WO2009072585A1 - Process for production of crystalline kln film, process for production of semiconductor device, and semiconductor device - Google Patents

Process for production of crystalline kln film, process for production of semiconductor device, and semiconductor device Download PDF

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Publication number
WO2009072585A1
WO2009072585A1 PCT/JP2008/072099 JP2008072099W WO2009072585A1 WO 2009072585 A1 WO2009072585 A1 WO 2009072585A1 JP 2008072099 W JP2008072099 W JP 2008072099W WO 2009072585 A1 WO2009072585 A1 WO 2009072585A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
kln
semiconductor device
crystalline
production
Prior art date
Application number
PCT/JP2008/072099
Other languages
French (fr)
Japanese (ja)
Inventor
Hidefumi Odaka
Naoto Kihara
Original Assignee
Asahi Glass Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co., Ltd. filed Critical Asahi Glass Co., Ltd.
Priority to JP2009544725A priority Critical patent/JPWO2009072585A1/en
Publication of WO2009072585A1 publication Critical patent/WO2009072585A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5873—Removal of material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H03H9/02039—Characteristics of piezoelectric layers, e.g. cutting angles consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Disclosed are: a novel production process for producing a crystalline KLN film; a novel film structure for process stabilization; and a process for producing a semiconductor device using the crystalline KLN film as a piezoelectric thin film. The process for producing a crystalline KLN film comprises the steps of: forming an amorphous potassium lithium niobate (KLN) film; forming a barrier layer comprising aluminum nitride (AIN) or silicon oxide (SiO2) on the KLN film; and annealing the KLN film having the barrier layer formed thereon.
PCT/JP2008/072099 2007-12-05 2008-12-04 Process for production of crystalline kln film, process for production of semiconductor device, and semiconductor device WO2009072585A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009544725A JPWO2009072585A1 (en) 2007-12-05 2008-12-04 Crystalline KLN film manufacturing method, semiconductor device manufacturing method, and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007314403 2007-12-05
JP2007-314403 2007-12-05

Publications (1)

Publication Number Publication Date
WO2009072585A1 true WO2009072585A1 (en) 2009-06-11

Family

ID=40717763

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072099 WO2009072585A1 (en) 2007-12-05 2008-12-04 Process for production of crystalline kln film, process for production of semiconductor device, and semiconductor device

Country Status (2)

Country Link
JP (1) JPWO2009072585A1 (en)
WO (1) WO2009072585A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044579A (en) * 2009-08-21 2011-03-03 Murata Mfg Co Ltd Piezoelectric thin film element and method of manufacturing the same
WO2011158636A1 (en) * 2010-06-15 2011-12-22 日本碍子株式会社 Composite substrate
JP2015046545A (en) * 2013-08-29 2015-03-12 日立金属株式会社 Piezoelectric thin film element, method for manufacturing the same and electronic device using piezoelectric thin film element
JP2015065398A (en) * 2013-08-29 2015-04-09 日立金属株式会社 Method for manufacturing niobate-based ferroelectric thin film device
JP2015153850A (en) * 2014-02-13 2015-08-24 株式会社サイオクス Piezoelectric material thin film element, manufacturing method thereof, and electronic device with piezoelectric material thin film element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151658A (en) * 2000-11-09 2002-05-24 Toshiba Microelectronics Corp Semiconductor memory and manufacturing method therefor
JP2002244168A (en) * 2001-02-21 2002-08-28 Fuji Xerox Co Ltd Method of designing optical switch and optical switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151658A (en) * 2000-11-09 2002-05-24 Toshiba Microelectronics Corp Semiconductor memory and manufacturing method therefor
JP2002244168A (en) * 2001-02-21 2002-08-28 Fuji Xerox Co Ltd Method of designing optical switch and optical switch

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044579A (en) * 2009-08-21 2011-03-03 Murata Mfg Co Ltd Piezoelectric thin film element and method of manufacturing the same
WO2011158636A1 (en) * 2010-06-15 2011-12-22 日本碍子株式会社 Composite substrate
JP2015046545A (en) * 2013-08-29 2015-03-12 日立金属株式会社 Piezoelectric thin film element, method for manufacturing the same and electronic device using piezoelectric thin film element
CN104425703A (en) * 2013-08-29 2015-03-18 日立金属株式会社 Piezoelectric film element, method of manufacturing piezoelectric film element, and electronic device using piezoelectric film element
JP2015065398A (en) * 2013-08-29 2015-04-09 日立金属株式会社 Method for manufacturing niobate-based ferroelectric thin film device
JP2015153850A (en) * 2014-02-13 2015-08-24 株式会社サイオクス Piezoelectric material thin film element, manufacturing method thereof, and electronic device with piezoelectric material thin film element

Also Published As

Publication number Publication date
JPWO2009072585A1 (en) 2011-04-28

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