TWI301588B - Semiconductor module and production method therefor and module for ic cards and the like - Google Patents

Semiconductor module and production method therefor and module for ic cards and the like Download PDF

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Publication number
TWI301588B
TWI301588B TW091134771A TW91134771A TWI301588B TW I301588 B TWI301588 B TW I301588B TW 091134771 A TW091134771 A TW 091134771A TW 91134771 A TW91134771 A TW 91134771A TW I301588 B TWI301588 B TW I301588B
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Taiwan
Prior art keywords
circuit board
printed circuit
semiconductor
semiconductor wafer
semiconductor module
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TW091134771A
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English (en)
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TW200301871A (en
Inventor
Nishikawa Masataka
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Sharp Kk
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Publication of TW200301871A publication Critical patent/TW200301871A/zh
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Publication of TWI301588B publication Critical patent/TWI301588B/zh

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    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
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Description

1301588 ⑴ 玖、發明説明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) (1) 技術領域 本發明係關於有一 1C晶片配置其上的一種模組，以及其 組裝時的封裝技術。具體而言，本發明係關於一半導體模 組’其可縮減厚度而仍能提供其周邊零件對環境條件的高 4賴度，且係關於其生產方法以及IC卡與其類似物之模組。 (2) 先前技術 近來已出現各種配備半導體積體電路裝置的1〇卡，用於 諸如巴士、鐵路等大眾運輸工具之通勤票，以及包括銀行 ***之類金融卡或身分識別卡。由於_IC卡本身具有磁 卡所無的資料處理功能以及高度保全功能，故此優點使其 應用面更為寬廣。 ' 1C卡可分為 P接觸型、非接觸型以及同時呈有^ 述二型功能的組合型。就第一型（接觸型）IC卡而言;、在） 配備有 一 IC 晶片的一>fHi| ^ a lL a
乃旳側之月面具有一些電極，此類電極S 3 =巧取器/寫入器裝置進行機械接觸，並邮 A 」h子。反之，就第二型（非接觸型）1C卡而·! ’二一天線(諸如—捲繞型嵌入物或蝕刻線圈型嵌入物 ’並透過該天線接收電磁波’以非接觸方式自-讀^ 寫入盗裝置獲取供電並與之交換資料。 ° 情況下Ic卡皆係置於衣服口袋、皮夾、通勤 =㈣之中，故對其可攜性有極強烈需求。 攜性’則必須使IC卡模組變薄， ” ㈣卡才較易攜帶。為達成薄型㈣；肖於一 乂，寻生、σ構的要求，則必須使該 1301588
1C卡模組的組成要素（即其印刷線路板、IC晶片、焊接線（ 尤其線環的南度）及密封樹脂）越薄越好。 然而，當已使該印刷電路板變薄，則安裝IC晶片後之處 理效能將在模組製造的封裝過程中惡化。結果，目前的生 產極限約為100 μπι(微米）。當使用諸如QFp(Quad Flat Package，四面平整包裝）、S0P(Slnall 0utline Package，小 型包裝）、CSP(Chip Size Package，晶片尺寸封裝）等的典型 半導體封裝之ic晶片時，其產品必然會變成最小約2〇〇 μπι 厚以上。線環形成的高度約離1〇晶片頂上15〇 ，故當以 樹脂密封該ic晶片與焊線時，必須形成由IC晶片表面算起 約200 μηι以上厚度的樹脂填料。 若企圖使這些元件變薄，則該1(：晶片將因彎折負載而斷 裂，並因此引起使該IC片之電路故障的嚴重缺陷。當縮減 密封樹脂的厚度時，若其環氧樹脂所含填充物量較低，則 整個模組將因樹脂中的應力而變得容易變形，因此將使一 接觸型1C卡的電氣端子表面呈現不平整光滑的現象，造成 其與項取盗/寫入器裝置之電性連接端子間的接觸失效。另 -方面，若該環氧樹脂包含大量填充物，則其將展現不良 的流動性，因而產生未填充部分。 在曰本專利申凊公開案號Hei i 以下稱為第一 項先前技術）以及日本專射請公開案號Hei 11 238744(以 下稱為第二項先前技術)等之中’已揭示用以產生具有必要 之機械強度的薄型職組的密封技術。具體而纟，日本專 J申請公開案號Hei 11 _296638(第-項先前技術）所揭示之 -6 - 1301588
(3) 技術，為在一凹陷之外殼内密封一 Ic晶片及其周邊零件， 並在其内保留一空洞。 圖1顯示此種技術的一模組之斷面結構。本圖中所示模組 具有一 1C晶片4，其係配置於一印刷線路板2〇之上，同時IC 曰曰片4的各電極係藉導線5與印刷線路板2〇的預設端子電性 連接，再由一凹陷的外殼17將其覆蓋，以隔離並保護…晶 片4與導線5避免其與外部空氣接觸。在此項技術中，凹陷 之外殼17係使用彈性係數較單結晶矽為高的材料，以保護 1C晶片4並強化該模組。 然而，在此項先前技術中，係僅將印刷線路板2〇與凹陷 之外殼17間的介面黏合以包裝該模組，而IC晶片4與導線5 則仍處於該空洞中。當此種結構的模組形成一…卡模組卡 ，並對其實施變形、扭轉及其他機械測試時，印刷線路板 20與凹陷知外殼17間的介面可能破裂，使水可輕易由裂縫 流入。另外，若係採用諸如玻璃環氧化物、聚醯亞胺 (polyimide)之類的一有機基板，則水氣吸收、環境溫度降 低以及内部空氣的凝結等的重複循環將導致水氣凝結:該 空洞空間内1C晶片4及其周邊零件的四周，因該有機基板I 身即易於讓水氣穿透。因此，為改善其機械強度，以對抗 彎折、變形、扭曲等，即必須提供一種機械強度夠高的結 構。 曰本專利申請公開案號Hei 11_238744(第二項先前技術） 中揭示了 一種密封技術，其中有一 c晶片4以一未固化密封 树月曰封I，並以一圓盤（稱為一頂箔（t〇pping f〇il) 1 8)覆蓋後 1301588 再予固化’該圓盤係藉一衝模工具由一環氧化物或聚醯亞 胺樹脂薄膜切割而得。圖2顯示此種先前技術模組結構的斷 面。本圖中所示的模組之建構方式為··在-印刷線路板20 上配置一1C晶片4 ;將印刷線路板20之各端子與1C晶片4的 預叹電極電性連接；於該晶片上塗佈一液態樹脂i 9然後放 置一薄片，即頂箱18,以獲得一光滑表面。 、依據此種技術，可藉放置頂箱18於液態樹脂19上，以改 善該模組厚度的可控制性。另外，頂箔18亦可作為一補強 疋件，從而改善對衝擊的抵抗能力。 在曰本專利申請公開案號Hei 11-296638(第一項先前技 峨揭示的方法中，在使用倒裝晶片裝配程】= (hip On board，晶片直接裝於基板）導線焊接程序將IC晶 =4裝配於印刷線路板20上之後，在該印刷線路板上的該IC 曰曰片4與其周邊零件係由凹陷之外殼丨7沿著其邊緣密封。 不過，雖然凹陷之外殼17係由具有極低滲透性之材料所 構成，但若凹陷之外殼17内部有一空洞，則水氣將透過黏 =表面或透過印刷線路板2〇(其通常係由玻璃環氧化物、聚 j亞fee或其他有機化合物構成）渗透，且該空洞中的溫度亦 ㈢^加。例如，若該模組係在30°C、相對濕度（RH)70%的 ^部環境下使用，則凹陷之外殼17内的水氣很快就會與外 部環境者相當。當由此種狀態冷卻時，其中的水氣將會凝 結，並造成1C晶片4表面互連電路以及印刷線路板2〇中的漏 電’導致操作錯誤。 在曰本專利申請公開案號Hei 11-238744(第二項先前技 1301588
(5) 術）中，頂箔1 8係由一衝模工具所切割，再將其置放並固化 以完成密封。此頂箔18係作為調整該IC卡模組樹脂密封的 间度並提供補強功能的用途，但並不會提供任何對外界環 境的防護。 發明内容 本發明係針對上述問題所設計，因此，本發明的一項目 標為提供一種半導體模組，其能防止當暴露於一嚴厲環境 (諸如高溫高濕之儲存環境、高溫高濕並有一偏壓之環境、 加壓洛Π裱境等，相當於對IC模組環境耐受試驗的條件） 時發生故障以及水氣滲透的狀況，並能在實際環境耐受試 f中減少故障的發生，從而改善產能並改善在實際使用環 ^中的信賴度。亦即，本發明之目標為提供此種半導體模 組及其生產方法，以及積體電路卡與其類似物之模組。 為達成以上目標，本發明之内容如下·· 依據本發明的第一項觀點，一半導體模組包括：由一絕 緣體，成且在其兩侧各有導體圖案形成的—印刷線路板， 以f安裝於該印刷線路板上且係由一樹脂所密封的一半導 體晶片，其特徵為，在該半導體晶片背對該印刷線路板一 側的表面上，黏接有一金屬片或水氣滲透阻擋片。 、曾-康本么月之苐一項觀點，具有上述第一項特徵的該半 導體模組進-步包括天線連接端子，其係配置於該印刷線 路板具有该半導體晶片之表面，及/或包括配置於安裝有該 半導體晶片表面的背面底下之電性連接電極。 依據本發明之第三項觀點，具有上述第一項特徵的該半 (6) 1301588
導體模組之特徵為， 銘或鋼所構成。 該金屬片係由不銹鋼、42鐵鎳合金、 依據本發明之第四項 . 導體握如—⑼ /、旁上迷弟一項特徵的该+ 成。”、徵為，水氣渗透阻擔片係由氧化銘陶究所構 依據本發明 導體之特徵為 或更薄。 之第五項觀點，具有上述第一項特徵的該半 ’該金屬片或水氣滲透阻擋片的厚度為1〇〇
導:? 二發明之第六項觀點，具有上述第-項特徵的該 該金屬二特徵為，有一黏接層用以黏接該半導體晶片 ^更薄玄水氣滲透阻擋片，且該黏接層的厚度為30 依據本發明之第 導體模組之特徵為 物所構成。 七項觀點，具有上述第一項特徵的該半 ’該金屬片未黏接之表面係凹口與突出
:本發明之第八項觀點，將一半導體晶片裝配於由一 :二-構成且兩側各有導體圖案形成的一印刷線路板，並 丰：配：该半導體晶片的該印刷線路板以一樹脂密封的一 ¥體杈、、且生產方法所包括步驟為··將該半導體晶片裝配 P刷線路板上；使用導線進行此二者間之電性連接； ^黏接層在一金屬片或一水氣滲透阻擋片與該半導體晶 表面之間黏接，然後在該印刷線路板裝配有該半導體晶 片的一側以一封膠樹脂覆蓋密封。 依據本發明之第九項觀點，將一半導體晶片裝配於由一 -10- 1301588
⑺ 絕緣體構成且兩側各有導體圖案形成的一印刷線路板，並 將裝配有該半導體晶片的該印刷線路板以一樹脂密封的一 半導體模組生產方法所包括步驟為··在黏接於該半導體晶 片表面上的該金屬片或水氣滲透阻擋片的一侧上形成凹口 與突出物，然後在該印刷線路板裝配有該半導體晶片的一 侧以一封膠樹脂覆蓋密封。 依據本發明之第十項觀點，具有上述第八項特徵的半導 體模組生產方法之特徵為，該印刷線路板與該半導體晶片 間的導線電性連接係經由正常導線焊接，或首先以球形焊 接（ball bonding)將導線焊接於該半導體晶片之各電極上， 然後再以汀合式焊接（stitch b〇nding)將各導線焊接於該印 刷線路板預設之端子上。 依=本發明之第十_項觀點，具有上述第九項特徵的半 導體杈組生產方法之特徵為，該印刷線路板與該半導體曰 片間的導線電性連㈣經由正常導線焊接，或首先以球: ^將導線焊接於該半㈣晶片之各電極上，^後再以訂 «式焊接將各導線焊接於該印刷線路板預設之端子上。 2本發明之第十二項觀點，具有上述第人項特徵的半 導體模組生產方法之姑^ μ & . 特徵為，该印刷線路板與該半導體晶 、、¥線電14連接係經由反向導線焊接，或首 铁$ =㈣接將‘線焊接於該印刷線路板預設之端子上， =再以訂合式焊接將各導線焊接於該半導體晶片之各電 依據本發明之第十三項觀點 具有上述第九項特徵的半 1301588
(8) 導體模組生產方法之特徵為，該印刷線路板與該半導體晶 片間的導線電性連接係經由反向導線焊接，或首先以球形 焊接將導線焊接於該印刷線路板預設之端子上，然後再以 訂合式焊接將各導線焊接於該半導體晶片之各電極上。 依據本發明的第十四項觀點，一種包含一半導體模組的 1C卡之類模組，其包括：由一絕緣體構成且在其兩侧各有 導體圖案形成的一印刷線路板，以及安裝於該印刷線路板 上且係由一樹脂所密封的一半導體晶片，其中在該半導體 晶片背對該印刷線路板一側的表面上，黏接有一金屬片或 水氣滲透阻擋片。 此處，該1C卡之類模組可能為一非接觸型、接觸型或同 時具有前述二型功能的組合型。該IC卡之類模組係主要用 於1C卡模組中，但其用途不應僅限於此，而可應用於其他 目的。 ’、 實施方式 接著請參考圖3及其他圖式，其中將說明依據本發明的半 導體模組和其生產方法以及一 IC卡之類模組等之各種較佳 具體實施例。 一雙面印刷線路板20包括用於聚醯亞胺雙面互連之一絕 緣層8，由玻璃環氧化物灌注以環氧樹脂製成，厚度為別 至100 μιη ,以及黏接於該絕緣體兩側諸如銅箔之類的一導 體’其可由#刻或其他程序圖案化（形成下述模組中的天線 連接端子7及印刷線路板20之預設端子11)(>此導體之特定 厚度為8至20 μπι。 -12- 1301588
在此項具體實施例中，係以兩面具有12 μπι厚度之導體層 的一玻璃環氧化物基板作為範例，但只要其落於上述範圍 ，即不應將該導體限制於特定厚度。 在印刷線路板20上鑽有若干貫通孔9以作兩側導體層間 的電性連接，並於兩側以電鍍形成1〇 μηι厚度的導體層。如 此形成的導體層再由蝕刻之類的方法圖案化，以完成印刷 線路板2 0。 在此項具體實施例中所示的印刷線路板20具有80 (^⑺厚 度的一絕緣層8。 由一典型晶圓製造程序處理的1C晶片4具有400至700 μηι 的厚度’但就圖9中所示的一 1C卡模組16而言，其晶圓底部 經過研磨，使所產生之1C晶片4具有50至200 μπι的厚度。以 下將以厚度研磨至80 μπι的一晶圓作為實例說明。在該晶圓 底部先以一厚度10至50 μηι的薄膜黏著劑1〇塗佈。以一鑽石 刀之類將該晶圓切割成個別晶片，再將包含黏著劑丨〇的每 一 1C晶片4裝配於印刷線路板2 0上。黏著劑1 〇可使用熱固化 樹脂、熱熔塑膠樹脂或二者之混合物，並於必要溫度及壓 力下塗敷。 用於1C晶片4的黏著劑10可事前塗敷於印刷線路板2〇之 預设位置上。此處用於1C晶片4的黏著劑1 〇之特定厚度為3 〇 μπι。 圖8之結構斷面圖顯示本發明的一半導體模組16，嵌入於 一 1C卡基板15内，圖9則為圖8所示之1C卡的一平面圖。 接著，使用直徑20至30 μηι的極細鋁或金質導線，將IC晶 1301588
片4的預設電極連接至印刷線路板2〇上的預設端子u。在圖 3所示之組態中，使用金質導線5的導線焊接係由一般稱作 「正常焊接」的方法所執行。在此方法中，係先將金質導 線5連接至1C晶片4的一預設電極處，再將導線5的另一端連 接至印刷線路板20的相關端子^上。當使用金質導線5時， 需先在1C晶片4的預設電極上形成金球。 當然，亦可使用反向焊接，即首先以球型焊接將導線5連 接至印刷線路板20之預設端子丨丨處，然後再以訂合式焊接 將導線5的另一端連接至…晶片4的預設電極4上。在此狀況 中，需先使金球形成於印刷線路板2〇之預設端子^上，以 讓该等導線連接。採用此種反向焊接程序，可降低導線5 的焊接高度（線環高度），如圖4中所示。由圖3與4比較可明 顯看出，由於1C晶片4的電極側並未配置任何金球，故可在 1C晶片4的整個表面上配置如下述的一薄片2以防止水氣滲 透。 ^ 接著，為達成本發明的主要目標，即防止外部水氣滲透 至内部，故使用厚度50 μπι以下的一黏著劑3將厚度等於或 小於100 μηι的一薄片2黏附於IC晶片4的表面上，然後，π 晶片4的安裝面再以一封膠樹脂（由代號丨表示）密封。此薄 片2可為由不銹鋼、42鐵鎳合金、鋁、銅或其他金屬所構成 之薄片，或可為氧化鋁陶瓷材料製成的一水氣滲透阻擋片 ，以防止水氣滲透。此處之薄片2的厚度設定為80 μπι，而 黏著劑3的厚度則設定為30 μηι 〇 接著，下文將參考圖5來說明本發明的第二項具體實施例 -14- 1301588
〇1) 。圖5中，薄片2的樹脂密封表面係以蝕刻、機械加工或其 他程序形成若干凹口及突出物。其餘組態係與上述具體實 施例相同，故在此省略其說明。 依據此項具體實施例，重複出現的凹口與突出物可大幅 提昇其黏著強度。 依據上述組態，因防止水氣滲透的薄片2係與形成有效電 路的1C晶片4之頂部表面緊密接觸，故可有效地阻擋水氣滲 透穿過作為密封樹脂的環氧樹脂〗之主體。換言之，應用不 銹鋼、42鐵鎳合金、鋁、鋼或氧化鋁陶瓷構成且厚度為％ 以下的薄片2，將可完全阻斷穿過具有黏著劑3的lc晶片4 上方的水氣滲透，將1C晶片4與環氧樹脂i隔離，從而使任 何滲透水氣凝結物皆無法穿透環氧樹脂〗到達IC晶片4的介 面。 =將此模組加入IC卡模組16中時，本發明之模組較之僅 以裱氧樹脂1密封1C晶片4的組態擁有較佳結構，能提供改 良的機密性，因即使用具有樹脂溶解能力的化學藥劑（諸如 熱的濃硫酸、發煙硝酸等）解除環氧樹脂丨的密封，其内部 結構或1C晶片4表面上的電路形成面亦無法得見。另外，因 1C晶片4的電路一般皆係形成於一矽基板上，用來防止水氣 自外邠今透的该薄片2亦可提供加強功能以改善其強度，防 止變薄的1C晶片4彎折。
\/ 圖3至5中所示的丨〇卡模組16配置有一調諧電容器6。此調 諧電容器6與透過天線端子7連接的一天線結合，可構成用 於非接觸通訊的一調協電路，在將該模組當作非接觸型工C -15- 1301588
(12) 卡時使用。若該模組係專門用於接觸型1(：卡，則可省略該 元件。 如上所述’即可完成1C卡模組16，但對非接觸型1C卡或 供非接觸與接觸型使用的組合型1(：卡，則必須有一外部通 訊天線與該等連接端子一起形成。 圖6顯示一組合型1(：卡16的結構平面圖，其包含具有外部 端子的一調協晶片電容器6，安裝於共同樹脂密封區域内。 亦即’圖6中所示的結構包含用以連接至一天線及調協電容 器以供非接觸通訊用的端子，並包含四組用於接觸通訊的 電極14形成於如圖7中所示的底部。 詳細而言’薄片2係藉黏著劑3黏附於IC晶片4上，而IC晶 片4的^線^子13與包含絕緣層8的印刷線路板2〇之導線端 子12則係由導線5所焊接。整各結構由環氧樹脂丨所密封， 以覆蓋調協電容器6。另外，印刷線路板2〇上亦配置有傳送 /接收天線連接端子7。 此項具體實施例中之1C卡模組16成品的個別零件厚度如 下。印刷線路板20之絕緣層8的厚度係設定於8〇 μπ^由於 该導體（即銅）係預先加於印刷線路板2〇的絕緣層8之兩側 然後進行貝通孔9的電鍍以電性連接印刷線路板2〇之兩側 一者與後者二導體的厚度各為12(^111與1〇)11111。因此，在 貫通孔電鍍之後，印刷線路板2〇之絕緣層8兩側所形成導體 的厚度總計為：（12+10)χ2=44 μηι。因此，印刷線路板2〇 的厚度總計為124 μηι。1C晶片4為80 μηι厚，IC晶片4的黏 著劑10為30 4瓜厚，而薄片2則為80 μπι厚。因此，個別厚 -16- 1301588 度計算如下： 印刷線路板20包含導體的厚度=124 μηι。 1C晶片4+黏著劑10=110 μηι 薄片2 +黏著劑3 = 110 μηι 總厚度=344 μιη。 在上述結構以下注塑形（transfer molding)用環氧樹脂1密 封的情況中，如圖3至6所不’為讓樹脂獲得較佳的流動性 則另需100 μιη的厚度，因此所得的1C模組16總厚度成為344 μηι +100 μιη =444 μηι 〇 由於配置了薄片2以阻擔水氣渗透，故依據本發明之ι匸卡 模組16即可在處於嚴苛環境時防止因水氣渗透產生的操作 故I5早，此類嚴可％境包括一南溫高濕儲存環境（6〇〇C 9〇%rh 或8 5 C 8 5%RH)、尚溫尚濕並有一偏壓之儲存環境（在6〇 ο。 90%RH或85°C85%RH環境的偏壓測試時，施加有一兩倍 於最大額定之電壓），或加壓蒸汽環境（丨2丨t、2 atm及 100%RH)。因此，即可在1(：卡模組16的環境測試時降低故 障的發生率，從而改善生產量並改善使用環境中的信賴度。 毋庸贅吕，1C卡模組16的成品係就Ic晶片4的電氣特性加 以測試。 如前所述，依據上述具體實施例，能阻絕對lc卡模組16 之1C晶片4表面水氣滲透的薄片2係以甚小厚度之黏著劑3 黏附’然後再以下注塑形程序將環氧樹脂以入該㈣。因 此’即可建立-堅固的模組配置，並產生具有極佳之極端 ¥境耐受能力的IC卡模組16之結構。由於個別元件係依據 -17- 1301588 (14)
上述特疋厚度製造’故包含此種1c卡模組16的該1C卡即可 進一步改善其可攜性，並可容納於一極薄的組態中。 至於對特定環境的耐受性能，依據本發明之IC卡模組可 在相當於環境耐受試驗的嚴苛環境時消除因水氣滲透產生 的操作故障，此類嚴苛環境包括一高溫高濕儲存環境（6〇χ： 9〇%RH或85t：85%RH)、高溫高濕並有一偏壓之儲存環境（ 在6〇C90%RH或85°C85%RH環境的偏壓測試時，施加有一 兩倍於最大額定之電壓），或加壓蒸汽環境（12rc、2 atm. 及l〇〇%RH)。此種對環境的高度耐受性使其可在出貨前的 環境耐受測試時降低故障的發生率，從而改善生產量並改 善實際使用環境中的信賴度。
另外’由於薄片2提供了強化功能以彌補 上的1C晶片4之變薄而降低的抗彎折強度， 在（例如）將該模組製作成甚薄的狀態時， 的方式維持其機械強度。 因安裝於該模組 故此種配置即使 亦能以明顯有效 再者 談及1C卡模組16結構上的一項重要特性 ^ W ，只里晋符性，即使 化學藥劑（諸如熱的濃硫酸、發煙確酸等）解除環氧樹月^ 封劑的密封，薄片2仍然難以溶解，故其能提供耐化學曰 的阻絕層的功能。因此，即無法輕易看見該模組之^晶」 的表面電路結構’故此種配置將能提供非凡的安全； 結果，即使將其應用於特重安全的ic卡中明 模組亦能提供無限的效用。 x月
如前所述，依據本發明，即使在該IC卡模組 試驗中經歷諸如-高溫高濕儲存環境、高溫高濕並有— -18- (15) (15)1301588 = 境、加壓蒸汽環境等，仍能防止伴隨水氣渗透 〜的㈣。另外，達到上述效用使其可在以上述條件進 際％境耐受測試時降低故障的發生率，從而改善生產 量並改善實際使用環境中的信賴度。 ^ 圖式簡單說明 圖1之斷面圖顯示第一項先前技術所揭示的傳統技術之 結構； 圖2之斷面圖顯示第二項先前技術所揭示的另一項傳統 技術之結構； 、、 圖3為本發明一項具體實施例的半導體模組結構的斷面 圖； 圖4為本發明另一項具體實施例的半導體模組結構的斷 面圖； 圖5為本發明另一項具體實施例的半導體模組結構的斷 面圖； 圖6為本發明一項具體實施例的半導體模組之平面圖； 圖7之平面圖顯示本發明之一半導體模組之一項具體實 施例’在其1C晶片安裝表面之背面上的電極部分； 圖8為一結構斷面圖，顯示本發明之一半導體模組嵌入於 一 1C卡基板中；以及 圖9為圖8所示之1C卡的平面圖。 -19- 1301588 (16) 圖式代表符號說明 1 封膠樹脂 2 薄片 3 黏著劑 4 1C晶片 5 導線 6 調諧電容器 7 天線連接端子 8 絕緣層 9 貫通孔 10 薄膜黏著劑 11 端子 12 導線端子 13 導線端子 14 電極 15 1C卡基板 16 1C卡模組 17 凹陷的外殼 18 頂箔 19 液態樹脂 20 印刷線路板 -20-

Claims (1)

13〇1挪&年_ F'-'n 拾、申請專利範圍 1 · 一種半導體模組，其包括： ： 由一絕緣體製成之一印刷線路板，其兩面皆有導體 案形成；以及 ^ 安裝於該印刷線路板上並以一樹脂密封的一半導體 晶片， 其特徵為在該半導體晶片背對該印刷線路板的一側表 面上黏附有一金屬片。 、 2. 3. 5. 6. 7. 8. 如申請專利範圍第丨項之半導體模組，進一步包括天線 連接端子，其係配置於該印刷線路板配置有該半導體晶 片之表面，及/或包括配置於安裝有該半導體晶片之表面 的背面底下之電性連接電極。 如申請專利範圍第1項之半導體模組，其中該金屬片係 由不銹鋼、42鐵鎳合金、鋁或銅所形成。 如申請專利範圍第1項之半導體模組，其中非透明水氣 滲透阻擋片係由氧化鋁陶瓷所形成。 如申請專利範圍第1項之半導體模組，其中該金屬片或 非透明水氣滲透阻擋片之厚度為1〇〇 μιη或更薄。 如申請專利範圍第丨項之半導體模組，其中配置一黏著 劑層用以黏接該半導體晶片與該金屬片或非透明水氣 參透阻擋片，且該黏著劑層之厚度為3〇 或更薄。 如申請專利範圍第1項之半導體模組，其中該金屬片之 未黏接表面係形成若干凹口及突出物。 一種半導體模組生產方法’其中有一半導體晶片安裝於 81498-951215.doc
1301588 n緣體製成且兩面皆有導體圖案形成的—印刷線 路板上’然後將其上錢有該半導體晶片之印刷線路板 以一樹脂密封，該方法包括以下步驟： 將違半導體晶片安裝於該印刷線路板上； 以導線執行此二者間之電性連接；以及 黏接一金屬片於該半導體晶片表面，其間以_點著劑 層黏附，然後在該印刷線路板安裝有該半導體晶 側以一封膠樹脂覆蓋密封。 Βθ 、 9. -種半導體模組生產方法，其中有—半導體晶片安裝於 由-緣體製成且兩面皆有導體圖案形成的 路板上’然後將其上安裝㈣半導體晶片之印刷線路ί 以-樹脂密封’該方法包括以下步驟： %路板 在黏附於該半導體晶片表面的-金屬片之-側形成 凹口與突出物，然後在該印刷線路板安裝㈣半導艘^ 片的一側以一封膠樹脂覆蓋密封。 a:申j專利範圍第8項之半導體模組生產方法 導線在該印刷線路板與該半導體晶片間表 由正常導線焊接所執行’或首先以球形焊接將導 11 導線焊接於該印刷線路板預設之端子上。 妾將各 範圍第9項之半導體模組生產方法，其中以 導線在该印刷線路板與 ? ^ 由正常導線焊接所執行、 _、曰曰Β、電性連接係 於該半導體晶片之各電2 ^球形焊接將導線Μ 各電極上，然後再以訂合式焊接將 81498-95I215.doc 1301588 12. 13. 14.
^線烊接於該印刷線路板預設之各端子上。 如申請專利範圍第8項之半導體模組生產方法，I中以 導線在該印刷線路板與該半導體晶片間的電性連接係 由f向導線焊接所執行，或首先以球形焊接將導線焊接 於口亥印刷線路板預設之各端子上，然後再以訂合式焊接 將各導線焊接於該半導體晶片之各電極上。 :申請專利範圍第9項之半導體模組生產方法，其中以 導線在該印刷線路板與該半導體晶片間的電性連接係 由反向導線4接所執行，或首先以球形焊接將導線焊接 於該印刷線路板預設之久山工 攸頂叹之各ί而子上，然後再以訂合式焊接 將各導線焊接於料導體晶片之各電極±。 -種包含-半導體模組的IC卡之類模組，其包括:由— 、巴.，彖體製成之-印刷線路板，其兩面皆有導體圖案形成 :以及安裝於該印刷線路板上並以—樹脂密封的一半導 體晶片’其中在該半導轉日i 曰日片者對§亥印刷線路板的一側 表面上黏附有一金屬片。 81498-951215.doc
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