TWI232496B - Integrated circuits with air gaps and method of making same - Google Patents

Integrated circuits with air gaps and method of making same Download PDF

Info

Publication number: TWI232496B
Authority: TW; Taiwan
Prior art keywords: layer; metal wire; wire pattern; patent application; dielectric layer
Prior art date: 2002-11-15

Application number

TW092131566A

Other languages

English (en)

Chinese (zh)

Other versions

TW200415704A (en

Inventor

Water Lur

David Lee

Kuang-Chih Wang

Ming-Sheng Yang

Original Assignee

United Microelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-11-15

Filing date

2003-11-11

Publication date

2005-05-11

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=32719000&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI232496(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

2002-11-15 Priority claimed from US10/295,080 external-priority patent/US7138329B2/en

2002-11-15 Priority claimed from US10/295,719 external-priority patent/US7449407B2/en

2002-11-15 Priority claimed from US10/295,062 external-priority patent/US6917109B2/en

2003-11-11 Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp

2004-08-16 Publication of TW200415704A publication Critical patent/TW200415704A/zh

2005-05-11 Application granted granted Critical

2005-05-11 Publication of TWI232496B publication Critical patent/TWI232496B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 28
229910052751 metal Inorganic materials 0.000 claims abstract description 143
239000002184 metal Substances 0.000 claims abstract description 143
238000000034 method Methods 0.000 claims abstract description 60
230000008569 process Effects 0.000 claims abstract description 29
238000005229 chemical vapour deposition Methods 0.000 claims abstract description 17
239000000758 substrate Substances 0.000 claims abstract description 17
238000005530 etching Methods 0.000 claims description 27
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 25
239000010931 gold Substances 0.000 claims description 24
229910052737 gold Inorganic materials 0.000 claims description 24
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
229910052802 copper Inorganic materials 0.000 claims description 4
239000010949 copper Substances 0.000 claims description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
230000004048 modification Effects 0.000 claims description 2
238000012986 modification Methods 0.000 claims description 2
229910052710 silicon Inorganic materials 0.000 claims description 2
239000010703 silicon Substances 0.000 claims description 2
QUCZBHXJAUTYHE-UHFFFAOYSA-N gold Chemical group [Au].[Au] QUCZBHXJAUTYHE-UHFFFAOYSA-N 0.000 claims 1
238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
239000010410 layer Substances 0.000 description 154
229920002120 photoresistant polymer Polymers 0.000 description 13
238000010586 diagram Methods 0.000 description 10
230000005611 electricity Effects 0.000 description 10
239000004065 semiconductor Substances 0.000 description 10
238000005516 engineering process Methods 0.000 description 6
239000000463 material Substances 0.000 description 4
MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
230000015572 biosynthetic process Effects 0.000 description 3
239000007789 gas Substances 0.000 description 3
238000001459 lithography Methods 0.000 description 3
230000003071 parasitic effect Effects 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
239000000126 substance Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
238000009825 accumulation Methods 0.000 description 2
238000000151 deposition Methods 0.000 description 2
230000008021 deposition Effects 0.000 description 2
230000003628 erosive effect Effects 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
239000010936 titanium Substances 0.000 description 2
241000251468 Actinopterygii Species 0.000 description 1
241001327708 Coriaria sarmentosa Species 0.000 description 1
229910000881 Cu alloy Inorganic materials 0.000 description 1
229910004298 SiO 2 Inorganic materials 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
CCAZWUJBLXKBAY-ULZPOIKGSA-N Tutin Chemical compound C([C@]12[C@@H]3O[C@@H]3[C@@]3(O)[C@H]4C(=O)O[C@@H]([C@H]([C@]32C)O)[C@H]4C(=C)C)O1 CCAZWUJBLXKBAY-ULZPOIKGSA-N 0.000 description 1
UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
230000000052 comparative effect Effects 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000003111 delayed effect Effects 0.000 description 1
238000013461 design Methods 0.000 description 1
238000011161 development Methods 0.000 description 1
230000035622 drinking Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000011810 insulating material Substances 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
230000007775 late Effects 0.000 description 1
238000013507 mapping Methods 0.000 description 1
239000007769 metal material Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000005498 polishing Methods 0.000 description 1
239000011148 porous material Substances 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
239000005368 silicate glass Substances 0.000 description 1
150000004760 silicates Chemical class 0.000 description 1
239000002904 solvent Substances 0.000 description 1
241000894007 species Species 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
239000004575 stone Substances 0.000 description 1
239000000725 suspension Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Manufacturing & Machinery (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

TW092131566A 2002-11-15 2003-11-11 Integrated circuits with air gaps and method of making same TWI232496B (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US10/295,080 US7138329B2 (en)	2002-11-15	2002-11-15	Air gap for tungsten/aluminum plug applications
US10/295,719 US7449407B2 (en)	2002-11-15	2002-11-15	Air gap for dual damascene applications
US10/295,062 US6917109B2 (en)	2002-11-15	2002-11-15	Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit device

