TWI234814B - Method of manufacturing a semiconductor device - Google Patents
Method of manufacturing a semiconductor device Download PDFInfo
- Publication number
- TWI234814B TWI234814B TW092117301A TW92117301A TWI234814B TW I234814 B TWI234814 B TW I234814B TW 092117301 A TW092117301 A TW 092117301A TW 92117301 A TW92117301 A TW 92117301A TW I234814 B TWI234814 B TW I234814B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- wiring
- film
- semiconductor device
- metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 206
- 229910052802 copper Inorganic materials 0.000 claims abstract description 193
- 239000010949 copper Substances 0.000 claims abstract description 193
- 229910052751 metal Inorganic materials 0.000 claims abstract description 143
- 239000002184 metal Substances 0.000 claims abstract description 143
- 239000003054 catalyst Substances 0.000 claims abstract description 111
- 230000004888 barrier function Effects 0.000 claims abstract description 104
- 238000007772 electroless plating Methods 0.000 claims abstract description 40
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000009713 electroplating Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 80
- 238000007747 plating Methods 0.000 claims description 42
- 229910052763 palladium Inorganic materials 0.000 claims description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000007788 liquid Substances 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 82
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 63
- 239000011229 interlayer Substances 0.000 description 40
- 239000000243 solution Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 25
- 230000004913 activation Effects 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 230000002265 prevention Effects 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 238000005498 polishing Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005238 degreasing Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000007517 polishing process Methods 0.000 description 5
- -1 tungsten phosphorus cobalt cobalt Chemical compound 0.000 description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910000365 copper sulfate Inorganic materials 0.000 description 4
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229940098465 tincture Drugs 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 description 2
- SXJKTDPBJBGIFZ-UHFFFAOYSA-N cobalt tungsten Chemical compound [Co].[Co].[W] SXJKTDPBJBGIFZ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- QDHHCQZDFGDHMP-UHFFFAOYSA-N Chloramine Chemical compound ClN QDHHCQZDFGDHMP-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910020165 SiOc Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- DEFYIFZJOLHDGE-UHFFFAOYSA-N [Cu].B(F)(F)F Chemical compound [Cu].B(F)(F)F DEFYIFZJOLHDGE-UHFFFAOYSA-N 0.000 description 1
- WIGAYVXYNSVZAV-UHFFFAOYSA-N ac1lavbc Chemical compound [W].[W] WIGAYVXYNSVZAV-UHFFFAOYSA-N 0.000 description 1
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 1
- GJYJYFHBOBUTBY-UHFFFAOYSA-N alpha-camphorene Chemical compound CC(C)=CCCC(=C)C1CCC(CCC=C(C)C)=CC1 GJYJYFHBOBUTBY-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011013 aquamarine Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- ANERHPOLUMFRDC-UHFFFAOYSA-K bismuth citrate Chemical compound [Bi+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ANERHPOLUMFRDC-UHFFFAOYSA-K 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009189 diving Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 210000004392 genitalia Anatomy 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- LFETXMWECUPHJA-UHFFFAOYSA-N methanamine;hydrate Chemical compound O.NC LFETXMWECUPHJA-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- UYDPQDSKEDUNKV-UHFFFAOYSA-N phosphanylidynetungsten Chemical compound [W]#P UYDPQDSKEDUNKV-UHFFFAOYSA-N 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical compound OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Description
1234814 玖、發明說明: 【發明所屬之技術領域】 、明係關於一種採用含銅的金屬配線之半導體裝置 γ1m尤為特別者,係具備防止銅擴散至層間絕緣 膜等機能之半導體裝置的製造方法。 【先前技術】 以往’在半導體晶圓上形成高密度集成電路之細微配線 材料,係採用銘系合金。然而,為了再提昇半導體裝置的 速度,必頊採用比電阻更低的配線材科,此類材料可例舉 如銅或銀等。尤其是銅材料,其比電阻係低至U叩cm, :助:半導體裝置的高速化,因抗電致遷移性較銘系合金 阿了 級(order) ’被看好為次世次的材料。 採:銅形成配線時,不易對銅進行乾濕蝕,故一般係運 尽斤胃的i屬鑲嵌(damascene)。該方法之内容,係在有如 乳化石夕的層間絕賴先形成既定溝槽,待將配線材料(銅) 真居溝槽後,以化學機械研磨法(Chemicai Mechanical • g以下逕稱為CMP)將多餘的配線材料去除以形成 配、泉又在形成連接孔(via hole)及配線溝(drench)之後, 一併埋入配線材料,復以cMP去除多餘配線材料,即雙層 配線鑲嵌法,同樣為吾人所周知。 此外,一般係將銅配線用於多層化用途。此時,為防止 銅至屬擴散至層間絕緣膜,乃在形成上述配線前,先形成 包含氮化矽、炭化矽等之阻障膜。 …、、而,在CMP後的銅配線表面不存有阻障膜,故在形成
85018-931209.DOC 1234814 上層配線前先形成具有銅擴散防止層機能的阻障膜。此時 ,因銅在低達150°C的低溫下仍易於在含氧的環境中發生氧 化現象,一般係以未含氧的材料,如氮化梦膜(SiN)或炭化 矽膜(SiC)等,作為阻障膜。 然而,因為氮化矽(SiN)或炭化矽(SiC)的比介電率較氧 化矽(Si〇2)為大,使得採用銅配線的半導體裝置之實際介 電率上升,造成增加半導體裝置的RC延遲(因電阻與電容 導致之配線延遲)的問題,或是弱化了阻障膜SiN、SiC與銅 的界面間之抗電致遷移性。 已知有一提案,係將對於銅擴散防止性佳、能改善RC延 遲、以及抗電致遷移性佳的CoWP材料,形成於CMP後的銅 配線表面,即USP 5695810所揭示者(USE OF COBALT TUNGSTEN PHOSPHITE AS A BARRIER MATERIAL FOR COPPER METALLIZATION)(即銅配線製程中以磷鈷化鎢 為阻障材料)。再者,CoWP亦有可藉無電電鍍在銅配線上 選擇性成膜的特點。
以圖21表示此種採用CoWP為阻障膜的先前半導體裝置 。該半導體裝置包含了含銅之金屬配線,且在該金屬配線 上,形成了包含具銅擴散防止機能的CoWP之阻障膜。若 細分此半導體裝置的結構,係在預先製作了電晶體等元件 (省略其圖示)的基板101上,將含銅之金屬配線(以下稱為 銅配線)之下層配線102a、102b,埋入設在絕緣層103a的溝 槽内。又,絕緣層10 3 a包含例如S i Ο C,在下層配線10 2 a、 102b與絕緣層103a之間,形成阻障層104a,含有例如TaN
85018-931209.DOC 1234814 。又’在基板101與絕緣層l〇3a之間,形成了包含例如Sic 的触刻終止層105,俾防止銅由下層配線l〇2a、102b擴散至 基板ιοί。又,在下層配線102a、1〇2b及絕緣層1〇3&上,經 由用來防止銅擴散的SiN膜形成了絕緣膜1 〇3b。絕緣膜 l〇3b包含例如Si〇2。 更在絕緣膜10补上,經由用來防止銅擴散的SiN膜形成 了絕緣膜103c,經由含有例如TaN的阻障金屬膜1〇4b,將 含銅的金屬配線,即上層配線丨〇6a、1 〇6b,形成於設在絕 緣層103b及絕緣層i〇3c的溝槽。又,在上層配線1〇6a、1〇6b 上,亦即上層配線l〇6a、106b未由阻障金屬膜i〇4b所被覆 的表面,亦即圖21的上面,經由鈀(Pd)置換層1〇7,形成了 包含具銅擴散防止機能的C〇WP之阻障膜1〇8。 製作上述半導體裝置時,係藉著對銅配線上施以c〇Wp 的無電電鍍以形成阻障膜。以下將簡要說明對銅配線上施 以CoWP的無電電鍍成膜方法及其原理。為藉著無電電鍍 法將CoWP的觸媒。一般採用的方法,係藉置換電鍍法, 預先在銅表面形成鈀(Pd)等觸媒金屬層。 置換電鍍法,係利用異種金屬之離子化傾向的相異性而 進行者。因銅與鈀相較係屬電化學上的卑金屬,因之,若 將銅浸入例如PdCh的HCL溶液中,隨著銅的溶解所放出的 電子,移轉成溶液中的貴金屬,即鈀離子,致在卑金屬之 銅表面上形成鈀。因為在絕非金屬的絕緣膜表面無法發生 鈀的置換,故觸媒活性層僅在銅上形成。之後續以該鈀層 為觸媒,僅於銅配線上開始無電電鍍反應,而由c〇wp來
85018-931209.DOC 1234814 形成阻障金屬層。 然而,上述方法之中,藉著鈀的置換電鍍在銅表面形成 觸媒活化層之際,易有蝕入銅配線使其受損的問題。尤其 疋,可能會沿著鋼的結晶(grain)對銅的局部鑿洞,甚至腐 蝕嚴重時尚可能造成銅配線的斷線。究其結果,銅配線的 抽傷嚴重時將造成銅配線的電阻提高30%。再者,欲將
Co WP的成膜埋入銅結晶間產生的鑿洞有其困難,究其結 果在(::0〜1>成膜後仍留有銅配線間的孔洞,以致基於此 而急速惡化抗電致遷移性。 因而,本發明係基於上述現狀而提案者,丨目的在提供 種半導體裝置的製造方法,以達成半導體裝置的高速化 及良好的品質可靠度。 【發明内容】 先前,以無電電鍍法將阻障 時,必須以鈀等觸媒性高的金 媒活化處理。具體而言,例如 金屬配線表面置換成鈀,以形 觸媒活性層的鈀為觸媒核進行 ,達成上揭目的之本發明的半㈣裝置之製造方法,其 特欲在& ’乃疋將具有域散防止機能的阻障卿成在含 :的至屬配線上者,且,使用添加觸媒金屬的電鍍來進行 私鍍’以形成含有觸媒金屬的金屬配線,並以外露於金屬 配線表面的觸媒金屬為觸媒來進行無電電鍍,俾將具有銅 擴散防止機能的阻障膜形成在金屬配線上。 膜形成於含銅的金屬配線上 屬在金屬配線層表面施以觸 ’以鈀的置換電鍍使含銅的 成觸媒活性層,之後,以該 無電電鍍。
85018-931209.DOC 1234814 凍然而,在本發明之半導體裝置的製造方法中,如以上所 过在形成含銅的金屬配線之際係預使金屬配線中本有 ”旬乂内含於金屬配線中的觸媒金屬當中之外露於金 ::、、泉表面的觸媒金屬,作為無電電鍍時的觸媒核,藉此 ”屬配泉上形成具有銅擴散防止機能的阻障膜。 右:予以詳細說明’本發明之半導體裝置的製造方法中 甩鈹形成含銅金屬配線之際,係預將觸媒金屬添加入 电’度使用的電鍍液内。該觸媒金屬係形成阻障膜之際用來 啟動無電電鎮反應的觸媒…,著使用、“:《際用未 嗍蛛又精耆使用添加有觸媒金屬 :电鍍液來進行電鍍,可形成含有觸媒金屬的金屬配線。 :即’可使形成的金屬配線中及其表面分散配置有觸媒金 、又’根據實際需要將多餘部分去除且施以平坦化處理, =行無電電鍍財施藉外露於金屬轉的表面之觸媒金 屬為觸媒形成阻障膜作業,之後,以該觸媒金屬為觸媒的 此處,觸媒金屬外露於金屬配 存有觸媒金屬的地方進行。因而 地進行阻障膜的成膜。 應開始進行,更藉由自我觸媒作用而持續無電 电麵反應的進行,而在金屬配線上形成阻障膜。 線的表面,無電電鍍僅在 ’可在金屬配線上選擇性 以上所揭方法中,係使用預先添加觸媒金屬的電鍍液來 :::Γ形成金屬配線’在無電電鍍中職司觸媒機能之 觸媒金屬’乃分散配置在金屬線中及其表面。藉此,1有 先可的製造方法中施以觸媒活化處理時的同等效果。
85018-931209.DOC -10- 1234814 因而’本發明之中’省格了先前的製造方法中所必須的 觸媒活化處理步驟,故能以簡化的製程來提昇形成阻障膜 的效率,能以較低成本,製造出可確實防止銅原子擴散至 層間絕緣膜的高品質半導體裝置。 、又,、本發明之半導體裝置的製造方法中,如以上所述, 並未進仃觸媒活化步驟,因而,不會使金屬配線本身遭致 腐蝕。亦即,不會因腐蝕而造成金屬配線中具有鑿孔,更 不會因腐蝕而造成斷線等損傷。因之,可免於因金屬配線 的腐蚀導致配線電阻的上昇或是抗電致遷移性的惡化等, ii免了忒些造成半導體裝置的動作不良之問題點,故可製 造出高品質的半導體裝置。 再者,因本發明之半導體裝置的製造方法無須觸媒活化 $步驟,因而避免了先前方法中觸媒金屬及附殘留在層間絕 #膜上的現象’究其結果’因為不會在層間絕緣膜上开j成 阻障膜,故可提昇阻障膜成膜時的成膜選擇性,故能製造 出高品質的半導體裝置。 【實施方式】 以下邊參照附圖,詳細說明適用於本發明之半導體裝置 的製造方法。又,本發明不侷限於以下所述,凡在未變更 本發明要旨之範圍内,可作適度的變更。首先,係以本發 月運用在單層配線者為說明例。再者,以下的圖面乃用於 辅助說明,不免與實際比例相達。 圖1係運用本發明所製作出的半導體裝置之要部截面圖 。该半導體裝置中具有含銅的金屬配線,在該金屬配線上
85018-931209.DOC -11 - 1234814 /成了 /、銅擴政防止機能的阻障膜。若進一步說明該半導 體裝置的結構,係在縣製作有電Μ等元相、略其圖示) 的基板1上,將含銅的金屬配線(以下稱為銅配線)2,埋入 設在層間絕緣膜3的溝槽内。 層間絕緣膜3,係含有例如Si〇c、义〇2、SiLK、几綱 (水万香烴醚膜)、添加氟素的氧化矽(FSG)、或是其他低介 電率絕緣膜而構成者。在銅配線2與層間絕緣膜3之間,形 成具有銅擴散防止機能的阻障金屬膜4,以及在埋入銅線 步驟時經電鍍使銅成膜之際作為導電層用途之銅種晶 (seed)層5。阻障金屬膜4,例如,係含TaN、Ta、丁丨、丁以 、W、WXN、或是此等之積層膜者。 又,在基板1與層間絕緣膜3之間,形成蝕刻終止層6, 含有例如SiN、SiC等。 又此半導體裝置中,在銅配線2上,亦即銅配線2不由 阻障金屬膜4所被覆的表面,亦即圖丨之上面,形成了具銅 擴散防止機能的阻障膜7。此處之阻障膜7,係形成於銅配 、’泉上之包含磷姑化鎢(c〇wp)膜者。以包含磷鈷化鎢 (C〇WP)膜者作為阻障膜7使得該半導體裝置中包含磷姑化 鎢(CoWP)膜所構成之阻障膜7,可充分發揮銅的擴散防止 膜之機能,可確實防止銅擴散至層間絕緣膜。 又,以包含磷姑化鎢(CoWP)膜者作為阻障膜7,能夠使 得該半導體裝置中的阻障膜7,不像採用SiN為銅擴散防止 膜般地往往弱化了銅擴散防止膜與銅的界面間的抗電致遷 移性,或因銅擴散防止膜本身因高介電率原因導致RC延遲 85018-931209.DOC -12- 1234814 的拉長。亦即,以包.含磷姑化鎢(cowp)膜者為阻障膜7, 具有良好的銅擴散防止性,具有良好的抗電致遷移性,又 ’可抑制半導體裝置之RC延遲。 該種半導體裝置可藉下述方法製得。首先,如圖2所示 般,以CVD(Chemical Vapor Deposition,即化學氣相沉積) 法,將SiC、SiN等材料被覆於基板丨上,使蝕刻終止層6成 膜。具體而言,係以例如甲矽烷(SiH4)為原料氣體,使用 ΝΑ及A的混合氣體,藉CVD法成SiN成膜達5〇mn。 接著,如圖3所示,在蝕刻終止層6上的全面,使用四乙 氧基矽烷(TEOS)與〇2的混合氣體為原料氣體,繼上述蝕刻 終止層6的成膜後續以CVD法形成含^〇2的層間絕緣膜3。 該層間絕緣膜3的成膜,可接於上述製程之蝕刻終止層6的 成膜之後續於同一反應室(Chamber)内進行。又,層間絕緣 膜3之形成並不侷限用si〇2,凡SiOC等周知的氧化物,或 是低介電率材料等有機材料亦佳。 繼而,如圖4所示,以微影及乾蝕刻製程,在層間絕緣 膜3形成配線用溝槽8之圖案化。例如,可藉下述姓刻條件 來蝕刻層間絕緣膜3。 <層間絕緣膜3的蝕刻條件> 使用氣體·· CHF3/CF4/Ar=30/60/800 seem 壓力 :200 Pa
基板溫度:25°C 接著,如圖 5所示’以 PVD(Physical Vapor Deposition, 即物理氣相沈積)法來形成含有例如TaN的阻障金屬膜4,以 85018-931209.DOC -13- 1234814 P万止銅朝層間絕緣膜3擴散。阻障金屬膜4 r:尚可使用^、鹽1、-,或是該等: 和層膜等銅保有優良阻障性的材料。 進而’如圖6所示,以PVD法在阻障金屬膜4上形戊銅種 晶層5。銅種晶層5之功用,係在其後的埋入銅線步驟中經 電鍍形成銅膜之際作為導電層。阻障金屬膜4及銅種晶層$ 的成膜並不侷限於PVD法,以CVD法形成者亦佳。曰 又,對其各別膜厚之設定,除遵循設計規則外,希使阻 障金屬膜4在5〇nm以下,使銅種晶層在2〇〇11111以下為佳。 因而,舉例而言可使含TaN的阻障金屬膜4之成膜2〇 厚 ,使位於該阻障金屬膜4之上的銅種晶層5之成為15〇11〇1厚 。以下所示係此時阻障金屬膜4之PVD成膜條件的一例。 <阻障金屬膜4之PVD成膜條件>
Dc功率 :1 Kw 製程氣體 :Ai-50 sccm
AC晶圓偏壓功率:350 W 又,以下所示係銅種晶層5之PVD成膜條件的一例,。 接著,如圖7所示,藉由電鍍銅使銅9成膜,將銅9埋入 溝槽8内。此時,係先將作為觸媒金屬1〇a的鈀加入電鍍銅 時使用的電鍍液中。該觸媒金屬l〇a之功用,係在下述的形 成阻障膜7之際,作為啟動無電電鍍反應的觸媒。又,藉著 使用預加入鈀等觸媒金屬1 〇a的電鍍液來電鍍銅俾將成膜 的銅9埋入溝槽8内,可形成含有觸媒金屬1〇a的銅配線2。 具體而言,形成銅配線2時,能使得觸媒金屬隨機地分 85018-931209.DOC -14- 1234814 散配置在銅線2中及其表面。 先前的半導體裝置之製造方法中,欲在銅配線2上形成 阻障膜7時,必須使用高觸媒性的金屬,例如鈀等,在銅線 2的表面施以觸媒活化處理。具體而言,例如,藉著鈀的置 換電鍍將銅配線2的表面置換成鈀,以在銅配線2的表面形 成觸媒活性層,之後,以該觸媒活化層的鈀作為觸媒來進 行無電電鍍。 然而在本發之半導體裝置的製方法中,則是同上述般地 預將觸媒金屬l〇a添加入銅的電鍍液中,藉著使用該電鍍液 來進行銅的電鍍,可形成含有觸媒金屬1〇a的銅配線2。亦 即,使得作為啟動無電電鍍的反應觸媒之觸媒金屬1〇a,分 散配置在銅配線2中及其表面。 藉此,與先前的製造方法中施以觸媒活化處理時的效果 相等,但可省略先前製造方法所入須的觸媒活化處理步驟 。因之,本明之半導體裝置的製造方法中,因簡化了製程 而提昇形成阻障膜7的效率,故能以較低成本,製造出能確 實防止銅原子朝層間絕緣膜的高品質半導體裝置。 又,因本發明之半導體裝置的製造方法不須進行觸媒活 化步驟,在形成阻障膜7之際能免於銅配線2受到腐蝕。又 ,因本發明之半導體裝置的製造方法不須進行觸媒活化步 驟,能使得銅配線2免於因腐蝕而產生鑿孔,甚至因腐蝕而 遭致斷線等損傷。因而,不會因腐蝕而提高銅配線2的配線 私阻或劣化柷電致遷移性等。因之,不因銅配線2的腐|虫 而發生半導體裝置的動作不良,可製造出高品質的半導體
85018-931209.DOC 15 1234814 裝置。 再者’时發明之半導體裝置的製造方法不彡貞進行觸媒 活化步驟,其觸媒金屬不會像先前方法般地吸附、殘留於 層間絕緣膜3,《其結|,因p且障膜7不形成於層間絕^ 3 ,故在後述之阻障膜7成膜時的膜選擇性獲得提昇。其原因 所在,係因無電電鍍僅在存有觸媒金屬丨〇a之處進行,而本 發明之半導體裝置的製造方法中的觸媒金屬1〇a僅選擇性 地配置在銅配線2上。 此外,因電鍍時一般係採用硫酸銅系的電鍍液,例如以 在巴為觸媒金屬時’希將硫酸免添加入銅的電鍍液中以作為 上述觸媒金屬的添加方法。然而,若是僅將硫酸鈀加入銅 的電鍍液中’將使銅的電鍍液中因加水分解而產生的水氧 化物,造成該水氧化物浮游於銅的電鍍液中,除引起電鍵 液的變色,亦成為電鍍液的不穩定因素。 此處,在本發明中,希將錯體化的觸媒金屬添加入銅的 電鍍液中。亦即,例如以鈀為觸媒金屬時,係藉檸檬酸等 將飽錯體化後才添加入銅的電鍍液中。如所揭示者,藉著 將錯體化的飽加入銅的電鍍液中,可避免銅的電鍍液中因 加水分解而產生鈀的水氧化物,不會造成該水氧化物浮游 於銅的電鍍中之現象。因之,不因為鈀的水氧化物造成電 鍵液的變色’或是電鐘的不穩定,故可於穩定條件下進行 高品質的鍍銅作業。 又,除了鈀以外,尚可以金(Au)、白金(Pt)、銀(Ag)、铑 (Rh)、鈷(Co)、鎳(Ni)、等作為添入銅的電鍍液之觸媒金屬 85018-931209.DOC -16- 1234814 。即使以。亥等材料作為添入銅白々電鐘液之觸媒I屬,仍以 使用#檬鉍塩、酒石酸塩、琥珀酸塩等適當錯化劑予以錯 體化使成金屬塩後才添入銅的電解液者為佳。 又,因形成阻障膜7的材料不同,用來啟動後述無電電 鍍所必須的觸媒金屬量,亦即存於銅配線2表面的單位面積 之觸媒金屬分散密度,亦有差異。因⑸,添入銅的電鍍: 之觸媒金屬10a的添加量並無限定,只須根據形成阻障膜? 的材質來適當設定。 以下所示一例,係上述添入錯體化的鈀之銅的電鍍液組 成及電鍍銅的條件。 <銅的電鍍液組成〉 硫酸銅 :200 g/Ι〜250 g/1 ,闰又茨ο 檸檬酸胺 硫酸 氯離子 光澤劑等添r Αα逾ll 10 mg/1 〜1 g/1 20 mg/1〜4 g/1(檸檬酸鈉等亦可) 10 g/Ι〜50 g/1 20 mg/1 〜80 mg/1 適量 <電鍍銅的條件>
電鍍電流值 :2.83A 境鍍時間 ·· 4分30秒(1 μηι)
電鍍液溫度 :25°C〜30°C 陰極電流密度:1 mA/cm2〜5 mA/cm2 又’上述雖以硫酸銅浴來電鍍銅,然而,除硫酸銅浴外 尚可藉硼氟化銅浴、焦磷酸銅浴、氰化銅浴等來電鍍銅。
85018-931209.DOC -17- 1234814 而後’如圖8所示,去除多餘的銅9、阻障金屬膜4及銅 種曰曰層5,使銅9僅存於溝槽8内而形成銅配線2。藉此,使 内含於鋼配線2的鈀外露於銅配線2的表面。亦即,使下一 步驟中藉無電電鍍形成阻障膜7時職司觸媒機能之觸媒金 屬10a,外露於銅配線2的表面。 此處,藉一般泛用的CMp技術以研磨去多餘的銅9等。 此製私肩研磨層間絕緣膜3的表面及至配線材料僅存在於 溝才曰8内希以層間絕緣膜3上不殘留任何該等配線來控制 幵磨進行在CMP研磨製程中,必須要以研磨去除銅9,阻 障金屬膜4及銅種晶層5之複數種材料,是故,必須要隨研 磨材料來控制研磨液(slurry,研漿),研磨條件等。因之, 有時須進行複數步驟之研磨。以下係—例去除多餘銅之 CMP條件。 <銅之CMP條件> 1〇〇 g/ cm2 旋轉數 旋轉塾 研磨液 流量 溫度 30 rpm 不織布與獨立發泡體之積層體 添加H2〇2 (含氧化鋁之研磨液)
100 cc/min 25 〜30〇C 接著係在銅配線2上形成阻障膜7,然而,尚須應實際需 要施以前處理,以去除CMP研磨製程後形成於銅配線2上的 自然氧化膜,之後,藉無電電鍍法,如圖8所示般地在銅配 線2上形成阻障膜7。藉由採用無電電鍍法,能夠僅在銅配 85018-931209.DOC • 18 - 1234814 線2上選擇性地形成阻障膜7,故能省略蝕刻阻障膜7的製程 。以下所示為前處理之一具體例。 <前處理> (1) 脫脂處理:藉鹼性脫脂或酸性脫脂提昇表面之潤濕性。 (2) 氧化處理:以2%〜3%的塩酸等進行中和的同時, 去除表面之氧化銅。 (3) 純水沖洗 上述前處理步驟中,(1)脫脂處理及(2)氧化處理之處理方 法,可例舉如使用自旋式塗敷機的旋式處理、漿式 處理(沾取處理液體)、甚至是浸入式(diving)處理等。 接著,以無電電鍍方法,在銅配線2的表面形成例如 C〇WP膜作為阻障膜7。c〇wp膜之成膜,係如圖9所示般, 以外露於銅配線2表面之觸媒金屬i〇a,亦即鈀,作為觸媒 以啟動CoWP之無電電鍍反應。又,因自我觸媒作用而持 續無電電鍍反應,藉此如圖1〇所示在銅配線2上形成c〇wp 膜。 如以上所述,此處之觸媒金屬1〇a,亦即鈀,外露於銅配 線2的表面,無電電鍍僅在存有鈀之處進行。因之,可以僅 在銅配線2上選擇性地形成阻障膜7。 又’本發明中的阻障膜7不侷限為CoWP膜,可採用姑合 金或鎳合金,將之以無電電鍍法來形成。可例舉如c〇p、
CoB、CoW、CoMo、CoWB、CoMoP、CoMoB等鈷合金。 另’可例舉如Ni WP、Ni WB、NiMoP、NiMoB等鎳合金。 再者’亦可採鈷與鎳雙方的合金、鎢與鉬雙方的合金組合
85018-931209.DOC -19- 1234814 等。將鎢或鉬添加入鈷或鎳内可增加銅擴散防止效果。又 ,在無電電鍍時隨後混入的磷或硼,亦可使成膜的姑或鎳 具有微細結晶構造,有利銅擴散防止效果。 以下所示一例,係用於上述無電電鍍之無電電鍍液組成 及條件。 (Cop之應用例) <無電電鐘液的組成〉 氯化鈷:10〜100 g/Ι(硫酸鉛等) 甘胺酸(qlycine) : 2〜50 g/Ι(檸檬酸、酒石酸、琥珀酸、 蘋果酸、丙二酸、蟻酸等胺迄、或該等之混合物) 次亞燐酸胺:2〜200 g"(福嗎啉、二羥醋酸、聯胺、氫 化硼胺、二甲基胺硼烷(DMAB)等水氧化胺((四)甲基氫氧 化胺(TMAH)等pH調整劑)) <無電電鍍的條件> 電鍍液溫度 :50〜95°C 電鍍的pH : 7〜12 上述無電電鍍液的組成中,以福嗎啉、二輕醋酸、聯胺 等來代替次亞瞵酸胺時,將使阻障膜不含磷(P)。又,若使 用氫化硼胺或二甲基胺硼烷(DMAB),可從含磷(P)膜成為 含硼(B)膜。此點在下述的無電電鍍液之組成中亦同。 (CoWP、CoMoP、NiWP、NiMoP之應用例) 〈無電電鐘液的組成〉 氯化鈷或氯化鎳:10〜100 g/l(硫酸鈷、硫酸鎳等) 甘胺酸:2〜50 g/l(擰檬酸、酒石酸、琥珀酸、蘋果酸、 85018-931209.DOC -20- 1234814 丙二酸、蟻酸等胺塩、或該等之混合物) 次亞燐酸胺:2〜· g/1(福嗎,林、二幾醋酸、聯胺、氣 化蝴胺、:甲基胺魏_ΑΒ)等水氧化胺((四)甲基氯氧 化胺(TMAH)等調整劑pH)) <無電電鍍的條件> 電鍍液溫度·· 50〜95°C 電鍵的p Η .· 8〜12 對於上述無電電鍍, 旋式塗敷機的旋式處理 等方法來成膜。 亦可同於前處理料,藉著使用自 、或是漿式處理、甚至是浸入處理 採上揭作法,可製作出如^所示’具有鋼擴散防止機 能、亦具艮好的抗電致遷移性。且能降低Rc延敎高品所 的半導體裝置。 貝 。又,内含於鋼配線2的觸媒金屬1Ga之中,以存在於銅線 配線2表面之觸媒金屬1〇3為觸媒核,亦即,作為啟動無電 電鐘反應之觸媒’俾藉由無電電鍍將具有鋼擴散防止機能 的阻障膜7形成於銅配線2上。 & 如以上所揭示者,本發明之半導體裝置的製造方法中, 形成銅配線2之際,係先使金屬配線中含有觸媒金屬心。 具體而言’以電鐘厘入銅配線2之際’係預將觸媒金屬他 添加入電鍵液中’並使用該電鐘液來進行電鍍以埋入銅線] —在該方法中,作為啟動無電電鍍反應的觸媒金屬1〇&,係 藉銅配線2的形成,分散配置在銅配線2中及其表面,因 ’藉銅配線2的形成,達成相等於先前製造方法中施以觸^ 85018-931209.DOC -21 - 1234814 處里《絲,故可省略先前製造方法所不可或缺的觸 媒活^處理步驟。藉此,本發明之半導體裝置的製造方法 中’件以簡化的製程來提昇阻障膜7的形成效率,故能以較 低成本’製造出能確實防止銅原子朝層絕緣膜擴散之高品 質半導體裝置。 又’本發明之半導體裝置的製造方法中,如以上所述般 f須觸媒活㈣程,社,在形成阻障膜7之際不會使銅配 泉又到腐|虫。因㊉,可免於因銅配線2的腐触而提高配線 电阻或疋惡化柷電致遷移性等,避免半導體裝置的動作不 良,故可製造出高品質的半導體裝置。 ,再者因本發明之半導體裝置的製造方法無須觸媒活化 製私,故不像先前方法般地造成觸媒金屬吸附、殘留在層 間、、、邑緣膜3上,咒其結果,不會在層間絕緣膜上形成阻障膜 7可}疋昇阻障膜7成膜時的成膜選擇性,故可製造出高品 質的半導體裝置。 再者,上述半導體裝置之製造方法,對於金屬鑲嵌法、 乂層配線金屬鑲彼法等任一種溝槽配線技術均可適用。 接著’乃將本發明應用在具多層配線之半導體裝置,以 說明所謂雙層配線金屬鑲嵌法的具體製造方法。 首先’如同上述單層配線時所示,形成圖丨丨之第1配線, 即下層配線。繼而,根據以下步驟形成第2配線,即上配線 。再者,以下所述内容中,對於同於上述說明之元件,係 賦與同於上述之符號,以省略詳細說明。 上層配線之形成,首先,係施以氫氟酸(HF)溶液處理, 85018-931209.DOC -22- 1234814 以去除層間絕緣膜3上的殘留之銅原子。 繼而,如圖12所示,以CVD法,依序形成含Sioc且深度 同於接觸孔(via hole)的層間絕緣膜,以及用來防止銅擴散 的SiN膜11。 接著,如圖1 3所示,藉著微影及隨後的乾蝕刻對siN膜 11加工,俾在下層配線2的正上方且相應於接觸孔的位置形 成開口部12的圖案。 又,如圖14所示,以CVD法,在包含開口部12的SiN膜 11上,堆積SiOC達上層配線的深度,以形成層間絕緣膜13。 接著,將光阻塗布於層間絕緣膜1 3上,藉微影技術形成 光阻罩幕後(圖示省略)’以該光阻障幕進行蚀刻而對層絕 緣膜1 3加工。再繼續蝕刻作業,如圖15所示般地加工層間 絕緣膜1 Ob。該蝕刻作業停止於阻障膜7上。 接著,再藉微影技術以光阻(圖示省略)對配線形成狀以 外的邵分圖案。又,採用該光阻罩幕進行姓刻。去除光阻 之後,遂如圖16所示,在層間絕緣膜l〇b内形成了連通阻障 膜7,以層間絕緣膜l〇b為側壁之接觸孔15 ;又,在層間絕 緣膜13内形成以層間絕緣膜13&siN膜11為側壁之上層配 線溝14。以下將配線溝丨4及接觸孔15統稱為凹部16。 繼而,如圖17所示,藉由PVD法形成包含例如TaN的阻 障金屬膜17,以防止銅擴散至層間絕緣膜i〇b及層間絕緣膜 1 3 ’緊接著續以PVD法形成銅種晶層1 8。阻障金屬膜17之 材料,除TaN外,尚可使用Ta、TiN、WN等對具有良好阻 障的材料。銅種晶層18之用功,係在其後的埋入銅線步驟 85018-931209.DOC -23- 1234814 中、、’二笔鍍產生銅膜之際作為導電層者。阻障金屬膜1 7及銅 種晶層18的成膜並不侷限於PVD法,亦可藉CVD法成膜。 對於各自膜厚的要求,除遵守設計規則外,希使阻障金屬 膜17在50 nm以下,使銅種晶層在2〇〇 nin以下。 接著,如圖18所示,藉電鍍銅將銅19埋入凹部16。此時 係Π表上述,預將作為觸媒金屬2〇的免,加戊電鍵銅時 所用的電鍍液中。該觸媒金屬2〇的功用,係在形成後述阻 P早膜22之際,作為啟動無電電鍍反應的觸媒。又,銅19的 膜厚異於凹部16的深度,希以差距2 μηι下為基準。 接著,如圖1 9所示,去除多餘的銅丨9、阻障金屬膜丨了及 銅種晶層18,使得銅19僅存於凹部16,而形成上層配線之 銅配線21。藉此,使内含於銅配線21中的鈀外露於銅配線 21的表面。亦即,使得在次一製程經無電電鍍形成阻障膜 22<際職司觸媒機能的觸媒金屬2〇,外露於銅配線以的表 面。 去除多餘的銅19時可用廣被運用的CMp來進行研磨。此 製私須研磨層間絕緣膜丨3的表面及至配線材料僅存在於凹 邵16内,希以層間絕緣膜13上不殘留任何該等配線來控制 研磨進行。在CMP研磨製程中,必須要以研磨去除銅丨9、 阻障金屬膜17及銅種晶層18之複數種材料,是故,必須要 隨研磨材料來控制研磨液(slurry,研漿),研磨條件等。因 之,有時須進行複數步驟之研磨。 接著係在銅配線21上形成阻障膜22,然而,尚須應實際 。需要施以前處理,以CMP研磨製程後形成於銅配線21上 85018-931209.DOC -24- 1234814 的自…:氧化膜’之後,藉無電電鍍法,在銅配線21上形成 阻Ρ早膜22。藉由採用無電電鍛法,能夠僅在銅配線上選 擇性地形成阻障膜22,故能省略餘刻阻障膜22的製程。以 下所TF為如處理之》具體例。 <前處理> ⑴脫脂處理:藉驗性脫脂或酸性脫脂,提昇表面之潤 濕性。 (2) 氧化處理:以2%〜3%的塩酸等進行中和的同時, 去除表面之氧化銅。 (3) 純水沖洗 上述前處理步驟中,⑴脫脂處理及⑺氧化處理之處理方 法,可例舉如使用自旋式塗敷機的旋式處理、漿式處理 (沾取液體)、甚至是浸入式處理等。 接耆,以無電電鍍方法,在銅配線21的表面形成例如 C0醫膜作為阻障膜22。c。WP膜之成膜,係以外露於銅配 線21表面之觸媒金屬20 ’亦即免,作為觸媒以啟動c哪 之無電電鍵反應。又,因自我觸媒作用而持續無電電鍵反 應,藉此如圖20所示,在銅配線21上形成作為p且障膜^之 CoWP 膜。 如以上所述,此處之觸媒金屬20,亦即免,外露於銅配 線21的表面,無電電鍍僅在存有鈀之處進行。因之,可以 僅在銅配線21上選擇性地形成阻障膜22。 之後’可藉著重覆同樣的步驟’製作出可確實防止銅擴 散之高可靠度的多層銅配線。 、 85018-931209.DOC -25- 1234814
上述所說日月I 一 、 “本發明應用在單層配線及多層配線的 ^ ·: 本I明並未侷限於上述内容,在未脫本發明 要旨的範圍内,尚可作適宜變更。 配、泉〈夕層化作法,不侷限^上述藉雙層鑲嵌來形 成配線,亦可採各類作法。 t發明之铸體裝置的製造方法,乃是將具有銅擴散防 止機能的阻障膜形成在含銅的金屬配線上者,1,以預加 觸媒至屬的電趣液來進行電鍵,以形成含有觸媒金屬的上 述金屬配線’並以外祕上述金屬配線表面的上述觸媒金 屬為觸媒來進行無電電鍵,俾將具有上述鋼擴散防止機能 的阻障膜,形成在上述金屬配線上。 如以上所揭示者’本發明之半導體裝置的製造方法中, 係使用預添入觸媒金屬的電鍍液來進行電鐘以形成金屬配 線’具有先前的製造方法中施以觸媒活化處理時的同等效 果。因之,本發明肩、略了先前的製造方法中所必須的觸媒 活化處理步驟m化的製程來提昇形成阻障膜的效 率’能讀低成本製造出可確實防止銅原子擴散至層間絕 緣膜的高品質半導體裝置。 又,本發明之半導时置㈣造方法中,並未進行觸媒 活化步驟’因而,不會使金屬配線本身遭致腐蝕,故可免 於因金屬配、㈣腐料致配線m昇或是抗電致遷移 性的惡化等,避免了該些造成半導體裝置的動作不良之問 題點,故可製造出高品質的半導體裝置。 再者,因本發明之半導體裝置的製造方法無須觸媒活化 85018-931209.DOC -26- 1234814 ^驟,因而避免了先前方法中觸媒金屬及附殘留在層間絕 , 莫上的現象,故可提昇阻障膜成膜時的成膜選擇性,故 能製造出高品質的半導體裝置。 · 丄因又,若根據本發明,可提供一種適用於半導體裝置的 鬲速化,且品皙佔 _ ^ 为佳可罪度高的半導體裝置。 【圖式簡單說明】 圖1係以本發明製得之一種半導體裝置的構成例,係Α 縱截面圖。 ' 圖2用來說明本發明之半導體裝置的製造方法之縱截自鲁 圖。 圖圖3用來說明本發明之半導體裝置的製造方法之縱截面 圖4用來說明本發明之半導體裝置的製造方法之縱截面 圖。 ㈤來說月本發明之半導體裝置的製造方法之縱截面 圖。 圖圖6用來說明本發明之半導體裝置的製造方法之縱截面# 圖圖7用來說明本發明之半導體裝置的製造方法之縱截面 圖8用來說明本發明之半導體裝置的製造方法之縱截面 罔 圖9用來說明太菰 本1明<半導體裝置的製造方法之縱截面
85018-931209.DOC -27- 1234814 圖ι〇用來說明本發明之半導體裝置的製造方法之縱截面 圖。 圖11係以本發明形成下層配線時,表示其形成狀態之縱 截面圖。 圖12係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ,半導體裝置之製造方法。 圖13係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ,半導體裝置之製造方法。 圖14係一縱截面圖,用來說明以本發明用於雙層镶嵌時 ,半導體裝置之製造方法。 圖15係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ’半導體裝置之製造方法。 圖16係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ’半導體裝置之製造方法。 圖17係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ’半導體裝置之製造方法。 圖18係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ’半導體裝置之製造方法。 圖19係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ’半導體裝置之製造方法。 圖20係一縱截面圖,用來說明以本發明用於雙層鑲嵌時 ,半導體裝置之製造方法。 圖21係一種先前的半導體装置之構成例的縱截面圖。 【圖式代表符號說明】
85018-931209.DOC -28 - 1234814 101 基板 102a、 102b 下層配線 103a、 103b 、 103c 絕緣層 104a 阻障金屬膜 105 蚀刻終止層 106a、 106b 上層配線 107 1巴置換層 108 阻障膜 1 基板 2 含銅金屬配線 3 層間絕緣膜 4 阻障金屬膜 5 銅種晶層 6 蝕刻終止層 7 阻障膜 8 溝槽 9 銅 10a 觸媒金屬 10b 層間絕緣膜 11 SiN膜 12 開口部 13 層間絕緣膜 14 上層配線溝 15 接觸孔
85018-931209.DOC -29- 1234814 16 凹部 17 阻障金屬膜 18 銅種晶層 19 銅 20 觸媒金屬 21 銅配線 22 阻障膜
85018-931209.DOC -30-
Claims (1)
1234814 拾、申請專利範園: —種半導體裝置的製造方法,其特徵在於: ^含銅的金屬配線上形成具備銅擴散防止機_ ρ早艇,且係以添加觸媒金屬的電鍍液來進行電鍍,以 形成含有觸媒金屬的上述金屬配線;並以外露^上述 金屬配線表面的上述觸媒金屬作為觸媒進行無電電 鍍,藉此在上述金屬配線上形成具備上述鋼擴散:: 機能之阻障膜。 2. 4. 如申請專利範圍第1項之半導體裝置的製造方法,其中 係將上述觸媒金屬錯體化後加入上述電鍍液。 如申請專利範圍第1項之半導體裝置的製造方法,其中 的觸媒金屬含Au、Pt、Pd、Ag、Ni、Co中的任一種。 如申請專利範圍第1項之半導體裝置的製造方法,其中 的阻障膜含鈷合金或鎳合金的任一種。 85018-931209.DOC
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002184873A JP2004031586A (ja) | 2002-06-25 | 2002-06-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200411750A TW200411750A (en) | 2004-07-01 |
TWI234814B true TWI234814B (en) | 2005-06-21 |
Family
ID=29996717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092117301A TWI234814B (en) | 2002-06-25 | 2003-06-25 | Method of manufacturing a semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050014359A1 (zh) |
JP (1) | JP2004031586A (zh) |
KR (1) | KR20050009273A (zh) |
CN (1) | CN1565047A (zh) |
TW (1) | TWI234814B (zh) |
WO (1) | WO2004001823A1 (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7094684B2 (en) * | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
AU2003264515A1 (en) * | 2002-09-20 | 2004-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
WO2004099467A1 (de) * | 2003-05-09 | 2004-11-18 | Basf Aktiengesellschaft | Zusammensetzungen zur stromlosen abscheidung ternärer materialien für die halbleiterindustrie |
JP2005235978A (ja) * | 2004-02-19 | 2005-09-02 | Sony Corp | 半導体装置および半導体装置の製造方法 |
US7279407B2 (en) | 2004-09-02 | 2007-10-09 | Micron Technology, Inc. | Selective nickel plating of aluminum, copper, and tungsten structures |
JP4535845B2 (ja) * | 2004-10-29 | 2010-09-01 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP2006270009A (ja) * | 2005-02-25 | 2006-10-05 | Seiko Epson Corp | 電子装置の製造方法 |
US7317253B2 (en) | 2005-04-25 | 2008-01-08 | Sony Corporation | Cobalt tungsten phosphate used to fill voids arising in a copper metallization process |
JP2007027177A (ja) * | 2005-07-12 | 2007-02-01 | Sony Corp | 半導体装置の製造方法 |
TWI269450B (en) * | 2005-12-20 | 2006-12-21 | Taiwan Tft Lcd Ass | A direct patterned method for manufacturing a metal layer of a semiconductor device |
US8396848B2 (en) * | 2006-06-26 | 2013-03-12 | Microsoft Corporation | Customizable parameter user interface |
US8053867B2 (en) * | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
US20100155949A1 (en) * | 2008-12-24 | 2010-06-24 | Texas Instruments Incorporated | Low cost process flow for fabrication of metal capping layer over copper interconnects |
US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
US8324089B2 (en) * | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
US8895441B2 (en) * | 2012-02-24 | 2014-11-25 | Lam Research Corporation | Methods and materials for anchoring gapfill metals |
US9252049B2 (en) * | 2013-03-06 | 2016-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming interconnect structure that avoids via recess |
US9502365B2 (en) * | 2013-12-31 | 2016-11-22 | Texas Instruments Incorporated | Opening in a multilayer polymeric dielectric layer without delamination |
US9353444B2 (en) * | 2014-03-25 | 2016-05-31 | Lam Research Corporation | Two-step deposition with improved selectivity |
JP6181006B2 (ja) * | 2014-07-09 | 2017-08-16 | 東京エレクトロン株式会社 | めっき前処理方法、めっき処理システムおよび記憶媒体 |
CN106663615B (zh) * | 2014-08-28 | 2019-08-27 | 三菱电机株式会社 | 半导体装置的制造方法、半导体装置 |
CN104465500A (zh) * | 2014-11-26 | 2015-03-25 | 上海华力微电子有限公司 | 一种改善铜互连的方法 |
CN107245731B (zh) * | 2017-08-02 | 2018-05-25 | 翟安民 | 径线剖面为双喇叭开口的高开孔率印花圆网的制造方法 |
US10553481B2 (en) | 2017-08-31 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Vias for cobalt-based interconnects and methods of fabrication thereof |
FR3079242B1 (fr) | 2018-03-20 | 2020-04-10 | Aveni | Procede d'electrodeposition de cobalt |
JP6807420B2 (ja) * | 2019-02-21 | 2021-01-06 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP2023042176A (ja) * | 2021-09-14 | 2023-03-27 | 株式会社東芝 | エッチング方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MY125599A (en) * | 1996-12-19 | 2006-08-30 | Ibiden Co Ltd | Printed circuit boards and method of producing the same |
JP3208410B2 (ja) * | 1997-04-07 | 2001-09-10 | 奥野製薬工業株式会社 | 非導電性プラスチック成形品への電気めっき方法 |
US6261671B1 (en) * | 1997-04-15 | 2001-07-17 | Ibiden Co., Ltd. | Adhesive for electroless plating, feedstock composition for preparing adhesive for electroless plating, and printed wiring board |
WO2000070925A1 (fr) * | 1998-01-28 | 2000-11-23 | Ibiden Co., Ltd. | Carte a circuit imprime multicouche et procede de fabrication correspondant |
JP4055319B2 (ja) * | 2000-02-18 | 2008-03-05 | ソニー株式会社 | 半導体装置の製造方法 |
JP2002093747A (ja) * | 2000-09-19 | 2002-03-29 | Sony Corp | 導体構造の形成方法及び導体構造、並びに半導体装置の製造方法及び半導体装置 |
JP4083968B2 (ja) * | 2000-11-02 | 2008-04-30 | 株式会社東芝 | 半導体装置の製造方法 |
US7413983B2 (en) * | 2003-06-13 | 2008-08-19 | Ebara Corporation | Plating method including pretreatment of a surface of a base metal |
-
2002
- 2002-06-25 JP JP2002184873A patent/JP2004031586A/ja active Pending
-
2003
- 2003-06-20 KR KR10-2004-7002091A patent/KR20050009273A/ko not_active Application Discontinuation
- 2003-06-20 US US10/486,446 patent/US20050014359A1/en not_active Abandoned
- 2003-06-20 WO PCT/JP2003/007871 patent/WO2004001823A1/ja active Application Filing
- 2003-06-20 CN CNA038011697A patent/CN1565047A/zh active Pending
- 2003-06-25 TW TW092117301A patent/TWI234814B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2004031586A (ja) | 2004-01-29 |
CN1565047A (zh) | 2005-01-12 |
KR20050009273A (ko) | 2005-01-24 |
TW200411750A (en) | 2004-07-01 |
WO2004001823A1 (ja) | 2003-12-31 |
US20050014359A1 (en) | 2005-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI234814B (en) | Method of manufacturing a semiconductor device | |
TWI290736B (en) | Semiconductor device and method for production thereof | |
US7470617B2 (en) | Treating a liner layer to reduce surface oxides | |
JP4055319B2 (ja) | 半導体装置の製造方法 | |
US6962873B1 (en) | Nitridation of electrolessly deposited cobalt | |
JP2004031586A5 (ja) | 半導体装置の製造方法及び半導体装置 | |
US6977224B2 (en) | Method of electroless introduction of interconnect structures | |
TWI339422B (en) | Selective capping of copper wiring | |
US7694413B2 (en) | Method of making a bottomless via | |
JP5503147B2 (ja) | 無電解フェーズと電流供給フェーズとを含むウェット化学堆積によりパターニングされた絶縁体上の金属層 | |
US7799681B2 (en) | Method for forming a ruthenium metal cap layer | |
JP2006128680A (ja) | 集積回路内での金属層の選択的形成 | |
JP2004335998A (ja) | 半導体素子の金属配線形成方法 | |
US9382627B2 (en) | Methods and materials for anchoring gapfill metals | |
JP3636186B2 (ja) | 半導体装置の製造方法 | |
TW201227826A (en) | Method for manufacturing semiconductor device | |
US6875260B2 (en) | Copper activator solution and method for semiconductor seed layer enhancement | |
JP2002053971A (ja) | めっき方法及びめっき構造、並びに半導体装置の製造方法及び半導体装置 | |
KR100667905B1 (ko) | 반도체 소자의 구리 금속배선 형성방법 | |
KR101076927B1 (ko) | 반도체 소자의 구리 배선 구조 및 그 형성방법 | |
JP2003243499A (ja) | 半導体装置及びその製造方法 | |
JP2003179058A (ja) | 半導体装置の製造方法 | |
JP2007027177A (ja) | 半導体装置の製造方法 | |
JP2003243392A (ja) | 半導体装置及びその製造方法 | |
JP2003243393A (ja) | 半導体装置及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |