，可使用亞硫酸與硫代硫酸鹽 之組合4。尤其，可使用亞硫酸納、亞硫酸卸、硫代硫酸 鈉、硫代硫酸鉀等。 使用於本發明之三氟化氣分解劑以及除氣劑之形狀只 9 315788 1361104 要操作性以及處理性能良好就可，益不特別限制，可為粒 •狀/棒狀、板狀等之任何一種形態。 _ 使用於本發明之三氟化氯分解劑以及除氣劑，與三氟 ,化氯有放地進行化學反應，為能可有效地固定氟原子以及 •氣原子，故與排氣中之鹵原子之接觸面積大者更佳。又， 通過排氣時通氣阻力不上升之範圍為宜。滿足該等條件之 三氟化氣分解劑之合成沸石較佳為4至2〇mesh之範圍之球 癱狀或圓柱狀’更佳為8至2〇mesh之範圍之球狀或圓柱狀， 再佳為14至20meSh之範圍之球狀或圓柱狀。又，作為除 氣劑之硫系還原劑較佳為！ 6至3 2mm0範圍之圓柱，更 /佳為1.6至2.4随0範圍之圓柱，尤佳為16咖必範圍之 /圓柱狀球顆粒物（pellet)。 本發明之處理方法中，氣體處理時之溫度通常在常溫 至150°C之範圍，更佳為常溫至2〇〇<t之範圍，尤佳為常 溫。氣體處理溫度若超過2〇〇ΐ之高溫，處理裝置之材質 籲和構造須有耐熱性，因此經濟上不划算。又，若為低於常 溫之低溫，需使用冷卻器等之冷卻裝置降低溫度，處 本變高而不宜。 • X ’未發明係提供由三氣化氣分解劑以及除氣劑之組 •合而成之含有包含三I化氣之無機鹵化氣體之排氣之處理 劑。在此’ 2氟化氣分解劑與除氣劑在排氣處理時可分 使用而以不混合使用為宜。 、本發明之處理劑中’三氟化氣分解劑較佳為上述之合 成彿石，更佳為X型合成沸石。又，除氣劑㈣為上述之 315788 10 1361104 硫系還原劑。 本發明之處理劑中，雖然三氟化氯分解劑金 使用量之比例隨著三氟化氣之處理量變;、氟二 解劑與除氣劑之使用量之比例較—鼠化乳刀 圍。 m佳在1 · 1至1 ·· 0.6之範 '體二發Γ提供一種含有包含三氟化氣之編化 乱體之排亂之處理裝置’該裝置之構成係包 =分解劑而成之第1處理部，以及填充除氣劑而成^ :二排且/Γ1/理部配置在該第2處理部之上游。本： 部，盆Γ理义置中’最好以將排氣最先通過第1處理 …人再通過第2處理部之方式配置第！處理部與第2 時例如’第2處理部配置在上段而第2處理部配置 又s* ’可將排氣流作為下降流流動而構成。反之，第 置在下段而第2處理部配置在上段時，使排氣 動而構成。再者，第1處理部與第2處理 二為並列配置時’可使排氣通過第1處理部後再通過第2 處理部而構成。 本發明之處理裝置中，第】處理部與第2處理部之間， =好再設有絕熱部。作為絕熱材可使用多孔質之不活性成 :刀，例如，石夕膠、天然沸石、氧化紹等。藉由設置此絕献 二’即使在排氣之流人濃度增加，通氣時間長期化，第1 2: 里。p中與二氟化氣分解劑之反應而溫度急速上升接近 〇C之高溫時，亦可防止第2處理部之除氯劑之熱降解。 又’本發明係提供-種含有包含三氟化氯之無機齒化 Π 315788 1361104 氣體之排氣之處理裝置，嗲 -口以及處理氣體出口之：：之構成係為具有排氣處理 處理入口侧之填充三氟化氯而柱内設有於排氣 理氣體出口側之填充除氣 二理部，以及於處 第1處理邱盥坌9老 成之第2處理部，且設有於 本發明中、，第？：部之間填充絕熱材而成之絕熱部。 著三氣化氣之處理量變動，血型—二化之填充量隨 = 2處理部之除氣劑之填充量典型 '、、合1 〇至45谷置％，更佳為35容量％左右。三氟化 氯分解劑以及除氯劑之填充 一 :三氣化氣以外共存之無機齒化氣〜可對於除了 .點。 G轧體，具有向處理性能之優 【實施方式】 方二ί 1ΐ:說明本發明之排氣處理裝置以及排_ 法彳-本發明局並不限於此。 第1圖係本發明之排氣處理裝置之第〗每 意圖。此實施形態中使用2根填充柱 :& v心不 兄狂各填充柱之内部分 個填充層。亦即圖所示之排氣處理裝置： 望構成係包含：填充三氣化氣分解劑而成之第U理部之 弟1柱10,填充除氯劑而成之第2處理部之第2柱2〇，且 該第1處理部之第"主10配置在第2處理部之第2柱2〇 =游^柱1G設有從排氣發生源通過k使排氣流入 之排氣k入口 12,填充三氟化氣分解劑而成之三 解劑層14,使通過三氟化氣分解劑層14之一次處理後之刀 315788 12 1361104 氣體流出之一次處理氣體流出口 16。第2柱之2〇設有從 第1柱10之一次處理氣體流出口丨6接收一次處理氣體之 一次處理氣體流入口 22’填充除氣劑而成之除氯劑層24， 使通過除氣劑層24之二次處理後之氣體流出之二次處理 氣體流出口 26。第丨柱“之一次處理氣體流出口 16與第 2柱20之一次處理氣體流出口 26之間，設有一次處理氣 體線L，將第1柱10上氟原子經吸附除去之一次處理氣體 導入到第2柱20。 從排氣發生源之排氣，係從排氣流出口 12通過導 入於第1柱1G内’作為上升流通過三氟化氣分解劑層^ 4。 通過三氟化氯分解劑層14時’排氣中之氟原子固定於三氟 化氣分解劑層14從排氣中除去，形成除去氟原子之一次處 理氣體m化氯分解劑層14之—:欠處職體從一次 處理氣體流出口 16流入一次處理氣體線L，通過第2柱別 之一次處理氣體流人口 22，導人於第2柱20内。第2柱 20内’-次處理氣體作為上升流通過除氣劑層2心1間氯 =子f除氯劑而除去，形成除去氯原子之二次處理氣 扭八—人’―次處理氣體，流入二次處理氣體流入口 26 再通過L0l)T向外部排出。 第2圖:系本發明之處理裝置之第2實施形態之示意 圖二第2圖中’一個填充柱之内部配置2個填充層。亦即， 2圖之排氣處理裝置1〇〇係具有排氣處理入口以及 氟化氯分解劑而成之。入口側設有填充三 成之弟1處理部11〇，處理出口側設有填 315788 )3 1361104 四氣化矽（SiCM、三氟化硼（抓3)、三氯化硼（BC13)、三氟 化膦（ΡΙ?3)、三氣化膦（PC13)、氟氣（F2)、氣氣（ci2)中選^ 之1種以上之酸性氣體之排氣處理上，可得十分理想之成 理效果β ' 士八又，本發明係提供處理容量大，含有包含具有長期化 可叩之二氟化氯之無機自化氣體之排氣之處理劑。 再者，本發明係提供無機處化氣體之處理裝置，該裝Further, the trifluorocarbon gas decomposing agent and the deaerator used in the present invention are not limited to these. The trifluorocarbon gas decomposing agent to be used in the present invention may be any one which can decompose the trifluorochemical gas and fix the fluorine atom. For example, a trivalent iron oxide containing Fees as a main component can be used. However, the synthetic zeolite has a higher decomposition amount than the iron oxide for the trifluorocarbon gas, has a high decomposition ability, and can prevent condensation and liquefaction in the treatment layer caused by intense decomposition reaction, rapid rise in temperature and pressure. It is especially good for accumulation.忭马 The invention of the invention, _ 纠 quot - - - - - - - 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 其 沸石 沸石 沸石For the job of 1 mole! Sl〇2 of 5 moles of injury, more preferably for the a(4) of the ingredient, the earphone of the ear. The synthetic talc is preferably an X-type synthetic zeolite having a high decomposition energy of 3J5788 8 for the three-gasified chlorine. The stagnation stone is Na2〇·Al2〇2~3 5, and can be used in the X-type human of the synthetic glucoside β丄3Sl〇2·ηΗ20 of the present invention, which has -12〇3.2. In the above formula, the X-type synthetic boiling gas compound of the oxidation type 2 is used, or the test for the oxidized material; the metal other than the test metal may be replaced by the L-X type, the κ-χ type, and the M metal emulsion. For example, zeolite. g X type, Ca-X type, Ba-X type synthetic hydrazine is used in the present invention. The trifluorochemical ^ ^ ^ ^ ^ average pore diameter is more than (4)... 