TWI327175B - - Google Patents

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Publication number
TWI327175B
TWI327175B TW095105911A TW95105911A TWI327175B TW I327175 B TWI327175 B TW I327175B TW 095105911 A TW095105911 A TW 095105911A TW 95105911 A TW95105911 A TW 95105911A TW I327175 B TWI327175 B TW I327175B
Authority
TW
Taiwan
Prior art keywords
mask
substrate
magnet
film
magnetic force
Prior art date
Application number
TW095105911A
Other languages
English (en)
Chinese (zh)
Other versions
TW200637930A (en
Inventor
Tatsuya Kataoka
Kenji Nagao
Kenichi Saito
Original Assignee
Mitsui Shipbuilding Eng
Choshu Industry Company Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Shipbuilding Eng, Choshu Industry Company Ltd filed Critical Mitsui Shipbuilding Eng
Publication of TW200637930A publication Critical patent/TW200637930A/zh
Application granted granted Critical
Publication of TWI327175B publication Critical patent/TWI327175B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW095105911A 2005-03-24 2006-02-22 Film forming device, film forming method, and method of producing organic el element TW200637930A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005086687A JP4609759B2 (ja) 2005-03-24 2005-03-24 成膜装置

Publications (2)

Publication Number Publication Date
TW200637930A TW200637930A (en) 2006-11-01
TWI327175B true TWI327175B (ja) 2010-07-11

Family

ID=37023545

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105911A TW200637930A (en) 2005-03-24 2006-02-22 Film forming device, film forming method, and method of producing organic el element

Country Status (5)

Country Link
JP (1) JP4609759B2 (ja)
KR (1) KR100925362B1 (ja)
CN (2) CN103820755A (ja)
TW (1) TW200637930A (ja)
WO (1) WO2006100867A1 (ja)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009084623A1 (ja) * 2007-12-27 2009-07-09 Canon Anelva Corporation 処理装置、並びに電子放出素子及び有機ｅｌディスプレイの生産方法
KR101107181B1 (ko) * 2010-01-04 2012-01-25 삼성모바일디스플레이주식회사 마스크 흡착용 자석 조립체
KR101084185B1 (ko) 2010-01-12 2011-11-17 삼성모바일디스플레이주식회사 패턴 형성 방법 및 유기 발광 소자의 제조방법
TWI475736B (zh) * 2011-07-26 2015-03-01 Innolux Corp 電激發光顯示裝置的製作方法以及鍍膜機台
KR101203171B1 (ko) 2012-05-22 2012-11-21 주식회사 아이.엠.텍 글래스 기판 합착을 위한 얼라인 장치
KR101951029B1 (ko) * 2012-06-13 2019-04-26 삼성디스플레이 주식회사 증착용 마스크 및 이를 이용한 유기 발광 표시장치의 제조방법
KR102000718B1 (ko) * 2012-11-15 2019-07-19 삼성디스플레이 주식회사 박막 증착용 마스크 조립체 및 이의 제조 방법
KR102081282B1 (ko) * 2013-05-27 2020-02-26 삼성디스플레이 주식회사 증착용 기판이동부, 이를 포함하는 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조방법 및 유기발광 디스플레이 장치
KR102270080B1 (ko) * 2013-10-30 2021-06-29 삼성디스플레이 주식회사 박막 증착 장치
KR102273050B1 (ko) 2014-09-17 2021-07-06 삼성디스플레이 주식회사 증착용 마스크 어셈블를 포함하는 증착 장치 및 증착 방법
KR102250047B1 (ko) 2014-10-31 2021-05-11 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 유기 발광 표시 장치의 제조 방법
KR102280269B1 (ko) 2014-11-05 2021-07-22 삼성디스플레이 주식회사 마스크 프레임 조립체 및 그 제조 방법
JP6163586B2 (ja) * 2015-04-17 2017-07-12 大日本印刷株式会社 蒸着パターンの形成方法、押さえ板一体型の押し込み部材、蒸着装置及び有機半導体素子の製造方法
KR102404576B1 (ko) 2015-04-24 2022-06-03 삼성디스플레이 주식회사 마스크 프레임 조립체, 그 제조 방법 및 표시 장치의 제조 방법
JP6298138B2 (ja) * 2015-11-25 2018-03-20 キヤノントッキ株式会社 成膜システム、磁性体部及び膜の製造方法
CN105428552B (zh) * 2015-12-31 2017-06-09 昆山国显光电有限公司 Oled器件发光层形成方法
CN105568224B (zh) * 2016-01-28 2018-09-21 京东方科技集团股份有限公司 蒸镀用遮挡装置以及蒸镀设备
KR102505877B1 (ko) 2016-01-29 2023-03-06 삼성디스플레이 주식회사 마스크 프레임 조립체 및 이를 이용한 디스플레이 장치의 제조방법
JP6662102B2 (ja) * 2016-02-29 2020-03-11 富士ゼロックス株式会社 光学装置の製造方法、基板装置、光学装置及び光学装置の製造装置
US20190292653A1 (en) * 2016-05-18 2019-09-26 Stefan Bangert Apparatus and method for transportation of a deposition source
CN106048536A (zh) * 2016-06-06 2016-10-26 京东方科技集团股份有限公司 一种蒸镀装置及待蒸镀基板加工方法
JP6309048B2 (ja) * 2016-07-01 2018-04-11 キヤノントッキ株式会社 マスク吸着装置
KR102544244B1 (ko) 2016-07-19 2023-06-19 삼성디스플레이 주식회사 마스크 프레임 조립체
CN106399936B (zh) * 2016-12-09 2018-12-21 京东方科技集团股份有限公司 一种蒸镀设备及蒸镀方法
CN106978585A (zh) * 2017-04-25 2017-07-25 昆山国显光电有限公司 固定装置以及蒸镀装置
CN107686960B (zh) * 2017-07-25 2019-12-17 武汉华星光电半导体显示技术有限公司 一种成膜装置
KR101952521B1 (ko) * 2017-10-31 2019-02-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
KR101993532B1 (ko) * 2017-11-29 2019-06-26 캐논 톡키 가부시키가이샤 성막장치, 성막방법, 및 전자 디바이스 제조방법
KR101953038B1 (ko) * 2017-12-13 2019-02-27 캐논 톡키 가부시키가이샤 정전척 장치, 마스크 부착장치, 성막장치, 성막방법, 및 전자 디바이스의 제조 방법
JP7188973B2 (ja) * 2018-10-15 2022-12-13 キヤノントッキ株式会社 成膜装置、製造システム、有機ｅｌパネルの製造システム、成膜方法、及び有機ｅｌ素子の製造方法
JP7118864B2 (ja) * 2018-11-07 2022-08-16 キヤノントッキ株式会社 成膜装置、製造システム、有機ｅｌパネルの製造システム
KR20200104969A (ko) * 2019-02-27 2020-09-07 캐논 톡키 가부시키가이샤 얼라인먼트 장치, 성막 장치, 얼라인먼트 방법, 성막 방법, 및 전자 디바이스 제조방법
CN109837509B (zh) * 2019-04-04 2024-03-01 江苏集萃有机光电技术研究所有限公司 一种基片样品架、镀膜设备及控制方法
JP7420496B2 (ja) * 2019-07-05 2024-01-23 キヤノントッキ株式会社 マスク保持機構、蒸着装置、および電子デバイスの製造装置
KR20210081700A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용하여 전자 디바이스를 제조하는 방법
KR20200005516A (ko) * 2019-12-26 2020-01-15 엘지전자 주식회사 발광 소자를 이용한 디스플레이의 제조 장치 및 그 제조 방법
KR102464025B1 (ko) * 2021-02-03 2022-11-07 파인원 주식회사 마그넷 플레이트 조립체
CN116083856A (zh) * 2023-01-07 2023-05-09 唐山斯腾光电科技有限公司 一种红外窗片加工用蒸发镀膜装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3516346B2 (ja) * 1992-09-08 2004-04-05 大日本印刷株式会社 スパッタ用治具
JP3539125B2 (ja) * 1996-04-18 2004-07-07 東レ株式会社 有機電界発光素子の製造方法
JP2001049422A (ja) * 1999-08-09 2001-02-20 Hitachi Ltd メタルマスクの基板への保持固定構造、保持固定治具、その補助具、及びトレイ
JP3879093B2 (ja) * 2000-07-13 2007-02-07 独立行政法人科学技術振興機構 コンビナトリアルデバイス作製装置
JP2002075638A (ja) * 2000-08-29 2002-03-15 Nec Corp マスク蒸着方法及び蒸着装置
KR100422487B1 (ko) * 2001-12-10 2004-03-11 에이엔 에스 주식회사 전자석을 이용한 유기전계발광소자 제작용 증착장치 및그를 이용한 증착방법
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2005187874A (ja) * 2003-12-25 2005-07-14 Seiko Epson Corp 蒸着装置、蒸着方法、有機ｅｌ装置、および電子機器

Also Published As

Publication number Publication date
CN103820755A (zh) 2014-05-28
WO2006100867A1 (ja) 2006-09-28
JP4609759B2 (ja) 2011-01-12
CN101090995A (zh) 2007-12-19
TW200637930A (en) 2006-11-01
KR100925362B1 (ko) 2009-11-09
JP2006265650A (ja) 2006-10-05
KR20070090018A (ko) 2007-09-04

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