1314957, 九、發明說明： 【發明所屬之技術領域】 本發明係與金屬薄膜成形有關，特別是關於一種流體控制裝 置。可於基板表面及基板之通孔内壁成形差異性均句厚度之金屬 薄膜的金屬薄膜成形裝置。 【先前技術】 隨著電子裝置的發展，印刷電路板的製造也逐漸朝向高密度 封裝的型態’使表面成形的金屬線路的線寬更細、其表面供電$ 元件針腳穿軌的孔徑也逐_小。因騎路板上成形 的金屬薄膜之厚度均勻度的要求也更高，金屬薄膜缺陷也必須降 低至最少，以提升金屬_的延紐及抗拉強度，避免因為線路 變細，而導致強度不足斷裂的現象。 為了改善金射猶厚度均皱關題，日本專利JP鄕8999 號專利案提出—方式進行麵_触置，以使鑛液均 勻的分佈在基板絲，贿金屬金卿厚度更為均勻。美國 專利獅薦號專利案則利用週期性振動源，使基板振動，帶 動鐘液於基板表面進行魏，錢錢_厚度更為均勻。铁而 2二種方法僅缺善基板表面的金屬錢_厚度，對於基板 例，抱娜蝴姆》逆比 效濕潤這些通孔，特別是通孔的孔徑縮小而縱^担古-士 士 問題會變得更’而造成通孔_的金屬軸成形=極f 6 1314957 的良率:因此如何針對縱横比高的小孔徑通 【發明内容】U的金屬賴技術，成為—項重要的技術課題。 成形二詈，上!^問題/本發明的主要目的在於提供—種金屬薄膜 與‘内辟聽膜底，羞板表面 ^專膜厚度不均一的問題。。 為達成上述目的明提供一種金屬薄膜成形裝置，用以 ，-具備至少i孔之Μ上成形金屬薄膜，其包含有—密閉腔 至—⑤力產生裝置及-壓力控㈣置。其巾基板伽定於密閉 腔至中’使基板將細腔室分隔為二部分。而壓力產生裝置及壓 力控制裝置，係連接於额腔室，分獅應基板的二側，其中塵 力產生裝置係職導人-舰，使其平行於基板表面流動，而壓 力控制H侧以導出鍍液，並控制該基板二側之壓力差，藉以 錄液可由壓力產生裝置帶動進人_腔室中，造成平行於基板之 表面的鑛液流動，以及通過通孔的鑛液流動。透過壓力控制裝置 的調節，於基板表面及通孔内壁成形之金屬薄膜厚度可分別加以 控制。 另一具體特徵，本發明更可具備一鍍液穩定裝置，用以攪拌 進入密閉腔室的鍍液，使鍍液中的溶質與溶劑更均勻地混合，使 其成分更均勻。 另一具體特徵，本發明更可設置一溫度控制裝置，用以控制 進入搶閉腔室的艘液溫度，以控制金屬薄膜成形條件。 1314957 另一具體特徵，本發明更可設置一層流穩定裝置，用以消除 進入密閉腔室的流體之邊界層，使鍍液於基板表面流動的速率更 力一具體特徵，本發明更可設置一速度控制元件，至於密閉 腔室中，藉由調整速度控制元件與基板表面的間距，以調整於基 板表面流動的流體速度。 土 另/、體特徵，本發明更包含有一電場控制裝置，具有二電 極’此二電極浸泡於密閉腔室的鑛液中，並位於基板的二侧，用 以產生-贼’使基板位於電場中，藉以加強金屬薄膜成形效果。 —乂下在s施方式+詳細敘述本剌之詳細槪以及優點，其 内谷足以使任何熟f_技藝者了解本發明之技術内容並據 施’錄據本說明書所揭露之内容、申請專利範圍及圖式， 齡相關技藝者可輕祕理解本發明_之目的及優點。 =上之關於本發日⑽容之朗及町之實施方式之 本發明之魏，並且提供本料之專财請範固: 【實施方式】 為使對本發明的目的、槿 解，兹配合f施·細說邮下。η、及其魏有進一步的瞭 請參閱「第1圖」所示 成形設備，其包钟框架1、輪^罐本發明所建立之金屬薄臈 c、d、e、f、g、h、i，輪送Ί、、’先2及複數個鑛液槽Α、Β、 ,、系統2係架設於框架1上方，用以 8 1314957 移動待加工之基板於各舰槽A、B、c、D ' £、F、G 移動。各錢液槽A、B、c、X)、P、u p 序、金屬薄膜成形製程，其中表面處理程二:：:= 形成基底薄膜之後’再將催化劑亦= 圖案^佈於基板表面，再進人金㈣膜成形餘 積於催化劑所塗佈的區域，而形成預定圖案型態的金屬薄膜屬本。 發明之金屬賴成職置射應用於各舰針，紅使 或是去離子水均勾地流過基板表面，以控制金屬薄膜成 參閱「第2圖」、「第3圖」至「第4圖」所示，係為杯明 第一實施制提供之金㈣膜成縣置，係可應胁前述之往 何一鐘液槽，各鍍賴可構成—賴贿10，而待加工之基板20 係固定於此-細腔室附，並將此—密馳室顧_二部 分’此外各紐20上設有概舰孔21，係可供流體通過而流 通於基板20的二側。 密閉腔室10内更設有—流體導人元件u及―流體導出元件 ⑵流體導人元件n係呈現轉縣，其畴財流通管路出， 可透過導管連壓力產生㈣3卜以將鍍_去離子水引入 T管路中，而透過位於流體導入元件11内側緣之開孔112流入 挽閉腔室10内。流體導出树U大致與流體導出树η相同， 呈_架型態，其内部具有流通管路121，_緣形成複數個開 孔122 ’用以吸入於密閉腔室1〇内的鍍液，而經由一連接於流體 1314957 導出兀件12之麗力控制單元32流出密閉腔室ι〇外。流體導入元 件11及流體導出元件12係平行地設於基板2〇的二側，藉以使麼 力產生衣置31捕力控制|置32連接於密驗室，同時對應 於基板20之二側。 流體導入元⑧及流體導出元件12係平行地設於基板2〇的 二側，使其等内側的開孔112、122指向與基板2〇表面平行，因 此不响疋由流體導人7L件11進人密閉腔室1G内的流體，或是被 流體導出元件12吸出的流體（觀或去料水），都可以平行於 基板20表面的方向流動，並以垂直基板2〇的方向通過通孔2工流 動[力產生叙置31可為-流體果浦，而廢力控制裝置％可 Γ4Η ^ -流體流壤’使乎行·板20表面流動的流幾速度41 鱗_楚流體速度42.相同，使得與基板2〇表面及通孔21内 壁的金屬薄膜條件相近’以使於基板20表面或通孔21内壁成形 的金屬薄膜成錢率相同’使金屬薄膜厚朗句，使導電或是應 ^特性較為如’不會出現太·差異。而基板2味面預先簡 某（Catalyst)成形預定的圖案’當基板2〇浸泡於鏡液時，鑛液 成分可與觸媒騎離子或f子交換，使金屬析出成型 又 成圖案。 ^ ^ 八f再荟閱「第5圖」所示’係為本發明第二實施例所提供之 金屬薄膜成形裝置。於本實施例中，壓力產生裝置31與密閉腔室 10之間’更設有-鍵液穩定裳置’魏穩定裝置主要係用以授^ 1314957 鍍液，藉以使鐘液中的溶質與溶劑更為均勻地混合，讓錢液品質 '更=穩定。此一鍍液穩定裝置係為-磁石授拌裳置Μ，於鍍液進 :入密_室ίο之前就將條加崎拌，使麟特性更為穩定。 _ 再㈣「第6圖」及「第7圖」所示，驗穩定裝置亦可為 .一氣體㈣，將氣體通人舰中，藉由微小氣泡觀液產生麟 .效^，氣體可於舰進人密_室1G之前通人，預先贿液加以 穩定，如「第6圖」所示。亦可將氣體源52連接於流體導入元件 Μ而直接將氣體通人密閉腔室财，以直接於_腔室财對 鍍液進行攪拌穩定作業，如「第7圖」所示。 請再參閱「第8圖」所示，係為本發明第三實施例所提供之 一種所提供之金屬薄膜成形裝置。為有效控做液條件，於本實 施例中’於壓力產生裝置31與壓力控制裝置32之間，設有一^ 度控制裝置53及-層流穩定裝置54，藉以在_由壓力產生^ 置3!驅動進入密閉腔室1〇之前，調整鏟液的狀態，以使鐘液更 孀藝能均勻地流過基板20表面。 其中’溫度控制裝置53主要係由加熱器所組成，用以控做 液的溫度，使鑛液進入密閉腔室1〇之前，達到最佳化的反應温 度’以提升金屬薄膜成形速率。而層流穩定裳置S4係由疏孔性介 -質（P_SMediUm)所組成，由於鍍液在管路中流騎使流體邊 界層（boundary layer)的厚度逐漸提升，導致鍍液到達基板2〇表 面時的流速產生不均勻現象，若在鑛液進入密閉腔室1〇之前，先 •讓其流過層流穩定裝置，可以破壞層流現象，使邊界層重新成長， 11 1314957 如此-來，鐘液進入密閉腔室]G時，流速的分佈就為變得較為均 勻’以使金屬薄職長速率更為均自，而使得厚度更為均一。 此外’於本實_中，更設有一速度控制元件55，此一速度 控制元件55係為，體，設基板2()的—侧，藉由調整速度 控制几件55與紐2G蝴咖w，可叫變流經基板如表 面的鑛液速度，藉以對鑛液的流速進行進—步的調整。1314957, IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to metal film forming, and more particularly to a fluid control device. A metal thin film forming apparatus for forming a metal thin film having a uniform uniform thickness on the surface of the substrate and the inner wall of the through hole of the substrate. [Prior Art] With the development of electronic devices, the manufacture of printed circuit boards has gradually moved toward the form of high-density packages. The line width of the surface-formed metal lines is finer, and the surface of the printed circuit is supplied with the aperture of the component pins. _small. Due to the higher uniformity of the thickness of the metal film formed on the board, the defects of the metal film must also be minimized to enhance the extension and tensile strength of the metal to avoid the lack of strength due to the thinning of the line. The phenomenon of breakage. In order to improve the thickness of the gold shot, the Japanese patent JP 鄕8999 proposes a method of surface-touching so that the mineral liquid is evenly distributed on the substrate filament, and the thickness of the bribe metal is more uniform. The US patented lion recommended patent case uses a periodic vibration source to vibrate the substrate and drive the clock solution on the surface of the substrate to make it more uniform. Iron and 2 methods only lack the metal money _ thickness of the substrate surface, for the substrate example, the holding of the hole, the effect of the through hole, especially the hole diameter of the through hole is narrowed It will become more 'and the metal shaft forming of the through hole_=the yield of the pole f 6 1314957: therefore, how to target the small aperture with a high aspect ratio [invention] U's metal Lai technology becomes an important technical subject . The problem is that the metal film is not uniform with the thickness of the surface of the board. . In order to achieve the above object, there is provided a metal film forming apparatus for forming an underlying metal film having at least an i-hole, comprising a --cavity chamber to a -5 force generating device and a pressure control (four). The towel substrate is condensed in the closed cavity to the middle to separate the thin chamber into two parts. The pressure generating device and the pressure control device are connected to the front chamber, and are divided into two sides of the substrate, wherein the dust generating device is a guide-ship, so that it flows parallel to the surface of the substrate, and the pressure control H side The plating solution is derivatized and the pressure difference on both sides of the substrate is controlled, whereby the recording liquid can be driven into the chamber by the pressure generating device, causing the flow of the ore parallel to the surface of the substrate and the flow of the ore through the through hole. Through the adjustment of the pressure control device, the thickness of the metal film formed on the surface of the substrate and the inner wall of the through hole can be separately controlled. According to another specific feature, the present invention further provides a plating solution stabilizing device for stirring the plating solution entering the sealed chamber to more uniformly mix the solute and the solvent in the plating solution to make the composition more uniform. In another specific feature, the present invention further provides a temperature control device for controlling the temperature of the liquid entering the cloaking chamber to control the forming condition of the metal film. Another specific feature of the present invention is that the present invention can further provide a flow stabilizing device for eliminating the boundary layer of the fluid entering the sealed chamber, so that the rate of the plating liquid flowing on the surface of the substrate is more specific, and the present invention can further set a The speed control element, in the closed chamber, adjusts the velocity of the fluid flowing on the surface of the substrate by adjusting the distance between the speed control element and the surface of the substrate. The invention further comprises an electric field control device having two electrodes 'the two electrodes are immersed in the mineral liquid of the closed chamber and located on two sides of the substrate for generating a thief' to place the substrate at the electric field In order to enhance the forming effect of the metal film. - The details of the 槪 方式 + 详细 详细 详细 详细 详细 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + Scope and schema, the age-related artisan can understand the purpose and advantages of the present invention. The above-mentioned Wei of the present invention on the basis of the implementation of the present invention (10), and the provision of the special wealth of the present invention: [Embodiment] For the purpose of the present invention, it is understood that Shi·detailed the post. η, and its Wei have further see the forming equipment shown in "1", the bell-shaped frame 1, the wheel cans, the thin metal c, d, e, f, g, h, i, the wheel Ί, the 'first 2' and the plurality of mineral tanks Α, Β, , , system 2 are erected above the frame 1 for 8 1314957 to move the substrate to be processed in each of the ships A, B, c, D ' £, F, G move. Each of the liquid tanks A, B, c, X), P, up, metal film forming process, wherein the surface treatment process 2::: = after forming the base film, and then the catalyst is also patterned on the surface of the substrate, and then Into the gold (four) film formation, the film is deposited in the area coated by the catalyst, and the metal film forming the predetermined pattern form belongs to the present invention. The invention of the metal Lai Cheng is used for each ship's needle, and the red or deionized water flows through the surface of the substrate to control the metal film into "2nd picture", "3rd picture" to "4th. As shown in the figure, the gold (4) film provided by the first implementation system of the Cup Ming is placed in the county, and it can be threatened by the above-mentioned one to the tank. Each plate can constitute a board, and the substrate to be processed The 20-series is fixed to this-fine chamber attachment, and this----------------------------------------------------------------------------------------------------------------------------------- The closed chamber 10 is further provided with a fluid guiding element u and a fluid guiding element (2), and the fluid guiding element n is presented in the county, and the domain financial flow line is out, which can be generated through the pressure of the conduit (4) 3 to be plated _ Deionized water is introduced into the T-line and flows into the escaping chamber 10 through the opening 112 at the inner edge of the fluid introduction member 11. The fluid derivation tree U is substantially the same as the fluid derivation tree η, and has a _-frame type with a flow line 121 inside, and the _ edge forms a plurality of openings 122' for inhaling the plating solution in the closed chamber 1 ,, and The Lili control unit 32 that exits the element 12 via the fluid 1314957 exits the sealed chamber. The fluid introduction member 11 and the fluid discharge member 12 are disposed in parallel on both sides of the substrate 2, whereby the force generating device 31 is controlled to be connected to the chamber while corresponding to both sides of the substrate 20. The fluid introduction element 8 and the fluid discharge element 12 are disposed in parallel on both sides of the substrate 2, such that the inner openings 112, 122 are directed parallel to the surface of the substrate 2, so that the fluid is not guided by the fluid 11L 11 The fluid entering the sealed chamber 1G or the fluid (observed or dewatered) sucked by the fluid discharge member 12 can flow in a direction parallel to the surface of the substrate 20 and pass through the through hole in the direction of the vertical substrate 2〇. 2 work flow [force generation set 31 can be - fluid fruit pump, and waste force control device% can be 4 Η ^ - fluid flow soil" to make the flow of the surface of the plate 20 a few speeds 41 scales _ Chu fluid speed 42. Similarly, the conditions of the metal film on the surface of the substrate 2 and the inner wall of the through hole 21 are similar to each other so that the metal film formed on the surface of the substrate 20 or the inner wall of the through hole 21 has the same profit rate, so that the metal film is thick and made conductive or Should be ^ characteristics like 'do not appear too different. On the other hand, when the substrate 2 is immersed in the mirror liquid, the mineral liquid component can be exchanged with the catalyst ion or f, and the metal is precipitated and patterned. ^ ^ 八F Further reading "Fig. 5" is a metal film forming apparatus provided in the second embodiment of the present invention. In the present embodiment, the pressure generating device 31 and the closed chamber 10 are further provided with a key-stabilizing device, and the Wei stabilizer device is mainly used to impart a 1314957 plating solution, so that the solute and the solvent in the clock solution are used. Mix more evenly, so that the quality of the liquid is 'more = stable. The one-plate stabilization device is a magnet-supporting shovel, and the slag is mixed before the plating solution is introduced into the _ chamber ίο, so that the lining property is more stable. _ (4) "Figure 6" and "Figure 7", the stability device can also be a gas (4), which passes through the gas, and the gas is generated by the microbubble. The ship entered the secret _ room 1G before the pass, the pre-bribery liquid to stabilize, as shown in "Figure 6." The gas source 52 can also be connected to the fluid introduction element Μ to directly pass the gas to the sealed chamber, and the stirring solution can be stabilized directly to the plating solution, as shown in Fig. 7. Referring to Fig. 8 again, there is provided a metal film forming apparatus provided in accordance with a third embodiment of the present invention. In order to effectively control the liquid working conditions, in the present embodiment, between the pressure generating device 31 and the pressure control device 32, a control device 53 and a laminar flow stabilizing device 54 are provided, whereby the pressure is generated by the pressure generating device 3 Before the drive enters the closed chamber, the state of the shovell is adjusted so that the clock liquid can flow evenly across the surface of the substrate 20. The 'temperature control device 53' is mainly composed of a heater for controlling the temperature of the liquid to achieve an optimized reaction temperature before the ore enters the closed chamber to increase the forming rate of the metal film. The laminar flow stable S4 system consists of the porous pore mediator (P_SMediUm). The thickness of the boundary layer is gradually increased due to the flow of the plating solution in the pipeline, causing the plating solution to reach the surface of the substrate 2 The flow rate is uneven. If the mineral liquid enters the closed chamber, first, let it flow through the laminar flow stabilization device, which can destroy the laminar flow phenomenon and make the boundary layer grow again. 