2 ΛΙ its product is preferably better than coffee. _至为mg#佳为(四)ffl2/g. The average of synthetic zeolite: the area is in the above range, showing higher activity, and has the advantage of high decomposition ability for the three gas. The deaerator used in the present invention can be used. The free chlorine can be reduced to form a harmless salt, for example, an anion exchange resin, etc. However, the sulfur-based agent f has a higher gas handling capacity than the anion exchange resin, and has high heat treatment capacity at a high temperature. More preferably, the sulfur-based reducing agent used as the chlorine removing agent in the present invention may preferably be sulfite or the like. Dithi〇nic acid salt, tetrathionic acid salt, thiosulfate salt, etc., may be used singly or in combination of two or more. For example, a combination of sulfurous acid and thiosulfate may be used. In particular, sodium sulfite, sulfurous acid sulphate, sodium thiosulfate, potassium thiosulfate, etc. can be used. The shape of the trifluorocarbon gas decomposing agent and the deaerator used in the present invention is only 9 315788 1361104. The performance is good, and the weight is not particularly limited, and may be any one of a pellet shape, a rod shape, a plate shape, etc. _ a chlorine trifluoride decomposing agent and a deaerator used in the present invention, and a trifluorocarbon, a chlorine compound. There is a chemical reaction in the ground, so that the fluorine atom and the gas atom can be effectively fixed, so that the contact area with the halogen atom in the exhaust gas is larger, and the range in which the ventilation resistance does not rise when exhausting is suitable. The synthetic zeolite which satisfies the conditions of the trifluorocarbon gas decomposing agent is preferably spherical or cylindrical in the range of 4 to 2 〇mesh, more preferably in the range of 8 to 2 〇mesh. Better spherical or round in the range of 14 to 20 meSh Further, the sulfur-based reducing agent as the deaerator is preferably a cylinder of the range of 6 to 3 2 mm0, more preferably a cylinder of 1.6 to 2.4 with a range of 0, and particularly preferably a sphere of 16 ca. In the treatment method of the present invention, the temperature at the time of gas treatment is usually in the range of from room temperature to 150 ° C, more preferably from room temperature to 2 〇〇 < t, and particularly preferably room temperature. If the temperature is higher than 2 ,, the material of the treatment device must have heat resistance, so it is not economical. Moreover, if it is lower than normal temperature, it is necessary to use a cooling device such as a cooler to lower the temperature. It is not suitable to become taller. • X ′ is not invented by providing a treatment agent comprising an exhaust gas containing an inorganic halogenated gas of a triple I gas, which is a combination of a three gasification gas decomposing agent and a degassing agent. Here, the '2 fluorinated gas decomposing agent and the deaerator are preferably used in the exhaust gas treatment without being mixed. In the treatment agent of the present invention, the "trifluorocarbon gas decomposing agent is preferably the above-mentioned synthetic fossil, more preferably X-type synthetic zeolite. Further, the deaerator (4) is the above-mentioned 315788 10 1361104 sulfur-based reducing agent. In the treatment agent of the present invention, although the ratio of the amount of gold trifluoride decomposing agent used varies with the amount of treatment of the trifluoride gas; the ratio of the amount of the fluorine dissolving agent to the amount of the deaerator is greater than that of the mouse. . m is preferably in the range of 1 · 1 to 1 · · 0.6, and provides a treatment device containing the disorder of the braided body containing the trifluorocarbon gas. The first processing unit and the degassing agent are filled in the second row and the /1/1 portion is disposed upstream of the second processing portion. This: The Ministry, the basin is the best in the middle of the 'the best way to pass the first treatment through the first treatment ... people through the second processing unit to configure the first! The processing unit and the second time, for example, the second processing unit is disposed in the upper stage and the second processing unit is disposed in the second processing unit, and the exhaust gas flow can be configured to flow as the downward flow. On the other hand, when the second processing unit is placed in the lower stage and the second processing unit is placed in the upper stage, the exhaust is configured. When the first processing unit and the second processing unit are arranged in parallel, the exhaust gas can be passed through the first processing unit and then passed through the second processing unit. In the processing apparatus of the present invention, between the processing unit and the second processing unit, a heat insulating portion is further provided. As the heat insulating material, a porous inactive material can be used: a knife, for example, Shiqi gum, natural zeolite, oxidized or the like. By setting this dedication II, even if the concentration of people in the exhaust stream increases, the ventilation time is prolonged, in the first 2:2. When the temperature of p in the reaction with the difluorinated gas decomposing agent is rapidly increased to a temperature close to 〇C, the thermal degradation of the chlorine removal agent in the second treatment portion can be prevented. Further, the present invention provides a treatment apparatus for an exhaust gas containing an inorganic toothed ruthenium 315788 1361104 gas containing chlorine trifluoride, a port of the sputum port and a process gas outlet: the exhaust gas treatment treatment inlet side Filled with chlorine trifluoride, the column is provided with a degassing and unblocking portion on the exhaust gas outlet side, and a second processing portion for processing the first process in the column, and is provided in the present invention. ,, the first? : The insulation between the parts is filled with insulation. The amount of treatment of the three gasification gas varies, and the filling amount of the blood type-dimerization is typically '%, ～1 〇 to 45 谷%, and more preferably about 35 vol%. Filling of trifluorinated chlorine decomposing agent and dechlorinating agent 1: Inorganic dentate gas coexisting other than three gasification gas can be used. The G-rolled body has excellent processing performance. [Embodiment] The present invention is not limited to the description of the exhaust gas treatment device and the ventilator of the present invention. Fig. 1 is a schematic view of the exhaust gas treatment device of the present invention. In this embodiment, two packed columns are used: & v heart is not filled with a portion of the filling layer inside the column. In other words, the exhaust gas treatment device shown in the figure includes a second column of the first processing unit in which the first processing unit is filled with a chlorine removal agent, and the second processing unit is filled with a three gasification gas decomposing agent. The second column 2 of the second processing unit is disposed in the second column 2 of the second processing unit, and the column 1G is provided with an exhaust gas k through which the exhaust gas flows from the exhaust gas generating source. The inlet 12 is filled with a tri-decomposing agent layer 14 of a trifluorocarbon decomposing agent, and the primary processing gas outflow port 16 through which the gas of the 315788 12 1361104 gas once passed through the primary treatment of the trifluorocarbon decomposing agent layer 14 flows out. The second column of the second column is provided with a dechlorination agent layer 24 which is filled with a deaerator from the primary processing gas inflow port 22' of the primary processing gas outlet port 6 of the first column 10, and is degassed. The secondary treated gas stream exits the gas after the secondary treatment of the agent layer 24. The first processing gas line L is provided between the primary processing gas outflow port 16 of the second column 20 and the primary processing gas outflow port 26 of the second column 20, and the primary processing gas for adsorbing and removing fluorine atoms on the first column 10 is introduced. The second column 20. The exhaust gas from the exhaust gas generation source is introduced into the first column 1G from the exhaust gas outlet 12, and passes through the trifluorochemical gas decomposer layer 4 as an upward flow. In the decomposing agent layer 14, the fluorine atom in the exhaust gas is fixed to the trifluorocarbon decomposing agent layer 14 and is removed from the exhaust gas to form a primary treatment gas m-chlorinated decomposing agent layer 14 for removing fluorine atoms. The primary process gas line L flows from the primary process gas outlet 16 and passes through the second column to process the gas flow population 22, and is introduced into the second column 20. The second column 20 passes the process gas as an upward flow. The deaerator layer 2 is separated by chlorine = sub-f chlorine removal agent to form a secondary treatment gas to remove the chlorine atom, and the secondary treatment gas is introduced into the secondary treatment gas inlet 26 and then passed through L0l)T. Discharged to the outside. Fig. 2 is a second embodiment of the processing apparatus of the present invention In the second drawing of Fig. 2, two packed layers are disposed inside the one packed column. That is, the exhaust gas treatment device 1 of Fig. 2 has an exhaust gas treatment inlet and a fluorinated chlorine decomposing agent. There is a filling chamber of the younger brother 1 processing section 11〇, and the processing outlet side is provided with 315788) 3 1361104 four gasification hydrazine (SiCM, boron trifluoride (grab 3), boron trichloride (BC13), phosphine trifluoride ( ΡΙ? 3), three gasified phosphine (PC13), fluorine gas (F2), gas (ci2) selected from one or more kinds of acid gas exhaust treatment, can obtain a very ideal rational effect β ' In addition, the present invention provides a treatment agent having a large processing capacity and containing an exhaust gas containing an inorganic self-chemical gas having a long-term fluorinated chlorine difluoride. Further, the present invention provides a treatment device for an inorganic chemical gas. , the dress
，即使長時間處理後，其處理性能不怎麼降低，可十分理 想地處理含有包含三氟化氣之無機函化氣體之排氣。 【圖式簡單說明】 置之第1實施形態之概 第1圖係顯示本發明之處理裝 略示意圖。 略示意圖 圖係顯示本發明之處理裝置之第2 他艰恶之概 【主要元件符號說明】Even if the treatment performance is not lowered after a long period of treatment, the exhaust gas containing the inorganic functional gas containing the trifluorocarbon gas can be treated with great desirability. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a process of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS The figure shows the second most difficult aspect of the processing apparatus of the present invention.
10 14 20 24 第1處理部 三氟化氣分解劑層 第2處理部 除氯劑層 、100處理裝置 2 排氣流入口 6 一次處理氣體流出口 9 一次處理氣體流入口 5 二次處理氣體流出口 第1處理部（三氟化氣分解劑層） 120苐2處理部（除氣劑層） 130 絕熱部（絕熱材層） 31578810 14 20 24 First treatment unit, trifluorocarbon gas decomposer layer, second treatment unit, dechlorination agent layer, 100 treatment unit 2, exhaust gas inlet, primary treatment gas outlet, primary treatment gas inlet, secondary treatment gas flow Exit first treatment unit (trifluorocarbon gas decomposer layer) 120苐2 treatment unit (degreasing agent layer) 130 Insulation part (heat insulation layer) 315788