TWI255872B - Electroplating bath - Google Patents
Electroplating bathInfo
- Publication number
- TWI255872B TWI255872B TW092132523A TW92132523A TWI255872B TW I255872 B TWI255872 B TW I255872B TW 092132523 A TW092132523 A TW 092132523A TW 92132523 A TW92132523 A TW 92132523A TW I255872 B TWI255872 B TW I255872B
- Authority
- TW
- Taiwan
- Prior art keywords
- electroplating bath
- electroplating baths
- copper electroplating
- copper
- pits
- Prior art date
Links
- 238000009713 electroplating Methods 0.000 title abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US42816102P | 2002-11-21 | 2002-11-21 | |
US43592002P | 2002-12-20 | 2002-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200424362A TW200424362A (en) | 2004-11-16 |
TWI255872B true TWI255872B (en) | 2006-06-01 |
Family
ID=32233682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092132523A TWI255872B (en) | 2002-11-21 | 2003-11-20 | Electroplating bath |
Country Status (6)
Country | Link |
---|---|
US (1) | US20040217009A1 (zh) |
EP (1) | EP1422320A1 (zh) |
JP (1) | JP2004169188A (zh) |
KR (1) | KR101089618B1 (zh) |
CN (1) | CN100526517C (zh) |
TW (1) | TWI255872B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI391536B (zh) * | 2007-08-10 | 2013-04-01 | 羅門哈斯電子材料有限公司 | 銅電鍍製程 |
TWI398555B (zh) * | 2007-08-10 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 銅電鍍浴配方 |
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US20050072683A1 (en) * | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
TW200613586A (en) * | 2004-07-22 | 2006-05-01 | Rohm & Haas Elect Mat | Leveler compounds |
JP4973829B2 (ja) * | 2004-07-23 | 2012-07-11 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
US8349393B2 (en) * | 2004-07-29 | 2013-01-08 | Enthone Inc. | Silver plating in electronics manufacture |
TWI400365B (zh) * | 2004-11-12 | 2013-07-01 | Enthone | 微電子裝置上的銅電沈積 |
US7704368B2 (en) | 2005-01-25 | 2010-04-27 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method and apparatus for electrochemical plating semiconductor wafers |
US20060243599A1 (en) * | 2005-04-28 | 2006-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electroplating additive for improved reliability |
JP2006336031A (ja) * | 2005-05-31 | 2006-12-14 | Toray Eng Co Ltd | 硫酸銅メッキ浴及びそのメッキ浴を使用したメッキ方法 |
EP1741804B1 (en) * | 2005-07-08 | 2016-04-27 | Rohm and Haas Electronic Materials, L.L.C. | Electrolytic copper plating method |
JP4816901B2 (ja) * | 2005-11-21 | 2011-11-16 | 上村工業株式会社 | 電気銅めっき浴 |
US20070178697A1 (en) * | 2006-02-02 | 2007-08-02 | Enthone Inc. | Copper electrodeposition in microelectronics |
US7153408B1 (en) * | 2006-04-13 | 2006-12-26 | Herdman Roderick D | Copper electroplating of printing cylinders |
JP5497261B2 (ja) * | 2006-12-15 | 2014-05-21 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | インジウム組成物 |
CN101796221B (zh) * | 2007-05-21 | 2012-07-04 | 上村工业株式会社 | 铜电镀浴 |
TWI341554B (en) * | 2007-08-02 | 2011-05-01 | Enthone | Copper metallization of through silicon via |
US8585885B2 (en) * | 2007-08-28 | 2013-11-19 | Rohm And Haas Electronic Materials Llc | Electrochemically deposited indium composites |
US7905994B2 (en) | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
EP2123799B1 (en) * | 2008-04-22 | 2015-04-22 | Rohm and Haas Electronic Materials LLC | Method of replenishing indium ions in indium electroplating compositions |
US8388824B2 (en) | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
US10221496B2 (en) | 2008-11-26 | 2019-03-05 | Macdermid Enthone Inc. | Copper filling of through silicon vias |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
KR20100133834A (ko) * | 2009-06-12 | 2010-12-22 | 웅진케미칼 주식회사 | 저융점사를 포함하는 원단 |
EP2459778B1 (en) | 2009-07-30 | 2015-01-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
MY160150A (en) * | 2009-07-30 | 2017-02-28 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
US8268155B1 (en) * | 2009-10-05 | 2012-09-18 | Novellus Systems, Inc. | Copper electroplating solutions with halides |
JP5471276B2 (ja) * | 2009-10-15 | 2014-04-16 | 上村工業株式会社 | 電気銅めっき浴及び電気銅めっき方法 |
US10392531B2 (en) | 2009-11-30 | 2019-08-27 | Basf Se | Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process |
EP2507332A4 (en) | 2009-11-30 | 2017-08-02 | Basf Se | Process for removing bulk material layer from substrate and chemical mechanical polishing agent suitable for this process |
EP2392694A1 (en) * | 2010-06-02 | 2011-12-07 | ATOTECH Deutschland GmbH | Method for etching of copper and copper alloys |
TWI414643B (zh) * | 2010-09-01 | 2013-11-11 | Univ Nat Chunghsing | 銅電鍍液組成物 |
RU2577281C2 (ru) | 2010-09-08 | 2016-03-10 | Басф Се | Водная полирующая композиция и способ химико-механического полирования материалов подложек для электрических, механических и оптических устройств |
RU2608890C2 (ru) | 2010-09-08 | 2017-01-26 | Басф Се | Водные полирующие композиции, содержащие n-замещенные диазений диоксиды и/или соли n -замещенных n'-гидрокси-диазений оксидов |
RU2573672C2 (ru) | 2010-09-08 | 2016-01-27 | Басф Се | Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки диэлектрика оксида кремния и поликремния |
EP2625236B1 (en) | 2010-10-07 | 2017-12-13 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
WO2012077063A1 (en) | 2010-12-10 | 2012-06-14 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
EP2465976B1 (en) * | 2010-12-15 | 2013-04-03 | Rohm and Haas Electronic Materials LLC | Method of electroplating uniform copper layer on the edge and walls of though holes of a substrate. |
WO2012085811A1 (en) * | 2010-12-21 | 2012-06-28 | Basf Se | Composition for metal electroplating comprising leveling agent |
US9496146B2 (en) | 2011-03-11 | 2016-11-15 | Basf Se | Method for forming through-base wafer vias |
JP5363523B2 (ja) * | 2011-03-28 | 2013-12-11 | 上村工業株式会社 | 電気銅めっき用添加剤及び電気銅めっき浴 |
KR20140092626A (ko) | 2013-01-16 | 2014-07-24 | 삼성전자주식회사 | 구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법 |
US9865501B2 (en) | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
CN103290438B (zh) * | 2013-06-25 | 2015-12-02 | 深圳市创智成功科技有限公司 | 用于晶圆级封装的电镀铜溶液及电镀方法 |
US9783903B2 (en) | 2013-12-06 | 2017-10-10 | Rohm And Haas Electronic Materials Llc | Additives for electroplating baths |
DE102013226297B3 (de) * | 2013-12-17 | 2015-03-26 | Umicore Galvanotechnik Gmbh | Wässriger, cyanidfreier Elektrolyt für die Abscheidung von Kupfer-Zinn- und Kupfer-Zinn-Zink-Legierungen aus einem Elektrolyten und Verfahren zur elektrolytischen Abscheidung dieser Legierungen |
US9783901B2 (en) | 2014-03-11 | 2017-10-10 | Macdermid Acumen, Inc. | Electroplating of metals on conductive oxide substrates |
US9469912B2 (en) | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
US9809891B2 (en) | 2014-06-30 | 2017-11-07 | Rohm And Haas Electronic Materials Llc | Plating method |
US9472377B2 (en) | 2014-10-17 | 2016-10-18 | Lam Research Corporation | Method and apparatus for characterizing metal oxide reduction |
CN105018977B (zh) * | 2015-07-17 | 2017-09-12 | 深圳市板明科技有限公司 | 一种填孔电镀整平剂、制备方法及应用该整平剂的电镀液 |
US10988852B2 (en) * | 2015-10-27 | 2021-04-27 | Rohm And Haas Electronic Materials Llc | Method of electroplating copper into a via on a substrate from an acid copper electroplating bath |
KR101703143B1 (ko) | 2015-11-25 | 2017-02-07 | 주식회사 서연이화 | 소음 방지용 가이드유닛이 장착된 콘솔 암레스트 장치 |
CN107278058A (zh) * | 2016-04-08 | 2017-10-20 | 东莞市斯坦得电子材料有限公司 | 一种用于印制线路板埋孔、盲孔填孔镀铜的工艺 |
KR102505102B1 (ko) | 2016-06-30 | 2023-03-03 | 솔브레인 주식회사 | 금속 도금 조성물 및 이를 이용한 금속 도금 방법 |
KR20180086073A (ko) * | 2017-01-20 | 2018-07-30 | 삼성전기주식회사 | 기판 도금용 조성물 및 이를 이용한 도금 방법 |
US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
KR102445637B1 (ko) | 2017-11-28 | 2022-09-22 | 솔브레인 주식회사 | 레벨링제 및 이를 포함하는 전기도금 조성물 |
CN108441898B (zh) * | 2018-04-18 | 2021-02-09 | 深圳海恩特科技有限公司 | 一种电镀溶液及方法 |
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US3542655A (en) * | 1968-04-29 | 1970-11-24 | M & T Chemicals Inc | Electrodeposition of copper |
US4490220A (en) * | 1982-09-30 | 1984-12-25 | Learonal, Inc. | Electrolytic copper plating solutions |
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GB9424353D0 (en) * | 1994-12-02 | 1995-01-18 | Ici Plc | Surfactants |
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JP2001049490A (ja) * | 1999-08-03 | 2001-02-20 | Ebara Corp | 基板のめっき方法及び装置 |
US6544399B1 (en) * | 1999-01-11 | 2003-04-08 | Applied Materials, Inc. | Electrodeposition chemistry for filling apertures with reflective metal |
EP1069210A1 (en) * | 1999-07-12 | 2001-01-17 | Applied Materials, Inc. | Process for electrochemical deposition of high aspect ratio structures |
JP2001181895A (ja) * | 1999-07-12 | 2001-07-03 | Applied Materials Inc | 高アスペクト比構造の電気化学堆積のためのプロセスウインドウ |
US6706418B2 (en) * | 2000-07-01 | 2004-03-16 | Shipley Company L.L.C. | Metal alloy compositions and plating methods related thereto |
US20020112964A1 (en) * | 2000-07-12 | 2002-08-22 | Applied Materials, Inc. | Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths |
US6569307B2 (en) * | 2000-10-20 | 2003-05-27 | The Boc Group, Inc. | Object plating method and system |
US20050081744A1 (en) * | 2003-10-16 | 2005-04-21 | Semitool, Inc. | Electroplating compositions and methods for electroplating |
CN1497069A (zh) * | 2002-06-03 | 2004-05-19 | 希普雷公司 | 匀平剂化合物 |
US6808611B2 (en) * | 2002-06-27 | 2004-10-26 | Applied Materials, Inc. | Methods in electroanalytical techniques to analyze organic components in plating baths |
-
2003
- 2003-11-18 EP EP03257256A patent/EP1422320A1/en not_active Withdrawn
- 2003-11-20 US US10/717,774 patent/US20040217009A1/en not_active Abandoned
- 2003-11-20 KR KR1020030082509A patent/KR101089618B1/ko active IP Right Grant
- 2003-11-20 JP JP2003390291A patent/JP2004169188A/ja active Pending
- 2003-11-20 TW TW092132523A patent/TWI255872B/zh not_active IP Right Cessation
- 2003-11-21 CN CNB2003101231753A patent/CN100526517C/zh not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI391536B (zh) * | 2007-08-10 | 2013-04-01 | 羅門哈斯電子材料有限公司 | 銅電鍍製程 |
TWI398555B (zh) * | 2007-08-10 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 銅電鍍浴配方 |
Also Published As
Publication number | Publication date |
---|---|
JP2004169188A (ja) | 2004-06-17 |
CN100526517C (zh) | 2009-08-12 |
KR20040045328A (ko) | 2004-06-01 |
EP1422320A1 (en) | 2004-05-26 |
KR101089618B1 (ko) | 2011-12-05 |
CN1506501A (zh) | 2004-06-23 |
US20040217009A1 (en) | 2004-11-04 |
TW200424362A (en) | 2004-11-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |