TWI343128B - Substrate module and manufacturing method of flexible array substrate - Google Patents

Substrate module and manufacturing method of flexible array substrate Download PDF

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Publication number
TWI343128B
TWI343128B TW096108220A TW96108220A TWI343128B TW I343128 B TWI343128 B TW I343128B TW 096108220 A TW096108220 A TW 096108220A TW 96108220 A TW96108220 A TW 96108220A TW I343128 B TWI343128 B TW I343128B
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Taiwan
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substrate
flexible
buffer layer
array
manufacturing
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TW096108220A
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Chinese (zh)
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TW200837954A (en
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Kuo Lung Fang
Jiunn Jye Hwang
Han Tu Lin
Chia Chi Tsai
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Au Optronics Corp
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Priority to TW096108220A priority Critical patent/TWI343128B/en
Priority to KR1020070061774A priority patent/KR100908902B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Filters (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Description

AU0605052 2191 Otwf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種基板模組及陣列基板的製造方 法’且特別是有關於一種基板模組及可撓性陣列基板的製 造方法。 【先前技術】 平面顯示器是否具備可撓性，取決於其所使用的基板 材質。當平面顯示器所使用的基板為硬質基板（如玻璃基 板）時’平面顯示器將不具有可撓性。反之，平面顯示器 所使用的基板為可撓性基板（如塑膠基板）時，平面顯示 器便具有良好的可撓性。 目前’在硬質基板上製作薄膜電晶體的技術已漸趨成 熟’但在可撓性基板上製作薄膜電晶體的技術仍有待開 發。一般來說’若要在可撓性基板上製作薄膜電晶體，通 常需先將可撓性基板黏著於硬質基板上，之後才進行一系 列的成膜製程。由於可撓性基板與硬質基板的熱膨脹係數 差異(thermal expansion coefficient mis_match)很大，在可撓 性基板上進行不同的成膜製程（高溫製程）、微影製程以 及蝕刻製程時，常會因為操作溫度升高而使可撓性基板產 生翹曲。值得注意的是，在嚴重翹曲的可撓性基板上進行 成膜製程，將會使得膜層與膜層之間發生嚴重的誤對準 (mis-alignment) ’進而導致製程失敗。因此，可撓性陣列基 板的製程良率一直很難提升。 土 AU0605052 21910twf.doc/n 【發明内容】 本發明是提供一種可撓性陣列基板的製造方法，以改 善可撓性基板發生翹曲的問題。 本發明是提供一種基板模組’以增進可撓性陣列基板 的製程良率。 本發明提出一種可撓性陣列基板的製造方法，其包括 以下步驟。首先，提供一硬質基板。然後，形成緩衝層於 硬質基板上，使緩衝層以及硬質基板產生第一彎曲方向。 接著’將可撓性基板黏著於緩衝層上。隨之，於可撓性基 板上進行成膜製程。其中，進行成膜製程時，可撓性基板 產生第二彎曲方向，且第一彎曲方向與第二彎曲方向大致 相反。 本發明另提出一種可撓性陣列基板的製造方法。首 先’提供硬質基板。然後，於硬質基板上形成缓衝層，其 中緩衝層之材質包括金屬或金屬化合物。接著，將可撓性 基板黏著於緩衝層上。隨之，於可撓性基板上進行成膜製 程。 本發明更提出一種可撓性陣列基板的製造方法。首 先，提供硬質基板。接著，於硬質基板上形成缓衝層。隨 後，藉由黏著層將可撓性基板與緩衝層接合。然後，於可 撓性基板上進行成膜製程。 在本發明之一實施例中，上述之緩衝層之熱膨脹係數 小於硬質基板之熱膨脹係數或是等於硬質基板之熱膨脹係 數。另外，緩衝層之熱膨脹係數也可以是介於硬質基板之 1343128 AU0605052 21910twf.doc/n 熱膨嚴係與可撓性基板之熱膨脹係之間。 在本發明之一實施例中’上述之將可撓性基板黏著於 緩衝層之步驟包括先於緩衝層上形成黏著層，接著再藉由 黏著層接合可撓性基板以及緩衝層。或是，先於可撓性基 板上形成黏著層’再藉由黏著層接合可撓性基板以及緩衝 層。 在本發明之一實施例令，在完成成膜製程後，更包括 令可撓性基板與緩衝層分離。 在本發明之一實施例中，上述之可撓性基板包括塑膠 基板’而硬質基板包括玻璃基板。 在本發明之一實施例中，上述之成膜製程包括主動元 件陣列製程、彩色濾光片製程，或前述製程之組合。其中， 主動元件陣列製程例如是非晶矽薄膜電晶體陣列製程或多 晶矽薄膜電晶體陣列製程。 在本發明之一實施例中，上述之緩衝層之材質包括金 屬或金屬化合物。詳言之，緩衝層之材質例如是鋁、銅、 銷、鈦、鉻、钽或鎢等金屬或其化合物。 本發明又提出一種基板模組。此基板模組包括硬質基 板、緩衝層、黏著層以及可撓性基板。緩衝層配置於硬質 基板上，而粘著層配置於緩衝層上’另外可撓性基板藉由 黏著層與緩衝層接合。 本發明再提出一種基板模組。此基板模組包括硬質基 板、緩衝層以及可撓性基板。緩衝層配置於硬質基板上， 7 134.3128 AU0605052 2191〇twf.doc/n 且緩衝層之材質包括金屬或金屬化合物。另外，可撓性基 板黏著於緩衝層上。 在本發明之一實施例中，上述之緩衝層之熱膨脹係數 小於硬質基板之熱膨脹係數或是等於硬質基板之熱膨脹係 數。另外’緩衝層之熱膨脹係數也可以是介於硬質基板之 熱膨脹係與可撓性基板之熱膨脹係之間。 在本發明之一實施例中，上述之基板模組更包括一黏 著層，以使可撓性基板藉由黏著層與緩衝層接合。 在本發明之一實施例中’上述之基板模組更包括一陣 列結構，其形成於可撓性基板上。另外，上述之陣列結構 包括一主動元件陣列、一彩色濾光片陣列或上述組合。其 中’主動元件陣列包括一非晶矽薄膜電晶體陣列或一多晶 矽薄膜電晶體陣列》 在本發明之一實施例中’上述之可撓性基板包括一塑 膠基板，而硬質基板包括一玻璃基板。 在本發明之一實施例中’上述之緩衝層之材質包括金 屬或金屬化合物。實質上’緩衝層之材質例如是鋁、銅、 翻、欽、絡、扭或鶴等金屬或其化合物。 由於本發明將可撓性基板黏著在一緩衝層上，因此可 撓性基板因溫度改變而膨脹收縮所產生的應力能夠被緩衝 層的内應力抵消。如此’可撓性基板在進行成膜製程當中， 不易因為可撓性基板的魅曲或形變而導致製程失敗。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉實施例’並配合所附圖式’作詳細說明如 8 AU0605052 21910twf.d〇c/n 下。 【實施方式】 圖1A卵id繪示本發明之一實施例之可挽性陣列 基板之製造流㈣面圖，_ m繪示本發明之一實施例 之基板模組之上視圖。 清參照圖1A ’首先，提供-硬質基板110，此硬質基 板110例如是_基板、石英基板或是絲板^接著， 在硬，基板11G上形成緩制12()。具體來說，緩衝層12〇 例如是由鋁、銅、鉬、鈦、鉻、鈕或鎢等金屬或其化合物 =組成的。在本實施例中，緩衝層12〇的形成方式例如是 藉由物理氣相沉積（如濺鍍）或是化學氣相沉積等方式將 金屬或是金屬化合物形成於硬質基板11〇上。在形成緩衝 層120的過程中，本實施例可以藉由調整物理氣相沉積或 化學氣相沉積的製程條件，例如製程溫度、反應氣體流量、 製程壓力等，以使形成於硬質基板11〇上之金屬或是金屬 化合物具有不同的應力狀態。在本實施例中，藉由形成緩 衝層120時的製程調整可使緩衝層120與硬質基板11〇產 生向第一彎曲方向B1的彎曲。 接著請參照圖1B，接合可撓性基板no以及緩衝層 120，其例如是將可撓性基板13〇黏著於緩衝層ι2〇上。具 體而s ’本實施例可先於緩衝層12〇上形成黏著層14〇， 再藉由黏著層140接合可撓性基板130以及緩衝層12〇。 然而，在其他實施例中，亦可先將黏著層14〇形成於可撓 性基板130上，再藉由黏著層MO接合可撓性基板13〇以 AU0605052 21910twf.doc/n 及緩衝層120。其中，可撓性基板13〇例如是具備良好的 可撓性(flexibility)之塑膠基板。 接著請參照圖1C，在可撓性基板13〇上進行成膜製 程150 ’以於可撓性基板13〇上形成陣列結構16〇。一般而 吕，成膜製程150例如是主動元件陣列製程、势多.念 製程，或前述製程之組合。當所進行之成膜製== 動元件陣列製程時，可撓性基板130上所形成之陣列結構 160為主動元件陣列；當所進行之成膜製程15〇為彩色濾 光片製程時，可撓性基板130上所形成之陣列結構即 為衫色濾光片陣列。另一方面，當所進行之成膜製程15〇 同時包含主動元件陣列製程以及彩色濾光片製程時，可撓 性基板130上所形成之陣列結構160則為c〇A(c〇1〇rfllter on Array)陣列結構或 AOC(array on color filter)陣列結 構。承上述，主動元件陣列製程例如是非晶矽薄膜電晶體 陣列製程或多晶矽薄膜電晶體陣列製程。 一般而言’成膜製程150在進行時，常會伴隨溫度的 化’而可挽性基板130具有較大的膨服係數，在升溫降 溫的過程當中常會有顯著的體積變化。進行成膜製程15〇 時’常因為黏著於硬質基板110上的可撓性基板13〇之膨 脹或收縮而使可撓性基板130產生第二彎曲方向B2的魅 曲或變形’進而造成曝光或是焦聚不良等問題。因此，本 發明知:出藉由緩衝層120的配置以減小可挽性基板1在 成獏製程150中產生翹曲的程度。具體來說，當緩衝層12〇 之熱膨脹係數介於可撓性基板130及硬質基板11〇之間， 1343128 AU0605052 2191 Otwf.doc/n 則緩衝層120的熱膨脹與收縮可以減緩可撓性基板13〇在 成膜製程150中產生之翹曲現象。然而，緩衝層12〇的熱 膨脹係數若是小於或等於硬質基板11〇之熱膨脹係數，則 可藉由形成緩衝層120時產生之應力表現抵消可撓性基板 130在成膜製程150中產生熱膨脹收縮之應力表現。在本 實施例中，形成緩衝層120時，可以藉由製程條件的控制 使緩衝層120與硬質基板11〇產生彎曲之第一彎曲方向則 與可撓性基板130產生翹曲的第二彎曲方向B2大致相 反。如此一來，可撓性基板13〇因溫度改變發生體積變化 而造成朝向第一彎曲方向B2輕曲的量可以大幅減少，也 因此使得可撓性陣列基板的製程良率有效地被提升。 接下來，請參照圖1D，在完成成膜製程15〇之後， 本實施例可採用加熱、降溫或是光照等處理方式使可撓性 基板130與硬質基板no分離。具體而言，本實施例可先 利用加熱、降溫或是光照等處理方式使黏著層14〇黏性降 低後，再將可撓性基板130自硬質基板ho上取下。實際 上，請參照圖1E所繪示之基板模組1〇〇的上視圖，可撓 性基板130例如可以再切成多個較小尺寸的面板132 ^詳 言之，將可撓性基板130自硬質基板no上取下前，例如 可以先將可撓性基板130切割成多個面板132，再使可撓 性基板130與硬質基板11〇分離。或是，於可撓性基板13〇 與硬質基板110分離之後’再將可撓性基板13()切割成多 個面板132 °其中，切割可撓性基板13〇的方法例如是採 用雷射切割或是機械切割的方式。 1343128 AU0605052 21910twf.doc/n 綜上所述，本發明之基板模組以及可撓性陣列基板的 製造方法中’可藉由不同製程條件使缓衝層沈積在硬質板 板上所形成的應力狀態依照不同需求而有所調整。當缓衝 層因熱膨脹係數小於或等於硬質基板之熱膨脹係數時，藉 由製程條件的調整可使緩衝層於硬質基板上產生之應力表 現與可撓性基板在成膜製程之中熱膨脹收縮所產生的應力 表現相互抵消。另一方面，當緩衝層之熱膨脹係數介於可 撓式基板及硬質基板之間，則可撓性基板在經過成膜製程 中所導致之撓曲現像可以有效減小。因此，可撓性基板隨 著溫度上升或下降而產生的翹曲或變形量可以大幅減少， 使得成膜製程的對位精準度提高，且可撓性陣列基板的製 程良率也會隨之提高。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明’任何所屬技術領域中具有通常知識者，在不脫離 本發明之精神和範圍内，當可作些許之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者為 準。 * 一 【圖式簡單說明】 圖到圖10繪示本發明之一實施例之可撓性陣列 基板之製造流程剖面圖。 圖1E繪示本發明之一實施例之基板模組之上視圖。 【主要元件符號說明】 1〇〇 ·基板模組 uo:硬質基板 12 1343128 AU0605052 21910twf.doc/n 120 :緩衝層 130 :可撓性基板 132 :面板 140 :黏著層 150 :成膜製程 160 :陣列結構 B1 :第一彎曲方向 B2 :第二彎曲方向AU0605052 2191 Otwf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a substrate module and a method of fabricating an array substrate, and more particularly to a substrate module and a flexible array substrate Manufacturing method. [Prior Art] Whether a flat panel display is flexible depends on the substrate material used. When the substrate used in the flat panel display is a rigid substrate (e.g., a glass substrate), the 'flat panel display will have no flexibility. On the other hand, when the substrate used for the flat panel display is a flexible substrate (such as a plastic substrate), the flat display has good flexibility. At present, the technology for fabricating thin film transistors on a rigid substrate has gradually become more mature, but the technology for fabricating thin film transistors on a flexible substrate has yet to be developed. In general, if a thin film transistor is to be formed on a flexible substrate, it is usually necessary to adhere the flexible substrate to the rigid substrate before performing a series of film formation processes. Since the thermal expansion coefficient mis_match of the flexible substrate and the hard substrate is large, when performing different film forming processes (high temperature process), lithography process, and etching process on the flexible substrate, it is often because of the operating temperature. The rise causes the flexible substrate to warp. It is worth noting that the film formation process on a highly warped flexible substrate will cause a serious mis-alignment between the film layer and the film layer, which in turn leads to process failure. Therefore, the process yield of flexible array substrates has been difficult to increase. AU0605052 21910twf.doc/n SUMMARY OF THE INVENTION The present invention provides a method of manufacturing a flexible array substrate to improve the warpage of the flexible substrate. The present invention provides a substrate module ' to improve the process yield of a flexible array substrate. The present invention provides a method of manufacturing a flexible array substrate comprising the following steps. First, a hard substrate is provided. Then, a buffer layer is formed on the hard substrate to cause the buffer layer and the hard substrate to have a first bending direction. Next, the flexible substrate is adhered to the buffer layer. Subsequently, a film forming process is performed on the flexible substrate. Wherein, in the film forming process, the flexible substrate generates a second bending direction, and the first bending direction is