TWI307359B - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- TWI307359B TWI307359B TW092114853A TW92114853A TWI307359B TW I307359 B TWI307359 B TW I307359B TW 092114853 A TW092114853 A TW 092114853A TW 92114853 A TW92114853 A TW 92114853A TW I307359 B TWI307359 B TW I307359B
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive
- composition
- equal
- acid
- polishing
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims description 54
- 238000005498 polishing Methods 0.000 title claims description 46
- 238000000227 grinding Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 28
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 14
- 229920005862 polyol Polymers 0.000 claims description 12
- 150000003077 polyols Chemical class 0.000 claims description 12
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 11
- 229920000570 polyether Polymers 0.000 claims description 11
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 239000000178 monomer Substances 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims description 2
- 238000007259 addition reaction Methods 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 229920002098 polyfluorene Polymers 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 2
- VHMICKWLTGFITH-UHFFFAOYSA-N 2H-isoindole Chemical compound C1=CC=CC2=CNC=C21 VHMICKWLTGFITH-UHFFFAOYSA-N 0.000 claims 1
- 239000004593 Epoxy Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 150000001336 alkenes Chemical class 0.000 claims 1
- 238000007334 copolymerization reaction Methods 0.000 claims 1
- 125000001033 ether group Chemical group 0.000 claims 1
- 229920001519 homopolymer Polymers 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 239000003082 abrasive agent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid group Chemical group C(CCC(=O)O)(=O)O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 240000007643 Phytolacca americana Species 0.000 description 3
- -1 alpha-cerium nitride Chemical compound 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000001630 malic acid Substances 0.000 description 3
- 235000011090 malic acid Nutrition 0.000 description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- KVGZZAHHUNAVKZ-UHFFFAOYSA-N 1,4-Dioxin Chemical group O1C=COC=C1 KVGZZAHHUNAVKZ-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical group C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- YHXKVHQFWVYXIC-UHFFFAOYSA-N 3-(1-methylpyrrolidin-2-yl)-1-oxidopyridin-1-ium Chemical compound CN1CCCC1C1=CC=C[N+]([O-])=C1 YHXKVHQFWVYXIC-UHFFFAOYSA-N 0.000 description 1
- ZGHFDIIVVIFNPS-UHFFFAOYSA-N 3-Methyl-3-buten-2-one Chemical compound CC(=C)C(C)=O ZGHFDIIVVIFNPS-UHFFFAOYSA-N 0.000 description 1
- LQWCRKTUMHTCFU-UHFFFAOYSA-N C(CCC(=O)OCCCCCCCCCC)(=O)OCC Chemical compound C(CCC(=O)OCCCCCCCCCC)(=O)OCC LQWCRKTUMHTCFU-UHFFFAOYSA-N 0.000 description 1
- NBRLGNWCKPKCLJ-UHFFFAOYSA-N C1=C2C(=NC(=N1)SCCC(=O)O)N=CN2 Chemical compound C1=C2C(=NC(=N1)SCCC(=O)O)N=CN2 NBRLGNWCKPKCLJ-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- BUACSMWVFUNQET-UHFFFAOYSA-H dialuminum;trisulfate;hydrate Chemical compound O.[Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O BUACSMWVFUNQET-UHFFFAOYSA-H 0.000 description 1
- AXTYOFUMVKNMLR-UHFFFAOYSA-N dioxobismuth Chemical compound O=[Bi]=O AXTYOFUMVKNMLR-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical group O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- MRLGBUWOAFGOBH-VGWIFYLRSA-N panamine Chemical compound C([C@H](N1)N2CCC[C@H]([C@H]32)C2)CC[C@H]1[C@]13CN3CCCC[C@@H]3[C@H]2C1 MRLGBUWOAFGOBH-VGWIFYLRSA-N 0.000 description 1
- MRLGBUWOAFGOBH-UHFFFAOYSA-N panamine Natural products C1C(C23)CCCN3C(N3)CCCC3C32CN2CCCCC2C1C3 MRLGBUWOAFGOBH-UHFFFAOYSA-N 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
13073591307359
、【發明所屬之技術領域】 本發明係關於研磨組合物，例如，用以研磨磁碟之基 二、【先前技術】 當從磁碟基板製造磁碟時，其 X , . 基板表面通常經過研磨w 除unduation及使基板表面光、^ .. 的研磨組合物通常用以研磨基板表面匕。；：研加速劑 然而’當利用傳統研磨組人札w a 表面周邊部分相對於周圍部分1基板表面8寺，基板 研磨得較厲害。此阻礙了磁碑卜=區域而言，周圍部分 π令垔的増加。 三、【發明内容】 )本發明之目的在於提供一種研磨組合物，避免當利用 »亥組&物研磨磁碟基板表面時基板表面周圍部分受到過度 研磨。 為達上述目的，本發明係提供一種研磨組合物，包括 磨料，研磨加速劑及水。研磨組合物更包括一下列通式所 示之化合物： 0 〇BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing composition, for example, a substrate for grinding a magnetic disk. [Prior Art] When a magnetic disk is manufactured from a magnetic disk substrate, its surface is usually ground. w In addition to the unduation and the polishing of the substrate surface, the polishing composition is usually used to polish the surface of the substrate. ;: Research accelerators However, when the peripheral portion of the surface of the surface of the conventional polishing group is used, the substrate is ground more strongly than the peripheral portion 1 of the substrate surface. This hinders the magnetic monument = area, the surrounding part π 垔 垔 。. 3. SUMMARY OF THE INVENTION [0009] It is an object of the present invention to provide an abrasive composition that avoids excessive grinding of portions around the surface of the substrate when the surface of the disk substrate is ground using the <">> To achieve the above object, the present invention provides an abrasive composition comprising an abrasive, a grinding accelerator and water. The abrasive composition further comprises a compound of the formula: 0 〇
I II X-(C-NH-Y-NH-C-(〇-CH2-CH2)n-Z)m X表示聚醚多元醇之基團。^^表示一等於聚醚多元醇分子内I II X-(C-NH-Y-NH-C-(〇-CH2-CH2)n-Z)m X represents a group of a polyether polyol. ^^ indicates that one is equal to the polyether polyol
第8頁 1307359 五、發明說明（2) 羥基數目的數字。Y表示二價氫碳基。Z表示具有一活性氫 原子之單價化合物基團。數字η表示等於或大於3的整數。 本發明也提供一研磨化合物，其包括磨料，研磨加速劑及 水。研磨組合物更包括具衍生自異戊二烯磺酸或其鹽類之 單體單元的聚合物。 本發明其他觀點及優點可從下列描述内容及所示之圖 式，藉由實施例之舉例說明瞭解。 四、【實施方式】 本發明之第一具體實施例如下： 根據本發明之第一具體實施例，研磨組合物係由下列 通式（1 )所示之化合物，磨料，研磨加速劑及水。 0 0Page 8 1307359 V. Description of the invention (2) Number of hydroxyl numbers. Y represents a divalent hydrogen carbon group. Z represents a monovalent compound group having an active hydrogen atom. The number η represents an integer equal to or greater than 3. The invention also provides an abrasive compound comprising an abrasive, a grinding accelerator and water. The abrasive composition further comprises a polymer having monomer units derived from isoprene sulfonic acid or a salt thereof. Other aspects and advantages of the present invention will be apparent from the following description and the accompanying drawings. [Embodiment] The first embodiment of the present invention is as follows: According to a first embodiment of the present invention, the abrasive composition is a compound represented by the following formula (1), an abrasive, a grinding accelerator, and water. 0 0
II II X-(C-NH-Y-NH-C-(0-CH2-CH2)n-Z)m 〜（1) 在通式（1)裡，X表示聚醚多元醇之基團。較佳的聚 醚多元醇係由包括活性氫原子之化合物與環氧烷化物 (alkylene oxide)形成。聚趟多元醇之聚醚鏈較佳包括20-90重量％氧伸乙基（oxyethylene)。111表示一等於聚醚多元 醇分子内羥基數目的數字。m較佳為2至8之整數。Y表示二 價氫碳基。Z表示具一活性氫原子之單價化合物基團。Y及Z 的具體實例為藉由至少一環氧乙烯及環氧丙烯與低階醇或II II X-(C-NH-Y-NH-C-(0-CH2-CH2)n-Z)m~(1) In the formula (1), X represents a group of a polyether polyol. Preferred polyether polyols are formed from a compound comprising an active hydrogen atom and an alkylene oxide. The polyether chain of the polyfluorene polyol preferably comprises from 20 to 90% by weight of oxyethylene. 111 denotes a number equal to the number of hydroxyl groups in the polyether polyol molecule. m is preferably an integer of from 2 to 8. Y represents a divalent hydrogen carbon group. Z represents a monovalent compound group having an active hydrogen atom. Specific examples of Y and Z are by at least one ethylene oxide and propylene oxide with a lower alcohol or
第9頁 1307359 五、發明說明（3) 具少於或等於8個碳原子的炫基進行加成反應所形成之加成 聚合物。數字η表示至少為3的整數。 首先，說明上述通式（1 )所示之化合物如下。 通式（1 )所示之化合物係為一種抑制劑，用以當利用 第一具體實施例之研磨組合物研磨磁碟基板表面時，避免 基板表面周圍部分的研磨程度遠高於基板其他部分。 通式（1 )所示之化合物的具體實例為聚胺基曱酸酯表 面活性劑，例如ΑΚΖ0 NOBEL製造之BERM0D0L PUR系列， ASAHI DENKA C0.，LTD 製造之ADEKA NOL UH 系列，及Ronm & Hass Company 製造 ° 第一具體實施例之研磨化合物裡，通式（1 )所示之化 合物的數量較佳為O.OOi — i重量％，更佳為〇〇〇5_〇.5重 量％ ’最佳為0.005-0.3重量％。 以下係說明磨料。 虽利用第一具體實施例之研磨组合物研磨磁 面時’磨料係用以機械性地研磨基板表面。 鈽氧化物，例如二氧化鈽 體心氧化鈽，及®心氧化 單斜氧化錯，四角體氧化 例如單氧化鈦，三氧化二 氮化矽，例如α-氮化矽， 及碳化硬，例如α —碳化石夕， 磨料之具體Λ例包括銘氧化物，例如α _氧化紹，j _氧 化鋁二Θ -氧化鋁，扣_氧化鋁，及發煙氧化鋁；二氧化 例如氧化矽膠體及發煙氧化石夕 及二氧化二鈽，六方體氧化鈽 鈽；氧化鍅，例如發煙氧化錐 錯及無，型氧化錯；鈦氧化‘ 鈦，二氧化鈦，及發煙氧化鈦 /3 -氮化矽，及無定型氮化矽；Page 9 1307359 V. Description of the Invention (3) An addition polymer formed by an addition reaction of a leuco group having less than or equal to 8 carbon atoms. The number η represents an integer of at least 3. First, the compound represented by the above formula (1) will be described below. The compound represented by the formula (1) is an inhibitor for preventing the polishing of the portion around the surface of the substrate to be much higher than the other portions of the substrate when the surface of the disk substrate is ground by the polishing composition of the first embodiment. Specific examples of the compound represented by the formula (1) are polyaminophthalate surfactants such as BERM0D0L PUR series manufactured by NO0 NOBEL, ADEKA NOL UH series manufactured by ASAHI DENKA C0., LTD, and Ronm & Hass The amount of the compound represented by the formula (1) is preferably 0. OOi - i% by weight, more preferably 〇〇〇 5 〇. 5% by weight 'the most Preferably it is 0.005-0.3% by weight. The following is an explanation of the abrasive. While the magnetic surface is being abraded by the abrasive composition of the first embodiment, the abrasive is used to mechanically polish the surface of the substrate. Cerium oxides, such as cerium oxide body cerium oxide, and ® oxidized monoclinic oxidation, tetragonal oxidation such as monotium oxynitride, cerium trioxide, such as alpha-cerium nitride, and carbonization hard, such as alpha - Carbonized stone, special examples of abrasives include sulphur oxides, such as α _ oxidized, j _ alumina di-alumina, alumina ketone, and fumed alumina; oxidized, such as cerium oxide colloid and hair Nicotin oxide and bismuth dioxide, hexagonal cerium oxide; cerium oxide, such as fuming oxidized cone error and no, type oxidation error; titanium oxidation 'titanium, titanium dioxide, and fuming titanium oxide / 3 - tantalum nitride And amorphous tantalum nitride;
第10頁 1307359Page 10 1307359
五、發明說明（4) A _碳化矽及無定型碳化矽。第—具體實施例所 種類I以只有一種，二種或二種以上。 碧料的 當磨料是二氧化矽時，以βΕΤ方法測量表面積所得之 均顆粒^小較佳為〇.〇〇5_〇5 ，更加為。各 磨料為氧化鋁，氧化锆，氧化鈦，氮化矽或碳化矽時，由虽 雷射衍射顆粒大小分析儀（例如，由Beckman c〇ulter，V. INSTRUCTIONS (4) A _carbonized bismuth and amorphous bismuth carbide. First - Specific Examples There are only one type, two or more types I. When the abrasive is cerium oxide, the average particle size obtained by measuring the surface area by the β ΕΤ method is preferably 〇.〇〇5_〇5, more. When the abrasive is alumina, zirconia, titania, tantalum nitride or tantalum carbide, the laser diffraction particle size analyzer (for example, by Beckman c〇ulter,
Inc.所製造之LS_23〇 )所測量磨料之平均顆粒大小 jD50 % )較佳為〇. 〇5_2从爪，更佳為〇. ( — I 5 。當磨 氧化=扦，由掃瞄式電子顯微鏡所測量之磨料的平均顆叙 =小較佳為0. 0卜〇· 5 ，更加為0. 05-0. 45 /ZD1。 第一具體實施例之研磨組合物所含磨料的數 ㈣量％，更佳為卜25重量％。 竿又佳為〇·1〜 以下將說明研磨加速劑。 時 利用弟一具體實施例之研磨組合物研磨磁碟基板表 研磨加速劑係用以化學性地研磨基板表面。 面 亞胺二乙酸，葡 菸鹼酸，乙酸，甘 ，硫代琥珀酸羧基 。較佳的研磨加逮 。特別較佳的研磨 研磨加速劑的具體實例包括蘋果酸，乙醇酸，球 I ’#檬酸，馬來酸，衣康酸’丙二酸 糖酸’乳酸’苯乙醇酸，反式-丁烯酸 胺酸’丙胺酸’硫代乙酸，巯基琥珀酸 乙酯’硝酸鋁’硫酸鋁及硝酸鐵（[丨I : 劑為蘋果酸，乙醇酸，破珀酸及檸檬酸 q救佳、 加迷劑為琥珀酸。第一具體實施例研磨組合：：：：：磨 速劑的種類可以只有一種’二種或更多種。 3 1加 第一具體實施之研磨組合物所含研磨加迷劑的數旦 玉平乂 1307359LS_23〇 manufactured by Inc.) The average particle size of the abrasive measured by jD50% is preferably 〇. 〇5_2 from the claw, more preferably 〇. ( — I 5 . When grinding oxidation = 扦, by scanning electron microscope The average of the measured abrasives is preferably 0. 0 〇·· 5 , more preferably 0. 05-0. 45 /ZD1. The number of abrasives contained in the abrasive composition of the first embodiment (four)% More preferably, it is 25% by weight. 竿和佳为〇·1~ The polishing accelerator is described below. The disk substrate is ground using a polishing composition of a specific embodiment to polish the substrate. The polishing accelerator is used for chemical polishing. Surface of the substrate. Surface imine diacetic acid, gluconic acid, acetic acid, glycerol, thiosuccinic acid carboxyl group. Preferred grinding is increased. Specific examples of particularly preferred grinding and polishing accelerators include malic acid, glycolic acid, and balls. I '# citrate, maleic acid, itaconic acid malonic acid lactic acid 'lactic acid' phenylglycolic acid, trans-butenoic acid 'alanine' thioacetic acid, ethyl decyl succinate 'aluminum nitrate 'Aluminum sulphate and ferric nitrate ([丨I: agent is malic acid, glycolic acid, spearic acid and citric acid q rescue Preferably, the humectant is succinic acid. The first embodiment of the abrasive combination::::: the type of the grinding speed agent can be only one kind of two or more. 3 1 plus the first embodiment of the abrasive composition Grinding and adding agent for several years, Yu Ping, 1307359
佳為0.0卜25重量％，更佳為〇.卜2〇重量％，更佳為〇 2_ι〇 重S % 0 以下將說明水。 ^在第一具體實施例之研磨組合物裡，水係作為分散介 質及通式（1 )所示之化合物，磨料及研磨加速劑的溶劑。 較佳地，水不含雜質。更定言之，水較佳為經 交換水及蒸餾水》 i德之離千 _第一具體實施例之研磨組合物較佳藉由將通式（丨）所 不之化合物，磨料及研磨加速劑與水混合溶解及 式製得。槳葉攪拌器或超音波分佈器可以用於上述之$人 步驟。 此σ 第一具體實施例之研磨組合物的酸鹼值較佳為。 第一具體實施例係提供下列優點。 當利用第一具體實施例研磨組合物研磨磁碟基板表面 時，玎避免基板表面周圍部分的研磨程度遠高於其他部 分。此有助於磁碟容量的增加。因為研磨組合物包括通式 (1 )所示之化合4勿，第一具體實施例之研磨組合物會抑工制 基板表面周圍部分之研磨情況。通式（1 )所示之化合物適 當滅小基板與用以研磨基板之研磨墊之間的摩擦力β α根據 推測’減小摩擦力會使得基板表面周圍部分的研磨情^受# 到抑制。 當第一具體實施例研磨組合物所含通式（1 )所示之化 合物的數I大於或等於〇 _ 0 01重量％時’係提供可充分抑制 基板表面周圍部分過度研磨的研磨組合物。當通式（1)所Preferably, it is 0.0 b 25% by weight, more preferably 〇. Bu 2〇% by weight, more preferably 〇 2_ι〇 Heavy S % 0 The following will explain the water. In the polishing composition of the first embodiment, the water is used as a solvent for dispersing a medium and a compound represented by the formula (1), an abrasive and a grinding accelerator. Preferably, the water is free of impurities. More specifically, the water is preferably an exchanged water and distilled water. The polishing composition of the first embodiment is preferably a compound of the general formula (磨), an abrasive and a grinding accelerator. It is prepared by mixing with water and dissolving it. A paddle agitator or ultrasonic distributor can be used for the above-described human steps. The σ of the first embodiment of the polishing composition preferably has a pH value. The first embodiment provides the following advantages. When the surface of the disk substrate is ground using the polishing composition of the first embodiment, the degree of grinding of the portion around the surface of the substrate is prevented from being much higher than the other portions. This contributes to an increase in the capacity of the disk. Since the abrasive composition includes the compound 4 shown by the formula (1), the abrasive composition of the first embodiment inhibits the grinding of the portion around the surface of the substrate. The compound represented by the formula (1) is suitable for suppressing the frictional force between the small substrate and the polishing pad for polishing the substrate, and it is presumed that the reduction of the frictional force causes the polishing of the portion around the surface of the substrate to be suppressed. When the number I of the compound represented by the formula (1) contained in the polishing composition of the first embodiment is greater than or equal to 〇 0.001% by weight, it provides an abrasive composition which can sufficiently suppress excessive polishing of the peripheral portion of the substrate surface. When the formula (1)
第12頁 1307359Page 12 1307359
五、發明說明（6) 示之化合物的數量大於或等於〇· 0 0 5重量％時，可有效抑制 基板表面周圍部分過度被研磨。 當研磨組合物裡通式（1 )所示化合物之數量小於或等 於1重里％時，可避免添加過多化合物所造成之研磨速度驟 減及成本增加。當通式（1 )所示化合物的含量小於或等於 0.5重量％時，可更可靠地避免研磨速度驟減。當通式 (1 )所示之化合物含量小於或等於〇. 3重量％時，可幾乎 很成功地避免研磨速度驟減。 窃一，磨料的平均顆粒大小大於或等於〇· 〇〇5以m (假設磨料 是一氧化矽，氧化鍅，氧化鈦，氮化矽或碳化矽），及大_ 於或4於〇·〇ΐ (假設磨料是氧化飾）時，可以避免由於 磨料平均顆粒大小過小而造成研磨速度驟減。當磨料平均 顆教大小大於或等於〇· 0丨β m (假設磨料是二氧化矽），大 於或等於0, 1 // m (假設磨料是氧化鋁，氧化錘，氧化鈦，氮 化石夕或喊化石夕）’及大於或等於〇. 〇 5 y m (假設磨料是氧化 飾）日τ，可更可罪地避免研磨速度驟減。 ' 當磨料的平均顆粒大小小於或等於〇 · 5 β ^ (假設二氧化· 石夕或氧，鈽）’及小於或等於2 β m (假設磨料是氧化鋁，氧 化錯’氧化鈦’氮化矽或碳化矽）時，可避免由於磨料平 均顆粒大小過大而造成的經研磨表面之表面粗糙度增加及 七，刮痕。當平均顆粒大小小於或等於〇 · 3以m (假設磨料是 二氧，梦），2、於或等於1. 5 " m (假設磨料是氧化銘，氧化 、°，氧化鈦，氮化矽或碳化矽），及小於或等於〇. 45 # m (叙设磨料是氧化鈽），更可靠地避免經研磨表面之表面V. INSTRUCTION DESCRIPTION (6) When the amount of the compound shown is greater than or equal to 〇·0 0 5 wt%, it is possible to effectively suppress excessive polishing of the portion around the surface of the substrate. When the amount of the compound represented by the formula (1) in the abrasive composition is less than or equal to 1% by weight, the polishing rate is greatly reduced and the cost is increased due to the addition of the excessive compound. When the content of the compound represented by the formula (1) is less than or equal to 0.5% by weight, the sharp decrease in the polishing rate can be more reliably prevented. When the content of the compound represented by the formula (1) is less than or equal to 0.3% by weight, the sharp decrease in the grinding speed can be almost succeeded. Stealing, the average particle size of the abrasive is greater than or equal to 〇·〇〇5 in m (assuming the abrasive is cerium oxide, cerium oxide, titanium oxide, tantalum nitride or tantalum carbide), and large or 4 〇·〇 ΐ (Assuming the abrasive is an oxidized finish), it is possible to avoid a sharp drop in the grinding speed due to the excessive average particle size of the abrasive. When the average abrasive size of the abrasive is greater than or equal to 〇·0丨β m (assuming the abrasive is cerium oxide), greater than or equal to 0, 1 // m (assuming the abrasive is alumina, oxidized hammer, titanium oxide, nitride rock or Shouting fossil eve) 'and greater than or equal to 〇. 〇5 ym (assuming the abrasive is oxidized) day τ, can be more sinful to avoid a sharp drop in grinding speed. 'When the average particle size of the abrasive is less than or equal to 〇·5 β ^ (assuming oxidized · Shi Xi or oxygen, 钸)' and less than or equal to 2 β m (assuming the abrasive is alumina, oxidized wrong 'titanium oxide' nitriding In the case of niobium or tantalum carbide, the surface roughness of the ground surface due to excessive abrasive grain size is excessively avoided and seven, scratches are avoided. When the average particle size is less than or equal to 〇·3 in m (assuming the abrasive is dioxin, dream), 2, or equal to 1. 5 " m (assuming the abrasive is oxidized, oxidized, °, titanium oxide, tantalum nitride Or cerium carbide), and less than or equal to 〇. 45 # m (the abrasive is yttrium oxide), more reliably avoiding the surface of the ground surface
1307359 五、發明說明（7) ----- 粗糖度局。 當第一具體實施例研磨組合物中磨料大於或等於〇 i重 量％，可避免由於缺乏磨料而造成研磨速度變小。冬磨料 含量大於或等於丨重量％時’可更可靠地避免由於缺曰乏磨料 而造成研磨迷度變小。 當第一具體實施例研磨組合物地磨料數量小於或等於 40重量％，可避免由於磨料數量過多而造成黏度增加，研 磨蛰阻塞及經研磨表面之表面缺陷產生。當數量小於或等1307359 V. Description of invention (7) ----- Crude sugar bureau. When the abrasive in the first embodiment of the abrasive composition is greater than or equal to 〇 i by weight, the polishing rate can be prevented from becoming small due to the lack of abrasive. When the winter abrasive content is greater than or equal to 丨% by weight, it is more reliable to avoid the grinding roughness becoming smaller due to the lack of abrasive. When the amount of the abrasive of the abrasive composition of the first embodiment is less than or equal to 40% by weight, the increase in viscosity due to the excessive amount of the abrasive can be avoided, and the surface defects of the abrasive dam and the surface to be polished are generated. When the quantity is less than or equal
於25重量％時，可更可靠地避免黏度增加，研磨墊阻塞及 經研磨表面之表面缺陷產生。黏度的增加會使研磨組合物 的 < 加工性降低。 當研磨加速劑為蘋果酸，乙醇酸，琥珀酸，或檸檬酸 時，係可增加研磨速度並抑制在經研磨表面上形成表面缺 陷。當研磨加速劑為琥珀酸時’研磨速度可進一步增加’ I真更可靠地抑制在經研磨表面上形成表面缺陷。曰At 25% by weight, it is more reliable to avoid an increase in viscosity, clogging of the polishing pad and surface defects on the surface to be polished. An increase in viscosity results in a decrease in the processability of the abrasive composition. When the grinding accelerator is malic acid, glycolic acid, succinic acid, or citric acid, the grinding speed is increased and the formation of surface defects on the ground surface is suppressed. When the grinding accelerator is succinic acid, the grinding speed can be further increased. I really more reliably suppress the formation of surface defects on the ground surface.曰
當第一具體實施例之研磨组合物所含的研磨加速劑數 量犬於或等於0.01重量％時，可避免由於缺乏研磨加速劑 而造成研磨速度降低。當含量大於或等於〇.1重量％時，可 更< 靠地避免研磨速度降低。當含量大於或等於〇2重量％ 時，可非常成功地避免研磨速度降低。 當第一具體實施例之研磨組合物所含的研磨加速劑數 量小於或等於2 5重量％時’可避免由於含量過多而造成成 本增加。當含量小於或等於20重量％時，可更可靠地避免 成本增加。當含量小於或等於丨〇重量％時，可非常成功地When the amount of the grinding accelerator contained in the abrasive composition of the first embodiment is 0.01% by weight or more, the reduction in the polishing speed due to the lack of the polishing accelerator can be prevented. When the content is greater than or equal to 0.1% by weight, the polishing rate can be further reduced by the ground. When the content is greater than or equal to 〇2% by weight, the reduction in the grinding speed can be very successfully avoided. When the amount of the grinding accelerator contained in the abrasive composition of the first embodiment is less than or equal to 25 % by weight, it is possible to avoid an increase in cost due to an excessive content. When the content is less than or equal to 20% by weight, the increase in cost can be more reliably prevented. Very successful when the content is less than or equal to 丨〇% by weight
第14頁 1307359 五、發明說明（8) 避免成本增加。 當第一具體實施例研磨組合物之酸鹼值大於或等於2 時，可避免研磨用之研磨機被研磨級合物磨I虫。 當第一具體實施例研磨組合物的酸鹼值小於或等於7 時，可避免由於研磨組合物呈鹼性而造成的研磨速度降 低，經研磨表面之表面粗链度增加及在經研磨表面上形成 刮痕。 以下將說明本發明之第二具體實施例。Page 14 1307359 V. Description of invention (8) Avoid cost increases. When the pH of the first embodiment of the abrasive composition is greater than or equal to 2, the mill for grinding can be prevented from being ground by the abrasive grade. When the pH value of the first embodiment of the abrasive composition is less than or equal to 7, the polishing rate is lowered due to the alkalinity of the abrasive composition, and the surface of the ground surface is increased in thickness and on the ground surface. Forming scratches. Next, a second embodiment of the present invention will be described.
第二具體實施例之研磨組合物係由具有衍生自異戊二 烯磺酸或其鹽類之單體單元的聚合物，磨料，研磨加速劑 及水所組成。 聚合物係為一種抑制劑，用以當利用第二具體實施例 之研磨組合物研磨磁碟基板表面時，避免基板表面周圍部 分的研磨程度遠高於基板其他部分。 ° 聚合物可以包含並非衍生自異戊二烯磺酸或其趟類之 ，體單非衍生自異戊二烯磺酸或其鹽類之單體單元 貫例為衍生自異戊二烯酸或丙烯酸之單體單元。 0.001 0. 3重量％ 不一六腥員她例之研磨化合物裡，聚合物的量較 1-曰1重量％ ’更佳為0.005-0.5重量％，最佳為〇父The polishing composition of the second embodiment is composed of a polymer having a monomer unit derived from isoprene sulfonic acid or a salt thereof, an abrasive, a grinding accelerator, and water. The polymer is an inhibitor for preventing the polishing of the peripheral portion of the substrate surface to a much higher degree than the other portions of the substrate when the disk substrate surface is ground using the polishing composition of the second embodiment. ° The polymer may comprise a monomer unit which is not derived from isoprene sulfonic acid or its anthracene, and which is derived from isoprene sulfonic acid or a salt thereof, is derived from isoprene acid or Monomer unit of acrylic acid. 0.001 0. 3 wt% The amount of the polymer in the abrasive compound of her example is preferably 0.005 to 0.5% by weight, preferably 0.005 to 0.5% by weight, preferably the uncle.
I；量 ％。 · 第二具體實施例之研磨組合物係藉由將聚合物，、. 及研磨加速劑與水混合溶解及分散的方式製得。 磨料 第二具體實施例之研磨組合物的酸鹼值較佳為2 7 第一具體實施例研磨組合物裡通式（1 )所示之化丄 1307359 五 、發明說明（11)I; amount %. The polishing composition of the second embodiment is obtained by mixing and dissolving a polymer, a polishing accelerator and water with water. Abrasives The pH of the polishing composition of the second embodiment is preferably 2 7. The first embodiment of the polishing composition has the hydrazine represented by the formula (1). 1307359 V. Description of the invention (11)
換水混合，製備實施例卜3 1及比較實施例1 - 4之研磨組合 物。在下列條件下，利用每個貫施例研磨組合物研磨磁碟 基板上表面及下表面。 基板：具無電鍍鎳磷塗層之史3. 5 (与95 mm)之基板 研磨機：具屮720 mm上下機台之雙面研磨機 研磨墊：BELLATRIX N0048，Kanebo Ltd.製造 研磨墊負荷：100克/平方公分（与1〇 kPa) 上機台旋轉速度：24 rpm 下機台旋轉速度：1 6 rpm 研磨組合物之供料量：1 5 0 m 1 / m i η 研磨量：基板雙面共3 利用 ADE Phase Shift (U.S)所製造的MicroXAM 測量 基板被磨光後其周圍部分的滾磨值V r。測量值V r係代入下· 列方程式（2 )，獲得滾磨的下降率。如果滚磨的下降率大 於2 0 % ’則評估為◎’如果滚磨的下降值大於丨〇 %但小於 20 % ’則評估為〇，如果滚磨的下降率大於〇 %但小於 1 0 % ’則評估為△’如果滾磨的下降值小於或等於〇 %，則 評估為X 。結果顯示於表1的"滾磨"欄。 滾磨的下降率[% ] = (1 - Vr /比較實施例1之”）X丨〇 〇〜（2 : 滚磨係為顯示基板表面周圍部分之過度研磨程度的參 考指標之一 滾磨之定義如下。如第1 (a)圖所示，從基板The polishing composition of Example 3-1 and Comparative Example 1-4 was prepared by mixing with water. The upper and lower surfaces of the disk substrate were ground using each of the examples of the polishing composition under the following conditions. Substrate: Substrate with electroless nickel-phosphorus coating 3. 5 (with 95 mm) substrate grinder: double-sided grinder with 屮 720 mm upper and lower machine polishing pad: BELLATRIX N0048, Kanebo Ltd. manufactured polishing pad load: 100 g/cm 2 (with 1 kPa) Upper table rotation speed: 24 rpm Lower table rotation speed: 16 rpm Feeding amount of grinding composition: 1 5 0 m 1 / mi η Grinding amount: both sides of the substrate A total of 3 uses the MicroXAM manufactured by ADE Phase Shift (US) to measure the barreling value V r of the surrounding portion after the substrate is polished. The measured value V r is substituted into the following equation (2) to obtain the rate of decline of the barrel. If the reduction rate of barreling is greater than 20% ', it is evaluated as ◎ 'If the falling value of barreling is greater than 丨〇% but less than 20%', it is evaluated as 〇, if the rate of decline of barreling is greater than 〇% but less than 10% 'The evaluation is △' If the falling value of the barrel is less than or equal to 〇%, it is evaluated as X. The results are shown in the "Rolling" column of Table 1. Rolling reduction rate [%] = (1 - Vr / Comparative Example 1)) X丨〇〇~(2: The barreling system is one of the reference indicators for indicating the degree of excessive grinding of the portion around the surface of the substrate. Defined as follows, as shown in Figure 1 (a), from the substrate
第18頁 1307359 說明（12) ' --- f面邊緣往内算起〇· 3〇 mm設為點Α，從基板表面邊緣往内 鼻起3. 80 mm設為點β。滾磨定義為連接點Α及8之交又曲 與連接點Α及點Β之直線之間的最大距離。 利用M i croXAM測量戳磨值Vd基板經過研磨後的周圍部 分。所測得Vd值代入下列方程式（3 )，獲得戳磨下降°。 如果戳磨的下降率大於20%，則評估為◎，如果戳磨的下 降值大於1 0 %但小於2〇 %，則評估為〇，如果戳磨的下降 率大於0 %但小於10 %，則評估為△，如果戳磨的下降值牛小 於或等於0 %，則評估為x 。結果顯示於表！的"戳磨π欄。 戮磨的下降率[%] = (l_Vd/比較實施例1之yd) X 1〇〇〜（3、 戳磨係為顯示基板表面周圍部分之過度研磨程度的參 考指標之一。戳磨之定義如下。如第丨（b)圖所示，從基板 ，面邊緣往内算起4. 30 mm設為點C，從基板表面邊^ ^内 #起3_3〇1111115又為點1)，及從基板表面邊緣往内算起〇3〇爪1]1 設為點E。線L為連接點c及點D之剖面曲線，由最少二次方 方法獲得。位於線L上，從基板周圍部分往内算起〇. 3〇_的 底設為點E ’ 。戳磨定義為點e到點E，之間的距離。 根據下列方程式（4 )獲得研磨基板的研磨速度。如果1 研磨速度大於或等於0.70 " m/min ’則評估為◎，如果研磨 速度大於或等於0.65 //m/min但小於0.70 #m/min，則評估 為Ο ’如果研磨速度大於或等於〇.6〇 但小於〇 β5 "in/min，則評估為△，如果研磨速度小於〇 6〇 #m/min，Page 18 1307359 Description (12) ' --- f face edge inward 〇 · 3 〇 mm set to point Α, from the edge of the substrate surface to the nose 3. 80 mm set to point β. Rolling is defined as the maximum distance between the point of intersection and the line connecting the point Α and the point Β. The surrounding portion of the Vd substrate after grinding was measured by M i croXAM. The measured Vd value is substituted into the following equation (3) to obtain a puncture drop °. If the rate of decline of the puncturing is greater than 20%, the evaluation is ◎, and if the falling value of the puncturing is greater than 10% but less than 2%, the evaluation is 〇, if the rate of decline of the puncturing is greater than 0% but less than 10%, Then it is evaluated as △, and if the falling value of the poke is less than or equal to 0%, it is evaluated as x. The results are shown in the table! "Poke grinding π column. The rate of decline of honing [%] = (l_Vd / yd of Comparative Example 1) X 1 〇〇 ~ (3, puncturing is one of the reference indicators showing the degree of excessive grinding around the surface of the substrate. Definition of puncturing As shown in the figure (b), from the substrate, the edge of the substrate is 4.30 mm, which is set to point C, from the edge of the substrate surface ^^内# from 3_3〇1111115 and point 1), and from The edge of the surface of the substrate is counted as 〇3〇1]1 is set to point E. Line L is a section curve connecting point c and point D, which is obtained by a least square method. Located on the line L, the bottom of the 〇. 3〇_ is counted from the periphery of the substrate to the point E ’. The poke is defined as the distance between point e and point E. The polishing rate of the ground substrate was obtained according to the following equation (4). If the grinding speed is greater than or equal to 0.70 " m/min ', the evaluation is ◎. If the grinding speed is greater than or equal to 0.65 //m/min but less than 0.70 #m/min, the evaluation is Ο 'If the grinding speed is greater than or equal to 〇.6〇 but less than 〇β5 "in/min, it is evaluated as △, if the grinding speed is less than 〇6〇#m/min,
1307359 五、發明說明（13) 則評估為X 。結果顯示於表1的''研磨速度''攔。 研磨速度[#in/min]= 基本因研磨而減少的重量[g]/ (基板 的研磨面積[c m2 ] X鎳填鍍層密度[g / c m3 ] X研磨時間 [min] X 10000 〜（4) 表11307359 V. Invention description (13) is evaluated as X. The results are shown in Table '''grinding speed''. Grinding speed [#in/min] = basic weight reduced by grinding [g] / (grinding area of substrate [c m2 ] X density of nickel filling layer [g / c m3 ] X grinding time [min] X 10000 ~ ( 4) Table 1
滚 戡 研 磨 研磨加速劑 抑制剤 ik & 速 值 度 含f 拽 躲度 含t 種頻 (重t 頬 (GPS) (重曼 %) 實矻例1 0. 125 A 9500 0.0025 3.5 ◎ ◎ Δ 贵砣例2 0.25 A 1809500 0.00125 3.5 〇 〇 〇 5Γ铯例3 0. 25 A 9500 0.0025 3.5 ◎ ◎ Δ 第20頁 1307359 五、發明說明（14) r讫例4 0. 25 A 9500 0.0025 3.5 ◎ ◎ △ 貧砲例5 0. 375 A 9500 0.0025 3.5 ◎ ◎ Δ r铯倒6 0.25 A 30000 0, 0025 3.5 ◎ ◎ 〇 實铯洌·？ 坑珀璉 0. 25 A 8500 0.0025 3.5 ◎ ◎ 〇 矿施例8 藏呆孩 0.25 A 9500 0. 0025 3.0 ◎ ◎ Δ T絶例9 禪懞猓 0. 25 A 9500 0.0025 2. 4 〇 0 Δ f总例10 乙51被 0.5 A 9500 0. 0025 2.9 ◎ ◎ Δ r绝倒u 馬來孩 0. 25 A 9500 0. 0025 2,2 ◎ ◎ Δ 矿达例12 农康璉 0.25 A 9500 0.0025 2.9 〇 〇 △ 贫免例13 0.25 A 9500 0.0025 2.4 ◎ ◎ Δ 贫冼例14 乙故 0.25 A 9500 0. 0025 2.8 ◎ ◎ Δ 资铯倒15 细基莸 珀皴 0.25 A 9500 0.0025 3. t o 〇 0 貧砲例 羧基乙 基 硫代菰 0.25 A 9500 Q.0025 3.2 o o ◎ «Rolling grinding and grinding accelerator to suppress 剤ik & speed value with f 拽 hiding degree with t frequency (weight t 頬 (GPS) (heavyman%) Example 1 0. 125 A 9500 0.0025 3.5 ◎ ◎ Δ expensive Example 2 0.25 A 1809500 0.00125 3.5 〇〇〇5Γ铯例3 0. 25 A 9500 0.0025 3.5 ◎ ◎ Δ Page 20 1307359 V. Description of invention (14) r讫例4 0. 25 A 9500 0.0025 3.5 ◎ ◎ △ Poor guns 5 0. 375 A 9500 0.0025 3.5 ◎ ◎ Δ r 6 6 0.25 A 30000 0, 0025 3.5 ◎ ◎ 〇 铯洌 ? 坑 坑 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏 琏Tibetan child 0.25 A 9500 0. 0025 3.0 ◎ ◎ Δ T Exception 9 Zen 猓 0. 25 A 9500 0.0025 2. 4 〇 0 Δ f Total example 10 B 51 is 0.5 A 9500 0. 0025 2.9 ◎ ◎ Δ r绝倒u Malay child 0. 25 A 9500 0. 0025 2,2 ◎ ◎ Δ Mine up case 12 Nongkang 0.25 A 9500 0.0025 2.9 〇〇 △ Poverty 13 0.25 A 9500 0.0025 2.4 ◎ ◎ Δ Barren case 14乙 0.25 A 9500 0. 0025 2.8 ◎ ◎ Δ 铯 铯 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴 皴Example carboxyethyl thiopurine 0.25 A 9500 Q.0025 3.2 o o ◎ «
第21頁 1307359 五、發明說明（15) t it iS L A 9500 0. 0025 2.8 ◎ ◎ △ f L8 琥Μ珑 0. L25 Βί 180 0. 0025 3.5 ◎ ◎ ◎ 貧铯例19 0.25 BL m 0. 0025 3.5 ◎ ◎ ◎ r絶倒2〇 0. 375 BL m 0. 0025 3.5 ◎ ◎ ◎ 矿炮例2L 0. 25 81 L80 0. 0075 3. 5 ◎ ◎ ◎ 矿讫阑22 琥功故 0.25 Bl 180 0.002 3.5 ◎ ◎ ◎ 23 琥功铖 0.25 B2 90 0.0025 3.5 ◎ ◎ ◎ r铯例24 蘋果拔 0.25 BL L80 0. 0025 3.0 ◎ ◎ 〇 犷拖例25 禪檬键 0.25 B1 180 0. 0025 2.4 〇 o 〇 f总例2Θ 乙SI璉 0.5 51 m 0. 0025 2.9 ◎ ◎ 〇 t铯例2了 馬來埏 0,2& Bl iso 0.0025 2,2 ◎ ◎ o 實抱例28 衣康醆 0. 25 Βί L80 0.0025 2.9 〇 o ◎ 貧砲例29 丙二珑 0. 25 Bt 180 0.0025 2.4 ◎ ◎ 〇 r铯例30 泛胺二 乙狨 0.25 BL 180 0.0025 2.8 ◎ 〇 實铯例31 桴槠珐 iS Bl L80 0. 0025 3.8 ◎ ◎ o 比較r铯例1 琥攰缄 0.25 - - * 3.5 X X 〇Page 21 1307359 V. Description of invention (15) t it iS LA 9500 0. 0025 2.8 ◎ ◎ △ f L8 Amber 0. L25 Βί 180 0. 0025 3.5 ◎ ◎ ◎ Poor example 19 0.25 BL m 0. 0025 3.5 ◎ ◎ ◎ r absolutely 2〇0. 375 BL m 0. 0025 3.5 ◎ ◎ ◎ Mine gun example 2L 0. 25 81 L80 0. 0075 3. 5 ◎ ◎ ◎ Mine 22 Hu gong 0.25 Bl 180 0.002 3.5 ◎ ◎ ◎ 23 铖 铖 0.25 B2 90 0.0025 3.5 ◎ ◎ ◎ r 铯 Example 24 Apple 0.25 BL L80 0. 0025 3.0 ◎ ◎ 〇犷 Drag example 25 Zen key 0.25 B1 180 0. 0025 2.4 〇o 〇f General Example 2Θ B SI琏0.5 51 m 0. 0025 2.9 ◎ ◎ 〇t铯 Example 2 Malay 埏0,2& Bl iso 0.0025 2,2 ◎ ◎ o Real holding case 28 衣康醆0. 25 Βί L80 0.0025 2.9 〇o ◎ Poor gun case 29 丙二珑0. 25 Bt 180 0.0025 2.4 ◎ ◎ 〇r铯 Example 30 Panamine Ammonia 0.25 BL 180 0.0025 2.8 ◎ 〇 铯 Example 31 桴槠珐iS Bl L80 0. 0025 3.8 ◎ ◎ o Comparison r 铯 1 攰缄 攰缄 0.25 - - * 3.5 XX 〇
1307359 五、發明說明 在表1所示之抑制劑種類攔裡，A表示通式（1 )所代表 之化合物，βΐ異戊二烯磺醆與丙烯酸之共聚物，β2表示異 戊一烯續酸與異戊二烯之共聚物。 抑制劑黏度欄裡的數值係為利用ΒΗ型旋轉黏度計測量 具30重量％活性組成及保持在25 ^之抑制劑水溶液的數 ，°當測量通式（1 )所示之化合物的黏度時，使用Ν〇. 6 方疋轉器且No. 6的旋轉速度為1〇 r ρπ1。當測量異戊二烯磺酸 烯酸共聚物的黏度，及測量異戊二烯磺酸與異戊二烯 共聚物的黏度時，N〇. 3旋轉器而其旋轉速度為62. 5 rpm。 ^ ，然本發明之較佳實施例揭露如上所述，然其並非用 =限定本發明，任何熟習相關技藝者，在不脫離本發明之 2和範圍内，當可作些許之更動與潤：，因此本 淮】保護範圍須視本說明書所附之申請專利範圍所界定者1307359 V. INSTRUCTION DESCRIPTION In the inhibitor type shown in Table 1, A represents a compound represented by the formula (1), a copolymer of β-isoprene sulfonium sulfonate and acrylic acid, and β2 represents an isopentenone acid. Copolymer with isoprene. The value in the viscosity column of the inhibitor is measured by using a 旋转-type rotary viscometer to measure the active composition with 30% by weight and the aqueous solution of the inhibitor held at 25 °. When measuring the viscosity of the compound represented by the general formula (1), 6. 6 square turret and the rotation speed of No. 6 is 1〇r ρπ1. 5 rpm。 When measuring the viscosity of the isoprene sulfonate copolymer, and measuring the viscosity of the isoprene sulfonic acid and the isoprene copolymer, the N 〇 3 rotator and its rotation speed of 62.5 rpm. The preferred embodiment of the present invention is disclosed above, but it is not intended to limit the present invention, and those skilled in the art can make some changes and changes without departing from the scope and scope of the present invention: Therefore, the scope of protection shall be defined by the scope of the patent application attached to this specification.
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第24頁Page 24
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| JP2002157964A JP4095833B2 (en) | 2002-05-30 | 2002-05-30 | Polishing composition |
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| TW (1) | TWI307359B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4068499B2 (en) * | 2003-05-09 | 2008-03-26 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US20050139119A1 (en) * | 2003-12-24 | 2005-06-30 | Rader W. S. | Polishing composition |
| US20080193801A1 (en) * | 2004-08-30 | 2008-08-14 | Showa Denko K.K. | Glass Substrate for Magnetic Recording Medium and Magnetic Recording Medium |
| JP2006099949A (en) * | 2004-08-30 | 2006-04-13 | Showa Denko Kk | Glass substrate for magnetic recording medium and magnetic recording medium |
| JP4667848B2 (en) * | 2004-12-13 | 2011-04-13 | 花王株式会社 | Polishing liquid composition for glass substrate |
| JP4637003B2 (en) * | 2005-11-11 | 2011-02-23 | 花王株式会社 | Manufacturing method of hard disk substrate |
| US7655057B2 (en) * | 2005-08-31 | 2010-02-02 | Fujimi Incorporated | Polishing composition and polishing method |
| JP2007063440A (en) * | 2005-08-31 | 2007-03-15 | Fujimi Inc | Polishing composition and polishing method |
| CN1986612B (en) * | 2005-12-22 | 2012-07-25 | 花王株式会社 | Polishing composition for glass substrate |
| TWI402335B (en) * | 2006-09-08 | 2013-07-21 | Kao Corp | Polishing composition |
| JP5957292B2 (en) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using the same, and substrate manufacturing method |
| KR101353315B1 (en) * | 2013-08-07 | 2014-01-21 | 소문식 | Composition for cutting wheel and cutting wheel comprising the same |
| JPWO2020009054A1 (en) * | 2018-07-04 | 2021-08-05 | 住友精化株式会社 | Polishing composition |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2590790B2 (en) * | 1988-04-15 | 1997-03-12 | 日本合成ゴム株式会社 | Method for producing conjugated diene sulfonated polymer |
| JP3891604B2 (en) * | 1996-04-17 | 2007-03-14 | 花王株式会社 | Abrasive composition and polishing method using the same |
| SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
| JP4250831B2 (en) * | 1999-06-23 | 2009-04-08 | Ｊｓｒ株式会社 | Cleaning fluid for semiconductor parts |
| MY128169A (en) * | 1999-06-28 | 2007-01-31 | Showa Denko Kk | Abrasive composition for substrate for magnetic recording disks and process for producing substrate for magnetic recording disk. |
| JP4273475B2 (en) * | 1999-09-21 | 2009-06-03 | 株式会社フジミインコーポレーテッド | Polishing composition |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| JP4238951B2 (en) * | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
| US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
| JP2003313542A (en) * | 2002-04-22 | 2003-11-06 | Jsr Corp | Aqueous dispersion for chemomechanical polishing use |
-
2002
- 2002-05-30 JP JP2002157964A patent/JP4095833B2/en not_active Expired - Lifetime
-
2003
- 2003-05-29 MY MYPI20031978A patent/MY137251A/en unknown
- 2003-05-30 CN CN200610103020.7A patent/CN101012313B/en not_active Expired - Fee Related
- 2003-05-30 TW TW092114853A patent/TWI307359B/en not_active IP Right Cessation
- 2003-05-30 GB GB0312182A patent/GB2390370B/en not_active Expired - Fee Related
- 2003-05-30 CN CNB031407102A patent/CN100347227C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101012313B (en) | 2010-12-08 |
| TW200400250A (en) | 2004-01-01 |
| MY137251A (en) | 2009-01-30 |
| GB0312182D0 (en) | 2003-07-02 |
| JP4095833B2 (en) | 2008-06-04 |
| CN1461766A (en) | 2003-12-17 |
| CN100347227C (en) | 2007-11-07 |
| CN101012313A (en) | 2007-08-08 |
| GB2390370A (en) | 2004-01-07 |
| JP2003342556A (en) | 2003-12-03 |
| GB2390370B (en) | 2006-10-11 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |