TWI266770B - Polymer compound, positive resist composition and method for forming resist pattern - Google Patents
Polymer compound, positive resist composition and method for forming resist patternInfo
- Publication number
- TWI266770B TWI266770B TW094134017A TW94134017A TWI266770B TW I266770 B TWI266770 B TW I266770B TW 094134017 A TW094134017 A TW 094134017A TW 94134017 A TW94134017 A TW 94134017A TW I266770 B TWI266770 B TW I266770B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- lower alkyl
- polymer compound
- hydrogen atom
- structural unit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004293959A JP2006104353A (ja) | 2004-10-06 | 2004-10-06 | 高分子化合物、ポジ型レジスト組成物、およびレジストパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200619238A TW200619238A (en) | 2006-06-16 |
TWI266770B true TWI266770B (en) | 2006-11-21 |
Family
ID=36142472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094134017A TWI266770B (en) | 2004-10-06 | 2005-09-29 | Polymer compound, positive resist composition and method for forming resist pattern |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2006104353A (zh) |
TW (1) | TWI266770B (zh) |
WO (1) | WO2006038387A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5548416B2 (ja) | 2008-09-29 | 2014-07-16 | 富士フイルム株式会社 | ポジ型感光性組成物及びそれを用いたパターン形成方法 |
JP6613615B2 (ja) * | 2015-05-19 | 2019-12-04 | 信越化学工業株式会社 | 高分子化合物及び単量体並びにレジスト材料及びパターン形成方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6806026B2 (en) * | 2002-05-31 | 2004-10-19 | International Business Machines Corporation | Photoresist composition |
JP2004085900A (ja) * | 2002-08-27 | 2004-03-18 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2004138790A (ja) * | 2002-10-17 | 2004-05-13 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP3900135B2 (ja) * | 2002-10-29 | 2007-04-04 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP2004220009A (ja) * | 2002-12-28 | 2004-08-05 | Jsr Corp | 感放射線性樹脂組成物 |
JP2004317575A (ja) * | 2003-04-11 | 2004-11-11 | Tokyo Ohka Kogyo Co Ltd | ヒドロキシ酸化合物製造法、ネガ型レジスト材料、および、配線形成方法 |
-
2004
- 2004-10-06 JP JP2004293959A patent/JP2006104353A/ja not_active Withdrawn
-
2005
- 2005-08-19 WO PCT/JP2005/015168 patent/WO2006038387A1/ja active Application Filing
- 2005-09-29 TW TW094134017A patent/TWI266770B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2006104353A (ja) | 2006-04-20 |
TW200619238A (en) | 2006-06-16 |
WO2006038387A1 (ja) | 2006-04-13 |
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