TWI255872B - Electroplating bath - Google Patents

Electroplating bath

Info

Publication number
TWI255872B
TWI255872B TW092132523A TW92132523A TWI255872B TW I255872 B TWI255872 B TW I255872B TW 092132523 A TW092132523 A TW 092132523A TW 92132523 A TW92132523 A TW 92132523A TW I255872 B TWI255872 B TW I255872B
Authority
TW
Taiwan
Prior art keywords
electroplating bath
electroplating baths
copper electroplating
copper
pits
Prior art date
Application number
TW092132523A
Other languages
English (en)
Other versions
TW200424362A (en
Inventor
Robert D Mikkola
Deyan Wang
Chunyi Wu
Original Assignee
Shipley Co Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Llc filed Critical Shipley Co Llc
Publication of TW200424362A publication Critical patent/TW200424362A/zh
Application granted granted Critical
Publication of TWI255872B publication Critical patent/TWI255872B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
TW092132523A 2002-11-21 2003-11-20 Electroplating bath TWI255872B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42816102P 2002-11-21 2002-11-21
US43592002P 2002-12-20 2002-12-20

Publications (2)

Publication Number Publication Date
TW200424362A TW200424362A (en) 2004-11-16
TWI255872B true TWI255872B (en) 2006-06-01

Family

ID=32233682

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092132523A TWI255872B (en) 2002-11-21 2003-11-20 Electroplating bath

Country Status (6)

Country Link
US (1) US20040217009A1 (zh)
EP (1) EP1422320A1 (zh)
JP (1) JP2004169188A (zh)
KR (1) KR101089618B1 (zh)
CN (1) CN100526517C (zh)
TW (1) TWI255872B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391536B (zh) * 2007-08-10 2013-04-01 羅門哈斯電子材料有限公司 銅電鍍製程
TWI398555B (zh) * 2007-08-10 2013-06-11 羅門哈斯電子材料有限公司 銅電鍍浴配方

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US8349393B2 (en) * 2004-07-29 2013-01-08 Enthone Inc. Silver plating in electronics manufacture
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US7704368B2 (en) 2005-01-25 2010-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Method and apparatus for electrochemical plating semiconductor wafers
US20060243599A1 (en) * 2005-04-28 2006-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Electroplating additive for improved reliability
JP2006336031A (ja) * 2005-05-31 2006-12-14 Toray Eng Co Ltd 硫酸銅メッキ浴及びそのメッキ浴を使用したメッキ方法
EP1741804B1 (en) * 2005-07-08 2016-04-27 Rohm and Haas Electronic Materials, L.L.C. Electrolytic copper plating method
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
US7153408B1 (en) * 2006-04-13 2006-12-26 Herdman Roderick D Copper electroplating of printing cylinders
JP5497261B2 (ja) * 2006-12-15 2014-05-21 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． インジウム組成物
CN101796221B (zh) * 2007-05-21 2012-07-04 上村工业株式会社 铜电镀浴
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US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
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US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US10221496B2 (en) 2008-11-26 2019-03-05 Macdermid Enthone Inc. Copper filling of through silicon vias
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EP2459778B1 (en) 2009-07-30 2015-01-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
MY160150A (en) * 2009-07-30 2017-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US8268155B1 (en) * 2009-10-05 2012-09-18 Novellus Systems, Inc. Copper electroplating solutions with halides
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US10392531B2 (en) 2009-11-30 2019-08-27 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
EP2507332A4 (en) 2009-11-30 2017-08-02 Basf Se Process for removing bulk material layer from substrate and chemical mechanical polishing agent suitable for this process
EP2392694A1 (en) * 2010-06-02 2011-12-07 ATOTECH Deutschland GmbH Method for etching of copper and copper alloys
TWI414643B (zh) * 2010-09-01 2013-11-11 Univ Nat Chunghsing 銅電鍍液組成物
RU2577281C2 (ru) 2010-09-08 2016-03-10 Басф Се Водная полирующая композиция и способ химико-механического полирования материалов подложек для электрических, механических и оптических устройств
RU2608890C2 (ru) 2010-09-08 2017-01-26 Басф Се Водные полирующие композиции, содержащие n-замещенные диазений диоксиды и/или соли n -замещенных n'-гидрокси-диазений оксидов
RU2573672C2 (ru) 2010-09-08 2016-01-27 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния
EP2625236B1 (en) 2010-10-07 2017-12-13 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
WO2012077063A1 (en) 2010-12-10 2012-06-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
EP2465976B1 (en) * 2010-12-15 2013-04-03 Rohm and Haas Electronic Materials LLC Method of electroplating uniform copper layer on the edge and walls of though holes of a substrate.
WO2012085811A1 (en) * 2010-12-21 2012-06-28 Basf Se Composition for metal electroplating comprising leveling agent
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
JP5363523B2 (ja) * 2011-03-28 2013-12-11 上村工業株式会社 電気銅めっき用添加剤及び電気銅めっき浴
KR20140092626A (ko) 2013-01-16 2014-07-24 삼성전자주식회사 구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법
US9865501B2 (en) 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
CN103290438B (zh) * 2013-06-25 2015-12-02 深圳市创智成功科技有限公司 用于晶圆级封装的电镀铜溶液及电镀方法
US9783903B2 (en) 2013-12-06 2017-10-10 Rohm And Haas Electronic Materials Llc Additives for electroplating baths
DE102013226297B3 (de) * 2013-12-17 2015-03-26 Umicore Galvanotechnik Gmbh Wässriger, cyanidfreier Elektrolyt für die Abscheidung von Kupfer-Zinn- und Kupfer-Zinn-Zink-Legierungen aus einem Elektrolyten und Verfahren zur elektrolytischen Abscheidung dieser Legierungen
US9783901B2 (en) 2014-03-11 2017-10-10 Macdermid Acumen, Inc. Electroplating of metals on conductive oxide substrates
US9469912B2 (en) 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
US9809891B2 (en) 2014-06-30 2017-11-07 Rohm And Haas Electronic Materials Llc Plating method
US9472377B2 (en) 2014-10-17 2016-10-18 Lam Research Corporation Method and apparatus for characterizing metal oxide reduction
CN105018977B (zh) * 2015-07-17 2017-09-12 深圳市板明科技有限公司 一种填孔电镀整平剂、制备方法及应用该整平剂的电镀液
US10988852B2 (en) * 2015-10-27 2021-04-27 Rohm And Haas Electronic Materials Llc Method of electroplating copper into a via on a substrate from an acid copper electroplating bath
KR101703143B1 (ko) 2015-11-25 2017-02-07 주식회사 서연이화 소음 방지용 가이드유닛이 장착된 콘솔 암레스트 장치
CN107278058A (zh) * 2016-04-08 2017-10-20 东莞市斯坦得电子材料有限公司 一种用于印制线路板埋孔、盲孔填孔镀铜的工艺
KR102505102B1 (ko) 2016-06-30 2023-03-03 솔브레인 주식회사 금속 도금 조성물 및 이를 이용한 금속 도금 방법
KR20180086073A (ko) * 2017-01-20 2018-07-30 삼성전기주식회사 기판 도금용 조성물 및 이를 이용한 도금 방법
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
KR102445637B1 (ko) 2017-11-28 2022-09-22 솔브레인 주식회사 레벨링제 및 이를 포함하는 전기도금 조성물
CN108441898B (zh) * 2018-04-18 2021-02-09 深圳海恩特科技有限公司 一种电镀溶液及方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391536B (zh) * 2007-08-10 2013-04-01 羅門哈斯電子材料有限公司 銅電鍍製程
TWI398555B (zh) * 2007-08-10 2013-06-11 羅門哈斯電子材料有限公司 銅電鍍浴配方

Also Published As

Publication number Publication date
JP2004169188A (ja) 2004-06-17
CN100526517C (zh) 2009-08-12
KR20040045328A (ko) 2004-06-01
EP1422320A1 (en) 2004-05-26
KR101089618B1 (ko) 2011-12-05
CN1506501A (zh) 2004-06-23
US20040217009A1 (en) 2004-11-04
TW200424362A (en) 2004-11-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees