TWI266770B - Polymer compound, positive resist composition and method for forming resist pattern - Google Patents

Polymer compound, positive resist composition and method for forming resist pattern

Info

Publication number
TWI266770B
TWI266770B TW094134017A TW94134017A TWI266770B TW I266770 B TWI266770 B TW I266770B TW 094134017 A TW094134017 A TW 094134017A TW 94134017 A TW94134017 A TW 94134017A TW I266770 B TWI266770 B TW I266770B
Authority
TW
Taiwan
Prior art keywords
group
lower alkyl
polymer compound
hydrogen atom
structural unit
Prior art date
Application number
TW094134017A
Other languages
English (en)
Chinese (zh)
Other versions
TW200619238A (en
Inventor
Hideo Hada
Syogo Matsumaru
Masaru Takeshita
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200619238A publication Critical patent/TW200619238A/zh
Application granted granted Critical
Publication of TWI266770B publication Critical patent/TWI266770B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094134017A 2004-10-06 2005-09-29 Polymer compound, positive resist composition and method for forming resist pattern TWI266770B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004293959A JP2006104353A (ja) 2004-10-06 2004-10-06 高分子化合物、ポジ型レジスト組成物、およびレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW200619238A TW200619238A (en) 2006-06-16
TWI266770B true TWI266770B (en) 2006-11-21

Family

ID=36142472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134017A TWI266770B (en) 2004-10-06 2005-09-29 Polymer compound, positive resist composition and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2006104353A (ja)
TW (1) TWI266770B (ja)
WO (1) WO2006038387A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5548416B2 (ja) 2008-09-29 2014-07-16 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP6613615B2 (ja) * 2015-05-19 2019-12-04 信越化学工業株式会社 高分子化合物及び単量体並びにレジスト材料及びパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
JP2004085900A (ja) * 2002-08-27 2004-03-18 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2004138790A (ja) * 2002-10-17 2004-05-13 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP3900135B2 (ja) * 2002-10-29 2007-04-04 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2004220009A (ja) * 2002-12-28 2004-08-05 Jsr Corp 感放射線性樹脂組成物
JP2004317575A (ja) * 2003-04-11 2004-11-11 Tokyo Ohka Kogyo Co Ltd ヒドロキシ酸化合物製造法、ネガ型レジスト材料、および、配線形成方法

Also Published As

Publication number Publication date
TW200619238A (en) 2006-06-16
WO2006038387A1 (ja) 2006-04-13
JP2006104353A (ja) 2006-04-20

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