substantially opposite to the second bending direction. The present invention further provides a method of fabricating a flexible array substrate. First, provide a hard substrate. Then, a buffer layer is formed on the hard substrate, wherein the material of the buffer layer includes a metal or a metal compound. Next, the flexible substrate is adhered to the buffer layer. Subsequently, a film forming process is performed on the flexible substrate. The present invention further provides a method of fabricating a flexible array substrate. First, a hard substrate is provided. Next, a buffer layer is formed on the hard substrate. The flexible substrate is then bonded to the buffer layer by an adhesive layer. Then, a film forming process is performed on the flexible substrate. In one embodiment of the invention, the buffer layer has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the rigid substrate or a coefficient of thermal expansion of the rigid substrate. Further, the thermal expansion coefficient of the buffer layer may be between 1343128 AU0605052 21910 twf.doc/n of the rigid substrate and the thermal expansion system of the flexible substrate. In an embodiment of the invention, the step of adhering the flexible substrate to the buffer layer comprises forming an adhesive layer on the buffer layer, and then bonding the flexible substrate and the buffer layer by an adhesive layer. Alternatively, an adhesive layer is formed prior to the flexible substrate, and the flexible substrate and the buffer layer are bonded by an adhesive layer. In an embodiment of the invention, after the film forming process is completed, the flexible substrate is further separated from the buffer layer. In one embodiment of the invention, the flexible substrate comprises a plastic substrate and the rigid substrate comprises a glass substrate. In one embodiment of the invention, the film forming process includes an active device array process, a color filter process, or a combination of the foregoing processes. The active device array process is, for example, an amorphous germanium thin film transistor array process or a polysilicon thin film transistor array process. In an embodiment of the invention, the material of the buffer layer comprises a metal or a metal compound. In detail, the material of the buffer layer is, for example, a metal such as aluminum, copper, pin, titanium, chromium, ruthenium or tungsten or a compound thereof. The invention further provides a substrate module. The substrate module includes a rigid substrate, a buffer layer, an adhesive layer, and a flexible substrate. The buffer layer is disposed on the rigid substrate, and the adhesive layer is disposed on the buffer layer. The flexible substrate is bonded to the buffer layer by the adhesive layer. The invention further provides a substrate module. The substrate module includes a rigid substrate, a buffer layer, and a flexible substrate. The buffer layer is disposed on the rigid substrate, 7 134.3128 AU0605052 2191〇twf.doc/n and the material of the buffer layer includes a metal or a metal compound. In addition, the flexible substrate is adhered to the buffer layer. In one embodiment of the invention, the buffer layer has a coefficient of thermal expansion that is less than a coefficient of thermal expansion of the rigid substrate or a coefficient of thermal expansion of the rigid substrate. Further, the thermal expansion coefficient of the buffer layer may be between the thermal expansion system of the rigid substrate and the thermal expansion system of the flexible substrate. In an embodiment of the invention, the substrate module further includes an adhesive layer for bonding the flexible substrate to the buffer layer by the adhesive layer. In an embodiment of the invention, the substrate module further includes an array structure formed on the flexible substrate. Additionally, the array structure described above includes an active device array, a color filter array, or a combination thereof. The 'active device array includes an amorphous germanium thin film transistor array or a polycrystalline germanium thin film transistor array.' In one embodiment of the invention, the flexible substrate comprises a plastic substrate, and the rigid substrate comprises a glass substrate. In an embodiment of the invention, the material of the buffer layer described above comprises a metal or a metal compound. The material of the buffer layer is, for example, a metal such as aluminum, copper, turn, chin, cord, twist or crane or a compound thereof. Since the present invention adheres the flexible substrate to a buffer layer, the stress generated by the expansion and contraction of the flexible substrate due to the temperature change can be offset by the internal stress of the buffer layer. In such a flexible substrate, during the film forming process, the process failure is not easily caused by the embossing or deformation of the flexible substrate. The above and other objects, features and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; 1A is a top view of a manufacturing flow of a susceptibility array substrate according to an embodiment of the present invention, and _m is a top view of a substrate module according to an embodiment of the present invention. Referring to Fig. 1A', first, a rigid substrate 110 is provided. The hard substrate 110 is, for example, a substrate, a quartz substrate or a wire board. Next, a hard 12 () is formed on the substrate 11G. Specifically, the buffer layer 12 is composed of, for example, a metal such as aluminum, copper, molybdenum, titanium, chromium, a button or tungsten or a compound thereof. In the present embodiment, the buffer layer 12 is formed by, for example, forming a metal or a metal compound on the hard substrate 11 by physical vapor deposition (e.g., sputtering) or chemical vapor deposition. In the process of forming the buffer layer 120, the present embodiment can be formed on the hard substrate 11 by adjusting the process conditions of physical vapor deposition or chemical vapor deposition, such as process temperature, reaction gas flow rate, process pressure, and the like. The metal or metal compound has different stress states. In the present embodiment, the buffer layer 120 and the hard substrate 11 are bent in the first bending direction B1 by the process adjustment when the buffer layer 120 is formed. Next, referring to Fig. 1B, the flexible substrate no and the buffer layer 120 are bonded, for example, by bonding the flexible substrate 13 to the buffer layer ι2. Specifically, in this embodiment, the adhesive layer 14 is formed on the buffer layer 12, and the flexible substrate 130 and the buffer layer 12 are bonded by the adhesive layer 140. However, in other embodiments, the adhesive layer 14 is first formed on the flexible substrate 130, and the flexible substrate 13 is bonded to the flexible substrate 13 by the adhesive layer MO to AU0605052 21910twf.doc/n and the buffer layer 120. Among them, the flexible substrate 13 is, for example, a plastic substrate having good flexibility. Next, referring to Fig. 1C, a film forming process 150' is performed on the flexible substrate 13A to form an array structure 16A on the flexible substrate 13A. Generally, the film forming process 150 is, for example, an active device array process, a potential process, or a combination of the foregoing processes. When the film forming process is performed == the moving element array process, the array structure 160 formed on the flexible substrate 130 is an active device array; when the film forming process 15 is performed as a color filter process, The array structure formed on the flexible substrate 130 is a shirt color filter array. On the other hand, when the film forming process 15〇 includes the active device array process and the color filter process, the array structure 160 formed on the flexible substrate 130 is c〇A (c〇1〇rfllter) On Array) array structure or AOC (array on color filter) array structure. In view of the above, the active device array process is, for example, an amorphous germanium thin film transistor array process or a polysilicon thin film transistor array process. In general, when the film forming process 150 is carried out, the temperature of the substrate is often accompanied by a large amount of expansion coefficient, and the film can be significantly changed in temperature during temperature rise and fall. When the film forming process is performed 15 ', the flexure or deformation of the second bending direction B2 is caused by the expansion or contraction of the flexible substrate 13 黏 adhered to the rigid substrate 110, thereby causing exposure or It is a problem of poor coke formation. Accordingly, the present invention is directed to the extent to which the buffer layer 120 is disposed to reduce warpage of the switchable substrate 1 in the twist forming process 150. Specifically, when the thermal expansion coefficient of the buffer layer 12 is between the flexible substrate 130 and the hard substrate 11 , 1343128 AU0605052 2191 Otwf.doc/n, the thermal expansion and contraction of the buffer layer 120 can slow down the flexible substrate 13 The warpage phenomenon generated in the film forming process 150. However, if the thermal expansion coefficient of the buffer layer 12 is less than or equal to the thermal expansion coefficient of the hard substrate 11 , the stress generated when the buffer layer 120 is formed can cancel the thermal expansion and contraction of the flexible substrate 130 in the film forming process 150 . Stress performance. In the embodiment, when the buffer layer 120 is formed, the first bending direction of the buffer layer 120 and the hard substrate 11〇 can be generated by the control of the process conditions, and the second bending direction of the flexible substrate 130 can be warped. B2 is roughly the opposite. As a result, the amount of the flexible substrate 13 which is slightly changed in the first bending direction B2 due to the volume change due to the temperature change can be greatly reduced, and the process yield of the flexible array substrate can be effectively improved. Next, referring to FIG. 1D, after the film forming process 15 is completed, the present embodiment can separate the flexible substrate 130 from the hard substrate no by a treatment such as heating, cooling, or illumination. Specifically, in this embodiment, the adhesion of the adhesive layer 14 is reduced by heating, cooling, or illumination, and then the flexible substrate 130 is removed from the rigid substrate ho. In fact, referring to the top view of the substrate module 1 绘 shown in FIG. 1E , the flexible substrate 130 can be further cut into a plurality of smaller sized panels 132 , for example, the flexible substrate 130 is described. Before the hard substrate no is removed, for example, the flexible substrate 130 may be first cut into a plurality of panels 132, and the flexible substrate 130 may be separated from the hard substrate 11A. Alternatively, after the flexible substrate 13 is separated from the hard substrate 110, the flexible substrate 13 is cut into a plurality of panels 132°, and the method of cutting the flexible substrate 13 is, for example, laser cutting. Or the way of mechanical cutting. 1343128 AU0605052 21910twf.doc/n In summary, in the substrate module of the present invention and the manufacturing method of the flexible array substrate, the stress state formed by depositing the buffer layer on the hard plate by different process conditions Adjusted according to different needs. When the thermal expansion coefficient of the buffer layer is less than or equal to the thermal expansion coefficient of the hard substrate, the stress generated by the buffer layer on the hard substrate and the thermal expansion and contraction of the flexible substrate in the film forming process can be generated by adjusting the process conditions. The stress performance cancels each other out. On the other hand, when the thermal expansion coefficient of the buffer layer is between the flexible substrate and the hard substrate, the flexural image of the flexible substrate caused by the film forming process can be effectively reduced. Therefore, the amount of warpage or deformation of the flexible substrate as the temperature rises or falls can be greatly reduced, the alignment accuracy of the film forming process is improved, and the process yield of the flexible array substrate is also improved. . The present invention has been disclosed in the above embodiments, and it is not intended to limit the invention to those skilled in the art, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 10 is a cross-sectional view showing a manufacturing process of a flexible array substrate according to an embodiment of the present invention. FIG. 1E is a top view of a substrate module according to an embodiment of the present invention. [Main component symbol description] 1 〇〇·substrate module uo: hard substrate 12 1343128 AU0605052 21910twf.doc/n 120 : buffer layer 130 : flexible substrate 132 : panel 140 : adhesive layer 150 : film forming process 160 : array Structure B1: first bending direction B2: second bending direction

Claims (1)

1343128 L —包 十、申請專利範困： ~ 1. 一種可撓性陣列基板的製造方法，包括： 提供一硬質基板； 於該硬質基板上形成一緩衝層，使得該緩衝層以及該 硬質基板產生一第一彎曲方向； 接合一可撓性基板以及該緩衝層；以及 於該可撓性基板上進行一成膜製程，其中進行該成膜 • 製程時’該可撓性基板產生一第二彎曲方向，且該第一彎 曲方向以及該第二彎曲方向係大致相反。 2. 如申請專利範圍第1項所述之可撓性陣列基板的製 造方法’其中該緩衝層之熱膨脹係數小於該硬質基板之熱 膨腸係數。 3. 如申請專利範圍第1項所述之可撓性陣列基板的製 造方法’其中該緩衝層之熱膨脹係數等於該硬質基板之熱 膨脹係數。 4. 如申請專利範圍第1項所述之可撓性陣列基板的製 ，造方法，其中該緩衝層之熱膨脹係數介於該硬質基板之熱 膨騰係與該可撓性基板之熱膨脹係之間。 5. 如申請專利範圍第1項所述之可撓性陣列基板的製 造方法，其中接合該可撓性基板以及該緩衝層之步驟包括： 形成一黏著層於該缓衝層上，以及 藉由該黏著層接合該可撓性基板以及該緩衝層。 6. 如申請專利範圍第1項所述之可撓性陣列基板的製 造方法’其中接合該可撓性基板以及該緩衝層之步驟包括： 14 形成一黏著層於該可撓性基板上；以及 藉由該黏著層接合該可撓性基板以及該緩衝層。 =如Ψ請專魏㈣〗項所叙可撓性陣列基板的製 ’在完賴成膜製減’更包括令該可撓性基板與 该緩街層分離。 如申吻專利範圍第1項所述之可撓性陣列基板的製 ^ ，其中該可撓性基板包括一塑膠基板。 Hi如巾4專利範圍第1項所述之可撓性陣列基板的製 ^ '，其中該硬質基板包括一玻璃基板。 制、土 如申料·圍第1項所述之可撓性陣列基板的 私=万法，其中該成臈製程包括主動元件陣列製程、彩色 濾光片製程或前述製程之組合。 11.如f請專利範圍第1G項所述之可撓㈣列基板的 ^方法，其中該主動元件陣列製程包括非晶碎薄膜電晶 體陣列製程或多轉薄膜電晶體陣列製程。 12·如申請專利範圍第1項所述之可撓性陣列基板的 製造方法’其中該_層之㈣包括金1¾金屬化合物。 、13·如申請專利朗第12項所述之可撓性陣列基板的 製造方法，其中該緩衝層之材質包括铭、鋼、19、鈦、鉻、 组或鶴。 14. 一種可撓性陣列基板的製造方法， 提供一硬質基板； 於該硬質基板上形成-緩衝層，其中該緩衝層之材質 包括金屬或金屬化合物； 1343128 99-9-23 接合一可撓性基板以及該緩衝層，其中該緩衝層之熱 膨脹係數介於該硬質基板之熱膨脹係與該可撓性基板之熱 膨脹係之間；以及 於該可撓性基板上進行一成膜製程。 15.如申請專利範圍第η項所述之可撓性陣列基板的 製造方法，其中接合該可撓性基板以及該緩衝層之步驟包 括：1343128 L — Package 10, Patent Application: 1. A method for manufacturing a flexible array substrate, comprising: providing a rigid substrate; forming a buffer layer on the hard substrate to cause the buffer layer and the hard substrate to be produced a first bending direction; bonding a flexible substrate and the buffer layer; and performing a film forming process on the flexible substrate, wherein the film forming process comprises a second bending of the flexible substrate The direction, and the first bending direction and the second bending direction are substantially opposite. 2. The method of manufacturing a flexible array substrate according to claim 1, wherein the buffer layer has a thermal expansion coefficient smaller than a thermal expansion coefficient of the hard substrate. 3. The method of manufacturing a flexible array substrate according to claim 1, wherein the buffer layer has a coefficient of thermal expansion equal to a coefficient of thermal expansion of the rigid substrate. 4. The method of manufacturing a flexible array substrate according to claim 1, wherein a thermal expansion coefficient of the buffer layer is between a thermal expansion system of the rigid substrate and a thermal expansion system of the flexible substrate. between. 5. The method of manufacturing the flexible array substrate of claim 1, wherein the step of bonding the flexible substrate and the buffer layer comprises: forming an adhesive layer on the buffer layer, and The adhesive layer bonds the flexible substrate and the buffer layer. 6. The method of manufacturing a flexible array substrate according to claim 1, wherein the step of bonding the flexible substrate and the buffer layer comprises: forming an adhesive layer on the flexible substrate; The flexible substrate and the buffer layer are bonded by the adhesive layer. = For example, the manufacturing of the flexible array substrate described in the article (4) refers to the separation of the flexible substrate from the slow-slurry layer. The flexible array substrate according to claim 1, wherein the flexible substrate comprises a plastic substrate. The manufacturing of the flexible array substrate according to the first aspect of the invention, wherein the hard substrate comprises a glass substrate. The invention relates to a flexible array substrate according to the above item 1, wherein the composition process comprises an active device array process, a color filter process or a combination of the foregoing processes. 11. The method of claim 4, wherein the active device array process comprises an amorphous chip dielectric array process or a multi-turn thin film transistor array process. 12. The method of manufacturing a flexible array substrate according to claim 1, wherein the layer (4) comprises a gold compound. The method for manufacturing a flexible array substrate according to claim 12, wherein the material of the buffer layer comprises Ming, steel, 19, titanium, chromium, group or crane. A method of manufacturing a flexible array substrate, comprising: a rigid substrate; forming a buffer layer on the hard substrate, wherein the buffer layer is made of a metal or a metal compound; 1343128 99-9-23 bonding a flexible a substrate and the buffer layer, wherein a thermal expansion coefficient of the buffer layer is between a thermal expansion system of the hard substrate and a thermal expansion system of the flexible substrate; and a film forming process is performed on the flexible substrate. 15. The method of manufacturing a flexible array substrate according to claim n, wherein the step of joining the flexible substrate and the buffer layer comprises: 形成一黏著層於該可撓性基板上；以及 藉由該黏著層接合該可撓性基板以及該緩衝層。 ,I6.如申請專利範圍第14項所述之可撓性陣列基板的 製造方法，在完成該成膜製程後，更包括令該可撓性基板 與該緩衝層分離。 • I7·如申請專利範圍第14項所述之可撓性陣列基板的 製造方法，其中該可撓性基板包括一塑膠基板。Forming an adhesive layer on the flexible substrate; and bonding the flexible substrate and the buffer layer by the adhesive layer. The method of manufacturing a flexible array substrate according to claim 14, wherein after the film forming process is completed, the flexible substrate is further separated from the buffer layer. The method of manufacturing a flexible array substrate according to claim 14, wherein the flexible substrate comprises a plastic substrate. 18.如申請專利範圍第14項所述之可撓性陣列基板的 製造方法，其中該硬質基板包括一玻璃基板。 、19·如申請專利範圍帛14項所述之可撓性陣列基板的 製造方法，其中該成膜製程包括主動元件P車列製程、彩色 渡光片製程或前述製程之組合。 制^請糊範圍第19摘叙可撓㈣列基板的 衣这方法，其中該主動元件陣列製程包括 體陳列製程或多晶石夕薄膜電晶體陣列製程。/…日 制造3 利範圍第14項所述之可撓性陣列基板的 衣 ，、中該緩衝層之材質包括链、鋼、鉬、鈦、鉻、 16 1343128 99-9-23 组或鶴。 22.—種可撓性陣列基板的製造方法，包括： 提供一硬質基板； 於該硬質基板上形成一緩衝層； 藉由一黏著層將一可撓性基板黏著於該緩衝層，其中 該緩衝層之熱膨脹係數介於該硬質基板之熱膨脹係與該可 撓性基板之熱膨脹係之間；以及18. The method of manufacturing a flexible array substrate according to claim 14, wherein the rigid substrate comprises a glass substrate. 19. The method of fabricating a flexible array substrate according to claim 14, wherein the film forming process comprises an active device P train process, a color light beam process, or a combination of the foregoing processes. The method of the invention is to disclose the method of the flexible (four) column substrate, wherein the active device array process comprises a bulk display process or a polycrystalline thin film transistor array process. The invention relates to a garment for a flexible array substrate according to item 14, wherein the material of the buffer layer comprises a chain, steel, molybdenum, titanium, chromium, 16 1343128 99-9-23 group or a crane. 22. A method of fabricating a flexible array substrate, comprising: providing a rigid substrate; forming a buffer layer on the rigid substrate; bonding a flexible substrate to the buffer layer by an adhesive layer, wherein the buffer The thermal expansion coefficient of the layer is between the thermal expansion system of the rigid substrate and the thermal expansion system of the flexible substrate; 於該可撓性基板上進行一成膜製程。 23.如申請專利範圍第22項所述之可撓性陣列基板的 製造方法，其中藉由該黏著層將該可撓性基板黏著於該緩 衡廣之步驟包括： 形成該黏著層於該緩衝層上；以及 藉由該黏者層接合該可撓性基板以及該緩衝層。 24·如申請專利範圍第22項所述之可撓性陣列基板的 製邊方法’其巾藉由姉著層將該可撓縣板黏著於該緩 衡層之步驟包括：A film forming process is performed on the flexible substrate. The method of manufacturing a flexible array substrate according to claim 22, wherein the step of adhering the flexible substrate to the buffer by the adhesive layer comprises: forming the adhesive layer in the buffer And bonding the flexible substrate and the buffer layer by the adhesive layer. The method of manufacturing a flexible array substrate according to claim 22, wherein the step of adhering the flexible plate to the retardation layer by means of the lining layer comprises: 形成該黏著層於該可撓性基板上；以及 藉由該黏著層接合該可撓性基板以及該緩衝層。 .25·如巾請專利範圍第22項所述之可撓⑽列基板的 製法在;^成該成膜製程後，更包括令該可撓性基板 與該緩衝層分離。 =·如申請專利範圍第22項所述之可撓性陣列基板的 製造方法，其中該可撓性基板包括一塑膠基板。 27.如申請專利範圍第22項所述之可撓性陣列基板的 17 1343128 99-9-23 製造方法，其中該硬質基板包括一玻璃基板。 28. 如申請專利範圍第22項所述之可撓性陣列基板的 製造方法’其中該成膜製程包括主動元件陣列製程:彩色 遽光片製程或前述製程之組合。 29. 如申請專利範圍第28項所述之可撓性陣列基板的 製造方法，其中該主動元件陣列製程包括非晶矽薄膜電晶 體陣列製程或多晶矽薄膜電晶體陣列製程。 ' Μ 30. 如申請專利範圍第22項所述之可撓性陣列基板的 製造方法，其中該緩衝層之材質包括金屬或金屬化二物。 31. 如申請專利範圍第3〇項所述之可撓性陣列基板的 製造方法，其中該緩衝層之材質包括铭、銅、鉬、欽、鉻、 组或鶴。 32. —種基板模組，包括： 一硬質基板； 一緩衝層’配置於該硬質基板上； 一黏著層’配置於該緩衝層上；以及 一可撓性基板，藉由該黏著層與該緩衝層接合，其中 該缓衝層之熱膨脹係數介於該硬質基板之熱膨脹係與該可 撓性基板之熱膨脹係之間。 、°Λ 33. 如申請專利範圍第32項所述之基板模組，更包括 一陣列結構，形成於該可撓性基板上。 34♦如申請專利範圍第32項所述之基板模組，其中該 陣列結構包括-主動元件陣列、—彩色濾光片陣上 18 1343128 99-9-23 3/.如申請專利範圍第34項所述之基板模組，其中該 主動元件陣列包括-非㈣薄膜電晶體陣列或—多晶石夕薄 膜電晶體陣列。 36·如申請專利範圍第32項所述之基板模組，其中該 可撓性基板包括一塑膠基板。 37·如申請專概圍第32項所述之基板模組，其中該 硬質基板包括一玻璃基板。 38.如申請專利範圍第32項所述之基板模組，其中該 缓衝層之材質包括金屬或金屬化合物β 39·如申凊專利範圍第38項所述之基板模組，其中該 緩衝層之材質包括鋁、銅、鉬、鈦、鉻、鈕或鶴。 40. —種基板模級，包括： 一硬質基板； 一緩衝層，配置於該硬質基板上，其中該緩衝層之材 質包括金屬或金屬化合物；以及 一可撓性基板，黏著於該緩衝層上，其中該緩衝層之 熱膨脹係數介於該硬質基板之熱膨脹係與該可撓性基板之. 熱膨脹係之間。 41. 如申請專利範圍第40項所述之基板模組，更包括 一陣列結構，形成於該可撓性基板上。 42. 如申清專利範圍第40項所述之基板模組，其中該 陣列結構包括一主動元件陣列、一彩色濾光片陣列或上^ 組合。 43. 如申請專利範圍第40項所述之基板模組，其中該 19 1343128 99-9-23 主動元件陣列包括一非晶矽薄膜電晶體陣列或一多晶矽薄 膜電晶體陣列。 44. 如申請專利範圍第40項所述之基板模組，其中該 可撓性基板包括一塑膠基板。 45. 如申請專利範圍第40項所述之基板模組，其中該 硬質基板包括一玻璃基板。 46. 如申請專利範圍第41項所述之基板模組，其中該 緩衝層之材質包括铭、銅、钥、鈦、鉻、组或鶴。Forming the adhesive layer on the flexible substrate; and bonding the flexible substrate and the buffer layer by the adhesive layer. .25. The method for manufacturing a flexible (10) column substrate according to claim 22 of the patent application, after the film forming process, further comprises separating the flexible substrate from the buffer layer. The method of manufacturing a flexible array substrate according to claim 22, wherein the flexible substrate comprises a plastic substrate. 27. The method of manufacturing a flexible array substrate according to claim 22, wherein the rigid substrate comprises a glass substrate. 28. The method of fabricating a flexible array substrate according to claim 22, wherein the film forming process comprises an active device array process: a color calender process or a combination of the foregoing processes. 29. The method of fabricating a flexible array substrate according to claim 28, wherein the active device array process comprises an amorphous germanium thin film transistor array process or a polysilicon thin film transistor array process. The method of manufacturing the flexible array substrate according to claim 22, wherein the material of the buffer layer comprises a metal or a metallized material. The method for manufacturing a flexible array substrate according to the third aspect of the invention, wherein the material of the buffer layer comprises inscriptions, copper, molybdenum, chrome, chrome, group or crane. 32. A substrate module comprising: a rigid substrate; a buffer layer disposed on the rigid substrate; an adhesive layer disposed on the buffer layer; and a flexible substrate by the adhesive layer The buffer layer is bonded, wherein a thermal expansion coefficient of the buffer layer is between a thermal expansion system of the rigid substrate and a thermal expansion system of the flexible substrate. The substrate module of claim 32, further comprising an array structure formed on the flexible substrate. The substrate module of claim 32, wherein the array structure comprises an active element array, a color filter array, 18 1343128 99-9-23 3/. The substrate module, wherein the active device array comprises a non-(tetra) thin film transistor array or a polycrystalline silicon thin film transistor array. The substrate module of claim 32, wherein the flexible substrate comprises a plastic substrate. 37. The substrate module of claim 32, wherein the rigid substrate comprises a glass substrate. The substrate module of claim 32, wherein the material of the buffer layer comprises a metal or a metal compound, and the substrate module according to claim 38, wherein the buffer layer Materials include aluminum, copper, molybdenum, titanium, chrome, buttons or cranes. 40. A substrate mold stage, comprising: a rigid substrate; a buffer layer disposed on the hard substrate, wherein the buffer layer material comprises a metal or a metal compound; and a flexible substrate adhered to the buffer layer The thermal expansion coefficient of the buffer layer is between the thermal expansion system of the rigid substrate and the thermal expansion system of the flexible substrate. 41. The substrate module of claim 40, further comprising an array structure formed on the flexible substrate. The substrate module of claim 40, wherein the array structure comprises an active device array, a color filter array or a combination. 43. The substrate module of claim 40, wherein the array of active elements comprises an amorphous germanium thin film transistor array or a polycrystalline thin film transistor array. 44. The substrate module of claim 40, wherein the flexible substrate comprises a plastic substrate. The substrate module of claim 40, wherein the rigid substrate comprises a glass substrate. The substrate module of claim 41, wherein the material of the buffer layer comprises Ming, copper, key, titanium, chromium, group or crane. 2020
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