l356l〇〇 Λ·::..，.，---· ♦ ~ . Γ *.·* * · -- _._··· ·*.· :* - .··* 4ρψ m τ t·— · ’ 發明所屬之技術領域】 本發明之實施例大體來說係有關 理室。 【先前技術】 許多半導體製程通常是在真空環 物理氣相沈積（PVD) 一般是在一密封處 處理室具有用來支撐配置在其上之基板 般包含基板支撐，基板支撐具有電極配 程期間靜電撐持在該基板支撐上之基板 該基板上之材料所組成之靶材係支樓在 是固定在該處理室頂部。由氣體（例如』 被供應至該基板和該靶材之間。該靶材 致該電漿中之離子朝向靶材加速。離子 料從該靶材移出。移出之材料被吸引朝 沈積出一材料膜。 一般來說，在 PVD處理室中4 (conditioning operation)以確保製程效截 稱為熱乾（burning-in the target)。熱乾 其他污染物從靶材表面去除，並且通常 露在環境中或閒置一段時間後執行。在 效用晶圓（utility wafer)或遮盤配置在該 止乾材材料沈積在該支撐上。該熱靶製 理室中形成電漿，以及使用該電漿自該染 於物理氣相沈積處 境下執行。例如， 理室中執行，密封 之臺座。該臺座一 置在其内，以在製 。通常由欲沈積在 該基板上方，一般 I氣）所形成之電漿 係經施以偏壓，導 衝擊該靶材，使材 向基板，並在其上 行兩種調節操作 ^。第一種調節製程 一般會將氧化物及 是在處理室已經暴 熱靶製程期間，將 基板支撐上，以防 程通常包含在該處 L材去除材料表層。 3 1356100 第二輕調節製程稱為塗覆（pasting)。塗覆一般係在 習知PVD製程期間，施加—覆蓋層在處理室構件上沈積之 材料的上方》例如’氮化欽·之PVD應用通常會導致一層氮 化鈦形成在該PVD處理室表面上。該氮化鈦層通常是易碎 的，並且可能會在其後製程期間剝落。塗覆一般係在該氮 化欽層上施加一層鈦。該鈦層大幅地避免下方之氮化鈦剝 落或脫離。大體來說，處理室係以預定間隔時間進行塗覆， 例如每利用習知氮化鈦PVD製程處理25個基板後。如熱 靶一般，一遮盤係經配置在該基板支撐上，以避免靶材材 料在塗覆製程期間沈積在其上。 此外’在依序原位施加欽及氮化鈦之PVD製程中， 在每一次欽沈積前皆需清潔該靶材，以去除來自沈積在先 前基板上之氮化鈦之可能存在該靶材上之氮化物。一般來 說’乾材清潔係與熱靶製程類似，具有幾秒的持續時間， 並且包含以遮盤保護該基板支撐。 在每一次熱靶、塗覆和清潔製程完成後，該遮盤被 一配置在該PVD處理室中之機械手臂旋轉至遮盤不會干 擾處理室中之沈積製程之無障礙位置。為了將遮盤置中， 在與該機械手臂連結之軸上運用感應器來偵測該手臂之旋 轉位置》 债測該遮盤在無障礙位置上之位置之其配置的問題 在於感應器無法確定遮盤對於機械手臂之相對位置。例 如，遮盤和機械手臂間之差排（misa〗ignment)可能使遮盤的 —部份留在陶瓷基板支撐之路徑上。當陶究支樓上升至製 1356100 盤114在製程期間不是位於基板支撐104或座落在其上之 基板112接觸的位置上。製程處理室100之一實例是可適 用且從本發明受益之IMP VECTRA™ PVD製程處理室，可 從加州聖可拉拉之應用材料公司取得。 例示之製程處理室100包含一處理室主體1〇2及界 定出可排空之製程體積160之蓋子組件106。該處理室主 體102通常是從單一鋁塊或焊接之不鏽鋼盤製作出。該處 理室主體102 —般包含側壁152和底部154。該側壁通常 含有複數個孔隙，包含凹槽埠、抽吸埠和遮盤埠156(凹槽 和抽吸埠未示出）。可密封之凹槽埠提供基板112在該製程 處理室100之入口及出口。該抽吸槔係與一抽吸系統（未示 出）連結，其排空並控制該製程體積160内之壓力。該遮盤 埠156係經配置在該遮盤114位於該無障礙位置上時，容 許遮盤114之至少一部分從其間穿過。一外罩116通常覆 蓋住該遮盤埠156，以維持該製程體積16〇内真空之完整 性。 該主體102之蓋子組件106通常支撐一從其懸吊出 之環狀播板162’其支樓一遮蔽環（shadowringUSS»該遮 蔽環158 —般係經配置來將沈積限制在基板112透過該遮 蔽環158中心暴露出之部分上。 該蓋子組件106通常包含一範材164和一磁電管 166。該靶材164提供PVD製程期間欲沈積在基板ιΐ2上 之材料，而該磁電管166提高於製程期間靶材材料之均勻 消耗。靶材164和基板支撐104藉由一電源U4相對於彼 !3561〇〇 此被偏壓。例如氬氣之氣·體從一氣體來源1 82供應至該製 程體積160。電漿由該基板1丨2和該乾材164間從該氣體 形成。電漿_内之離子被朝向該靶材164加速並導致材料從 該靶材164—移出。移出之靶材之材料被吸引朝向基板112, 並在其上沈積出一材料膜。+ 該基板支撐104通常係配置在該處理室主體1〇2之 底部154上，並在製程期間支撐該基板112。該基板支撑 104利用一舉升機構（未示出）連結至該底部154，該舉升機 構係經配置以將該基板支撐在一較低位置（如所示）和—較 高位置間移動。該基板支撐104被移至該較高位置以進行 製程。在較高位置上，該基板112係經配置在該基板支擇 104上’並且與該遮蔽環158响合，將該遮蔽環158從該· 擋板162提升。 在較低位置上’該基板支撐104被置於該擋板ι62 下方，以使該基板112可以在清潔該環158和檔板162時 通過侧壁152内之埠從該處理室1〇〇移出。頂升栓（未示出） 係經選擇性地移動通過該基板支撐104,以隔開該基板112 和該基板支撐1 04 ’以利用配置在該製程處理室丨〇〇外部 之晶圓傳送機構’例如單一葉片機械裝置（未示出）來促進 該基板之穩固。一摺箱186通常配置在該基板支撐1〇4和 該處理室底部1 5 4間’並提供其間之彈性密封，因此可維 持該處理室體積160之真空完整性。 該基板支樓104通常係由鋁、不鏽鋼、陶瓷或其級 合物製成。可適應而從本發明受益之一種基板支樓1〇4在 8 1356100 1996年 4月 16曰核准予 Davenport等之美國 5，:5 0 7，4 9 9號中描述，其在此藉由引用全文的方式併 中 〇 、一遮盤機構 108通常係配置在鄰近基板支 處。該遮盤機構108 —般包含支撐該遮盤114之凳 以及藉由軸120與該葉片118連結之促動器126。 密封墊1 22係經配置通過該處理室底部1 5 4，以使詔 可以旋轉而不會讓真空從該處理室體積160中洩露 該促動器126 —般控制該葉片之角度定位。 該葉片118係在第1圖所示之無障礙位置和基本上 盤114置於與該基板支撐 104同中心處之第二位 動。在該第二位置上，可以在熱靶和處理室塗覆製毛 將該遮盤114傳送（利用該等頂升栓）至該基板支撐 常，在熱靶和處理室塗覆製程期間，該葉片118係 無障礙位置。 該促動器126可以是適於將該軸120以可將 118在無障礙位置和第二位置間移動之角度旋轉之 置。該促動器126可以是電子、液壓、或空氣馬達 或液壓汽缸，或螺線管，除了其他移動裝置外。該 126可包含一轴感應器124,其偵測該軸120何時旋 第二位置。該軸感應器124可以直接連結至該促動； 例如以一旋轉編碼器或限制開關，或者可以與該軸 合，例如以一限制開關。也可以使用其他適於偵測該 之角度位置之感應器124。 專利第 入本文 撐 104 片118 一旋轉 :軸 1 20 出。 通常， 使該遮 置間移 L期間， 1 0 4。通 回到該 該葉片 任何裝 ，氣動 促動器 轉至該 摄 126， 120接 軸120 9 1356100 該葉片118 —般在水平方向上支撐該遮盤114。該 葉片118通常具有一平坦主體142，其包含一與該軸120 ，連結之轂（hub) 128，以及至少三個從其延伸出之遮盤支撐 -栓130。該等支撐栓130 —般以與該葉片118隔離開之方 式支撐該遮盤114。該葉片118係經配置以使該葉片118 可以從該第二位置旋轉至無障礙位置而不接觸到從該葉片 118延伸出之該等頂升栓。該葉片118另外包含一凸出部 220(在第2A圖中示出），其延伸超出該遮盤114邊緣。 當位於無障礙位置時，該遮盤1 1 4之一部分係經配 置在該外罩116中》該外罩116 —般是.由與該處理室主體 1 02相同之材料製成。該外罩1 1 6係密封地連結至該處理 室主體102，並且在一實施例中，係在該外罩116和主體 1 02間介面處連續焊接，以確保接縫之真空密封。 該外罩116 —般係包含至少一個第一窗口 134，該 第一窗口密封地配置穿過該外罩Π6。該第一窗口 134係 經安置以使該感應器組件1 1 〇可以偵測該外罩1 1 6内之該 遮盤114及/或該葉片118的存在。在第1圖所示之實施 例中，該外罩116另外包含形成在該外罩116之底部區域 140内之第二窗口 136,其係相對於形成在該外罩116之頂 部區域138内之第一窗口 134。該等窗口 134、136係由對 於該感應器組件11 〇之偵測機構來說基本上是透明或非侵 略性之材料製成，例如，石英。 該感應器組件1 1 〇通常配置在該外罩π 6附近。該 感應器組件1 1 〇 —般包含至少一個適於偵測該外罩Π 6内 10 1356100 之葉片118及7或該遮盤Π4之存在的感應器，當位於無 障礙位置時較佳。 該感應器組件1 1 0係經連結至一控制器丨9 〇，其與 該製程系統100接合並且通常係控制該製程系統1〇〇。-該 控制器190 —般包含一中央處理器（cpu)194、支援電路ι96 和記憶鱧192。該CPU 194可以是可用在工業設定中以控 制各種處理室和子處理器之電腦處理器之任何形式之一。 該記憶體1 92係經連結至該CPU 1 94。該記憶體192，或 電腦可讀式媒介，可以是一種或多種容易取得之記憶體， 例如隨機存取記憶體（RAM)、唯讀記憶體（ROM)、軟碟、 硬碟、或任何其他形式之數位儲存，近端或遠端的。該支 援電路1 96係經連結至該CPU 1 94並利用習知方式以支援 該處理器。這些電路包含快取、電源供應器、時脈電路、 輸入/輸出電路、子系統、以及諸如此類者。該等感應器， 至少包含該感應器組件110和該軸感應器124之一，提供 關於該遮盤114及/或該葉片Π8之位置之相關資訊給予 該控制器190。 第2 A - B圖描繪出該外罩1 1 6之上視及剖面平面 圖，示出該感應器組件對於該遮盤114、該葉片118以及 該基板支撐104之相對位置冬一實施例。鼓勵讀者同時參 考2A-2B兩者。 在第2A-B圖所示之實施例中，該感應器組件包含 一第一感應器202、一第二感應器204以及一第三感應器 2 06。該等感應器2〇2、2 04和206各自透過把架208、210 1356100 和212與該外罩116之頂部134連結。該等 2 04和206 —般提供表示在其下之遮盤114石 存在之訊號。 該第一和第二感應器202、2 04 —般係 板支撐1 04中心點2 1 4和參考點2 1 6間界定丨 該參考點216通常係位於該遮盤114中心處 在無障礙位置上時（如所示）。在一實施例中 考點214、216與該軸120之中心轴218也是 感應器202、204沿著該線224之位置使該等 供該遮盤114不會觸及該基板支撐104之確 線224位於沿著該遮盤114(當正確安置在該 和該基板支撐104間之最短距離上時》 該第一感應器202 —般係偵測位於無 遮盤1 1 4位置。該第二感應器一般係偵測該 該遮盤被錯置在該葉片上但仍然被該第一感 到時，如由虛線遮盤222所示者。例如，該 被安置在該葉片118上非正中的位置上，且 置放地更加進入到該外罩1 1 6内。雖然該遮 中位置仍然可讓該基板支撐垂直移動，而不 盤2 22，但該遮盤222會與該基板支撐104 轉至第二位置進行塗覆或熱靶時，這會使材 在該基板支撐104上。因此，該第二感應器 1 1 4之差排給該控制器1 90，其發出訊號給作 時機停止生產程序以進行調整。 :感應器202、 ί /或葉片118 安置於在該基 ϋ之線224上。 ，當該遮盤1 14 ，該中心和參 .等距的。該等 感應器可以提 實表示，當該 葉片1 18上時） 障礙位置時之 遮盤222 ，當 應器202偵測 遮盤222可能 將該遮盤222 盤222之非正 會接觸到該遮 有差排，當旋 料不利地沈積 2 04指出遮盤 業員或在適當 12 1356100 該第三感應器206通常係經安置以查看該.葉片 之一部分或其凸出部220，以指出該葉片118係位於無障 礙位置上。該葉片118之凸出部220可被該遮盤114覆蓋 或延伸出該遮盤114，以在該遮盤114也在該無障礙位置 上時可偵測到該葉片1 1 8。或者，該第三感應器206可經 安置以透過該第一窗口 134或其他配置在該外罩116中之 窗口查看該基板。 第3圖描繪出沿著第2A圖之切線3 — 3所得之該等 感應器202、204之一實施例之剖面圖。該等感應器2〇2、 2 04 —般係包含一發射器3 02和一接收器304。該發射器 302產生一訊號，例如光束306，其穿過該等窗口 134、136 並照射在該接收器304上。當該遮盤114阻斷或阻礙該光 束3 06時’該等感應器202、204會改變狀態以指出該遮盤 114之存在。可用來偵測該遮盤114之感應器202、204實 例可從位於明尼蘇達州明尼亞波里市之Banner工程公司 (Banner Engineering Corporation)獲得。也可以使用其他類 型之感應器，包含反射式感應器（即，發射器和接收器配置 在單一單元體中之裝置）》該第三感應器206係經同樣地配 置以偵測該葉片11 8之存在。 第4圊描繪.出具有用來選擇性保護一基板支撐404 之遮盤機構408之另一個實施例之例示製程系統400之部 分切割圖。該製程系統400大體而言係與上述之製程系統 100類似，並且包含一與外罩416連結之處理室主體402 ’ 該外罩提供一遮盤414(在第4圖中以虛線示出）之儲存位 1356100 置，當如所示般移動至不接觸到該基板支撐4 04時。 該遮盤機構40 8通常係配置在該基板支撐 404'附 近，並且包含支撐該遮盤414之葉片41.8。該葉片418能 夠繞軸420旋轉，在介於使遮盤414至少部分配置在該外 罩416内（如第4圖所示者）之第一無障礙位置和如上所述 般（以及如第6圖所示般）促進該遮盤414傳送至該基板支 撐4 04之第二位置間。 該葉片418通常是由適於用在真空製程環境（例如 物理氣相沈積處理室）中之堅固材料製成。在一實施例中， 該葉片418係由鈦製成。在另一個實施例中’該葉片418 和遮盤414係由基本上具有相似或相同熱膨脹係數之材料 製成，以最小化介於其間之移動。 在一實施例中，該葉片418具有包含—敍428、一 支撐墊49Q和一邊緣槽492之主體442 »該轂428係經連 結至該軸420以促進該葉片418旋轉。該葉片418之主體 4 4 2係經配置以使該葉片4 1 8可以從第二位置旋轉至無障 礙位置，而不接觸從該基板支撐404延伸出之頂升栓406。 該葉片418之主體442可額外包含一凸出部482， 該凸出部482延伸出該遮盤414之邊緣。該葉片418之設 計係為使該凸*部482可以當該葉片418縮回該外罩416 内之時置於適當位置，以改變感應器組件410之輸出狀 態。該感應器組件410可以配置為與第1圖所示之感應器 組件1 1 0相似。該感應器組件4 1 0也可以配置為與該葉片 418和遮盤414交界，和上述之感應器組件丨10、葉片118 14 1356100 和遮盤1 1 4相似。 此外參見第5圖之葉片418和遮盤414之剖面圖； 該葉片418之支撐墊490係配置在該葉片4J8之上表面484 上。該支撐墊490係適於支撐從該遮盤4 Γ4下表面504延 伸出之中心墊520。該支撐墊490具有拋光處理（finish)， 以最小化在該葉片418和該遮盤414間之微粒產生，並且 在~實施例中，其係優於約3 2 R M S。 該支撐墊490係與配置來嚙合該遮盤414 丁表面 504之校準特徵5 00交界。該校準特徵500將遮盤414留 置在相對於該葉片418之預定方位上。該校準特徵5〇〇_ 知係置中在與該轴420中心線相距半徑距離處，其係與兮_ 輪420和該基板支撐404中心間之半徑距離相同。該校準 特徵500係經配置以防止遮盤4 1 4在傳送期間從該葉片 418脫離。因為該校準特徵5〇〇係轴向地與該遮盤414之 中心對準，因此該遮盤414和該葉片418間之旋轉定位的 需要被有利地去除了’同時在熱變化（thermai changes)期 間維持了該遮盤414和該葉片418之對準，而沒有改變該 葉片418將該遮盤414安置在基板支撐4〇4之預定位置（例 如同轴地）上的能力。 在一實施倒中’該校準特徵5〇〇係在該支撐墊490 和該遮盤414下表面504間延伸之柱狀物53〇。該校準柱 530可以是該葉片418之主體442之一整合部分，或構成 一分離元件。並且預期到校準杈53〇可以是該遮盤414之 一部分’並且可能與形成在該葉片418内之孔洞交界。 15 1356100 在第5圖所描繪之實施例中，該校準柱530具有與 該遮盤414連結之第一端510。該校準柱530可以經由各 種方法與該葉片418連結，包含螺釘固定（screwing)、鉚接 (riveting)、銅焊（brazing)、焊接（welding)、嵌入裝配 (press-fitting)和支柱法（staking)，除了其他方法之外。該 校準柱530之第二端512係經配置為與該第一端510相 對，並且係安置為與形成在該遮盤414下表面504内之盲 孔5 02嚙合。 該校準柱530之第二端512可以去角、圓化或錐形 化，以促進與該遮盤414之盲孔502的對準和嚙合。在一 實施例中，盲孔502可以選擇性地包含一呈喇叭型展開之 側壁596，以進一步輔助該柱530進入該盲孔502。 一空白區498係經形成在該葉片418之上表面484 内，並橫向地將該支撐墊490和該邊緣槽492分開》該空 白區498通常係在一相對於該葉片418下表面516比該支 撐墊490低之位置，以及相對於該下表面516比該邊緣槽 492高之位置。該空白區498之較低位置使遮盤4 14可以 在被支撐在該支撐墊490上時，保持與該葉片418剩餘部 分間之隔離的關係。 該遮_盤414通常係指一基本上呈碟狀之主體508 ’ 界定在該下表面504和一上表面506間。該主體508可由 適於在PVD處理室中使用之材料製成，例如不鏽鋼或鈦， 除了其他材料之外。在一實施例中，該主體508係由與構 成該葉片418之材料相比，具有相似或相同熱膨脹係數之 16 1356100 材料製成。選擇性地，孔洞480可以穿過該葉片418之主 體442形成，以最小化慣性力矩（moment of inertia)、重量 和葉片418之熱慣性（thermalinertia)。 該遮盤414之下表面5 04包含一中心墊520和一向 下延伸之環狀邊緣5 2 2。該中心墊5 2 0係經配置為與該葉 片418之校準特徵500交界，並且在第5圖所描繪之實施 例中，包含形成在該中心墊520内、軸向沿著該遮盤418 之中心線之盲孔502。一般來說，該中心墊5 20具有與該 葉片4 1 8之支撐墊490相似之表面光潔度（即，至少與約 3 2 RMS —樣平滑），以最小化在其間的微粒產生。 該遮盤414可以包含將該中心墊520和邊緣522分 開之凹槽524。該凹槽524使該遮盤414的大部分可以在 遮盤414座落在該葉片418上時保持與該葉片418不接觸。 現在參見第5和6圖，該邊緣522係安置在鄰近該 遮盤414之外緣514，並向下延伸至一邊緣面526。該邊緣 面526係定位在一平面上，該平面係與由該中心墊520界 定之平面平行，並與該遮盤主體508之中心線垂直。該邊 緣522從該下表面504延伸出，越過該中心墊520和凹槽 524之位置。該邊緣522之高度係經選擇以提供該遮盤主 體5Ό8和基板支撐404間之間隔（如在第6圖中所示者）， 同時在該遮盤414傳送至該葉片418上時，保持與該邊緣 槽492之隔離。 該邊緣5 22通常配置為具有與該基板支撐404上表 面602之直徑大約相等或更大之直徑。該延伸出之邊緣522 17 1356100 使該遮盤414可以避免該基板支撐404之上表面602在所 選擇之調節製程期間暴露出來之方位妾置在該基扳支士 404上，同時保持該中心墊520和凹槽524相對於基板支 樓4〇4之隔離關係β當該邊緣522相當窄時，基板支撐4〇4 和遮盤4Μ間之接觸區域減到最小，以最小化調節製程期 間之微粒產生及對基板支撐404之潛在傷害。 因此，本發明之實施例已經提供，其描述在調節製 程期間有利地幫助| 士 助基板支撐之保濩之遮盤機構。在一實施 例中，該遮盤機播 構提供關於遮盤之位置的資訊。在另一個 實施例中，該遮盤椹 处姑絲〜 機構包含有利地消除將遮盤機構與葉片 做旋轉定位的需要 ^ 之校準特徵。 雖然上述者係 明之其他及進一步 對本發明之較佳實施例，但是本發 出，並且其範圍係由實施例可在不背離其基本範圍下設計 【圖式簡單說明】、下述之申請專利範圍來判定。 本發明之吏具 藉由參考該些實施例2述，簡短地在前面概述過，可以 是需要注意的是，#得到，其係在所附圖示中示出。但 因此不應被認4係' 肖其只說明Μ Β月之一般實施例’ 他等效實施例》 、範圍之限制，因為本發明可允許其 第1圖推冷出一 Μ塊进付番 ''半導體製程處理室’為具有適於偵 測遮盤機構位置之感麾 题為組件之一音说Λ·丨· 第2Α-Β圖係中之實施例’ 1圖製程處理室一部份的剖面及平 .面圖； 18 1356100 應器 個製 之剖 號來 【主 100 104 108 112 116、 120 124 128 134 138 142 154 158 第3 圖描 繪 出沿 著 第 2A圖 之切線3 — 3 所 組件之 剖面 圖 t 第4 圖描 繪 出具 有 遮 盤機構 :之另一個實 施 程系統 之部 分 切割 圖 y 第5 圖描 繪 出一 葉 片 及第4 圖之遮盤機 構 面圖； 以及 第6 圖描 繪 出配. 置- 在 一基板 支撐上之第 5 e 為了 促進 瞭 解， 只 要 在可能 情況下，皆 使 標示圖 示中 共 有之 相 同 元件。 要元件 符號 說 明】 半導體製程處理室 102 ' 402 處理室J 404 基板 支 撐 106 蓋子組件 408 遮盤 機 構 110 感應器組件 基板 114' 222 、 414 遮 416 外罩 118、 418 葉片 420 軸 122 旋轉密封墊 轴感應器 126 促動器 428 轂 130 遮盤支撐栓 第一窗口 136 第二窗口 頂部區域 140 底部區域 442 平坦 主 體 152、 596 側壁 底部 156 遮盤埠 遮蔽環 160 製程體積 環狀擋板 164 靶材 得之該'感 例之另一 之一遮盤 i之遮盤。 用相同標 :體 盤 19 162 1356100 166 磁電管 182 氣體來源 184 電源 186 摺箱 190 控制器 192 記憶體 1 94 中央處理器 196 支援電路 202 第一感應器 204 第二感應器 206 第三感應器 208 ' 210' 212 i 214 中心點 216 參考點 218 中心轴 220 > 482 凸出部 224 線 302 發射器 304 接收器 306 光束 400 製程系統 406 頂升栓 480 孔洞 484 上表面 490 支撐墊 492 邊緣槽 498 空白區 500 校準特徵 502 盲孔 504 遮盤下表面 506 遮盤上表面 508 主體 5 10 第一端 5 12 第二端 514 外緣 520 中心塾 522 環狀邊緣 524 凹槽 526 邊緣面 530 校準柱 602 基板支撐上表面 20L356l〇〇Λ·::..,.,---· ♦ ~ . Γ *.·* * · -- _._··· ·*.· :* - .··* 4ρψ m τ t· - 'Technical field to which the invention pertains» Embodiments of the invention are generally related to the same. [Prior Art] Many semiconductor processes are usually in vacuum ring physical vapor deposition (PVD). Generally, a processing chamber in a sealed chamber has a substrate support for supporting a substrate disposed thereon, and the substrate support has an electrostatic charge during electrode matching. A substrate supporting the substrate supported on the substrate is formed on the substrate to be fixed on the top of the processing chamber. A gas (for example) is supplied between the substrate and the target. The target causes ions in the plasma to accelerate toward the target. The ion material is removed from the target. The removed material is attracted toward depositing a material. Membrane. Generally, the conditioning operation in the PVD processing chamber to ensure process efficiency is called the burning-in the target. The hot dry other contaminants are removed from the surface of the target and are usually exposed to the environment. Or after a period of inactivity, the utility wafer or the shutter is disposed on the support material, and the plasma is formed in the heat target processing chamber, and the plasma is used to dye from the dye. Executed in a physical vapor deposition environment, for example, in a chamber, a sealed pedestal. The pedestal is placed therein for fabrication. Usually formed by depositing above the substrate, generally I gas) The plasma is biased to guide the target, causing the material to be directed to the substrate, and in the upstream adjustment operation. The first conditioning process typically supports the substrate during the processing of the chamber and during the process of the thermal target, so that the process is typically included in the surface of the L material removal material. 3 1356100 The second light adjustment process is called pasting. Coating is generally performed over a conventional PVD process, applying a blanket over the material deposited on the process chamber component. For example, a PVD application of nitriding typically results in the formation of a layer of titanium nitride on the surface of the PVD processing chamber. . The titanium nitride layer is typically fragile and may peel off during subsequent processing. The coating is typically applied to a layer of titanium on the nitrile layer. The titanium layer greatly prevents the underlying titanium nitride from being peeled off or detached. In general, the processing chamber is applied at predetermined intervals, for example, after 25 substrates are processed using a conventional titanium nitride PVD process. For example, a thermal shield is disposed on the substrate support to prevent the target material from depositing thereon during the coating process. In addition, in the PVD process in which the titanium nitride is applied in situ, the target needs to be cleaned before each deposition to remove the possible presence of titanium nitride deposited on the previous substrate. Nitride. In general, a dry cleaning system is similar to a hot target process, has a duration of a few seconds, and includes protecting the substrate support with a shutter. After each thermal target, coating, and cleaning process is completed, the shutter is rotated by a robotic arm disposed in the PVD processing chamber to an unobstructed position in the deposition process in the mask that does not interfere with the processing chamber. In order to center the shutter, the sensor is used to detect the rotational position of the arm on the shaft connected to the robot arm. The problem of the configuration of the position of the shutter in the barrier-free position is that the sensor cannot be determined. The relative position of the shutter to the robot arm. For example, the difference between the shutter and the robot arm may cause the portion of the shutter to remain on the path of the ceramic substrate support. When the ceramic branch rises to 1356100, the disk 114 is not in the position where the substrate support 104 or the substrate 112 seated thereon is in contact during the process. An example of a process chamber 100 is an IMP VECTRATM PVD process chamber that is applicable and beneficial to the present invention and is available from Applied Materials, Inc. of St. Colac, California. The illustrated process chamber 100 includes a process chamber body 1〇2 and a lid assembly 106 defining a process volume 160 that can be evacuated. The process chamber body 102 is typically fabricated from a single aluminum block or a welded stainless steel disk. The process chamber body 102 generally includes a side wall 152 and a bottom portion 154. The side wall typically contains a plurality of apertures including a groove 埠, a suction 埠 and a shutter 156 (the groove and suction 埠 are not shown). A sealable recess 埠 provides the entrance and exit of the substrate 112 at the process chamber 100. The suction tether is coupled to a suction system (not shown) that empties and controls the pressure within the process volume 160. The shutter 156 is configured to allow at least a portion of the shutter 114 to pass therethrough when the shutter 114 is in the accessible position. A cover 116 generally covers the shutter 156 to maintain the integrity of the vacuum within the process volume. The cover assembly 106 of the body 102 generally supports an annular broadcast panel 162' from which it is suspended. A shadow ring of the support ring is generally configured to limit deposition to the substrate 112 through the shield. The lid assembly 106 generally includes a cover 164 and a magnetron 166. The target 164 provides material to be deposited on the substrate ι2 during the PVD process, and the magnetron 166 is improved in the process. The uniform consumption of the target material during the period. The target 164 and the substrate support 104 are biased by a power source U4 relative to the other 3561. For example, an argon gas body is supplied from a gas source 1 82 to the process volume. 160. A plasma is formed from the substrate between the substrate 1丨2 and the dry material 164. The ions in the plasma are accelerated toward the target 164 and cause material to be removed from the target 164. The removed target The material is attracted toward the substrate 112 and a film of material is deposited thereon. + The substrate support 104 is typically disposed on the bottom 154 of the processing chamber body 1 2 and supports the substrate 112 during processing. 104 use a lift (not shown) is coupled to the bottom 154, the lift mechanism being configured to move the substrate support between a lower position (as shown) and a higher position. The substrate support 104 is moved to the lower The high position is used for the process. In the upper position, the substrate 112 is disposed on the substrate support 104 and is coupled to the shadow ring 158 to lift the shadow ring 158 from the baffle 162. In the low position, the substrate support 104 is placed under the bezel ι62 so that the substrate 112 can be removed from the processing chamber 1 through the dam in the side wall 152 while cleaning the ring 158 and the baffle 162. A lift pin (not shown) is selectively moved through the substrate support 104 to separate the substrate 112 and the substrate support 104' to utilize a wafer transfer mechanism disposed outside the process chamber For example, a single blade mechanism (not shown) facilitates the stabilization of the substrate. A bellows 186 is typically disposed between the substrate support 1〇4 and the bottom of the process chamber 154 and provides a resilient seal therebetween, thereby maintaining The vacuum integrity of the process chamber volume 160. The substrate support 104 is typically made of aluminum, stainless steel, ceramic or a combination thereof. A substrate support 1 4 that can be adapted from the present invention is approved at 8 1356100, April 16, 1996, to Davenport et al. 5, 5 0, 4 9 9 , which is hereby incorporated by reference in its entirety, the entire sizing mechanism 108 is generally disposed adjacent to the substrate support. The shutter mechanism 108 generally includes support The stool of the shutter 114 and the actuator 126 coupled to the blade 118 by a shaft 120. The gasket 1 22 is configured to pass through the bottom of the process chamber 154 such that the crucible can be rotated without leaking vacuum from the chamber volume 160. The actuator 126 generally controls the angular positioning of the blade. The blade 118 is in the unobstructed position shown in Fig. 1 and substantially the disk 114 is placed in a second position at the center of the substrate support 104. In the second position, the heat shield and the processing chamber may be coated with the hair to convey the shutter 114 (using the jacks) to the substrate support, during the thermal target and process chamber coating process, The blade 118 is an unobstructed position. The actuator 126 can be adapted to rotate the shaft 120 at an angle that moves the 118 between the unobstructed position and the second position. The actuator 126 can be an electronic, hydraulic, or air motor or hydraulic cylinder, or a solenoid, among other moving devices. The 126 can include a shaft sensor 124 that detects when the shaft 120 is rotated to a second position. The shaft sensor 124 can be coupled directly to the actuation; for example, with a rotary encoder or limit switch, or can be coupled thereto, such as with a limit switch. Other sensors 124 adapted to detect the angular position may also be used. Patent No. 4, 104, 118, a rotation: Axis 1 20 out. Usually, the interval between shifts is shifted to 1 0 4 . Returning to the blade, the pneumatic actuator is rotated to the camera 126, 120, and the shaft 120 1 1356100. The blade 118 generally supports the shutter 114 in a horizontal direction. The blade 118 generally has a flat body 142 that includes a hub 128 coupled to the shaft 120 and at least three shutter support-bolts 130 extending therefrom. The support pins 130 generally support the shutter 114 in isolation from the blade 118. The vane 118 is configured to rotate the vane 118 from the second position to an unobstructed position without contacting the jacks extending from the vane 118. The blade 118 additionally includes a projection 220 (shown in Figure 2A) that extends beyond the edge of the shutter 114. When in the unobstructed position, a portion of the shutter 1 14 is disposed in the outer cover 116. The outer cover 116 is generally made of the same material as the processing chamber body 102. The outer cover 116 is sealingly joined to the process chamber body 102 and, in one embodiment, is continuously welded at the interface between the outer cover 116 and the body 102 to ensure a vacuum seal of the seam. The outer cover 116 generally includes at least one first window 134 that is sealingly disposed through the outer cover Π6. The first window 134 is positioned such that the sensor assembly 1 1 〇 can detect the presence of the shutter 114 and/or the blade 118 within the housing 116. In the embodiment illustrated in FIG. 1, the outer cover 116 additionally includes a second window 136 formed in the bottom region 140 of the outer cover 116 relative to the first window formed in the top region 138 of the outer cover 116. 134. The windows 134, 136 are made of a material that is substantially transparent or non-aggressive to the sensing mechanism of the sensor assembly 11 , such as quartz. The inductor assembly 1 1 〇 is typically disposed adjacent the housing π 6 . The sensor assembly 1 1 generally includes at least one sensor adapted to detect the presence of the blades 118 and 7 or the shutter 4 of the inner cover 6 10 1356100, preferably when in an unobstructed position. The inductor assembly 110 is coupled to a controller 丨9 〇 that interfaces with the process system 100 and typically controls the process system 1 〇〇. - The controller 190 generally includes a central processing unit (CPU) 194, a support circuit ι96, and a memory port 192. The CPU 194 can be any of any of the forms of computer processors that can be used in industrial settings to control various processing chambers and sub-processors. The memory 192 is coupled to the CPU 1 94. The memory 192, or computer readable medium, can be one or more readily available memories, such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other. Digital storage of the form, near or far. The support circuit 96 is coupled to the CPU 1 94 and utilizes conventional means to support the processor. These circuits include caches, power supplies, clock circuits, input/output circuits, subsystems, and the like. The sensors, including at least one of the sensor assembly 110 and the shaft sensor 124, provide information about the position of the shutter 114 and/or the blade 8 to the controller 190. 2A-B depict a top and cross-sectional plan view of the outer cover 116, showing an embodiment of the sensor assembly relative to the shutter 114, the blade 118, and the substrate support 104. Readers are encouraged to refer to both 2A-2B. In the embodiment shown in Figures 2A-B, the sensor assembly includes a first inductor 202, a second inductor 204, and a third inductor 206. The sensors 2〇2, 2 04 and 206 are each coupled to the top 134 of the outer cover 116 by brackets 208, 210 1356100 and 212. These 2 04 and 206 generally provide signals indicating the presence of the 114 stone underneath. The first and second inductors 202, 204 generally define a boundary between the center point 2 1 4 and the reference point 2 1 6 . The reference point 216 is generally located at the center of the shutter 114 in an accessible position. When on (as shown). In one embodiment, the center points 218 of the test points 214, 216 and the shaft 120 are also the locations of the sensors 202, 204 along the line 224 such that the line 224 for the shutter 114 does not touch the substrate support 104. Along the shutter 114 (when properly placed at the shortest distance between the substrate support 104), the first sensor 202 is generally positioned to be located at the unshielded position 1 1 4. The second sensor is generally Detecting that the shutter is misplaced on the blade but still being perceived by the first, as indicated by the dashed cover 222. For example, the position is placed in a non-centered position on the blade 118, and The placement further enters the housing 1 16 . Although the centering position still allows the substrate to support vertical movement without the disk 22, the shutter 222 will be rotated to the second position with the substrate support 104. When coating or hot target, this will cause the material to be on the substrate support 104. Thus, the difference between the second inductors 114 is directed to the controller 1 90, which signals the timing to stop the production process for adjustment. : The sensor 202, ί / or the blade 118 is disposed on the line 224 of the base. The shutter 1 14 , the center and the reference are equidistant. The sensors can provide a clear indication of the shutter 222 when the blade is in the obstacle position, and the detector 202 can detect the shutter 222. The non-positive 222 disk 222 is in contact with the occlusion row, and when the spin material is undesirably deposited 2 04, the occlusion operator or at the appropriate 12 1356100 the third sensor 206 is typically placed to view the A portion of the blade or its projection 220 to indicate that the blade 118 is in an unobstructed position. The projection 220 of the blade 118 can be covered by or extending from the shutter 114 to detect the blade 1 18 when the shutter 114 is also in the unobstructed position. Alternatively, the third sensor 206 can be positioned to view the substrate through the first window 134 or other window disposed in the housing 116. Figure 3 depicts a cross-sectional view of one embodiment of the inductors 202, 204 taken along tangent 3-3 of Figure 2A. The sensors 2〇2, 2 04 generally comprise a transmitter 032 and a receiver 304. The transmitter 302 produces a signal, such as a beam 306, that passes through the windows 134, 136 and illuminates the receiver 304. When the shutter 114 blocks or blocks the beam 306, the sensors 202, 204 change state to indicate the presence of the shutter 114. An example of the sensors 202, 204 that can be used to detect the shutter 114 is available from Banner Engineering Corporation of Minneapolis, Minnesota. Other types of sensors can also be used, including reflective sensors (i.e., devices in which the transmitter and receiver are disposed in a single unit). The third sensor 206 is similarly configured to detect the blade 11 8 Existence. Section 4 depicts a partial cutaway view of an exemplary process system 400 having another embodiment of a shutter mechanism 408 for selectively protecting a substrate support 404. The process system 400 is generally similar to the process system 100 described above and includes a process chamber body 402' coupled to a housing 416. The housing provides a storage location for a shutter 414 (shown in phantom in Figure 4). 1356100, when moved as shown without touching the substrate support 04. The shutter mechanism 40 8 is typically disposed adjacent the substrate support 404' and includes a blade 41.8 that supports the shutter 414. The vane 418 is rotatable about the axis 420 at a first barrier-free position that causes the shutter 414 to be at least partially disposed within the outer cover 416 (as shown in FIG. 4) and as described above (and as shown in FIG. 6 As shown, the shutter 414 is facilitated to be transferred between the second positions of the substrate support 04. The blade 418 is typically fabricated from a sturdy material suitable for use in a vacuum process environment, such as a physical vapor deposition process chamber. In an embodiment, the blade 418 is made of titanium. In another embodiment, the blade 418 and the shutter 414 are made of a material having substantially the same or the same coefficient of thermal expansion to minimize movement therebetween. In one embodiment, the vane 418 has a body 442 that includes a retaining pad 428, a support pad 49Q, and an edge slot 492. The hub 428 is coupled to the shaft 420 to facilitate rotation of the blade 418. The body of the blade 418 is configured such that the blade 4 18 can be rotated from the second position to the unobstructed position without contacting the jacking bolt 406 extending from the substrate support 404. The body 442 of the blade 418 can additionally include a projection 482 