TW200400250A - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- TW200400250A TW200400250A TW092114853A TW92114853A TW200400250A TW 200400250 A TW200400250 A TW 200400250A TW 092114853 A TW092114853 A TW 092114853A TW 92114853 A TW92114853 A TW 92114853A TW 200400250 A TW200400250 A TW 200400250A
- Authority
- TW
- Taiwan
- Prior art keywords
- abrasive
- polishing
- polishing composition
- composition
- grinding
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 83
- 239000000203 mixture Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 150000001875 compounds Chemical class 0.000 claims abstract description 38
- 229920000642 polymer Polymers 0.000 claims abstract description 24
- 229920005862 polyol Polymers 0.000 claims abstract description 11
- 239000004721 Polyphenylene oxide Substances 0.000 claims abstract description 10
- 229920000570 polyether Polymers 0.000 claims abstract description 10
- 150000003077 polyols Chemical class 0.000 claims abstract description 10
- 239000000178 monomer Substances 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- -1 isopropylene sulfonic acid Chemical compound 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- XGPVDWLMFXGEBT-UHFFFAOYSA-N prop-1-ene-2-sulfonic acid Chemical compound CC(=C)S(O)(=O)=O XGPVDWLMFXGEBT-UHFFFAOYSA-N 0.000 claims 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 abstract description 18
- 230000002093 peripheral effect Effects 0.000 abstract description 17
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 4
- 150000002430 hydrocarbons Chemical group 0.000 abstract 1
- 238000000227 grinding Methods 0.000 description 58
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 239000003082 abrasive agent Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052792 caesium Inorganic materials 0.000 description 5
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 5
- 239000003112 inhibitor Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 241001674048 Phthiraptera Species 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 235000004279 alanine Nutrition 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- XSXHWVKGUXMUQE-UHFFFAOYSA-N dioxoosmium Chemical compound O=[Os]=O XSXHWVKGUXMUQE-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 2
- 229910003452 thorium oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- UOFGSWVZMUXXIY-UHFFFAOYSA-N 1,5-Diphenyl-3-thiocarbazone Chemical compound C=1C=CC=CC=1N=NC(=S)NNC1=CC=CC=C1 UOFGSWVZMUXXIY-UHFFFAOYSA-N 0.000 description 1
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- 206010012735 Diarrhoea Diseases 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 240000000233 Melia azedarach Species 0.000 description 1
- 244000082204 Phyllostachys viridis Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 1
- 235000018660 ammonium molybdate Nutrition 0.000 description 1
- 229940010552 ammonium molybdate Drugs 0.000 description 1
- 239000011609 ammonium molybdate Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 239000000645 desinfectant Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- KLXFSKITMRWDPM-UHFFFAOYSA-N diethyl 2-sulfanylbutanedioate Chemical compound CCOC(=O)CC(S)C(=O)OCC KLXFSKITMRWDPM-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- DLAHAXOYRFRPFQ-UHFFFAOYSA-N dodecyl benzoate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC=CC=C1 DLAHAXOYRFRPFQ-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-O hydridodioxygen(1+) Chemical compound [OH+]=O MYMOFIZGZYHOMD-UHFFFAOYSA-O 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 230000003397 luteinic effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000006353 oxyethylene group Chemical group 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- WACRXVBKMRXTCA-UHFFFAOYSA-N platinum sodium Chemical compound [Na].[Pt] WACRXVBKMRXTCA-UHFFFAOYSA-N 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
200400250 五、發明說明(1) ·—" 一、 【發明所屬之技術領域】 本發明係關於研磨組合物,例如,用以研磨磁碟之基 板。 二、 【先前技術】 當從磁碟基板製造磁碟時,基板表面通常經過研磨以 去除unduat ion及使基板表面光滑。包括磨料及研磨加速劑 的研磨組合物通常用以研磨基板表面。 然而’當利用傳統研磨組合物研磨基板表面時,基板 表面周邊部分相對於周圍部分以外的區域而言,周圍部分 研磨得較厲害。此阻礙了磁碟容量的增加。 三、 【發明内容】 本發明之目的在於提供一種研磨組合物,避免當利用 该組合物研磨磁碟基板表面時基板表面周圍部分受到過度 研磨。 為達上述目的,本發明係提供一種研磨組合物,包括 磨料’研磨加速劑及水。研磨組合物更包括一下列通式所 示之化合物: 0 〇 ❶200400250 V. Description of the invention (1)-"Technical field to which the invention belongs" The present invention relates to a polishing composition, for example, for polishing a substrate of a magnetic disk. 2. [Previous Technology] When manufacturing a magnetic disk from a magnetic disk substrate, the surface of the substrate is usually polished to remove unduat ion and smooth the surface of the substrate. Abrasive compositions including abrasives and abrasive accelerators are commonly used to polish substrate surfaces. However, when a conventional polishing composition is used to polish the surface of a substrate, the peripheral portion of the substrate surface is more sharply polished than the peripheral portion. This hinders the increase in disk capacity. III. [Summary of the Invention] The object of the present invention is to provide a polishing composition to avoid excessive polishing of the peripheral portion of the substrate surface when using the composition to polish the surface of a magnetic disk substrate. In order to achieve the above object, the present invention provides an abrasive composition including an abrasive 'grinding accelerator and water. The polishing composition further includes a compound represented by the following general formula: 0 〇 ❶
丨丨 II X-(C-NH-Y-龍-C-(〇-CH2-CH2)n-Z)m x表示聚峻多元醇之基團。^表示一等於聚醚多元醇分子内丨 丨 II X- (C-NH-Y-dragon-C- (〇-CH2-CH2) n-Z) m x represents a group of polyalcohol. ^ Means one equal to the polyether polyol in the molecule
第8頁 200400250 五、發明說明(2) -- 羥基數目的數字。Y表示二價氫碳基。z表示具有一活性氫 原子之單價化合物基團。數字η表示等於或大於3的整數。 本發明也提供一研磨化合物,其包括磨料,研磨加速劑及 水。研磨組合物更包括具衍生自異戊二烯磺酸或其鹽類之 單體單元的聚合物。 ' 、^發,其他觀點及優點可從下列描述内容及所示之圖 式’藉由實施例之舉例說明瞭解。 四、【實施方式】 本發明之第一具體實施例如下: 根據本發明之第一具體實施例,研磨組合物係由下列 通式(1 )所示之化合物,磨料,研磨加速劑及水。 0 0Page 8 200400250 V. Description of the invention (2)-The number of hydroxyl groups. Y represents a divalent hydrogen carbon group. z represents a monovalent compound group having an active hydrogen atom. The number η represents an integer of 3 or more. The present invention also provides an abrasive compound comprising an abrasive, a grinding accelerator, and water. The abrasive composition further includes a polymer having monomer units derived from isoprenesulfonic acid or a salt thereof. ', 发, other views and advantages can be understood from the following description and the illustrated pattern' through the example of the embodiment. 4. Embodiment The first embodiment of the present invention is as follows: According to the first embodiment of the present invention, the polishing composition is a compound represented by the following general formula (1), an abrasive, a grinding accelerator, and water. 0 0
II II X-(C-NH-Y-NH-C-(0-CH2-CH2)n-Z)in 〜(1) 在通式(1)裡,X表示聚醚多元醇之基團。較佳的聚II II X- (C-NH-Y-NH-C- (0-CH2-CH2) n-Z) in ~ (1) In the general formula (1), X represents a group of a polyether polyol. Better poly
醚多元醇係由包括活性氫原子之化合物與環氧烷化物 (alkylene oxide)形成。聚醚多元醇之聚醚鏈較佳包括20 -9〇重量%氧伸乙基(oxyethylene)。111表示一等於聚_多元 醇分子内羥基數目的數字。m較佳為2至8之整數。γ表示二 價氫碳基。Ζ表示具一活性氫屌工 入a 斗屌子之早價化合物基團。γ及z 的具體實例為藉由至少一環氧Γ ^ κ G 及壞乳丙稀與低階醇或The ether polyol is formed from a compound including an active hydrogen atom and an alkylene oxide. The polyether chain of the polyether polyol preferably includes 20 to 90% by weight of oxyethylene. 111 represents a number equal to the number of hydroxyl groups in the poly-polyol molecule. m is preferably an integer from 2 to 8. γ represents a divalent hydrogen carbon group. Z represents an early-valent compound group having an active hydrogen atom and a dipper. Specific examples of γ and z are by using at least one epoxy Γ ^ κ G and bad lactone with lower alcohol or
200400250 五、發明說明(3) 具少於或等於8個碳原子的烷基進行加成反應所形成之加成 聚合物。數字η表示至少為3的整數。 首先,說明上述通式(1 )所示之化合物如下。 通式(1 )所示之化合物係為一種抑制劑,用以當利用 第一具體實施例之研磨組合物研磨磁碟基板表面時,避免 基板表面周圍部分的研磨程度遠高於基板其他部分。 通式(1 )所示之化合物的具體實例為聚胺基甲酸酯表 面活性劑,例如ΑΚΖ0 NOBEL製造之BERM0D0L PUR系列, ASAHI DENKA C0·,LTD 製造之ADEKA NOL UH 系列’,及Ronm & Hass Company 製造。 第一具體實施例之研磨化合物裡,通式(丨)所示之化 合物的數量較佳為0.001 —1重量%,更佳為0 005 — 0.5重 量%,最佳為0.005-0.3重量%。 以下係說明磨料。 當利用第一具體實施例之研磨組合物研磨磁碟基板表 面時’磨料係用以機械性地研磨基板表面。 磨料之具體實例包括鋁氧化物,例如 化鋁,0 -氧化鋁,zc —氧化鋁 α -乳化銘’ (5 -氧 例如氧化矽膠體及發煙氧化石夕; 及二氧化一錦’六方體氧化鈽, 鈽;氧化锆,例如發煙氧化鍅, 锆及無定型氧化鍅;鈦氧化物, 鈦,一氧化鈦,及發煙氧化鈦; /5 -氮化矽,及無定型氮化矽; 及發煙氧化鋁;二氧化矽, 鈽氧化物,例如二氧化鈽 體心氧化鈽,及©心氧化 單斜氧化锆,四角體氧化 例如單氧化鈦,三氧化二 氮化石夕,例如α -氮化石夕, 及碳化矽,例如α — $炭化矽,200400250 V. Description of the invention (3) Addition polymer formed by addition reaction of an alkyl group having less than or equal to 8 carbon atoms. The number η represents an integer of at least three. First, the compound represented by the general formula (1) will be described below. The compound represented by the general formula (1) is an inhibitor, which is used to prevent the polishing degree of the peripheral portion of the substrate surface from being much higher than that of other substrates when the surface of the magnetic disk substrate is polished by the polishing composition of the first embodiment. Specific examples of the compound represented by the general formula (1) are polyurethane surfactants, such as the BERM0D0L PUR series manufactured by AKZO NOBEL, the ADEKA NOL UH series' manufactured by ASAHI DENKA C0, LTD, and Ronm & Manufactured by Hass Company. In the grinding compound of the first embodiment, the amount of the compound represented by the general formula (丨) is preferably 0.001 to 1% by weight, more preferably 0 005 to 0.5% by weight, and most preferably 0.005 to 0.3% by weight. The abrasives are explained below. When the surface of a magnetic disk substrate is polished using the polishing composition of the first embodiment, the abrasive is used to mechanically polish the surface of the substrate. Specific examples of abrasives include aluminum oxides, such as aluminum oxide, 0-alumina, zc—alumina α-emulsification inscriptions (5-oxygen such as silicon oxide colloids and fumed oxidized stone eve; and monolithic dioxide 'hexagonal body Hafnium oxide, hafnium; zirconia, such as fuming hafnium oxide, zirconium and amorphous hafnium oxide; titanium oxide, titanium, titanium monoxide, and fuming titanium oxide; / 5-silicon nitride, and amorphous silicon nitride ; And fuming alumina; silicon dioxide, hafnium oxides, such as osmium dioxide, cardiac hafnium oxide, and carbon dioxide, monoclinic zirconia, tetragonal oxidation, such as titanium oxide, trioxide, such as α -Nitride stone, and silicon carbide, such as α- $ silicon carbide,
200400250 五、發明說明(4) /5-碳化矽及無定型碳化矽。第一具 種類可以只有一種,二種或二種以上。 “之磨枓的 當磨料是二氧化石夕時,以βΕΤ方 均顆粒大小較佳An η「 ^ w積所侍之平 ^υ.005 — 〇·5 //m,更加為 〇·〇ι — ο] 磨料為氧化鋁,氧化昝,巧外从 υ· 3 a m。當 虱化氩,虱化鈦,亂化矽或碳化矽時,+ 雷射竹射顆粒大小分析儀(例如,由Beck_ c〇uit:由 nc.所製造之ls-230 )所測量磨料之平均顆粒大小, 氣1士)較佳為〇· 〇5-2 _,更佳為〇.卜丨.5心。當磨料A :化鈽吩,由掃瞄式電子顯微鏡所測量之磨料的平约顆:為 ^較佳為G.OH·^,更加為q.Q5_g.45^千均顆教 弟—具體實施例之研磨組合物所含磨料的數 40重量%,更佳為卜25重量%。 竿又仫為〇.1~ 以下將說明研磨加速劑。 時 利用第一具體實施例之研磨組合物研磨磁碟基板表 研磨加速劑係用以化學性地研磨基板表面^土 " 亞私一乙酸 於驗酸,乙酸,甘 ’硫代琥珀酸羧基 。較佳的研磨加逮 特別較佳的研磨 葡 ^ 研磨加速劑的具體實例包括蘋果酸,乙醇酸,號$白 ^ 檬酸,馬來酸,衣康酸,丙二酸 1酸,乳酸,苯乙醇酸,反式—丁烯酸, 胺酸’丙胺酸,硫代乙酸,巯基琥珀酸 乙顆’硝酸鋁,硫酸鋁及硝酸鐵(丨丨I ) ::Ϊ J果酸’乙醇酸,琥珀酸及擰檬酸父住的研磨 琥5白酸。第-具體實施例研磨組合物所含研磨加 Μ的種類可以只有一種,二種或更多種。 第一具體實施之研磨組合物所含研磨加速劑的數量較200400250 V. Description of the invention (4) / 5-silicon carbide and amorphous silicon carbide. The first species can be only one, two or more. "When the abrasive is dioxide, the average particle size in terms of βΕΤ is better. An η" ^ w product served by the flat ^ υ.005 — 〇 · 5 // m, more 〇〇〇ι — Ο] Abrasives are alumina, thorium oxide, and 从 · 3 am. When lice argon, lice titanium, messy silicon or silicon carbide, + laser bamboo particle size analyzer (for example, by Beck_ c〇uit: The average particle size of the abrasive measured by ls-230) manufactured by nc., preferably 1 · 5), more preferably 〇. 5-2. When the abrasive A: chemical compound, the average particle size of the abrasive measured by a scanning electron microscope: preferably ^, preferably G.OH · ^, and more preferably q.Q5_g. 45 ^ thousand-hundred gods—specific examples The number of abrasives contained in the polishing composition is 40% by weight, and more preferably 25% by weight. The rod is 0.1 to 1 ~ The following will describe the polishing accelerator. The polishing composition of the first embodiment is used to polish the disk substrate. Surface grinding accelerator is used to chemically grind the surface of the substrate ^ soil " acetic acid in acetic acid, acetic acid, glyceryl thiosuccinic acid carboxylate. Specific examples of grinding accelerators include grinding acid, malic acid, glycolic acid, citric acid, maleic acid, itaconic acid, malonic acid, lactic acid, phenylglycolic acid, and trans-butenoic acid. , Alanine 'Alanine, Thioacetic Acid, Ethyl Mercaptosuccinate, Aluminum Nitrate, Aluminum Sulfate and Iron Nitrate (丨 丨 I) :: Ϊ J Fruit Acid' Glycolic Acid, Succinic Acid and Citric Acid 5 succinic acid. The first embodiment of the grinding composition may include only one, two or more types of grinding plus M. The grinding accelerator of the first embodiment contains a greater amount of grinding accelerator.
1^· ΙΒΗ 第11頁 2004002501 ^ · ΙΒΗ Page 11 200400250
佳為0·01-25重量%,更佳為〇·ι—20重量%,更佳為〇2 —1〇 重量%。 以下將說明水。 在第一具體實施例之研磨組合物裡,水係作為分散介 質及通式(1 )所示之化合物,磨料及研磨加速劑的溶劑1 較佳地,水不含雜質。更定言之,水較佳為經過濾之離子 交換水及蒸鶴水。 第一具體實施例之研磨組合物較佳藉由將通式(丨)所 示之化合物,磨料及研磨加速劑與水混合溶解及分散的方 式製得。槳葉授拌器或超音波分佈器可以用於上述之混合 步驟。 第一具體實施例之研磨組合物的酸鹼值較佳為2 — 7。 第一具體實施例係提供下列優點。 當利用第一具體實施例研磨組合物研磨磁碟基板表面 時,可避免基板表面周圍部分的研磨程度遠高於其他部 分。此有助於磁碟容量的增加。因為研磨組合物包括通式 (1 )所示之化合物,第一具體實施例之研磨組合物會抑制 基板表面周圍部分之研磨情況。通式(丨)所示之化合物適 當減小基板與用以研磨基板之研磨墊之間的摩擦力。根據 推測’減小摩擦力會使得基板表面周圍部分的研磨情況受 到抑制。 當第一具體實施例研磨組合物所含通式(1 )所示之化 合物的數量大於或等於〇.〇〇1重量%時,係提供可充分抑制 基板表面周圍部分過度研磨的研磨組合物。當通式(i )所It is preferably from 0.01 to 25% by weight, more preferably from 0 to 20% by weight, and even more preferably from 0 to 10% by weight. Water will be explained below. In the polishing composition of the first embodiment, water is used as the dispersing medium and the compound represented by the general formula (1), the solvent 1 of the abrasive and the polishing accelerator. Preferably, the water does not contain impurities. More specifically, the water is preferably filtered ion-exchanged water and steamed crane water. The polishing composition of the first embodiment is preferably prepared by mixing, dissolving and dispersing a compound represented by the general formula (丨), an abrasive, and a grinding accelerator with water. A paddle stirrer or an ultrasonic distributor can be used for the above mixing step. The pH of the polishing composition of the first embodiment is preferably 2-7. The first embodiment provides the following advantages. When the surface of the magnetic disk substrate is polished using the polishing composition of the first embodiment, the degree of polishing around the surface of the substrate can be avoided to be much higher than that of other portions. This helps increase disk capacity. Since the polishing composition includes a compound represented by the general formula (1), the polishing composition of the first embodiment can suppress the polishing of the peripheral portion of the substrate surface. The compound represented by the general formula (丨) appropriately reduces the friction between the substrate and the polishing pad used to polish the substrate. It is speculated that the reduction of the frictional force will suppress the polishing of the peripheral portion of the substrate surface. When the amount of the compound represented by the general formula (1) contained in the polishing composition of the first embodiment is greater than or equal to 0.0001% by weight, it is provided a polishing composition capable of sufficiently suppressing excessive polishing of the peripheral portion of the substrate surface. When the general formula (i)
200400250200400250
五、發明說明(6) 示之化合物的數量大於或等於〇 · 〇 〇 5重量%時,可有效抑制 基板表面周圍部分過度被研磨。 當研磨組合物裡通式(1 )所示化合物之數量小於或等 於1重量%時,可避免添加過多化合物所造成之研磨速度驟 減及成本增加。當通式(丨)所示化合物的含量小於或等於 〇· 5重量%時,可更可靠地避免研磨速度驟減。當通式、、 / 1、)所示之化合物含量小於或等於〇· 3重量%時",可^幾乎 很成功地避免研磨速度驟減。 曰當磨料的平均顆粒大小大於或等於0·0 05 (假設磨料 是二氧化矽,氧化锆,氧化鈦,氮化矽或碳化矽),及大( =或等於0 · 0 1 # m (假設磨料是氧化鈽)時,可以避免由於 磨料平均顆粒大小過小而造成研磨速度驟減。當磨料平均 顆粒=小大於或等於〇· 〇1 Am (假設磨料是二氧化石夕),大 於或等於0,1从m (假設磨料是氧化鋁,氧化锆,氧化鈦,氮 化石夕或碳化矽),及大於或等於〇. 〇5 (假設磨料是氧化 錦)時’可更可靠地避免研磨速度驟減。 當磨料的平均顆粒大小小於或等於0 · 5 // m (假設二氧化 石夕或氧化鈽),及小於或等於2 # m (假設磨料是氧化鋁,氧 化錐’氧化鈦,氮化矽或碳化矽)時,可避免由於磨料平< 均顆粒大小過大而造成的經研磨表面之表面粗糙度增加及 形,到痕。當平均顆粒大小小於或等於〇. 3 # m (假設磨料是 一氧化石夕),小於或等於1 · 5 // m (假設磨料是氧化鋁,氧化 錐’氧化鈦,氮化矽或碳化矽),及小於或等於〇 · 4 5 // m (假没磨料是氧化鈽),更可靠地避免經研磨表面之表面5. Description of the invention (6) When the amount of the compound shown in (6) is greater than or equal to 0.05% by weight, it is possible to effectively suppress excessive polishing of the peripheral portion of the substrate surface. When the amount of the compound represented by the general formula (1) in the polishing composition is less than or equal to 1% by weight, it is possible to avoid a sharp reduction in the polishing speed and an increase in cost caused by adding too many compounds. When the content of the compound represented by the general formula (丨) is less than or equal to 0.5% by weight, it is possible to more reliably avoid a sudden decrease in the polishing rate. When the content of the compound represented by the general formula (, // 1,) is less than or equal to 0.3% by weight ", it is possible to almost completely avoid a sudden decrease in the grinding speed. When the average particle size of the abrasive is greater than or equal to 0 · 05 (assuming that the abrasive is silicon dioxide, zirconia, titanium oxide, silicon nitride, or silicon carbide), and large (= or equal to 0 · 0 1 # m (assuming Abrasive is thorium oxide), which can avoid the sharp reduction of the grinding speed due to the average particle size of the abrasive being too small. When the average particle size of the abrasive = small is greater than or equal to 〇 · 〇1 Am (assuming that the abrasive is dioxide dioxide), greater than or equal to 0 , 1 from m (assuming that the abrasive is alumina, zirconia, titanium oxide, nitride nitride or silicon carbide), and greater than or equal to 0.05 (assuming that the abrasive is oxidized), the grinding speed can be avoided more reliably. Less. When the average particle size of the abrasive is less than or equal to 0 · 5 // m (assuming stone dioxide or hafnium oxide), and less than or equal to 2 # m (assuming that the abrasive is alumina, oxide cone 'titanium oxide, nitriding Silicon or silicon carbide), it is possible to avoid the increased roughness and shape of the polished surface due to the abrasive's average particle size being too large. When the average particle size is less than or equal to 0.3 # m (assuming abrasive It's a oxidized stone eve) Less than or equal to 1 · 5 // m (assuming that the abrasive is alumina, oxide cone 'titanium oxide, silicon nitride or silicon carbide), and less than or equal to 0.45 // m (assuming that the abrasive is hafnium oxide), Avoid surfaces with ground more reliably
200400250 五、發明說明(7) 粗糙度提高。 當第一具體實施例研磨組合物中磨料大於或等於〇 · 1重 量% ’可避免由於缺乏磨料而造成研磨速度變小。當磨料 含里大於或專於1重量%時,可更可靠地避免由於缺乏磨料 而造成研磨速度變小。 當第一具體實施例研磨組合物地磨料數量小於或等於 40重可避免由於磨料數量過多而造成黏度增加,研 磨蟄阻基及纽研磨表面之表面缺陷產生。當數量小於或等 於25重s%時’可更可靠地避免黏度增加,研磨墊阻塞及 經研磨表面之表面缺陷產生。黏度的增加會使研磨組合物 的玎加工性降低。 當研磨加速劑為蘋果酸,乙醇酸,琥珀酸,或檸檬酸 時’係可增加研磨速度並抑制在經研磨表面上形成表面缺 陷。當研磨加速劑為琥珀酸時,研磨速度可進一步增加, 並真^靠地抑制在經研磨表面上形成表面缺陷。 當第一具體實施例之研磨組合物所含的研磨加速劑數200400250 V. Description of the invention (7) Roughness is improved. When the abrasive in the abrasive composition of the first embodiment is greater than or equal to 0.1% by weight ', it is possible to avoid a reduction in grinding speed due to lack of abrasive. When the abrasive content is greater than or special to 1% by weight, it is possible to more reliably avoid the reduction in grinding speed due to lack of abrasive. When the number of abrasives in the abrasive composition of the first embodiment is less than or equal to 40 weights, it is possible to avoid the increase in viscosity caused by the excessive amount of abrasives, and to cause surface defects of the abrasive base and the abrasive surface. When the amount is less than or equal to 25% by weight s%, it is possible to more reliably avoid increase in viscosity, blockage of the polishing pad, and generation of surface defects on the polished surface. An increase in viscosity will reduce the workability of the abrasive composition. When the grinding accelerator is malic acid, glycolic acid, succinic acid, or citric acid, it can increase the grinding speed and suppress the formation of surface defects on the polished surface. When the polishing accelerator is succinic acid, the polishing speed can be further increased, and the formation of surface defects on the polished surface can be reliably suppressed. When the number of grinding accelerators contained in the grinding composition of the first embodiment
量大於或等於0.01重量%時,可避免由於缺乏研磨加速劑 而造成研磨速度降低。當含量大於或等於〇 1重量%時,可 更评靠地避免研磨速度降低。當含量大於或等於0·2重量% 時’可非常成功地避免研磨速度降低。 當第一具體實施例之研磨組合物所含的研磨加速劑數 量小於或等於25重量%日夺,可避免由於含量過多而造成成 本增加。當含量小於或等於20重量%時,可更可靠地避免 成本增加。當含量小於或等於1 〇重量%時可非常成功地When the amount is greater than or equal to 0.01% by weight, it is possible to avoid a reduction in the polishing speed due to a lack of a polishing accelerator. When the content is greater than or equal to 0.01% by weight, it is possible to more reliably avoid a reduction in the grinding speed. When the content is greater than or equal to 0.2% by weight, it is very successful to prevent the reduction in the grinding speed. When the amount of the grinding accelerator contained in the grinding composition of the first embodiment is less than or equal to 25% by weight, the cost increase due to excessive content can be avoided. When the content is less than or equal to 20% by weight, cost increase can be avoided more reliably. Very successful when the content is less than or equal to 10% by weight
第14頁 200400250 五、發明說明(8) ^ 避免成本增加。 當弟一具體實施例研磨組合物之酸驗值大於或等於2 時,可避免研磨用之研磨機被研磨組合物磨蝕。 當第一具體實施例研磨組合物的酸鹼值小於或等於7 曰可’可避免由於研磨組合物呈驗性而造成的研磨速度降 低,經研磨表面之表面粗糙度增加及在經研磨表面上形成 刮痕。 以下將說明本發明之第二具體實施例。 第二具體實施例之研磨組合物係由具有衍生自異戊二 稀績酸或其鹽類之單體單元的聚合物,磨料,研磨加逮劑 及水所組成。 β 聚合物係為一種抑制劑,用以當利用第二具體實施例 之研磨組合物研磨磁碟基板表面時,避免基板表面周圍部 分的研磨程度遠高於基板其他部分。 聚合物可以包含並非衍生自異戊二烯磺酸或其鹽類之 單體單元。非衍生自異戊二烯磺酸或其鹽類之單體單元之 實例為衍生自異戊二烯酸或丙烯酸之單體單元。 第二具體實施例之研磨化合物裡,聚合物的量較佳為 〇· 001-1重量%,更佳為〇· 0 0 5-0· 5重量%,最佳為〇 … 〇· 3 重量 %。 · ^ 第二具體實施例之研磨組合物係藉由將聚合物,磨 及研磨加速劑與水混合溶解及分散的方式製得。 7 第二具體實施例之研磨組合物的酸鹼值較佳為7 第一具體實施例研磨組合物裡通式(1 )胼-人 。 所不之化合物Page 14 200400250 V. Description of Invention (8) ^ Avoid cost increase. When the acid value of the grinding composition of the first embodiment is greater than or equal to 2, the grinding machine for grinding can be prevented from being abraded by the grinding composition. When the pH value of the abrasive composition of the first specific embodiment is less than or equal to 7, it is possible to avoid a decrease in the grinding speed due to the inspection of the abrasive composition, an increase in the surface roughness of the ground surface, and an increase in the surface roughness of the ground surface. Scratches are formed. A second specific embodiment of the present invention will be described below. The polishing composition of the second embodiment is composed of a polymer having monomer units derived from isoprene dicarboxylic acid or a salt thereof, an abrasive, a polishing agent, and water. The β polymer is an inhibitor, which is used to prevent the polishing degree of the peripheral portion of the substrate surface from being much higher than that of other substrates when the surface of the magnetic disk substrate is polished by the polishing composition of the second embodiment. The polymer may contain monomer units which are not derived from isoprenesulfonic acid or a salt thereof. Examples of monomer units not derived from isoprene sulfonic acid or a salt thereof are monomer units derived from isoprene acid or acrylic acid. In the grinding compound of the second specific embodiment, the amount of the polymer is preferably 0.001 to 1 wt%, more preferably 0.005 to 0.5 wt%, and most preferably 0 ... 0.3 wt%. . ^ The polishing composition of the second embodiment is prepared by mixing, dissolving and dispersing a polymer, a grinding and grinding accelerator with water. 7 The pH value of the polishing composition of the second embodiment is preferably 7. The general formula (1) 胼 -human in the polishing composition of the first embodiment. All compounds
第15頁 200400250 五、發明說明(9) 在第二具體實施例裡係被聚合物取代。因此第二具體實施 例之研磨組合物可提供除第一具體實施例之優點外的其他 優點,茲列於後。 當利用第二具體實施例之研磨組合物研磨磁碟基板表 面時,可避免基板表面周圍部分研磨程度遠比其他部分 高。第二具體實施例研磨組合物會抑制基板比面周圍部分 過度研磨,乃因研磨組合物包含聚合物。聚合物會降低基 板與用以研磨基板的研磨墊之間的摩擦力,其作用如同通 式(1 )所示之化合物。根據推測,減小摩擦力會使得基板 表面周圍部分的研磨情況受到抑制。 當第一具體實施例研磨組合物裡聚合物的數量大於或 等於0 · 0 0 1重量%時,係提供可充分抑制基板表面周圍部分 過度研磨的研磨組合物。研磨組合物也使基板表面以充分 研磨速度進行研磨。當聚合物的數量大於或等於0,005重 $ %時’可有效抑制基板表面周圍部分被過度研磨。 ^ 當第二具體實施例研磨組合物裡聚合物之數量小於或 等於1重量%時,可避免添加過多聚合物而造成之研磨速度 $》咸&成4本增加。當聚合物的含量小於或等於0. 5重量% 可更可靠地避免研磨速度驟減。當聚合物含量小於或 等於0」3»重量%時,可幾乎很成功地避免研磨速度驟減。 、+ ^ @此項技藝者應瞭解,本發明應當有各種變體而不 & _1¾ a月之精神範疇。尤其,應瞭解本發明當以下列形 式加以具體說明。 第 具體實施例研磨組合物可更包括具有衍生自異丙Page 15 200400250 V. Description of the invention (9) In the second embodiment, it is replaced by a polymer. Therefore, the abrasive composition of the second embodiment can provide other advantages besides the advantages of the first embodiment, which will be listed later. When using the polishing composition of the second embodiment to polish the surface of a magnetic disk substrate, it is possible to avoid that the degree of polishing around the surface of the substrate is much higher than that of other portions. In the second embodiment, the polishing composition suppresses excessive polishing of the substrate around the specific surface because the polishing composition contains a polymer. The polymer reduces the friction between the substrate and the polishing pad used to polish the substrate, and functions as a compound represented by the general formula (1). It is presumed that reducing the friction will suppress the polishing of the peripheral portion of the substrate surface. When the amount of the polymer in the polishing composition of the first embodiment is greater than or equal to 0. 0.001% by weight, a polishing composition capable of sufficiently suppressing excessive polishing of the peripheral portion of the substrate surface is provided. The polishing composition also polishes the substrate surface at a sufficient polishing rate. When the amount of the polymer is greater than or equal to 0,005% by weight, it is effective to suppress excessive grinding of the peripheral portion of the substrate surface. ^ When the amount of polymer in the grinding composition of the second embodiment is less than or equal to 1% by weight, the grinding speed caused by adding too much polymer can be avoided. When the content of the polymer is less than or equal to 0.5% by weight, it is possible to more reliably avoid a sudden decrease in the grinding speed. When the polymer content is less than or equal to 0 "3" wt%, a sharp reduction in the grinding speed can be almost successfully avoided. + ^ @The artisan should understand that the present invention should have various variations without & _1¾ a month of spiritual scope. In particular, it should be understood that the present invention should be specifically described in the following forms. The first embodiment of the abrasive composition may further include
第16頁 200400250 五、發明說明(ίο) 烯磺酸或其鹽類之單體單元的聚合物 第二具體實施例的研磨組合物可更包括化學式(1 )之 化合物。 第一及第二具體實施例之研磨組合物可更包括通常用 於傳統研磨組合物的添加劑。添加劑包括纖維素類,例如 羧曱基纖維素及經基乙基纖維素;水溶性醇類,例如乙 醇,丙醇’及乙二醇;表面活性劑’例如烷基苯碏酸鈉, 及蔡磺酸之曱酿水縮合物;聚有機陰離子材料,例如木質 素續酸鹽及聚丙烯酸醋;水溶性聚合物(乳化劑),例如 聚乙稀醇;螯合劑’例如二曱基乙二肟,雙硫肸,喔星丨 (oxine),乙酿丙嗣’EDTA及NTA ;消毒劑,例如藤酸鈉 及碳酸氫鉀·,無機鹽類,例如硫酸鋁,硫酸鎳,硝酸鋁, 硝酸鎳,硝酸鐵及鉬酸銨;高階脂肪酸胺類;磺酸鹽;防 鏽劑及水溶性加工油。 一 ^發明第一及第二具體實施例之研磨組合物可以是包 括高濃度通式(1 )所示之化合物或聚合物、磨料及研磨加 速劑的儲液。儲液在研磨前先溶解於水。其中,研磨組合 物在儲存及運輸期間的可加工性獲得改善。 第一及第二具體實施例研磨組合物可以用以研磨磁碟 ς =以外的磁碟元件。該情況裡,經研磨表面之邊緣附近丨 σ刀避免比邊緣附近以外的部分研磨得更厲害。 下歹j κ知例及比較實施例更加詳細說明本發明。 速劑氧:鋁,平均顆粒大小為〇.8//m) ’研磨加 ^ ’依照下列表1所示之組成及比例,與離子交Page 16 200400250 V. Description of the Invention (o) Polymers of monomer units of olefin sulfonic acid or salts thereof The polishing composition of the second embodiment may further include a compound of formula (1). The abrasive compositions of the first and second embodiments may further include additives commonly used in conventional abrasive compositions. Additives include celluloses, such as carboxymethylcellulose and transethyl cellulose; water-soluble alcohols, such as ethanol, propanol, and ethylene glycol; surfactants, such as sodium alkyl benzoate, and Tsai Hydrolyzed condensates of sulfonic acids; polyorganic anionic materials, such as lignosaltates and polyacrylic acid vinegar; water-soluble polymers (emulsifiers), such as polyethylene glycol; , Dithizone, oxine, EDTA and NTA; disinfectants, such as sodium vinegar and potassium bicarbonate, inorganic salts, such as aluminum sulfate, nickel sulfate, aluminum nitrate, nickel nitrate , Iron nitrate and ammonium molybdate; higher-order fatty acid amines; sulfonates; rust inhibitors and water-soluble processing oils. The polishing composition of the first and second embodiments of the invention may be a stock solution including a compound or a polymer represented by the general formula (1) at a high concentration, an abrasive, and a polishing accelerator. The stock solution was dissolved in water before grinding. Among them, the workability of the abrasive composition during storage and transportation is improved. The polishing compositions of the first and second embodiments can be used to grind magnetic disk elements other than magnetic disks. In this case, the σ knife near the edge of the polished surface avoids sharpening more than the portion near the edge. The following examples and comparative examples illustrate the present invention in more detail. Proximity oxygen: aluminum, average particle size is 0.8 // m) ‘mill plus ^’ According to the composition and ratio shown in Table 1 below, it interacts with ions.
第17頁 200400250 五、發明說明(11) 換水混合,製備實施例1 -3 1及比較實施例卜4之研磨組合 物。在下列條件下,利用每個實施例研磨組合物研磨磁碟 基板上表面及下表面。 基板:具無電鍍鎳磷塗層之φ3·5 (与95 mm)之基板 研磨機:具P 720mm上下機台之雙面研磨機 研磨墊:BELLATRIX N0048,Kanebo Ltd.製造 研磨墊負荷:100克/平方公分(与10 kPa ) 上機台旋轉速度:24 rpm 下機台旋轉速度:16 rpm 研磨組合物之供料量:1 5 0 m 1 / m i η ❿ 研磨量:基板雙面共3/zm 利用 ADE Phase Shift (U.S)所製造的 MicroXAM 測量 基板被磨光後其周圍部分的滾磨值V r。測量值V i*係代入下Page 17 200400250 V. Description of the invention (11) Water was mixed to prepare the grinding compositions of Examples 1 to 31 and Comparative Example 4. Under the following conditions, the upper and lower surfaces of the magnetic disk substrate were polished using the polishing composition of each example. Substrate: φ3 · 5 (with 95 mm) substrate with electroless nickel-phosphorus coating Polishing machine: Double-sided polishing machine with P 720mm upper and lower table Polishing pad: BELLATRIX N0048, polishing pad manufactured by Kanebo Ltd. Load: 100 g / Cm 2 (with 10 kPa) Rotary speed of the upper machine: 24 rpm Rotary speed of the lower machine: 16 rpm Feed amount of the abrasive composition: 150 m 1 / mi η 研磨 Grinding amount: 3 / zm Micro XAM manufactured by ADE Phase Shift (US) is used to measure the rolling value V r of the peripheral portion of the substrate after it has been polished. The measured value V i * is substituted below
列方程式(2 ),獲得滾磨的下降率。如果滾磨的下降率大 於2 0 % ’則評估為◎,如果滾磨的下降值大於丨0 %但小於 2 0 %,則評估為〇,如果滾磨的下降率大於〇 %但小於 1 0 % ’則評估為△,如果滾磨的下降值小於或等於〇 %,則 評估為X 。結果顯示於表1的”滾磨”欄。 滚磨的下降率[%] = (卜Vr/比較實施例1之Vr) X 1〇〇 滚磨係為顯示基板表面周圍部分之過度研磨程度的參 考指標之一。滾磨之定義如下。如第1 (a)圖所示,從基板Column equation (2) is used to obtain the reduction rate of barrel milling. If the reduction rate of barrel grinding is greater than 20% ', it is evaluated as ◎, if the reduction value of barrel grinding is greater than 0% but less than 20%, it is evaluated as 0, and if the reduction rate of barrel grinding is greater than 0% but less than 10 % 'Is evaluated as △, and if the reduction value of the barrel grinding is less than or equal to 0%, it is evaluated as X. The results are shown in the "Rolling" column of Table 1. Reduction rate of barrel grinding [%] = (Vr / Vr of Comparative Example 1) X 100 The barrel grinding is one of the reference indicators for showing the degree of excessive grinding of the peripheral portion of the substrate surface. The definition of barrel grinding is as follows. As shown in Figure 1 (a),
第18頁 200400250 五、發明說明(12) 表面邊緣往内算起0 · 3 0 m m設為點A,從基板表面邊緣往内 算起3. 8 0 mm設為點B。滾磨定義為連接點a及B之交叉曲線 與連接點A及點B之直線之間的最大距離。 利用Mi croXAM測量戳磨值Vd基板經過研磨後的周圍部 分。所測得V d值代入下列方程式(3 ),獲得戳磨下降率。 如果戳磨的下降率大於20 %,則評估為◎,如果戳磨的下 降值大於1 0 %但小於2 〇 %,則評估為〇,如果戳磨的下降 率大於0 %但小於1 〇 %,則評估為△,如果戳磨的下降值小 於或等於0 %,則評估為X 。結果顯示於表1的"戳磨”欄。 戳磨的下降率[°/G] = (l—Vd/比較實施例1之Vd) X 100〜(3 ) 滅磨係為顯示基板表面周圍部分之過度研磨程度的參 考指標之一。戳磨之定義如下。如第丨(b)圖所示,從基板 表面邊緣往内算起4 · 3 0 mm設為點C,從基板表面邊緣往内 异起3. 30 mm設為點D,及從基板表面邊緣往内算起〇. 30 mm 設為點E。線L為連接點c及點D之剖面曲線,由最少二次方 方法獲得。位於線L上,從基板周圍部分往内算起〇· 3〇mm的 底設為點E’ 。戳磨定義為點e到點E,之間的距離。 根據下列方程式(4 )獲得研磨基板的研磨速度。如果 研磨速度大於或等於〇 · 7 〇 # m / m i n,則評估為◎,如果研磨 速度大於或等於〇·65 //m/min但小於0·70 //m/min,則評估 為〇’如果研磨速度大於或等於0·6〇 //m/min但小於〇_65 /zm/min,則評估為△,如果研磨速度小於〇6〇 ,Page 18 200400250 V. Description of the invention (12) 0 · 30 mm from the edge of the surface is set to point A, and 3.8 mm from the edge of the substrate is set to point B. Barreling is defined as the maximum distance between the intersection curve connecting points a and B and the straight line connecting point A and point B. The peripheral portion of the Vd substrate after polishing was measured using the MicrocroxAM. The measured V d value is substituted into the following equation (3) to obtain the rate of descent. If the reduction rate of the stabbing is greater than 20%, it is evaluated as ◎, if the reduction value of the stabbing is greater than 10% but less than 20%, it is evaluated as 〇, and if the reduction rate of stabbing is greater than 0% but less than 10% , It is evaluated as △, and if the drop value of the grinding is less than or equal to 0%, it is evaluated as X. The results are shown in the " Polishing " column of Table 1. The reduction rate of poking [° / G] = (l-Vd / Vd of Comparative Example 1) X 100 ~ (3) The extinguishing system is around the surface of the display substrate. One of the reference indicators of the degree of excessive grinding. The definition of stamping is as follows. As shown in Figure 丨 (b), 4 · 30 mm from the edge of the substrate surface is set to point C, and Inner heterogeneity 3.30 mm is set to point D, and 0.30 mm from the edge of the substrate surface is set to point E. Line L is the cross-sectional curve connecting point c and point D, which is obtained by the least square method Located on the line L, the bottom of 0.30 mm from the peripheral part of the substrate is set to point E '. The poking is defined as the distance between point e and point E. The polishing is obtained according to the following equation (4) The polishing speed of the substrate. If the polishing speed is greater than or equal to 0.7 · 0 # m / min, it is evaluated as ◎, and if the polishing speed is greater than or equal to 65 · m // min but less than 0 · 70 // m / min, Then it is evaluated as 0 '. If the grinding speed is greater than or equal to 0.60 // m / min but less than 0-65 / zm / min, it is evaluated as △, and if the grinding speed is less than 060,
第19頁 200400250 五、發明說明(13) 則評估為X 。結果顯示於表1的”研磨速度π欄。 研磨速度[//m/min]=基本因研磨而減少的重量[g]/ (基板 的研磨面積[c m2 ] X鎳填鍍層密度[g / c m3 ] X研磨時間 [min] X 10000 〜(4) 表1 研磨加速劑 抑fJ劑 值 滾 磨 a 磨 研 磨 速 度 種婊 含f (重f %) 種 顗 轱度 (cps) 含f it±%) 兗施例i 琥珀破 0. L25 A 9500 0.0025 3 5 ◎ ◎ Δ 實施例2 琥功鲅 0. 25 A 1809500 0.00125 3,5 〇 〇 〇 5Γ蜷例3 琥珀醆 0 25 A 9500 0,0025 3.5 ◎ ◎ Δ (Page 19 200400250 V. The description of the invention (13) is evaluated as X. The results are shown in the "Grinding speed π" column of Table 1. Grinding speed [// m / min] = weight that is basically reduced due to polishing [g] / (polished area of the substrate [c m2] X density of nickel plating [g / c m3] X Grinding time [min] X 10000 ~ (4) Table 1 Grinding accelerator fJ agent value Rolling a Grinding speed type (including f (weight f%) Species degree (cps) including f it ± %) 兖 Example i Amber broken 0. L25 A 9500 0.0025 3 5 ◎ ◎ Δ Example 2 Su Gong 鲅 0.25 A 1809500 0.00125 3,5 〇〇〇5 Γ Example 3 Amber 醆 0 25 A 9500 0, 0025 3.5 ◎ ◎ Δ (
第20頁 200400250 五、發明說明(14) f泡例4 坡jr竣 0.25 A 9500 0. 0025 3.5 ◎ ◎ Δ 實绝例5 坑珀破 0.375 A 9500 0. 0025 3.5 ◎ ◎ Δ r.廷例δ 玻;妫埏 0.25 A aoooo 0, 0025 3.5 ◎ ◎ 〇 實铯洌7 坑珀谜 0 25 A 8500 0 0025 3.5 ◎ ◎ 〇 賞砲例8 藏果鲅 0. 25 A 9500 Q. 0025 3 0 ◎ ◎ Δ Τ艳例9 淳檬缄 0 25 A 9500 0. 0025 2.4 o o Δ 贫总例10 乙SI破 0.5 A 9500 0.0025 2 9 ◎ ◎ Δ r总糾u 号來鲅 0, 25 A 9500 0. 0025 2.2 ◎ ◎ Δ 貧绝例12 农康谜 0. 25 A 9500 0.0025 2.9 〇 o △ 貪绝扣U3 丙二破 0. 25 A 9500 0.0025 2.4 ◎ © △ 14 泛胺二 乙狭 0.25 A 9500 0. 0025 2.8 ◎ ◎ △ 贫讫例i5 额基珑 0.25 A 9500 0. 0025 3. L 〇 o a 贫絶例 羧基乙 基 硫ί戈疏 0.25 A 9500 0. 0025 3.2 o 〇 ◎Page 20, 200,400, 250 5. Description of the invention (14) f bubble example 4 slope jr completed 0.25 A 9500 0. 0025 3.5 ◎ ◎ Δ Exceptional example 5 pit break 0.375 A 9500 0. 0025 3.5 ◎ ◎ Δ r. Court case δ Glass; 妫 埏 0.25 A aoooo 0, 0025 3.5 ◎ ◎ 〇 Real cesium 洌 7 Poper mystery 0 25 A 8500 0 0025 3.5 ◎ ◎ 〇 Reward example 8 Tibetan fruit 鲅 0.25 A 9500 Q. 0025 3 0 ◎ ◎ Δ Τ Yan Example 9 0 0 25 A 9500 0. 0025 2.4 oo Δ Lean General Example 10 B SI break 0.5 A 9500 0.0025 2 9 ◎ ◎ Δ r total correction number to 0, 25 A 9500 0. 0025 2.2 ◎ ◎ Δ Poverty Exemption 12 Mystery of Nongkang 0. 25 A 9500 0.0025 2.9 〇o △ Unsatisfactory Deduction U3 Propane Break 0. 25 A 9500 0.0025 2.4 ◎ © △ 14 Panthenamine Diethyl Narrow 0.25 A 9500 0.025 2.8 ◎ ◎ △ Poor example i5 Ekijiron 0.25 A 9500 0. 0025 3. L 〇oa Poor example carboxyethyl ethyl thiophene 0.25 A 9500 0.025 3.2 o 〇 ◎
200400250 五、發明說明(15) 尤绝阑L7 iS 1 A δ500 0 0025 2 8 ◎ ◎ Δ f泡例L8 0 L25 BL L80 0.0025 3 5 ◎ ◎ ◎ 矿铯阑19 0 25 BL L80 0 0025 3 5 ◎ ◎ ◎ r絶阑2〇 0 375 BL m 0. 0025 3.5 ◎ ◎ ◎ 2L 0. 25 BL L80 0.0075 3.5 ◎ ◎ ◎ f讫阑22 琥珀踺 0. 25 B1 180 0.002 3.5 ◎ ◎ ◎ f总例23 琥珀破 0 25 B2 90 0.0025 3 5 ◎ ◎ ◎ 贫拖例24 狰果缄 0.25 BL 180 0.0025 3.0 ◎ ◎ 〇 t^tf} 25 稈檬醆 0. 25 BL 180 0. 0025 2. 4 〇 o o 26 乙酵踺 0.5 EL m 0.0025 2.9 ◎ ◎ 〇 r铯洌2 了 馬來躂 0,2& BL L80 0. 0025 2.2 ◎ ◎ o 贫跑阑28 农康鍵 0.25 Βί LBO 0.0025 2.9 〇 o ◎ 贫施的29 内二破 0.25 Β1 m 0.0025 2.4 ◎ © o r铯例3〇 眨胺二 乙減 0. 25 BL m Q.0025 2.8 ◎ ◎ o 實绝抝3i 桴懞鍵 is 1 EL L80 0.0025 3.8 ◎ ◎ o 比較r铯例1 琥鉑孩 0.25 - - - 3 5 X X o (200400250 V. Description of the invention (15) You Lian L7 iS 1 A δ500 0 0025 2 8 ◎ ◎ Δ f bubble example L8 0 L25 BL L80 0.0025 3 5 ◎ ◎ ◎ ore cesium diaphragm 19 0 25 BL L80 0 0025 3 5 ◎ ◎ ◎ r diarrhea 20000 375 BL m 0. 0025 3.5 ◎ ◎ ◎ 2L 0. 25 BL L80 0.0075 3.5 ◎ ◎ ◎ ◎ f22 22 amber 0.25 0 B1 180 0.002 3.5 ◎ ◎ ◎ f General example 23 amber Break 0 25 B2 90 0.0025 3 5 ◎ ◎ ◎ Leakage example 24 Capsule 0.25 BL 180 0.0025 3.0 ◎ ◎ 〇t ^ tf} 25 stalk lemon 0.25 BL 180 0. 0025 2. 4 〇oo 26 acetic acid踺 0.5 EL m 0.0025 2.9 ◎ ◎ 〇r cesium 洌 2 Malay 跶 0.2 & BL L80 0. 0025 2.2 ◎ ◎ o Poor running stop 28 Nongkang key 0.25 Β LBO 0.0025 2.9 〇o ◎ Within 29 of poor application Two breaks 0.25 Β1 m 0.0025 2.4 ◎ © or cesium example 30 amine diethyl reduction 0.25 BL m Q.0025 2.8 ◎ ◎ o 拗 i 3i 桴 Mongolia key is 1 EL L80 0.0025 3.8 ◎ ◎ o Compare r cesium Example 1 Sodium platinum 0.25---3 5 XX o (
第22頁 200400250 五、發明說明(16) 在 之化合 抑 具3 0重 值。當 旋轉器 與丙稀 共聚物 雖 以限定 精神和 專利保 為準。 表1所不之抑制劑種類欄裡,A表示通 物,B1異戊二婦石黃酸與丙歸酸共 斤厂 磧酸與異戊二烯之共聚物。,、來物,Μ表示異 攔裡的數值係為利用BH型旋轉黏 量 生組成及保持在25 t之抑制劑水溶液的數 測里通式(1 )所示之化合物的黏度時,使用N〇 6 且No· 6的旋轉速度為10 rpm。當測量異戊二烯旙酸 酸共聚物的黏度,及測量異戊二烯磺酸與異戊二烯 的黏度時,No· 3旋轉器而其旋轉速度為62· 5 rpm。· 然本發明之較佳實施例揭露如上所述,然其並非用 本發明,任何熟習相關技藝者,在不脫離本發明之 範圍内,當可作些許之更動與潤飾,因此本發明之 °蔓範圍須視本說明書所附之申請專利範圍所界定者Page 22 200400250 V. Description of the invention (16) The combination of the two has a value of 30. When the spinner and acrylic copolymer are subject to limited spirit and patent protection. In the column of the types of inhibitors listed in Table 1, A represents a common substance, and B1 is a copolymer of isoprene luteinic acid and valeric acid and acetic acid and isoprene. ,, 来 物 , M indicates that the value of isoblock is based on the viscosity of the compound represented by general formula (1) when the viscosity of the compound represented by general formula (1) is measured using a BH-type rotational viscosity measuring composition and an inhibitor aqueous solution maintained at 25 t. The rotation speed of No. 6 is 10 rpm. When measuring the viscosity of the isoprene sulfonic acid copolymer, and measuring the viscosity of isoprene sulfonic acid and isoprene, the No. 3 rotator has a rotation speed of 62.5 rpm. · Although the preferred embodiment of the present invention is disclosed above, it is not the present invention. Any person skilled in the related arts can make some changes and retouches without departing from the scope of the present invention. The scope of the vine must be as defined by the scope of the patent application attached to this specification.
200400250 圖式簡單說明 第1(a)圖係說明滚磨(roll-off )情況,及 第1(b)圖係說明戳磨(dub-off )情況。200400250 Brief Description of Drawings Figure 1 (a) illustrates the roll-off situation, and Figure 1 (b) illustrates the dub-off situation.
第24頁Page 24
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JP4068499B2 (en) * | 2003-05-09 | 2008-03-26 | 株式会社フジミインコーポレーテッド | Polishing composition |
US20050139119A1 (en) * | 2003-12-24 | 2005-06-30 | Rader W. S. | Polishing composition |
US20080193801A1 (en) * | 2004-08-30 | 2008-08-14 | Showa Denko K.K. | Glass Substrate for Magnetic Recording Medium and Magnetic Recording Medium |
JP2006099949A (en) * | 2004-08-30 | 2006-04-13 | Showa Denko Kk | Glass substrate for magnetic recording medium and magnetic recording medium |
JP4667848B2 (en) * | 2004-12-13 | 2011-04-13 | 花王株式会社 | Polishing liquid composition for glass substrate |
JP4637003B2 (en) * | 2005-11-11 | 2011-02-23 | 花王株式会社 | Manufacturing method of hard disk substrate |
US7655057B2 (en) * | 2005-08-31 | 2010-02-02 | Fujimi Incorporated | Polishing composition and polishing method |
JP2007063440A (en) * | 2005-08-31 | 2007-03-15 | Fujimi Inc | Polishing composition and polishing method |
CN1986612B (en) * | 2005-12-22 | 2012-07-25 | 花王株式会社 | Polishing composition for glass substrate |
TWI402335B (en) * | 2006-09-08 | 2013-07-21 | Kao Corp | Polishing composition |
JP5957292B2 (en) | 2012-05-18 | 2016-07-27 | 株式会社フジミインコーポレーテッド | Polishing composition, polishing method using the same, and substrate manufacturing method |
KR101353315B1 (en) * | 2013-08-07 | 2014-01-21 | 소문식 | Composition for cutting wheel and cutting wheel comprising the same |
JPWO2020009054A1 (en) * | 2018-07-04 | 2021-08-05 | 住友精化株式会社 | Polishing composition |
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JP3891604B2 (en) * | 1996-04-17 | 2007-03-14 | 花王株式会社 | Abrasive composition and polishing method using the same |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
JP4250831B2 (en) * | 1999-06-23 | 2009-04-08 | Jsr株式会社 | Cleaning fluid for semiconductor parts |
MY128169A (en) * | 1999-06-28 | 2007-01-31 | Showa Denko Kk | Abrasive composition for substrate for magnetic recording disks and process for producing substrate for magnetic recording disk. |
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US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
JP4238951B2 (en) * | 1999-09-28 | 2009-03-18 | 株式会社フジミインコーポレーテッド | Polishing composition and method for producing memory hard disk using the same |
US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
JP2003313542A (en) * | 2002-04-22 | 2003-11-06 | Jsr Corp | Aqueous dispersion for chemomechanical polishing use |
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CN100347227C (en) | 2007-11-07 |
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GB2390370B (en) | 2006-10-11 |
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