Publications (2)

Publication Number	Publication Date
TW200415704A TW200415704A (en)	2004-08-16
TWI232496B true TWI232496B (en)	2005-05-11

Family

ID=32719000

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092131566A TWI232496B (en)	2002-11-15	2003-11-11	Integrated circuits with air gaps and method of making same

Country Status (3)

Country	Link
JP (1)	JP2004172620A (ja)
CN (1)	CN100372113C (ja)
TW (1)	TWI232496B (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6838354B2 (en) *	2002-12-20	2005-01-04	Freescale Semiconductor, Inc.	Method for forming a passivation layer for air gap formation
DE102005039323B4 (de) *	2005-08-19	2009-09-03	Infineon Technologies Ag	Leitbahnanordnung sowie zugehöriges Herstellungsverfahren
US20080265377A1 (en) *	2007-04-30	2008-10-30	International Business Machines Corporation	Air gap with selective pinchoff using an anti-nucleation layer
US7879683B2 (en) *	2007-10-09	2011-02-01	Applied Materials, Inc.	Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
US8436473B2 (en) *	2009-05-06	2013-05-07	Taiwan Semiconductor Manufacturing Company, Ltd.	Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof
US8587121B2 (en) *	2010-03-24	2013-11-19	International Business Machines Corporation	Backside dummy plugs for 3D integration
CN102891100B (zh) *	2011-07-22	2015-04-29	中芯国际集成电路制造(上海)有限公司	浅槽隔离结构及其形成方法
CN102376684B (zh) *	2011-11-25	2016-04-06	上海集成电路研发中心有限公司	铜互连结构及其制作方法
JP5696679B2 (ja) *	2012-03-23	2015-04-08	富士通株式会社	半導体装置
CN104425230A (zh) *	2013-09-09	2015-03-18	中芯国际集成电路制造(上海)有限公司	侧墙结构及其形成方法
CN104362172B (zh) *	2014-10-15	2018-09-11	杰华特微电子（杭州）有限公司	具有终端环的半导体芯片结构及其制造方法
US9653348B1 (en) *	2015-12-30	2017-05-16	Taiwan Semiconductor Manufacturing Co., Ltd.	Semiconductor device and manufacturing method thereof
US10896888B2 (en) *	2018-03-15	2021-01-19	Microchip Technology Incorporated	Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond
US10818541B2 (en)	2018-12-27	2020-10-27	Nanya Technology Corporation	Semiconductor structure
US11309263B2 (en) *	2020-05-11	2022-04-19	Nanya Technology Corporation	Semiconductor device structure with air gap structure and method for preparing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0393635B1 (en) *	1989-04-21	1997-09-03	Nec Corporation	Semiconductor device having multi-level wirings
GB2247986A (en) *	1990-09-12	1992-03-18	Marconi Gec Ltd	Reducing interconnection capacitance in integrated circuits
JP2555940B2 (ja) *	1993-07-27	1996-11-20	日本電気株式会社	半導体装置及びその製造方法
JPH07326670A (ja) *	1994-05-31	1995-12-12	Texas Instr Inc <Ti>	半導体集積回路装置
JPH08148556A (ja) *	1994-11-16	1996-06-07	Sony Corp	半導体装置およびその製造方法
CN1204867A (zh) *	1997-06-20	1999-01-13	日本电气株式会社	半导体器件及其制造方法
US6184121B1 (en) *	1997-07-10	2001-02-06	International Business Machines Corporation	Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
JP2000058549A (ja) *	1998-08-04	2000-02-25	Nec Corp	集積回路配線の形成方法
JP2000269327A (ja) *	1999-03-15	2000-09-29	Toshiba Corp	半導体装置およびその製造方法
US6413852B1 (en) *	2000-08-31	2002-07-02	International Business Machines Corporation	Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

2003
- 2003-11-07 CN CNB2003101034859A patent/CN100372113C/zh not_active Expired - Lifetime
- 2003-11-11 TW TW092131566A patent/TWI232496B/zh not_active IP Right Cessation
- 2003-11-14 JP JP2003385281A patent/JP2004172620A/ja active Pending

Also Published As

Publication number	Publication date
CN100372113C (zh)	2008-02-27
TW200415704A (en)	2004-08-16
JP2004172620A (ja)	2004-06-17
CN1501492A (zh)	2004-06-02

Legal Events

Date	Code	Title	Description
2023-12-21	MK4A	Expiration of patent term of an invention patent

Publication	Publication Date	Title
TWI232496B (en)	2005-05-11	Integrated circuits with air gaps and method of making same
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