that extends beyond the edge of the shutter 414. The blade 418 is designed such that the male portion 482 can be placed in position as the blade 418 is retracted into the outer cover 416 to change the output state of the sensor assembly 410. The sensor assembly 410 can be configured similar to the sensor assembly 110 of Figure 1. The sensor assembly 410 can also be configured to interface with the vane 418 and the shutter 414, similar to the inductor assembly 10, the vanes 118 14 1356100 and the shutter 1 14 described above. See also the cross-sectional view of the vane 418 and the shutter 414 of Fig. 5; the support pad 490 of the vane 418 is disposed on the upper surface 484 of the vane 4J8. The support pad 490 is adapted to support a center pad 520 extending from the lower surface 504 of the shutter 4 Γ4. The support pad 490 has a finish to minimize particle generation between the blade 418 and the shutter 414, and in an embodiment, is better than about 3 2 R M S. The support pad 490 interfaces with a calibration feature 500 that is configured to engage the face 414 of the shutter 414. The calibration feature 500 retains the shutter 414 in a predetermined orientation relative to the blade 418. The calibration feature is located at a radial distance from the centerline of the shaft 420 and is the same as the radius between the center of the wheel 420 and the center of the substrate support 404. The calibration feature 500 is configured to prevent the shutter 4 14 from escaping from the blade 418 during transport. Because the alignment feature 5 is axially aligned with the center of the shutter 414, the need for rotational positioning between the shutter 414 and the blade 418 is advantageously removed 'there are also thermo changes. The alignment of the shutter 414 and the blade 418 is maintained during the process without changing the ability of the blade 418 to position the shutter 414 at a predetermined location (e.g., coaxially) of the substrate support 4〇4. In an implementation, the alignment feature 5 is a post 53 延伸 extending between the support pad 490 and the lower surface 504 of the shutter 414. The calibration column 530 can be an integral part of the body 442 of the blade 418 or constitute a separate component. It is contemplated that the calibration 杈 53 〇 may be part of the shutter 414 and may interface with a hole formed in the blade 418. 15 1356100 In the embodiment depicted in FIG. 5, the calibration post 530 has a first end 510 coupled to the shutter 414. The calibration post 530 can be coupled to the blade 418 via a variety of methods, including screwing, riveting, brazing, welding, press-fitting, and staking. , among other methods. The second end 512 of the calibration post 530 is configured to be opposite the first end 510 and is configured to engage a blind bore 502 formed in the lower surface 504 of the shutter 414. The second end 512 of the calibration post 530 can be chamfered, rounded or tapered to facilitate alignment and engagement with the blind hole 502 of the shutter 414. In one embodiment, the blind via 502 can optionally include a flared sidewall 596 to further assist the post 530 into the blind via 502. A blank region 498 is formed in the upper surface 484 of the blade 418 and laterally separates the support pad 490 from the edge groove 492. The blank region 498 is generally attached to the lower surface 516 of the blade 418. The support pad 490 is at a lower position and a position higher than the edge groove 492 relative to the lower surface 516. The lower position of the blank area 498 allows the shutter 4 14 to remain in an isolated relationship with the remainder of the blade 418 when supported on the support pad 490. The shutter 414 generally refers to a substantially dish-shaped body 508' defined between the lower surface 504 and an upper surface 506. The body 508 can be made of a material suitable for use in a PVD processing chamber, such as stainless steel or titanium, among other materials. In one embodiment, the body 508 is made of 16 1356100 material having similar or identical coefficients of thermal expansion as compared to the material from which the blade 418 is constructed. Optionally, a hole 480 can be formed through the body 442 of the blade 418 to minimize the moment of inertia, the weight, and the thermal inertia of the blade 418. The lower surface 504 of the shutter 414 includes a center pad 520 and a downwardly extending annular edge 52 2 . The center pad 520 is configured to interface with the calibration feature 500 of the blade 418 and, in the embodiment depicted in FIG. 5, includes a central 520 formed therein, axially along the visor 418 The blind hole 502 of the center line. In general, the center pad 5 20 has a surface finish similar to the support pad 490 of the blade 418 (i.e., at least about 3 2 RMS smooth) to minimize particle generation therebetween. The shutter 414 can include a recess 524 that separates the center pad 520 from the edge 522. The recess 524 allows a substantial portion of the shutter 414 to remain out of contact with the blade 418 when the shutter 414 is seated on the blade 418. Referring now to Figures 5 and 6, the edge 522 is disposed adjacent the outer edge 514 of the shutter 414 and extends down to an edge face 526. The edge face 526 is positioned on a plane that is parallel to the plane defined by the center pad 520 and perpendicular to the centerline of the shutter body 508. The edge 522 extends from the lower surface 504 past the center pad 520 and the recess 524. The height of the edge 522 is selected to provide spacing between the shutter body 5Ό8 and the substrate support 404 (as shown in FIG. 6) while maintaining the shutter 414 on the blade 418. The edge groove 492 is isolated. The edge 5 22 is typically configured to have a diameter that is about equal or greater than the diameter of the surface 602 of the substrate support 404. The extended edge 522 17 1356100 allows the shutter 414 to prevent the upper surface 602 of the substrate support 404 from being exposed on the base 404 during the selected adjustment process while maintaining the center pad The relationship between the 520 and the recess 524 relative to the substrate support 4〇4. When the edge 522 is relatively narrow, the contact area between the substrate support 4〇4 and the shutter 4Μ is minimized to minimize the particles during the adjustment process. Potential damage to the substrate support 404 is created. Accordingly, embodiments of the present invention have been provided which describe a shutter mechanism that advantageously assists in the support of the substrate during the conditioning process. In one embodiment, the shutterer provides information about the location of the shutter. In another embodiment, the guillotine-mechanism at the cover plate includes a calibration feature that advantageously eliminates the need to rotationally position the shutter mechanism with the blade. While the above is a further and further preferred embodiment of the present invention, the present invention, and the scope thereof, can be designed by the embodiment without departing from the basic scope of the invention. determination. The cooker of the present invention is briefly described above with reference to the second embodiment, and it may be noted that #出的, which is shown in the accompanying drawings. However, it should not be recognized as a 4 series'. Xiao Qi only explains the general embodiment of the Β Β ' 他 他 他 他 他 他 他 他 他 他 他 他 他 他 他 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为 因为''Semiconductor Process Processing Room' is a part of the process processing room with a sensory component that is suitable for detecting the position of the shutter mechanism. 实施·丨· 2nd-Β diagram system Section and plan view; 18 1356100 The section number of the device is made [Main 100 104 108 112 116, 120 124 128 134 138 142 154 158 Figure 3 depicts the tangent 3 - 3 along the 2A diagram Sectional view of the component t Figure 4 depicts a partial cut view of another implementation system with a shutter mechanism: Figure 5 depicts a face view of a blade and a fourth figure; and Figure 6 depicts Matching - 5 e on a substrate support To facilitate understanding, whenever possible, the same components are common to the illustrations. Description of the components: semiconductor processing chamber 102' 402 processing chamber J 404 substrate support 106 cover assembly 408 shutter mechanism 110 sensor assembly substrate 114' 222, 414 shield 416 housing 118, 418 blade 420 shaft 122 rotary seal shaft sensing 126 actuator 428 hub 130 shutter support plug first window 136 second window top region 140 bottom region 442 flat body 152, 596 sidewall bottom 156 shutter 埠 shield ring 160 process volume annular baffle 164 target The other one of the 'feelings' covers the disk. Use the same standard: body disk 19 162 1356100 166 magnetotube 182 gas source 184 power supply 186 folding box 190 controller 192 memory 1 94 central processor 196 support circuit 202 first sensor 204 second sensor 206 third sensor 208 ' 210' 212 i 214 Center Point 216 Reference Point 218 Center Axis 220 > 482 Projection 224 Line 302 Transmitter 304 Receiver 306 Beam 400 Process System 406 Jacking Bolt 480 Hole 484 Upper Surface 490 Support Pad 492 Edge Slot 498 Blank area 500 calibration feature 502 blind hole 504 cover lower surface 506 cover upper surface 508 body 5 10 first end 5 12 second end 514 outer edge 520 center turn 522 annular edge 524 groove 526 edge face 530 calibration post 602 Substrate support upper surface 20