CN107385486A - The method of pulse plating gold and the gold plate of formation - Google Patents

The method of pulse plating gold and the gold plate of formation Download PDF

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Publication number
CN107385486A
CN107385486A CN201610321817.8A CN201610321817A CN107385486A CN 107385486 A CN107385486 A CN 107385486A CN 201610321817 A CN201610321817 A CN 201610321817A CN 107385486 A CN107385486 A CN 107385486A
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China
Prior art keywords
gold
current
electroplating
plating
pulse
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CN201610321817.8A
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Chinese (zh)
Inventor
朱效立
谢常青
华磊
华一磊
李海亮
刘明
施百龄
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to CN201610321817.8A priority Critical patent/CN107385486A/en
Publication of CN107385486A publication Critical patent/CN107385486A/en
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/48—Electroplating: Baths therefor from solutions of gold

Abstract

The present invention provides a kind of method of pulse plating gold and the gold plate of formation.Methods described includes：Using sulfurous acid gold salt solution as electroplate liquid；Using the titanium net of gold,platinized as anode；The substrate for having gold seeds layer using preparing has on the substrate of gold seeds layer formed with plating area image as negative electrode, the preparation；Apply electroplating current between the anode and the negative electrode to be electroplated, gold thin film layer is formed in the plating area of the negative electrode, each pulse period of the electroplating current is made up of direct impulse electroplating current and reverse direct current etching electric current two parts, trigger the growth of Jin Jing's grain in the plating area by direct impulse electroplating current, the sharp keen gold nanocrystals kernel structure formed in the corrasion elimination electroplating process of electric current is etched using reverse direct current.The invention enables the gold plate surface of formation is smooth, plated layer compact degree is high.

Description

The method of pulse plating gold and the gold plate of formation
Technical field
The present invention relates to technical field of nano-processing, more particularly to a kind of method of pulse plating gold and formation Gold plate.
Background technology
Plating technology for gold is a kind of traditional diamond-making technique for preparing preferable gold thin film material, prepared gold thin film With excellent conductance property and strong resistance to corrosion, and possess outstanding electricity, chemistry and optical characteristics, Have become the standard material of multiple association areas.The processing mode of its economical and efficient causes plating gold in automobile The fields such as electronics, bio-sensing, computer, communication, Aero-Space are widely used.Plating gold Technology is divided into the metal such as two kinds of the hard gold of plating and electroplating mild alloy, hard golden generally use addition iron, cobalt, nickel to increase Add the hardness and wear resistance of gold coated films, it is extensive in the applications such as electricity interlinkage and printed circuit board (PCB)； And electroplating mild alloy purity is very high, in the interconnection of integrated circuit, encapsulation, MEMS, X-ray optic It is a kind of irreplaceable material.On technological layer, golden plating solution is divided into cyanide bath and the plating of sulfurous acid gold salt Liquid.Wherein, cyanide bath was obtained due to the advantages that golden utilization rate height, plated layer compact, smooth coating surface Widest application, but cyanide bath manufacture and processing procedure are all seriously polluted, by many countries and Forbid in area.Focus of the sulfurous acid gold salt electroplate liquid due to turning into people's research without cyanogen.
During the present invention is realized, inventor has found following technical problem in the prior art at least be present：
In plating solution in the plating gold of sulfurous acid gold salt electroplate liquid, gold plate surface is not smooth enough, plated layer compact Degree is not high.
The content of the invention
A kind of method of pulse plating gold provided by the invention and the gold plate of formation, enable to the gold to be formed It is smooth to electroplate layer surface, consistency is high.
In a first aspect, the present invention provides a kind of method of pulse plating gold, including：
Using sulfurous acid gold salt solution as electroplate liquid；
Using the titanium net of gold,platinized as anode；
Using prepare have gold seeds layer substrate be used as negative electrode, it is described prepare have on the substrate of gold seeds layer formed with Plating area image；
Apply electroplating current between the anode and the negative electrode to be electroplated, in the electricity of the negative electrode Plate region and form gold thin film layer, each pulse period of the electroplating current by direct impulse electroplating current and Reverse direct current etching electric current two parts are formed, and trigger Jin Jing in the plating area by direct impulse electroplating current The growth of grain, the sharp keen gold formed in the corrasion elimination electroplating process of electric current is etched using reverse direct current Nano crystal structure.
Alternatively, it is described reversely direct current etch electric current within a pulse period with the time integration with it is described just Within a pulse period it is 0.14-0.2 with the ratio of the integration of time to pulsed electroplating current.
Alternatively, the pulse width of the direct impulse electroplating current is 1-3ms, pulse period 10-30ms, The dutycycle of the direct impulse electroplating current is 0.033-0.33, and the electric current of the direct impulse electroplating current is close Spend for 0.1-2mA/cm2。
Alternatively, time of the reversely direct current etching electric current within a pulse period is 7-27ms.
Alternatively, the pH value of the sulfurous acid gold salt electroplate liquid is 6.5-7.5, and temperature is 40-55 DEG C.
Second aspect, the present invention provide a kind of gold plate, and the gold plate is using any one of claim 1-5 The method of described pulse plating gold prepares to be formed.
Alternatively, the surface roughness of the gold plate is in below 1nm.
Alternatively, as the increase of gold plate thickness, the surface roughness of the gold plate preserve unanimously substantially.
The method of pulse plating gold provided in an embodiment of the present invention and the gold plate of formation, are in chromium gold seeds layer Electroplated on substrate, the electric current applied between anode and negative electrode by direct impulse electroplating current and reversely it is constant Direct current etching electric current composition.Gold is triggered on plating piece surface by the plating solution without cyanogen by direct impulse electroplating current The growth of crystal grain, sharp keen the receiving of the corrasion elimination electroplating process formation of electric current is etched using reverse direct current Rice grainiess, realize that the gold plate surface of formation is smooth, plated layer compact degree is high.With the increasing of electroplating time Add, gold plate thickness thickens, and the surface roughness of gold plate is maintained at below 1nm without significant change.
Brief description of the drawings
Fig. 1 is the flow chart of the method for one embodiment of the invention pulse plating gold；
Fig. 2 is one embodiment of the invention pulse plating gold principle schematic；
Fig. 3 is the schematic diagram of the electroplating current in one embodiment of the invention pulse plating gold；
Fig. 4 is the scanning electron microscopy of the gold plate of the method generation of another embodiment of the present invention pulse plating gold Mirror photo；
Fig. 5 is that the gold plate of the method generation of another embodiment of the present invention pulse plating gold increases with thickness of coating Change schematic diagram.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the present invention Accompanying drawing in embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that Described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based on this hair Embodiment in bright, the institute that those of ordinary skill in the art are obtained under the premise of creative work is not made There is other embodiment, belong to the scope of protection of the invention.
The present invention provides a kind of method of pulse plating gold, as shown in figure 1, methods described includes：
S11, using sulfurous acid gold salt solution as electroplate liquid；
S12, using the titanium net of gold,platinized as anode；
S13, using prepare have gold seeds layer substrate have shape on the substrate of gold seeds layer as negative electrode, the preparation Into there is plating area image；
S14, application electroplating current is electroplated between the anode and the negative electrode, in the institute of the negative electrode State plating area and form gold thin film layer, each pulse period of the electroplating current electroplates electricity by direct impulse Stream and reverse direct current etching electric current two parts are formed, and are triggered by direct impulse electroplating current in the plating area The growth of Jin Jing's grain, the sharp keen gold nano formed in electroplating process is eliminated using the corrasion of reverse direct current Grainiess.
The method of pulse plating gold provided in an embodiment of the present invention, is electroplated on chromium gold seeds layer substrate, The electric current applied between anode and negative electrode etches set of currents by direct impulse electroplating current and reversely constant direct current Into.The growth of Jin Jing's grain is triggered on plating piece surface by the plating solution without cyanogen by direct impulse electroplating current, utilized The corrasion of reverse direct current etching electric current eliminates the sharp keen nano crystal structure that electroplating process is formed, and realizes The gold plate surface of formation is smooth, plated layer compact degree is high.With the increase of electroplating time, gold plate thickness Thicken, the surface roughness of gold plate is maintained at below 1nm without significant change.
Alternatively, it is described reversely direct current etch electric current within a pulse period with the time integration with it is described just Within a pulse period it is 0.14-0.2 with the ratio of the integration of time to pulsed electroplating current.
Alternatively, the pulse width of the direct impulse electroplating current is 1-3ms, pulse period 10-30ms, The dutycycle of the direct impulse electroplating current is 0.033-0.33, and the electric current of the direct impulse electroplating current is close Spend for 0.1-2mA/cm2。
Alternatively, time of the reversely direct current etching electric current within a pulse period is 7-27ms.
Alternatively, the pH value of the sulfurous acid gold salt electroplate liquid is 6.5-7.5, and temperature is 40-55 DEG C.
Gold-plated principle as shown in Fig. 2 gold ion in electroplate liquid spreads under electric potential gradient effect to negative electrode, Discharge process of the experience one with absorbing cathode electronics, becomes neutral atom, and finally grow into lattice.For Explain electroplating process overpotential theory show, the deposition overpotential in plating by electric discharge overpotential, diffuse through Current potential, reaction overpotential and crystallization overpotential composition, determine coating grain size and surface roughness.Tool Body is got on very well, and sedimentation rate will become quickly during high overpotential, subatomic concentration increase, while is formed more Nucleus, crystallite dimension is smaller, and coating surface roughness is smaller；On the contrary, sedimentation rate is very slow during low potential, Crystal grain has the time growth of abundance, forms thick crystal grain, coating surface roughness increases therewith.In experiment The real process of plating is extremely complex, and not a simple physics or chemical process can describe, crystal grain Obstruction degree, current density and metal ion of the process and surface topography of growth with anion to crystal growth Concentration is closely related.Importantly, the plating piece as negative electrode constantly discharges electronics in plating, this is put Electric process discharges substantial amounts of heat, and energy range is several eV, and cathode surface heat moment drastically accumulates, The high temperature of tens of thousands of degree is formed, a process drastically quenched is then undergone under the cooling of big specific heat capacity electroplate liquid, Gold is used as refractory metal, can rapidly be cooled down, and easy many places nucleation, forms careful crystal structure, Quenching process also determines the growth of crystal grain and the microstructure of coating.The fine and close journey of coating during plating gold Degree, surface roughness are related to the growth course of crystal grain, i.e., relevant with the overpotential in electroplating process, simultaneously Relevant with hardening heat and cool time, the overpotential how adjusted in electroplating process (electric discharge overpotential, expands Dissipate overpotential, reaction overpotential and crystallization overpotential), hardening heat and cool time, be realize crystal grain it is careful, The key of the smooth coating in surface.
The present invention is from the physical mechanism in electroplating process, Growing Process of Crystal Particles and in plating solution in regulation plating The process rapidly quenched under effect, the growth course and microstructure of coating are controlled, formation crystal grain is careful, table The smooth coating in face.For the analysis of the Review On The Nucleation Mechanism of electroplating process, regulation influences nucleation and growth Essential condition, the schematic diagram of technical solution of the present invention is as shown in figure 3, each pulse period of electroplating current By direct impulse electroplating current I1With reverse direct current etching electric current I2Two parts are formed, and electricity is electroplated by direct impulse Flow I1Trigger the growth of Jin Jing's grain in the plating area, electric current I is etched using reverse direct current2Corrasion Eliminate the sharp keen gold nanocrystals kernel structure formed in electroplating process.The frequency of the plating circuit is f, one Direct impulse electroplating current I in the individual pulse period1Time be t1, reverse direct current etching electric current I2Time be t2.Specific technical scheme is as follows：
(1) gold seeds layer is prepared by electron beam evaporation on substrate, electricity is obtained using VU contact photolithographies Regional graphics are plated, plating gold is carried out after RIE etching culls.
(2) sulfurous acid gold salt electroplate liquid is used, pH value is in neutrality, the pH value of preferably described electroplate liquid 6.5-7.5, temperature of electroplating solution are 40-55 DEG C, and plating solution is stirred continuously using peristaltic pump or magnetic agitation.
(3) electroplating current is applied between anode and negative electrode, electric current is by direct impulse electroplating current and reverse direct current Etch electric current two parts composition, direct impulse electroplating current I1In t1The growth of control Jin Jing's grain, arteries and veins in time The time t rushed beyond the time2By reverse direct current etching electric current I2Negative electrode plating piece is performed etching, removes pulse electricity The sharp thick grainiess formed in plating.Within a pulse period, direct impulse electroplating current is adjusted I1Size control plating overpotential, larger direct impulse electroplating current produces higher plating overpotential, can To accelerate sedimentation rate, increase subatomic concentration, form more nucleus, crystallite dimension is smaller, coating table Surface roughness is more smooth.Pulse period is 10-30ms, direct impulse electroplating current I1Width t1For 1-3ms, Direct impulse electroplating current I1Current density be 0.1-2mA/cm2, direct impulse electroplating current I1Dutycycle For 0.033-0.33, t1Selection to meet that appropriate electroplating efficiency should be obtained, avoid crystal grain again in pulse Too fast growth in time.
Adjust reverse direct current etching electric current I2Control reverse etch rate, I2With the time within a pulse period Integration and direct impulse electroplating current I1With the ratio of time integral it is 0.14-0.2 within a pulse period, one Effectively plating electric charge is that direct impulse electroplating current integration etches current integration with reverse direct current in the individual pulse period Difference.Reverse direct current etching current time t2Scope be 7-27ms, in t2In period, reverse direct current is carved Lose electric current I2Cathodic coating is performed etching, because the relatively sharp coarse grain of point discharge effect is easily carved Eating away.Simultaneously in t2In period, the electroplate liquid of big specific heat capacity carries out Cooling Quenching, I to negative electrode plating piece2And t2 Join respectively with hardening heat and time correlation.
(4) through electroplating deposition after a while, deposit thickness is less than photoresist thickness, takes out cathode sample, Following process or test are carried out after photoresist is removed.
In summary, the method for pulse plating gold provided by the invention, electroplating current electroplate electricity by direct impulse Stream and reverse direct current etching electric current two parts are formed.First, it is electric by setting direct impulse with constant current supply The size and pulse width of electric current are plated, the size of the overpotential in regulation plating, is sunk in higher overpotential Product speed quickly, simultaneously because cathode surface release electronics obtains higher nucleation temperature, is formed more Nucleus, crystallite dimension is smaller, and coating surface is more smooth.Secondly, reverse direct current etches electric current to cathodic coating Perform etching, because the relatively sharp coarse grain of point discharge effect is easily etched away, at the same time, greatly The electroplate liquid of specific heat capacity carries out Cooling Quenching to negative electrode plating piece, forms crystal orientation, size of multinuclear crystal grain etc., can To suppress the growth of cathode surface micro-structural, smooth coating is formed.Then, during regulation plating pulse current Between and the reverse dc time ratio, qualitative regulation is carried out to the process that nucleus is formed, while control the moon The pole plating piece cool time, also make it that the cation of cathode surface is supplemented within the time of negative electrode plating piece quenching, So that electroplating process is more stable.Finally use sulfurous acid gold salt electroplate liquid, pH value 6.5-7.5, in soda acid Neutrality, the requirement to negative electrode plating piece is relatively low, and subsequent technique compatibility is preferably, it is often more important that and it is environment-friendly, The production and processing of plating solution is all easier.
The embodiment of the present invention also provides a kind of gold plate, and the gold plate is using pulse plating gold described above Method prepare to be formed.
Alternatively, the surface roughness of the gold plate is in below 1nm.
Alternatively, as the increase of gold plate thickness, the surface roughness of the gold plate preserve unanimously substantially.
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with a specific implementation Example, the present invention is described in more detail.Comprise the following steps that：
(1) electron beam evaporation prepares 15nmCrAu Seed Layers, spin coating on 2 inches of high resistant (100) silicon 4620 thick photoresists of 12 microns of thickness simultaneously toast, and are exposed using UV contact photoetching machines, development, Plating patterns are obtained, region area to be electroplated is 1.05cm2, and etch cull
(2) homemade sulfurous acid gold salt electroplate liquid is heated to 40 DEG C in quartzy coating bath in a water bath and utilized Magnetic agitation is stable to be kept for more than 30 minutes, anode using 3 μm of platinums of plating titanium net, area is 18 × 12cm2, the distance of anode and negative electrode is 8cm, and negative electrode is put into electroplating bath.
(3) electroplating current, direct impulse electroplating current I are provided using alternating current-direct current source table1For 1.2mA, pulse Width is 2ms, and electronics release and metal deposit are caused on negative electrode plating piece surface；Reversely etching electric current I2For 0.022mA, duration 18ms, sharp keen projection is formed to etch away in plating pulse, makes negative electrode Neighbouring metal cation is supplemented, while also the multinuclear crystal grain of formation is quenched, in a cycle Effectively plating electric charge is 2.004 μ C, cycle 20ms, effective μ A of electroplating current 100.2.
(4) using Timer Controlling electroplating time and plating total electrical charge, it is possible thereby to control electroplating thickness, reach During to required electroplating thickness, negative electrode plating piece is taken out.
(5) surface topography and thickness of coating are tested using Scanning Electron microscope, step instrument etc., is finally adopted The photoresist on substrate is removed with dry etching and wet-cleaning, completes electroplating experiments.
By electroplating experiments, coating surface is optical mirror plane, and the scanning electron on 400nm thickness gold plates surface shows Micro mirror photo is as shown in Figure 4, it is seen that coating is smooth, and rat is less.In addition with the increasing of electroplating time Add, during electroplating thickness thickens, constantly measure the surface roughness of negative electrode plating piece, test result such as Fig. 5 Shown, when plating piece thickness increases to 12 μm, surface roughness is not significantly increased therebetween, is illustrated reversely The gold-plated method of DC-pulse can regulate and control the state of nucleus growth and quenching, effectively suppress in electroplating process The growth of Jin Jing's core, significantly inhibit with electroplating thickness increase and what surface roughness sharply increased ask Topic.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited to This, any one skilled in the art the invention discloses technical scope in, can readily occur in Change or replacement, should all be included within the scope of the present invention.Therefore, protection scope of the present invention It should be defined by scope of the claims.

Claims (8)

  1. A kind of 1. method of pulse plating gold, it is characterised in that including：
    Using sulfurous acid gold salt solution as electroplate liquid；
    Using the titanium net of gold,platinized as anode；
    Using prepare have gold seeds layer substrate be used as negative electrode, it is described prepare have on the substrate of gold seeds layer formed with Plating area image；
    Apply electroplating current between the anode and the negative electrode to be electroplated, in the electricity of the negative electrode Plate region and form gold thin film layer, each pulse period of the electroplating current by direct impulse electroplating current and Reverse direct current etching electric current two parts are formed, and trigger Jin Jing in the plating area by direct impulse electroplating current The growth of grain, the sharp keen gold formed in the corrasion elimination electroplating process of electric current is etched using reverse direct current Nano crystal structure.
  2. 2. the method for pulse plating gold according to claim 1, it is characterised in that the reverse direct current Etching electric current is within a pulse period with the integration and the direct impulse electroplating current of time in a pulse With the ratio of the integration of time it is 0.14-0.2 in cycle.
  3. 3. the method for pulse plating gold according to claim 2, it is characterised in that the direct impulse The pulse width of electroplating current is 1-3ms, pulse period 10-30ms, the direct impulse electroplating current Dutycycle is 0.033-0.33, and the current density of the direct impulse electroplating current is 0.1-2mA/cm2。
  4. 4. the method for pulse plating gold according to claim 2, it is characterised in that the reverse direct current It is 7-27ms to etch time of the electric current within a pulse period.
  5. 5. the method for pulse plating gold according to claim 1, it is characterised in that the sulfurous acid gold The pH value of salt electroplate liquid is 6.5-7.5, and temperature is 40-55 DEG C.
  6. 6. a kind of gold plate, it is characterised in that the gold plate is using any one of claim 1-5 Pulse plating gold method prepare to be formed.
  7. 7. gold plate according to claim 6, it is characterised in that the surface roughness of the gold plate In below 1nm.
  8. 8. gold plate according to claim 6, it is characterised in that with the increase of gold plate thickness, The surface roughness of the gold plate is consistent substantially.
CN201610321817.8A 2016-05-16 2016-05-16 The method of pulse plating gold and the gold plate of formation Withdrawn CN107385486A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112251782A (en) * 2020-10-30 2021-01-22 深圳市宏钢机械设备有限公司 Method, device and product for local gold electroplating
CN112410835A (en) * 2019-08-22 2021-02-26 中国科学院微电子研究所 Pulse reverse electroplating method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020033341A1 (en) * 1998-10-14 2002-03-21 Taylor E. Jennings Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
CN1822322A (en) * 2004-11-02 2006-08-23 夏普株式会社 Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method
CN103806053A (en) * 2012-11-12 2014-05-21 无锡三洲冷轧硅钢有限公司 Dual-pulse gold plating process
CN105401180A (en) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 Electroplating liquid of wear-resistant gold-plated film and electroplating method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020033341A1 (en) * 1998-10-14 2002-03-21 Taylor E. Jennings Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
CN1822322A (en) * 2004-11-02 2006-08-23 夏普株式会社 Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method
CN103806053A (en) * 2012-11-12 2014-05-21 无锡三洲冷轧硅钢有限公司 Dual-pulse gold plating process
CN105401180A (en) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 Electroplating liquid of wear-resistant gold-plated film and electroplating method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
黄玉媛等: "《精细化学品实用配方手册》", 31 January 2009, 中国纺织出版社 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112410835A (en) * 2019-08-22 2021-02-26 中国科学院微电子研究所 Pulse reverse electroplating method
CN112251782A (en) * 2020-10-30 2021-01-22 深圳市宏钢机械设备有限公司 Method, device and product for local gold electroplating

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