TWI293480B - - Google Patents

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Info

Publication number: TWI293480B
Authority: TW; Taiwan
Prior art keywords: film; plasma; etching method; plasma etching; gas
Prior art date: 2002-03-25

Application number

TW092105357A

Other languages

English (en)

Chinese (zh)

Other versions

TW200305944A (en

Inventor

Noriyuki Kobayashi

Original Assignee

Tokyo Electron Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-03-25

Filing date

2003-03-12

Publication date

2008-02-11

2003-03-12 Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd

2003-11-01 Publication of TW200305944A publication Critical patent/TW200305944A/zh

2008-02-11 Application granted granted Critical

2008-02-11 Publication of TWI293480B publication Critical patent/TWI293480B/zh

Links

238000001020 plasma etching Methods 0.000 claims description 28
238000000034 method Methods 0.000 claims description 26
229910052751 metal Inorganic materials 0.000 claims description 19
239000002184 metal Substances 0.000 claims description 19
229910052770 Uranium Inorganic materials 0.000 claims description 16
150000004767 nitrides Chemical class 0.000 claims description 16
JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 16
150000002736 metal compounds Chemical class 0.000 claims description 12
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
239000000126 substance Substances 0.000 claims 2
229910052684 Cerium Inorganic materials 0.000 claims 1
GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
150000001875 compounds Chemical class 0.000 claims 1
238000005530 etching Methods 0.000 description 37
239000007789 gas Substances 0.000 description 36
229910004298 SiO 2 Inorganic materials 0.000 description 14
239000012212 insulator Substances 0.000 description 5
239000011148 porous material Substances 0.000 description 5
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
239000006227 byproduct Substances 0.000 description 2
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
229920002120 photoresistant polymer Polymers 0.000 description 2
239000004065 semiconductor Substances 0.000 description 2
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910000420 cerium oxide Inorganic materials 0.000 description 1
238000010586 diagram Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
229910052731 fluorine Inorganic materials 0.000 description 1
239000011737 fluorine Substances 0.000 description 1
125000000524 functional group Chemical group 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
238000009832 plasma treatment Methods 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
239000002002 slurry Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
238000010301 surface-oxidation reaction Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Inorganic Chemistry (AREA)
Drying Of Semiconductors (AREA)

TW092105357A 2002-03-25 2003-03-12 Plasma etching method TW200305944A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2002082716A JP4176365B2 (ja)	2002-03-25	2002-03-25	プラズマエッチング方法

Publications (2)

Publication Number	Publication Date
TW200305944A TW200305944A (en)	2003-11-01
TWI293480B true TWI293480B (ja)	2008-02-11

Family

ID=28449155

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092105357A TW200305944A (en)	2002-03-25	2003-03-12	Plasma etching method

Country Status (5)

Country	Link
US (1)	US20050161435A1 (ja)
JP (1)	JP4176365B2 (ja)
CN (1)	CN100367469C (ja)
TW (1)	TW200305944A (ja)
WO (1)	WO2003081655A1 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8129282B2 (en) *	2006-07-19	2012-03-06	Tokyo Electron Limited	Plasma etching method and computer-readable storage medium
JP4948278B2 (ja) *	2006-08-30	2012-06-06	ルネサスエレクトロニクス株式会社	半導体装置の製造方法
JP5982223B2 (ja) *	2012-08-27	2016-08-31	東京エレクトロン株式会社	プラズマ処理方法、及びプラズマ処理装置
JP2014220387A (ja) *	2013-05-08	2014-11-20	東京エレクトロン株式会社	プラズマエッチング方法
JP6284786B2 (ja)	2014-02-27	2018-02-28	東京エレクトロン株式会社	プラズマ処理装置のクリーニング方法
KR102224847B1 (ko)	2014-10-10	2021-03-08	삼성전자주식회사	반도체 소자의 제조방법
JP6529357B2 (ja) *	2015-06-23	2019-06-12	東京エレクトロン株式会社	エッチング方法
CN106356297B (zh) *	2015-07-16	2019-02-22	中微半导体设备(上海)有限公司	一种氮化钽TaN薄膜的刻蚀方法
JP7008474B2 (ja) *	2016-11-30	2022-01-25	東京エレクトロン株式会社	プラズマエッチング方法
US10854430B2 (en)	2016-11-30	2020-12-01	Tokyo Electron Limited	Plasma etching method
JP6833657B2 (ja)	2017-11-07	2021-02-24	東京エレクトロン株式会社	基板をプラズマエッチングする方法
JP7195113B2 (ja) *	2018-11-07	2022-12-23	東京エレクトロン株式会社	処理方法及び基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5300460A (en) *	1989-10-03	1994-04-05	Applied Materials, Inc.	UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5468339A (en) *	1992-10-09	1995-11-21	Advanced Micro Devices, Inc.	Plasma etch process
US5700740A (en) *	1996-03-25	1997-12-23	Taiwan Semiconductor Manufacturing Company Ltd	Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species
US5942446A (en) *	1997-09-12	1999-08-24	Taiwan Semiconductor Manufacturing Company, Ltd.	Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer
JPH11340321A (ja) *	1998-05-27	1999-12-10	Sony Corp	半導体装置およびその製造方法
US6007733A (en) *	1998-05-29	1999-12-28	Taiwan Semiconductor Manufacturing Company	Hard masking method for forming oxygen containing plasma etchable layer
US6319822B1 (en) *	1998-10-01	2001-11-20	Taiwan Semiconductor Manufacturing Company	Process for forming an integrated contact or via
JP2000150463A (ja) *	1998-11-16	2000-05-30	Canon Inc	有機層間絶縁膜のエッチング処理方法
JP2001007202A (ja) *	1999-06-22	2001-01-12	Sony Corp	半導体装置の製造方法
JP4173307B2 (ja) *	1999-06-24	2008-10-29	株式会社ルネサステクノロジ	半導体集積回路の製造方法
WO2001037314A1 (en) *	1999-11-15	2001-05-25	Lam Research Corporation	Materials and gas chemistries for processing systems
JP3400770B2 (ja) *	1999-11-16	2003-04-28	松下電器産業株式会社	エッチング方法、半導体装置及びその製造方法
JP2001274264A (ja) *	2000-03-24	2001-10-05	Mitsubishi Electric Corp	半導体装置及びその製造方法
US6410424B1 (en) *	2001-04-19	2002-06-25	Taiwan Semiconductor Manufacturing Company	Process flow to optimize profile of ultra small size photo resist free contact

2002
- 2002-03-25 JP JP2002082716A patent/JP4176365B2/ja not_active Expired - Lifetime
2003
- 2003-03-07 US US10/508,006 patent/US20050161435A1/en not_active Abandoned
- 2003-03-07 CN CNB038068966A patent/CN100367469C/zh not_active Expired - Lifetime
- 2003-03-07 WO PCT/JP2003/002749 patent/WO2003081655A1/ja active Application Filing
- 2003-03-12 TW TW092105357A patent/TW200305944A/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
TW200305944A (en)	2003-11-01
CN1643665A (zh)	2005-07-20
US20050161435A1 (en)	2005-07-28
JP2003282539A (ja)	2003-10-03
JP4176365B2 (ja)	2008-11-05
CN100367469C (zh)	2008-02-06
WO2003081655A1 (fr)	2003-10-02

Legal Events

Date	Code	Title	Description
2023-11-11	MM4A	Annulment or lapse of patent due to non-payment of fees

Publication	Publication Date	Title
TW200401365A (en)	2004-01-16	Plasma processing method
TWI293480B (ja)	2008-02-11
US20070298617A1 (en)	2007-12-27	Processing method
TW201137970A (en)	2011-11-01	Low damage photoresist strip method for low-k dielectrics
JP4326746B2 (ja)	2009-09-09	プラズマ処理方法
TW201201276A (en)	2012-01-01	Plasma etching method, plasma etching apparatus and computer-readable storage medium
JP2008098418A (ja)	2008-04-24	基板処理方法および基板処理システム、ならびにコンピュータ読取可能な記憶媒体
TWI527113B (zh)	2016-03-21	A plasma etch method, a plasma etch apparatus, and a memory medium
KR101540816B1 (ko)	2015-07-30	플라즈마 에칭 방법, 컴퓨터 기억 매체 및 플라즈마 에칭 장치
JP2005251837A (ja)	2005-09-15	プラズマ処理方法及びプラズマ処理装置
JP2007234770A (ja)	2007-09-13	プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP2007273866A (ja)	2007-10-18	エッチング方法、プラズマ処理装置、記憶媒体
JP4656364B2 (ja)	2011-03-23	プラズマ処理方法
JP4668522B2 (ja)	2011-04-13	プラズマ処理方法
JP4827567B2 (ja)	2011-11-30	プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP2011151141A (ja)	2011-08-04	基板処理方法及び記憶媒体
JP4775834B2 (ja)	2011-09-21	エッチング方法
JP2010263244A (ja)	2010-11-18	プラズマ処理方法
WO2006121117A1 (ja)	2006-11-16	プラズマクリーニング方法および成膜方法
JP2004319972A (ja)	2004-11-11	エッチング方法及びエッチング装置
JP4684924B2 (ja)	2011-05-18	プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
TWI689007B (zh)	2020-03-21	蝕刻方法
JP4749683B2 (ja)	2011-08-17	エッチング方法
JP2004006575A (ja)	2004-01-08	エッチング方法
JP4361835B2 (ja)	2009-11-11	プラズマ処理装置、プラズマ制御部材及びプラズマ処理方法