JP2005251837A - プラズマ処理方法及びプラズマ処理装置 - Google Patents
プラズマ処理方法及びプラズマ処理装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000009832 plasma treatment Methods 0.000 title claims abstract 4
- 238000004380 ashing Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims description 120
- 239000007789 gas Substances 0.000 claims description 87
- 238000003672 processing method Methods 0.000 claims description 27
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 230000007423 decrease Effects 0.000 description 31
- 239000004065 semiconductor Substances 0.000 description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
- 238000005259 measurement Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000000611 regression analysis Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
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- Condensed Matter Physics & Semiconductors (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Photosensitive Polymer And Photoresist Processing (AREA)
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Abstract
【選択図】図1
Description
請求項15のプラズマ処理装置は、請求項9〜12いずれか1項記載のプラズマ処理装置において、前記処理ガス供給機構が、O2 /He混合ガスでありO2 /He流量に対するO2 流量の比率が25%以上であるガスを供給するよう構成されたことを特徴とする。
Claims (15)
- プラズマ処理室の内部の圧力が4Pa以下の範囲において、少なくとも酸素を含む処理ガスを使用し、有機系低誘電率膜及びレジスト膜が形成された被アッシング基板の前記レジスト膜をアッシング除去する方法であって、
第1の周波数を有する第1の高周波電力を印加して、前記処理ガスのプラズマを生成する工程と、
前記被アッシング基板が載置された電極に、前記第1の周波数より低い第2の周波数を有する第2の高周波電力を印加して、自己バイアス電圧を生成する工程とを有し、
前記第1の高周波電力の印加電力が0.81W/cm2 以下であることを特徴とするプラズマ処理方法。 - 前記有機系低誘電率膜が、Si,O,C,Hを有することを特徴とする請求項1記載のプラズマ処理方法。
- 前記プラズマ処理室の内部に、前記被アッシング基板が載置された電極に対向して上部に上部電極が配置され、当該上部電極に前記第1の高周波電力を印加することを特徴とする請求項1又は2記載のプラズマ処理方法。
- 前記プラズマ処理室の内部の圧力が1.3Pa以上であることを特徴とする請求項1〜3いずれか1項記載のプラズマ処理方法。
- 前記第2の高周波電力の印加電力が0.28W/cm2 〜0.66W/cm2 であることを特徴とする請求項1〜4いずれか1項記載のプラズマ処理方法。
- 前記処理ガスがO2 ガスであることを特徴とする請求項1〜5いずれか1項記載のプラズマ処理方法。
- 前記処理ガスがO2 /Ar混合ガスであり、O2 /Ar流量に対するO2 流量の比率が40%以上であることを特徴とする請求項1〜5いずれか1項記載のプラズマ処理方法。
- 前記処理ガスがO2 /He混合ガスであり、O2 /He流量に対するO2 流量の比率が25%以上であることを特徴とする請求項1〜5いずれか1項記載のプラズマ処理方法。
- 有機系低誘電率膜及びレジスト膜が形成された被アッシング基板の前記レジスト膜をアッシング除去するプラズマ処理装置であって、
内部の圧力が4Pa以下とされるプラズマ処理室と、
前記プラズマ処理室内に、少なくとも酸素を含む処理ガスを供給する処理ガス供給機構と、
前記プラズマ処理室内に設けられ、前記被アッシング基板が載置される電極と、
第1の周波数を有し、電力が0.81W/cm2 以下の高周波電力を印加して前記処理ガスのプラズマを生成する第1の高周波電力印加手段と、
前記電極に第2の周波数を有する高周波電力を印加して自己バイアス電圧を生成する第2の高周波電力印加手段と
を具備したことを特徴とするプラズマ処理装置。 - 前記プラズマ処理室の内部に、前記被アッシング基板が載置された電極に対向して上部に上部電極が配置され、当該上部電極に前記第1の高周波電力印加手段が高周波電力を印加することを特徴とする請求項9記載のプラズマ処理装置。
- 前記プラズマ処理室の内部の圧力が1.3Pa以上であることを特徴とする請求項9又は10記載のプラズマ処理装置。
- 前記第2の高周波電力印加手段が、0.28W/cm2 〜0.66W/cm2 の電力を印加するよう構成されたことを特徴とする請求項9〜11いずれか1項記載のプラズマ処理装置。
- 前記処理ガス供給機構がO2 ガスを供給するよう構成されたことを特徴とする請求項9〜12いずれか1項記載のプラズマ処理装置。
- 前記処理ガス供給機構が、O2 /Ar混合ガスでありO2 /Ar流量に対するO2 流量の比率が40%以上であるガスを供給するよう構成されたことを特徴とする請求項9〜12いずれか1項記載のプラズマ処理装置。
- 前記処理ガス供給機構が、O2 /He混合ガスでありO2 /He流量に対するO2 流量の比率が25%以上であるガスを供給するよう構成されたことを特徴とする請求項9〜12いずれか1項記載のプラズマ処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004057290A JP4312630B2 (ja) | 2004-03-02 | 2004-03-02 | プラズマ処理方法及びプラズマ処理装置 |
US11/067,706 US20050230351A1 (en) | 2004-03-02 | 2005-03-01 | Plasma processing method and apparatus |
CNB200510051178XA CN100375247C (zh) | 2004-03-02 | 2005-03-02 | 等离子体处理方法和等离子体处理装置 |
Applications Claiming Priority (1)
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JP2004057290A JP4312630B2 (ja) | 2004-03-02 | 2004-03-02 | プラズマ処理方法及びプラズマ処理装置 |
Publications (2)
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JP2005251837A true JP2005251837A (ja) | 2005-09-15 |
JP4312630B2 JP4312630B2 (ja) | 2009-08-12 |
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JP2004057290A Expired - Fee Related JP4312630B2 (ja) | 2004-03-02 | 2004-03-02 | プラズマ処理方法及びプラズマ処理装置 |
Country Status (3)
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US (1) | US20050230351A1 (ja) |
JP (1) | JP4312630B2 (ja) |
CN (1) | CN100375247C (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7914692B2 (en) | 2006-08-29 | 2011-03-29 | Ngk Insulators, Ltd. | Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding |
JP2011108884A (ja) * | 2009-11-18 | 2011-06-02 | Tokyo Electron Ltd | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 |
US8012880B2 (en) | 2007-07-02 | 2011-09-06 | Tokyo Electron Limited | Method of manufacturing semiconductor device |
CN103887146A (zh) * | 2012-12-19 | 2014-06-25 | 中微半导体设备(上海)有限公司 | 利用可切换功率发生器的高深宽比微结构刻蚀方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4416569B2 (ja) * | 2004-05-24 | 2010-02-17 | キヤノン株式会社 | 堆積膜形成方法および堆積膜形成装置 |
JP5057647B2 (ja) * | 2004-07-02 | 2012-10-24 | 東京エレクトロン株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
KR100706822B1 (ko) * | 2005-10-17 | 2007-04-12 | 삼성전자주식회사 | 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 |
US20070218698A1 (en) * | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus, and computer-readable storage medium |
US7368393B2 (en) * | 2006-04-20 | 2008-05-06 | International Business Machines Corporation | Chemical oxide removal of plasma damaged SiCOH low k dielectrics |
KR101240654B1 (ko) * | 2006-05-09 | 2013-03-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
KR100849366B1 (ko) * | 2006-08-24 | 2008-07-31 | 세메스 주식회사 | 기판을 처리하는 장치 및 방법 |
JP4948278B2 (ja) * | 2006-08-30 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8617301B2 (en) * | 2007-01-30 | 2013-12-31 | Lam Research Corporation | Compositions and methods for forming and depositing metal films on semiconductor substrates using supercritical solvents |
US7786011B2 (en) * | 2007-01-30 | 2010-08-31 | Lam Research Corporation | Composition and methods for forming metal films on semiconductor substrates using supercritical solvents |
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KR20190061872A (ko) * | 2017-11-28 | 2019-06-05 | 주식회사 원익아이피에스 | 비정질 실리콘막의 형성 방법 |
KR102217171B1 (ko) * | 2018-07-30 | 2021-02-17 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
CN113311247B (zh) * | 2021-05-28 | 2022-02-11 | 电子科技大学 | 一种测量离子密度对相对介电常数影响的装置及测量方法 |
Family Cites Families (7)
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US6720249B1 (en) * | 2000-04-17 | 2004-04-13 | International Business Machines Corporation | Protective hardmask for producing interconnect structures |
US6457477B1 (en) * | 2000-07-24 | 2002-10-01 | Taiwan Semiconductor Manufacturing Company | Method of cleaning a copper/porous low-k dual damascene etch |
US6777344B2 (en) * | 2001-02-12 | 2004-08-17 | Lam Research Corporation | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
US7067235B2 (en) * | 2002-01-15 | 2006-06-27 | Ming Huan Tsai | Bi-layer photoresist dry development and reactive ion etch method |
US7169440B2 (en) * | 2002-04-16 | 2007-01-30 | Tokyo Electron Limited | Method for removing photoresist and etch residues |
US20030228768A1 (en) * | 2002-06-05 | 2003-12-11 | Applied Materials, Inc. | Dielectric etching with reduced striation |
DE10243406A1 (de) * | 2002-09-18 | 2004-04-01 | Leybold Optics Gmbh | Plasmaquelle |
-
2004
- 2004-03-02 JP JP2004057290A patent/JP4312630B2/ja not_active Expired - Fee Related
-
2005
- 2005-03-01 US US11/067,706 patent/US20050230351A1/en not_active Abandoned
- 2005-03-02 CN CNB200510051178XA patent/CN100375247C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7914692B2 (en) | 2006-08-29 | 2011-03-29 | Ngk Insulators, Ltd. | Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding |
US8012880B2 (en) | 2007-07-02 | 2011-09-06 | Tokyo Electron Limited | Method of manufacturing semiconductor device |
JP2011108884A (ja) * | 2009-11-18 | 2011-06-02 | Tokyo Electron Ltd | 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体 |
CN103887146A (zh) * | 2012-12-19 | 2014-06-25 | 中微半导体设备(上海)有限公司 | 利用可切换功率发生器的高深宽比微结构刻蚀方法 |
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CN1664995A (zh) | 2005-09-07 |
JP4312630B2 (ja) | 2009-08-12 |
CN100375247C (zh) | 2008-03-12 |
US20050230351A1 (en) | 2005-10-20 |
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