11 1314957 So - come, the bell liquid enters When the chamber is closed, the flow velocity is distributed more uniformly, so that the metal thinness is more uniform and the thickness is more uniform. In addition, in the present embodiment, a speed control component 55 is further provided, and the speed control component 55 is a body, and the side of the substrate 2 () is provided, and a plurality of 55s and a button are controlled by adjusting the speed. It can be called the speed of the ore liquid flowing through the substrate such as the surface, so that the flow rate of the ore liquid can be adjusted step by step.
請再參閱「第9圖」所示，為本發明第四實施例所提供之一 薄膜成形裝置之示意圖。為了進—步對金屬薄膜成形程 序的控制，加強金屬_成形效果，於本實施财設有一電場控 制裝置56，用以產生—交流電錢―直流電，電場控繼置％ 具有二電極56丨’設於密閉腔室财，使其等被浸泡於鑛液中， 且係位於基板2〇的二側。藉由通入一直流電或是一交流電，可以 使基板顧於-電場巾，細加屬_成形效果。 雖然本發明以前述之實_揭露如上，料並非用以限 =。在不麟本發明之精神和範_，所為之更動與潤舞 私發明之專梅祕圍。_本發騎做之紐細請來考 所附之申請專利範圍。 少’ 圖式簡單說明】 ^圖為依據本發明所建立之金屬薄膜成形設備； 第2圖為本發明第一實施例之分解立體圖； 苐3圖為弟一實施例之剖面示意圖； 第4圖為第一實施例之系統方塊圖； 12 1314957 第5圖為第二實施例之系統方塊圖； 第6圖為第二實施例之系統方塊圖，係為另一實施態樣； 第7圖為第二實施例之系統方塊圖，係為又一實施態樣； 第8圖為第三實施例之系統方塊圖；及 第9圖為第四實施例之系統方塊圖。 【主要元件符號說明】 1 框架 2 輸送系統 A、B、C、D、E、F、G、H、I 鍛液槽 10 密閉腔室 11 流體導入元件 111 流通管路 112 開孔 12 流體導出元件 121 流通管路 122 開孔 20 基板 21 通孔 31 壓力產生裝置 32 壓力控制單元 41 流體速度 42 流體速度 13 1314957Referring to Fig. 9 again, a schematic view of a film forming apparatus according to a fourth embodiment of the present invention is shown. In order to further control the metal film forming process and strengthen the metal forming effect, an electric field control device 56 is provided in the present embodiment for generating - alternating current money - direct current, and the electric field control relay has a second electrode 56 丨 ' In the closed chamber, it is immersed in the mineral liquid and is located on both sides of the substrate 2〇. By using a continuous current or an alternating current, the substrate can be made into a thin electric field, and the forming effect can be finely added. Although the present invention has been described above in the light of the foregoing, it is not intended to be limited to. In the spirit and scope of the invention, it is the secret of the special beauty of the invention. _ This is a new application for the ride. Please attach the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is an exploded perspective view of a first embodiment of the present invention; FIG. 3 is a cross-sectional view of an embodiment of the present invention; FIG. The system block diagram of the first embodiment; 12 1314957 FIG. 5 is a system block diagram of the second embodiment; FIG. 6 is a system block diagram of the second embodiment, which is another embodiment; The system block diagram of the second embodiment is another embodiment; FIG. 8 is a system block diagram of the third embodiment; and FIG. 9 is a system block diagram of the fourth embodiment. [Main component symbol description] 1 Frame 2 Conveying system A, B, C, D, E, F, G, H, I Forging tank 10 Closed chamber 11 Fluid introduction element 111 Flow line 112 Opening 12 Fluid discharge element 121 Circulation line 122 Opening 20 Substrate 21 Through hole 31 Pressure generating device 32 Pressure control unit 41 Fluid velocity 42 Fluid velocity 13 1314957
51 52 53 54 55 56 561 W 磁石擾摔裝置 氣體源 溫度控制裝置 層流穩定裝置 速度控制元件 電場控制裝置 電極 間距51 52 53 54 55 56 561 W Magnet Spoiler Gas source Temperature control device Laminar flow stabilizer Speed control element Electric field control device Electrode spacing
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